CN117589428B - Pumping characteristic evaluation device and method of semiconductor laser - Google Patents
Pumping characteristic evaluation device and method of semiconductor laser Download PDFInfo
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- CN117589428B CN117589428B CN202410078086.3A CN202410078086A CN117589428B CN 117589428 B CN117589428 B CN 117589428B CN 202410078086 A CN202410078086 A CN 202410078086A CN 117589428 B CN117589428 B CN 117589428B
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Abstract
The invention discloses a pumping characteristic evaluation device and method of a semiconductor laser, and relates to the technical field of lasers, wherein the device comprises an LD power distribution measurement assembly, an electric control assembly and an effective pumping factor calculation assembly; the electric control assembly is used for providing a driving power supply for the semiconductor laser assembly to be tested; the LD power distribution measurement component is used for: adjusting the working environment temperature of the semiconductor laser assembly to be tested based on the temperature adjusting instruction; acquiring output power and spectral characteristics of the semiconductor laser component to be tested under different currents and different temperatures based on the data acquisition instruction; the effective pumping factor calculating component is used for calculating effective pumping power, effective pumping factor and residual pumping power according to the output power and spectral characteristics of the semiconductor laser component to be tested under different currents and different temperatures so as to represent the pumping characteristics of the semiconductor laser component to be tested. The invention quantitatively characterizes the pumping characteristic of the semiconductor laser, and improves the calculation accuracy of the real conversion efficiency of the optical fiber.
Description
Technical Field
The present invention relates to the field of laser technologies, and in particular, to a device and a method for evaluating pumping characteristics of a semiconductor laser.
Background
A high-brightness semiconductor Laser (LD) gradually becomes one of ideal pumping sources of an optical fiber Laser due to the characteristics of compactness, high efficiency, low cost, long service life and the like, and also becomes a basic core component of the optical fiber Laser at present, and the preparation technology and the reliability standard of the high-brightness semiconductor Laser determine the upper performance limit of the optical fiber Laser to a great extent. Compared with the optical fiber laser containing a space structure part, the all-fiber laser has the advantages of better compactness, stability, high efficiency, wavelength tuning, low noise, easy integration and the like, and gradually becomes the mainstream choice of the current high-power laser system. Under the scheme, the semiconductor laser couples pump laser to the matched (multimode) optical fiber, and then enters an ytterbium-doped gain fiber (Ytterbium-doped fiber, YDF) through an optical fiber combiner and the like for gain amplification.
When the LD is operated, the electro-optical conversion efficiency is generally maintained between 40% and 55%, and the rest of the electric energy is converted into heat energy. Continuous operation can lead to LD temperature rise, requiring cooling measures to maintain the proper temperature. However, even if cooling measures are taken, the temperature difference of the LD internal temperature at different power levels (corresponding to different currents) may still reach tens of degrees celsius or more. Such a temperature change may cause an emission wavelength drift of the LD chip, accompanied by a change in output power. The spectral variation of the pump LD can lead to non-uniformity in the actual effective conversion efficiency at low and high currents without changing the fiber laser structure and YDF. The temperature difference in the YDF fiber core at low and high power also causes a change in the conversion efficiency, and in practice the two act together to cause a change in efficiency. Therefore, in the research of YDF materials, if the influence of LD pumping wavelength and fiber core temperature on efficiency is not decoupled, the actual efficiency difference caused by the fiber core material is difficult to accurately research, and misjudgment occurs to the material research.
