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CN117572732A - Leveling auxiliary device and leveling method - Google Patents

Leveling auxiliary device and leveling method Download PDF

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Publication number
CN117572732A
CN117572732A CN202410058538.1A CN202410058538A CN117572732A CN 117572732 A CN117572732 A CN 117572732A CN 202410058538 A CN202410058538 A CN 202410058538A CN 117572732 A CN117572732 A CN 117572732A
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China
Prior art keywords
leveling
mask plate
silicon wafer
hole
ball
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吴云涛
姜小光
黄逊志
张惠
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Shanghai Lieth Precision Equipment Co ltd
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Shanghai Lieth Precision Equipment Co ltd
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Priority to CN202410058538.1A priority Critical patent/CN117572732A/en
Publication of CN117572732A publication Critical patent/CN117572732A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明公开了一种调平辅助装置,包括:用于吸附掩模板的掩模板吸附台,该掩模板吸附台的中心设置有通孔并且沿该通孔周向布置有多个滑槽,其中硅片能够通过该通孔从该掩模板吸附台下方上升,并且该多个滑槽的数目大于等于3个;以及多个调平组件,每个调平组件设置在该多个滑槽中的一个滑槽中,其中每个调平组件包括小球和控制件,并且各个调平组件中小球的直径相同,其中,每个调平组件的控制件能够控制相应的小球滑动至该掩模板与该硅片之间。还公开了利用调平辅助装置进行被动调平的方法。

The invention discloses a leveling auxiliary device, which includes: a mask plate adsorption platform for adsorbing a mask plate. A through hole is provided in the center of the mask plate adsorption platform and a plurality of slide grooves are arranged circumferentially along the through hole, wherein The silicon wafer can be lifted from below the mask adsorption table through the through hole, and the number of the plurality of chutes is greater than or equal to 3; and a plurality of leveling components, each leveling component is arranged in the plurality of chutes. In a chute, each leveling assembly includes a small ball and a control member, and the diameter of the small balls in each leveling assembly is the same, wherein the control member of each leveling assembly can control the corresponding small ball to slide to the mask plate with the silicon wafer. A method of passive leveling using a leveling assist device is also disclosed.

Description

调平辅助装置及调平方法Leveling auxiliary device and leveling method

技术领域Technical field

本发明涉及半导体设备领域,具体涉及一种调平辅助装置及被动调平方法。The invention relates to the field of semiconductor equipment, and in particular to a leveling auxiliary device and a passive leveling method.

背景技术Background technique

在半导体领域中,对半导体设备的处理往往涉及光刻工艺。为提高曝光质量,必须保证掩模板与硅片之间的平行度,这需要用到调平装置。In the semiconductor field, processing of semiconductor devices often involves photolithography processes. In order to improve the exposure quality, the parallelism between the mask plate and the silicon wafer must be ensured, which requires the use of a leveling device.

传统的调平装置大多采用复杂的装置,如传感器、电机、相机等,结构复杂,且成本较高、调平操作复杂。调平装置也可以利用掩模板和硅片直接接触贴合的方式进行调平,但是往往由于硅片上表面有光刻胶,接触后粘在一起,难以分开。Most traditional leveling devices use complex devices, such as sensors, motors, cameras, etc., with complex structures, high costs, and complicated leveling operations. The leveling device can also be leveled by directly contacting the mask and the silicon wafer for leveling, but often due to the photoresist on the upper surface of the silicon wafer, they stick together after contact and are difficult to separate.

针对现有技术的上述不足,期望提供一种改进的调平辅助装置和被动调平方法。In view of the above-mentioned shortcomings of the prior art, it is desired to provide an improved leveling auxiliary device and passive leveling method.

发明内容Contents of the invention

以下给出一个或多个方面的简要概述以提供对这些方面的基本理解。此概述不是所有构想到的方面的详尽综览,并且既非旨在标识出所有方面的关键性或决定性要素亦非试图界定任何或所有方面的范围。其唯一的目的是以简化形式给出一个或多个方面的一些概念以作为稍后给出的更详细描述之序言。A brief overview of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an extensive overview of all contemplated aspects and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

本发明提供了一种调平辅助装置,包括:用于吸附掩模板的掩模板吸附台,该掩模板吸附台的中心设置有通孔并且沿该通孔周向布置有多个滑槽,其中硅片能够通过该通孔从该掩模板吸附台下方上升,并且该多个滑槽的数目大于等于3个;以及多个调平组件,每个调平组件设置在该多个滑槽中的一个滑槽中,其中每个调平组件包括小球和控制件,并且各个调平组件中小球的直径相同,其中,每个调平组件的控制件能够控制相应的小球滑动至该掩模板与该硅片之间。The invention provides a leveling auxiliary device, which includes: a mask plate adsorption platform for adsorbing a mask plate. A through hole is provided in the center of the mask plate adsorption platform and a plurality of slide grooves are arranged circumferentially along the through hole, wherein The silicon wafer can be lifted from below the mask adsorption table through the through hole, and the number of the plurality of chutes is greater than or equal to 3; and a plurality of leveling components, each leveling component is arranged in the plurality of chutes. In a chute, each leveling assembly includes a small ball and a control member, and the diameter of the small balls in each leveling assembly is the same, wherein the control member of each leveling assembly can control the corresponding small ball to slide to the mask plate with the silicon wafer.

在一些实施例中,通孔为圆形通孔,并且圆形通孔的直径大于硅片。In some embodiments, the through hole is a circular through hole, and the diameter of the circular through hole is larger than the silicon wafer.

