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CN117172071B - A rapid thermal analysis method for chips based on advanced process packaging structure - Google Patents

A rapid thermal analysis method for chips based on advanced process packaging structure Download PDF

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CN117172071B
CN117172071B CN202311243465.5A CN202311243465A CN117172071B CN 117172071 B CN117172071 B CN 117172071B CN 202311243465 A CN202311243465 A CN 202311243465A CN 117172071 B CN117172071 B CN 117172071B
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CN117172071A (en
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祁佑民
张蝶
王西鼎
俞经淘
贺青
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Tongji University
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Abstract

本发明涉及集成电路热分析技术,提出了一种基于先进工艺封装结构下的芯片快速热分析方法,包括步骤:步骤1:先离散集成电路封装结构,再构建热分析系统;步骤2:使用LR‑ADI进行分解计算;步骤3:进行SVD分解;步骤4:计算状态空间转移矩阵;步骤5:截断处理;步骤6:构建降阶热分析模型;步骤7:求解微分方程组;步骤8:计算芯片核心温度。本发明使用模型降阶方法进行热仿真的方式,在保证一定精度下,有效地提升运行效率,达到温度预测、仿真闭环的目的。

The present invention relates to integrated circuit thermal analysis technology, and proposes a fast thermal analysis method for chips based on advanced process packaging structure, including the following steps: Step 1: discretize the integrated circuit packaging structure first, and then build a thermal analysis system; Step 2: use LR-ADI to perform decomposition calculation; Step 3: perform SVD decomposition; Step 4: calculate the state space transfer matrix; Step 5: truncation processing; Step 6: construct a reduced-order thermal analysis model; Step 7: solve a set of differential equations; Step 8: calculate the core temperature of the chip. The present invention uses a model reduction method to perform thermal simulation, which effectively improves the operating efficiency while ensuring a certain accuracy, and achieves the purpose of temperature prediction and closed-loop simulation.

Description

Chip rapid thermal analysis method based on advanced technology packaging structure
Technical Field
The invention relates to an integrated circuit thermal analysis technology, which can be applied to dynamic temperature control management of EDA and chips.
Background
Temperature is an important factor affecting chip performance. In the chip, when current flows through the conductor, joule heat is inevitably generated, and if heat is not normally and timely dissipated, the temperature of the chip is rapidly increased. If the temperature is too high, the probability of short circuit caused by breakdown of a transistor can be increased due to overheat excitation of high-energy carriers when the integrated circuit works, the performance of the transistor can change along with the temperature, part of the circuit can not work normally due to the performance change at high temperature, and the service life of a lead is reduced due to high-temperature electromigration promotion.
Contemporary 3D packaging techniques and other innovative integrated packaging methods, while offering advantages, introduce some important issues regarding thermal analysis, including issues such as thermal coupling effects, temperature non-uniformity, design limiting heat dissipation paths, selection of thermally conductive materials, etc.
In order to ensure that the IC system cannot damage a hardware structure due to high temperature in the operation process, a dynamic heat management technology is particularly important, in the dynamic heat management technology, power consumption, temperature and a dynamic regulation algorithm are integrated, a thermal analysis algorithm can conduct rapid thermal simulation calculation according to real-time power consumption data of different positions, the temperature change condition of each part of a chip in a future period is predicted, and then the regulation and control of a DVFS strategy are conducted on parts which are about to exceed a temperature threshold in advance, so that the purpose of protecting the chip is achieved.
Recently, the field of thermal simulation has emerged a number of thermal analysis methods for integrated circuits, including steady state and transient thermal analysis methods, particularly thermal analysis methods for three-dimensional chip and system-in-package. These methods can be largely classified into two major categories, the resolution/semi-resolution type method and the numerical type method.
The analytic/semi-analytic method calculates the temperature distribution of the integrated circuit by constructing a simplified thermal resistance network, and has lower calculation complexity but lower precision.
The numerical method is to solve the ordinary differential equation set obtained after the discretization by a finite element method, a finite volume method, a finite difference method and other discrete integrated circuit heat conduction equations and then by a direct method, an iteration method and other methods. In practice, the numerical method is used to solve the problem of thermal analysis with high accuracy but high computational complexity, which is usually caused by excessive grid numbers in order to ensure accuracy in discrete processes. But in practice, for dynamic thermal temperature control processes, only a few points in the chip, called hotspots, are concerned, and the temperature of all the positions of the chip is not concerned, which gives the model order reduction method a useful choice.
