CN117498159B - Novel hybrid integrated laser - Google Patents
Novel hybrid integrated laser Download PDFInfo
- Publication number
- CN117498159B CN117498159B CN202311489257.3A CN202311489257A CN117498159B CN 117498159 B CN117498159 B CN 117498159B CN 202311489257 A CN202311489257 A CN 202311489257A CN 117498159 B CN117498159 B CN 117498159B
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- 230000003287 optical effect Effects 0.000 claims abstract description 122
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000013307 optical fiber Substances 0.000 claims abstract description 12
- 230000010354 integration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005374 Kerr effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a novel hybrid integrated laser, which comprises: the silicon optical chip comprises two or more ring resonators and a sagnac ring, wherein the ring resonators form an optical filter, and one end of the optical filter is connected with the sagnac ring; the semiconductor optical amplifier is positioned on one side of the silicon optical chip, on which the sagnac ring is not arranged, and one side of the semiconductor optical amplifier is plated with a high-reflection film, and the silicon optical chip is directly coupled with one side of the semiconductor optical amplifier, on which the film is not plated; the gain chip is positioned at one side of the high reflection film of the semiconductor optical amplifier and is directly coupled with the semiconductor optical amplifier; a semiconductor optical isolator, in which one or more ring resonators are integrated, and which is located at one side of the gain chip far from the silicon optical chip, and the gain chip is directly coupled with the semiconductor optical isolator; and the output optical fiber is positioned on one side of the semiconductor optical isolator far away from the silicon optical chip and is directly coupled with the semiconductor optical isolator.
Description
Technical Field
The invention relates to a semiconductor laser, belongs to the technical field of optical communication, and particularly relates to a novel hybrid integrated laser.
Background
With the rapid development of optoelectronic technology, semiconductor lasers have wide applications in the fields of aerospace, material processing, military, medical, and the like. The filter and the isolator in the semiconductor laser respectively play roles of ensuring single longitudinal mode oscillation and inhibiting back scattering light. The current mature semiconductor laser in China mostly adopts Bragg gratings and Faraday optical isolators as filters and isolators, however, the Bragg gratings and the Faraday optical isolators have certain defects in practical application, namely, the Bragg gratings have strict bandwidth requirements, complex manufacturing process, high manufacturing cost, easy influence of environment and poor stability; magneto-optical materials in faraday optical isolators require a very strong magnet, which has a weak effect in the visible to near infrared wavelength range and is difficult to operate on integrated platforms. The two problems lead to a reduction in the integration level of the laser, a reduction in the stability and an increase in the cost.
Disclosure of Invention
The invention provides a design method of a novel hybrid integrated laser, which solves the problems existing in the prior art.
The laser adopts a silicon optical chip as a frequency-selecting original, the silicon optical chip comprises a ring resonator, a spiral waveguide and a sagnac ring, the ring resonators are mutually matched to realize the selection of laser output wavelength, the spiral waveguide is used for absorbing stray light, the sagnac ring plays a role in reflection and is used for forming a resonant cavity, and the three mutually matched to jointly realize the frequency-selecting function of the silicon optical chip. In addition, the silicon optical chip is also provided with a heating electrode, the heating electrode is controlled to generate heat by adjusting the current, the refractive index of the waveguide is influenced, on one hand, the wavelength and the phase of the light output by the optical filter are controlled, and on the other hand, the reflectivity of the sagnac ring is controlled. By adopting the mature Si3N4 platform, the silicon optical chip has better integration level, more mature manufacturing process, lower manufacturing cost and higher stability.
On the other hand, the laser adopts a semiconductor optical isolator as an isolation element, and the internal integrated ring resonator breaks the degeneracy between the clockwise and counterclockwise modes of the ring due to the kerr effect, allowing non-reciprocal transmission. The semiconductor optical isolator is passive and nonmagnetic, has no extra energy consumption, and has better compatibility and integration.
The novel hybrid integrated laser achieves the aims of high integration, high stability and low cost by adopting a silicon optical chip and a semiconductor optical isolator.
The technical problems of the invention are mainly solved by the following technical proposal:
A novel hybrid integrated laser, comprising:
A silicon optical chip, a semiconductor optical amplifier, a gain chip, a semiconductor optical isolator and an output optical fiber;
The silicon optical chip comprises two or more ring resonators and a sagnac ring, wherein the ring resonators form an optical filter, and one end of the optical filter is connected with the sagnac ring;
The semiconductor optical amplifier is positioned on one side of the silicon optical chip, on which the sagnac ring is not arranged, and one side of the semiconductor optical amplifier is plated with a high reflection film, and the silicon optical chip is directly coupled with one side of the semiconductor optical amplifier, on which the film is not plated;
The gain chip is positioned on one side of the high reflection film of the semiconductor optical amplifier, and the gain chip is directly coupled with the semiconductor optical amplifier;
The semiconductor optical isolator is internally integrated with one or more ring resonators, and is positioned on one side of the gain chip far away from the silicon optical chip, and the gain chip is directly coupled with the semiconductor optical isolator;
the output optical fiber is positioned on one side of the semiconductor optical isolator far away from the silicon optical chip, and the output optical fiber is directly coupled with the semiconductor optical isolator.