In order to solve the problem of significant wavelength shift of LD under different temperature conditions, some LD gradually adopts reflective body bragg gratings (Volume Bragg Grating, VBG) to perform wavelength locking so as to improve the spectral characteristics of LD. The main principle relates to that the front end of the laser chip is provided with a reflective VBG and forms a resonant cavity together with the back cavity surface of the chip. Since the output wavelength of WS-LD (wavelength-stabilized semiconductor laser) is determined by VBG, WS-LD can be designed and applied at other wavelengths, such as 981nm, 940nm, 969nm, etc. After VBG locking is applied, the LD emission wavelength is stabilized near the 976nm peak value of the ytterbium absorption section, which not only maintains the consistent absorption intensity under different currents, but also decouples the influence of other factors on the laser pumping conversion efficiency. However, although WS-LD has excellent spectral characteristics, a certain internal temperature is generally required to enter a stable locking state, and it is difficult to achieve locking at full current. The locking threshold currents of WS-LDs of different manufacturers, designs and models differ significantly in spectral characteristics before and after locking. Therefore, it is necessary to comprehensively consider the spectral and power characteristics of NWS-LD (non-wavelenght-stabilized Laser Diode, unstable wavelength semiconductor lasers) and WS-LD when designing a fiber laser system, and take them as input parameters of a design model, especially in the case of thousands of watts of high power.
In current fiber laser research, the input process for NWS-LD and WS-LD is relatively simple, and only the influence of power on the performance of the fiber laser is generally considered, and the required pump source power is calculated reversely according to the expected conversion efficiency and output power, i.e. the effective pump factor is always considered as a constant smaller than 1 in the whole process, and is irrelevant to the current and the LD emission laser spectral characteristics. In practice, however, the effective pumping factor is greatly affected by the spectral characteristics, and the numerical differences are significant at different currents, so that in order to more accurately consider the performance of the pumping source, the spectral characteristics of the LD should be introduced and the actual effective pumping factor associated with the current calculated. However, currently there is no general way to take the above factors into account when evaluating pump source performance, whether for NWS-LD or WS-LD.
Disclosure of Invention
The invention aims to provide a device and a method for evaluating the pumping characteristic of a semiconductor laser, which quantitatively characterize the pumping characteristic of the semiconductor laser so as to improve the calculation accuracy of the real conversion efficiency of an optical fiber.
In order to achieve the above object, the present invention provides the following solutions:
In a first aspect, the present invention provides a pumping characteristic evaluation device of a semiconductor laser, including an LD power distribution measurement component, an electric control component, and an effective pumping factor calculation component;
The electronic control assembly is respectively connected with the LD power distribution measuring assembly and the effective pumping factor calculating assembly, and is used for: providing a driving power supply for the semiconductor laser component to be tested, and enabling the semiconductor laser component to be tested to emit laser to the LD power distribution measuring component according to a preset current driving instruction; sending a temperature regulation instruction and a data acquisition instruction to the LD power distribution measurement component; the semiconductor laser component to be tested comprises at least one semiconductor laser;
The LD power distribution measurement component is configured to: adjusting the working environment temperature of the semiconductor laser assembly to be tested based on the temperature adjusting instruction; based on the data acquisition instruction, acquiring the output power and the spectral characteristics of the semiconductor laser assembly to be detected under different currents and different temperatures;
the effective pumping factor calculating component is connected with the LD power distribution measuring component and is used for calculating effective pumping power, effective pumping factor and residual pumping power according to the output power and spectral characteristics of the semiconductor laser component to be tested under different currents and different temperatures; the effective pump power, the effective pump factor and the residual pump power are used for representing the pump characteristic of the semiconductor laser component to be tested.
