CN117334655A - Low-porosity interface structure applying silver sintering soldering lug and preparation method - Google Patents
Low-porosity interface structure applying silver sintering soldering lug and preparation method Download PDFInfo
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- CN117334655A CN117334655A CN202311276313.5A CN202311276313A CN117334655A CN 117334655 A CN117334655 A CN 117334655A CN 202311276313 A CN202311276313 A CN 202311276313A CN 117334655 A CN117334655 A CN 117334655A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 86
- 239000004332 silver Substances 0.000 title claims abstract description 86
- 238000005476 soldering Methods 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000005245 sintering Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 238000003466 welding Methods 0.000 claims abstract description 29
- 239000002086 nanomaterial Substances 0.000 claims abstract 2
- 239000002245 particle Substances 0.000 claims description 25
- 238000004806 packaging method and process Methods 0.000 claims description 20
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000007731 hot pressing Methods 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 11
- 239000001856 Ethyl cellulose Substances 0.000 claims description 10
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 10
- 229920001249 ethyl cellulose Polymers 0.000 claims description 10
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 10
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000002052 molecular layer Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 238000009210 therapy by ultrasound Methods 0.000 claims description 6
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- ZXNKRXWFQRLIQG-UHFFFAOYSA-N silicon(4+);tetraborate Chemical compound [Si+4].[Si+4].[Si+4].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] ZXNKRXWFQRLIQG-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000004100 electronic packaging Methods 0.000 abstract description 2
- 239000013067 intermediate product Substances 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 10
- 239000003292 glue Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 102100029133 DNA damage-induced apoptosis suppressor protein Human genes 0.000 description 2
- 101000918646 Homo sapiens DNA damage-induced apoptosis suppressor protein Proteins 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RJIWZDNTCBHXAL-UHFFFAOYSA-N nitroxoline Chemical compound C1=CN=C2C(O)=CC=C([N+]([O-])=O)C2=C1 RJIWZDNTCBHXAL-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000001132 ultrasonic dispersion Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention belongs to the field of electronic packaging, and discloses a low-porosity interface structure applying silver sintering soldering lug and a preparation method thereof. The invention relates to the preparation of a welding interface with low porosity and high thermal conductivity, firstly, sputtering reaction is carried out on a soldering lug to obtain a silver soldering lug with a micro-nano structure on the surface, and the silver soldering lug is connected with an intermediate product of a copper-clad ceramic substrate and a chip, so that the silver soldering lug has the characteristics of better reliability and bonding effect.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a low-porosity interface structure applying silver sintering soldering lug and a preparation method thereof.
Background
With the development of the technology level, the requirements of the IGBT high-power device on power output are higher and higher, so that the heat dissipation of the power device is particularly important, a welding layer is used as a welding core of a power chip and a heat dissipation substrate, the requirements on thermal resistance and reliability of the high-power device are higher, however, when the traditional soldering paste is used for welding, the insufficient push-pull force, the low welding efficiency, the insufficient reliability and other problems are caused due to more false welding results, and the search for better welding materials for replacing the soldering paste and the silver film is particularly important, so that the invention designs a low-porosity interface structure applying the silver sintering soldering lug and a preparation method.
Disclosure of Invention
The invention aims to provide a low-porosity interface structure applying silver sintering soldering lug and a preparation method thereof, so as to solve the problems in the background art.
In order to solve the technical problems, the invention provides the following technical scheme:
the preparation method of the low-porosity interface structure using the silver sintering soldering lug comprises the following steps:
more preferably, the low porosity interface structure comprises a chip, a silver soldering lug and a copper-clad ceramic substrate, wherein the chip is welded on the copper-clad ceramic substrate through the silver soldering lug.
More optimally, the surfaces of the two sides of the silver soldering piece are coated with nano silver paste.
More preferably, the coating thickness of the silver paste layer is 5-10 mu m, and the thickness of the silver soldering piece is 15-60 mu m.
