CN117168546B - Temperature and pressure combined sensor, preparation method thereof and packaging structure - Google Patents
Temperature and pressure combined sensor, preparation method thereof and packaging structure Download PDFInfo
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- CN117168546B CN117168546B CN202311442947.3A CN202311442947A CN117168546B CN 117168546 B CN117168546 B CN 117168546B CN 202311442947 A CN202311442947 A CN 202311442947A CN 117168546 B CN117168546 B CN 117168546B
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Abstract
The application provides a temperature and pressure combined sensor, a preparation method thereof and a packaging structure. Wherein, warm-pressing combined type sensor includes: a first substrate; the second substrate is arranged opposite to the first substrate, and a cavity is enclosed by the second substrate and the first substrate; the pressure sensitive resistor is positioned in the cavity; and the temperature sensitive resistor is positioned outside the cavity. The utility model provides a temperature and pressure combined type sensor can carry out temperature and pressure's simultaneous measurement, and under the prerequisite that has improved temperature measurement's accuracy, has improved temperature and pressure combined type sensor's reliability and stability simultaneously, can measure the pressure from different directions simultaneously, can also avoid the interference of temperature to pressure measurement result to improve pressure measurement's accuracy.
Description
Technical Field
The application relates to the field of sensors, in particular to a temperature and pressure combined sensor, a preparation method thereof and a packaging structure.
Background
The existing force sensor principle based on MEMS (Micro-Electro-Mechanical System) technology is piezoresistive and capacitive, wherein the piezoresistive sensor is widely applied to the fields of consumer electronics, wearable equipment, smart home, medical treatment, automobile electronics and industrial control by high sensitivity and excellent linearity.
Although in some applications piezoresistive pressure sensors are used to monitor both pressure and temperature. However, the temperature and the pressure can cause resistance change, and the signals of the temperature and the pressure are difficult to separate, so that in practical application, the piezoresistive pressure sensor cannot accurately measure the temperature and has low reliability and stability.
Disclosure of Invention
The utility model provides a temperature and pressure combined type sensor can realize the measurement of pressure and temperature simultaneously, and under the prerequisite that has improved temperature measurement's accuracy, has improved temperature and pressure combined type sensor's reliability and stability simultaneously. In addition, the application also provides a preparation method of the temperature-pressure composite sensor, the temperature-pressure composite sensor prepared by the preparation method can realize measurement of pressure and temperature at the same time, and the reliability and the stability of the temperature-pressure composite sensor are improved on the premise of improving the accuracy of temperature measurement. In addition, the application also provides a temperature and pressure combined type sensor packaging structure, pressure and temperature can be measured simultaneously, and on the premise of improving the accuracy of temperature measurement, the reliability and the stability of the temperature and pressure combined type sensor are improved simultaneously.
The application provides a warm-pressing combined type sensor, include:
a first substrate;
the second substrate is arranged opposite to the first substrate, and a cavity is enclosed by the second substrate and the first substrate;
the pressure sensitive resistor is positioned in the cavity;
and the temperature sensitive resistor is positioned outside the cavity.
In some embodiments, the first substrate or the second substrate has a groove, and the first substrate and the second substrate enclose a cavity.
In some embodiments, the first and second substrates have grooves, the first and second substrates enclosing a cavity.
In some embodiments, the temperature and pressure compound sensor further comprises a support column located between the first substrate and the second substrate, the support column enclosing a cavity with the first substrate and the second substrate.
In some embodiments, the support posts cover the temperature sensitive resistor when the temperature sensitive resistor is located outside the cavity.
In some embodiments, the temperature and pressure compound sensor has a first deformation region located at a region where the first substrate or the second substrate overlaps the cavity.
In some embodiments, when the first deformation region is located in the region where the first substrate and the cavity overlap, the material of the first substrate is a flexible material, and the material of the second substrate is a hard material or a flexible material;
when the first deformation area is located in the area where the second substrate and the cavity are overlapped, the second substrate is made of a flexible material, and the first substrate is made of a hard material or a flexible material.
In some embodiments, the temperature and pressure compound sensor has a first deformation region and a second deformation region, the first deformation region being located at a region where the first substrate overlaps the cavity; the second deformation region is located in a region where the second substrate overlaps the cavity.
In some embodiments, the first substrate and the second substrate are made of flexible materials.
In some embodiments, the pressure sensitive resistor is located on the first substrate or the second substrate when the temperature sensitive resistor is located outside the cavity.
In some embodiments, the pressure sensitive resistor is located on the first substrate and the second substrate when the temperature sensitive resistor is located outside the cavity.
In some embodiments, the material of the temperature sensitive resistor comprises at least one of pure copper and monocrystalline silicon; the material of the pressure sensitive resistor comprises at least one of constantan and monocrystalline silicon.
In some embodiments, the pressure measurement range of the temperature and pressure combined sensor is 0-5 MPa; the temperature measurement range of the temperature-pressure composite sensor is 40-125 ℃ below zero.
