CN117587506B - Substrate bearing mechanism, tray assembly and silicon carbide epitaxial equipment - Google Patents
Substrate bearing mechanism, tray assembly and silicon carbide epitaxial equipment Download PDFInfo
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- CN117587506B CN117587506B CN202410053126.9A CN202410053126A CN117587506B CN 117587506 B CN117587506 B CN 117587506B CN 202410053126 A CN202410053126 A CN 202410053126A CN 117587506 B CN117587506 B CN 117587506B
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- 239000000758 substrate Substances 0.000 title claims abstract description 275
- 230000007246 mechanism Effects 0.000 title claims abstract description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 16
- 230000007704 transition Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000000407 epitaxy Methods 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002277 temperature effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
The application discloses a substrate bearing mechanism, a tray assembly and silicon carbide epitaxial equipment. The substrate bearing mechanism comprises a substrate outer ring, a substrate inner ring and a substrate fixing part, wherein the middle part of the substrate inner ring is provided with a hollowed-out area, the inner side of the substrate inner ring is provided with a positioning part, and two sides of the positioning part are respectively provided with a transition part; the substrate outer ring is sleeved on the substrate inner ring, and the substrate outer ring is lapped on the substrate inner ring; the substrate fixing part is positioned below the substrate inner ring, the substrate fixing part is provided with a supporting part, the supporting part is projected on the side of the substrate inner ring and falls in the hollow area, the supporting part comprises discrete protrusions or sub-protrusions, and the protrusions or sub-protrusions are used for supporting the substrate. Through the design, phenomena of flying discs and flying sheets generated when the substrate grows epitaxially can be reduced, and the temperature uniformity of the substrate side can be improved so as to ensure the epitaxial quality.
Description
Technical Field
The application relates to the technical field of chemical vapor deposition equipment, in particular to a substrate bearing mechanism, a tray assembly and silicon carbide epitaxial equipment.
Background
When the silicon carbide epitaxial device is operated, a substrate is placed on a graphite tray in a reaction chamber for heating, and a reaction gas flows through the surface of the substrate heated to a reaction temperature and chemically reacts on the surface to generate a single crystal film with a certain thickness. To ensure uniformity of the temperature and air flow field on the substrate side, the graphite tray needs to be rotated at high speed (typically at speeds above 500 r/min). Under the state of high-temperature and high-speed rotation, the problems of falling of the substrate flying disc, flying chips, particles on the substrate and the like are easily caused. In addition, the concentration uniformity of the epitaxial process is sensitive to temperature, and the improvement of the uniformity of the substrate side temperature area is also a key link of the process.
The cross section of the substrate bearing mechanism used in the silicon carbide epitaxy at present is schematically shown in fig. 1, the inner ring 1 of the substrate is lapped on the outer ring 2 of the substrate, under the structure, when the structure is in a heating state, the lapping surface 1b of the inner ring of the substrate can generate buckling deformation due to high temperature, the deformation can lift the inner ring of the substrate, thus the bottom surface of the inner ring 1 of the substrate is correspondingly lifted, the substrate 10 positioned on the inner side of the inner ring 1 of the substrate is acted by centrifugal force in the high-speed rotation process, and can move and be inserted below/under the bottom surface 1c of the inner ring 1 of the substrate, thereby waste sheets and even flying sheets are caused. As shown in fig. 2, in the high-speed rotation process, the tip 11 of the substrate positioning edge 12 of the substrate 10 contacts the cut edge 1a of the substrate positioning edge corresponding to the substrate positioning edge 1 in the substrate inner ring 1 under the action of centrifugal force, and meanwhile, one end of the tip 11 of the substrate positioning edge 12 along the outer circumference of the substrate by 180 degrees is tangential to the substrate inner ring 1. During the heating of the substrate 10, the substrate 10 expands thermally, taking a 6 inch silicon carbide substrate and a graphite tray as an example, according to the thermal expansion equation:
Δl=α× Δt×l, where Δl is the expansion amount mm, α is the average coefficient of thermal expansion mm/mm·k, and Δt is the temperature difference K, L is the original length mm. Expansion Δl=4.4x10 of 6 inch silicon carbide substrate from room temperature 293K to 1273K -6
X (1273-293) x150=0.65 mm. Under the deformation, two ends of the substrate 10 (two ends with the length L in fig. 2) are propped against the clamping state of the inner ring 1 of the substrate, at the moment, the stress at the tip 11 of the positioning edge of the substrate is concentrated, and the stress at the tip is easily released when the external conditions are changed (such as temperature, flow field, pressure, rotating speed and the like), so that two damage to the process growth can be brought: 1) In addition to deposition on the substrate during the reaction, a large amount of deposition is generated on the substrate inner ring 1, and stress release at the tip 11 can cause the deposited deposition on the substrate inner ring 1 to crack, so that the hidden danger that particle falls onto the surface of the substrate 10 exists, and the particle falling during the reaction growth is buried to form defects, which reduces the yield of the growth. 2) As the temperature further increases, the expansion increases, and at the same time, the increased stress causes the elastic deformation of the substrate 10, and when the balance is broken, the elastic potential energy is released, causing the flyer, the substrate 10 flies out, breaks and is scrapped in a high-speed rotation state, and other important parts in the reaction chamber are damaged.
Disclosure of Invention
To overcome the above drawbacks, the present application aims to: a substrate carrying mechanism, a tray assembly and silicon carbide epitaxy equipment are provided, wherein the tray assembly can reduce flying discs and flying sheets, and improve the temperature uniformity of a substrate so as to ensure the epitaxy quality.
In order to achieve the above purpose, the application adopts the following technical scheme:
a substrate carrier mechanism for use in a silicon carbide epitaxy apparatus to support a substrate, comprising:
a substrate outer ring, a substrate inner ring, and a substrate fixing portion,
The middle part of the substrate inner ring is provided with a hollow area, the inner side of the substrate inner ring is provided with a positioning part, and two sides of the positioning part are respectively provided with a transition part;
the substrate outer ring is sleeved on the substrate inner ring, and the substrate outer ring is lapped on the substrate inner ring;
The substrate fixing part is positioned below the substrate inner ring, the substrate fixing part is provided with a supporting part, the supporting part is projected on the side of the substrate inner ring and falls in the hollow area, the supporting part comprises discrete protrusions or sub-protrusions, and the protrusions or sub-protrusions are used for supporting the substrate. By the design, the radiation heat is more uniform, and phenomena of flying discs and flying sheets of the substrate during epitaxial growth can be reduced. By optimizing the structure of the supporting part, the contact area of the substrate is reduced, the temperature jump of the contact point area is reduced, the temperature uniformity of the substrate side (the temperature difference between the temperature of the substrate center and the temperature of the substrate edge is within 2 degrees) can be improved, and the epitaxial quality of growth is ensured. The projections or sub-projections may be of discrete design.
In an embodiment, the substrate fixing device further comprises a support ring, wherein the support ring is arranged on the inner side of the inner ring, and the substrate fixing part is arranged on the support ring. By arranging the substrate fixing part, the contact area between the substrate fixing part and the substrate is reduced as much as possible, and heat conducted to the substrate through the substrate fixing part during epitaxial reaction is reduced, so that local temperature elevation points are formed.
In an embodiment, the transition has rounded and/or beveled edges. Therefore, the substrate is heated and expanded under the high temperature effect, and the positioning edge of the substrate can expand/extend along the tangential direction or the oblique direction of the fillet of the transition part, so that the sharp corner of the substrate is prevented from being bound, and the substrate is prevented from being blocked by the inner ring of the substrate.
In one embodiment, the substrate fixing portion is a cylindrical, conical, intermittent annular boss, rectangular or trapezoidal boss. The contact area with the substrate is reduced by optimizing the structure of the substrate fixing part, so that heat is directly conducted to the substrate through the substrate fixing part during epitaxial reaction, and local temperature elevation points are avoided.