More optimally, the preparation steps of the nano silver paste are as follows: and adding nano silver particles into diethylene glycol diethyl ether acetate solution, uniformly dispersing by ultrasonic, mixing with ethyl cellulose and N-N-dimethyl pyrrolidone, and uniformly dispersing by ultrasonic to obtain nano silver paste.
More optimally, the dosages of each component are as follows: 1 to 5 parts of nano silver particles, 0.1 to 0.5 part of diethylene glycol diethyl ether acetate, 0.05 to 0.2 part of ethyl cellulose and 0.1 to 0.5 part of N-N-dimethyl pyrrolidone.
More preferably, the silver soldering flake comprises a silver flake and micro-nano layers on two side surfaces, whereinThe components of the surface micro-nano layer are Ag 2 CO 3 、Ag 2 O, agO.
More optimally, the thickness of the silver flake is 0.01-0.05 mm, the thickness of the surface micro-nano layer is 2-10 mu m, the structural size of the surface micro-nano layer is 10-800 nm, and the gap distance of the surface micro-nano layer structure is 100-1500 nm.
A preparation method of a low-porosity interface structure using a silver sintering soldering lug is characterized by comprising the following steps: the method comprises the following steps:
s1: taking the copper-clad ceramic substrate, carrying out ultrasonic treatment on the surface by using ethanol, taking out and drying, uniformly mixing diethylene glycol and butyl ether acetate, putting the copper-clad ceramic substrate into the soaking, taking out and drying;
s2: placing the coated silver soldering lug between the required chip and the copper-clad ceramic substrate to obtain a structure of the chip, the silver soldering lug and the copper-clad ceramic substrate from top to bottom, preheating a system, keeping the hot pressing pressure at 5-10 MPa under vacuum, heating to 120-160 ℃ at a constant rate, carrying out hot pressing, keeping for 5-8 min, continuously heating to 200-230 ℃, keeping the temperature for 1-20 min, and cooling to obtain a high-density welding packaging chip structure;
s3: and (3) carrying out curing slicing treatment on the high-density welding packaging chip structure: taking epoxy resin, silicon borate and silicone according to the volume ratio of 40:1:1, pouring the mixture on a high-density welding packaging chip after uniformly stirring, and solidifying for 10-24 min to obtain the chip with the low-porosity interface structure.
More optimally, the surfaces of both sides of the silver soldering lug are coated with nano silver paste, the preparation steps of the nano silver paste are that nano silver particles are taken, added into diethylene glycol diethyl ether acetate solution for even ultrasonic dispersion, and then mixed with ethyl cellulose and N-N-dimethyl pyrrolidone for even ultrasonic dispersion to obtain nano silver paste;
more preferably, the silver soldering lug is prepared by the following steps: taking silver flake as base material, vacuumizing to vacuum degree of 1-4×10-3pa, introducing reaction gas to regulate pressure to 2×10 -1 And performing magnetron sputtering on the surface of the silver sheet at the temperature of between 80 and 100 ℃ under Pa for 15 to 80 minutes, wherein the target material is a high-purity silver target.
More optimally, the reaction gas is argon-oxygen mixed gas, and the ratio of oxygen to argon is controlled to be 1:1-1:5.