In a second aspect, the present invention provides a method for evaluating pump characteristics of a semiconductor laser, which is applied to a device for evaluating pump characteristics of a semiconductor laser, the method comprising:
Providing a driving power supply for the semiconductor laser component to be tested by using the electric control component, and enabling the semiconductor laser component to be tested to emit laser to the LD power distribution measuring component according to a preset current driving instruction; the semiconductor laser component to be tested comprises at least one semiconductor laser;
An electronic control assembly is used for sending a temperature adjustment instruction and a data acquisition instruction to the LD power distribution measurement assembly, so that the LD power distribution measurement assembly adjusts the working environment temperature of the semiconductor laser assembly to be tested based on the temperature adjustment instruction, and acquires the output power and the spectral characteristics of the semiconductor laser assembly to be tested under different currents and different temperatures based on the data acquisition instruction;
An effective pumping factor calculating component is adopted to calculate effective pumping power, effective pumping factors and residual pumping power according to the output power and spectral characteristics of the semiconductor laser component to be measured under different currents and different temperatures; the effective pump power, the effective pump factor and the residual pump power are used for representing the pump characteristic of the semiconductor laser component to be tested.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
The invention discloses a pumping characteristic evaluation device and method of a semiconductor laser, which are used for adjusting the driving current of laser emitted by a semiconductor laser component to be tested and the temperature of the working environment of the laser component to be tested so as to acquire the output power and the spectral characteristics of the semiconductor laser component to be tested under different currents and different temperatures, and further calculate the effective pumping power, the effective pumping factor and the residual pumping power, thereby realizing the quantitative characterization of the pumping characteristics of the semiconductor laser component to be tested, and further improving the accurate characterization value in the aspect of calculating the real conversion efficiency of an optical fiber so as to improve the calculation accuracy of the semiconductor laser component to be tested.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a pump characteristic evaluation apparatus of a semiconductor laser according to the present invention;
FIG. 2 is a schematic diagram of a method for evaluating pumping characteristics of a semiconductor laser according to the present invention;
FIG. 3 is a graph of pump source current versus effective pump factor for the present invention;
FIG. 4 is a graph of pump source current versus residual pump power for the present invention.
Symbol description:
The device comprises a 1-electric control component, a 2-LD power distribution measuring component, a 3-effective pumping factor calculating component, a 4-semiconductor laser component to be tested, a 5-multimode beam splitter, a 6-power meter, a 7-attenuation sheet, an 8-spectrometer jumper, a 9-spectrometer and a 10-water tank.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a pumping characteristic evaluation device and method of a semiconductor laser, which establishes an effective pumping factor calculation model, measures the power distribution of an LD along with the wavelength by using a power meter and a spectrometer, and calculates the effective pumping power, the residual pumping power and the effective pumping factor of the LD under different currents by the effective pumping factor calculation model aiming at a given optical fiber laser system. The invention relates to the emission spectrum characteristics of the LD, calculates the effective pumping factor of the LD, acquires the real conversion efficiency of the optical fiber, quantitatively evaluates the ultimate heat load pressure of the LD when the LD is used for the optical fiber laser, is particularly important in high-power optical fiber laser application, and has the advantages of convenience, high efficiency and operability.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
As shown in fig. 1, the invention provides a pumping characteristic evaluation device of a semiconductor laser, which comprises an LD power distribution measuring component 2, an electric control component 1 and an effective pumping factor calculating component 3.
The electronic control assembly 1 is respectively connected with the LD power distribution measuring assembly 2 and the effective pumping factor calculating assembly 3, and the electronic control assembly 1 is used for: providing a driving power supply for the semiconductor laser component 4 to be tested, and enabling the semiconductor laser component 4 to be tested to emit laser to the LD power distribution measuring component 2 according to a preset current driving instruction; sending a temperature regulation instruction and a data acquisition instruction to the LD power distribution measurement component 2; the semiconductor laser assembly 4 to be tested comprises at least one semiconductor laser, in particular a single semiconductor laser or an array of semiconductor lasers.
The preset current driving command is generally a certain current loading sequence, for example: turning on the current to a specific current, inIn the time interval, the LD output power is ensured to reach a stable value, and after data are collected, the LD output power passes throughAnd then increasing the current to another specific value.
The LD power distribution measurement component is configured to: based on the temperature adjustment instruction, adjusting the working environment temperature of the semiconductor laser assembly 4 to be tested; based on the data acquisition instruction, the output power and the spectral characteristics of the semiconductor laser component 4 to be detected under different currents and different temperatures are acquired.
Specifically, the LD power distribution measurement assembly comprises a light splitting component, a power meter 6, a spectrometer 9, an optical power adjusting component, a spectrometer jumper 8 and a water tank 10; the beam splitting component is welded with the semiconductor laser assembly 4 to be detected, and is used for splitting laser emitted by the semiconductor laser assembly 4 to be detected to obtain first laser and second laser, wherein the beam splitting proportion of the first laser is 99.9%, and the beam splitting proportion of the second laser is 0.1%. The beam splitting component is a multimode beam splitter 5 or a beam splitter. The power meter 6 is configured to receive the first laser and measure based on the data acquisition instruction, so as to obtain the output power of the semiconductor laser component 4 to be tested.