Correspondingly, the application also provides a preparation method of the temperature and pressure combined sensor, which comprises the following steps:
providing a first substrate;
providing a second substrate, wherein the second substrate is arranged opposite to the first substrate, and a cavity is enclosed by the second substrate and the first substrate;
forming a pressure sensitive resistor, wherein the pressure sensitive resistor is positioned in the cavity;
and forming a temperature sensitive resistor, wherein the temperature sensitive resistor is positioned outside the cavity.
In some embodiments, the first substrate or the second substrate has a groove, and the first substrate and the second substrate enclose a cavity.
In some embodiments, the first and second substrates have grooves, the first and second substrates enclosing a cavity.
In some embodiments, prior to the step of forming the pressure sensitive resistor, further comprising:
and forming a support column, wherein the support column is positioned between the first substrate and the second substrate, and a cavity is enclosed by the support column, the first substrate and the second substrate.
In some embodiments, the support posts cover the temperature sensitive resistor when the temperature sensitive resistor is located outside the cavity.
In some embodiments, the step of forming a pressure sensitive resistor when the temperature sensitive resistor is located outside the cavity comprises:
a pressure sensitive resistor is formed on the first substrate or the second substrate.
In some embodiments, the step of forming a pressure sensitive resistor when the temperature sensitive resistor is located outside the cavity comprises:
pressure sensitive resistors are formed on the first and second substrates.
Correspondingly, the application also provides a temperature and pressure combined type sensor packaging structure, which comprises the temperature and pressure combined type sensor as described above; or the temperature and pressure composite sensor is prepared by adopting the preparation method of the temperature and pressure composite sensor.
The application provides a temperature and pressure combined sensor, a preparation method thereof and a temperature and pressure combined sensor packaging structure; wherein temperature and pressure combined type sensor includes: a first substrate; the second substrate is arranged opposite to the first substrate, and a cavity is enclosed by the second substrate and the first substrate; the pressure sensitive resistor is positioned in the cavity; and the temperature sensitive resistor is positioned outside the cavity. According to the temperature-pressure composite sensor, the pressure sensitive resistor is sensitive to pressure, the temperature sensitive resistor is sensitive to temperature, temperature and pressure can be measured simultaneously, the cavity provides a deformation space for the stress deformation of the pressure sensitive resistor, and when the temperature sensitive resistor is located outside the cavity, the deformation of the cavity cannot influence the temperature sensitive resistor, so that the accuracy of the temperature sensitive resistor is improved; further, when the edge of the sensor is bent and pressed, the deformation of the bonding area where the temperature sensitive resistor is located is smaller than that of the cavity area, so that the fatigue of the temperature sensitive resistor material can be effectively reduced, the risk of fracture of the temperature sensitive resistor material is further reduced, and the reliability of the sensor is improved; according to the temperature-sensitive resistor, the temperature-sensitive resistor is arranged outside the cavity, so that the creep degree of a temperature-sensitive resistor material can be effectively reduced, and the stability of a sensor signal is improved; according to the temperature-sensitive resistor, the zero Offset can be reduced by arranging the temperature-sensitive resistor outside the cavity, so that the consistency of products is improved; when the temperature sensitive resistor is positioned outside the cavity, the bonding area outside the cavity is effectively utilized, and under the condition that the areas are the same, more resistor strips can be arranged in the sensor, so that the area utilization rate is effectively improved; in addition, under the condition that the whole area of the sensor is unchanged, more temperature sensitive resistors and pressure sensitive resistors can be arranged in the sensor, and as the number of the temperature sensitive resistors and the pressure sensitive resistors is increased, the current passing through the sensor is reduced under the condition that the applied voltage is the same, so that the power consumption of the sensor can be reduced; furthermore, under the condition that the arranged resistor strips are unchanged, the size of the sensor can be reduced, namely more sensors can be manufactured under the same area, and the sensor is suitable for measuring environments with smaller areas; according to the sensor, the pressure sensitive resistor is arranged in the cavity, when the temperature sensitive resistor is positioned outside the cavity, the pressure sensitive resistor and the temperature sensitive resistor are separately arranged, the circuit is prevented from being staggered, the signal interference between the pressure sensitive resistor and the temperature sensitive resistor is reduced, and the reliability and the stability of the sensor are effectively improved; the support columns are arranged between the first substrate and the second substrate, so that the pressure from different directions can be measured; the temperature sensitive resistor can also be used as a reference resistor of the pressure sensitive resistor, so that the interference of temperature on a pressure measurement result can be avoided, and the accuracy of pressure measurement is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a temperature and pressure composite sensor provided in the present application;
FIG. 2 is a cross-sectional view along line AB of a first temperature and pressure compound sensor provided herein;
FIG. 3 is a cross-sectional view along line AB of a second temperature and pressure compound sensor provided herein;
FIG. 4 is a cross-sectional view along line AB of a third temperature and pressure compound sensor provided herein;
FIG. 5 is a cross-sectional view along line AB of a fourth temperature and pressure compound sensor provided herein;
FIG. 6 is a cross-sectional view along line AB of a fifth temperature and pressure compound sensor provided herein;
FIG. 7 is a cross-sectional view along line AB of a sixth temperature and pressure compound sensor provided herein;
FIG. 8 is a cross-sectional view along line AB of a seventh temperature and pressure compound sensor provided herein;
FIG. 9 is a first stress state diagram of the temperature and pressure compound sensor provided by the present application;
FIG. 10 is a second stress state diagram of the temperature and pressure compound sensor provided by the present application;
FIG. 11 is a third stress state diagram of the temperature and pressure compound sensor provided by the present application;
FIG. 12 is a top view of a fifth temperature and pressure compound sensor provided herein;
FIG. 13 is a circuit diagram of a temperature and pressure compound sensor provided by the present application;
FIG. 14 is a flow chart of a method for manufacturing a temperature and pressure composite sensor provided by the present application;
FIG. 15 is a schematic view of a structure for forming a pressure sensitive film on a first substrate;
FIG. 16 is a schematic diagram of a structure for forming a pressure sensitive resistor on a first substrate;
FIG. 17 is a schematic view of a structure of forming a temperature sensitive film on a first substrate;
fig. 18 is a schematic structural diagram of forming a temperature sensitive resistor on a first substrate.
