CN117518718A - Photoresist composition and preparation method of driving substrate - Google Patents
Photoresist composition and preparation method of driving substrate Download PDFInfo
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- CN117518718A CN117518718A CN202310919807.4A CN202310919807A CN117518718A CN 117518718 A CN117518718 A CN 117518718A CN 202310919807 A CN202310919807 A CN 202310919807A CN 117518718 A CN117518718 A CN 117518718A
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- Prior art keywords
- photoresist composition
- patterned
- photoresist
- mass percentage
- photoacid generator
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Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 91
- 239000000203 mixture Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 19
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 11
- 150000003624 transition metals Chemical class 0.000 claims abstract description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 9
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 9
- 150000002148 esters Chemical group 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 20
- -1 polymethylphenylsiloxane Polymers 0.000 claims description 14
- 150000002736 metal compounds Chemical class 0.000 claims description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical group [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- KFTDXHBDGMLDNR-UHFFFAOYSA-N 2-hydroxyisoindole-1,3-dione;4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.C1=CC=C2C(=O)N(O)C(=O)C2=C1 KFTDXHBDGMLDNR-UHFFFAOYSA-N 0.000 claims description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 4
- SHYSGNUFEBPFDR-UHFFFAOYSA-N 4-hydroxy-4-azatricyclo[5.2.1.02,6]dec-8-ene-3,5-dione 4-methylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1.C1=CC2CC1C1C2C(=O)N(O)C1=O SHYSGNUFEBPFDR-UHFFFAOYSA-N 0.000 claims description 4
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 claims description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 3
- QTKPMCIBUROOGY-UHFFFAOYSA-N 2,2,2-trifluoroethyl 2-methylprop-2-enoate Chemical group CC(=C)C(=O)OCC(F)(F)F QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical group COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 claims description 3
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical group CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 claims description 3
- 239000003208 petroleum Substances 0.000 claims description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 3
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 claims description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000016 photochemical curing Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- 125000000962 organic group Chemical group 0.000 description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 125000006267 biphenyl group Chemical group 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 2
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- IXAUCVOJRVFRBJ-UHFFFAOYSA-N 4-(trichloromethyl)triazine Chemical compound ClC(Cl)(Cl)C1=CC=NN=N1 IXAUCVOJRVFRBJ-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- XQBQVMYWVQLMHW-UHFFFAOYSA-N [dinitro(phenyl)methyl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC([N+]([O-])=O)([N+]([O-])=O)C1=CC=CC=C1 XQBQVMYWVQLMHW-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-O diphenylsulfanium Chemical compound C=1C=CC=CC=1[SH+]C1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-O 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application discloses a photoresist composition and a preparation method of a driving substrate. The photoresist composition includes a photoacid generator, a photocurable resin, an organometallic compound, and a solvent. Wherein the organometallic compound is represented by the following general formula (1). In formula (1), M is independently selected from transition metals; the end groups of R are independently selected from vinyl, ester or trifluoro groups. The application improves the absorption performance of the photoresist composition for exposing light, thereby improving the resolution of patterns prepared by using the photoresist composition.
Description
Technical Field
The application relates to the technical field of display, in particular to a photoresist composition and a preparation method of a driving substrate.
Background
Photoresists are also known as photoresists. The photoresist has photochemical sensitivity, and the required micro pattern is transferred from the template to the substrate to be processed through the processes of exposure, development and the like by utilizing photochemical reaction, and then the processing of etching, diffusion, ion implantation and the like is carried out. The photoresist can be divided into negative photoresist and positive photoresist according to different imaging mechanisms, the positive photoresist is prepared by decomposing the photoresist of an illumination part under the irradiation of light with a certain wavelength, the solubility is increased, the solubility difference between the exposed part and the unexposed part is increased, the soluble part of the exposure can be removed by using a proper developer, and finally, an image consistent with a mask is formed on the processed surface.
However, the existing positive photoresist has weaker absorption performance on exposure light by the photosensitizer, so that the dissolution rate of the exposed positive photoresist in the developing solution is lower, and when the positive photoresist is applied to a photoetching process, particularly a glass substrate process, a fine image cannot be marked, and a pixel pattern with higher resolution cannot be prepared.