The spectrometer 9 is configured to receive the second laser light sequentially passing through the optical power adjusting component and the spectrometer jumper 8, and perform measurement based on the data acquisition instruction, so as to obtain the spectral characteristic of the semiconductor laser assembly 4 to be tested; the optical power adjusting component is used for reducing the optical power of the second laser and preventing the spectrometer 9 from being damaged by the input optical signal; the optical power adjusting component is an attenuation sheet 7.
The water tank 10 is connected with the electric control assembly 1, and the water tank 10 is used for: controlling the temperature of the cooling liquid based on the temperature adjustment instruction; the cooling liquid is supplied to the semiconductor laser module 4 to be tested to adjust the operating environment temperature of the semiconductor laser module 4 to be tested. Specifically, the water tank supplies the semiconductor laser assembly 4 to be tested with the cooling liquid, and takes away the waste heat generated during the operation of the LD in time, thereby changing the operating environment temperature thereof.
In another specific example, the LD power distribution measuring component includes a power meter 6 and a water tank 10; the power meter 6 is connected with the semiconductor laser component 4 to be tested, and the power meter 6 is used for: receiving laser emitted by the semiconductor laser component 4 to be tested; and measuring based on the data acquisition instruction to obtain the output power of the semiconductor laser component 4 to be measured, and detecting a spectrum by using diffuse reflection light to obtain the spectral characteristics of the semiconductor laser component 4 to be measured. The working principle and the process of the water tank are as described above with respect to the water tank 10.
The effective pumping factor calculating component 3 is connected with the LD power distribution measuring component 2, and the effective pumping factor calculating component 3 is used for calculating effective pumping power, effective pumping factor and residual pumping power according to the output power and spectral characteristics of the semiconductor laser component 4 to be measured under different currents and different temperatures; the effective pump power, the effective pump factor and the residual pump power are used for representing the pump characteristic of the semiconductor laser component 4 to be tested.
Example two
As shown in fig. 2, in order to implement the technical solution in the first embodiment to achieve the corresponding functions and technical effects, the present embodiment further provides a method for evaluating the pumping characteristics of a semiconductor laser, which is applied to the device for evaluating the pumping characteristics of the semiconductor laser in the first embodiment, and the method includes:
Step 100, an electric control assembly is used for providing a driving power supply for a semiconductor laser assembly to be tested, and the semiconductor laser assembly to be tested is enabled to emit laser to an LD power distribution measuring assembly according to a preset current driving instruction; the semiconductor laser component to be tested comprises at least one semiconductor laser.
Step 100 specifically includes:
(1) And connecting the semiconductor laser component to be tested with the electric control component, welding the output tail fiber of the semiconductor laser component to be tested with the tail fiber of the multimode beam splitter, and starting the water tank to provide heat control for the semiconductor laser component to be tested.
(2) The electric control component provides a driving power supply for the semiconductor laser component to be tested, and starts current to a specific currentIn the followingAnd in the time interval, ensuring that the output power of the semiconductor laser component to be tested reaches a stable value. When arrivingThe electric control component immediately controls the power meter and the spectrometer to collect data and then passesThe current is increased after the time interval. /(I)、Can be set by an electric control component. The wavelength range measured by the spectrometer is adjustable and is determined by the LD wavelength and the applied gain fiber absorption band.
(3) Electronic control assemblyTime interval increasing current to currentThe current interval is. And (3) reaching a new current gear, and repeating the step (2) until the current is loaded to the rated current. Wherein=+，Can be set by an electronic control system.
(4) The electric control assembly changes the temperature of the water tank and repeats the steps (1) - (3).
And 200, sending a temperature adjustment instruction and a data acquisition instruction to the LD power distribution measurement assembly by using an electric control assembly, so that the LD power distribution measurement assembly adjusts the working environment temperature of the semiconductor laser assembly to be tested based on the temperature adjustment instruction, and acquires the output power and the spectral characteristics of the semiconductor laser assembly to be tested under different currents and different temperatures based on the data acquisition instruction.
