CN117212736B - Lighting device for semiconductor dark field detection and detection system - Google Patents
Lighting device for semiconductor dark field detection and detection system Download PDFInfo
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Abstract
The present disclosure discloses an illumination device and detection system for semiconductor dark field detection. The lighting device includes: the annular optical fiber comprises two optical fiber groups, wherein each optical fiber group comprises two arc-shaped optical fibers which are oppositely arranged; and a control element coupled to the annular optical fiber and configured to: one group of light-up is selected from two groups of optical fibers according to the direction of the cutting channel of the core particle in the semiconductor, so as to be used as a dark field detection light source of the semiconductor. By the scheme of the embodiment of the disclosure, multi-stage control of light emission can be realized, and targeted illumination control can be realized. Especially when the semiconductor is detected, the reflection imaging of the lamp beads on the surface of the semiconductor is eliminated by closing two sections of arc-shaped optical fibers in the reflection imaging direction of the lamp beads and opening two sections of arc-shaped optical fibers in the other direction, so that the imaging quality of a detection image is ensured, and the reliability and the accuracy of a semiconductor detection result are improved.
Description
Technical Field
The present disclosure relates generally to the field of semiconductor inspection technology. More particularly, the present disclosure relates to an illumination device and detection system for semiconductor dark field detection.
Background
With the continuous development of the electronic industry, the quality requirements of semiconductors are also increasing, and the defect detection of semiconductors has become a very important part of the current semiconductor production. The detection mode of manual visual inspection is gradually replaced by the automatic detection mode based on machine vision due to the defects of low detection efficiency, large human error, non-uniform detection standard, unquantifiable detection and the like.
The machine vision detection mainly comprises the steps of capturing a semiconductor image in real time through image acquisition equipment such as a camera, analyzing and processing the image to obtain various parameters of the image, and comparing and calculating with preset detection standards to judge whether the semiconductor product has defects. The imaging quality of the image has a large influence on the detection result, and the imaging quality of the image is closely related to the illumination condition during imaging. Therefore, to ensure imaging uniformity, conventional machine vision inspection may use a ring light source to ensure stable, uniform lighting conditions.
However, most of the surfaces of the existing core particle products are subjected to coating treatment, and different coating processes can interfere with imaging of the annular light source, so that a phenomenon similar to projection of lamp beads with interference fringes appears in a detected image. This phenomenon seriously affects the imaging uniformity, and results in the influence on the reliability of the semiconductor defect detection result, so that the conventional annular light source cannot meet the high-precision detection requirement of the current semiconductor industry.
In view of the foregoing, it is desirable to provide an illumination scheme for semiconductor dark field detection, so as to eliminate the phenomenon that the light source beads are imaged on the surface of the semiconductor during semiconductor detection, thereby solving the influence of the reflectivity of the metal material adopted in the film coating process on the imaging quality and ensuring the reliability and accuracy of the semiconductor detection result.
Disclosure of Invention
To address at least one or more of the technical problems mentioned above, the present disclosure proposes, in various aspects, an illumination scheme for semiconductor dark field detection.
In a first aspect, the present disclosure provides an illumination device for semiconductor dark field detection comprising: the annular optical fiber comprises two optical fiber groups, wherein each optical fiber group comprises two arc-shaped optical fibers which are oppositely arranged; and a control element coupled to the annular optical fiber and configured to: one group of light-up is selected from two groups of optical fibers according to the direction of the cutting channel of the core particle in the semiconductor, so as to be used as a dark field detection light source of the semiconductor.
In some embodiments, wherein the ring-shaped optical fiber is made up of four arcuate optical fibers, the arcuate lengths of the four arcuate optical fibers are equal and the subtended central angles are equal, and wherein the two arcuate optical fibers in opposing positions make up a set of optical fibers.