In the drawings, the components represented by the respective reference numerals are as follows:
1000. a temperature and pressure combined sensor; 10. a first substrate; 20. a second substrate; 30. a cavity; 301. a groove; 31. a first deformation region; 32. a second deformation region; 40. a pressure sensitive resistor; 401. a pressure sensitive membrane; 50. a temperature sensitive resistor; 501. a temperature sensitive film; 60. a support column; 100. a power supply; 200. a grounding end; 300. a first output terminal; 400. and a second output terminal.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The terms "first," "second," "third," "fourth," and the like herein do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The terms of directions such as up, down, left, and right are referred to in this application only with reference to the attached drawings. Therefore, the use of numerical, directional and positional relationship terms is intended to illustrate and understand the present application, and is not intended to limit the present application. In the drawings, like structural elements are denoted by like reference numerals.
The embodiment of the present application provides a temperature and pressure combined sensor 1000, and the detailed description of the present application will be provided below with reference to specific embodiments.
Referring to fig. 1-8, a temperature-pressure composite sensor 1000 includes a first substrate 10, a second substrate 20, a pressure sensitive resistor 40, and a temperature sensitive resistor 50, wherein the second substrate 20 is disposed opposite to the first substrate 10, and a cavity 30 is enclosed by the second substrate 20 and the first substrate 10; a pressure sensitive resistor 40 is located within the cavity 30; a temperature sensitive resistor 50 is located outside the cavity 30. In particular, the cavity 30 provides room for deformation of the pressure sensitive resistor 40.
It can be understood that when the pressure sensitive resistor 40 is deformed due to the force, the length and the cross-sectional area of the pressure sensitive resistor 40 are changed, so that the resistance value of the pressure sensitive resistor 40 is changed; the change in the resistance value of the pressure sensitive resistor 40 causes a change in the electrical signal, so that the magnitude of the external pressure can be reflected. When the external temperature changes, the resistance value of the temperature sensitive resistor 50 is further changed; the change of the resistance value of the temperature sensitive resistor 50 causes the change of the electric signal, so that the magnitude of the external temperature can be reflected. The temperature and pressure combined type sensor can measure temperature and pressure simultaneously.