Disclosure of Invention
The embodiment of the application provides a photoresist composition and a preparation method of a driving substrate, so as to improve the absorption performance of positive photoresist in the prior art on exposure light, thereby improving the resolution of a pattern prepared by using the photoresist composition.
In order to solve the above technical problems, embodiments of the present application provide a photoresist composition, which includes a photoacid generator, a photocurable resin, an organometallic compound, and a solvent; the organometallic compound is represented by the following general formula (1):
wherein, in formula (1), M is independently selected from transition metals; the end groups of R are independently selected from vinyl, ester or trifluoro groups.
Alternatively, in some embodiments of the present application, M is selected from Zn, ti, mn, ce, fe, co, cu or Ni.
Alternatively, in some embodiments of the present application, R is selected from acrylate, allyl, trifluoroacetate, or trifluoroethyl.
Alternatively, in some embodiments of the present application, R is selected from methyl methacrylate, ethyl methacrylate, trifluoroacetate, or trifluoroethyl methacrylate.
Alternatively, in some embodiments of the present application, M is selected from Zn, ti, mn, ce, fe, co, cu or Ni; r is selected from acrylate groups.
In some embodiments of the present application, optionally, the composition, in weight percent,
the mass percentage of the photoacid generator is 1% -5%;
the mass percentage of the photo-curing resin is 5% -20%;
the mass percentage of the organic metal compound is 3% -10%;
the mass percentage of the solvent is 70% -90%.
Optionally, in some embodiments of the present application, the photoacid generator is selected from at least one of N-hydroxyphthalimide p-toluenesulfonate, N-hydroxy-5-norbornene-2, 3-dicarboximide p-toluenesulfonate, and N-hydroxy-3, 6-endo-4-cyclohexene dicarboximide p-toluenesulfonate; and/or
The photo-curable resin is selected from acrylic resins; and/or
The solvent is at least one selected from polyethylene glycol monomethyl ether monomethacrylate, methyl isobutyl ketone, N-methyl pyrrolidone, ethylene glycol monomethyl ether, propylene glycol methyl ether acetate, petroleum ether and N-heptane.
Optionally, in some embodiments of the present application, the photoresist composition further comprises an additive selected from at least one of hexamethyldisilazane, gamma-glycidoxypropyl trimethoxysilane, gamma-aminopropyl triethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris (beta-methoxyethoxy) silane, polymethylphenylsiloxane, and polydimethylsiloxane; and/or
The mass percentage of the additive is 0.5% -2%.
Optionally, in some embodiments of the present application, the photoresist composition is used in a yellow light process using deep ultraviolet light or extreme ultraviolet light as exposure light.
The embodiment of the application also provides a preparation method of the driving substrate, which comprises the following steps:
providing a glass substrate;
forming a film layer to be patterned on the glass substrate;
a photoresist composition according to any one of the preceding claims is coated on the film layer to be patterned to form a photoresist layer.
Exposing and developing the photoresist layer in sequence to form a patterned photoresist layer;
etching the film to be patterned by taking the patterned photoresist layer as a mask so as to form a patterned film;
and stripping the patterned photoresist layer.
Compared with the photoresist composition in the prior art, the photoresist composition provided by the embodiment of the application has the advantages that the organic metal compound represented by the general formula (1) is introduced, the transition metal and the organic group R with the end group selected from vinyl, ester or trifluoro are simultaneously introduced into the organic metal compound, and the organic metal compound has the advantages of an organic material and an inorganic material by utilizing the combination of the transition metal and the organic group R, so that the photosensitivity of the photoresist composition can be improved, and the absorption performance of the photoresist composition on exposure light is improved. When the photoresist composition is applied to a glass process, such as a yellow light process of a glass-based back plate, patterning accuracy and pattern resolution of the glass-based back plate can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a driving substrate according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and explanation only and is not intended to limit the present application. In this application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
Embodiments provide a photoresist composition including a photoacid generator, a photocurable resin, an organometallic compound, and a solvent. Wherein the organometallic compound is represented by the following general formula (1):
in formula (1), M is independently selected from transition metals; the end groups of R are independently selected from vinyl, ester or trifluoro groups.