In one embodiment, the inner side of the substrate outer ring is provided with a first protruding part extending along the radial direction of the substrate outer ring, and the axial thickness of the first protruding part is smaller than that of the substrate outer ring,
The outer side of the substrate inner ring is provided with a second protruding part which extends along the radial direction of the substrate inner ring, the axial thickness of the second protruding part is smaller than that of the substrate outer ring, the first protruding part is abutted with the second protruding part, the first protruding part is positioned on the upper side of the second protruding part,
And a containing cavity is arranged between the second protruding part and the substrate outer ring, and the containing cavity is used for placing a first clamping part which is arranged on one side of the substrate and protrudes along the axial direction of the substrate.
An embodiment of the present application provides a tray assembly, including:
And a rotating member, wherein a cover plate is arranged on one side of the rotating member, and the substrate carrying mechanism is mounted on the cover plate.
In one embodiment, one side of the rotating component is provided with a flat part along the radial direction and inward along the radial direction, the end part of the flat part is provided with a second protruding rib extending along the radial direction, the second protruding rib is provided with a notch extending along the axial direction, the axial thickness of the second protruding rib is smaller than that of the flat part,
The cover plate is provided with a body, the end part of the body is provided with a third protruding rib and at least one protruding part, the third protruding rib and the at least one protruding part extend along the radial direction of the body, and the protruding part is abutted with the second protruding rib after being embedded into the notch.
In one embodiment, the flat portion has a first protruding rib extending along the axial direction of the rotating member, and the first protruding rib is annular or a combination thereof.
In an embodiment, a fourth protruding rib is disposed on a side of the body close to the third protruding rib, a step portion is disposed on a side of the fourth protruding rib away from the third protruding rib, and when a substrate is disposed on an upper side of the body, the step portion is configured such that the substrate is disposed on a surface of the body, the substrate is disposed in a variable manner, so that heat conducted to the substrate by radiation of the body is improved.
The embodiment of the application provides silicon carbide epitaxial equipment, which comprises the following components: the reaction chamber, its top has the part that sprays, the bottom side in the reaction chamber has above-mentioned tray subassembly.
The substrate bearing mechanism and the tray assembly have the beneficial effects that through the optimization of the structure, the substrate outer ring is lapped on the substrate inner ring when the substrate outer ring and the substrate inner ring are combined, and the lapping surface can be a plane or an inclined plane, so that the substrate outer ring is deformed due to temperature rise during epitaxial growth, the deformation cannot influence the substrate inner ring, and the problem that a flying disc or a flying sheet is caused when the substrate is inserted below the substrate inner ring is avoided. Through setting up the substrate fixed part and optimizing its structure to reduce its area of contact with the substrate, furthest reduces the heat conduction to the substrate through the substrate fixed part when epitaxial reaction, makes the temperature of substrate side even, in order to guarantee epitaxial quality. Through the structural optimization to the body of apron, the third outstanding muscle side of keeping away from of fourth on it has and is provided with the step portion, and when the substrate was placed in the apron, the bottom of substrate had the clearance with the surface of the body of apron, and this clearance changes the setting, improves the heat that is conducted to the substrate through body radiation like this, guarantees the homogeneity of substrate side temperature field. Through the structural optimization to the location portion of substrate inner ring, have transition portion respectively in its both sides, the substrate is heated under the high temperature effect and is expanded, along the fillet tangential direction or the hypotenuse direction expansion of transition portion, avoided the closed angle of substrate to be restricted, make it can not block by the substrate inner ring to reduce the probability that granule (part) drops to the surface of substrate, improve epitaxial growth yield.
Drawings
The accompanying drawings are included to provide an understanding of the technical aspects of the present disclosure, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present disclosure and together with the embodiments of the disclosure, not to limit the technical aspects of the present disclosure. The shapes and sizes of the various components in the drawings are not to scale, and are intended to illustrate the present application only.
Fig. 1 is a schematic cross-sectional view of a conventional substrate carrying mechanism.
Fig. 2 is a schematic view of a conventional substrate carrying mechanism after a substrate is placed thereon.