According to the temperature-sensitive resistor and the manufacturing method thereof, the cavity 30 is enclosed by the second substrate 20 and the first substrate 10, the pressure-sensitive resistor 40 is arranged in the cavity 30, the temperature-sensitive resistor 50 is positioned outside the cavity 30, the cavity 30 provides a deformation space for the forced deformation of the pressure-sensitive resistor 40, and when the temperature-sensitive resistor 50 is positioned outside the cavity 30, the deformation of the cavity 30 can not influence the temperature-sensitive resistor 50, so that the accuracy of the temperature-sensitive resistor 50 is improved; further, when the edge of the sensor is bent and pressed, the deformation of the bonding area where the temperature sensitive resistor 50 is positioned is smaller than that of the cavity area, so that the fatigue of the temperature sensitive resistor 50 material can be effectively reduced, the risk of breakage of the temperature sensitive resistor 50 material is further reduced, and the reliability of the sensor is improved; it can be understood that creep may cause the resistance of the resistive material to change along with the temperature change rate TCR and other physical properties, and by disposing the temperature sensitive resistor 50 outside the cavity 30, the creep degree of the temperature sensitive resistor 50 material may be effectively reduced, thereby improving the stability of the sensor signal; it can be understood that, because the sensor manufacturing process may cause different sensors due to unstable process, deformation generated by the pressed area of the sensor is different, if the temperature sensitive resistor 50 is arranged in the cavity 30, the deformation can cause the change of the temperature sensitive resistor, and further cause the change of the resistor in the initial state, and finally different zero offsets are generated, if the pressed area is avoided, the zero offsets generated by the sensors are more concentrated, and the zero Offset can be reduced by arranging the temperature sensitive resistor 50 outside the cavity 30, so that the consistency of products is improved; further, when the temperature sensitive resistor 50 is located outside the cavity 30, bonding areas outside the cavity 30 are effectively utilized, and under the condition that the areas are the same, more resistor strips can be arranged in the sensor, so that the area utilization rate is effectively improved; in addition, in the case that the entire area of the sensor is unchanged, more temperature sensitive resistors 50 and pressure sensitive resistors 40 can be arranged in the sensor, and as the number of the two resistors increases, the current passing through the sensor is reduced under the condition that the applied voltage is the same, so that the power consumption of the sensor can be reduced. Furthermore, under the condition that the arranged resistor strips are unchanged, the size of the sensor can be reduced, namely more sensors can be manufactured under the same area, and the sensor is suitable for measuring environments with smaller areas; in addition, by arranging the pressure sensitive resistor 40 in the cavity 30 and when the temperature sensitive resistor 50 is positioned outside the cavity 30, the pressure sensitive resistor 40 and the temperature sensitive resistor 50 are separately arranged, so that the circuit interleaving is avoided, the signal interference between the pressure sensitive resistor 40 and the temperature sensitive resistor 50 is reduced, and the reliability and the stability of the sensor are effectively improved; in addition, when the temperature sensitive resistor 50 is positioned outside the cavity 30, the temperature sensitive resistor can be directly contacted with a measuring object, so that the temperature can be measured more accurately and rapidly, and the sensitivity of temperature measurement is improved.
As shown in fig. 2, in some embodiments, the first substrate 10 or the second substrate 20 has a groove 301, and the first substrate 10 and the second substrate 20 enclose a cavity 30. It can be appreciated that the cavity 30 is formed by grooving the first substrate 10 or the second substrate 20 and then covering the first substrate 10 and the second substrate 20.
As shown in fig. 3, in some embodiments, the first and second substrates 10 and 20 have grooves 301, and the first and second substrates 10 and 20 enclose a cavity 30. It can be appreciated that the cavity 30 is formed by simultaneously grooving the first substrate 10 and the second substrate 20 and then covering the first substrate 10 and the second substrate 20.
In some embodiments, as shown in fig. 3, the depth of the grooves 301 on the first substrate 10 is equal to the depth of the grooves 301 on the second substrate 20.
In some embodiments, the depth of the grooves 301 on the first substrate 10 is greater than or less than the depth of the grooves 301 on the second substrate 20.
As shown in fig. 4-8, in some embodiments, the temperature and pressure combined sensor 1000 further includes a support column 60, the support column 60 being located between the first substrate 10 and the second substrate 20, the support column 60 enclosing the cavity 30 with the first substrate 10 and the second substrate 20. It will be appreciated that the cavity 30 is defined by the provision of support columns 60 between the first and second substrates 10, 20.
In some embodiments, support column 60 is a flexible material. Specifically, the material of the support columns 60 includes one or more of Polyimide (PI), polydimethylsiloxane (PDMS), polyvinyl alcohol (polyvinyl alcohol, PVA), acrylic (Acrylic), epoxy (Epoxy), phenolic butyral (Phenolic Butyrals), and SU-8 photoresist.
As shown in fig. 4-5, 6-8, and 12, in some embodiments, support columns 60 cover temperature-sensitive resistor 50 when temperature-sensitive resistor 50 is outside of cavity 30. It will be appreciated that when the temperature sensitive resistor 50 is located outside the cavity 30, the influence of deformation of the cavity 30 due to stress on the temperature sensitive resistor 50 can be reduced, so that the temperature measurement has higher accuracy.
In addition, when the temperature sensitive resistor 50 is located outside the cavity 30, and the support column 60 covers the temperature sensitive resistor 50, the temperature sensitive resistor 50 only causes a change in resistance value when the temperature changes, and the pressure sensitive resistor 40 also generates a tiny deformation when the temperature changes, so as to cause a change in resistance value, at this time, the temperature sensitive resistor 50 can be used as a reference resistor of the pressure sensitive resistor 40 to calibrate the pressure sensitive resistor 40, so that the accuracy of measuring the pressure sensitive resistor 40 is improved, and the accuracy of measuring the pressure is improved.