There are two main classes of model order reduction methods, namely a balance method based on singular value decomposition (Singular Value Decomposition, SVD) and a moment matching (Moments Matching) method based on Krylov subspace theory. The moment matching method based on the Krylov subspace theory has the advantages of small calculated amount and high speed in the process of processing the reduction of a large dynamic system, and can match a plurality of moments of the transfer function of the original system at a certain point. By means of moment matching, the complexity of the system can be effectively reduced. However, this approach has some drawbacks. Most importantly, the stability of the reduced order system cannot be guaranteed, and the error range between the reduced order system and the original system is difficult to obtain. The balance method is a reducing method based on a linear system theory concept, and has the advantages that the structural characteristics of a reducing model can be maintained, and the cutting-off and the reducing can be carried out according to the size of singular values of the system. Through a balance method, global error constraint can be set, so that the precision of the model after the order reduction is controlled. However, the balancing method also has some drawbacks, especially when dealing with a large dynamic system, because of the need to solve two Lyapunov equations of higher order, the calculation complexity is higher, and the memory requirement of the computer is also higher.
Disclosure of Invention
Aiming at the problems that the equation scale is too large and quick and effective calculation cannot be realized due to the fact that a numerical method is used for chip thermal simulation in the prior art, the invention provides a chip quick thermal analysis method based on an advanced process packaging structure.
The technical scheme is as follows:
a chip rapid thermal analysis method based on advanced technology packaging structure comprises the following steps:
step 1, firstly, dispersing an integrated circuit packaging structure, and then constructing a thermal analysis system;
step 2, performing decomposition calculation by using LR-ADI;
Step 3, SVD decomposition is carried out;
step 4, calculating a state space transition matrix;
step 5, cutting off;
Step 6, constructing a reduced-order thermal analysis model;
Step 7, solving a differential equation set;
and 8, calculating the core temperature of the chip.
The invention uses a model order reduction method to carry out thermal simulation, effectively improves the operation efficiency under the condition of ensuring certain precision, and achieves the aims of temperature prediction and simulation closed loop.
Drawings
FIG. 1 is a flow chart of a method according to an embodiment of the invention.
FIG. 2 is a graph showing a portion of the eigenvalues used in the balance cut-off error analysis of the test case of the present invention.
FIG. 3 is a graph showing the temperature comparison between the original system and the reduced order system of the test case of the present invention.
Detailed Description
The invention discloses a chip rapid thermal analysis method based on an advanced process packaging structure, which is characterized in that a finite volume method is used for further reducing the order of the packaging structure under the advanced process basically, namely a state space transfer matrix is solved by a balance cut-off method, and an original RC network is projected to a low-order space by cutting off characteristic values under the existing precision and speed limitation according to error theory analysis, so that model order reduction is achieved, and an acceleration operation effect is achieved.
The technical scheme provided by the application is further described below with reference to specific embodiments and attached drawings. The advantages and features of the present application will become more apparent in conjunction with the following description.
Examples
A chip rapid thermal analysis method based on advanced technology packaging structure, as shown in figure 1, comprises the following steps:
step 1, discrete integrated circuit packaging structure and then constructing a thermal analysis system
Step 1.1 spatially discretizes the package structure of the integrated circuit using a finite volume method (Finite Volume Method, FVM) to obtain the following formula:
Wherein G ε R n×n is a thermal conductivity matrix, symmetrically positive, including equivalent thermal conductivity to the boundary, x ε R n represents the temperature of the full-field junction, C ε R n×n is a matrix composed of geothermal energy, u (t) ε R p is a vector composed of the current heat source, E ε R n×p is a correlation matrix of the input heat source and junction temperature.
Note that, among them,
N represents the dimension of the system state space, namely the number of the total points of the system after the chip is subjected to space dispersion;
m represents the dimension of the output vector, namely the number of hotspots;
p represents the dimension of the input vector, i.e. the number of the current heat source nodes.
For hotspots (hotspots), the conversion can be done by:
y(t)=Lx(t)
Wherein y ε R m consists of the hotspot temperature and L ε R m×n is the correlation matrix of state and hotspot temperature.
Step 1.2 converts it to a "linear time independent" system equation (LINEAR TIME-invariant, LTI) to construct a thermal analysis system, as shown in the following formula:
wherein a= -C -1G,B=C-1 E.
Step 2, performing decomposition calculation by using LR-ADI
By adopting a balanced cut-off method, specifically analyzing and observing Gramian a matrix Q and an arrival Gramian matrix P, firstly performing conversion projection of a state space, and solving the conversion projection is equivalent to solving a Lyapunov matrix equation, as follows:
AP+PAT+BBT=0,ATQ+QA+LTL=0
The Lyapunov matrix equation and Low-Rank decomposition are further solved by using an LR-ADI (Low Rank-ALTERNATIVE DIRECTION IMPLICIT) method, namely, the method is converted into the method for solving P (SS) T and Q (RR) T.
