CN117144366A - Copper etching solution and preparation method thereof - Google Patents
Copper etching solution and preparation method thereof Download PDFInfo
- Publication number
- CN117144366A CN117144366A CN202311416184.5A CN202311416184A CN117144366A CN 117144366 A CN117144366 A CN 117144366A CN 202311416184 A CN202311416184 A CN 202311416184A CN 117144366 A CN117144366 A CN 117144366A
- Authority
- CN
- China
- Prior art keywords
- copper
- etching solution
- etching
- compound
- arsenic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 59
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 17
- 239000010949 copper Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000001495 arsenic compounds Chemical class 0.000 claims abstract description 10
- 239000005749 Copper compound Substances 0.000 claims abstract description 7
- 150000001880 copper compounds Chemical class 0.000 claims abstract description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 229910052789 astatine Inorganic materials 0.000 claims description 5
- RYXHOMYVWAEKHL-UHFFFAOYSA-N astatine atom Chemical group [At] RYXHOMYVWAEKHL-UHFFFAOYSA-N 0.000 claims description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 4
- 239000011630 iodine Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims 1
- 238000003756 stirring Methods 0.000 claims 1
- -1 iodide ions Chemical class 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000000654 additive Substances 0.000 description 4
- 239000002738 chelating agent Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 229940006461 iodide ion Drugs 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention provides a copper etching solution and a preparation method thereof, wherein the copper etching solution mainly comprises the following three components of 0.1-30wt% of copper compound, 0.01-30wt% of arsenic compound and the balance of copper-containing layer containing water. The optional components also comprise 0.1-30wt% of iodide ions, so as to improve the etching speed, the pH value of the etching solution can be adjusted by adding a pH regulator, the etching solution can realize a copper etching process with high efficiency and higher resolution, and can be widely applied to the formation of high-resolution circuit patterns of printed circuit boards, semiconductor packaging substrates and the like.
Description
Technical Field
The invention relates to the field of chemical etching, in particular to copper etching solution and a preparation method thereof.
Background
The methods of forming circuits of printed circuit boards, semiconductor package substrates, and the like in the prior art include: an additive method of adding a circuit pattern to a substrate and an etching method of removing unnecessary portions from a metal foil on the substrate to form the circuit pattern. At present, the etching method has been widely used for manufacturing printed circuit boards due to low production cost. With the recent convenience and high performance of electronic devices, how to realize high resolution etching has become a problem to be solved.
Disclosure of Invention
The prior art has the following problems: a sufficient etching rate cannot be obtained, and it is difficult to form a pattern having a desired size satisfying resolution requirements.
Accordingly, an object of the present invention is to provide an etching solution for copper-containing layers capable of efficiently forming etching patterns having excellent size and high resolution. The present invention also aims to provide an etching method using the etching solution.
As a result of the studies conducted by the present inventors, it was found that an etching solution containing a specific component can solve the above-mentioned problems, and the present invention has been achieved.
Specifically, according to the present invention, there is provided a liquid crystal display device comprising: (i) 0.1 to 30% by weight of a copper compound, (ii) the chemical formula (1)0.01 to 30wt% of an arsenic compound, and water, wherein in the above chemical expression (1), P1 to P4 each independently represent a hydroxyl group, a hydrocarbon group or a carboxyl group, and Y represents iodine or an astatine atom, and N represents a nitrogen element.
The specific preparation method of the product is not different from the common means in the field, pure water, copper compound and arsenic compound can be added in sequence in the purification space, and the mixture is stirred uniformly, filtered and packaged to prepare the finished product.
In addition, according to the present invention, there is also provided a method for etching a copper-containing layer using the etching liquid for a copper-containing layer.
Drawings
FIG. 1 is a general formula of an arsenic compound in the present invention.
Detailed Description
The term "etching" as used herein means a technique of forming or surface treatment by etching with chemicals or the like.
