CN117111402A - Mask defect repairing method and mask structure - Google Patents
Mask defect repairing method and mask structure Download PDFInfo
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- 230000007547 defect Effects 0.000 title claims abstract description 188
- 238000000034 method Methods 0.000 title claims abstract description 104
- 230000008439 repair process Effects 0.000 claims abstract description 170
- 238000005530 etching Methods 0.000 claims abstract description 54
- 238000011161 development Methods 0.000 claims abstract description 14
- 238000004458 analytical method Methods 0.000 claims abstract description 13
- 238000001459 lithography Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 44
- 239000007789 gas Substances 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 25
- 238000010884 ion-beam technique Methods 0.000 claims description 25
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 14
- 230000001133 acceleration Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 6
- 238000007737 ion beam deposition Methods 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 5
- 229940076136 ferrous iodide Drugs 0.000 claims description 3
- BQZGVMWPHXIKEQ-UHFFFAOYSA-L iron(ii) iodide Chemical compound [Fe+2].[I-].[I-] BQZGVMWPHXIKEQ-UHFFFAOYSA-L 0.000 claims description 3
- 150000005002 naphthylamines Chemical class 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The application provides a mask defect repair method and a mask structure, wherein the mask defect repair method is used for reducing deviation of mask defect repair boundaries and comprises the following steps: providing a mask plate with a convex defect at the edge of the pattern; determining a defect repair area of the mask, wherein the defect repair area extends from a part of the surface of the protruding defect into the mask, and the short side dimension of the defect repair area extending into the mask is not greater than the minimum development analysis dimension in lithography; and etching the convex defects and the mask plate of the defect repair area, wherein the short side size of the residual convex defects is not larger than the minimum development analysis size. The technical scheme of the application can reduce the deviation of the mask defect repair boundary.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a mask defect repairing method and a mask structure.
Background
Defects can be generated in the mask pattern manufacturing process, repair is needed, the defects are mainly light-shielding type defects and light-transmitting type defects of pattern edges, and the repair process corresponds to etching and deposition processes respectively. The type of equipment with higher repair accuracy is repair using a focused electron beam and a focused ion beam to assist the etching or deposition gas.
But the focused electron beam and the focused ion beam have certain size and size fluctuation, the controlled focusing position also has certain deviation, and meanwhile, electrons and ions have scattering effect when bombarding the pattern surface of the mask plate and react with auxiliary gas during etching or deposition. The focused electron beam or ion beam is obviously scattered, so that the repaired selected area is smaller than the actual defect, the size and the shape of the repaired area need to be edited by manual control, but the deviation of the boundary of the repaired area is larger in the current repairing method.
Disclosure of Invention
The application aims to solve the technical problem of reducing the deviation of the repair boundary of the mask defect.
In order to solve the above technical problems, the present application provides a method for repairing a mask defect, which is used for reducing deviation of a mask defect repairing boundary, and includes: providing a mask plate with a convex defect at the edge of the pattern; determining a defect repair area of the mask, wherein the defect repair area extends from a part of the surface of the protruding defect into the mask, and the short side dimension of the defect repair area extending into the mask is not greater than the minimum development analysis dimension in lithography; and etching the convex defects and the mask plate of the defect repair area, wherein the short side size of the residual convex defects is not larger than the minimum development analysis size.
In some embodiments of the present application, the size of the long side of the defect repair area extending into the reticle is 1-5 times the size of the short side of the defect repair area extending into the reticle, and no more than 70% of the size of the reticle. In some embodiments of the present application, the etching is performed using an electron beam etching process in which an electron beam acceleration voltage is 0.2 KV-3 KV, an electron beam current is 10 pA-200 pA, and an etching auxiliary gas includes XeF 2 Or the etching auxiliary gas comprises XeF 2 And a mixed gas of at least one of the following gases: h 2 O、N 2 O、Cl 2 And O 2 。
In some embodiments of the application, the etching is performed using an ion beam etching process, and in the ion beam etching process, ion beam is appliedThe speed voltage is 2 KV-50 KV, and the ion beam current is 0.5 pA-25 pA; the etching ion source is Ga or Ga compound, and the etching auxiliary gas comprises XeF 2 Or the etching auxiliary gas comprises XeF 2 A mixed gas with at least one of the following gases: h 2 O、N 2 O、Cl 2 And O 2 Or the etching auxiliary gas comprises ferrous iodide.
In some embodiments of the application, the defect repair area is a polygon or an irregular boundary pattern.
The application also provides a mask structure comprising: a mask plate substrate; and the mask plate is positioned above the mask plate substrate and is formed by adopting the mask plate defect repairing method.
