CN117467984B - Thin film deposition apparatus and deposition method - Google Patents
Thin film deposition apparatus and deposition method Download PDFInfo
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- CN117467984B CN117467984B CN202311488854.4A CN202311488854A CN117467984B CN 117467984 B CN117467984 B CN 117467984B CN 202311488854 A CN202311488854 A CN 202311488854A CN 117467984 B CN117467984 B CN 117467984B
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 31
- 238000000151 deposition Methods 0.000 title claims description 73
- 230000008021 deposition Effects 0.000 claims description 63
- 239000007789 gas Substances 0.000 claims description 44
- 238000005137 deposition process Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 10
- 238000007736 thin film deposition technique Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a thin film deposition device and a thin film deposition method. The thin film deposition apparatus according to an embodiment of the present invention includes: the reaction cavity is provided with an air inlet and an air outlet; the electrode plate is arranged in the reaction cavity; the base is arranged in the reaction cavity and provided with a bearing surface for bearing the wafer, and the bearing surface is opposite to the electrode plate; the first end of the electrode plate and the first end of the base are arranged adjacent to the air inlet, and the second end of the electrode plate and the second end of the base are arranged adjacent to the air outlet, so that air flows out from the air inlet to the air outlet through an air flow channel between the electrode plate and the base; the distance between the first end of the electrode plate and the first end of the base is a first distance; the distance between the second end of the electrode plate and the second end of the base is a second distance, and the first distance is smaller than the second distance. According to the thin film deposition device and the thin film deposition method, the thin film with better uniformity can be deposited.
Description
Technical Field
The invention relates to the technical field of semiconductor deposition, in particular to a thin film deposition device and a thin film deposition method.
Background
Cross-flow deposition techniques are widely used in the semiconductor industry to form thin films on the surface of semiconductor materials. During cross-flow deposition, the reactant gas molecules pass through a narrow reaction zone and chemically react with the substrate surface during flight to eventually form a thin film.
In the prior art, uniformity of films obtained by cross-flow deposition is often poor.
Accordingly, it is desirable to have a new thin film deposition apparatus and deposition method that overcomes the above-described problems.
Disclosure of Invention
In view of the foregoing, an object of the present invention is to provide a thin film deposition apparatus and a thin film deposition method, whereby a thin film with better uniformity is deposited.
According to an aspect of the present invention, there is provided a thin film deposition apparatus including: the reaction cavity is provided with an air inlet and an air outlet; the electrode plate is arranged in the reaction cavity; the base is arranged in the reaction cavity and provided with a bearing surface for bearing the wafer, and the bearing surface is arranged opposite to the electrode plate; the first end of the electrode plate and the first end of the base are arranged adjacent to the air inlet, and the second end of the electrode plate and the second end of the base are arranged adjacent to the air outlet, so that air flows out from the air inlet to the air outlet through an air flow channel between the electrode plate and the base; the distance between the first end of the electrode plate and the first end of the base is a first distance; the distance between the second end of the electrode plate and the second end of the base is a second distance, and the first distance is smaller than the second distance.
Optionally, the susceptor includes a heating device disposed on the carrying surface for heating the wafer.
Optionally, the bearing surface of the base is horizontally arranged with one of the electrode plates, and the bearing surface of the base is obliquely arranged with the other electrode plate; or the bearing surface of the base and the electrode plate are obliquely arranged;
the distance difference between the first distance and the second distance is set according to a deposition process, so that the thickness of a deposition layer on each part of the surface of the wafer is uniform.
Optionally, the first end of the electrode plate and/or the second end of the electrode plate is connected to a driving unit, and the driving unit is used for driving the first end of the electrode plate and/or the second end of the electrode plate to approach or separate from the base.
Optionally, the base is connected with a driving unit, and the driving unit is used for driving the base to approach or separate from the electrode plate.
Optionally, the first end of the base is fixed, and the driving unit is connected with the second end of the base; the second end of the base is close to or far away from the second end of the upper electrode plate of the electrode plate under the drive of the drive unit.
