CN117476492A - Exhaust unit in semiconductor manufacturing system - Google Patents
Exhaust unit in semiconductor manufacturing system Download PDFInfo
- Publication number
- CN117476492A CN117476492A CN202210865720.9A CN202210865720A CN117476492A CN 117476492 A CN117476492 A CN 117476492A CN 202210865720 A CN202210865720 A CN 202210865720A CN 117476492 A CN117476492 A CN 117476492A
- Authority
- CN
- China
- Prior art keywords
- exhaust unit
- dry pump
- semiconductor manufacturing
- manufacturing system
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000428 dust Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000001816 cooling Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000005057 refrigeration Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 abstract description 9
- 238000001704 evaporation Methods 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D50/00—Combinations of methods or devices for separating particles from gases or vapours
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
Abstract
The invention discloses an exhaust unit in a semiconductor preparation system, which is communicated with a process cavity in the semiconductor preparation system, and comprises: the device comprises an exhaust pipe and a dry pump, wherein the dry pump is communicated with the exhaust pipe, and a filter and a dust collector are sequentially arranged between the dry pump and the exhaust pipe. According to the invention, the filter and the dust collector are arranged at the front end of the dry pump, so that the dust in the gas flowing into the dry pump is filtered, the quantity of the dust flowing into the dry pump is reduced, the probability of evaporation between the dust and the dry pump is naturally reduced, and the purpose of protecting the dry pump is achieved.
Description
Technical Field
The invention belongs to the field of semiconductor preparation devices, and particularly relates to an exhaust unit in a semiconductor preparation system.
Background
Generally, a semiconductor manufacturing apparatus selectively and repeatedly performs processes such as diffusion, vapor deposition, development, etching, ion implantation, and the like on a wafer to perform processing. In such a manufacturing process, a process gas is introduced into a closed process chamber in a predetermined atmosphere, and a reaction occurs on a wafer in the process chamber. For example, the vapor deposition process for forming a thin film is performed using a chemical vapor deposition (Chemical Vapor Deposition, CVD) method, a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) method, or the like.
Fig. 1 is a schematic block diagram showing a prior art semiconductor manufacturing apparatus for performing CVD process treatment.
Referring to fig. 1, a related art semiconductor manufacturing apparatus for performing CVD process treatment includes: a process chamber 101 for processing a wafer 104 placed on a chuck by using a supplied process gas; a gas supply line 102 communicating with the process chamber for supplying a process gas to be CVD-treated; an exhaust pipe 105 which is communicated with the process chamber and is used for exhausting the exhaust gas after the processing treatment; and a dry pump 106 connected to the process chamber through the exhaust pipe for sucking exhaust gas exhausted from the process chamber.
However, powder impurities are generated in the process chamber in the production process, enter the dry pump through the exhaust pipeline, and have evaporation effect with the dry pump, and adhere to the pump body, so that the performance of the pump body is reduced, and even the problem of starting and stopping occurs.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an exhaust unit in a semiconductor preparation system, and the evaporation phenomenon of dust and a dry pump body is reduced by the structural design of the exhaust unit, so that the service life of the dry pump is prolonged.
The aim of the invention is achieved by the following technical scheme:
an exhaust unit in a semiconductor manufacturing system, the exhaust unit in communication with a process chamber in the semiconductor manufacturing system, the exhaust unit comprising: the device comprises an exhaust pipe and a dry pump, wherein the dry pump is communicated with the exhaust pipe, and a filter and a dust collector are sequentially arranged between the dry pump and the exhaust pipe.
According to a preferred embodiment, the dust collector is provided with dust particle collecting attachment structures on the inner side of the tube wall.
According to a preferred embodiment, the dust particle collecting attachment structure is not limited to a number of holes provided on the inner side of the tube wall.
According to a preferred embodiment, a refrigeration structure is also provided in the exhaust unit.
According to a preferred embodiment, the cooling structure is a spiral tube body, which cooling structure is arranged around the dust collector outer wall.
According to a preferred embodiment, the end of the refrigeration structure is in communication with the dry pump and gas is introduced into the dry pump.
According to a preferred embodiment, the gas is N 2 。
According to a preferred embodiment, a turntable is arranged in the process chamber, and silicon wafers are arranged on the turntable.
According to a preferred embodiment, the top of the process chamber is provided with an air inlet.
According to a preferred embodiment, the bottom of the process chamber is provided with a vent hole communicating with the venting unit.
The foregoing inventive concepts and various further alternatives thereof may be freely combined to form multiple concepts, all of which are contemplated and claimed herein. Various combinations will be apparent to those skilled in the art from a review of the present disclosure, and are not intended to be exhaustive or all of the present disclosure.
The invention has the beneficial effects that:
according to the invention, the filter and the dust collector are arranged at the front end of the dry pump, so that the dust in the gas flowing into the dry pump is filtered, the quantity of the dust flowing into the dry pump is reduced, the probability of evaporation between the dust and the dry pump is naturally reduced, and the purpose of protecting the dry pump is achieved;
in addition, the air temperature flowing into the dry pump is reduced by arranging the refrigerating structure in the exhaust unit, the body temperature of the dry pump is reduced, and the evaporation conditions are destroyed, so that the purpose of inhibiting dust and the body from generating evaporation is achieved.
