CN117250833A - Semiconductor chip photoresist cleaning solution, preparation method and application thereof - Google Patents
Semiconductor chip photoresist cleaning solution, preparation method and application thereof Download PDFInfo
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- CN117250833A CN117250833A CN202311148585.7A CN202311148585A CN117250833A CN 117250833 A CN117250833 A CN 117250833A CN 202311148585 A CN202311148585 A CN 202311148585A CN 117250833 A CN117250833 A CN 117250833A
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- semiconductor chip
- cleaning solution
- quaternary ammonium
- ammonium salt
- imidazoline
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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Abstract
The invention relates to a photoresist cleaning solution for a semiconductor chip, which comprises the following components in parts by weight: 0.1-0.6 part of composite functional agent; 0.02-0.1 parts of polyalcohol; 10-20 parts of sulfoxide; alcohol amine 10-20 parts; 20-30 parts of imidazolinone; 50-70 parts of imidazolidinone. The invention also discloses a preparation method and a use method of the photoresist cleaning solution. The compound functional agent has a longer chain structure, and can be effectively complexed on a metal electrode, thereby blocking the electrode and photoresist cleaning solution and solving the problem of insufficient corrosion inhibition capability of the conventional corrosion inhibitor. The azole compound in the composite functional agent can fill gaps generated on the electrode surface by long-chain alkyl quaternary ammonium salt imidazoline, prevent the cleaning liquid from contacting with the metal electrode, and effectively prevent the metal electrode from being corroded. The semiconductor chip photoresist cleaning solution has excellent corrosion inhibition effect on Cu and Al electrodes, is more stable, has no pollution to the environment, and has longer service life and excellent cleaning performance.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing processes, and particularly relates to a semiconductor chip photoresist cleaning solution, a preparation method and application thereof.
Background
In the field of semiconductor technology, for semiconductor chip products such as LED chips, power chips, radio frequency chips, communication chips, etc., substrates such as sapphire, silicon carbide, gallium nitride, gallium arsenide, germanium, etc. are generally adopted, and after the grinding and polishing process in the back-end manufacturing process of the substrate, the wax layer, polishing powder residues, polishing liquid residues, metal particles, etc. need to be cleaned and removed.
The post-stage process for manufacturing the semiconductor chip generally uses a cleaning liquid to complete the cleaning process, and the cleaned chip can enter the next stage process after being detected to be qualified. Therefore, the advantages and disadvantages of the cleaning effect have important influences on the success of the subsequent stage manufacturing and the performance and yield of the chip.
Therefore, in the technical field of semiconductor cleaning, strict requirements are set for the performance of cleaning liquid: the cleaning liquid not only can clean various pollutants on the chip, but also can not generate organic pollutants and/or back adhesion of metal particles; the electrode is not damaged, and the service life is good.
CN101295143B discloses a photoresist residue cleaning agent, which comprises a surfactant, ammonium fluoride salt, organic sulfonic acid, an organic solvent, a penetrating agent, a nitrogenous carboxylic acid, a corrosion inhibitor and pure water, and has good cleaning effect on wafers after dry stripping.
CN102147576B discloses a photoresist stripper composition, which consists of an organosilicon compound, an acrylic copolymer and an organic solvent, improves the solubility and the stripping property of photoresist, and solves the problems of residual photoresist or osmotic pollution.
The photoresist stripping solution disclosed in the above patent improves the cleaning effect, but has a certain corrosion to the metal electrode. Therefore, in the current chip cleaning field, there is still urgent need for a novel chip cleaning solution, and in particular, there is urgent need for a novel cleaning solution with no corrosion to metal electrodes, long service life, and the like, and further urgent industrial application.
Disclosure of Invention
The invention solves the technical problems that: the semiconductor chip cleaning liquid which does not corrode the chip substrate basically is provided, and particularly has excellent corrosion inhibition effect on Cu and Al electrodes. The cleaning liquid can not only completely remove the photoresist remained on the surface of the chip and has the efficacy of basically not corroding the surface pattern of the chip or the substrate body, but also can prevent the metal electrode from being corroded, improve the stability and prolong the service life.