More preferably, the silver soldering lug is prepared by the following steps: preparing sodium hydroxide solution with the mass concentration of 0.3-1.2 mol/L as electrolyte, washing and drying the surface of silver flake, connecting with the anode of the electrode, maintaining the temperature of the electrolyte at 25-35 ℃ and the current density at 1.5-6A/dm, electrifying for 30 s-5 min, taking out, washing and drying
Compared with the prior art, the invention has the following beneficial effects:
(1) The novel silver sintered soldering lug after surface treatment is provided, a more excellent silver soldering lug welding mode is adopted between the copper-clad ceramic substrate and the chip, so that the falling phenomenon caused by the traditional soldering paste is avoided, meanwhile, the welding efficiency between the substrate and the chip is improved, the push-pull force is improved, the reliability of a welding system is enhanced, and the performance of a power device is fully exerted;
(2) The invention provides a low-temperature low-pressure high-efficiency silver sintering process, wherein the welding between a chip and a substrate is realized by melting welding spots, the step of heating welding is needed in the subsequent process of actual production, the remelting phenomenon is easy to occur between the chip and the substrate, and the problem of increased brittleness of solder is caused to cause the failure of a soldering lug;
(3) The method for connecting the nano silver on the surface of the silver sintering soldering lug with the interface of the chip and the substrate is provided, polymerization of silver powder particles is avoided, when the sintering temperature exceeds 210 ℃, the organic additive of the silver powder in an oxygen environment volatilizes due to high-temperature decomposition, no impurity phase is generated, the nano silver sintering has good thermal conductivity, and is suitable for packaging high-power devices, the stability and the service life of the devices are improved, the thermal stress is reduced in the low-temperature sintering process, and the reliability of the packaging is improved.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a plan view of a die bonding plan view;
FIG. 2 is a perspective view of a die bond;
FIG. 3 is a diagram showing the morphology of the solder layer and the chip surface after the silver paste is coated on the silver solder sheet and before thermocompression bonding in the embodiment 4 in the step S4;
FIG. 4 is a diagram showing the morphology of the solder layer and the chip surface after the thermocompression bonding in the step S5 in the embodiment 4;
FIG. 5 is a diagram showing the surface structure of the solder layer and the lower substrate before thermocompression bonding after coating the silver paste on the silver solder sheet in the step S4 in the embodiment 4;
FIG. 6 is a surface structure pattern of the solder layer and the lower substrate after the thermocompression bonding in the step S5 in the embodiment 4;
fig. 7 is a diagram of a solder layer and a chip Scanning Electron Microscope (SEM) after the welding in step S5 in example 4.
In the figure: 101-copper-clad ceramic substrate, 102-silver soldering lug, 103-chip, 104-copper metal layer and 105-ceramic layer.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The following chemicals were used in the examples:
nano silver particles: the particle size of the Chinese and Noxin materials is 80nm and 50g of the Chinese and Noxin materials are filled; ethyl cellulose: microphone, E809013-500g; silver flake (homemade): thickness 10-60 μm, size: 30-100 mm multiplied by 20-100 mm; epoxy resin: cargo number: LY0108854, model: resin-084, gallery created environmental protection technology limited.
The serial numbers and the structural position relations in the drawings of the specification are as follows: the chip 103 is soldered to one surface of the silver solder sheet 102, the copper metal layer 104 is thermally pressed against the ceramic layer 105, and the other surface of the silver solder sheet 102 is soldered to the thermally pressed ceramic layer 105.
The following components in parts by mass:
example 1:
s1: taking silver flake as base material, high purity silver target as target material, vacuumizing to vacuum degree of 3×10 -3 pa；
S2: introducing oxygen and argon, wherein the ratio of oxygen to argon is 1:5, and regulating and controlling the pressure to be 2 multiplied by 10 -1 Pa；
S2: heating to 100 ℃, and performing magnetron sputtering on the surface of the silver sheet, wherein the power of a sputtering direct current power supply is 400w, and the sputtering time is 60min;
s4: and closing the pump group after sputtering, and taking out after pressure balance to obtain the silver soldering lug 102.
Example 2:
s1: preparing sodium hydroxide solution with the mass concentration of 1.0mol/L as electrolyte;
s2: cleaning the surface of the silver flake by using pure water and ethanol, and drying at 70 ℃;
s3: and (3) connecting the dried silver flakes with an electrode anode, keeping the temperature of the electrolyte at 30 ℃ and the current density at 6A/dm, electrifying for 3min, and taking out, cleaning and drying to obtain the silver soldering flakes 102.