Fig. 3 is a schematic perspective view of a tray assembly according to an embodiment of the application.
Fig. 4 is a schematic view of the tray assembly of fig. 3 from a perspective.
Figure 5 is a schematic view in isometric section at A-A of figure 4.
Fig. 6 is a schematic cross-sectional view at A-A in fig. 4.
Fig. 7 is an enlarged partial schematic view at a in fig. 6.
Fig. 8 is a schematic cross-sectional view of a substrate carrying mechanism according to another embodiment of the present application.
Fig. 9 is an enlarged partial schematic view at c in fig. 8.
Fig. 10 is a schematic cross-sectional view at B-B in fig. 4.
Fig. 11 is an enlarged partial schematic view at b in fig. 10.
Fig. 12 is a schematic view of the structure of the hidden substrate in fig. 4.
Fig. 13 is a schematic view of the structure of the outer ring of the substrate in fig. 12.
Fig. 14 is a schematic view of the structure of the inner ring of the substrate in fig. 13.
Fig. 15 is a perspective view of a rotary member according to an embodiment of the present application.
Fig. 16 is a schematic view of the structure of the blind cover in fig. 15.
Fig. 17 is a schematic view of the cover plate in fig. 15.
Fig. 18 is a schematic view of the structure of the base plate in fig. 15.
Fig. 19 is a schematic perspective view of a substrate fixing portion according to an embodiment of the present application.
Fig. 20 and 21 are schematic views of a substrate in a stable state after being placed on a substrate carrying mechanism according to an embodiment of the present application.
Detailed Description
The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present application and are not intended to limit the scope of the present application. The implementation conditions employed in the examples may be further adjusted as in the case of the specific manufacturer, and the implementation conditions not specified are typically those in routine experiments.
The application discloses a substrate bearing mechanism, a tray assembly and silicon carbide epitaxial equipment. The substrate bearing mechanism comprises a substrate outer ring, a substrate inner ring and a substrate fixing part, wherein the middle part of the substrate inner ring is provided with a hollowed-out area; the substrate outer ring is sleeved on the substrate inner ring, and the substrate outer ring is lapped on the substrate inner ring; the substrate fixing part is arranged below the substrate inner ring, the supporting part is arranged on the substrate fixing part, the supporting part is arranged in the hollow area in a side projection manner of the substrate inner ring, the supporting part comprises discrete bulges or sub-bulges, the bulges or sub-bulges are used for supporting the substrate, the phenomena of flying discs and flying sheets of the substrate during epitaxial growth can be reduced through the design, the temperature uniformity of the substrate side can be improved, and the epitaxial quality of the growth can be ensured.
The substrate carrying mechanism, the tray assembly and the silicon carbide epitaxy apparatus according to the present application are described next with reference to fig. 3 to 21.
Fig. 3 is a schematic perspective view of a tray assembly according to an embodiment of the present application, which includes a substrate carrying mechanism 100 and a rotating member 150,
The substrate carrying mechanism 100 is used for placing a substrate 200 (a schematic top view of the substrate 200 is shown in fig. 4),
The substrate carrying mechanism 100 is placed on the rotating member 150 and drives the substrate carrying mechanism 100 to rotate based on the rotating member 150, thereby driving the substrate to rotate. The preferred rotary member 150 is coupled to a driving member (not shown) for rotating the rotary member based on the driving of the driving member.
An isometric cross-sectional schematic view of the tray assembly at A-A of fig. 4 is shown in fig. 5 and a cross-sectional schematic view is shown in fig. 6.
The substrate carrying mechanism 100 includes: the outer substrate ring 110, the inner substrate ring 120, the support ring 140 and the substrate 130,
The middle part of the substrate inner ring 120 is a hollow area for accommodating the substrate;
the substrate outer ring 110 is sleeved on the substrate inner ring 120, and the substrate outer ring 110 is lapped on the substrate inner ring 120,
The substrate 130 is hollow and annular, one side of the substrate is provided with a first clamping part 131 protruding along the axial direction of the substrate, the substrate is provided with a first containing part 132 which is arranged on the same side as the first clamping part 131, the substrate is also provided with a second containing part 133, and the second containing part 133 is arranged opposite to the first containing part 132.