Specifically, step 2 includes:
step 2.1 solves for P≡SS T.
Step 2.1.1 specifies a set of shift parameters a 1,And residual tol.
Step 2.1.2 initializes a temporary variable S 0=[],W0 =b, i=1.
Step 2.1.3 sets a circulation condition II W i-12 not less than tol:
Step 2.1.4 solving for (A+α) iI)Vi=Wi-1
Step 2.1.5W i=Wi-1-2Re(αi)Vi
Step 2.1.6 ream
Step 2.1.7 let i=i+1
Steps 2.1.4-2.1.7 are performed in a loop until the loop condition is not met, i.e., iiw i-12 < tol.
When i=s, the loop is terminated, giving S s.
Step 2.1.8 lets s=s s.
Step 2.2 solves for Q≡RR T.
Step 2.2.1 specifies a set of shift parameters a 1,And residual tol.
Step 2.2.2 initializes a temporary variable R 0=[],W0 =l, i=1.
Step 2.2.3 sets a circulation condition II W i-12 not less than tol:
step 2.2.4 solving for (A+α) iI)Vi=Wi-1
Step 2.2.5W i=Wi-1-2Re(αi)Vi
Step 2.2.6 ream
Step 2.2.7 let i=i+1
Steps 2.2.4-2.2.7 are performed in a loop until the loop condition is not met, i.e. iiw i-12 < tol.
When i=s, the cycle ends, yielding R s.
Step 2.2.8 let r=r s.
Step 3, SVD decomposition is carried out
The eigenvalue decomposition (Singular Value Decomposition, SVD) is calculated, with R TS=U∑VT, where Σ=diag (σ 12,…,σn),σi is Hankel eigenvalues (HSVs), which are important values for error estimation in the balanced cut-off method.
Step 4, calculating state space transition matrix
Available state space transition matrixBy transferring the matrix, a new system can be obtainedIs a matrix of observations and arrival of (a)
Performing balance conversion:
Step 5, cutting off
And performing truncation processing according to the error, namely removing the inconveniently observed and inconveniently controlled states to obtain projection matrixes V BT and W BT.
I r represents an identity matrix of order r
Step 6, constructing a reduced order thermal analysis model
A reduced order system (Reduced Order Model, ROM) is available,And
That is, the reduced order system can be expressed as:
Wherein,
Step 7, solving differential equation set
For solving differential equationsThe direct use of the analytical solution is not cost-effective in the transient calculation of the practical application scenario, firstly, it needs to be recalculated for each time of interest, which consumes a lot of calculation resources, secondly, in the analytical solution, it needs to reach a steady-state temperature value of the chip, and in the dynamic temperature control scenario, it needs to predict the temperature according to the different power consumption prediction values, which limits the application of the analytical solution, so in the embodiment, the backward Euler method in the numerical solution is selected to solve, and there is
Where Δt represents the time step.
For the power consumption density, the variation of the sub-field (time step) on the time axis is limited to two cases, including u (t) being kept constant over the interval [ t 0,t0 +Δt ] and u (t) being kept constant over the interval [ t 0,t0 +Δt ]. For both cases, the integration results are identical, so the above formula is simplified as follows:
The discrete iteration format is as follows:
Solving the linear equation set to obtain the corresponding time
Step 8, calculating the core temperature of the chip
The temperature at the core of the chip is
Test case
This example was further tested using MATLAB 2017 b.
After the industrial integrated circuit example is spatially discretized by using a finite volume method, a 59472-order thermal analysis system is formed, 284 sources are used, the reduced-order thermal analysis system is 100-order by adopting a balance cut-off method and an LR-ADI method, 12 outputs are selected and are all core heat sources, the calculated preparation time is removed, and the time acceleration rate is 182 times by adopting an iteration method to solve.
FIG. 2 shows the Hankel eigenvalues used for error analysis of this test case using the balanced cut-off method;
FIG. 3 shows a temperature comparison graph of the original system and the reduced order system, wherein the average error is-0.6918%, and the analysis requirement is met.
The above description is only illustrative of the preferred embodiments of the application and is not intended to limit the scope of the application in any way. Any alterations or modifications of the application, which are obvious to those skilled in the art based on the teachings disclosed above, are intended to be equally effective embodiments, and are intended to be within the scope of the appended claims.

