CN117234042B - Mask calibration mark secondary exposure process method - Google Patents
Mask calibration mark secondary exposure process method Download PDFInfo
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- CN117234042B CN117234042B CN202311333476.2A CN202311333476A CN117234042B CN 117234042 B CN117234042 B CN 117234042B CN 202311333476 A CN202311333476 A CN 202311333476A CN 117234042 B CN117234042 B CN 117234042B
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
本发明公开了一种掩膜版的校准标记二次曝光工艺方法，该方法包括：在设置光刻胶层之后，采用标准曝光剂量以及一次曝光掩模版图形对整个掩膜基板进行整体曝光；采用预设曝光剂量以及二次曝光掩模版图形对所述掩模基板进行局部曝光，所述二次曝光掩模版图形仅仅包括校准标记的区域。针对掩膜基板边缘光阻较厚，标准剂量模式(DOSE)进行曝光无法曝光彻底。在第一次常规曝光之后，仅针对光阻较厚的校准标记区域，使用一个特定曝光剂量进行局部曝光。最终使得全部的校准标记区域能够正常透光，不会影响到NikonI8曝光机的对准作业。
The present invention discloses a calibration mark double exposure process method for a mask, the method comprising: after setting a photoresist layer, using a standard exposure dose and a single exposure mask pattern to expose the entire mask substrate as a whole; using a preset exposure dose and a double exposure mask pattern to partially expose the mask substrate, the double exposure mask pattern only includes the calibration mark area. As the photoresist at the edge of the mask substrate is thick, the standard dose mode (DOSE) cannot expose thoroughly. After the first conventional exposure, only the calibration mark area with thick photoresist is partially exposed using a specific exposure dose. Finally, all the calibration mark areas can be normally transparent, and the alignment operation of the NikonI8 exposure machine will not be affected.
Description
Technical Field
The application relates to the technical field of semiconductor production, in particular to a calibration mark secondary exposure process method of a mask.
Background
A photoetching mask plate (also called a photomask), which is a pattern master plate used in the photoetching process commonly used in micro-nano processing technology. A mask pattern structure is formed on a transparent substrate by an opaque light-shielding film, and pattern information is transferred to a product substrate through an exposure process. The mask to be processed consists of a glass/quartz substrate, a chromium layer and a photoresist layer. The pattern structure can be obtained by plate making process, and the common processing equipment is direct writing lithography equipment, such as laser direct writing lithography machine, electron beam lithography machine, etc. Masks are widely used, and masks such as I C (integrated circuits), FPDs (flat panel displays), PCBs (printed circuit boards), MEMS (micro electro mechanical systems) and the like are required to be used in the field involving photolithography processes.
For example, nikon I8 series lithography is one of the mainstream exposure machines for a semiconductor 6 inch production line equipped with a 5 inch reticle. The drawing design of the mask mainly comprises two parts, namely a framework and a chip pattern. The framework is mainly used for loading and aligning the mask plate in an exposure machine. After the two steps are passed, the chip patterns can be exposed on the wafer. The core design of the architecture diagram is the alignment mark for alignment. The calibration mark of nikon I8 consists of three marks, each mark having a square light-transmitting area plus a center cross mark. As shown in FIG. 1, the three marks are closer to the edge of the mask plate, which is 2mm, and exceed the quality effective area of the raw material substrate for manufacturing the mask plate. The quality effective region is a region in which an effective pattern can be resolved during photolithography. When the mask substrate is coated with photoresist, the mask substrate is limited by the limitation of a uniform coating process, and relatively thick photoresist can be formed at the edge. In photolithography, a standard exposure dose is typically used to achieve a high level of accuracy in the chip area. However, the exposure dose cannot be thoroughly exposed in the region with thicker edge photoresist, and finally a residual chromium metal layer is formed in the region, so that the photoresist is blocked.
Currently, the effective area of a 5 inch (127 mm) mask is 122mm in the middle range, i.e. the area with the edge of 2.5mm cannot normally analyze patterns. Therefore, under the conventional process conditions, the calibration mark of the machine type theoretically has a region with the width of 0.5mm, and cannot transmit light normally, so that the alignment of the exposure machine can be influenced, and the Nikon I8 exposure machine cannot work.