As shown in fig. 9-10, in some embodiments, the temperature and pressure combined sensor 1000 has a first deformation region 31, where the first deformation region 31 is located at a region where the first substrate 10 or the second substrate 20 overlaps the cavity 30. It will be appreciated that the deformation region will deform under force, and the cavity 30 can accommodate the deformation of the first deformation region 31 due to the force. When the first deformation region 31 is the region where the first substrate 10 or the second substrate 20 overlaps the cavity 30, the temperature and pressure combined sensor 1000 can only measure the force from the direction of the first substrate 10 or the second substrate 20.
In some embodiments, when the first deformation region 31 is located in the region where the first substrate 10 and the cavity 30 overlap, the material of the first substrate 10 is a flexible material, and the material of the second substrate 20 is a hard material or a flexible material; when the first deformation region 31 is located in the region where the second substrate 20 and the cavity 30 overlap, the material of the second substrate 20 is a flexible material, and the material of the first substrate 10 is a hard material or a flexible material. It will be appreciated that the flexible material is capable of deforming when subjected to a force, whereas the hard material is not deformed when subjected to a force. Specifically, the flexible material includes at least one of Polyimide (PI), polyethylene terephthalate (Polyethylene terephthalate, PET). The hard material comprises at least one of ceramic, glass, and polymer.
As shown in fig. 11, in some embodiments, the temperature and pressure compound sensor 1000 has a first deformation region 31 and a second deformation region 32, the first deformation region 31 being located at a region where the first substrate 10 overlaps the cavity 30; the second deformation region 32 is located at a region where the second substrate 20 overlaps the cavity 30. When the first deformation region 31 is a region where the first substrate 10 and the cavity 30 overlap, and the second deformation region 32 is a region where the second substrate 20 and the cavity 30 overlap, the temperature and pressure combined sensor 1000 can measure the stress from the first substrate 10 and the second substrate 20 in two directions and above. When the deformation area is stressed, the deformation area deforms, so that the deformation of the pressure sensitive resistor 40 is caused, and the resistance value of the pressure sensitive resistor 40 is further caused to change; the change in the resistance value causes a change in the electrical signal, so that the magnitude of the external pressure F can be reflected.
In some embodiments, the materials of the first substrate 10 and the second substrate 20 are flexible materials. It will be appreciated that the flexible material is capable of deforming when subjected to a force. Specifically, the flexible material includes at least one of Polyimide (PI), polyethylene terephthalate (Polyethylene terephthalate, PET).
As shown in fig. 9-10, in some embodiments, when the temperature sensitive resistor 50 is located outside the cavity 30, the pressure sensitive resistor 40 is located on the first substrate 10 or the second substrate 20. It will be appreciated that when the temperature sensitive resistor 50 is located outside the cavity 30, the pressure sensitive resistor 40 is located on the first substrate 10 or the second substrate 20, and the temperature and pressure combined sensor 1000 can measure the force from the direction of the first substrate 10 or the force from the direction of the second substrate 20.
As shown in fig. 11, in some embodiments, when the temperature sensitive resistor 50 is located outside the cavity 30, the pressure sensitive resistor 40 is located on the first substrate 10 and the second substrate 20. It will be appreciated that when the temperature sensitive resistor 50 is located outside the cavity 30, the pressure sensitive resistor 40 is located on the first substrate 10 and the second substrate 20, and the temperature and pressure combined sensor 1000 can measure the force from the direction of the first substrate 10 and the force from the direction of the second substrate 20.
As shown in fig. 13, a circuit structure diagram of the temperature-pressure composite sensor provided in the present application is shown, wherein a power supply 100 provides a constant voltage, a ground terminal 200 is grounded, and initial resistances of a pressure sensitive resistor 40 and a temperature sensitive resistor 50 are the same; the pressure sensitive resistor 40 is sensitive to pressure, the temperature sensitive resistor 50 is sensitive to temperature, when the temperature and the pressure change at the same time, the resistance values of the pressure sensitive resistor 40 and the temperature sensitive resistor 50 change differently, the voltages output by the first output end 300 and the second output end 400 are different, and at this time, the pressure signal can be obtained more accurately through the voltage difference between the first output end 300 and the second output end 400, so that the accuracy of pressure measurement is improved.
In some embodiments, the material of the pressure sensitive resistor 40 includes at least one of constantan and monocrystalline silicon; the material of the temperature sensitive resistor 50 includes at least one of pure copper and monocrystalline silicon.
In some embodiments, the pressure measurement range of the temperature and pressure combined sensor 1000 is 0mpa to 5mpa; the temperature measurement range of the temperature and pressure combined sensor 1000 is 40 ℃ below zero to 125 ℃.
Specifically, the pressure measurement range of the temperature and pressure combined sensor 1000 may be one or two of 0MPa, 1MPa, 2MPa, 3MPa, 4MPa, and 5MPa, and it is worth to be noted that the value of the pressure measurement range is only given by way of example, and all fall within the scope of protection of the present application as long as the value is within the range of 0MPa to 5 MPa.