Optionally, the thin film deposition apparatus further includes:
And the control unit is used for providing a driving signal to the driving unit so as to control the first distance and/or the second distance.
Optionally, the thin film deposition apparatus is configured to perform at least one deposition process, and the control unit is configured to: before each deposition process starts, providing the corresponding driving signal to adjust the first distance and/or the second distance so that:
the first distance corresponding to the subsequent deposition process is different from the first distance corresponding to the previous deposition process, and/or,
The second distance corresponding to the subsequent deposition process is different from the second distance corresponding to the previous deposition process.
Optionally, the drive unit comprises a stepper motor, which adjusts the first distance and/or the second distance in a stepwise manner.
According to another aspect of the present invention, there is provided a deposition method, applied to a thin film deposition apparatus as described above, comprising:
before forming at least one deposition layer, adjusting the electrode plate and/or the susceptor according to a current deposition process such that the first distance is smaller than the second distance; and
And in the formation stage of each deposition layer, introducing reaction gas into the reaction cavity through the gas inlet so as to form the deposition layer on the surface of the wafer.
According to the thin film deposition device and the thin film deposition method, the distance between the first end of the electrode plate and the first end of the base is smaller than the distance between the second end of the electrode plate and the second end of the base, and the uniformity and quality of the deposited thin film are better.
Further, the electrode plates and/or the base are obliquely arranged, the distance between the electrode plates and the base is uniformly increased along the airflow flowing direction, and the uniformity and quality of all parts of the deposited film are ensured.
Further, the interval between the electrode plate and the base is adjustable, and the method can be applied to the deposition of different kinds of deposition gases.
Furthermore, the distance between the electrode plate and the base is adjustable, so that a multilayer film with better uniformity and quality can be deposited on the same wafer.
Further, the base is horizontally arranged, the electrode plates are obliquely arranged, and convenience in wafer transfer is guaranteed while uniformity and quality of film deposition are guaranteed.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:
fig. 1 shows a schematic structure of a thin film deposition apparatus according to the related art.
Fig. 2 shows a schematic diagram of the barshen principle.
Fig. 3 is a schematic view showing a structure of a thin film deposition apparatus according to a first embodiment of the present invention.
Fig. 4 is a schematic diagram showing a structure of a thin film deposition apparatus according to a second embodiment of the present invention.
Fig. 5 shows a schematic configuration of a thin film deposition apparatus according to a third embodiment of the present invention.
Fig. 6 shows a schematic configuration of a thin film deposition apparatus according to a fourth embodiment of the present invention.
Fig. 7a shows a schematic view of a deposition effect according to the prior art.
Fig. 7b shows a schematic view of the deposition effect according to an embodiment of the present invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts. For clarity, the various features of the drawings are not drawn to scale. Furthermore, some well-known portions may not be shown in the drawings.
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. Numerous specific details of the invention, such as construction, materials, dimensions, processing techniques and technologies, may be set forth in the following description in order to provide a thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It will be understood that when a layer, an area, or a structure is described as being "on" or "over" another layer, another area, it can be referred to as being directly on the other layer, another area, or another layer or area can be included between the layer and the other layer, another area. And if the component is turned over, that layer, one region, will be "under" or "beneath" the other layer, another region.
The cross flow (Cross flow) deposition apparatus may be applied to chemical vapor deposition (CVD, PECVD), atomic layer deposition (ALD, PEALD), and the like. Fig. 1 shows a schematic structure of a thin film deposition apparatus according to the related art. As shown in fig. 1, the (deposition) gas flows in from one end of the reaction chamber 400 and flows out from the other end. The deposition gas is deposited on the wafer 600 between the electrode plate 100 and the susceptor 200.
The inventors have found that the uniformity of the deposited film is often poor in existing cross-flow deposition apparatus. The inventor has found through intensive researches that the inlet of the conventional cross flow deposition device is generally higher in precursor concentration and pressure, and the probability of adsorbing/depositing reactants on the surface of a sample is higher than that of the outlet, so that the film thickness of the inlet is higher. In addition, as shown in fig. 2 (the dashed box in fig. 2 is a plasma working area), according to the bashen (Paschen) theorem (pressure×distance=pd value), the gas inlet is generally higher in pressure, and the film quality (density, impurity content, crystallinity, etc.) near the gas inlet is better and the gas outlet film quality is slightly worse within the same plasma pulse time, resulting in poor film uniformity.