Example 3:
s1: taking the copper-clad ceramic substrate 101, carrying out ultrasonic treatment on the surface by using ethanol, taking out and drying, uniformly mixing diethylene glycol and butyl ether acetate, putting the copper-clad ceramic substrate 101 into the soaking state, taking out and drying;
s2: placing the silver soldering lug 102 prepared in the embodiment 1 between the chip 103 and the copper-clad ceramic substrate 101 to obtain a structure of the chip 103, the silver soldering lug 102 and the copper-clad ceramic substrate 101 from top to bottom, preheating, keeping the hot pressing pressure at 5MPa under vacuum, heating to 160 ℃ at a constant rate, hot pressing, keeping for 8min, continuously heating to 220 ℃, preserving heat for 15min, and cooling to obtain a high-density soldering packaging chip structure;
s3: and (3) carrying out curing slicing treatment on the high-density welding packaging chip structure: and taking the curing glue A, B, C, uniformly stirring, pouring the curing glue on the high-density welding packaging chip, and curing for 20min to obtain the chip 103.
Example 4:
s1: taking the silver soldering tab 102 prepared in the embodiment 1 for standby;
s2: taking the copper-clad ceramic substrate 101, carrying out ultrasonic treatment on the surface by using ethanol, taking out and drying, uniformly mixing diethylene glycol and butyl ether acetate, putting the copper-clad ceramic substrate 101 into the soaking state, taking out and drying;
s3: taking 3 parts of nano silver particles, adding the nano silver particles into 0.3 part of diethylene glycol diethyl ether acetate solution, uniformly dispersing the nano silver particles by ultrasonic, mixing the nano silver particles with 0.15 part of ethyl cellulose and 0.4 part of N-N-dimethyl pyrrolidone, and uniformly dispersing the nano silver particles by ultrasonic to obtain nano silver slurry;
s4: coating the prepared nano silver paste on the surface of the silver soldering lug 102 to obtain a silver soldering lug 102 coated with the silver paste;
s5: placing the coated silver soldering lug 102 between the required chip 103 and the copper-clad ceramic substrate 101 to obtain a structure of the chip 103, the silver soldering lug 102 and the copper-clad ceramic substrate 101 from top to bottom, preheating, keeping the hot pressing pressure at 5MPa under vacuum, heating to 160 ℃ at a constant rate, hot pressing, keeping for 8min, continuously heating to 220 ℃, preserving heat for 15min, and cooling to obtain a high-density soldering packaging chip structure;
s6: and (3) carrying out curing slicing treatment on the high-density welding packaging chip structure: and taking the curing glue A, B, C, uniformly stirring, pouring the curing glue on the high-density welding packaging chip, and curing for 20 minutes to obtain the chip 103 with the low-porosity interface structure.
Example 5:
s1: taking the silver soldering tab 102 prepared in the embodiment 2 for standby;
s2: taking the copper-clad ceramic substrate 101, carrying out ultrasonic treatment on the surface by using ethanol, taking out and drying, uniformly mixing diethylene glycol and butyl ether acetate, putting the copper-clad ceramic substrate 101 into the soaking state, taking out and drying;
s3: taking 3 parts of nano silver particles, adding the nano silver particles into 0.3 part of diethylene glycol diethyl ether acetate solution, uniformly dispersing the nano silver particles by ultrasonic, mixing the nano silver particles with 0.15 part of ethyl cellulose and 0.4 part of N-N-dimethyl pyrrolidone, and uniformly dispersing the nano silver particles by ultrasonic to obtain nano silver slurry;
s4: coating the prepared nano silver paste on the surface of the silver soldering lug 102 to obtain a silver soldering lug 102 coated with the silver paste;
s5: placing the coated silver soldering lug 102 between the required chip 103 and the copper-clad ceramic substrate 101 to obtain a structure of the chip 103, the silver soldering lug 102 and the copper-clad ceramic substrate 101 from top to bottom, preheating, keeping the hot pressing pressure at 5MPa under vacuum, heating to 160 ℃ at a constant rate, hot pressing, keeping for 8min, continuously heating to 220 ℃, preserving heat for 15min, and cooling to obtain a high-density soldering packaging chip structure;
s6: and (3) carrying out curing slicing treatment on the high-density welding packaging chip structure: and taking the curing glue A, B, C, uniformly stirring, pouring the curing glue on the high-density welding packaging chip, and curing for 20 minutes to obtain the chip 103 with the low-porosity interface structure.
