CN117316811A - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
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- CN117316811A CN117316811A CN202311021067.9A CN202311021067A CN117316811A CN 117316811 A CN117316811 A CN 117316811A CN 202311021067 A CN202311021067 A CN 202311021067A CN 117316811 A CN117316811 A CN 117316811A
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- input port
- wafer cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
技术领域Technical field
本发明涉及晶圆加工技术领域，尤其涉及一种晶圆清洗装置。The present invention relates to the technical field of wafer processing, and in particular to a wafer cleaning device.
背景技术Background technique
目前现有的晶圆清洗药液混和、浓度调整及温度调整机构，皆在设备供应槽或混合槽，或厂务动力端的混和槽内进行混合调配。Currently, the existing wafer cleaning liquid mixing, concentration adjustment and temperature adjustment mechanisms are all mixed and prepared in the equipment supply tank or mixing tank, or in the mixing tank at the power end of the factory.
现有的调和方式，对于制程的对应能力不佳，当金属离子或是金属硅化物残留过多时，无法及时调整药液搭配。现有技术的缺陷具体包括：The existing blending method has poor response to the manufacturing process. When there are too many metal ions or metal silicides remaining, the liquid mix cannot be adjusted in time. Defects of the existing technology specifically include:
1.新药液的供应于设备稼动，影响甚大。1. The supply of new liquid medicine has a great impact on equipment operation.
2.新药液的测试，对于制程工艺调整时间过长，及调整参数无法细化。2. For the testing of new chemical solutions, the process adjustment time is too long, and the adjustment parameters cannot be refined.
3.新药液的测试，对于药液使用量过于浪费，增加制造成本。3. The testing of new medicinal solutions wastes too much on the amount of medicinal solution used and increases manufacturing costs.
4.药液的搭配及浓度，无法随APC(工厂监控数据)实时调整。4. The combination and concentration of the medicinal solution cannot be adjusted in real time with APC (factory monitoring data).
发明内容Contents of the invention
本发明提供了一种晶圆清洗装置，包括喷嘴，所述喷嘴包括喷嘴本体，所述喷嘴本体设有至少两个输入口，在输入口位置设有流量控制阀。The invention provides a wafer cleaning device, which includes a nozzle. The nozzle includes a nozzle body. The nozzle body is provided with at least two input ports, and a flow control valve is provided at the input port position.
作为本发明的进一步改进，所述喷嘴本体内部设有螺纹。As a further improvement of the present invention, the nozzle body is provided with threads inside.
作为本发明的进一步改进，所述喷嘴本体内部设有温度控制模块，所述温度控制模块用于对药液的温度进行控制。As a further improvement of the present invention, a temperature control module is provided inside the nozzle body, and the temperature control module is used to control the temperature of the chemical liquid.
作为本发明的进一步改进，所述流量控制阀为两个，两个流量控制阀分别为第一流量控制阀和第二流量控制阀，所述输入口为两个，两个输入口分别为第一输入口和第二输入口，所述第一流量控制阀安装在所述第一输入口位置处，所述第二流量控制阀安装在所述第二输入口位置处。As a further improvement of the present invention, there are two flow control valves, and the two flow control valves are a first flow control valve and a second flow control valve respectively. There are two input ports, and the two input ports are respectively a first flow control valve and a second flow control valve. An input port and a second input port, the first flow control valve is installed at the first input port position, and the second flow control valve is installed at the second input port position.
作为本发明的进一步改进，药液经由所述第一输入口和第二输入口流入所述喷嘴本体内部，所述药液由两种溶液混合而成，第一种溶液为酸液或碱液，第二种溶液为去离子水。As a further improvement of the present invention, the medical liquid flows into the inside of the nozzle body through the first input port and the second input port. The medical liquid is mixed with two solutions, and the first solution is an acid solution or an alkali solution. , the second solution is deionized water.
作为本发明的进一步改进，第一种溶液为硝酸和氢氟酸。As a further improvement of the present invention, the first solution is nitric acid and hydrofluoric acid.
作为本发明的进一步改进，药液经由所述第一输入口和第二输入口流入所述喷嘴本体内部，所述药液由两种溶液混合而成，第一种溶液为盐酸或氨水，第二种溶液为过氧化氢。As a further improvement of the present invention, the medical liquid flows into the inside of the nozzle body through the first input port and the second input port. The medical liquid is mixed with two solutions. The first solution is hydrochloric acid or ammonia water, and the second solution is hydrochloric acid or ammonia. The two solutions are hydrogen peroxide.