In order to solve the problems of uneven deposition thickness, inconsistent deposition quality and the like of the conventional cross flow deposition device, the inventor provides a novel deposition device and a novel deposition method (a cross flow reaction cavity).
Fig. 3 is a schematic view showing a structure of a thin film deposition apparatus according to a first embodiment of the present invention. As shown in fig. 3, the (cross flow) deposition apparatus according to the first embodiment of the present invention includes an electrode plate 100, a susceptor 200, and a reaction chamber 400. Wherein the electrode plate 100 comprises a first end 101 of the electrode plate and a second end 102 of the electrode plate; the base 200 includes a first end 201 of the base and a second end 202 of the base; an air flow channel 300 is formed between the electrode plate 100 and the base 200.
Specifically, reaction chamber 400 has an air inlet 401 and an air outlet 402.
The electrode plate 100 is disposed in the reaction chamber 400.
The susceptor 200 is disposed within the reaction chamber 400 and has a carrying surface for carrying a wafer, the carrying surface being disposed opposite to the electrode plate 100. Optionally, the bearing surface is at least a portion of the upper surface of the base 200, and the bearing surface is a plane.
The first end 101 of the electrode plate, the first end 201 of the susceptor, and the gas inlet 401 are disposed adjacent, and the second end 102 of the electrode plate, the second end 202 of the susceptor, and the gas outlet 402 are disposed adjacent, such that the (deposition/reaction) gas flows out from the gas inlet 401 to the gas outlet 401 through the gas flow channel 300 between the electrode plate 100 and the susceptor 200.
The distance between the first end 101 of the electrode plate and the first end 201 of the base is a first distance (D1); the distance between the second end 102 of the electrode plate and the second end 202 of the base is a second distance (D2), and the first distance (D1) is less than the second distance (D2).
In an alternative embodiment of the invention, the base 200 includes a heating device (not shown) disposed on the load bearing surface. The heating device is used for heating the wafer.
Alternatively, the gas pressure (high pressure) near the gas inlet 401 may be higher than the gas pressure (low pressure) near the gas outlet 402 as it flows through the gas flow channel 300.
According to the cross flow deposition device provided by the embodiment of the invention, the electrode plate and/or the base are/is obliquely arranged along the gas flow (deposition) direction, so that the thickness uniformity and the quality uniformity of film deposition along the deposition direction are ensured.
Further, in an alternative embodiment of the present invention, the bearing surface of the base is disposed horizontally with one of the electrode plates, and the bearing surface of the base is disposed obliquely with the other of the electrode plates; or the bearing surface of the base and the electrode plate are obliquely arranged. The distance difference between the first distance and the second distance is set according to the deposition process so as to make the thickness of the deposition layer uniform on all parts of the surface of the wafer. Optionally, the deposition apparatus further comprises a driving unit and a control unit. The driving unit is connected with the base and/or the electrode plate to drive the base and/or the electrode plate to move. The control unit is used for providing a driving signal to the driving unit so as to control the first distance and/or the second distance.
Fig. 4 shows a schematic structural view of a deposition apparatus according to a second embodiment of the present invention. As shown in fig. 4, the cross flow deposition apparatus according to the second embodiment of the present invention includes an electrode plate 100, a susceptor 200, and a reaction chamber 400. Wherein a wafer 600 is placed on a load-bearing surface of the susceptor 200.
Specifically, the base 200 is horizontally disposed. The electrode plate 100 is disposed obliquely and is fixed in the reaction chamber 400. The base 200 is connected to a driving unit (not shown). The driving unit drives the base 200 (to move up and down) toward or away from the electrode plate 100, thereby adjusting specific values of the first distance and the second distance.