在一些实施例中,每个调平组件的控制件包括簧片、限位件和气缸。In some embodiments, the control member of each leveling assembly includes a spring, a stop member, and a cylinder.

在一些实施例中,每个调平组件的簧片的一端设置有固定孔,小球粘接于固定孔内,簧片的另一端设置有连接孔,并且簧片通过螺钉和连接孔固定于限位件,限位件上设置有气缸固定槽和气缸固定孔,气缸的连接杆固定在气缸固定槽中并且通过螺钉和气缸固定孔被锁紧。In some embodiments, one end of the reed of each leveling assembly is provided with a fixing hole, the small ball is bonded in the fixing hole, the other end of the reed is provided with a connecting hole, and the reed is fixed to the reed through screws and the connecting hole. The limiter is provided with a cylinder fixing groove and a cylinder fixing hole. The connecting rod of the cylinder is fixed in the cylinder fixing groove and is locked by screws and cylinder fixing holes.

在一些实施例中,每个调平组件的控制件通过气缸的运动推动小球离开固定孔以滑动至掩模板与硅片之间。In some embodiments, the control member of each leveling assembly pushes the ball out of the fixing hole through the movement of the cylinder to slide between the mask plate and the silicon wafer.

在一些实施例中,簧片的厚度在0.09mm至0.12mm之间。In some embodiments, the thickness of the reed is between 0.09mm and 0.12mm.

在一些实施例中,小球的材料包括陶瓷或金属。In some embodiments, the material of the pellets includes ceramic or metal.

在一些实施例中,该多个滑槽沿通孔均匀分布。In some embodiments, the plurality of chute grooves are evenly distributed along the through hole.

在一些实施例中,掩模板吸附台通过吸附槽或吸附孔来吸附掩模板。In some embodiments, the mask plate adsorption platform absorbs the mask plate through adsorption grooves or adsorption holes.

本发明还提供了利用前述调平辅助装置进行被动调平的方法,包括:将掩模板吸附在掩模板吸附台上;使硅片通过该掩模板吸附台的通孔从该掩模板吸附台下方上升;当该硅片上升到与该掩模板吸附台的距离满足预设条件时,通过每个调平组件的控制件控制相应小球滑动至该掩模板与该硅片之间;以及使该硅片继续上升直至每个小球的顶部抵接该掩模板并且底部抵接该硅片。The present invention also provides a method for passive leveling using the aforementioned leveling auxiliary device, which includes: adsorbing the mask plate on the mask plate adsorption platform; allowing the silicon wafer to pass through the through hole of the mask plate adsorption platform and move from the bottom of the mask plate adsorption platform. Rise; when the silicon wafer rises to a distance from the mask plate adsorption stage that meets the preset conditions, control the corresponding small ball to slide between the mask plate and the silicon wafer through the control part of each leveling component; and make the The silicon wafer continues to rise until the top of each ball contacts the mask and the bottom contacts the silicon wafer.

本发明的技术方案在硅片和掩模板之间设置至少三个直径相同的小球,当硅片上升到一定高度后小球的顶部抵接掩模板,底部抵接硅片,从而实现硅片与掩模板之间的被动调平。本发明的调平辅助装置能够快速实现硅片与掩模板之间的被动调平,且结构简单、成本低。The technical solution of the present invention is to arrange at least three small balls with the same diameter between the silicon wafer and the mask plate. When the silicon wafer rises to a certain height, the top of the small ball contacts the mask plate and the bottom contacts the silicon wafer, thereby realizing the silicon wafer operation. Passive leveling with mask. The leveling auxiliary device of the present invention can quickly realize passive leveling between the silicon wafer and the mask plate, and has a simple structure and low cost.

附图说明Description of the drawings

结合附图理解下面阐述的详细描述时,本发明的特征、本质和优点将变得更加明显。在附图中,相同附图标记始终作相应标识。要注意,所描述的附图只是示意性的并且是非限制性的。在附图中,一些部件的尺寸可放大并且出于解说性的目的不按比例绘制。The characteristics, nature and advantages of the present invention will become more apparent when the detailed description set forth below is understood in conjunction with the accompanying drawings. In the drawings, identical reference characters are identified accordingly throughout. It is to be noted that the figures described are schematic and non-limiting only. In the drawings, the dimensions of some components may be exaggerated and not drawn to scale for illustrative purposes.

图1示出了本发明的调平辅助装置的掩模板吸附台的示意图。Figure 1 shows a schematic diagram of the mask adsorption platform of the leveling auxiliary device of the present invention.

图2-图4示出了本发明的调平辅助装置的调平组件的结构示意图。Figures 2 to 4 show schematic structural views of the leveling assembly of the leveling auxiliary device of the present invention.

图5示出了利用本发明的调平辅助装置进行被动调平的示例方法。Figure 5 shows an example method of passive leveling using the leveling aid of the present invention.

图6示出了利用本发明的调平辅助装置进行被动调平过程中小球滑动的示意图。Figure 6 shows a schematic diagram of the ball sliding during passive leveling using the leveling auxiliary device of the present invention.

图7示出了利用本发明的调平辅助装置进行被动调平的过程中的系统侧视图。Fig. 7 shows a side view of the system during passive leveling using the leveling auxiliary device of the present invention.

图8示出了利用本发明的调平辅助装置进行被动调平后的系统侧视图。Figure 8 shows a side view of the system after passive leveling using the leveling auxiliary device of the present invention.