The first receiving portion 132 is configured to receive the support ring 140, and one side of the support ring 140 has a protrusion 141 extending along an axial direction thereof, and the protrusion 141 is configured to abut against the substrate 200. The projection 141 on the inner ring side of the substrate falls on the hollowed-out area, and the projection 141 is used for supporting the placed substrate. Preferably, the protrusion 141 may have a cylindrical shape, see fig. 9, fig. 9 is a partially enlarged view of a portion b in fig. 8 or see fig. 19, and fig. 19 is a schematic view of a solid structure of a substrate fixing portion, preferably, the substrate fixing portion includes a support ring 140. In other embodiments, the substrate fixing portion includes a support ring and a base plate, which may be integrally designed. Preferably, the combination of protrusions 141 is circular and has a diameter smaller than the diameter (outer diameter) of the substrate. The protrusions 141 may be protrusions of geometric shapes such as truncated cones, protrusions formed of intermittent rings, rectangular protrusions, and trapezoidal protrusions, and by such a design, the contact area between the protrusions and the substrate is minimized, heat generated from the heater in the rotating member 150 during the epitaxial reaction is reduced to be conducted to the substrate through the protrusions, abrupt temperature changes in the contact point area are reduced, and the temperature uniformity at the substrate side (the temperature difference between the temperature at the center of the substrate and the temperature at the edge of the substrate is within 2 °), so that the thickness and concentration uniformity in the wafer of the grown epitaxial wafer can be improved. The axial depth/thickness of the first receiving portion 132 is the same as or substantially the same as the axial thickness (without the protrusions) of the support ring 140, so that the top surface of the support ring 140 is flush or substantially flush with the top surface 130a of the substrate 130 after the support ring 140 is placed in the first receiving portion 132. The substrate outer ring is lapped on the substrate inner ring, namely the substrate outer ring is partially pressed on the substrate inner ring, so that the substrate outer ring is deformed due to temperature rise during epitaxial growth, the deformation can not influence the substrate inner ring, and the problem that a flying disc or a flying disc is caused when the substrate is inserted below the substrate inner ring is avoided.
A schematic cross-sectional view of the tray assembly at a view angle is shown in fig. 6, a partial enlargement of a of fig. 6 is shown in fig. 7, a modification of the embodiment of fig. 7 is shown in fig. 8 and 9, and fig. 8 is a schematic cross-sectional view of a substrate carrying mechanism of an example; fig. 9 is an enlarged partial schematic view at c in fig. 8. One side of the supporting ring 240 has a protrusion 241 extending along the axial direction, the protrusion 241 may be continuous (the protrusion 241 is annular as viewed as a whole), a sub-protrusion 2411 is disposed on the protrusion 241, a recess is disposed between two adjacent sub-protrusions 2411, and the contact area between the sub-protrusions 2411 and the substrate is reduced, so that a temperature elevation point (which is unfavorable for process temperature field adjustment) is formed at the contact point, and the temperature difference between the center side of the substrate and the edge side of the substrate can be ensured to be within 2 ℃. In other embodiments, the protrusions 241 may be discrete, and the discrete protrusions 241 are combined with the sub-protrusions 2411 to further reduce the contact area with the substrate, thereby ensuring that the temperature difference between the center side and the edge side of the substrate is within 2 ℃ during the epitaxial process while ensuring support.
The inner side of the substrate outer ring 110 has a first protrusion 111 extending in a radial direction thereof, and a thickness H2 of the first protrusion 111 is smaller than a thickness H1 of the substrate outer ring 110. Preferably, the thickness H2 of the first protrusion 111 is half the thickness H1 of the substrate outer ring 110.