Comparative example 1: the infiltration step of the copper-clad ceramic substrate 101 was omitted on the basis of example 4:
s1: taking the silver soldering tab 102 prepared in the embodiment 1 for standby;
s2: taking the copper-clad ceramic substrate 101, carrying out ultrasonic treatment on the surface by using ethanol, taking out and drying;
s3: taking 3 parts of nano silver particles, adding the nano silver particles into 0.3 part of diethylene glycol diethyl ether acetate solution, uniformly dispersing the nano silver particles by ultrasonic, mixing the nano silver particles with 0.15 part of ethyl cellulose and 0.4 part of N-N-dimethyl pyrrolidone, and uniformly dispersing the nano silver particles by ultrasonic to obtain nano silver slurry;
s4: coating the prepared nano silver paste on the surface of the silver soldering lug 102 to obtain a silver soldering lug 102 coated with the silver paste;
s5: placing the coated silver soldering lug 102 between the required chip 103 and the copper-clad ceramic substrate 101 to obtain a structure of the chip 103, the silver soldering lug 102 and the copper-clad ceramic substrate 101 from top to bottom, preheating a system, keeping the hot pressing pressure at 5MPa under vacuum, heating to 160 ℃ at a constant rate, hot pressing the silver soldering lug 102, keeping the temperature for 8min, continuously heating to 220 ℃, preserving the temperature for 15min, and cooling to obtain a high-density welding packaging chip structure;
s6: and (3) carrying out curing slicing treatment on the high-density welding packaging chip structure: and taking the curing glue A, B, C, uniformly stirring, pouring the curing glue on the high-density welding packaging chip, and curing for 20 minutes to obtain the chip 103 with the low-porosity interface structure.
Experiment: cutting and grinding the prepared chip with the low-porosity interface structure from 400 meshes to 20000 meshes, grinding the chip with the low-porosity interface structure by using an ion mill until the surface is free of scratches after a small amount of scratches appear on the surface, and observing the interface morphology state of the chip with a scanning electron microscope, including but not limited to porosity, the surface state of a bonding layer and the like. And the combination condition, porosity and density condition of the nano or submicron silver layer on the surface of the soldering lug and the surface of the chip and the lower substrate are mainly observed.
| Porosity/% | |
| Example 3 | ≈5 |
| Example 4 | ≈4 |
| Example 5 | ≈3 |
| Comparative example 1 | ≈8 |
Conclusion:
the conclusion of the silver sheet surface coating particles in the implementation case and the comparison case is not very different from that of the silver sheet surface electrolytic oxidation soldering lug, and the current soldering requirement is met.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A low porosity interface structure employing silver sintered lugs, characterized by: the low-porosity interface structure comprises a chip (103), a silver soldering lug (102) and a copper-clad ceramic substrate (101), wherein the chip (103) is welded on the copper-clad ceramic substrate (101) through the silver soldering lug (102).
2. A low porosity interface structure using silver sintered tabs as claimed in claim 1, wherein: the surfaces of the two sides of the silver soldering lug (102) are coated with nano silver paste, the coating thickness of the silver paste layer is 5-10 mu m, and the thickness of the silver soldering lug (102) is 15-60 mu m.
3. A low porosity interface structure using silver sintered tabs as claimed in claim 1, wherein: the preparation method of the nano silver paste comprises the following steps: and adding nano silver particles into diethylene glycol diethyl ether acetate solution, uniformly dispersing by ultrasonic, mixing with ethyl cellulose and N-N-dimethyl pyrrolidone, and uniformly dispersing by ultrasonic to obtain nano silver paste.