具体实施方式Detailed ways

为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图对本发明进一步详细说明。在以下详细描述中,阐述了许多具体细节以提供对所描述的示例性实施例的透彻理解。然而,对于本领域技术人员显而易见的是,可以在没有这些具体细节中的一些或全部的情况下实践所描述的实施例。在其它示例性实施例中,没有详细描述公知的结构,以避免不必要地模糊本公开的概念。应当理解,本文所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。同时,在不冲突的情况下,实施例所描述的各个方面可以任意组合。In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the described exemplary embodiments. However, it will be apparent to one skilled in the art that the described embodiments may be practiced without some or all of these specific details. In other exemplary embodiments, well-known structures have not been described in detail to avoid unnecessarily obscuring the concepts of the present disclosure. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. At the same time, various aspects described in the embodiments can be combined arbitrarily without conflict.

如上文提到的,现有技术的调平装置结构复杂、成本较高,且调平操作复杂。As mentioned above, the leveling device in the prior art has a complex structure, high cost, and complicated leveling operations.

本发明提出了一种低成本的调平辅助装置,能够快速实现硅片和掩模板的调平。本发明通过在硅片和掩模板之间设置至少三个小球,当硅片上升到一定高度后小球的顶部抵接掩模板,小球的底部抵接硅片。此时,硅片和掩模板之间的距离等于小球的直径,从而实现了硅片与掩模板之间的被动调平。The present invention proposes a low-cost leveling auxiliary device that can quickly achieve leveling of silicon wafers and masks. In the present invention, at least three small balls are arranged between the silicon wafer and the mask plate. When the silicon wafer rises to a certain height, the tops of the small balls contact the mask plate, and the bottoms of the small balls contact the silicon wafer. At this time, the distance between the silicon wafer and the mask is equal to the diameter of the ball, thereby achieving passive leveling between the silicon wafer and the mask.

本发明的调平辅助装置包括掩模板吸附台和调平组件两个部分。图1示出了本发明的调平辅助装置的掩模板吸附台的示意图。The leveling auxiliary device of the present invention includes two parts: a mask plate adsorption platform and a leveling assembly. Figure 1 shows a schematic diagram of the mask adsorption platform of the leveling auxiliary device of the present invention.

掩模板吸附台用于吸附掩模板。具体而言,掩模板吸附台可以通过吸附槽来吸附掩模板。在另外一些实现中,掩模板吸附台也可以通过吸附孔(图1中未示出)来吸附掩模板。The mask plate adsorption stage is used to absorb the mask plate. Specifically, the mask plate adsorption stage can adsorb the mask plate through the adsorption groove. In other implementations, the mask plate adsorption stage can also absorb the mask plate through adsorption holes (not shown in Figure 1).

如图1所示,掩模板吸附台的中心设置有一圆形通孔,该圆形通孔的直径大于硅片直径,从而使得硅片可以从掩模板吸附台下方上升至该圆形通孔内或者下方。As shown in Figure 1, a circular through hole is provided in the center of the mask adsorption stage. The diameter of the circular through hole is larger than the diameter of the silicon wafer, so that the silicon wafer can rise from below the mask adsorption stage into the circular through hole. Or below.

应注意,虽然图1中示出了圆形通孔,但这仅是示例性的而非限制性的。在具体实现中,还可以采用其他形状的通孔(诸如多边形、椭圆形、不规则形状等等)。It should be noted that although circular through holes are shown in FIG. 1 , this is only exemplary and not limiting. In specific implementations, other shapes of through holes (such as polygons, ellipses, irregular shapes, etc.) can also be used.

进一步如图1所示,掩模板吸附台上设置有三个滑槽,该三个滑槽沿圆形通孔周向均匀分布。在本发明中,每个滑槽中可设置有调平组件(图1中未示出)。关于调平组件将在下文结合图2-图4进一步详细描述。As further shown in Figure 1, three chute grooves are provided on the mask plate adsorption table, and the three chute grooves are evenly distributed along the circumferential direction of the circular through hole. In the present invention, a leveling assembly (not shown in Figure 1) may be provided in each chute. The leveling assembly will be described in further detail below in conjunction with Figures 2-4.

应注意,虽然图1中示出了沿通孔均匀分布的三个滑槽,但这仅是示例性的。在具体实现中,本领域技术人员可以根据实际情况采用不同方式来实现滑槽。例如,可以采用三个以上的滑槽(例如,四个、五个等等),可以使滑槽沿通孔非均匀分布等等。It should be noted that although three chutes evenly distributed along the through hole are shown in FIG. 1 , this is only exemplary. In specific implementation, those skilled in the art can implement the chute in different ways according to actual conditions. For example, more than three chutes (eg, four, five, etc.) may be used, the chutes may be distributed non-uniformly along the through hole, and so on.

在硅片从掩模板吸附台下方上升的过程中,可以通过设置于掩模板吸附台的滑槽中的调平组件来实现硅片和掩模板之间的调平。下面将结合图2-图4来解说调平组件的具体结构。During the process of the silicon wafer rising from below the mask plate adsorption stage, leveling between the silicon wafer and the mask plate can be achieved through a leveling component disposed in the chute of the mask plate adsorption stage. The specific structure of the leveling assembly will be explained below with reference to Figures 2-4.

图2示出了本发明的调平辅助装置的调平组件的示意图。Figure 2 shows a schematic diagram of the leveling assembly of the leveling assist device of the present invention.

以图1中的三个滑槽为例,可以在该三个滑槽中的每个滑槽中设置相应的调平组件,其中每个调平组件包括小球和相关联的控制件。Taking the three chutes in Figure 1 as an example, a corresponding leveling component can be provided in each of the three chutes, where each leveling component includes a small ball and an associated control piece.