In a second aspect, the present disclosure provides a detection system for semiconductor dark-field detection comprising: an illumination device as described in the first aspect for illuminating a semiconductor to form a detection beam; a detection lens group for receiving a reflected light beam formed by reflecting the detection light beam from the semiconductor surface; and an imaging element for receiving the reflected light beam from the detection lens group to form a detection image.
In some embodiments, the control element in the illumination device is coupled to the imaging element and configured to: acquiring a bright field detection image of the first semiconductor under a bright field detection light source from an imaging element; identifying the cutting path direction according to the bright field detection image; sequentially illuminating each optical fiber group in response to the cutting path direction meeting the dark field detection condition so as to form a dark field detection image under the irradiation of each optical fiber group; and determining the optical fiber groups required by dark field detection according to the dark field detection image irradiated by each optical fiber group.
In some embodiments, wherein the dark field detection condition includes a requirement that a scribe line be present in the first semiconductor, the scribe line being oriented parallel to the arc height of one of the looped optical fibers.
In some embodiments, wherein after identifying the cutting track direction from the bright field detection image, the control element is further configured to: and in response to the dicing street direction not meeting the dark field detection condition, rotating the first semiconductor to adjust the dicing street direction so as to meet the dark field detection condition.
In some embodiments, wherein after determining the set of optical fibers required for dark field detection, the control element is further configured to: illuminating an optical fiber group required for dark field detection to serve as a dark field detection light source of the second semiconductor; the placing gesture of the second semiconductor is consistent with the placing gesture of the first semiconductor under the dark field detection light source, and the model of the second semiconductor is consistent with the model of the first semiconductor; acquiring a dark field detection image formed by the second semiconductor under the dark field detection light source; and performing defect detection based on the dark field detection image of the second semiconductor.
In some embodiments, wherein prior to acquiring the bright field detection image of the first semiconductor under the bright field detection light source from the imaging element, the control element is further configured to: all fiber groups in the ring fiber are lighted to form a bright field detection light source.
In some embodiments, the detection system further comprises: a mechanical arm or a rotatable stage, the mechanical arm or the rotatable stage being connected to the control element; in rotating the first semiconductor, the control element is further configured to: the control robot rotates the first semiconductor or the rotatable stage.
In some embodiments, wherein detecting the lens group comprises: the imaging element, the barrel lens and the objective lens are sequentially arranged along the optical axis, and the annular optical fiber is sleeved on the outer peripheral surface of the objective lens.
By the illumination device for detecting the dark field of the semiconductor, the embodiment of the disclosure can realize multi-section distinguishable control of light emission through the segmented annular optical fiber, so that different optical fiber groups are controlled to be lightened according to different cutting channel directions of core particles in the semiconductor, and targeted illumination control is realized. In the detection of a semiconductor, the embodiment of the disclosure can eliminate the reflection imaging of the lamp beads on the surface of the semiconductor by closing two sections of arc-shaped optical fibers in the reflection imaging direction of the lamp beads and opening two sections of arc-shaped optical fibers in the other direction, and provide a uniform detection light source for the detection of a dark field of the semiconductor, so that the imaging quality of a detection image is ensured, and the reliability and the accuracy of a semiconductor detection result are improved.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
FIG. 1 illustrates an exemplary block diagram of a lighting device for semiconductor dark-field detection in accordance with some embodiments of the present disclosure;
FIG. 2 illustrates an exemplary block diagram of a detection system for semiconductor dark-field detection in accordance with some embodiments of the present disclosure;
FIG. 3 illustrates an exemplary flow chart of a lighting control method of some embodiments of the present disclosure;
FIG. 4 illustrates an exemplary flow chart of a semiconductor dark-field detection method of some embodiments of the present disclosure;
FIG. 5 illustrates an exemplary flow chart of a lighting control method of other embodiments of the present disclosure;
fig. 6 shows an exemplary block diagram of the electronic device of an embodiment of the present disclosure.