作为本发明的进一步改进，晶圆由硅材料制成，硝酸与硅反应成SiO2，SiO2再被氢氟酸反应成氟硅酸溶解于水中，药液的质量百分比为：硝酸68.9％、氢氟酸0.8％、去离子水30.3％。As a further improvement of the present invention, the wafer is made of silicon material, nitric acid reacts with silicon to form SiO2, and SiO2 is reacted with hydrofluoric acid to form fluorosilicic acid and is dissolved in water. The mass percentage of the liquid is: nitric acid 68.9%, hydrofluoric acid Acid 0.8%, deionized water 30.3%.
作为本发明的进一步改进，盐酸+过氧化氢的水溶液的标准配比为HCl/H2O2/H2O，比例为：1:1:6至1:2:8。As a further improvement of the present invention, the standard ratio of the aqueous solution of hydrochloric acid + hydrogen peroxide is HCl/H2O2/H2O, and the ratio is: 1:1:6 to 1:2:8.
作为本发明的进一步改进，氨水+过氧化氢的水溶液的标准配比为NH4OH/H2O2/H2O，比例为：1:1:5至1:2:7。As a further improvement of the present invention, the standard ratio of ammonia+hydrogen peroxide aqueous solution is NH4OH/H2O2/H2O, and the ratio is: 1:1:5 to 1:2:7.
本发明的有益效果是：本发明的喷嘴可以快速对应不同制程及制程问题，同时协助新制程开发，缩短药液调配时间，减少药液测试用量，提高设备稼动比例，降低工程生产成本。The beneficial effects of the present invention are: the nozzle of the present invention can quickly respond to different processes and process problems, and at the same time assist the development of new processes, shorten the preparation time of medical solution, reduce the amount of medical solution testing, increase the equipment activation ratio, and reduce engineering production costs.
附图说明Description of drawings
图1是本发明的结构示意图。Figure 1 is a schematic structural diagram of the present invention.
具体实施方式Detailed ways
如图1所示，本发明公开了一种晶圆清洗装置，包括喷嘴，所述喷嘴包括喷嘴本体1，所述喷嘴本体1设有至少两个输入口，在输入口位置设有流量控制阀。As shown in Figure 1, the present invention discloses a wafer cleaning device, which includes a nozzle. The nozzle includes a nozzle body 1. The nozzle body 1 is provided with at least two input ports, and a flow control valve is provided at the input port position. .
所述喷嘴本体1内部设有螺纹。The nozzle body 1 is provided with threads inside.
所述喷嘴本体1内部设有温度控制模块，所述温度控制模块用于对药液的温度进行控制。可以藉由稳定化性的药液加热，混合不稳定化性的药液，通过温度控制模块在喷嘴本体1内快速的加热，达到精密的温度控制，减少药液蒸发量，及减少管路组件的消耗腐蚀。A temperature control module is provided inside the nozzle body 1, and the temperature control module is used to control the temperature of the chemical liquid. It is possible to heat the stabilizing liquid, mix the unstable liquid, and rapidly heat the nozzle body 1 through the temperature control module to achieve precise temperature control, reduce the evaporation of the liquid, and reduce the number of pipeline components. consumption corrosion.
作为喷嘴的优选实施例，所述流量控制阀为两个，两个流量控制阀分别为第一流量控制阀和第二流量控制阀，所述输入口为两个，两个输入口分别为第一输入口2和第二输入口3，所述第一流量控制阀安装在所述第一输入口2位置处，所述第二流量控制阀安装在所述第二输入口3位置处。As a preferred embodiment of the nozzle, there are two flow control valves, and the two flow control valves are a first flow control valve and a second flow control valve respectively. There are two input ports, and the two input ports are respectively a first flow control valve and a second flow control valve. An input port 2 and a second input port 3, the first flow control valve is installed at the first input port 2, and the second flow control valve is installed at the second input port 3.