In view of the technical problems in the prior art, the invention designs a semiconductor chip photoresist cleaning solution, and a preparation method and application thereof.
In order to solve the technical problems, the invention adopts the following scheme:
the photoresist cleaning solution for the semiconductor chip is characterized by comprising the following components in parts by weight:
further, the semiconductor chip photoresist cleaning solution is characterized by comprising the following components in parts by weight:
further, the compound functional agent is compounded by adopting alkyl quaternary ammonium salt imidazoline and an azole compound; the mass ratio of the alkyl quaternary ammonium salt imidazoline to the azole compound in the composite functional agent is 5-10:3;
wherein, the alkyl quaternary ammonium salt imidazoline is preferably long-chain alkyl quaternary ammonium salt imidazoline.
Further, the alkyl quaternary ammonium salt imidazoline is preferably C7-18 alkyl quaternary ammonium salt imidazoline, and the alkyl quaternary ammonium salt imidazoline is selected from one or more of aryloxy methylene imidazoline quaternary ammonium salt, naphthoxy methylene imidazoline quaternary ammonium salt, heptadecenyl amine ethyl imidazoline quaternary ammonium salt and hexadecyl imidazoline quaternary ammonium salt;
the nitrogen azole compound is selected from one or more of 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 5-amino-tetrazole, 3, 5-diamino-1, 2, 4-triazole, 2-aminoimidazole, 2-aminobenzimidazole, diaminobenzimidazole, 2-aminothiazole, 2-aminobenzothiazole, 2-aminooxazole, 2-aminobenzoxazole, 3-aminopyrazole, 3-aminocarbazole, 6-aminoindazole, 2-amino-1, 3, 4-thiadiazole and 5-amino-1, 2, 3-thiadiazole.
Further, the polyol is selected from the group consisting of C4-C6 polyols;
the sulfoxide is selected from linear sulfoxide;
the alcohol amine is selected from one or more of diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, ethanolamine and ethyldiethanolamine;
the imidazolone is selected from one or more of 1, 3-dimethyl-2-imidazolone, 1-methyl-2-imidazolone, 4-phenyl-2-imidazolone, 1-isopropyl-2-imidazolone and 1-tert-butyl-2-imidazolone;
the imidazolidone is alkyl imidazolidone.
Further, the polyhydric alcohol is preferably xylitol, talitol, sorbitol or mannitol;
the sulfoxide is preferably one or more of ethyl methyl sulfoxide, diethyl sulfoxide and dimethyl sulfoxide;
the alcohol amine is preferably propanolamine or isopropanolamine;
the imidazolone is preferably methylimidazolone;
the imidazolidone is selected from one or more of 1, 3-dimethyl-2-imidazolidone, 2-imidazolidone and 2-tertiary butyl-3-methyl-5-benzyl-4-imidazolidone.
Further, the polyol is most preferably sorbitol;
the sulfoxide is most preferably dimethyl sulfoxide;
most preferably, the alcohol amine is isopropanolamine;
the imidazolinone is most preferably 1, 3-dimethyl-2-imidazolinone;
the imidazolidone is most preferably 1, 3-dimethyl-2-imidazolidone.
The invention also discloses a preparation method of the photoresist cleaning solution for the semiconductor chip, which is characterized by comprising the following steps:
step 1: weighing each component with each dosage;
step 2: and adding all components except the composite functional agent into a container at the temperature of 25-30 ℃, stirring for 10-20min until all materials are completely mixed, adding the composite functional agent while stirring, and continuing stirring for 10-20min until the components are uniform and transparent, thus obtaining the semiconductor chip photoresist cleaning solution.