The application also provides a mask defect repair method for reducing deviation of mask defect repair boundary, comprising the following steps: providing a mask plate comprising a defect pattern, wherein the defect pattern is missing compared with a normal pattern; determining a defect repair area of the mask, wherein the defect repair area covers the vertex angle or the boundary of the defect graph and extends outwards of the defect graph, and the short side dimension of the defect repair area extending out of the mask is not larger than the minimum development analysis dimension in photoetching; and performing deposition repair in the defect repair area.
In some embodiments of the present application, the size of the long side of the defect repair area extending out of the mask plate is 1-5 times the size of the short side of the defect repair area extending out of the mask plate, and is not more than 70% of the size of the mask plate.
In some embodiments of the present application, the deposition repair process is an electron beam deposition process, and in the electron beam deposition process, an electron beam acceleration voltage is 0.2 KV-3 KV, and an electron beam current is 10 pA-200 pA; the deposition assist gas comprises TEOS, O 2 、Cr(CO) 6 And Mo (CO) 6 At least one of them.
In some embodiments of the application, the process of deposition repair is an ion beam deposition process, and in the ion beam deposition process, an ion beam acceleration voltage2 KV-50 KV and ion beam current 0.5 pA-25 pA; the deposition ion source is Ga or Ga compound, and the deposition auxiliary gas comprises TEOS, O 2 、Cr(CO) 6 、Mo(CO) 6 And at least one of naphthylamines.
In some embodiments of the application, the defect repair area is a polygon or an irregular boundary pattern.
The application also provides a mask structure comprising: a mask plate substrate; and the mask plate is positioned above the mask plate substrate and is formed by adopting the mask plate defect repairing method.
Compared with the prior art, the technical scheme of the application has the following beneficial effects: the defining mode of the defect repairing area is changed, so that the defect repairing area extends from part of the surface of the protruding defect to the mask, the size of the whole repairing area is obviously larger than that of the original method, the editable size of the repairing area is also obviously larger, and the final imaging shape and size of the graph are close to the expected shape and size under the optical proximity effect (OPC) after repairing, so that the fluctuation sensitivity of the whole process in the repairing process is reduced, the final repairing result cannot be greatly fluctuated along with the tiny change of the boundary of the repairing area, and the deviation of the defect repairing boundary of the mask is reduced.
Drawings
The following drawings describe in detail exemplary embodiments disclosed in the present application. Wherein like reference numerals refer to like structure throughout the several views of the drawings. Those of ordinary skill in the art will understand that these embodiments are non-limiting, exemplary embodiments, and that the drawings are for illustration and description only and are not intended to limit the scope of the application, as other embodiments may equally well accomplish the inventive intent in this disclosure. It should be understood that the drawings are not to scale. Wherein:
FIG. 1 is a top view of a shading defect;
FIG. 2 is a cross-sectional view of the light-shielding type defect of FIG. 1 being etched and repaired;
FIG. 3 is a schematic flow chart of a mask defect repairing method according to an embodiment of the application;
FIG. 4 is a schematic diagram of a mask with etching defects;
FIG. 5 is a diagram of an etching defect repair area obtained by the current repair area definition;
FIG. 6 is an etching defect repair area obtained by defining a repair area according to an embodiment of the present application;
FIG. 7 is a graph comparing repair results obtained by an OPC simulation system simulating two repair methods;
FIG. 8 is a graph showing a comparison of images of a reticle after actual repair using two methods;
FIG. 9 is a graph comparing AIMS measurements of actual repair results using two methods;
FIG. 10 is a flowchart illustrating another mask defect repair method according to an embodiment of the present application;
FIG. 11 is a schematic diagram of a reticle with deposition defects;
FIG. 12 is a diagram of a deposition defect repair area obtained by the current repair area definition;
FIG. 13 is a deposition defect repair area obtained by the repair area definition method according to an embodiment of the present application;
FIG. 14 is a graph comparing repair results obtained by an OPC simulation system simulating two repair methods;
FIG. 15 is a graph showing a comparison of images of a reticle after actual repair using two methods;
FIG. 16 is a graph comparing AIMS measurements with actual repair results using two methods.
Detailed Description
The following description provides specific applications and requirements of the application to enable any person skilled in the art to make and use the application. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the application. Thus, the present application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.
Fig. 1 is a plan view of a light-shielding defect, and fig. 2 is a cross-sectional view of the light-shielding defect shown in fig. 1 being etched and repaired. When forming the mask pattern layer 2 on the mask substrate 1, a protruding defect 3 (shading defect) is formed, and when repairing by etching, the actual repairing area 6 is smaller than the actual protruding defect 3 because the focused electrons or focused ions 4 have obvious scattering 5. The current technology is to make manual control for the repaired area to make shrinkage compensation, but when the line width is smaller and the pattern is dense, if the defect is smaller, the area needing the repairing technology is smaller, the fluctuation of the repairing result along with the repairing boundary control is very large, and the target specification is difficult to enter.