The existing process method for solving the problems is mainly optimized from the coating process of the mask substrate. For example, after photoresist coating, a chemical solvent is used to clean the edge of the excess thicker photoresist. And also such as optimizing coating parameters to minimize the thickness of the edge resist. However, such methods cannot accurately eliminate the thickness difference of the photoresist or cause some defects to control.
Disclosure of Invention
The invention mainly aims to provide a mask plate secondary exposure alignment method, and aims to solve the technical problem that alignment of an exposure machine can be affected because a calibration mark part cannot normally transmit light after one exposure.
In order to solve the technical problem, the present invention provides a first aspect of a mask secondary exposure alignment method, which includes:
after setting the photoresist layer, carrying out integral exposure on the whole mask substrate by adopting standard exposure dose and one-time exposure mask pattern;
And carrying out local exposure on the mask substrate by adopting a preset exposure dose and a secondary exposure mask pattern, wherein the secondary exposure mask pattern only comprises a region of the calibration mark.
Specifically, the one-shot mask pattern includes all of a chip pattern area and an architecture pattern area.
Specifically, the preset exposure dose is larger than or equal to the minimum dose required by the total light transmission of the area of the calibration mark after the secondary exposure.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
and the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of each secondary exposure block is abutted to the outer side edge of the square area.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
and the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of the secondary exposure block covers the part of the square area outside the effective area of the mask plate.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
And the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of each secondary exposure block covers the square area.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
The center of the secondary exposure image block in the horizontal direction and the cross mark of the square area are on the same horizontal line, and the center of the secondary exposure image block in the vertical direction and the cross mark of the square area are on the same vertical line.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
And the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of the secondary exposure block is 6mm, the width of the secondary exposure block is 1mm, and the distance between the center line of the secondary exposure block and the edge of the mask plate is 1.5mm.
The technical scheme of the invention has the beneficial effects that:
The method for the secondary exposure process of the calibration mark of the mask plate aims at the problem that the mask plate is thicker in edge photoresist and cannot be exposed thoroughly when exposure is carried out in a standard DOSE mode (DOSE). After the first conventional exposure, a partial exposure is performed using one specific exposure dose only for the calibration mark region where the photoresist is thicker. Finally, all the calibration mark areas can transmit light normally, and the alignment operation of the Nikon I8 exposure machine cannot be affected.
Drawings
FIG. 1 is a diagram of a one-shot mask layout structure for implementing an embodiment of the present invention;
FIG. 2 is a flowchart of a mask plate secondary exposure alignment method according to an embodiment of the present invention;
FIG. 3 is a diagram of a mask pattern structure for a secondary exposure provided by an embodiment of the present invention;
FIG. 4 is a schematic diagram of a first two-shot mask pattern exposure process according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a second type of two-shot mask pattern exposure process according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a third two-shot mask pattern exposure process according to an embodiment of the present invention;
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
As shown in fig. 2 and 3, an embodiment of the present invention provides a mask secondary exposure alignment method, which includes:
S101, after a photoresist layer is arranged, carrying out integral exposure on the whole mask substrate by adopting standard exposure dose and one-time exposure mask pattern;
S102, locally exposing the mask substrate by adopting a preset exposure dose and a secondary exposure mask pattern, wherein the secondary exposure mask pattern only comprises a region of a calibration mark.
As shown in fig. 1, the one-shot mask pattern includes all of the chip pattern area and the architecture pattern area.
Specifically, the preset exposure dose is larger than or equal to the minimum dose required by the total light transmission of the area of the calibration mark after the secondary exposure.
As shown in fig. 4, the area of the mask pattern for the secondary exposure that includes only the calibration marks specifically includes:
and the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of each secondary exposure block is abutted to the outer side edge of the square area.
As shown in fig. 5, the area of the mask pattern for the secondary exposure that includes only the calibration marks specifically includes:
and the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of the secondary exposure block covers the part of the square area outside the effective area of the mask plate.