Detailed Description
The following description of the embodiments of the present disclosure will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the disclosure. Based on the embodiments in this disclosure, all other embodiments that may be made by those skilled in the art without the inventive effort are within the scope of the present disclosure.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the present disclosure is for the purpose of describing particular embodiments only, and is not intended to be limiting of the disclosure. As used in the specification and claims of this disclosure, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the term "and/or" as used in the present disclosure and claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
As used in this specification and the claims, the term "if" may be interpreted as "when..once" or "in response to a determination" or "in response to detection" depending on the context. Similarly, the phrase "if a determination" or "if a [ described condition or event ] is detected" may be interpreted in the context of meaning "upon determination" or "in response to determination" or "upon detection of a [ described condition or event ]" or "in response to detection of a [ described condition or event ]".
Specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
Exemplary application scenarios
When a machine vision algorithm is used for detecting a semiconductor product, the imaging quality of an image plays a crucial role in the accuracy and reliability of a detection result, and the illumination condition during imaging plays a significant role in the imaging quality of the image. Therefore, in the current semiconductor industry, an annular light source is generally used as a detection light source, so as to ensure uniformity of a detected image.
However, most of the surfaces of the existing core particle products are subjected to coating treatment, and different coating processes can interfere with imaging of the annular light source, so that a phenomenon similar to projection of lamp beads with interference fringes appears in a detected image. This phenomenon seriously affects the imaging uniformity, and results in the influence on the reliability of the semiconductor defect detection result, so that the conventional annular light source cannot meet the high-precision detection requirement of the current semiconductor industry.
Exemplary application scenario
In view of this, the disclosed embodiments provide an illumination scheme for semiconductor dark field detection, which can realize multi-section distinguishable control of light emission through a segmented annular optical fiber, so as to control different optical fiber groups to light according to different cutting channel directions of core particles in a semiconductor, realize targeted illumination control, eliminate the phenomenon of bead projection, and ensure imaging quality.
Fig. 1 illustrates an exemplary block diagram of a lighting device 100 for semiconductor dark-field detection according to some embodiments of the present disclosure, as shown in fig. 1, the lighting device includes: the annular optical fiber 10 and the control element 20 connected with the annular optical fiber 10, wherein the annular optical fiber 10 comprises two groups of optical fiber groups, each group of optical fiber groups comprises two sections of arc-shaped optical fibers which are oppositely arranged, the control element 20 is used for controlling the brightness of the arc-shaped optical fibers in the annular optical fiber, and in particular, the control element 20 is configured to: one group of light-up is selected from two groups of optical fibers according to the direction of the cutting channel of the core particle in the semiconductor, so as to be used as a dark field detection light source of the semiconductor.
Further, as shown in fig. 1, the ring-shaped optical fiber 10 is formed by four arc-shaped optical fibers, and the arc lengths and the central angles of the four arc-shaped optical fibers are equal, which can be understood as that the four arc-shaped optical fibers are equal arcs. And, in the above four arc-shaped optical fibers, two arc-shaped optical fibers at opposite positions constitute a group of optical fibers.
That is, when the lighting device is used to provide the semiconductor dark field detection light source, the control element selects two arc-shaped optical fibers at opposite positions from the four arc-shaped optical fibers to light, so that a symmetrical side light source is formed.
Based on the illumination devices provided by the foregoing embodiments, the present disclosure may provide a detection system for semiconductor dark-field detection, and fig. 2 illustrates an exemplary block diagram of a detection system 200 for semiconductor dark-field detection of some embodiments of the present disclosure. As shown in fig. 2, the detection system includes: the structure of the illumination device, the detection lens assembly 30 and the imaging element 40 has been described in detail in the foregoing embodiment in connection with fig. 1, and will not be described here again.
In the present embodiment, the illumination device is used for irradiating the semiconductor to form the detection beam, the detection lens group 30 is used for receiving the reflected beam formed by the semiconductor surface reflecting the detection beam, and the imaging element 40 receives the reflected beam from the detection lens group 30 and forms the detection image based on the reflected beam.