为了便于解说,图2中示出了一个滑槽中的一个调平组件。如图所示,调平组件包括一个小球和控制件,控制件用于控制小球的运动,并且可以包括簧片、限位件和气缸。For ease of explanation, a leveling assembly in a chute is shown in FIG. 2 . As shown in the figure, the leveling assembly includes a small ball and a control part. The control part is used to control the movement of the small ball and may include a spring, a limiter and a cylinder.

当不需要对硅片和掩模板进行调平时,调平组件处于不工作状态。此时,小球可以位于滑槽内,气缸未被激活。如图所示,小球位于滑槽内的簧片上,而不是位于硅片与掩模板之间。气缸处于收回状态,而未伸出并驱动小球滑动离开滑槽。When there is no need to level the silicon wafer and the mask, the leveling component is inactive. At this time, the ball can be located in the chute and the cylinder is not activated. As shown in the figure, the ball is located on the reed in the chute rather than between the silicon wafer and the mask. The cylinder is in the retracted state without extending and drives the ball to slide away from the chute.

当需要对硅片和掩模板进行调平时,调平组件处于工作状态。此时,可以激活气缸进行运动。当气缸伸出并接触小球时,可以推动小球离开滑槽并滑动至硅片与掩模板之间,进而实现硅片与掩模板之间的被动调平。When the silicon wafer and mask need to be leveled, the leveling component is in working condition. At this point, the cylinder can be activated for movement. When the cylinder extends out and contacts the ball, it can push the ball out of the chute and slide between the silicon wafer and the mask plate, thereby achieving passive leveling between the silicon wafer and the mask plate.

应注意,虽然本发明中描述了控制件包括簧片、限位件和气缸的特定结构,但本发明不限于此。在实际实现中,本领域技术人员也可以用其他机械结构来实现控制件。例如,控制件可以是容纳小球的封闭容器。当不需要对硅片和掩模板进行调平时,小球可以置于封闭容器内。当需要对硅片和掩模板进行调平时,可以将小球释放(例如,弹出、推出等等)至封闭容器外部并滑动至硅片与掩模板之间。It should be noted that although the present invention describes a specific structure of the control member including a reed, a limiting member and a cylinder, the present invention is not limited thereto. In actual implementation, those skilled in the art can also use other mechanical structures to implement the control component. For example, the control member may be a closed container containing pellets. When leveling of the wafer and mask is not required, the pellets can be placed in a closed container. When the wafer and mask need to be leveled, the ball can be released (e.g., popped, pushed out, etc.) to the outside of the closed container and slid between the wafer and mask.

图3示出了本发明的调平组件中的簧片的示意图。Figure 3 shows a schematic diagram of the reed in the leveling assembly of the present invention.

在本发明的优选实施例中,簧片的厚度为0.09mm至0.12mm。In a preferred embodiment of the present invention, the thickness of the reed is 0.09mm to 0.12mm.

如图所示,簧片的一端设置有固定孔。当调平组件处于不工作状态时,小球可以粘接于该固定孔内,以使得小球在没有外力作用下不会滑动离开簧片。当调平组件处于工作状态时,可以(例如,由气缸)驱动小球离开该固定孔并滑动离开簧片前往硅片与掩模板之间的位置。As shown in the figure, one end of the reed is provided with a fixing hole. When the leveling assembly is in an inoperative state, the small ball can be bonded in the fixing hole, so that the small ball will not slide away from the spring plate without external force. When the leveling assembly is in working condition, the ball can be driven (for example, by a cylinder) to leave the fixing hole and slide away from the spring to a position between the silicon wafer and the mask plate.

如图3进一步所示,簧片的另一端(与固定孔所在端相对的另一端)设置有连接孔。作为示例,图3中示出了三个连接孔。通过螺钉和连接孔,可以将簧片固定于调平组件中的限位件上。As further shown in Figure 3, the other end of the reed (the other end opposite to the end where the fixing hole is located) is provided with a connecting hole. As an example, three connection holes are shown in Figure 3 . The reed can be fixed to the stopper in the leveling assembly through screws and connecting holes.

图4示出了本发明的调平组件中的限位件的示意图。Figure 4 shows a schematic diagram of the stopper in the leveling assembly of the present invention.

如图所示,限位件为T型件。As shown in the figure, the limiting piece is a T-shaped piece.

簧片可以固定连接至限位件顶部的簧片固定孔。举例而言,可以通过将簧片的两侧连接孔与限位件顶部的簧片固定孔对准,并通过螺钉来将两者紧固连接。The reed can be fixedly connected to the reed fixing hole on the top of the stopper. For example, the connecting holes on both sides of the reed can be aligned with the reed fixing holes on the top of the stopper, and the two can be tightly connected through screws.

此外,限位件上还设置有气缸固定槽和气缸固定孔,气缸的连接杆固定在气缸固定槽中,通过螺钉和气缸固定孔将气缸的连接杆锁紧。In addition, the limiter is also provided with a cylinder fixing groove and a cylinder fixing hole. The connecting rod of the cylinder is fixed in the cylinder fixing groove, and the connecting rod of the cylinder is locked through the screw and the cylinder fixing hole.

应注意,图3和图4中示出的簧片和限位件的结构以及两者的紧固方式仅是示例性的而非限制性的。在具体实现中,簧片和限位件可以采用不同的机械结构以及不同的方式进行紧固连接。It should be noted that the structures of the spring leaf and the limiting piece and the fastening manner of the two shown in Figures 3 and 4 are only exemplary and not restrictive. In specific implementations, the spring leaf and the limiting member can be fastened using different mechanical structures and different methods.

图5示出了利用本发明的调平辅助装置进行被动调平的示例方法500。Figure 5 illustrates an example method 500 for passive leveling utilizing the leveling aid of the present invention.