The invention also discloses a using method of the photoresist cleaning solution for the semiconductor chip, which is characterized by comprising the following steps:
step 1: soaking the semiconductor chip in the photoresist cleaning solution of the semiconductor chip at the temperature of 70-90 ℃ for 10-30min;
step 2: washing the semiconductor chip washed in the step 1 by deionized water, soaking the semiconductor chip in ethanol or isopropanol for 5-10min, and drying the semiconductor chip by normal-temperature nitrogen to finish the washing of the semiconductor chip;
the cleaning in the step 1 can be one of dipping stripping cleaning, swinging stripping cleaning, single-wafer stripping cleaning, rotary stripping cleaning of a rotator and ultrasonic stripping cleaning;
wherein, the swinging stripping cleaning and ultrasonic stripping cleaning effects are optimal.
The invention also discloses application of the photoresist cleaning solution for the semiconductor chip to cleaning Cu and Al semiconductor chips.
In the present invention, the alkyl quaternary ammonium salt imidazoline is most preferably cetyl imidazoline quaternary ammonium salt.
In the present invention, the azole compound is most preferably 3-amino-1, 2, 4-triazole.
In the invention, the mass ratio of the alkyl quaternary ammonium salt imidazoline to the azole compound in the composite functional agent is 5-10:3.
In the invention, more preferably, the mass ratio of the alkyl quaternary ammonium salt imidazoline to the azole compound in the composite functional agent is 5:3.
In the invention, the alkyl quaternary ammonium salt imidazoline in the composite functional agent has a longer chain structure, can effectively prevent the cleaning liquid from contacting with the electrode after cleaning, and can prevent the electrode corrosion caused by Cu and Al; the azole compound has higher complexation and can fill gaps generated on the surface of the electrode by the alkyl quaternary ammonium salt imidazoline.
Therefore, the compound of the alkyl quaternary ammonium salt imidazoline and the azole compound in the compound functional agent can effectively prevent Cu and Al from generating electrode corrosion.
For example, when a Cu electrode is inhibited by adopting a hexadecyl imidazoline quaternary ammonium salt and 3-amino-1, 2, 4-triazole compound, the Cu electrode can be protected from corrosion.
The mass ratio of the imidazolone to the imidazolidinone is 2-3:5-7.
It should be noted that, in the present invention, unless otherwise specified, reference to the specific meaning of "comprising" as defined and described by the composition includes both the open meaning of "comprising", "including" and the like, and the closed meaning of "consisting of …" and the like.
The invention provides a semiconductor chip photoresist cleaning solution, a preparation method and application thereof, which have the following beneficial effects Fruit set：
(1) Compared with the existing corrosion inhibitor, the alkyl quaternary ammonium salt imidazoline adopted by the invention has a longer chain structure, and can be effectively complexed on a metal electrode, thereby effectively blocking the electrode and photoresist cleaning solution and solving the problem of insufficient corrosion inhibition capability of the existing corrosion inhibitor.
(2) The alkyl quaternary ammonium salt imidazoline adopted by the invention can be compounded with the short-chain azole compound, the short-chain azole compound has higher complexation, and can fill gaps generated on the surface of the electrode by the long-chain alkyl quaternary ammonium salt imidazoline, so that the complex is more fully carried out on the surface of the metal electrode, the contact between cleaning liquid and the metal electrode is blocked, and the corrosion of the metal electrode, particularly Cu and Al electrodes, is effectively prevented.
(3) The photoresist cleaning solution for the semiconductor chip has excellent corrosion inhibition effect on Cu and Al electrodes, and is more stable, longer in service life and excellent in cleaning performance.
(4) The composite functional agent in the photoresist cleaning solution for the semiconductor chip is nontoxic and has no pollution to the environment.
Therefore, the photoresist cleaning solution has very good application prospect and large-scale industrialized popularization potential in the field of semiconductor chip cleaning.