The wafer 600 is disposed on a load-bearing surface of the susceptor 200. Deposition gas flows into the gas flow path 300 through the gas inlet 401 to deposit on the wafer 600. The deposited gas flows out of the gas flow channel 300 via the gas outlet 402.
In alternative embodiments of the present invention, the structures of the electrode plate 100, the susceptor 200, the reaction chamber 400, the susceptor 500, the wafer 600, etc. may be existing structures or modified from existing structures.
In an alternative embodiment of the present invention, the electrode plate 100 is disposed obliquely, but is not fixed in the reaction chamber 400. Specifically, the electrode plate 100 includes a first end 101 of the electrode plate and a second end 102 of the electrode plate. The first end 101 of the electrode plate is positioned at one side of the air inlet 401; the second end 102 of the electrode plate is located on the side of the gas outlet 402. The first end 101 of the electrode plate and/or the second end 102 of the electrode plate is connected to a drive unit (not shown). The driving unit drives the first end 101 of the electrode plate and/or the second end 102 of the electrode plate toward or away from the base 200.
Fig. 5 shows a schematic structural view of a deposition apparatus according to a third embodiment of the present invention. As shown in fig. 5, the cross flow deposition apparatus according to the third embodiment of the present invention includes a reaction chamber 400, an electrode plate 100, a susceptor 200, and a driving unit 700. Wherein the electrode plate 100 comprises a first end 101 of the electrode plate and a second end 102 of the electrode plate; the base 200 includes a first end 201 of the base and a second end 202 of the base.
Specifically, the first end 201 of the base is fixed. The second end 202 of the base is connected to the drive unit 700. The driving unit 700 drives the second end 202 of the base toward or away from the second end 102 of the electrode plate to control the distance between the second end 202 of the base and the second end 102 of the electrode plate.
In an alternative embodiment of the invention, the distance between the first end 101 of the electrode plate and the first end 201 of the base is a first distance. The driving unit 700 controls the distance between the second end 102 of the electrode plate and the second end 202 of the base to be a second distance. Wherein the first distance is smaller than the second distance, and a distance difference d between the first distance and the second distance is between 1mm and 10mm (for example, a wafer with a diameter of 300 mm). Of course, the specific value of the distance difference d between the first distance and the second distance may be set according to the actual situation. Alternatively, the first distance and/or the second distance are not a specific value, but merely refer to the distance between the two ends; the first and second are for distinguishing distances at different locations.
Fig. 6 shows a schematic structural view of a deposition apparatus according to a fourth embodiment of the present invention. As shown in fig. 6, the cross flow deposition apparatus according to the fourth embodiment of the present invention includes an electrode plate 100, a susceptor 200, a driving unit 700, and a control unit (not shown). Wherein the electrode plate 100 comprises a first end 101 of the electrode plate and a second end 102 of the electrode plate; the base 200 includes a first end 201 of the base and a second end 202 of the base.
In particular, the control unit is configured to control a distance between the first end 101 of the electrode plate and the first end 201 of the base and/or to control a distance between the second end 102 of the electrode plate and the second end 202 of the base. The control unit is, for example, a numerical control device, a computer, or the like.
The driving unit 700 is connected with the control unit to receive a driving (control) signal transmitted (provided) by the control unit. The driving unit 700 is connected to the first end 101 of the electrode plate and/or the second end 102 of the electrode plate and/or the first end 201 of the base and/or the second end 202 of the base, respectively, and drives the first end 101 of the electrode plate and/or the second end 102 of the electrode plate and/or the first end 201 of the base and/or the second end 202 of the base to move according to the driving signal. The distance between the first end 101 of the electrode plate and the first end 201 of the base, and/or the distance between the second end 102 of the electrode plate and the second end 202 of the base may be arbitrarily adjusted/controlled under the control of the control unit, the execution of the driving unit 700.
Alternatively, the driving unit 700 includes a stepping motor. The stepper motor adjusts the distance between the first end 101 of the electrode plate and the first end 201 of the base, and/or adjusts the distance between the second end 102 of the electrode plate and the second end 202 of the base, in a stepwise manner.