The outer side of the substrate inner ring 120 has a second protrusion 121 extending radially outward therefrom, and the thickness H3 of the second protrusion 121 is smaller than the thickness H4 of the substrate outer ring 120. The inner side of the inner substrate ring 120 has a positioning portion 122 (sometimes referred to as a trimming) and two sides of the positioning portion 122 have a transition portion 122a, respectively, the transition portion 122a has a rounded corner 122a1 or a beveled corner 122a2, by such design, when the substrate 200 and the inner substrate ring 120 reach a stable state under the action of a rotational centrifugal force after being placed on the substrate carrying mechanism, the positioning edge 210 of the substrate is tangent to the rounded corner 122a of the transition portion 122a of the inner substrate ring 120 (see fig. 20) or is collinear with the beveled corner 122a2 of the transition portion 122a of the inner substrate ring 120 (see fig. 21), even if the substrate is heated under the action of high temperature, the positioning edge of the substrate expands along the rounded corner tangential direction or the beveled corner direction of the transition portion 122a, and the sharp corner 211 of the substrate 200 is not bound and cannot be blocked with the inner substrate ring.
When the substrate outer ring 110 is combined with the substrate inner ring 120, the first protruding portion 111 abuts against the second protruding portion 121, the first protruding portion 111 is located above the second protruding portion 121, and a receiving cavity is formed between the second protruding portion 121 and the substrate outer ring 110, and the receiving cavity is used for placing the first clamping portion 131. In the present embodiment, the thickness of the first protruding portion 111 and the second protruding portion 121 combined is the same as or substantially the same as the thickness of the substrate outer ring 110 or the thickness of the substrate inner ring 120. By positioning the first protruding portion 111 above the second protruding portion 121, the substrate outer ring is not affected by the temperature rise deformation during epitaxial growth on the position of the substrate inner ring relative to the substrate, and the problem that the flying disc flies is caused by the substrate being inserted below the substrate inner ring is avoided.
A first connection portion 153 is provided at one side of the rotating member 150, and the first connection portion 153 is configured to mate with a second connection portion 172 on the base plate 170, so that the rotating member 150 is reliably connected to the base plate 170, and the rotating member is prevented from sliding relative to the base plate. The first connecting portion 153 may be a notch, and the second connecting portion 172 may be a blocking portion matching the notch. In other embodiments, the first connection portion 153 may be a blocking portion, and the second connection portion 172 may be a notch matching the notch. As long as the first connection portion 153 and the second connection portion 172 can be connected to each other, and then the rotation member and the base plate can be prevented from sliding relative to each other.
The other side (side away from the first connecting portion 153) of the rotating member 150 has a flat portion 151 extending radially and inwardly, and the flat portion 151 has a first protruding rib 152 extending axially of the rotating member 150, and the first protruding rib 152 is annular (when the protruding rib 152 is continuous) or a combination thereof (when the protruding rib 152 is discontinuous). The flat portion 151 has a second protruding rib 151a extending in a radial direction thereof, the second protruding rib 151a being provided with a second notch 151a1, the second protruding rib 151a having a thickness smaller than that of the flat portion 151 (as viewed in an axial direction of the rotary member 150). In the present embodiment, the number of the second notches 151a1 is2, and in other embodiments, the number of the second notches 151a1 may be 1,3, 4 or more. A heater (not shown) is disposed in the rotating member 150, and the heater may be a graphite heater.
The bottom plate 170 has a body 171 having a cylindrical shape, one side of the body 171 has a third protrusion 173 and a second connection portion 172, and a through hole 174 is formed in the middle of the bottom plate 170, and the through hole 174 is used for connecting a hollow rotation shaft 180.
A cover plate 160 provided on the side of the rotating member 150 remote from the bottom plate 170,
The cover plate 160 has a body 160a, the end of the body 160a has a third protruding rib 161 extending in a radial direction thereof, and the thickness of the third protruding rib 161 is smaller than the thickness of the body 160a (in an axial direction of the cover plate 160), and a protrusion 160b extending in a radial direction thereof is provided on the end of the body 160 a.