作为本发明的一个实施例，药液经由所述第一输入口2和第二输入口3流入所述喷嘴本体1内部，所述药液由两种溶液混合而成，第一种溶液为酸液或碱液(例如，第一种溶液为硝酸和氢氟酸)，第二种溶液为去离子水。通过本发明的喷嘴，可以在晶圆清洗工艺前，以精密的流量控制阀的调配，达到特定浓度，晶圆由硅材料制成，硝酸(HNO3)与硅(Si)可以反应成SiO2，SiO2再被氢氟酸(HF)反应成氟硅酸(H2SiF6)溶解于水中带走，亦即硅表面可以被此药液反应而成倒角。在该实施例中，药液的质量百分比为：硝酸68.9％、HF0.8％、去离子水30.3％。As an embodiment of the present invention, the medical liquid flows into the inside of the nozzle body 1 through the first input port 2 and the second input port 3. The medical liquid is composed of two solutions, and the first solution is acid. liquid or alkaline solution (for example, the first solution is nitric acid and hydrofluoric acid), and the second solution is deionized water. Through the nozzle of the present invention, a specific concentration can be achieved by adjusting the precise flow control valve before the wafer cleaning process. The wafer is made of silicon material, and nitric acid (HNO3) and silicon (Si) can react to form SiO2, SiO2 It is then reacted with hydrofluoric acid (HF) to form fluorosilicic acid (H2SiF6), which is dissolved in water and taken away. That is, the silicon surface can be chamfered by the chemical reaction. In this embodiment, the mass percentages of the medical solution are: 68.9% nitric acid, 0.8% HF, and 30.3% deionized water.
作为本发明的另一个实施例，药液经由所述第一输入口2和第二输入口3流入所述喷嘴本体1内部，所述药液由两种溶液混合而成，第一种溶液为盐酸或氨水，第二种溶液为过氧化氢。氨水+过氧化氢的药液，该药液能够去除硅晶圆表面异物，氨水+过氧化氢的水溶液，一般称为SC1，标准配比为NH4OH/H2O2/H2O，比例为：1:1:5至1:2:7。盐酸+过氧化氢的药液，该药液能够去除硅晶圆表面金属离子，盐酸+过氧化氢的水溶液，一般称为SC2，标准配比为HCl/H2O2/H2O，比例为：1:1:6至1:2:8。通过本发明的喷嘴，可以在晶圆清洗工艺前，以精密的流量控制阀的调配，达到SC-1药液的特定浓度，以进行最佳洗净效果。As another embodiment of the present invention, the medical liquid flows into the inside of the nozzle body 1 through the first input port 2 and the second input port 3. The medical liquid is composed of two solutions, and the first solution is Hydrochloric acid or ammonia, and the second solution is hydrogen peroxide. Ammonia + hydrogen peroxide liquid, this liquid can remove foreign matter on the surface of silicon wafers. Ammonia + hydrogen peroxide aqueous solution, generally called SC1, the standard ratio is NH4OH/H2O2/H2O, the ratio is: 1:1: 5 to 1:2:7. Hydrochloric acid + hydrogen peroxide solution, this solution can remove metal ions on the surface of silicon wafers, hydrochloric acid + hydrogen peroxide aqueous solution, generally called SC2, the standard ratio is HCl/H2O2/H2O, the ratio is: 1:1 :6 to 1:2:8. Through the nozzle of the present invention, the specific concentration of the SC-1 chemical liquid can be achieved by adjusting the precise flow control valve before the wafer cleaning process to achieve the best cleaning effect.
因为本发明的喷嘴本体1内部设有螺纹，所以，当两种溶液进入喷嘴本体1内后，在螺纹的辅助下，两种溶液可以快速混合成药液。Because the nozzle body 1 of the present invention is provided with threads inside, when two solutions enter the nozzle body 1, the two solutions can be quickly mixed into a medicinal liquid with the assistance of the threads.
在本发明中，通过第一流量控制阀和第二流量控制阀能够控制第一种溶液和第二种溶液流入喷嘴本体1内部的流量，从而制成指定浓度的药液。In the present invention, the flow rate of the first solution and the second solution flowing into the interior of the nozzle body 1 can be controlled through the first flow control valve and the second flow control valve, thereby producing a medical solution with a specified concentration.
本发明的喷嘴，可以快速对应不同制程及制程问题，同时协助新制程开发，缩短药液调配时间，减少药液测试用量，提高设备稼动比例，降低工程生产成本。The nozzle of the present invention can quickly respond to different processes and process problems, and at the same time assists in the development of new processes, shortens the preparation time of medical solutions, reduces the amount of medical solution testing, increases the equipment activation ratio, and reduces engineering production costs.
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be concluded that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, and all of them should be regarded as belonging to the protection scope of the present invention.
Claims (10)
Priority Applications (1)
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| CN202311021067.9A CN117316811A (en) | 2023-08-14 | 2023-08-14 | Wafer cleaning device |
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| CN202311021067.9A CN117316811A (en) | 2023-08-14 | 2023-08-14 | Wafer cleaning device |
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Application publication date: 20231229 |