如图所示,方法500开始于步骤505。在步骤505,将掩模板吸附在掩模板吸附台上。As shown, method 500 begins at step 505. In step 505, the mask plate is adsorbed on the mask plate adsorption stage.

例如,可以在掩模板吸附台上设置吸附件(诸如吸附槽或吸附孔),并通过这些吸附件来吸附掩模板。For example, adsorption parts (such as adsorption grooves or adsorption holes) may be provided on the mask plate adsorption stage, and the mask plate may be adsorbed through these adsorption parts.

接着,在步骤510,使硅片通过掩模板吸附台的通孔从掩模板吸附台下方上升。Next, in step 510, the silicon wafer is raised from below the mask plate adsorption platform through the through hole of the mask plate adsorption platform.

举例而言,可以将硅片置于能够进行上下运动的平台上,且该平台的尺寸小于通孔,从而使得平台能够在通孔内上下移动。在将硅片置于平台上之后,当驱动平台上升时,硅片会随平台一起上升。For example, the silicon wafer can be placed on a platform that can move up and down, and the size of the platform is smaller than the through hole, so that the platform can move up and down within the through hole. After the silicon wafer is placed on the platform, when the driving platform is raised, the silicon wafer will rise with the platform.

平台与通孔之间具有一定的间隙,以使得平台能够在通孔内上下运动。同时,该间隙应当足够小(例如,小于小球的直径),以免小球掉落至间隙中。There is a certain gap between the platform and the through hole, so that the platform can move up and down in the through hole. At the same time, the gap should be small enough (e.g., smaller than the diameter of the ball) so that the ball does not fall into the gap.

在步骤515,当硅片上升到与掩模板吸附台的距离满足预设条件时,通过每个调平组件的控制件控制相应小球滑动至掩模板与硅片之间。In step 515, when the distance between the silicon wafer and the mask plate adsorption stage meets the preset condition, the control member of each leveling component controls the corresponding small ball to slide between the mask plate and the silicon wafer.

在具体实现中,可以根据实际情况设置不同的预设条件。In specific implementation, different preset conditions can be set according to the actual situation.

例如,在一些示例中,当硅片与掩模板吸附台的距离等于预设值时,可以认为距离满足预设条件。预设值可以是大于小球直径的某个特定值。For example, in some examples, when the distance between the silicon wafer and the mask adsorption stage is equal to a preset value, the distance can be considered to meet the preset condition. The preset value can be a specific value larger than the diameter of the ball.

在另外一些示例中,当硅片与掩模板吸附台的距离处于某个预设范围时,可以认为距离满足预设条件。预设范围的下限值可以是大于小球直径的某个特定值,预设范围的上限值可以是下限值加上某个增量值。In other examples, when the distance between the silicon wafer and the mask adsorption stage is within a certain preset range, the distance can be considered to meet the preset conditions. The lower limit of the preset range can be a specific value greater than the diameter of the ball, and the upper limit of the preset range can be the lower limit plus a certain increment value.

在本公开的实施例中,当硅片与掩模板吸附台的距离满足预设条件时,可以暂停平台的上升运动,并激活控制件中气缸以进行运动,通过气缸运动将小球推离簧片上的固定孔,并滑动至掩模板与硅片之间。此时,小球的底部抵接硅片的上表面,而小球的顶部与掩模板不接触。In embodiments of the present disclosure, when the distance between the silicon wafer and the mask adsorption platform meets the preset condition, the upward movement of the platform can be suspended, and the cylinder in the control part can be activated to move, and the ball can be pushed away from the spring through the cylinder movement. fixing holes on the chip and slide between the mask and the silicon wafer. At this time, the bottom of the ball is in contact with the upper surface of the silicon wafer, while the top of the ball is not in contact with the mask.

在步骤520,使硅片继续上升直至每个小球的顶部抵接掩模板并且底部抵接硅片。In step 520, the silicon wafer continues to rise until the top of each ball contacts the mask and the bottom contacts the silicon wafer.

在小球滑动至掩模板与硅片之间后,可以恢复平台的上升运动,以使得硅片随平台继续上升。当硅片上升直至三个小球的顶部抵接掩模板且底部抵接硅片时,停止平台和硅片的继续上升。After the ball slides between the mask and the silicon wafer, the upward movement of the platform can be resumed, so that the silicon wafer continues to rise with the platform. When the silicon wafer rises until the tops of the three balls touch the mask and the bottoms touch the silicon wafer, the platform and the silicon wafer are stopped from continuing to rise.

此时,由于小球直径相同,因此掩模板与硅片之间的距离等于小球直径。同时,由于不共线的三点确定一个平面,因此通过不共线的三个小球可以使硅片和掩模板相互平行,从而实现两者之间的被动调平。At this time, since the diameter of the small balls is the same, the distance between the mask and the silicon wafer is equal to the diameter of the small balls. At the same time, since the three non-collinear points determine a plane, the silicon wafer and the mask can be made parallel to each other through the three non-collinear balls, thereby achieving passive leveling between the two.

在具体实现中,由于气缸驱动力的差异、掩模板与硅片之间的未调平状态(不平行)、小球初始位置、各个小球在滑动过程中的交互(诸如碰撞)等因素的影响,三个小球在硅片上滑动后最终位置共线的可能性极低。由此,在对调平精度要求不太高的情况下,可以始终认为三个小球的最终位置不共线。In the specific implementation, due to factors such as the difference in cylinder driving force, the unlevelled state (non-parallel) between the mask plate and the silicon wafer, the initial position of the balls, the interaction of each ball during the sliding process (such as collision), etc. Influence, the possibility that the final positions of the three small balls will be collinear after sliding on the silicon wafer is extremely low. Therefore, when the requirements for leveling accuracy are not too high, it can always be considered that the final positions of the three balls are not collinear.