Drawings
Fig. 1: a microscope picture of the radio frequency chip before cleaning after 500 times of amplification;
fig. 2: a microscope image of a radio frequency chip after 500 times of amplification was obtained using the cleaning solution prepared in example 1 of the present invention;
fig. 3: microscope pictures of the radio frequency chip after cleaning by using the cleaning solution prepared in comparative example 1 of the present invention are magnified 500 times.
Detailed Description
The invention is further described with reference to specific examples and figures:
table 1 examples 1 to 8
Table 2 comparative examples 1 to 4
TABLE 3 test results for examples 1-8 and comparative examples 1-4
The preparation method of the photoresist cleaning solution for the semiconductor chip comprises the following steps:
the method comprises the following steps:
step 1: weighing each component with each dosage;
step 2: and adding all components except the composite functional agent into a container at the temperature of 25-30 ℃, stirring for 10-20min until all materials are completely mixed, adding the composite functional agent while stirring, and continuing stirring for 10-20min until the components are uniform and transparent, thus obtaining the semiconductor chip photoresist cleaning solution.
The application method of the photoresist cleaning solution for the semiconductor chip comprises the following steps:
the method comprises the following steps:
step 1: soaking the semiconductor chip in the photoresist cleaning solution of the semiconductor chip at the temperature of 70-90 ℃ for 10-30min;
step 2: and (3) cleaning the semiconductor chip cleaned in the step (1) by deionized water, soaking the semiconductor chip in ethanol or isopropanol for 5-10min, and drying the semiconductor chip by normal-temperature nitrogen to finish cleaning the semiconductor chip.
The deionized water used in steps 1 and 2 is deionized water having a resistance of at least 18mΩ.
In the present invention, the cleaning method is not particularly limited, and the cleaning method may be dip stripping cleaning, swing stripping cleaning, single wafer stripping cleaning, rotary stripping cleaning of a rotator, ultrasonic stripping cleaning; wherein, the swinging stripping cleaning and the ultrasonic stripping cleaning have the best effect.
The cleaning method in the invention is specifically ultrasonic stripping cleaning
The method comprises the following specific steps:
step 1: placing the semiconductor chip photoresist cleaning solution in a container, soaking the semiconductor chip in the container, and heating the container in a water bath at 80-85 ℃ to raise the temperature;
step 2: taking out the heated container, placing in an ultrasonic device, starting the ultrasonic device to carry out ultrasonic treatment, wherein the ultrasonic frequency is 80Hz, and the ultrasonic time is 20-30min;
step 3: and (3) after the ultrasonic treatment is finished, taking out the semiconductor chip in the container in the step (2), soaking the semiconductor chip for 5-10min by using isopropanol, and drying by using nitrogen to finish the cleaning of the semiconductor chip.
Regarding performance testing and description:
the test method for the performance 1 storage comprises the following steps:
the cleaning solution was stored at room temperature in the absence of light, and the external forms after different storage times were examined, respectively, to examine the respective stability properties thereof.
The test method of the performance 2 metal corrosion rate comprises the following steps:
ICP-MS (inductively coupled plasma mass spectrometry) was used to test the corrosion performance of different cleaning fluids on metals.
The specific test method comprises the following steps: soaking 4×4cm wafer (coated with different metal layers (Cu and Al respectively)) in cleaning solution at 70deg.C for 1 hr, measuring metal ion concentration in the cleaning solution by ICP-MS method, and calculating corrosion rates%I.e. < ->May also be referred to as "etch rate") to examine the etch rate of the metal by the different cleaning fluids.
Analysis of test results shows that:
from the test results in table 3, it can be seen that:
in the process of cleaning the chip, the chip photoresist cleaning solution prepared in the embodiment of the invention has smaller corrosion rates to metal Al and Cu, and the overall corrosion rate is smaller than that of the metal Al and CuWhereas the cleaning liquid prepared in the comparative example had a corrosion rate of more than +.>Therefore, the chip photoresist cleaning solution prepared by the invention effectively blocks the contact between the cleaning solution and the metal electrode, and effectively prevents the corrosion of the metal electrode.