According to the embodiment of the application, the organic metal compound represented by the general formula (1) is introduced into the photoresist composition, and the transition metal and the organic group R of which the end group is selected from vinyl, ester or trifluoro are simultaneously introduced into the organic metal compound, so that the organic metal compound has the advantages of an organic material and an inorganic material by utilizing the combination of the transition metal and the organic group R, the photosensitive performance of the organic metal compound can be further improved, and the absorption performance of the photoresist composition on exposure light is improved. When the photoresist composition is applied to a glass process, such as a yellow light process of a glass-based back plate, patterning accuracy and pattern resolution of the glass-based back plate can be improved.
The photoresist composition provided herein is described in detail by way of specific examples.
In the present application, the photoresist composition includes a photoacid generator, a photocurable resin, an organometallic compound, and a solvent.
In some embodiments, the photoresist composition may be suitable for a yellow light process using deep ultraviolet light or extreme ultraviolet light as an exposure light. Wherein the extreme ultraviolet light may be a KrF excimer laser beam having a wavelength of 248nm and an ArF excimer laser beam having a wavelength of 193 nm.
In the present application, the photoacid generator may generate an acid in response to light (e.g., deep ultraviolet light and extreme ultraviolet light). In some embodiments, the photoacid generator may include an onium salt, an aromatic diazonium salt, a sulfonium salt, a triarylsulfonium salt, a diaryl sulfonium salt, a monoaryl sulfonium salt, an iodonium salt, a diaryl iodonium salt, a nitrobenzyl ester, a disulfone, a diazodisulfone, a sulfonate, a trichloromethyl triazine, or a combination thereof.
In some embodiments, the photoacid generator may include N-hydroxyphthalimide p-toluenesulfonate, N-hydroxy-5-norbornene-2, 3-dicarboximide p-toluenesulfonate, N-hydroxy-3, 6-endo-4-cyclohexene dicarboximide p-toluenesulfonate, phthalimido-trifluoromethanesulfonate, dinitrobenzyl tosylate, N-decyl disulfonate, naphthalimido-trifluoromethanesulfonate, diphenyl iodohexafluorophosphate, diphenyl iodohexafluoroarsonate, diphenyl iodohexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-tolyl triflate, diphenyl naphtyl triflate diphenylsulfonium, or a combination thereof.
Preferably, in some embodiments, the photoacid generator may include at least one of N-hydroxyphthalimide p-toluenesulfonate, N-hydroxy-5-norbornene-2, 3-dicarboximide p-toluenesulfonate, N-hydroxy-3, 6-endo-oxo-4-cyclohexene dicarboximide p-toluenesulfonate.
In some embodiments of the present application, the photoacid generator in the photoresist composition may be 1-5% by mass. It is understood that if the content of the photoacid generator is too low, the light absorbability is lowered, and if the content of the photoacid generator is too high, the energy is excessively absorbed. Within the above setting range, it is possible to avoid excessive absorption of energy while ensuring good absorption performance of the photoacid generator for light. In some embodiments, the photoacid generator may be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, or 5% by mass.
In the present application, the photocurable resin may be a polymer that causes or undergoes a photochemical reaction in response to light (e.g., deep ultraviolet light and extreme ultraviolet light). For example, the photocurable resin may be a resin for KrF excimer laser beam and/or a resin for ArF excimer laser beam. In some embodiments, the photocurable resin may include repeating units or polymers of acrylates, methacrylates, acrylic acid, methacrylic acid, vinyl esters, vinyl ethers, vinyl alcohols, vinyl halides, olefins, cyclic olefins, styrene, norbornene, polyesters, polyamides, polycarbonates, maleic anhydride, unsaturated anhydrides, and the like.
It will be appreciated that the photocurable resin may be removed during the exposure process by chemical reaction with the acid generated by the photoacid generator, thereby allowing the light-exposed portions of the photoresist composition to be readily dissolved in a developer solution after film formation.
Preferably, in some embodiments, the photocurable resin is an acrylate, which may include pentaerythritol triacrylate (PETA) and/or dipentaerythritol hexaacrylate (DPHA), for example.
In the present application, the content of the photocurable resin may be adjusted based on the viscosity of the photoresist composition, coatability of the film formation, quality of the pattern, and the like. In some embodiments of the present application, the photocurable resin is present in an amount of 5% to 20% by weight. In some embodiments, the mass percent of the photocurable resin may be 5%, 6%, 8%, 10%, 12%, 15%, 18%, or 20%.