Claims (2)

1.一种基于先进工艺封装结构下的芯片快速热分析方法,其特征在于,包括步骤:1. A rapid thermal analysis method for a chip based on an advanced process packaging structure, characterized by comprising the steps of: 步骤1:先离散集成电路封装结构,再构建热分析系统;Step 1: Discrete the integrated circuit packaging structure first, then build a thermal analysis system; 步骤2:使用LR-ADI进行分解计算;Step 2: Use LR-ADI to perform decomposition calculation; 步骤3:进行SVD分解;Step 3: Perform SVD decomposition; 步骤4:计算状态空间转移矩阵;Step 4: Calculate the state space transfer matrix; 步骤5:截断处理;Step 5: truncation processing; 步骤6:构建降阶热分析模型;Step 6: Construct a reduced-order thermal analysis model; 步骤7:求解微分方程组;Step 7: Solve the differential equations; 步骤8:计算芯片核心温度;Step 8: Calculate the chip core temperature; 所述步骤1包括:The step 1 comprises: 步骤1.1:利用有限体积法FVM对集成电路的封装结构进行空间离散,得下式:Step 1.1: Use the finite volume method FVM to spatially discretize the integrated circuit packaging structure and obtain the following formula: 其中,G∈Rn×n是热导矩阵,对称正定,其中包括与边界的等效热导,x∈Rn表示全场结点的温度,C∈Rn×n是由对地热容组成的矩阵,u(t)∈Rp是当前热源组成的向量,E∈Rn×p是输入热源与结点温度的关联矩阵;Among them, G∈Rn ×n is the thermal conductivity matrix, which is symmetric and positive definite, including the equivalent thermal conductivity with the boundary, x∈Rn represents the temperature of the node in the whole field, C∈Rn ×n is the matrix composed of the ground heat capacity, u(t) ∈Rp is the vector composed of the current heat source, and E∈Rn ×p is the association matrix between the input heat source and the node temperature; n表示系统状态空间的维数,即为芯片经过空间离散之后系统的总结点个数;n represents the dimension of the system state space, that is, the number of summary points of the system after the chip is spatially discretized; m表示输出向量的维数,即为hotspot的个数;m represents the dimension of the output vector, that is, the number of hotspots; p表示输入向量的维数,即为当前热源结点的个数;p represents the dimension of the input vector, that is, the number of current heat source nodes; 对于热点hotspot,通过如下式进行转换:For hotspot, the conversion is performed as follows: y(t)=Lx(t)y(t)=Lx(t) 其中,y∈Rm由hotspot的温度组成,L∈Rm×n为状态与hotspot温度的关联矩阵;Among them, y∈R m consists of the temperature of the hotspot, and L∈R m×n is the association matrix between the state and the hotspot temperature; 步骤1.2将其转换为“线性时无关”系统方程,从而构建热分析系统,如下式所示:Step 1.2 converts it into a "linear time-independent" system equation to construct a thermal analysis system, as shown below: 其中,A=-C-1G,B=C-1E;Where A = -C -1 G, B = C -1 E; 所述步骤2:Step 2: 采用平衡截断法,具体分析观测Gramian矩阵Q与到达Gramian矩阵P,首先进行状态空间的转换投影,其求解等价于求解Lyapunov矩阵方程,如下:The balanced truncation method is used to specifically analyze the observed Gramian matrix Q and the arrival Gramian matrix P. First, the transformation projection of the state space is performed. Its solution is equivalent to solving the Lyapunov matrix equation, as follows: AP+PAT+BBT=0,ATQ+QA+LTL=0AP+PA T +BB T =0,A T Q+QA+L T L=0 进一步使用LR-ADI方法求解Lyapunov矩阵方程与低秩分解,即转为求解P≈SST与Q≈RRTThe LR-ADI method is further used to solve the Lyapunov matrix equation and low-rank decomposition, that is, to solve P≈SS T and Q≈RR T ; 所述步骤3:Step 3: 计算特征值分解SVD,有RTS=U∑VT,其中Σ=diag(σ12,…,σn),σi为Hankel特征值,此为平衡截断法中误差估计的重要数值;Calculate the eigenvalue decomposition SVD, and we have R T S = U ∑ V T , where Σ = diag (σ 1 , σ 2 , …, σ n ), σ i is