Further, a thermode is attached to the ring resonator in the silicon optical chip.
Further, a thermode is attached to the sagnac loop in the silicon photochip.
Further, the silicon optical chip further comprises one or more spiral waveguides for absorbing residual light.
Furthermore, a thermode is attached to the ring resonator in the semiconductor optical isolator, and the thermode is controlled to generate heat by adjusting the current.
Further, the silicon optical chip and the semiconductor optical amplifier, the semiconductor optical amplifier and the gain chip, and the gain chip and the semiconductor optical isolator are coupled by oblique wave conduction.
Compared with the prior art, the invention has the beneficial effects that:
the novel hybrid integrated laser solves the problems of low integration level, small stability and high cost of the current laser.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a schematic diagram of a semiconductor optical isolator according to the present invention;
fig. 3 is a schematic structural diagram of a silicon optical chip according to the present invention.
Description of the drawings: 1. a silicon optical chip; 2. a semiconductor optical amplifier; 3. a gain chip; 4. a semiconductor optical isolator; 5. an output optical fiber; 41. a first ring resonator; 42. a diagonal waveguide; 11. a hot electrode; 12. a second ring resonator; 13. a helical waveguide; 14. a sagnac loop.
Detailed Description
The invention is further described in connection with the following detailed description, in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "provided," "connected," and the like are to be construed broadly, and may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, the novel hybrid integrated laser of the present embodiment includes:
The silicon optical chip 1 is positioned at the leftmost side of the laser and is used for optical filtering, light with target wavelength is filtered out by utilizing an optical filter contained in the optical chip, light with other wave bands is restrained, one side of the optical filter is connected with the sagnac loop 14 with the light reflection function, and the other side of the optical filter is communicated with the outside through the inclined waveguide 42.
The semiconductor optical amplifier 2 provides a gain medium for the laser optical cavity, two sides of the gain medium are communicated with the outside through the inclined waveguide, one side of the gain medium is plated with a 10% high reflection film, the gain medium is positioned on the right side of the silicon optical chip 1, the non-plated side of the gain medium is directly coupled with the silicon optical chip 1, and the silicon optical chip 1 and the semiconductor optical amplifier 2 form the laser optical cavity together.
And the gain chip 3 is used for amplifying the laser output by the optical cavity, two sides of the gain chip are communicated with the outside through the inclined waveguide, are positioned on the right side of the semiconductor optical amplifier 2 and are directly coupled with the semiconductor optical amplifier 2.
The semiconductor optical isolator 4 is used for suppressing reflected light from the optical fiber and reducing interference, and is positioned on the right side of the gain chip 3 and is directly coupled with the gain chip 3 through the inclined waveguide 42.
And an output optical fiber 5 for outputting laser light, which is positioned on the right side of the optical isolator 4 and is directly coupled with the optical isolator 4.
As shown in fig. 2, a semiconductor optical isolator 4 used in the present embodiment realizes an optical isolation function, including a first ring resonator 41 and two-stage inclined waveguide 42, which breaks degeneracy between clockwise and counterclockwise modes by using kerr effect of the first ring resonator 11, allows non-reciprocal transmission, and thus realizes an isolation effect of reverse light. The first ring resonator 41 in the semiconductor optical isolator 4 is provided with the heat electrode 11, and the heat electrode is controlled to generate heat by adjusting the magnitude of the current, so that the isolation effect of the semiconductor optical isolator 4 can be controlled.
As shown in fig. 3, the laser wavelength selection in this embodiment is performed using a silicon optical chip, which includes two second ring resonators 12, four helical waveguides 13, a sagnac loop 14, and a thermode 11 attached to the waveguides. Wherein the two second ring resonators 12 together constitute an optical filter, which screens out the target wavelength and removes light of other wavelengths. Four helical waveguides 13 are used to absorb light that is not coupled into the ring resonator, reducing interference. A sagnac loop 14 acts to reflect light and is used to form the optical cavity. The heating of the hot electrode is controlled by adjusting the current of the hot electrode, the wave guide rate of the chip is influenced, the hot electrode 11 controls the wavelength and the phase of the output light of the optical filter, and the reflectivity of the sagnac loop 14 is controlled. The gain chip 3 is positioned on the side of the semiconductor optical amplifier 2 coated with the high reflection film, and the gain chip 3 and the semiconductor optical amplifier 2 are directly coupled.
The silicon optical chip 1 and the semiconductor optical amplifier 2 form an optical cavity of the laser, laser output by the optical cavity is amplified by the gain chip 3 and then enters the output optical fiber 5 to be output through the semiconductor optical isolator 4, and the semiconductor optical isolator 4 isolates reflected light in the output optical fiber 5 to reduce interference.