In this application, the organometallic compounds are used as sensitizers in photoresist compositions. Wherein the organometallic compound is represented by the following general formula (1):
in some embodiments, in formula (1), M is independently selected from transition metals; the end groups of R are independently selected from vinyl, ester or trifluoro groups.
The introduction of the organometallic compound can increase the photosensitivity of the photoresist composition and improve the absorption performance of the photoresist composition to exposure light such as deep ultraviolet light or extreme ultraviolet light in the yellow light process of the glass-based back plate. Specifically, in the patterning process of the glass-based back plate, after the evaporation of the photoresist composition is completed, when the photoresist composition is irradiated by exposure light, the photosensitivity of the photoresist composition and the absorptivity of the photoresist composition to the exposure light can be improved, so that the resolution of the prepared pattern can be improved, and the fine preparation of the glass-based back plate can be realized.
In some embodiments, M is selected from Zn, ti, mn, ce, fe, co, cu or Ni. Preferably, in some embodiments, M is selected from Zn, ti or Mn.
In some embodiments, R is selected from acrylate, allyl, trifluoroacetate, or trifluoroethyl. The selection of the above groups can improve the light absorption performance of the photoresist composition and also improve the processability, etching resistance and chemical stability of the photoresist composition.
Preferably, in some embodiments, R is selected from methyl methacrylate, ethyl methacrylate, allyl, trifluoroacetate, or trifluoroethyl methacrylate.
Preferably, in some embodiments, in formula (1), M is selected from Zn, ti, mn, ce, fe, co, cu or Ni; r is selected from acrylate groups.
In some embodiments of the present application, the organometallic compound is present in an amount of 3% to 10% by weight. In particular, the mass percentage of the organometallic compound may be 3%, 4%, 5%, 6%, 7%, 8%, 9% or 10%.
In this application, the solvent is used to place the photoresist composition in a liquid state. In some embodiments, the solvent is selected from at least one of polyethylene glycol monomethyl ether monomethacrylate, methyl isobutyl ketone, N-methylpyrrolidone, ethylene glycol monomethyl ether, propylene glycol methyl ether acetate, petroleum ether, and N-heptane.
The mass percentage of the solvent is 70-90% in terms of weight percentage. In some embodiments, the solvent may be 70%, 75%, 80%, 85%, 90%, 95%, or 100% by mass.
In some embodiments of the present application, the photoresist composition further comprises an additive. Specifically, the additive may include an adhesion promoter for improving adhesion between the photoresist composition and the substrate to be etched, so as to prevent the photoresist composition from falling off from the substrate to be etched and failing to implement the photolithography process. Illustratively, the adhesion promoter may include at least one of hexamethyldisilazane, gamma-glycidoxypropyl trimethoxysilane, gamma-aminopropyl triethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris (beta-methoxyethoxy) silane.
In some embodiments of the present application, the additive may further include a leveling agent, which is used to reduce the surface tension of the photoresist composition, so as to promote the photoresist composition to form a flat, smooth and uniform film layer in the film forming process, so as to avoid the difference of the photoresist film layer thickness in different areas and the difference of the photolithography effect. Illustratively, the leveling agent may include at least one of polymethylphenylsiloxane and polydimethylsiloxane.
Further, referring to fig. 1, an embodiment of the present application further provides a method for preparing a driving substrate by using the photoresist composition according to any one of the foregoing embodiments, which includes the following steps:
s101: providing a glass substrate;
s102: forming a film layer to be patterned on the glass substrate;
s103: coating the photoresist composition on the film layer to be patterned to form a photoresist layer;
s104: exposing and developing the photoresist layer in sequence to form a patterned photoresist layer;
s105: etching the film to be patterned by taking the patterned photoresist layer as a mask so as to form a patterned film;
s106: and stripping the patterned photoresist layer.
In this embodiment, the foregoing organic metal compound is introduced into the photoresist composition during the patterning process of the glass-based process, and the organic metal compound includes both a transition metal and an organic group R having a terminal group selected from a vinyl group, an ester group and a trifluoro group, so that the organic metal compound has the advantages of both an organic material and an inorganic material by using the combination of the transition metal and the organic group R, and thus the photosensitivity of the photoresist composition can be increased, and the absorption performance of the photoresist layer on exposure light can be improved, so that the pattern resolution of the patterned film obtained in the glass-based process can be improved, and the application of the photoresist composition in the glass-based yellow light process can be realized.