Step 300, calculating effective pumping power, effective pumping factor and residual pumping power by adopting an effective pumping factor calculating component according to the output power and spectral characteristics of the semiconductor laser component to be tested under different currents and different temperatures; the effective pump power, the effective pump factor and the residual pump power are used for representing the pump characteristic of the semiconductor laser component to be tested.
And the information storage module is used for storing the acquired output power and spectral characteristics of the semiconductor laser component to be tested under different currents and different temperatures in the effective pumping factor calculation component. After determining the type and length of the gain fiber used by the fiber laser system, calculating according to a preset effective pumping factor calculation model to obtain effective pumping powerResidual pump PowerEffective pumping factorAnd obtain the whole current interval and the maximum residual pumping power。
When the semiconductor laser component to be tested is a single semiconductor laser, the semiconductor laser component to be tested is used for specific conditions (current I; specific cooling liquid temperature T, namely working environment temperature) and is at wavelengthA very narrow wavelength rangeIn, the absorption power of the gain fiber to the LD isThe following relation is provided:
。
In the method, in the process of the invention, For wavelength/>, under specific conditionsNormalized spectral intensity of the position satisfies，For LD output power under specific conditions,For gain fiber at wavelengthThe power residual coefficient at which the distribution is generally considered independent of I and T under certain conditions, and is only related to wavelengthAnd (5) correlation. Under specific conditions, the total absorbed power (i.e. effective pump power) of the gain fiber is:
。
linear absorption coefficient of optical fiber according to absorption characteristics of material in optical fiber The following relationship exists with the residual coefficient:
。
Absorption cross section/>, with optical fiber Has the following relationship:
。
based on the three formulas above, the effective pump power can be expressed as follows:
=
。
the calculation formula of the effective pumping factor is as follows:
。
The calculation formula of the residual pump power is as follows:
。
Wherein, Representing the effective pumping power, I representing the current, T representing the operating ambient temperature,Representing the wavelength of laser light emitted by a semiconductor laser,The output power of the semiconductor laser under the conditions of the current I and the working environment temperature T; /(I)Representing the effective length of the gain fiber,Representing the density of doped ions of the gain fiber,Representing the pump filling factor in the gain fiber,Wavelength/>, under the conditions of current I and working environment temperature TNormalizing the spectral intensity; indicating the wavelength/>, of the gain fiber doped ions Absorption cross section size at/(Representing the effective pumping factor under the conditions of current I and working environment temperature T,Representing the residual pumping power under the conditions of current I and working environment temperature T; /(I)、、、Are known amounts.
It should be emphasized that in the above calculation process, parameters (manufacturer, model, wavelength, power, whether wave locking is performed, etc.) of the LD are not determined, and types of gain fibers (rare earth element doped type, common double-clad fiber, polarization maintaining fiber, etc.) are not determined, so the above calculation formula is applicable to any LD and any gain fiber, and has a wide application scenario. Further, the power information of the LD is passed throughMeasurement introduces whether the wave is locked or not and the spectral characteristics before and after the locking are normalized by the spectral intensityIntroduced, specific rare earth element types (ytterbium, erbium, thorium, thulium, etc.) are distributed through the absorption sectionIntroduced, the optical fiber geometric characteristic is realized by the effective length L of the gain optical fiber, the doping ion number density n of the gain optical fiber and the pumping filling factor/>, in the gain optical fiberIntroduction. For the traditional fiber core uniformly doped double-cladding gain fiber, the pumping filling factor/> in the gain fiberThe calculation formula is as follows:
。
Wherein, AndThe core and cladding radii, respectively. The gain fiber can be selected from single-clad fiber, polarization maintaining fiber, D-type fiber, photonic crystal fiber, etc.