From the time of layering, the chip photoresist cleaning solution prepared in the embodiment of the invention also has longer days of layering, better stability and longer service life.
Further comparing the description with the drawings：
FIG. 1 is a microscope image of a radio frequency chip before cleaning at 500 Xmagnification; fig. 2 is a microscopic image of a rf chip after cleaning using the photoresist cleaning solution for a semiconductor chip prepared in example 1 of the present invention at 500 times magnification. From the comparison of fig. 1 and fig. 2, the copper plating layer on the surface of the radio frequency chip after being cleaned by the cleaning solution prepared in the embodiment 1 of the invention is basically free from corrosion, so that the metal electrode is effectively prevented from corrosion, and the cleaning solution is clean and has excellent cleaning performance.
Fig. 3 is a microscopic image of a radio frequency chip after cleaning using the cleaning solution prepared in comparative example 1 of the present invention at 500 times magnification. From the comparison of fig. 1 and fig. 3, the copper plating layer on the surface of the radio frequency chip after cleaning with the cleaning solution prepared in comparative example 1 of the present invention is significantly corroded, and the cleaning performance is poor.
Compared with the prior art, the semiconductor chip photoresist cleaning solution, the preparation method and the application thereof have the advantages that The following advantages：
(1) Compared with the existing corrosion inhibitor, the alkyl quaternary ammonium salt imidazoline adopted by the invention has a longer chain structure, and can be effectively complexed on a metal electrode, thereby effectively blocking the electrode and photoresist cleaning solution and solving the problem of insufficient corrosion inhibition capability of the existing corrosion inhibitor.
(2) The alkyl quaternary ammonium salt imidazoline adopted by the invention can be compounded with the short-chain azole compound, the short-chain azole compound has higher complexation, and can fill gaps generated on the surface of the electrode by the long-chain alkyl quaternary ammonium salt imidazoline, so that the complex is more fully carried out on the surface of the metal electrode, the contact between cleaning liquid and the metal electrode is blocked, and the corrosion of the metal electrode, particularly Cu and Al electrodes, is effectively prevented.
(3) The photoresist cleaning solution for the semiconductor chip has excellent corrosion inhibition effect on Cu and Al electrodes, and is more stable, longer in service life and excellent in cleaning performance.
(4) The composite functional agent in the photoresist cleaning solution for the semiconductor chip is nontoxic and has no pollution to the environment.
While the present invention has been described above by way of example with reference to the embodiments and the accompanying drawings, it is apparent that the implementation of the present invention is not limited by the above manner, and it is within the scope of the present invention to apply the inventive concept and technical solution to other situations as long as various improvements are adopted by the inventive concept and technical solution, or without any improvement.
Claims (10)
1. The photoresist cleaning solution for the semiconductor chip is characterized by comprising the following components in parts by weight:
2. the photoresist cleaning solution for semiconductor chips as defined in claim 1, comprising the following components in parts by weight:
3. the semiconductor chip photoresist cleaning solution according to claim 1 or 2, wherein:
the compound functional agent is compounded by adopting alkyl quaternary ammonium salt imidazoline and an azole compound;
the mass ratio of the alkyl quaternary ammonium salt imidazoline to the azole compound in the composite functional agent is 5-10:3;
wherein, the alkyl quaternary ammonium salt imidazoline is preferably long-chain alkyl quaternary ammonium salt imidazoline.
4. A semiconductor chip photoresist cleaning solution according to claim 3, wherein:
wherein the alkyl quaternary ammonium salt imidazoline is preferably C7-18 alkyl quaternary ammonium salt imidazoline, and the alkyl quaternary ammonium salt imidazoline is selected from one or more of aryloxy methylene imidazoline quaternary ammonium salt, naphthoxy methylene imidazoline quaternary ammonium salt, heptadecylaminoethyl imidazoline quaternary ammonium salt and hexadecyl imidazoline quaternary ammonium salt;
the nitrogen azole compound is selected from one or more of 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 5-amino-tetrazole, 3, 5-diamino-1, 2, 4-triazole, 2-aminoimidazole, 2-aminobenzimidazole, diaminobenzimidazole, 2-aminothiazole, 2-aminobenzothiazole, 2-aminooxazole, 2-aminobenzoxazole, 3-aminopyrazole, 3-aminocarbazole, 6-aminoindazole, 2-amino-1, 3, 4-thiadiazole and 5-amino-1, 2, 3-thiadiazole.