In an embodiment, a fourth protruding rib 162 is disposed on the side of the body 160a near the third protruding rib 161, the fourth protruding rib 162 is used for abutting against the support ring 140, and a gap e is formed between the bottom of the support ring 140 and the body 160 a. In this embodiment, the width of the fourth protruding rib 162 (in the radial direction of the body 160 a) is smaller than the axial thickness of the support ring 140, so that the contact area between the fourth protruding rib 162 and the support ring 140 is reduced, and the heat conducted to the support ring 140 through the fourth protruding rib 162 during the epitaxial reaction is reduced, resulting in the formation of local temperature elevation points. In other embodiments, the fourth protruding rib 162 is provided with a sub-protrusion, and a recess is formed between two adjacent sub-protrusions (see fig. 9 for structure) to reduce the contact area with the support ring 140, thereby reducing the formation of a temperature elevation point at the contact point. In other embodiments, the fourth protruding rib 162 may be omitted, and after the support ring 140 is disposed in the first receiving portion 132, a gap is formed between the bottom of the support ring 140 and the body 160a, so as to prevent heat of the body 160a from being directly transferred to the support ring 140.
The step part is arranged on the side, far away from the third protruding rib 161, of the fourth protruding rib 162 on the body 160a, when a substrate is arranged on the upper side of the body 160a, a gap d is formed between (the bottom of) the substrate and the surface of the body 160a, and the distance between (the bottom of) the substrate and the surface of the body 160a is not completely the same (such as gradually increasing or gradually decreasing or periodically changing) from inside to outside), so that the heat conducted to the substrate by the radiation of the body 160a is improved, and the uniformity of the temperature field on the side of the substrate is ensured. When the cover plate is combined with the rotating component 150, the protruding part 160b is embedded into the second notch 151a1, and the protruding part 160b abuts against the second protruding rib 153 after the conversion, so that the cover plate is connected with the rotating component.
In an embodiment, a fifth protruding rib 163, a step portion 164 and a recess 165 are sequentially disposed on the side of the fourth protruding rib 162, far from the third protruding rib 161, on the body 160a, the recess 165 is located in the middle of the body 160a, and when the substrate is placed on the upper side of the body 160a, the distances (gaps) between the fifth protruding rib 163, the step portion 164 and the recess 165 and the substrate (bottom) are gradually reduced, so that the heat conducted to the substrate by the radiation of the body 160a is improved, the uniformity of the temperature field on the side of the substrate is ensured, and the thickness and the doping concentration of the grown epitaxial wafer are uniform. The protruding height of the fifth protruding rib 163 is higher than the protruding height of the fourth protruding rib 162 (seen in the axial direction of the body 160 a) in this embodiment.
The embodiment of the application provides a silicon carbide epitaxial device, which is provided with a reaction cavity, wherein the reaction cavity is columnar, a spraying component is arranged at the top of the reaction cavity, the spraying component is connected to a gas source for providing epitaxial reaction through a pipeline, the tray component is arranged at the bottom side in the reaction cavity, and the gas sprayed by the spraying component flows to the side of the tray component when the reaction cavity operates so as to react on the surface of a substrate on the tray component, so that a film (such as a monocrystalline film, also called epitaxy) is grown. The reaction chamber operates with the tray assembly rotating at a certain speed.
The above embodiments are provided to illustrate the technical concept and features of the present application, and are intended to enable those skilled in the art to understand the present application and implement the same according to the present application, not to limit the scope of the present application. All equivalent changes or modifications made by the spirit of the application are intended to be covered by the scope of the application.