And (II) when the semiconductor laser component to be tested is a semiconductor laser array, processing and data acquisition in step 100 and step 200 are performed on each semiconductor laser in the semiconductor laser array. The corresponding calculation process in step 300 includes:
The calculation formula of the effective pumping power is as follows:
。
the calculation formula of the effective pumping factor is as follows:
=。
The calculation formula of the residual pump power is as follows:
。
Wherein, Representing the effective pump power,Representing the effective pumping power of the ith semiconductor laser in the semiconductor laser array; /(I)Representing the effective pumping factor at current I and operating ambient temperature T,Representing the residual pumping power under the conditions of current I and working environment temperature T; /(I)Representing the residual pump power of the ith semiconductor laser in the semiconductor laser array and N representing the number of semiconductor lasers in the semiconductor laser array.
In a specific embodiment, the method further comprises:
(1) Based on the effective pumping factors under different current conditions, a saturation region current interval of the effective pumping factors is marked as a mode locking current interval, a current interval before the mode locking current interval is marked as a non-mode locking current interval, and a descending current interval of the effective pumping factors is marked as a non-locking current interval.
(2) And determining screening standards of the semiconductor laser components based on the mode locking current interval, the non-mode locking current interval and the out-of-lock current interval so as to screen semiconductor lasers of different manufacturers, different types and different models.
As follows, a typical commercial 20/400 μm ytterbium doped gain fiber (YDF) and a set of WS-LDs with an emission center wavelength of 976 nm are described as an example. After the design of the fiber laser is finished, the YDF parameters L, n of the gain fiber,AndIt is known that, given a coolant temperature t=20℃,Read by a power meter,The results of the normalization process, which is performed by reading the spectrum by a spectrometer, and calculating the effective pumping factors and the residual pumping power at different currents based on the above formulas are shown in fig. 3 and fig. 4, respectively.
As can be seen from fig. 3, the duty cycle of the effective pumping factor increases gradually with the current at low current levels, and after a certain current is reached, the effective pumping factor approaches the saturation level and remains high. When the current continues to increase, the effective pumping factor is reduced due to the occurrence of secondary waves due to severe heat accumulation inside the LD. Therefore, for WS-LD, the saturation region current interval of the effective pumping factor can be defined as the mode-locked current interval, the mode-locked current interval is preceded by the non-mode-locked current interval, and the falling interval of the effective pumping factor is the out-of-lock current interval. For an LD that is excellent in performance and meets the user's needs, its mode-locked current interval should be as large as possible while the non-mode-locked current interval should be as small as possible, while the saturation value of the effective pumping factor should be as large as possible. Thus, the above information can be used to guide the screening of LD for different manufacturers, kinds and models.
As can be seen from fig. 4, there is a maximum point of the residual pump power in the non-mode-locked section, and after entering the mode-locked section, the residual pump power increases substantially linearly with the current, and increases faster as the current further increases. The maximum point of the residual pumping power can be used as the basis for laser design and component type selection.
In another specific example, the method further comprises:
(1) Determining a maximum residual pumping power according to the residual pumping power of the semiconductor laser array under different current conditions by adopting the effective pumping factor calculation component 。
For the laser system with the given residual pump light bearing threshold value P t, the cooling liquid temperature range T is scanned to obtain a group of laser systems meeting the requirementAnd the maximum and minimum values of the temperature interval of the < P t are T max and T min respectively, and the temperature T control interval of the cooling liquid with a proper system pumping source is T min<T<Tmax.
When restricted by conditions so as to alwaysWhen the system design is adjusted to increase/>, according to the safe operation requirementAnd the system pump bearing threshold value is raised. However, for the type LD shown in FIG. 4, the maximum residual pump power of the single LD is P 1 (250W), the residual pump power at maximum current is P 2 (100W), and there is P 1>P2, for a total of N LDs, there is. WhenIn this case, the system can safely operate at maximum current, but in the intermediate process state, a threshold tolerance is exceeded. If N LDs are uniformly set to the same current according to the thought, the laser damage condition can occur in the intermediate process state. However, the "peak shifting" between groups can be achieved to the respective P 1 by grouping LD and setting the delay between the loading currents of each group. Then the condition that the total residual pump power is lower than the thermal load threshold can be realized under certain configuration conditions, and the requirement of safe operation of the laser is met.