(i) The component is a copper compound. (i) The concentration of the component may be appropriately adjusted within the above concentration range, but in the range of 0.1 to 10wt%, the etching rate is more easily controlled, and thus is particularly preferable. When the concentration of the (i) component is less than 0.1wt%, a sufficient etching rate may not be obtained. On the other hand, when the concentration of the (i) component exceeds 30wt%, it may be difficult to control the etching rate.
As shown in fig. 1, the component (ii) is an arsenic compound represented by chemical expression (1). One of the (ii) components may be used alone or two or more may be used in combination.
In the chemical expression (1), P1 to P4 each independently represent a hydroxyl group, a hydrocarbon group, or a carboxyl group. The carboxyl group may be methyl, ethyl, n-propyl, isopropyl, or the like. In order to more easily form a high-resolution etching pattern having an excellent size, it is preferable that P2 to P4 each independently represent a carboxyl group. In some embodiments of the present etchant, it is more desirable that each of P1 to P4 independently represents a carboxyl group. In addition, in some embodiments of the present etching solutions, it is particularly desirable that P1 represents a hydroxyl group or a hydrocarbon group, and P2 to P4 each independently represent a carboxyl group.
In the chemical expression (1), Y represents iodine or astatine atom in order to more easily form a better pattern.
The concentration of the component (ii) in the etching solution is in the range of 0.01 to 30wt%, more preferably in the range of 0.04 to 8wt%, and particularly preferably in the range of 0.1 to 6wt%, based on the total mass of the etching solution. When the concentration of the component (ii) is less than 0.01wt%, the desired effect of adding the component (ii) may not be obtained. On the other hand, when the concentration of the (ii) component exceeds 30wt%, the final shape may be easily problematic.
In the present etching solution, the mass ratio of the component (ii) to the component (i) is preferably from 0.01 to 1, more preferably from 0.03 to 0.5, and particularly preferably from 0.05 to 0.3. When the value of (ii)/(i) is less than or equal to 1, a pattern with better resolution is more easily formed. On the other hand, when the value of (ii)/(i) is greater than or equal to 0.01, patterning is easier and faster but the resolution thereof is lower.
The etching solution is a solution containing water in which all components are dissolved in water. As water, ultra-pure purified water from which impurities have been removed may be used. The water content in the etching solution is about 50-99wt% based on the total mass of the etching solution.
The present etching solution preferably contains iodide ions because of an increase in etching rate. In order to contain iodide ions in the etching solution, a supply source of iodide ions may be used.
The iodide ion concentration in the etching solution is preferably in the range of 0.1 to 30wt%, more preferably 1 to 28wt%, and particularly preferably 5 to 21wt% based on the total mass of the etching solution with respect to the etching solution. The concentration of iodide ions can be appropriately adjusted according to the etched size or the like. When the concentration of iodide ions is greater than or equal to 0.1wt%, the corrosion rate may increase. On the other hand, when the concentration of iodide ions is 30wt% or less, problems such as corrosion of equipment parts are not likely to occur.
The etching solution may contain not only the component (i) and the component (ii), but also water and iodide ions, and may contain other additives as long as the effects of the present invention are not impaired. Examples of the additives include an etching solution stabilizer, solubilizers of various components, a pH adjuster, a specific gravity adjuster, a viscosity adjuster, a wettability improver, a chelating agent, an oxidizing agent, a reducing agent, a surfactant, and an anticorrosive agent. The concentration of these additives is generally in the range of 0.001 to 50 wt%.
As the pH adjuster, for example, an inorganic acid such as sulfuric acid, nitric acid, and salts thereof; a water-soluble organic acid and salts thereof.
As the chelating agent, the chelating agent concentration in the etching solution is usually in the range of 0.01 to 40wt%, and desirably in the range of 0.05 to 30wt%.
The etching solution may contain the following components:
1. surfactants, the typical concentration range of surfactants is 0.001 to 10wt%.
2. Rust inhibitors, the concentration of which in the etching solution is generally in the range of 0.001 to 10wt%.
3. Solvent: alcohol solvents, ketone solvents, ether solvents, and the like can be used.
An etching method according to an embodiment of the present invention includes etching a copper-containing layer using the etching solution described above. In addition to the above etching solution, a known etching method may be used.