The temperature measurement range of the temperature and pressure combined sensor 1000 may be one or two of a range of 40 ℃ below zero, 30 ℃ below zero, 20 ℃ below zero, 10 ℃ below zero, 0 ℃, 10 ℃, 20 ℃, 30 ℃, 40 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃ and 125 ℃, and it is worth noting that the value of the temperature measurement range is only given by way of example, and all fall within the scope of protection of the present application as long as the value is within the range of 40 ℃ below zero to 125 ℃.
In some embodiments, pressure sensitive resistor 40 comprises a number of pressure sensitive resistor strips connected in series; the temperature sensitive resistor 50 comprises a plurality of temperature sensitive resistor strips connected in series.
The number of the pressure sensitive resistor bars is 50-1000. Specifically, the number of the pressure sensitive resistor strips may be 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1000 or any combination thereof, and it is worth noting that the value of the number of the first pressure sensitive resistor strips is only given as an example, and is within the scope of protection of the present application within 50 to 1000.
The number of the temperature sensitive resistor strips is 50-1000. Specifically, the number of the temperature-sensitive resistor strips may be 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1000 or a range formed by the two, and it is worth noting that the value of the number of the temperature-sensitive resistor strips is only given as an example, and all fall within the scope of protection of the application within the range of 50 to 1000.
As shown in fig. 14, correspondingly, the present application further provides a method for preparing a temperature and pressure composite sensor, which includes:
step S101: providing a first substrate 10;
step S102: providing a second substrate 20, wherein the second substrate 20 is arranged opposite to the first substrate 10, and a cavity 30 is enclosed by the second substrate 20 and the first substrate 10;
step S103: forming a pressure sensitive resistor 40, the pressure sensitive resistor 40 being located within the cavity 30;
step S104: a temperature sensitive resistor 50 is formed, the temperature sensitive resistor 50 being located outside the cavity 30.
According to the pressure sensitive resistor 40 and the temperature sensitive resistor 50 are integrated in the sensor at the same time, so that simultaneous measurement of pressure and temperature is realized, the second substrate 20 and the first substrate 10 are enclosed with the cavity 30, the pressure sensitive resistor 40 is arranged in the cavity 30, the temperature sensitive resistor 50 is positioned outside the cavity 30, deformation of the cavity 30 cannot influence the temperature sensitive resistor 50, and the accuracy of the temperature sensitive resistor 50 is improved; fatigue of the temperature sensitive resistor 50 material can be effectively reduced, and further the risk of breakage of the temperature sensitive resistor 50 material is reduced, so that the reliability of the sensor is improved; the creep degree of the temperature sensitive resistor 50 material can be effectively reduced, so that the stability of the sensor signal is improved; zero Offset can be reduced, and the consistency of products is improved; the bonding area outside the cavity 30 is effectively utilized, and more resistance strips can be arranged in the sensor under the condition of the same area, so that the area utilization rate is effectively improved; in addition, under the condition that the whole area of the sensor is unchanged, more temperature sensitive resistors 50 and pressure sensitive resistors 40 can be arranged in the sensor, and as the number of the temperature sensitive resistors and the pressure sensitive resistors increases, the current passing through the sensor is reduced under the condition that the applied voltage is the same, so that the power consumption of the sensor can be reduced; furthermore, under the condition that the arranged resistor strips are unchanged, the size of the sensor can be reduced, namely more sensors can be manufactured under the same area, and the sensor is suitable for measuring environments with smaller areas; further, the pressure sensitive resistor 40 and the temperature sensitive resistor 50 are separately placed, so that the circuit is prevented from being staggered, the signal interference between the pressure sensitive resistor 40 and the temperature sensitive resistor 50 is reduced, and the reliability and the stability of the sensor are effectively improved; further, when the temperature sensitive resistor 50 is located outside the cavity 30, it can directly contact with the measured object, so that the temperature can be measured more accurately and rapidly, and the sensitivity of temperature measurement is improved.
In some embodiments, the step of enclosing the cavity 30 with the second substrate 20 and the first substrate 10 includes:
the second substrate 20 and the first substrate 10 are bonded, and the second substrate 20 and the first substrate 10 enclose a cavity 30.
In some embodiments, the bonding temperature is 80 ℃ to 300 ℃; the bonding pressure is 1-20 MPa; the bonding time is 1 h-3 h.
Specifically, the bonding temperature may be one or both of 80 ℃, 100 ℃, 150 ℃, 200 ℃, 250 ℃ and 300 ℃, and it is worth noting that the bonding temperature is only given as an example, and all values falling within the scope of the present application are within the range of-80 ℃ to 300 ℃.
Specifically, the bonding pressure may be one or two of 1MPa, 5MPa, 10MPa, 15MPa, and 20MPa, and it is worth noting that the bonding pressure is only given as an example, and it is within the scope of protection of the present application as long as the bonding pressure is within the range of 1MPa to 20 MPa.