5. The semiconductor chip photoresist cleaning solution according to claim 4, wherein:
the polyol is selected from C4-C6 polyols;
the sulfoxide is selected from linear sulfoxide;
the alcohol amine is selected from one or more of diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, ethanolamine and ethyldiethanolamine;
the imidazolone is selected from one or more of 1, 3-dimethyl-2-imidazolone, 1-methyl-2-imidazolone, 4-phenyl-2-imidazolone, 1-isopropyl-2-imidazolone and 1-tert-butyl-2-imidazolone;
the imidazolidone is alkyl imidazolidone.
6. The semiconductor chip photoresist cleaning solution according to claim 5, wherein:
the polyhydric alcohol is preferably xylitol, talitol, sorbitol or mannitol;
the sulfoxide is preferably one or more of ethyl methyl sulfoxide, diethyl sulfoxide and dimethyl sulfoxide;
the alcohol amine is preferably propanolamine or isopropanolamine;
the imidazolone is preferably methylimidazolone;
the imidazolidone is selected from one or more of 1, 3-dimethyl-2-imidazolidone, 2-imidazolidone and 2-tertiary butyl-3-methyl-5-benzyl-4-imidazolidone.
7. The semiconductor chip photoresist cleaning solution of claim 6, wherein:
most preferably, the polyol is sorbitol;
the sulfoxide is most preferably dimethyl sulfoxide;
most preferably, the alcohol amine is isopropanolamine;
the imidazolinone is most preferably 1, 3-dimethyl-2-imidazolinone;
the imidazolidone is most preferably 1, 3-dimethyl-2-imidazolidone.
8. A method for preparing the photoresist cleaning solution for semiconductor chips according to claims 1 to 7, comprising the steps of:
step 1: weighing each component with each dosage;
step 2: and adding all components except the composite functional agent into a container at the temperature of 25-30 ℃, stirring for 10-20min until all materials are completely mixed, adding the composite functional agent while stirring, and continuing stirring for 10-20min until the components are uniform and transparent, thus obtaining the semiconductor chip photoresist cleaning solution.
9. A method of using the photoresist cleaning solution for semiconductor chips as defined in any one of claims 1 to 7, comprising the steps of:
step 1: soaking the semiconductor chip in the photoresist cleaning solution of the semiconductor chip at the temperature of 70-90 ℃ for 10-30min;
step 2: washing the semiconductor chip washed in the step 1 by deionized water, soaking the semiconductor chip in ethanol or isopropanol for 5-10min, and drying the semiconductor chip by normal-temperature nitrogen to finish the washing of the semiconductor chip;
the cleaning in the step 1 can be one of dipping stripping cleaning, swinging stripping cleaning, single-wafer stripping cleaning, rotary stripping cleaning of a rotator and ultrasonic stripping cleaning;
wherein, the swinging stripping cleaning and ultrasonic stripping cleaning effects are optimal.
10. Use of the semiconductor chip photoresist cleaning solution of claims 1-7 for cleaning Cu, al semiconductor chips.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311148585.7A CN117250833A (en) | 2023-09-07 | 2023-09-07 | Semiconductor chip photoresist cleaning solution, preparation method and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311148585.7A CN117250833A (en) | 2023-09-07 | 2023-09-07 | Semiconductor chip photoresist cleaning solution, preparation method and application thereof |
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| CN117250833A true CN117250833A (en) | 2023-12-19 |
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