In an alternative embodiment of the present invention, the deposition apparatus is used to perform at least one deposition process. The control device is configured to: before each deposition process starts, providing corresponding driving signals to adjust the first distance and/or the second distance so that: the first distance corresponding to the subsequent deposition process is different from the first distance corresponding to the previous deposition process and/or the second distance corresponding to the subsequent deposition process is different from the second distance corresponding to the previous deposition process.
In one embodiment, as shown in connection with FIG. 6, a cross-flow deposition apparatus may be used to deposit a multilayer film. The cross flow deposition apparatus includes an electrode plate 100, a susceptor 200, a reaction chamber 400, a driving unit 700, and a control unit (not shown). Wherein the cross flow deposition device is provided with stations (an initial station, a first station, a second station and the like) in various forms.
In the initial position, the base 200 is disposed horizontally. The transfer device transfers the wafer 600 to above the susceptor 200 and places the wafer on the susceptor 200.
After the wafer 600 is transferred above the susceptor 200, the control unit controls the distance between the first end 101 of the electrode plate and the first end 201 of the susceptor to be a first distance, and controls the distance between the second end 102 of the electrode plate and the second end 202 of the susceptor to be a second distance, so as to form a first station of the cross flow deposition apparatus. At the first station, a first deposition gas enters from the gas inlet 401, and a first deposition is performed on the wafer 600 to obtain a first layer of thin film; the deposited gas flows out of the gas outlet 402.
After the first deposition is completed, the control unit controls the distance between the first end 101 of the electrode plate and the first end 201 of the susceptor to be a first distance, and controls the distance between the second end 102 of the electrode plate and the second end 202 of the susceptor to be a third distance (the third distance is greater than the first distance) so as to form a second station of the cross flow deposition apparatus. At the second station, a second deposition gas is introduced from the gas inlet 401, and a second deposition is performed on the wafer 600 to obtain a second thin film (the second thin film is, for example, located above the first thin film); the deposited gas flows out of the gas outlet 402. Optionally, after the first deposition is completed, a cleaning gas (e.g., nitrogen) is introduced to clean the reaction chamber 400 before the second deposition gas is introduced.
Fig. 7a shows a schematic view of a deposition effect according to the prior art. As can be seen from fig. 1,2 and the related description, in the prior art, along the gas flow path (deposition direction), the thickness of the deposited film 800 is uneven, the thickness of the film near the gas inlet end is larger, and the thickness of the film near the gas outlet end is smaller.
Fig. 7b shows a schematic view of the deposition effect according to an embodiment of the present application. As can be seen from the description of the cross-flow deposition apparatus of the present application and the related descriptions in fig. 3 to 6, the uniformity of the thin film 800 deposited by the cross-flow deposition apparatus according to the embodiment of the present application is good, and the thickness is uniform along the air flow direction.
According to another aspect of the invention, a (lateral flow) deposition method is provided. The cross flow deposition method is applied to the deposition device, and comprises the following steps:
Before forming at least one deposition layer, the electrode plate and/or the susceptor are adjusted according to the current deposition process such that the first distance (the distance between the electrode plate on the gas inlet side and the susceptor) is smaller than the second distance (the distance between the electrode plate on the gas outlet side and the susceptor); and
And in the formation stage of each deposition layer, introducing reaction gas into the reaction cavity through the gas inlet so as to form the deposition layer on the surface of the wafer.