Claims (7)
1. A substrate carrier mechanism for use in a silicon carbide epitaxy apparatus to support a substrate, comprising:
a substrate outer ring, a substrate inner ring, and a substrate fixing portion,
The middle part of the substrate inner ring is provided with a hollow area, the inner side of the substrate inner ring is provided with a positioning part, two sides of the positioning part are respectively provided with a transition part, and the transition part is provided with a round angle and/or a bevel angle;
the substrate outer ring is sleeved on the substrate inner ring, and the substrate outer ring is lapped on the substrate inner ring,
The inner side of the substrate outer ring is provided with a first protruding part extending along the radial direction of the substrate outer ring, the axial thickness of the first protruding part is smaller than that of the substrate outer ring,
The outer side of the substrate inner ring is provided with a second protruding part extending along the radial direction of the second protruding part, the axial thickness of the second protruding part is smaller than that of the substrate outer ring, the first protruding part is abutted with the second protruding part, the first protruding part is positioned on the upper side of the second protruding part,
A containing cavity is formed between the second protruding part and the substrate outer ring, and the containing cavity is used for placing the first clamping part;
The substrate fixing part is positioned below the substrate inner ring, the substrate fixing part is provided with a supporting part, the supporting part is projected on the side of the substrate inner ring and falls in the hollow area, the supporting part comprises discrete protrusions or sub-protrusions, and the protrusions or sub-protrusions are used for supporting the substrate.
2. The substrate carrier as recited in claim 1 further comprising a support ring,
The support ring is arranged on the inner side of the inner ring, and the substrate fixing part is arranged on the support ring.
3. The substrate carrying mechanism as claimed in claim 1, wherein the substrate fixing portion has a cylindrical shape, a truncated cone shape, a truncated boss formed by an intermittent ring, a rectangular table or a trapezoidal table shape.
4. A tray assembly, comprising:
The rotating component is provided with a cover plate on one side, the cover plate is provided with a body, the end part of the body is provided with a third protruding rib extending along the radial direction of the cover plate, a fourth protruding rib is arranged on the side, close to the third protruding rib, of the body, a fifth protruding rib, a step part and a dent are sequentially arranged on the side, far away from the third protruding rib, of the fourth protruding rib, the dent is positioned in the middle of the body, when a substrate is placed on the upper side of the body, the gap between the surface of the body and the substrate is changed,
The cover plate is provided with the substrate carrying mechanism according to any one of claims 1 to 3.
5. The tray assembly of claim 4, wherein,
One side of the rotating component is provided with a flat part extending along the radial direction and inwards, the end part of the flat part is provided with a second protruding rib extending along the radial direction, the second protruding rib is provided with a notch extending along the axial direction, the axial thickness of the second protruding rib is smaller than that of the flat part,
The cover plate is provided with a body, the end part of the body is provided with at least one protruding part extending along the radial direction of the body, and the protruding part is abutted with the second protruding rib after being embedded into the notch.
6. The tray assembly of claim 5, wherein,
The flat part is provided with a first protruding rib extending along the axial direction of the rotating part, and the first protruding rib is annular or a combination of the first protruding rib and the first protruding rib is annular.
7. A silicon carbide epitaxy apparatus, comprising:
a reaction chamber, the top of which is provided with a spraying component,
A bottom side within the reaction chamber having a tray assembly as claimed in any one of claims 4 to 6.
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| CN202410053126.9A CN117587506B (en) | 2024-01-15 | 2024-01-15 | Substrate bearing mechanism, tray assembly and silicon carbide epitaxial equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208266260U (en) * | 2018-01-29 | 2018-12-21 | 北京北方华创微电子装备有限公司 | Block platen component and semiconductor processing |
| CN215418123U (en) * | 2021-06-30 | 2022-01-04 | 苏州焜原光电有限公司 | Wafer carrying disc of ultrahigh vacuum equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792273A (en) * | 1997-05-27 | 1998-08-11 | Memc Electric Materials, Inc. | Secondary edge reflector for horizontal reactor |
| US11081413B2 (en) * | 2018-02-23 | 2021-08-03 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with inner and outer cavities |
| CN217869186U (en) * | 2022-06-28 | 2022-11-22 | 迪希埃(北京)半导体技术有限公司 | Substrate tray |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208266260U (en) * | 2018-01-29 | 2018-12-21 | 北京北方华创微电子装备有限公司 | Block platen component and semiconductor processing |
| CN215418123U (en) * | 2021-06-30 | 2022-01-04 | 苏州焜原光电有限公司 | Wafer carrying disc of ultrahigh vacuum equipment |
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