Drawings
FIG. 1 is a schematic view of a conventional exhaust unit;
FIG. 2 is a schematic view of the structure of the exhaust unit of the present invention;
the device comprises a process chamber 101, an air supply pipeline 102, a chuck 103, a wafer 104, an exhaust pipeline 105, a dry pump 106, a process chamber 201, an air inlet 202, a turntable 203, a silicon wafer 204, an exhaust pipe 205, a filter 206, a dust collector 207, a dry pump 208 and a refrigerating structure 209.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that, for the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments.
In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships in which the inventive product is conventionally placed in use, and are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, in the present invention, if a specific structure, connection relationship, position relationship, power source relationship, etc. are not specifically written, the structure, connection relationship, position relationship, power source relationship, etc. related to the present invention can be known by those skilled in the art without any creative effort.
Example 1:
referring to fig. 2, the present invention discloses an exhaust unit in a semiconductor manufacturing system, which communicates with a process chamber 201 in the semiconductor manufacturing system.
The exhaust unit includes: the dust collector comprises an exhaust pipe 205 and a dry pump 208, wherein the dry pump 208 is communicated with the exhaust pipe 205, and a filter 206 and a dust collector 207 are sequentially arranged between the dry pump 208 and the exhaust pipe 205.
By providing the filter 206 and the dust collector 207 at the front end of the dry pump 208, the dust in the gas flowing into the dry pump 208 is filtered, the amount of the dust flowing into the dry pump 208 is reduced, and naturally, the probability of evaporation between the dust and the dry pump 208 is reduced, so that the dry pump 208 is protected.
Preferably, a dust particle collecting and adhering structure is provided on the inner side of the pipe wall of the dust collector 207.
Further, the dust particle collecting and attaching structure is not limited to a plurality of holes arranged on the inner side of the pipe wall.
Preferably, a refrigeration structure 209 is also provided in the exhaust unit.
Further, the cooling structure 209 is a spiral tube, and the cooling structure 209 is disposed around the outer wall of the dust collector 207.
Preferably, the end of the refrigeration structure 209 is in communication with the dry pump 208 and is configured to supply a gas to the dry pump 208. For example, the gas is N 2 。
By providing the cooling structure 209 in the exhaust unit, the temperature of the gas flowing into the dry pump 208 is reduced, the body temperature of the dry pump 208 is reduced, and the conditions for evaporation are destroyed, thereby achieving the purpose of suppressing the evaporation of dust and body.
Preferably, a turntable 203 is disposed in the process chamber 201, and a silicon wafer 204 is disposed on the turntable 203.
Preferably, the top of the process chamber 201 is provided with an air inlet 202.
Preferably, an exhaust hole is provided at the bottom of the process chamber 201 to communicate with the exhaust unit.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. An exhaust unit in a semiconductor manufacturing system, said exhaust unit being in communication with a process chamber (201) in the semiconductor manufacturing system, characterized in that,
the exhaust unit includes: the dust collector comprises an exhaust pipe (205) and a dry pump (208), wherein the dry pump (208) is communicated with the exhaust pipe (205), and a filter (206) and a dust collector (207) are sequentially arranged between the dry pump (208) and the exhaust pipe (205).
2. The exhaust unit in the semiconductor manufacturing system according to claim 1, wherein a dust particle collecting attachment structure is provided inside a pipe wall of the dust collector (207).
3. The exhaust unit in the semiconductor manufacturing system according to claim 1, wherein the dust particle collecting attachment structure is not limited to a plurality of holes provided on the inner side of the pipe wall.
4. The exhaust unit in a semiconductor manufacturing system according to claim 1, wherein a refrigeration structure is further provided in the exhaust unit.
5. The exhaust unit in a semiconductor manufacturing system according to claim 4, wherein the cooling structure is a spiral pipe body, and the cooling structure is disposed around an outer wall of the dust collector (207).
6. The exhaust unit in a semiconductor manufacturing system according to claim 1, wherein the end of the cooling structure is in communication with the dry pump (208) and gas is introduced into the dry pump (208).
7. The exhaust unit in a semiconductor manufacturing system according to claim 6, wherein the gas is N 2 。
8. The exhaust unit in a semiconductor manufacturing system according to claim 1, wherein a turntable (203) is provided in the process chamber (201), and silicon wafers (204) are provided on the turntable (203).
9. The exhaust unit in a semiconductor manufacturing system according to claim 8, wherein the top of the process chamber (201) is provided with an air inlet (202).
10. The exhaust unit in the semiconductor manufacturing system according to claim 8, wherein a bottom of the process chamber (201) is provided with an exhaust hole in communication with the exhaust unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210865720.9A CN117476492A (en) | 2022-07-22 | 2022-07-22 | Exhaust unit in semiconductor manufacturing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210865720.9A CN117476492A (en) | 2022-07-22 | 2022-07-22 | Exhaust unit in semiconductor manufacturing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117476492A true CN117476492A (en) | 2024-01-30 |
Family
ID=89633534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210865720.9A Pending CN117476492A (en) | 2022-07-22 | 2022-07-22 | Exhaust unit in semiconductor manufacturing system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117476492A (en) |
-
2022
- 2022-07-22 CN CN202210865720.9A patent/CN117476492A/en active Pending
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