在另外一些实现中,为了提高调平精度,可以初始地使用三个小球进行调平,当检测到三个小球的最终位置共线时,可以添加另一附加小球并使其滑动至硅片和掩模板之间参与调平。In other implementations, in order to improve the leveling accuracy, three small balls can be initially used for leveling. When the final positions of the three small balls are detected to be collinear, another additional small ball can be added and slid to Participate in leveling between the silicon wafer and the mask.

在又一些实现中,当检测到三个小球的最终位置共线时,可以加入一定的外部机械扰动(诸如倾斜、振动、碰撞等等)以破坏小球位置之间的共线关系,从而确保三个小球的最终位置不共线。In some implementations, when it is detected that the final positions of the three balls are collinear, certain external mechanical disturbances (such as tilt, vibration, collision, etc.) can be added to destroy the collinear relationship between the ball positions, thereby Make sure that the final positions of the three balls are not collinear.

为了更好地理解本发明,以下结合图6-图8进一步解说利用本发明的调平辅助装置进行被动调平时小球滑动的示例性过程。In order to better understand the present invention, an exemplary process of ball sliding during passive leveling using the leveling auxiliary device of the present invention is further explained below with reference to FIGS. 6-8 .

为了便于解说,假设采用沿圆形通孔均匀分布的三个滑槽和三个小球(分别被表示为小球A、小球B和小球C),三个小球不共线,且每个小球的直径均为d。For the convenience of explanation, assume that three chutes and three small balls (denoted as small ball A, small ball B and small ball C respectively) evenly distributed along the circular through hole are used. The three small balls are not collinear, and The diameter of each ball is d.

在一些实现中,小球的直径d可以为2 mm。In some implementations, the diameter d of the ball may be 2 mm.

在一些实现中,小球可以是陶瓷小球。In some implementations, the balls may be ceramic balls.

在一些实现中,小球可以是金属小球。In some implementations, the balls may be metal balls.

图6示出了调平过程中小球滑动离开滑槽并滑动至掩模板与硅片之间后的示意图。Figure 6 shows a schematic diagram after the ball slides out of the chute and slides between the mask plate and the silicon wafer during the leveling process.

如图所示,小球A、小球B和小球C均位于圆形通孔内的硅片上。此时,每个小球的底部抵接硅片的上表面,而每个小球的顶部与掩模板(图6中未示出)未接触。As shown in the figure, ball A, ball B and ball C are all located on the silicon wafer inside the circular through hole. At this time, the bottom of each small ball is in contact with the upper surface of the silicon wafer, while the top of each small ball is not in contact with the mask (not shown in Figure 6).

在本发明的各实施例中,对各个小球在硅片上的具体位置没有严格要求。即,不需要小球位于硅片上的指定位置。In various embodiments of the present invention, there are no strict requirements on the specific position of each small ball on the silicon wafer. That is, the ball does not need to be located at a specific location on the silicon wafer.

如图6中所示,小球A、小球B和小球C位于硅片上的三个不同位置,且这三个位置不共线。由于不共线的三点确定一个平面,因此通过三个小球可以使硅片和掩模板相互平行,从而实现两者之间的被动调平。As shown in Figure 6, ball A, ball B and ball C are located at three different positions on the silicon wafer, and these three positions are not collinear. Since three non-collinear points determine a plane, the silicon wafer and mask can be made parallel to each other through three small balls, thereby achieving passive leveling between the two.

作为示例,图7示出了调平过程中小球滑动至掩模板与硅片之间后的系统侧视图。As an example, FIG. 7 shows a side view of the system after the ball slides between the mask and the silicon wafer during the leveling process.

假设在调平过程中的某个时刻,硅片和掩模板之间尚未调平。此时,硅片与掩模板之间的间隙在不同位置是不同的。如图7所示,硅片与掩模板之间的最大间隙为H1(如图中左侧所示),并且硅片与掩模板之间的最小间隙为H2(图中右侧所示)。Assume that at some point during the leveling process, the silicon wafer and mask have not yet been leveled. At this time, the gap between the silicon wafer and the mask plate is different at different positions. As shown in Figure 7, the maximum gap between the silicon wafer and the mask is H1 (shown on the left side of the figure), and the minimum gap between the silicon wafer and the mask is H2 (shown on the right side of the figure).

在图7的示例中,H1大于H2,并且H2大于小球的直径d。由此可见,此时硅片与掩模板之间不平行。在图7中,各个小球与掩模板之间的距离不同。具体而言,小球A与掩模板的距离最大,小球C与掩模板的距离最小。In the example of Figure 7, H1 is larger than H2, and H2 is larger than the diameter d of the ball. It can be seen that the silicon wafer and the mask are not parallel at this time. In Figure 7, the distance between each ball and the mask is different. Specifically, the distance between ball A and the mask plate is the largest, and the distance between ball C and the mask plate is the smallest.

图8示出了调平过程结束后的系统侧视图。Figure 8 shows a side view of the system after the leveling process.