Wherein, the exposure light is deep ultraviolet light or extreme ultraviolet light. Wherein the extreme ultraviolet light may be a KrF excimer laser beam having a wavelength of 248nm and an ArF excimer laser beam having a wavelength of 193 nm.
Under the exposure light, the absorption effect of the photoresist layer on the exposure light can be further improved, so that the pattern resolution of the glass-based process can be further improved.
In some embodiments, the film to be patterned may be any film that can be patterned by a yellow light process in the driving substrate, for example, each metal film in the driving substrate, and the type of the film to be patterned is not specifically limited in this application.
It is understood that in step S103, the method of coating the photoresist composition may be a coating method such as slot coating, spin coating, roll coating, knife coating, etc., which is not particularly limited in this application.
The above describes in detail a photoresist composition and a method for preparing a driving substrate provided in the embodiments of the present application, and specific examples are applied herein to illustrate the principles and embodiments of the present application, where the above examples are only used to help understand the method and core ideas of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (10)
1. A photoresist composition comprising a photoacid generator, a photocurable resin, an organometallic compound, and a solvent; the organometallic compound is represented by the following general formula (1):
wherein, in formula (1), M is independently selected from transition metals; the end groups of R are independently selected from vinyl, ester or trifluoro groups.
2. The photoresist composition of claim 1, wherein M is selected from Zn, ti, mn, ce, fe, co, cu or Ni.
3. The photoresist composition according to claim 1, where R is selected from the group consisting of acrylate, allyl, trifluoroacetate, or trifluoroethyl.
4. The photoresist composition of claim 1, wherein R is selected from the group consisting of methyl methacrylate, ethyl methacrylate, trifluoroacetate, and trifluoroethyl methacrylate.
5. The photoresist composition according to claim 1, wherein M is selected from Zn, ti, mn, ce, fe, co, cu or Ni; r is selected from acrylate groups.
6. The photoresist composition according to claim 1, wherein, in weight percent,
the mass percentage of the photoacid generator is 1% -5%;
the mass percentage of the photo-curing resin is 5% -20%;
the mass percentage of the organic metal compound is 3% -10%;
the mass percentage of the solvent is 70% -90%.
7. The photoresist composition of claim 1, wherein the photoacid generator is selected from at least one of N-hydroxyphthalimide p-toluenesulfonate, N-hydroxy-5-norbornene-2, 3-dicarboximide p-toluenesulfonate, and N-hydroxy-3, 6-endo-4-cyclohexene dicarboximide p-toluenesulfonate; and/or
The photo-curable resin is selected from acrylic resins; and/or
The solvent is at least one selected from polyethylene glycol monomethyl ether monomethacrylate, methyl isobutyl ketone, N-methyl pyrrolidone, ethylene glycol monomethyl ether, propylene glycol methyl ether acetate, petroleum ether and N-heptane.
8. The photoresist composition of claim 1, further comprising an additive selected from at least one of hexamethyldisilazane, gamma-glycidoxypropyl trimethoxysilane, gamma-aminopropyl triethoxysilane, vinyl trimethoxysilane, vinyl tris (beta-methoxyethoxy) silane, polymethylphenylsiloxane, and polydimethylsiloxane; and/or
The mass percentage of the additive is 0.5% -2%.
9. The photoresist composition of any one of claims 1 to 8, wherein the photoresist composition is used in a yellow light process using deep ultraviolet light or extreme ultraviolet light as an exposure light.
10. A method of manufacturing a drive substrate, comprising:
providing a glass substrate;
forming a film layer to be patterned on the glass substrate;
coating the photoresist composition according to any one of claims 1 to 9 on the film layer to be patterned to form a photoresist layer;
exposing and developing the photoresist layer in sequence to form a patterned photoresist layer;
etching the film to be patterned by taking the patterned photoresist layer as a mask so as to form a patterned film;
and stripping the patterned photoresist layer.
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| CN202310919807.4A CN117518718A (en) | 2023-07-24 | 2023-07-24 | Photoresist composition and preparation method of driving substrate |
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| CN202310919807.4A CN117518718A (en) | 2023-07-24 | 2023-07-24 | Photoresist composition and preparation method of driving substrate |
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