Further, the detection lens group 30 may include: the barrel lens 32 and the objective lens 31 are sequentially arranged along the optical axis as shown in fig. 2, and the imaging element 40, the barrel lens 32 and the objective lens 31 are sleeved on the outer peripheral surface of the objective lens 31 by the annular optical fiber 10.
It should be noted that the semiconductor product to which this embodiment is directed is a process stage after coating, and at this stage, there are different degrees and sizes of metallization on the surface of each core particle of the semiconductor. Because the surface of the metal material has light reflection, the light source lamp beads can be imaged on the surface of the core particle, so that the uniformity of the imaging device in imaging is affected, and the defect detection of the semiconductor is seriously affected.
The projection phenomenon of the lamp beads is related to the direction of the core particles on the surface of the product and the light emitting direction of the annular light, and is always the cutting channel direction of the core particles on the semiconductor, and the lamp beads can rotate along with the rotation of the semiconductor product. Further, it was found after analysis that the lamp beads causing this phenomenon were always present at the opposite side portions of the light source, and therefore, after the light sources at the opposite side portions were turned off, the phenomenon of reflection of the lamp beads was eliminated, and uniform illumination was achieved by irradiation with the light sources at the other two sides.
Based on the above principle, the control element 20 in the illumination device is connected to the imaging element 40, and determines which pair of side partial light sources are to be lighted by performing an illumination control method as shown below, thereby eliminating the imaging of the lamp beads on the surface of the core particle.
Fig. 3 illustrates an exemplary flowchart of a lighting control method 300 of some embodiments of the present disclosure. As shown in fig. 3, in step S301, a bright field detection image of a first semiconductor under a bright field detection light source is acquired. In some embodiments, the bright field detection light source may also be provided by a ring-shaped optical fiber, and the control element may illuminate all fiber groups in the ring-shaped optical fiber to form the bright field detection light source, for example, before acquiring a bright field detection image of the first semiconductor under the bright field detection light source.
When the bright field detection light source is obtained, the imaging element can collect a bright field detection image of the first semiconductor under the irradiation of the bright field detection light source and send the collected bright field detection image to the control element. It should be noted that, the first semiconductor in this embodiment refers to a semiconductor used when determining the light emitting direction of the dark field detection light source, and the first semiconductor and the semiconductor to be detected subsequently belong to the same model and/or the same batch, so that the light emitting direction of the dark field detection light source determined according to the first semiconductor is also applicable to the semiconductor to be detected subsequently.
In step S302, the track direction is identified from the bright field detection image. In the integrated circuit package manufacturing process, a wafer dicing film is first attached to the back of the processed wafer to be inspected, and then the wafer to be inspected is diced. The dicing lanes are dividing lines between adjacent core grains on the wafer, and since the core grains on the common semiconductor product are distributed in an array, longitudinal dicing lanes are formed between the left and right adjacent core grains, and transverse dicing lanes are formed between the upper and lower adjacent core grains, the identified dicing lane directions comprise a transverse direction and a longitudinal direction.
Further, the identification of the direction of the dicing streets can also be done by machine vision algorithms, such as: example segmentation algorithms based on watershed segmentation algorithms, and the like, are not to be construed as unduly limiting herein. Still further, after the dicing lane direction is identified, positional information of the dicing lane direction may be formed, for example: the angle of inclination of the scribe line direction in the image coordinate system, etc.
In step S303, each of the optical fiber groups is sequentially lighted in response to the dicing street direction satisfying the dark field detection condition to form a dark field detection image under irradiation of each of the optical fiber groups. In this embodiment, the dark field detection condition includes requiring the presence of a scribe line in the first semiconductor, the scribe line being oriented parallel to the arc height of one of the looped optical fibers. That is, in the scribe line direction, one of the lateral scribe line and/or the longitudinal scribe line is parallel to the arc height direction of any one of the arc-shaped optical fibers in the annular optical fiber, and the dark field detection condition is satisfied. The arc height direction of the arc-shaped optical fiber can be understood as the connecting line direction of the central points of the two arc-shaped optical fibers at opposite positions.