(2) Grouping the semiconductor laser arrays to obtain a plurality of semiconductor laser sub-arrays; considering grouping N LDs, dividing them into a total of p groups of q LDs per group, n=pq is satisfied.
(3) Considering the state when the last group enters the maximum residual pump power (the group corresponds to P 1) when the previous (P-1) group all enters the maximum current (corresponds to P 2), which is the maximum value of the load pressure of the whole system, the following formula should be satisfied at this time:
。
。
。
based on the above formula, it is possible to obtain: the following calculation formula is adopted
And determining a value interval of the grouping number so that each semiconductor laser subarray achieves the maximum residual pumping power in a batch-to-batch peak staggering mode. That is, when p satisfies the above equation and p and q are positive integers, a group of p values satisfying the grouping to reach the maximum current can be obtained, and the safe operation of the laser can be realized, and the instantaneous value of the load does not exceed the threshold value at any timeThe requirement of safe operation can be realized.
Where p denotes the number of packets, q denotes the number of semiconductor lasers in each semiconductor laser sub-array, and both are positive integers.Representing the maximum residual pump power,Representing the residual pump power at maximum current,Representing the pump power threshold.
In summary, the invention introduces the absorption section of YDF optical fiber under different wavelengths, simultaneously introduces the spectral evolution characteristics of NWS-LD and WS-LD of different manufacturers, designs and models before and after locking as input parameters into a system, defines effective pumping factors by a unified method, accurately calculates the real conversion efficiency of the optical fiber laser based on the effective pumping factors, and provides more accurate and reliable data feedback for researching the optical fiber material characteristics. In addition, the effective pumping factor can also be used for calculating the actual CPS heat load pressure of the laser under different currents, so that more real, effective and reliable input information is provided for the heat simulation and control design of the laser, and the engineering application of the fiber laser is promoted. Meanwhile, the invention also establishes a high-efficiency and automatic evaluation device based on the model, and corresponding performance parameters, effective pumping power, residual pumping power and effective pumping factors under different conditions are automatically calculated according to the model by double measurement of power and spectrum of the LD under different conditions. According to the effective pumping power and pumping factors, a device-level screening reference scheme can be provided for LD and optical fiber components, and real pumping power requirements can be provided for the overall design of the optical fiber laser scheme. According to the residual pump power, the heat load requirement of CPS can be accurately determined, meanwhile, the heat radiation structure design of the laser is optimized, and the light emitting strategy of the optical fiber laser LD is determined. In practical applications, the semiconductor laser can be replaced by a luminescent object with pumping source property, such as a He-Ne laser, an LED lamp, etc., so as to evaluate the pumping characteristics correspondingly.
Compared with the prior art, the invention has the following advantages:
(1) From the LD device screening aspect: according to the effective pumping factors, the width of the mode locking current interval of the LD and the mode locking capacity of the mode locking interval can be evaluated, so that the performance of the LD is compared, and the LD screening standard is established.
(2) From the LD application aspect: 1) Based on the residual pump power maximumFor this power, the pump light receiving power P t of the laser component is designed. /(I)The corresponding current value is often far smaller than the LD rated current value, so that the pump light bearing capacity of the laser can be checked for a long time under the conditions of low current and low output laser power, and the reliability check of the laser is safer and more convenient. 2) Comparing the residual pump power maxima/>, at different temperaturesAnd the laser system pump light bearing power P t, the thermal control temperature range can be calculated. 3) For lasers under certain defined conditions (e.g., weight, volume, etc.), or for the state of the art, process of limited components, the pump withstand power P t cannot exceed the residual pump power maximumThe obtained effective pumping factor data can be fully utilized, the LDs are grouped and arranged in sequence, a new light emitting strategy is established, and when one group of LDs is started to complete conversion from non-locking waves to locking waves, the next group of LDs is started.