Specifically, the bonding time may be one of 1h, 1.5h, 2h, 2.5h, and 3h or a range formed by the two, and it is worth noting that the value of the bonding time is only given by way of example, and all the bonding time is within the scope of protection of the present application as long as the bonding time is within the range of 1h to 3h.
In some embodiments, the first substrate 10 or the second substrate 20 has a groove 301, and the first substrate 10 and the second substrate 20 enclose a cavity 30.
In some embodiments, the first and second substrates 10 and 20 have grooves 301, and the first and second substrates 10 and 20 enclose cavities 30.
In some embodiments, prior to the step of forming the pressure sensitive resistor 40, further comprising:
support columns 60 are formed, the support columns 60 are located between the first substrate 10 and the second substrate 20, and the support columns 60 enclose the cavities 30 with the first substrate 10 and the second substrate 20.
In some embodiments, support columns 60 cover temperature sensitive resistor 50 when temperature sensitive resistor 50 is located outside of cavity 30.
In some embodiments, when temperature-sensitive resistor 50 is located outside of cavity 30, the step of forming pressure-sensitive resistor 40 includes:
a pressure sensitive resistor 40 is formed on the first substrate 10 and/or the second substrate 20.
As shown in fig. 15-16, in some embodiments, the step of forming the pressure sensitive resistor 40 on the first substrate 10 and/or the second substrate 20 includes:
forming a pressure sensitive film 401 on one side of the first substrate 10 and/or the second substrate 20;
the pressure sensitive film 401 is patterned to form the pressure sensitive resistor 40.
As shown in fig. 17-18, in some embodiments, the step of forming the temperature sensitive resistor 50 on the first substrate 10 or the second substrate 20 includes:
forming a temperature sensitive film 501 on one side of the first substrate 10 or the second substrate 20;
the temperature sensitive film 501 is patterned to form a temperature sensitive resistor 50.
Correspondingly, the application also provides a temperature and pressure combined type sensor packaging structure, which comprises the temperature and pressure combined type sensor 1000; or the temperature and pressure composite sensor 1000 prepared by the method for preparing the temperature and pressure composite sensor as described above.
According to the temperature-pressure composite sensor packaging structure, temperature and pressure can be measured, and when the temperature sensitive resistor is positioned outside the cavity, the accuracy of temperature measurement is improved, the fatigue of the temperature sensitive resistor material can be effectively reduced, the risk of breakage of the temperature sensitive resistor material is further reduced, and therefore the reliability of the sensor is improved; the creep degree of the temperature sensitive resistance material can be effectively reduced, so that the stability of the sensor signal is improved; zero Offset can be reduced, and the consistency of products is improved; the bonding area outside the cavity is effectively utilized, more resistance strips can be arranged in the sensor under the condition that the areas are the same, and the area utilization rate is effectively improved; in addition, under the condition that the whole area of the sensor is unchanged, more temperature sensitive resistors and pressure sensitive resistors can be arranged in the sensor, and as the number of the temperature sensitive resistors and the pressure sensitive resistors is increased, the current passing through the sensor is reduced under the condition that the applied voltage is the same, so that the power consumption of the sensor can be reduced; furthermore, under the condition that the arranged resistor strips are unchanged, the size of the sensor can be reduced, namely more sensors can be manufactured under the same area, and the sensor is suitable for measuring environments with smaller areas; further, the pressure sensitive resistor and the temperature sensitive resistor are separately placed, the circuit is prevented from being staggered, the signal interference between the pressure sensitive resistor and the temperature sensitive resistor is reduced, and the reliability and the stability of the sensor are effectively improved; further, when the temperature sensitive resistor is positioned outside the cavity, the temperature sensitive resistor can be directly contacted with a measurement object, so that the temperature can be measured more accurately and rapidly, and the sensitivity of temperature measurement is improved; meanwhile, the pressure from different directions can be measured, and the interference of temperature on the pressure measurement result can be avoided, so that the accuracy of pressure measurement is improved.
In summary, although the detailed description of the embodiments of the present application is given above, the above embodiments are not intended to limit the present application, and those skilled in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (17)
1. A temperature and pressure compound sensor, comprising:
a first substrate (10);
a second substrate (20), wherein the second substrate (20) is arranged opposite to the first substrate (10), and a cavity (30) is enclosed by the second substrate (20) and the first substrate (10);
-a pressure sensitive resistor (40), the pressure sensitive resistor (40) being located within the cavity (30);
a temperature sensitive resistor (50), the temperature sensitive resistor (50) being located outside the cavity (30); the temperature and pressure combined sensor is provided with at least one deformation area, and the deformation area is positioned in the area where the first substrate (10) and/or the second substrate (20) are overlapped with the cavity (30).
2. The temperature and pressure combination sensor according to claim 1, characterized in that the first substrate (10) and/or the second substrate (20) have/have a recess (301), the first substrate (10) and the second substrate (20) enclosing a cavity (30).