When the cutting track direction meets the dark field detection condition, the optical fiber groups in the annular optical fibers are lighted up group by group, and when each optical fiber group is lighted up, the imaging element can acquire dark field detection images of the first semiconductor, so that a plurality of dark field detection images are formed. It will be appreciated that the number of dark field detection images is equal to the number of groups of optical fibers in the ring fiber.
In step S304, the optical fiber groups required for dark field detection are determined from the dark field detection image irradiated by each optical fiber group. Taking an annular optical fiber formed by four arc-shaped optical fibers as an example, the imaging element can acquire two dark field detection images. The two dark field detection images respectively correspond to two groups of optical fiber groups, wherein one dark field detection image has the phenomenon of reflection imaging of the lamp beads, and the other dark field detection image is a normal dark field detection image, so that the optical fiber group corresponding to the normal dark field detection image can be determined to be the optical fiber group required to be lighted under the current detection scene.
What has been described above is a lighting control method that needs to be performed prior to semiconductor dark field detection using a detection system. The following describes a process of semiconductor dark field detection with reference to the illumination control method shown in fig. 3.
Fig. 4 illustrates an exemplary flowchart of a semiconductor dark field detection method 400 of some embodiments of the present disclosure, as shown in fig. 4, in step S401, a bright field detection image of a first semiconductor under a bright field detection light source is acquired.
In step S402, the track direction is identified from the bright field detection image.
In step S403, each of the optical fiber groups is sequentially lighted in response to the dicing street direction satisfying the dark field detection condition to form a dark field detection image under irradiation of each of the optical fiber groups.
In step S404, the optical fiber groups required for dark field detection are determined from the dark field detection image irradiated by each optical fiber group.
It should be noted that, in the present embodiment, the content of steps S401 to S404 is identical to steps S301 to S304 in the previous embodiment, and will not be described here again.
In step S405, an optical fiber group required for dark field detection is lit as a dark field detection light source of the second semiconductor. In this step, the placement posture of the second semiconductor is identical to the placement posture of the first semiconductor under the dark field detection light source, and the model of the second semiconductor is identical to the model of the first semiconductor. In some embodiments, the semiconductor product is provided with a positioning mark at the edge position, so that the gesture of the semiconductor can be identified according to the positioning mark, thereby ensuring that the gesture of the robot or the operator is consistent with the placing gesture of the first semiconductor under the dark field detection light source when the second semiconductor is moved into the detection system.
In addition, the optical fiber group required for dark field detection determined from the first semiconductor is directed to the same type or lot of semiconductors as the first semiconductor. Assuming a model change of the semiconductor under test, a new first semiconductor may be selected from the new model of the semiconductor under test, and the lighting control method may be re-performed to determine the light emitting direction adapted thereto.
It should be further noted that, during the dark field detection of the second semiconductor, the optical fiber group required for the dark field detection may remain in a normally bright state until the second semiconductor is detected or the model of the semiconductor to be detected is changed.
In step S406, a dark field detection image formed by the second semiconductor under the dark field detection light source is acquired.
In step S407, defect detection is performed based on the dark field detection image of the second semiconductor. The dark field detection image formed at this time has no reflection of the lamp beads, and therefore, a computer vision algorithm can be performed based on the dark field detection image obtained in step S406, thereby completing defect detection of the semiconductor.
According to the methods described above in connection with fig. 3 and 4, it is clear that the determination of the light emitting direction needs to be completed on the premise that the direction of the dicing street satisfies the dark field detection condition. However, since the attitude of the first semiconductor when it moves into the detection system is random, it is not ensured that the dicing lane direction can meet the dark field detection condition in a percentage.