the Hankel eigenvalue, which is an important value for error estimation in the balanced truncation method; 所述步骤4:Step 4: 状态空间转移矩阵通过转移矩阵,得新系统的观测与到达矩阵 State Space Transfer Matrix Through the transfer matrix, we get the new system The observation and arrival matrix 进行平衡转换: To perform a balanced conversion: 所述步骤5:Step 5: 根据误差进行截断处理,即将不便观测到的与不便控制的状态去除掉,得投影矩阵VBT与WBTAccording to the error, truncation processing is performed, that is, the states that are inconvenient to observe and control are removed, and the projection matrices V BT and W BT are obtained; 其中,Ir表示r阶的单位矩阵;Where Ir represents the r-order identity matrix; 所述步骤6:Step 6: 降阶系统ROM, Downgrade system ROM, and 即,降阶系统表示为:That is, the reduced-order system is expressed as: 其中, in, 所述步骤7:Step 7: 对于求解微分方程组选择使用数值解法中的后向欧拉法进行求解,有For solving the differential equations We choose to use the backward Euler method in the numerical solution to solve the problem. 其中,Δt表示时间步长;Among them, Δt represents the time step; 对于功耗密度而言,通过时间轴上子域时间步的合适划分,将其变化限制在两种情况内,包括u(t)在区间[t0,t0+Δt]上保持不变与u(t)在区间[t0,t0+Δt)上保持不变;对于这两种情况而言,其积分结果一致,故上式化简如下:For power consumption density, by appropriately dividing the sub-domain time steps on the time axis, its change is limited to two cases, including u(t) remaining unchanged in the interval [t 0 ,t 0 +Δt] and u(t) remaining unchanged in the interval [t 0 ,t 0 +Δt); for these two cases, the integral results are the same, so the above formula is simplified as follows: 离散迭代格式如下:The discrete iteration format is as follows: 求解如上线性方程组,得对应时刻的 Solve the above linear equations and get the corresponding time 所述步骤8:Step 8: 芯片核心处温度为 The chip core temperature is 2.如权利要求1所述的方法,其特征在于,所述步骤2包括:2. The method according to claim 1, wherein step 2 comprises: 步骤2.1求解P≈SST Step 2.1 Solve P≈SS T 步骤2.1.1指定一组移位参数与残差tol;Step 2.1.1 Specify a set of shift parameters and residual tol; 步骤2.1.2初始化临时变量S0=[],W0=B,o=1;Step 2.1.2 Initialize temporary variables S 0 = [], W 0 = B, o = 1; 步骤2.1.3设定循环条件‖Wi-12≥tol:Step 2.1.3 Set the loop condition ‖W i-12 ≥tol: 步骤2.1.4求解(A+αiI)Vi=Wi-1Step 2.1.4 Solve (A+α i I)V i =W i-1 ; 步骤2.1.5令Wi=Wi-1-2Re(αi)ViStep 2.1.5 Let Wi = Wi -1 -2Re(α i )V i ; 步骤2.1.6令 Step 2.1.6: 步骤2.1.7令o=o+1Step 2.1.7 Let o = o + 1 循环执行步骤2.1.4-2.1.7,直到循环条件不满足跳出,即‖Wi-12<tol;Loop through steps 2.1.4-2.1.7 until the loop condition is no longer satisfied, i.e. ‖W i-12 <tol; 当i=s时,循环终止,得SsWhen i=s, the loop terminates and S s is obtained; 步骤2.1.8令S=SsStep 2.1.8 Let S = S s ; 步骤2.2求解Q≈RRT Step 2.2 Solve Q≈RR T 步骤2.2.1指定一组移位参数与残差tol;Step 2.2.1 Specify a set of shift parameters and residual tol; 步骤2.2.2初始化临时变量R0=[],W0=L,i=1;Step 2.2.2 Initialize temporary variables R 0 = [], W 0 = L, i = 1; 步骤2.2.3设定循环条件‖W-12≥tol:Step 2.2.3 Set the cycle condition ‖W -12 ≥tol: 步骤2.2.4求解(A+αiI)Vi=Wi-1Step 2.2.4 Solve (A+α i I)V i =W i-1 ; 步骤2.2.5令Wi=Wi-1-2Re(αi)ViStep 2.2.5 Let Wi = Wi -1 -2Re(α i )V i ; 步骤2.2.6令 Step 2.2.6: 步骤2.2.7令i=i+1Step 2.2.7 Let i = i + 1 循环执行步骤2.2.4-2.2.7,直到循环条件不满足跳出,即‖Wi-12<tol;Loop through steps 2.2.4-2.2.7 until the loop condition is no longer satisfied, i.e. ‖W i-12 <tol; 当i=s时,循环终止,得RsWhen i=s, the loop terminates and R s is obtained; 步骤2.2.8令R=RsStep 2.2.8 Let R = R s .
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