The etching conditions are not particularly limited and may be set according to the shape, size, and the like of the object to be etched. For example, the etching temperature is preferably in the range of 10 to 50℃using a pressure of 0.01 to 0.2 MPa. Since the temperature of the etching liquid may rise due to the heat of reaction, it may be temperature-controlled using a known method to ensure that it is maintained within the above-described temperature range, if necessary.
By etching using the etching liquid, a highly accurate etching pattern can be formed efficiently and accurately.
Claims (6)
1. The copper etching solution is characterized by comprising the following components in percentage by mass: 0.1-30wt% of copper compound;
0.01-30wt% of arsenic compound; the balance being water; the chemical expression of the arsenic compound is as follows:wherein P1-P4 each independently represent a hydroxyl group, a hydrocarbon group, or a carboxyl group, and Y represents iodine or an astatine atom.
2. A copper etchant as in claim 1 wherein said iodine or astatine atomic concentration is 0.1-30wt%.
3. A copper etching solution according to claim 1, wherein the concentration ratio of the copper compound to the arsenic compound is 0.01 to 1.
4. A copper etching solution according to claim 1, wherein P1 is a hydroxyl group or a hydrocarbon group, P2 to P4 are each independently a carboxyl group, and Y is an iodine atom or an astatine atom.
5. The copper etchant of claim 1, wherein the arsenic compound component comprises at least one of: n-alkyl trimethyl arsinide, N-alkyl triethyl arsinide, and trimethyl hydroxy arsinide.
6. A method for preparing the copper etching solution according to any one of claims 1 to 5, comprising the steps of: and sequentially adding pure water, copper compound and arsenic compound into the purifying space, stirring uniformly, filtering, and subpackaging to obtain the finished product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311416184.5A CN117144366A (en) | 2023-10-30 | 2023-10-30 | Copper etching solution and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311416184.5A CN117144366A (en) | 2023-10-30 | 2023-10-30 | Copper etching solution and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117144366A true CN117144366A (en) | 2023-12-01 |
Family
ID=88906486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311416184.5A Pending CN117144366A (en) | 2023-10-30 | 2023-10-30 | Copper etching solution and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117144366A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102834547A (en) * | 2010-01-28 | 2012-12-19 | 三菱瓦斯化学株式会社 | Etching liquid for a copper/titanium multilayer thin film |
| CN103649373A (en) * | 2011-07-04 | 2014-03-19 | 三菱瓦斯化学株式会社 | Etching liquid for copper or compound having copper as primary component |
| TW201538687A (en) * | 2014-03-28 | 2015-10-16 | Mec Co Ltd | Method of forming wire and etching fluid |
| CN105143515A (en) * | 2013-04-16 | 2015-12-09 | Mec股份有限公司 | Etching solution, replenishment solution, and method for forming wiring |
| CN106795633A (en) * | 2014-10-10 | 2017-05-31 | 三永纯化株式会社 | The manufacture method of etchant, the engraving method of multilayer film and display device |
-
2023
- 2023-10-30 CN CN202311416184.5A patent/CN117144366A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102834547A (en) * | 2010-01-28 | 2012-12-19 | 三菱瓦斯化学株式会社 | Etching liquid for a copper/titanium multilayer thin film |
| CN103649373A (en) * | 2011-07-04 | 2014-03-19 | 三菱瓦斯化学株式会社 | Etching liquid for copper or compound having copper as primary component |
| CN105143515A (en) * | 2013-04-16 | 2015-12-09 | Mec股份有限公司 | Etching solution, replenishment solution, and method for forming wiring |
| TW201538687A (en) * | 2014-03-28 | 2015-10-16 | Mec Co Ltd | Method of forming wire and etching fluid |
| CN106795633A (en) * | 2014-10-10 | 2017-05-31 | 三永纯化株式会社 | The manufacture method of etchant, the engraving method of multilayer film and display device |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20231201 |