当图7中所示的硅片继续上升后,承载硅片的载台底部是柔性机构,具备Z向、俯仰的自由度,当第一个小球先与掩模板和硅片接触并受力后,承载硅片的载台继续上升,由于第一个小球、掩模板、载台三者已接触,载台会做俯仰运动,其余小球与掩模板和硅片的距离会缩小。最终会使得所有小球的顶部抵接掩模板、底部抵接硅片,如图8中所示。具体而言,小球A、小球B和小球C的顶部均抵接掩模板下表面,并且小球A、小球B和小球C的底部均抵接硅片上表面。When the silicon wafer continues to rise as shown in Figure 7, the bottom of the stage carrying the silicon wafer is a flexible mechanism with degrees of freedom in the Z direction and pitch. When the first small ball first contacts the mask and the silicon wafer and receives force Afterwards, the stage carrying the silicon wafer continues to rise. Since the first ball, the mask plate, and the stage are in contact, the stage will perform a pitching motion, and the distance between the remaining balls, the mask plate, and the silicon wafer will decrease. Eventually, the tops of all the balls will be in contact with the mask and the bottoms will be in contact with the silicon wafer, as shown in Figure 8. Specifically, the tops of small balls A, small balls B and small balls C all contact the lower surface of the mask, and the bottoms of small balls A, small balls B and small balls C all contact the upper surface of the silicon wafer.

此时,由于小球A、小球B和小球C的直径相等(均等于d),因此当每个小球都与掩模板和硅片抵接之后,掩模板和硅片之间的间隔在各个位置均相等并且等于小球直径d。At this time, since the diameters of small ball A, small ball B and small ball C are equal (all equal to d), when each small ball contacts the mask plate and the silicon wafer, the distance between the mask plate and the silicon wafer will are equal at all positions and equal to the diameter of the ball d.

如前文所述,不共线的三点确定一个平面。因此,当不共线的小球A、小球B和小球C抵接在掩模板和硅片之间时,可以使硅片和掩模板相互平行,从而实现两者之间的被动调平。As mentioned earlier, three non-collinear points define a plane. Therefore, when the non-collinear balls A, B and C are in contact between the mask plate and the silicon wafer, the silicon wafer and the mask plate can be made parallel to each other, thereby achieving passive leveling between them. .

应注意,虽然图6-图8示出了调平组件包括三个小球,但本发明不限于此。在实际实现中,可以采用三个以上小球(诸如四个小球、五个小球等等),由此提高小球位置不共线的可能性。另外,为了提高调平可靠性,可以定期检查小球的直径,以确保各个小球的直径保持相同。如果发现有小球的直径缩小(例如,由于磨损),则可以及时更换小球。It should be noted that although FIGS. 6-8 illustrate that the leveling assembly includes three small balls, the present invention is not limited thereto. In actual implementation, more than three small balls (such as four small balls, five small balls, etc.) can be used, thereby increasing the possibility that the positions of the small balls are not collinear. In addition, in order to improve the reliability of leveling, the diameter of the balls can be checked regularly to ensure that the diameter of each ball remains the same. If it is found that the diameter of the ball has decreased (for example, due to wear), the ball can be replaced in time.

本发明的调平辅助装置在硅片和掩模板之间设置至少三个直径相同的小球,当硅片上升到一定高度后小球的顶部抵接掩模板且底部抵接硅片,从而实现硅片与掩模板之间的被动调平。本发明的技术方案能够快速实现硅片与掩模板之间的被动调平,且结构简单、成本低。The leveling auxiliary device of the present invention arranges at least three small balls with the same diameter between the silicon wafer and the mask plate. When the silicon wafer rises to a certain height, the tops of the small balls contact the mask plate and the bottoms contact the silicon wafer, thereby achieving Passive leveling between wafer and mask. The technical solution of the present invention can quickly realize passive leveling between the silicon wafer and the mask plate, and has a simple structure and low cost.

以上结合附图阐述的详细说明描述了示例而不代表可被实现或者落在权利要求的范围内的所有示例。术语“示例”和“示例性”在本说明书中使用时意指“用作示例、实例或解说”,并不意指“优于或胜过其它示例”。The detailed description set forth above in connection with the appended drawings describes examples and does not represent all examples that may be implemented or that fall within the scope of the claims. The terms "example" and "exemplary" when used in this specification mean "serving as an example, instance, or illustration" and do not mean "better or superior to other examples."

贯穿本说明书引述的“一个实施例”或“一实施例”意指结合该实施例描述的特定特征、结构或特性是包含在本发明的至少一个实施例中的。因此,这些短语的使用可以不仅仅指代一个实施例。此外,所描述的特征,结构或特性可以在一个或多个实施例中以任何合适的方式组合。Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Therefore, use of these phrases may refer to more than one embodiment. Furthermore, the described features, structures or characteristics may be combined in any suitable manner in one or more embodiments.

提供之前的描述是为了使本领域任何技术人员均能够实践本文中所描述的各种方面。对这些方面的各种修改将容易为本领域技术人员所明白,并且在本文中所定义的普适原理可被应用于其它方面。因此,权利要求并非旨在被限定于本文中所示的方面,而是应被授予与语言上的权利要求相一致的全部范围,其中对要素的单数形式的引述除非特别声明,否则并非旨在表示“有且仅有一个”,而是“一个或多个”。除非特别另外声明,否则术语“一些”指的是一个或多个。本发明通篇描述的各个方面的要素为本领域普通技术人员当前或今后所知的所有结构上和功能上的等效方案通过引述被明确纳入于此,且旨在被权利要求所涵盖。The previous description is provided to enable any person skilled in the art to practice the various aspects described herein. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects. Accordingly, the claims are not intended to be limited to the aspects shown herein, but are to be accorded the full scope consistent with the language of the claims, wherein reference to the singular form of an element is not intended to be limited unless expressly stated otherwise. It means "there is and only one", but "one or more". Unless specifically stated otherwise, the term "some" refers to one or more. All structural and functional equivalents to the elements of the various aspects described throughout this invention that are now or hereafter known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be covered by the claims.