In view of this, another embodiment of the present disclosure provides another lighting control method, and fig. 5 shows an exemplary flowchart of a lighting control method 500 of other embodiments of the present disclosure. As shown in fig. 5, in step S501, a bright field detection image of a first semiconductor under a bright field detection light source is acquired. In this embodiment, the content of step S501 is identical to step S301 and step S401 in the previous embodiment, and will not be described here again.
In step S502, the track direction is identified from the bright field detection image. In this embodiment, the identified direction of the dicing lane may be stored in the form of coordinate information in a cache of the control element, for example: coordinates of end points of two ends of a transverse cutting channel positioned at the uppermost part of the image in the bright field detection image, and coordinates of end points of two ends of a longitudinal cutting channel positioned at the leftmost part of the image in the bright field detection image. Alternatively, the identified track direction may also be stored in the buffer of the control element in the form of information about the inclination angle with respect to the coordinate axes of the image coordinate system.
Because the direction and the position of the annular optical fiber are determined information after the annular optical fiber is installed and fixed on the detection system, the arc height direction of each arc-shaped optical fiber in the annular optical fiber can be stored in the control element as a preset parameter. When the control element recognizes the direction of the cutting path, the parameters formed by the direction of the cutting path can be compared with the preset parameters, so as to determine whether the direction of the cutting path meets the dark field detection condition.
In step S503, it is determined whether the track direction satisfies a dark field detection condition. If yes, step S505 is directly executed, and if no, step S504 is executed and then step S505 is executed. As previously described in connection with the embodiment shown in fig. 3, the dark field detection condition includes a requirement that a scribe line be present in the first semiconductor in a direction parallel to the arc height of one of the looped optical fibers.
In step S504, the first semiconductor is rotated to adjust the scribe line direction so as to satisfy the dark field detection condition. In this embodiment, the first semiconductor is placed on the stage, and the dicing street direction can be adjusted by directly rotating the first semiconductor or by rotating the first semiconductor with the turntable.
For example, the detection system may comprise a robotic arm connected to and controlled by a control element that adjusts the direction of the dicing lane by controlling the robotic arm to rotate the first semiconductor.
Further exemplary, the detection system may include a rotatable stage coupled to and controlled by a control element that rotates the first semiconductor by controlling rotation of the rotatable stage.
The rotation process is as follows: taking an annular optical fiber formed by four arc-shaped optical fibers as an example, assuming that the cutting channel is exactly parallel to the dividing line of the four arc-shaped optical fibers, the dark field detection condition can be satisfied by rotating the semiconductor 45 degrees in the clockwise or counterclockwise direction.
In step S505, each of the optical fiber groups is sequentially lit to form a dark field detection image under irradiation of each of the optical fiber groups. Note that, in the present embodiment, the content of step S505 is identical to step S303 and step S403 in the previous embodiment, and will not be described here again.
In step S506, the optical fiber groups required for dark field detection are determined from the dark field detection image irradiated by each optical fiber group. In this embodiment, the content of step S506 is identical to that of step S304 and step S404 in the previous embodiment, and will not be described here again.
It should be further noted that the illumination control method shown in fig. 5 is equally applicable to the semiconductor dark field detection method described above in connection with fig. 4, and thus the features described above in connection with fig. 5 may be applied in the embodiment in connection with fig. 4.
In summary, embodiments of the present disclosure provide an illumination device for semiconductor dark field detection, which can implement multi-section distinguishable control of light extraction by means of a segmented annular optical fiber. In particular, the light sources on the opposite sides, which generate the reflection phenomenon of the lamp beads, can be controlled to be turned off during detection, so that the other light sources on the two sides are used for detection, and the imaging uniformity is ensured. The imaging quality of the detection image is improved through uniform, stable and flexible illumination control, and the reliability and accuracy of the defect result are further improved.