It should be noted that in this document relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Embodiments in accordance with the present invention, as described above, are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (9)
1. A thin film deposition apparatus comprising:
the reaction cavity is provided with an air inlet and an air outlet;
The electrode plate is arranged in the reaction cavity; and
The base is arranged in the reaction cavity and provided with a bearing surface for bearing the wafer, and the bearing surface is arranged opposite to the electrode plate;
the first end of the electrode plate and the first end of the base are arranged adjacent to the air inlet, and the second end of the electrode plate and the second end of the base are arranged adjacent to the air outlet, so that air flows out from the air inlet to the air outlet through an air flow channel between the electrode plate and the base;
The distance between the first end of the electrode plate and the first end of the base is a first distance; the distance between the second end of the electrode plate and the second end of the base is a second distance, and the first distance is smaller than the second distance; the distance difference between the first distance and the second distance is set according to a deposition system Cheng Heba Shen Dingli so as to make the thickness of a deposition layer on each part of the surface of the wafer uniform;
The first end of the electrode plate and/or the second end of the electrode plate are/is connected with a driving unit, and the driving unit is used for driving the first end of the electrode plate and/or the second end of the electrode plate to approach or be far away from the base.
2. The thin film deposition apparatus as claimed in claim 1, wherein the susceptor comprises a heating device provided at the carrying surface for heating the wafer.
3. The thin film deposition apparatus as claimed in claim 1, wherein a bearing surface of the susceptor is disposed horizontally with one of the electrode plates, and a bearing surface of the susceptor is disposed obliquely with the other of the electrode plates; or the bearing surface of the base and the electrode plate are obliquely arranged.
4. The thin film deposition apparatus as claimed in claim 1, wherein the susceptor is connected to the driving unit for driving the susceptor toward or away from the electrode plate.
5. The thin film deposition apparatus as claimed in claim 4, wherein the first end of the base is fixed, and the driving unit is connected to the second end of the base; the second end of the base is close to or far away from the second end of the upper electrode plate of the electrode plate under the drive of the drive unit.
6. The thin film deposition apparatus according to claim 1, wherein the thin film deposition apparatus further comprises:
And the control unit is used for providing a driving signal to the driving unit so as to control the first distance and/or the second distance.
7. The thin film deposition apparatus of claim 6, wherein the thin film deposition apparatus is configured to perform at least one deposition process, the control unit being configured to: before each deposition process starts, providing the corresponding driving signal to adjust the first distance and/or the second distance so that:
the first distance corresponding to the subsequent deposition process is different from the first distance corresponding to the previous deposition process, and/or,
The second distance corresponding to the subsequent deposition process is different from the second distance corresponding to the previous deposition process.
8. The thin film deposition apparatus according to claim 6, wherein the driving unit comprises a stepping motor that adjusts the first distance and/or the second distance in a stepwise manner.
9. A deposition method applied to the thin film deposition apparatus according to any one of claims 1 to 8, comprising:
before forming at least one deposition layer, adjusting the electrode plate and/or the susceptor according to a current deposition process such that the first distance is smaller than the second distance; and
And in the formation stage of each deposition layer, introducing reaction gas into the reaction cavity through the gas inlet so as to form the deposition layer on the surface of the wafer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20090106710A (en) * | 2008-04-07 | 2009-10-12 | 삼성전기주식회사 | Chemical vapor deposition apparatus |
| CN107614751A (en) * | 2015-05-26 | 2018-01-19 | 株式会社日本制钢所 | atomic layer growth device |
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| NL6917985A (en) * | 1969-11-29 | 1971-06-02 | ||
| KR100319494B1 (en) * | 1999-07-15 | 2002-01-09 | 김용일 | Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process |
| TW460612B (en) * | 2000-01-06 | 2001-10-21 | United Microelectronics Corp | Method and device for adjusting the thickness uniformity of deposition layer |
| US20110247556A1 (en) * | 2010-03-31 | 2011-10-13 | Soraa, Inc. | Tapered Horizontal Growth Chamber |
| KR101490993B1 (en) * | 2012-12-31 | 2015-02-06 | 박형상 | Vapor deposition apparatus using vertical plate heater |
| TWI635539B (en) * | 2017-09-15 | 2018-09-11 | 金巨達國際股份有限公司 | High-k dielectric layer, manufacturing method thereof and multi-function device for performing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20090106710A (en) * | 2008-04-07 | 2009-10-12 | 삼성전기주식회사 | Chemical vapor deposition apparatus |
| CN107614751A (en) * | 2015-05-26 | 2018-01-19 | 株式会社日本制钢所 | atomic layer growth device |
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