4. A low porosity interface structure using silver sintered tabs as claimed in claim 3, wherein: the dosage of each component is as follows: 1 to 5 parts of nano silver particles, 0.1 to 0.5 part of diethylene glycol diethyl ether acetate, 0.05 to 0.2 part of ethyl cellulose and 0.1 to 0.5 part of N-N-dimethyl pyrrolidone.
5. A low porosity surface structure using silver sintered bonding pads according to claim 1, wherein: the silver soldering piece (102) comprises a silver piece and micro-nano layers on two sides, wherein the components of the surface micro-nano layers are Ag 2 CO 3 、Ag 2 O, agO.
6. A low porosity surface structure for silver sintered lugs as in claim 5, wherein: in the silver soldering flake with the micro-nano structure on the surface, the thickness of the silver flake is 0.01-0.05 mm, the thickness of the surface micro-nano layer is 2-10 mu m, the structure size of the surface micro-nano layer is 10-800 nm, and the gap distance of the surface micro-nano layer structure is 100-1500 nm.
7. A preparation method of a low-porosity interface structure using a silver sintering soldering lug is characterized by comprising the following steps: the method comprises the following steps:
s1: taking a copper-clad ceramic substrate (101), carrying out ultrasonic treatment on the surface by using ethanol, taking out and drying, uniformly mixing diethylene glycol and butyl ether acetate, putting the copper-clad ceramic substrate (101) into the soaking state, taking out and drying;
s2: placing the coated silver soldering lug (102) between a required chip (103) and a copper-clad ceramic substrate (101) to obtain a structure which is the chip (103), the silver soldering lug (102) and the copper-clad ceramic substrate (101) from top to bottom, preheating a system, keeping the hot pressing pressure at 5-10 MPa under vacuum condition, heating to 120-160 ℃ at a constant rate, carrying out hot pressing, keeping for 5-8 min, continuously heating to 200-230 ℃, keeping the temperature for 1-20 min, and cooling to obtain a high-density welding packaging chip structure;
s3: and (3) carrying out curing slicing treatment on the high-density welding packaging chip structure: taking epoxy resin, silicon borate and silicone according to the volume ratio of 40:1:1, uniformly stirring, pouring the mixture onto a high-density welding packaging chip (103), and solidifying for 10-24 min to obtain the chip (103) with the low-porosity interface structure.
8. The method for preparing the low-porosity interface structure using the silver sintered soldering lug as claimed in claim 7, wherein: the surfaces of the two sides of the silver soldering lug (102) are coated with nano silver paste, and the preparation steps of the nano silver paste are as follows: and adding nano silver particles into diethylene glycol diethyl ether acetate solution, uniformly dispersing by ultrasonic, mixing with ethyl cellulose and N-N-dimethyl pyrrolidone, and uniformly dispersing by ultrasonic to obtain nano silver paste.
9. The method for preparing the low-porosity interface structure using the silver sintered soldering lug as claimed in claim 7, wherein: the silver soldering lug (102) is prepared by the following steps: taking silver flake as a base material, taking a high-purity silver target as a target material, and vacuumizing until the vacuum degree is 1-4 multiplied by 10 -3 pa, introducing an oxygen-argon mixed gas with an oxygen-argon ratio of 1:1-1:5, and regulating and controlling the pressure to be 2 multiplied by 10 -1 And performing magnetron sputtering on the surface of the silver sheet at the temperature of between 80 and 100 ℃ under Pa for 15 to 80 minutes.
10. The method for preparing the low-porosity interface structure using the silver sintered soldering lug as claimed in claim 7, wherein: the silver soldering lug (102) is prepared by the following steps: the sodium hydroxide solution with the mass concentration of 0.3-1.2 mol/L is used as electrolyte, the surface of the silver flake is washed and dried, the silver flake is connected with the anode of the electrode, the temperature of the electrolyte is kept at 25-35 ℃, the current density is 1.5-6A/dm, and the silver flake is taken out, washed and dried after being electrified for 30 s-5 min.
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