3. The temperature and pressure combined sensor according to claim 1 or 2, characterized in that the temperature and pressure combined sensor (1000) further comprises a support column (60), the support column (60) is located between the first substrate (10) and the second substrate (20), and the support column (60) encloses a cavity (30) with the first substrate (10) and the second substrate (20).
4. A temperature and pressure combination sensor according to claim 3, characterized in that the support post (60) covers the temperature sensitive resistor (50) when the temperature sensitive resistor (50) is located outside the cavity (30).
5. A temperature and pressure compound sensor according to claim 3, characterized in that the temperature and pressure compound sensor (1000) has a first deformation zone (31), the first deformation zone (31) being located in the area where the first substrate (10) overlaps the cavity (30) or in the area where the second substrate (20) overlaps the cavity (30).
6. The temperature and pressure combined sensor according to claim 5, characterized in that when the first deformation region (31) is located in a region where the first substrate (10) and the cavity (30) overlap, the material of the first substrate (10) is a flexible material, and the material of the second substrate (20) is a hard material or a flexible material;
when the first deformation area (31) is located in the area where the second substrate (20) and the cavity (30) overlap, the second substrate (20) is made of a flexible material, and the first substrate (10) is made of a hard material or a flexible material.
7. A temperature and pressure compound sensor according to claim 3, characterized in that the temperature and pressure compound sensor (1000) has a first deformation zone (31) and a second deformation zone (32), the first deformation zone (31) being located in the area where the first substrate (10) overlaps the cavity (30); the second deformation region (32) is located in a region where the second substrate (20) overlaps the cavity (30).
8. The temperature and pressure combination sensor according to claim 7, wherein the material of the first substrate (10) and the second substrate (20) is a flexible material.
9. Temperature and pressure combination sensor according to claim 1, characterized in that the pressure sensitive resistor (40) is located on the first substrate (10) and/or the second substrate (20) when the temperature sensitive resistor (50) is located outside the cavity (30).
10. The temperature and pressure composite sensor according to claim 1, wherein the material of the temperature sensitive resistor (50) comprises at least one of pure copper and monocrystalline silicon; the material of the pressure sensitive resistor (40) comprises at least one of constantan and monocrystalline silicon.
11. The temperature and pressure combined sensor according to claim 1, characterized in that the pressure measuring range of the temperature and pressure combined sensor (1000) is 0mpa to 5mpa; the temperature measurement range of the temperature-pressure composite sensor (1000) is 40-125 ℃ below zero.
12. The preparation method of the warm-pressing composite sensor is characterized by comprising the following steps of:
providing a first substrate (10);
providing a second substrate (20), wherein the second substrate (20) is arranged opposite to the first substrate (10), and a cavity (30) is enclosed by the second substrate (20) and the first substrate (10);
-forming a pressure sensitive resistor (40), the pressure sensitive resistor (40) being located within the cavity (30);
forming a temperature sensitive resistor (50), the temperature sensitive resistor (50) being located outside the cavity (30);
at least one deformation region is formed, which is located in the region of the first substrate (10) and/or the second substrate (20) overlapping the cavity (30).
13. The method for manufacturing a temperature and pressure combined sensor according to claim 12, characterized in that the first substrate (10) and/or the second substrate (20) are provided with grooves (301), and the first substrate (10) and the second substrate (20) enclose a cavity (30).
14. The method of manufacturing a temperature and pressure composite sensor according to claim 12 or 13, further comprising, prior to the step of forming the pressure sensitive resistor (40):
a support column (60) is formed, the support column (60) is located between the first substrate (10) and the second substrate (20), and a cavity (30) is enclosed by the support column (60) and the first substrate (10) and the second substrate (20).
15. The method of manufacturing a temperature and pressure combination sensor of claim 14, wherein the support post (60) covers the temperature sensitive resistor (50) when the temperature sensitive resistor (50) is located outside the cavity (30).
16. The method of manufacturing a temperature and pressure composite sensor according to claim 12, wherein the step of forming a pressure sensitive resistor (40) when the temperature sensitive resistor (50) is located outside the cavity (30) comprises:
a pressure-sensitive resistor (40) is formed on the first substrate (10) and/or the second substrate (20).
17. A temperature and pressure compound sensor package structure, characterized in that it comprises a temperature and pressure compound sensor (1000) according to any one of claims 1-11; or a temperature and pressure composite sensor (1000) prepared by adopting the preparation method of the temperature and pressure composite sensor as claimed in any one of claims 12 to 16.
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| CN116429279A (en) * | 2023-04-19 | 2023-07-14 | 西安交通大学 | A high-precision temperature and pressure composite measurement sensor in a hydraulic system |
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| JPH1172402A (en) * | 1997-08-29 | 1999-03-16 | Mitsubishi Electric Corp | Pressure sensor device |
| CN210893223U (en) * | 2019-09-12 | 2020-06-30 | 南京高华科技股份有限公司 | Temperature and pressure sensor |
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| CN117168546A (en) | 2023-12-05 |
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