(3) From the aspect of system design, the invention can realize automatic operation, and is convenient and efficient in measurement.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (4)
1. The method is characterized in that the device comprises an LD power distribution measuring component, an electric control component and an effective pumping factor calculating component, and the method comprises the following steps:
Providing a driving power supply for the semiconductor laser component to be tested by using the electric control component, and enabling the semiconductor laser component to be tested to emit laser to the LD power distribution measuring component according to a preset current driving instruction; the semiconductor laser component to be tested comprises at least one semiconductor laser;
An electronic control assembly is used for sending a temperature adjustment instruction and a data acquisition instruction to the LD power distribution measurement assembly, so that the LD power distribution measurement assembly adjusts the working environment temperature of the semiconductor laser assembly to be tested based on the temperature adjustment instruction, and acquires the output power and the spectral characteristics of the semiconductor laser assembly to be tested under different currents and different temperatures based on the data acquisition instruction;
An effective pumping factor calculating component is adopted to calculate effective pumping power, effective pumping factors and residual pumping power according to the output power and spectral characteristics of the semiconductor laser component to be measured under different currents and different temperatures; the effective pumping power, the effective pumping factor and the residual pumping power are used for representing the pumping characteristics of the semiconductor laser component to be tested;
When the semiconductor laser component to be tested is a single semiconductor laser, the calculation formula of the effective pumping power is as follows:
；
；
the calculation formula of the effective pumping factor is as follows:
；
The calculation formula of the residual pump power is as follows:
；
Wherein, Representing the effective pumping power, I representing the current, T representing the operating ambient temperature,Representing the wavelength of laser light emitted by a semiconductor laser,The output power of the semiconductor laser under the conditions of the current I and the working environment temperature T; /(I)Representing the effective length of the gain fiber,Representing the density of doped ions of the gain fiber,Representing the pump filling factor in the gain fiber,Wavelength/>, under the conditions of current I and working environment temperature TNormalizing the spectral intensity; /(I)Indicating the wavelength/>, of the gain fiber doped ionsAbsorption cross section size at/(Representing the effective pumping factor under the conditions of current I and working environment temperature T,Representing the residual pumping power under the conditions of current I and working environment temperature T; /(I)、、、Are known amounts.
2. The method according to claim 1, wherein when the semiconductor laser device to be tested is a semiconductor laser array, the effective pump power is calculated according to the formula:
；
the calculation formula of the effective pumping factor is as follows:
=；
The calculation formula of the residual pump power is as follows:
；
Wherein, Representing the effective pump power,Representing the effective pumping power of the ith semiconductor laser in the semiconductor laser array; /(I)Representing the effective pumping factor at current I and operating ambient temperature T,Representing the residual pumping power under the conditions of current I and working environment temperature T; /(I)Representing the residual pump power of the ith semiconductor laser in the semiconductor laser array and N representing the number of semiconductor lasers in the semiconductor laser array.
3. The method for evaluating the pumping characteristics of a semiconductor laser according to claim 2, further comprising:
determining the maximum residual pumping power according to the residual pumping power of the semiconductor laser array under different current conditions by adopting the effective pumping factor calculation component;
Grouping the semiconductor laser arrays to obtain a plurality of semiconductor laser sub-arrays;
The following calculation formula is adopted
Determining a value interval of the grouping number so that each semiconductor laser subarray achieves the maximum residual pumping power in a batch-to-batch peak staggering manner;
Where n=p×q, p denotes the number of packets, q denotes the number of semiconductor lasers in each semiconductor laser sub-array, Representing the maximum residual pump power,Representing the residual pump power at maximum current,Representing the pump power threshold.
4. The method for evaluating the pumping characteristics of a semiconductor laser according to claim 1, further comprising:
Based on effective pumping factors under different current conditions, marking a saturation region current interval of the effective pumping factors as a mode locking current interval, marking a current interval before the mode locking current interval as a non-mode locking current interval, and marking a falling current interval of the effective pumping factors as a loss-of-lock current interval;
and determining screening standards of the semiconductor laser components based on the mode locking current interval, the non-mode locking current interval and the out-of-lock current interval so as to screen semiconductor lasers of different manufacturers, different types and different models.
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