The embodiment of the disclosure also provides a detection system for detecting a semiconductor dark field, which uses an illumination device with a segmented annular optical fiber to provide a detection light source, so as to eliminate the light reflection phenomenon of a lamp bead which is easy to occur in dark field detection. By using a multi-segment controllable lighting device, the defect detection capability of the detection system is improved.
In order to implement the method steps of the disclosure described above in connection with the accompanying drawings at the software and hardware level, the embodiment of the disclosure further provides an electronic device as shown in fig. 6. In particular, fig. 6 shows an exemplary block diagram of an electronic device 600 of an embodiment of the disclosure.
As shown in fig. 6, an electronic device 600 of the present disclosure may include a processor 610 and a memory 620. Specifically, the memory 620 has stored thereon executable program instructions. The program instructions, when executed by the processor 610, cause the electronic device to perform the method steps as described above in connection with fig. 3-5.
It will be appreciated that, to clearly illustrate aspects of the present disclosure and avoid obscuring the prior art, the electronic device 600 of fig. 6 only shows constituent elements relevant to embodiments of the present disclosure, while omitting those constituent elements that may be necessary to practice embodiments of the present disclosure but fall within the prior art scope. Accordingly, based on the present disclosure, one of ordinary skill in the art will clearly appreciate that the electronic device 600 of the present disclosure may also include common constituent elements that are different from those illustrated in fig. 6.
In an exemplary implementation scenario, the processor 610 described above may control the overall operation of the electronic device 600. For example, the processor 610 may control the operation of the electronic device 600 by executing programs stored in the memory 620. In terms of implementation, the processor 610 of the present disclosure may be implemented as a Central Processing Unit (CPU), an application processor (Application Processor, AP), an artificial intelligence processor chip (Intelligent Processing Unit, IPU), or the like provided in the electronic device 600. Further, the processor 610 of the present disclosure may also be implemented in any suitable manner. For example, the processor 610 may take the form of, for example, a microprocessor or processor, and a computer-readable medium storing computer-readable program code (e.g., software or firmware) executable by the (micro) processor, logic gates, switches, application specific integrated circuits (Application Specific Integrated Circuit, ASIC), a programmable logic controller, and an embedded microcontroller, among others.
In terms of storage, the memory 620 may be used to store hardware for various data, instructions that are processed in the electronic device 600. For example, the memory 620 may store processed data and data to be processed in the electronic device 600. The memory 620 may store data sets that have been processed or are to be processed by the processor 610. Further, the memory 620 may store applications, drivers, etc. to be driven by the electronic device 600. For example: memory 620 may store various programs for scribe line identification, defect detection, and the like to be executed by processor 610. The memory 620 may be a DRAM, but the present disclosure is not limited thereto. By type, the memory 620 may include at least one of volatile memory or non-volatile memory. The nonvolatile memory may include Read Only Memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), flash memory, phase change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), ferroelectric RAM (FRAM), and the like. Volatile memory can include Dynamic RAM (DRAM), static RAM (SRAM), synchronous DRAM (SDRAM), PRAM, MRAM, RRAM, ferroelectric RAM (FeRAM), and the like. In an embodiment, the memory 620 may include at least one of a Hard Disk Drive (HDD), a Solid State Drive (SSD), a high density flash memory (CF), a Secure Digital (SD) card, a Micro-secure digital (Micro-SD) card, a Mini-secure digital (Mini-SD) card, an extreme digital (xD) card, a cache (caches), or a memory stick.
In summary, specific functions implemented by the memory 620 and the processor 610 of the electronic device 600 provided in the embodiments of the present disclosure may be explained in comparison with the foregoing embodiments in the present disclosure, and may achieve the technical effects of the foregoing embodiments, which will not be repeated herein.
Additionally or alternatively, the disclosure may also be embodied as a non-transitory machine-readable storage medium (or computer-readable storage medium, or machine-readable storage medium) having stored thereon computer program instructions (or computer programs, or computer instruction code) which, when executed by a processor of an electronic device (or electronic device, server, etc.), cause the processor to perform part or all of the steps of the above-described methods according to the disclosure.