还应注意,这些实施例可能是作为被描绘为流程图、流图、结构图、或框图的过程来描述的。尽管流程图可能会把诸操作描述为顺序过程,但是这些操作中有许多操作能够并行或并发地执行。另外,这些操作的次序可被重新安排。It should also be noted that these embodiments may be described as processes depicted as flowcharts, flowcharts, structural diagrams, or block diagrams. Although a flowchart may describe operations as a sequential process, many of these operations can be performed in parallel or concurrently. Additionally, the order of these operations can be rearranged.

虽然已经说明和描述了各种实施例,但是应该理解,实施例不限于上述精确配置和组件。可以在本文公开的设备的布置、操作和细节上作出对本领域技术人员显而易见的各种修改、替换和改进而不脱离权利要求的范围。While various embodiments have been illustrated and described, it is to be understood that the embodiments are not limited to the precise configurations and components described above. Various modifications, substitutions and improvements apparent to those skilled in the art may be made in the arrangement, operation and details of the apparatus disclosed herein without departing from the scope of the claims.

Claims (10)

1. A leveling assistance device comprising:
a mask plate adsorption table for adsorbing a mask plate, the center of the mask plate adsorption table being provided with a through hole and a plurality of sliding grooves being arranged along the circumference of the through hole, wherein a silicon wafer can rise from below the mask plate adsorption table through the through hole, and the number of the plurality of sliding grooves is 3 or more; and
a plurality of leveling assemblies, each leveling assembly disposed in one of the plurality of runners, wherein each leveling assembly includes a ball and a control member, and the diameters of the balls in each leveling assembly are the same,
the control piece of each leveling assembly can control the corresponding small ball to slide between the mask plate and the silicon wafer.
2. The leveling assistance apparatus of claim 1, wherein the through hole is a circular through hole, and a diameter of the circular through hole is larger than the silicon wafer.
3. The leveling aid of claim 1, wherein the control member of each leveling assembly comprises a reed, a stop, and a cylinder.
4. A leveling aid as claimed in claim 3, wherein one end of the reed of each leveling assembly is provided with a fixing hole, a ball is adhered in the fixing hole, the other end of the reed is provided with a connecting hole, and the reed is fixed to a stopper by a screw and the connecting hole, the stopper is provided with a cylinder fixing groove and a cylinder fixing hole, and a connecting rod of a cylinder is fixed in the cylinder fixing groove and locked by the screw and the cylinder fixing hole.
5. The leveling aid as recited in claim 4 wherein the control member of each leveling assembly pushes the ball out of the fixed aperture to slide between the mask plate and the silicon wafer by movement of the air cylinder.
6. A levelling assistance device according to claim 3 wherein the reed has a thickness of between 0.09mm and 0.12mm.
7. The leveling aid of claim 1, wherein the material of the ball comprises ceramic or metal.
8. The leveling assistance apparatus of claim 1, wherein the plurality of runners are evenly distributed along the through hole.
9. The leveling assistance apparatus as set forth in claim 1, wherein the mask plate suction table sucks the mask plate through a suction groove or suction hole.
10. A method of passive levelling using a levelling assistance device as claimed in any one of claims 1 to 9, comprising:
adsorbing the mask plate on a mask plate adsorption table;
enabling the silicon wafer to rise from the lower part of the mask plate adsorption table through the through hole of the mask plate adsorption table;
when the distance between the silicon wafer and the mask plate adsorption table reaches a preset condition, controlling the corresponding pellets to slide between the mask plate and the silicon wafer through the control piece of each leveling assembly; and
the silicon wafer is continuously lifted until the top of each small ball is abutted against the mask plate and the bottom is abutted against the silicon wafer.
CN202410058538.1A 2024-01-16 2024-01-16 Leveling auxiliary device and leveling method Pending CN117572732A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1286793A (en) * 1969-05-05 1972-08-23 Elektromat Veb Process and apparatus for the parallel alignment of a semi-conductor wafer relative to a mask
KR101212244B1 (en) * 2012-10-15 2012-12-13 마이다스시스템주식회사 Stage leveling device for mask aligner with simplified structure
CN104570622A (en) * 2015-02-10 2015-04-29 中国科学院光电技术研究所 Proximity type gap exposure workpiece table of photoetching machine
CN209496818U (en) * 2018-02-22 2019-10-15 爱立发株式会社 Solder ball mounting device
CN110837211A (en) * 2019-10-15 2020-02-25 大族激光科技产业集团股份有限公司 Leveling device for proximity lithography machine
CN117369223A (en) * 2023-12-08 2024-01-09 上海隐冠半导体技术有限公司 Leveling device and photoetching machine

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1286793A (en) * 1969-05-05 1972-08-23 Elektromat Veb Process and apparatus for the parallel alignment of a semi-conductor wafer relative to a mask
KR101212244B1 (en) * 2012-10-15 2012-12-13 마이다스시스템주식회사 Stage leveling device for mask aligner with simplified structure
CN104570622A (en) * 2015-02-10 2015-04-29 中国科学院光电技术研究所 Proximity type gap exposure workpiece table of photoetching machine
CN209496818U (en) * 2018-02-22 2019-10-15 爱立发株式会社 Solder ball mounting device
CN110837211A (en) * 2019-10-15 2020-02-25 大族激光科技产业集团股份有限公司 Leveling device for proximity lithography machine
CN117369223A (en) * 2023-12-08 2024-01-09 上海隐冠半导体技术有限公司 Leveling device and photoetching machine

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