The foregoing is merely exemplary embodiments of the present invention, and specific structures and features that are well known in the art are not described in detail herein. It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (6)
1. A novel hybrid integrated laser, comprising:
A silicon optical chip (1), a semiconductor optical amplifier (2), a gain chip (3), a semiconductor optical isolator (4) and an output optical fiber (5);
The silicon optical chip (1) comprises two or more ring resonators and a sagnac ring, wherein the ring resonators form an optical filter, and one end of the optical filter is connected with the sagnac ring;
The semiconductor optical amplifier (2) is positioned on one side of the silicon optical chip (1) where the sagnac ring is not arranged, a high reflection film is plated on one side of the semiconductor optical amplifier (2), and the silicon optical chip (1) and one side of the semiconductor optical amplifier (2) where the film is not plated are directly coupled;
The gain chip (3) is positioned on one side of the semiconductor optical amplifier (2) plated with the high reflection film, and the gain chip (3) is directly coupled with the semiconductor optical amplifier (2);
The semiconductor optical isolator (4) is positioned on one side of the gain chip (3) far away from the silicon optical chip (1), one or more ring resonators are integrated inside the semiconductor optical isolator (4), and the gain chip (3) is directly coupled with the semiconductor optical isolator (4);
The output optical fiber (5) is positioned on one side of the semiconductor optical isolator (4) far away from the silicon optical chip (1), and the output optical fiber (5) is directly coupled with the semiconductor optical isolator (4).
2. The novel hybrid integrated laser of claim 1, wherein a thermode is affixed to the ring resonator.
3. The novel hybrid integrated laser of claim 2, wherein the sagnac loop has a thermode attached thereto.
4. A novel hybrid integrated laser as claimed in claim 3, characterized in that the silicon optical chip (1) further comprises one or more helical waveguides.
5. The novel hybrid integrated laser of claim 4, wherein a thermode is attached to the ring resonator in the semiconductor optical isolator (4).
6. The novel hybrid integrated laser of claim 5, wherein the silicon optical chip (1) and the semiconductor optical amplifier (2), the semiconductor optical amplifier (2) and the gain chip (3), the gain chip (3) and the semiconductor optical isolator (4) are all coupled by oblique wave conduction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311489257.3A CN117498159B (en) | 2023-11-09 | 2023-11-09 | Novel hybrid integrated laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311489257.3A CN117498159B (en) | 2023-11-09 | 2023-11-09 | Novel hybrid integrated laser |
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| Publication Number | Publication Date |
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| CN117498159A CN117498159A (en) | 2024-02-02 |
| CN117498159B true CN117498159B (en) | 2024-06-21 |
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| CN202311489257.3A Active CN117498159B (en) | 2023-11-09 | 2023-11-09 | Novel hybrid integrated laser |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785900A (en) * | 2016-12-22 | 2017-05-31 | 武汉邮电科学研究院 | A kind of Wavelength tunable laser with active-passive lock mould of silicon substrate hybrid integrated |
| CN113557643A (en) * | 2019-03-01 | 2021-10-26 | 新飞通光电公司 | Wavelength control method of silicon photonic external cavity tunable laser |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538841B (en) * | 2014-12-19 | 2017-12-22 | 武汉光迅科技股份有限公司 | A kind of hybrid integrated outer cavity adjustable laser based on array waveguide grating |
| CN106207749A (en) * | 2016-08-29 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of narrow linewidth semiconductor laser based on Single wavelength narrow-band-filter assembly frequency-selecting |
| CN113644543B (en) * | 2020-04-26 | 2022-11-18 | 华为技术有限公司 | Semiconductor laser with tunable wavelength |
| CN114826409B (en) * | 2021-01-28 | 2024-02-23 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| WO2023059889A1 (en) * | 2021-10-08 | 2023-04-13 | Neophotonics Corporation | Wavelength bandwidth expansion for tuning or chirping with a silicon photonic external cavity tunable laser |
| CN116316059A (en) * | 2022-06-07 | 2023-06-23 | 珠海映讯芯光科技有限公司 | External optical feedback resistant hybrid integrated external cavity semiconductor laser |
| CN115799983A (en) * | 2022-12-26 | 2023-03-14 | 中国科学院上海微系统与信息技术研究所 | A laser based on optical amplifier and silicon optical microcavity |
| CN116995526B (en) * | 2023-08-08 | 2024-04-09 | 芯联新(河北雄安)科技有限公司 | Space coupling narrow linewidth semiconductor external cavity laser |
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- 2023-11-09 CN CN202311489257.3A patent/CN117498159B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785900A (en) * | 2016-12-22 | 2017-05-31 | 武汉邮电科学研究院 | A kind of Wavelength tunable laser with active-passive lock mould of silicon substrate hybrid integrated |
| CN113557643A (en) * | 2019-03-01 | 2021-10-26 | 新飞通光电公司 | Wavelength control method of silicon photonic external cavity tunable laser |
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