While various embodiments of the present disclosure have been shown and described herein, it will be obvious to those skilled in the art that such embodiments are provided by way of example only. Numerous modifications, changes, and substitutions will occur to those skilled in the art without departing from the spirit and scope of the present disclosure. It should be understood that various alternatives to the embodiments of the disclosure described herein may be employed in practicing the disclosure. The appended claims are intended to define the scope of the disclosure and are therefore to cover all equivalents or alternatives falling within the scope of these claims.
Claims (9)
1. A lighting device for semiconductor dark field detection, comprising:
a ring-shaped optical fiber (10) comprising two groups of optical fibers, wherein the ring-shaped optical fiber (10) is composed of four segments of arc-shaped optical fibers having equal arc lengths and equal central angles of pairs, and wherein two segments of arc-shaped optical fibers at opposite positions constitute one group of optical fibers; and
-a control element (20) connected to the annular optical fiber (10) and configured to: and selecting one group of light-up optical fiber groups from the two groups of optical fibers according to the cutting path direction of the core particles in the semiconductor to serve as a dark field detection light source of the semiconductor.
2. A detection system for semiconductor dark field detection, comprising:
the illumination device of claim 1 for illuminating a semiconductor to form a detection beam;
a detection lens group (30) for receiving a reflected light beam formed by reflecting the detection light beam from the semiconductor surface; and
an imaging element (40) for receiving the reflected light beam from the detection lens group to form a detection image.
3. The detection system according to claim 2, wherein a control element (20) in the illumination device is connected to the imaging element (40) and configured to:
acquiring a bright field detection image of the first semiconductor under a bright field detection light source from the imaging element;
identifying the cutting path direction according to the bright field detection image;
sequentially illuminating each optical fiber group in response to the cutting channel direction meeting a dark field detection condition so as to form a dark field detection image under the irradiation of each optical fiber group; and
and determining the optical fiber groups required by dark field detection according to the dark field detection image irradiated by each optical fiber group.
4. The detection system of claim 3, wherein the dark field detection condition includes a requirement that a scribe line be present in the first semiconductor, the scribe line being oriented parallel to the arc height of one of the looped optical fibers.
5. A detection system according to claim 3, wherein after identifying the cutting track direction from the bright field detection image, the control element is further configured to:
and in response to the dicing street direction not meeting the dark field detection condition, rotating the first semiconductor to adjust the dicing street direction so as to meet the dark field detection condition.
6. A detection system according to claim 3, wherein after determining the set of optical fibers required for dark field detection, the control element is further configured to:
illuminating the optical fiber group required by dark field detection to serve as a dark field detection light source of the second semiconductor; wherein the placing posture of the second semiconductor is consistent with the placing posture of the first semiconductor under a dark field detection light source, and the model of the second semiconductor is consistent with the model of the first semiconductor;
acquiring a dark field detection image formed by the second semiconductor under a dark field detection light source; and
and performing defect detection according to the dark field detection image of the second semiconductor.
7. The detection system of claim 3, wherein prior to acquiring a bright field detection image of the first semiconductor under a bright field detection light source from the imaging element, the control element is further configured to:
and illuminating all optical fiber groups in the annular optical fiber to form a bright field detection light source.
8. The detection system of claim 5, further comprising: a robotic arm or rotatable stage coupled to the control element;
in rotating the first semiconductor, the control element is further configured to:
controlling the mechanical arm to rotate the first semiconductor or controlling the rotatable stage to rotate.
9. The detection system of claim 2, wherein the detection lens group comprises: the imaging device comprises a barrel lens (32) and an objective lens (31), wherein the imaging element (40), the barrel lens (32) and the objective lens (31) are sequentially arranged along an optical axis, and the annular optical fiber (10) is sleeved on the outer peripheral surface of the objective lens (31).
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