As shown in fig. 6, the area of the mask pattern for the secondary exposure that includes only the calibration marks specifically includes:
And the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of each secondary exposure block covers the square area.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
The center of the secondary exposure image block in the horizontal direction and the cross mark of the square area are on the same horizontal line, and the center of the secondary exposure image block in the vertical direction and the cross mark of the square area are on the same vertical line.
Optionally, the area where the secondary exposure mask pattern includes only the calibration mark specifically includes:
And the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of the secondary exposure block is 6mm, the width of the secondary exposure block is 1mm, and the distance between the center line of the secondary exposure block and the edge of the mask plate is 1.5mm.
The method for the secondary exposure process of the calibration mark of the mask plate aims at the problem that the mask plate is thicker in edge photoresist and cannot be exposed thoroughly when exposure is carried out in a standard DOSE mode (DOSE). After the first conventional exposure, a partial exposure is performed using one specific exposure dose only for the calibration mark region where the photoresist is thicker. Finally, all the calibration mark areas can transmit light normally, and the alignment operation of the Nikon I8 exposure machine cannot be affected.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal device (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.
Claims (5)
1. A mask plate secondary exposure alignment method is characterized by comprising the following steps:
after setting the photoresist layer, carrying out integral exposure on the whole mask substrate by adopting standard exposure dose and one-time exposure mask pattern;
Carrying out local exposure on the mask substrate by adopting a preset exposure dose and a secondary exposure mask pattern, wherein the secondary exposure mask pattern only comprises a region of a calibration mark;
the area of the mask pattern for the secondary exposure, which only comprises the calibration marks, specifically comprises:
and the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of each secondary exposure block is greater than or equal to the side length of the square area, and the width of the secondary exposure block covers the part of the square area outside the effective area of the mask plate.
2. The reticle double exposure alignment method of claim 1, wherein the single exposure reticle pattern comprises all of a chip pattern area and a frame pattern area.
3. The mask plate secondary exposure alignment method according to claim 1, wherein the preset exposure dose is greater than or equal to a minimum dose required by total light transmission of the area of the calibration mark after secondary exposure.
4. The mask plate secondary exposure alignment method according to claim 1, wherein the area of the secondary exposure mask plate pattern including only the calibration mark specifically includes:
The center of the secondary exposure image block in the horizontal direction and the cross mark of the square area are on the same horizontal line, and the center of the secondary exposure image block in the vertical direction and the cross mark of the square area are on the same vertical line.
5. The mask plate secondary exposure alignment method according to claim 4, wherein the area of the secondary exposure mask plate pattern including only the calibration mark specifically includes:
And the three square areas corresponding to the calibration marks are respectively provided with a secondary exposure block, the length of the secondary exposure block is 6mm, the width of the secondary exposure block is 1mm, and the distance between the center line of the secondary exposure block and the edge of the mask plate is 1.5mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311333476.2A CN117234042B (en) | 2023-10-16 | 2023-10-16 | Mask calibration mark secondary exposure process method |
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| CN202311333476.2A CN117234042B (en) | 2023-10-16 | 2023-10-16 | Mask calibration mark secondary exposure process method |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102890432A (en) * | 2012-10-11 | 2013-01-23 | 深圳清溢光电股份有限公司 | Mask plate manufacturing method by additively exposing figure |
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| KR200181369Y1 (en) * | 1997-12-30 | 2000-05-15 | 김영환 | Exposure equipment |
| JP2000105385A (en) * | 1998-09-30 | 2000-04-11 | Optrex Corp | Production of liquid crystal display element |
| CN101788768A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Exposure method |
| CN104460246B (en) * | 2013-09-12 | 2019-07-23 | 上海微电子装备（集团）股份有限公司 | A kind of novel lithography alignment method |
| CN108020990A (en) * | 2016-10-31 | 2018-05-11 | 无锡中微掩模电子有限公司 | Mask plate for integrated circuit re-expose method |
| CN108319057A (en) * | 2018-03-29 | 2018-07-24 | 武汉华星光电技术有限公司 | Substrate edges processing method, mask plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102890432A (en) * | 2012-10-11 | 2013-01-23 | 深圳清溢光电股份有限公司 | Mask plate manufacturing method by additively exposing figure |
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