In view of this, the technical scheme of the application provides a method capable of reducing the deviation of the repair boundary of the mask defect, which defines a boundary graph when editing a smaller repair area of the mask, the size of the whole repair area is obviously larger than that of the prior art, the editable size of the repair area is obviously larger, and the final imaging shape and size of the graph are close to the expected shape and size under the action of the optical approach effect after repair, so that the fluctuation sensitivity of the whole process to the repair process is reduced, and the final repair result cannot be greatly fluctuated along with the tiny change of the boundary of the repair area.
Referring to fig. 3, a first aspect of the embodiment of the present application provides a mask defect repair method for reducing deviation of a light-shielding type protruding defect repair boundary of a mask. The repairing method comprises the following steps:
step S1: providing a mask plate with a convex defect at the edge of the pattern;
step S2: determining a defect repair area of the mask, wherein the defect repair area extends from a part of the surface of the protruding defect into the mask, and the short side dimension of the defect repair area extending into the mask is not greater than the minimum development analysis dimension in lithography;
step S3: and etching the convex defects and the mask plate of the defect repair area, wherein the short side size of the residual convex defects is not larger than the minimum development analysis size.
Referring to fig. 3 and 4, a reticle 10 to be repaired is provided, and a pattern edge of the reticle 10 has a protruding defect 20. Then, a defect repair area of the reticle 10 is determined.
Fig. 5 is a defect repair area a obtained in accordance with the current repair area definition. Since the electron beam or the ion beam is scattered during etching, the defect repair area a is defined to extend from the surface of the protruding defect 20 to the inner extension thickness of the protruding defect 20. However, the dimension L1 of the defect repair area a which is defined in the current manner and can be edited during etching is very small, and may approach the equipment control limit, even be smaller than the scattering range of the electron beam or the ion beam, resulting in a large fluctuation of the final repair result.
Referring to fig. 6, the embodiment of the present application breaks the current thinking formula and changes the defining manner of the defect repair area. The defect repair area b of the embodiment of the present application extends from a part of the surface of the protruding defect 20 into the mask 10. The extending direction of the defect repair area b is changed, so that the editable size during etching is increased from the original L1 to L2, the actual repair area is obviously enlarged compared with the current mode, the fluctuation of the final repair result is small, and the large probability of entering the target specification is high. In the prior art, the defining manner of the defect repair area b according to the embodiment of the present application is not considered, because extending the defect repair area into the mask 10 obviously causes damage to the original pattern of the mask 10. However, it is found through subsequent simulation repair and actual measurement that the defect repair area b of the embodiment of the present application is used to repair the mask 10, and the pattern imaging effect generated on the wafer lithography after actual exposure is the same, and at the same time, errors can be reduced.
After the defining mode of the defect repair area is changed, the size of the defect repair area b is matched according to the used chip technology node and related technological parameters. In the embodiment of the present application, the short side dimension of the defect repair area b extending into the pattern of the mask 10 should be not greater than the minimum resolution dimension in photolithography, while a certain process safety margin is also left.
The minimum development analysis size of the mask pattern in the wafer lithography meets the following relation:
R＝4*K 1 *λ/NA；
wherein R is the minimum development analysis size; 4 represents that the size of the mask pattern is 4 times of the size of the wafer pattern, and the numerical value can be changed according to actual conditions; k (K) 1 Is a process factor; lambda is the exposure light source wavelength; NA optical lens numerical aperture. In the current mainstream chip process node of 7nm to 180nm, K 1 The value is generally 0.25-0.8, lambda is generally 193nm, 248nm and 365nm, and NA is generally 0.3-1.4.
In the embodiment of the present application, the size of the long side of the defect repair area b extending into the mask 10 is 1 to 5 times the size of the short side of the defect repair area b extending into the mask 10, and preferably is not more than 70% of the size of the mask 10 (for the line-type mask of the present application, the size of the mask 10 refers to the width). After the defect repair area b is removed, the short side size of the protruding defect 20 remaining at both sides of the defect repair area b is not greater than the minimum resolution size.
As an example, in the main stream 7nm to 180nm process nodes, the short side dimension extending into the mask plate should be lower than 70nm to 1900nm according to the different process parameters used and comprehensively considering the safety margin of the process.
The defect repair area b is a polygon or an irregular boundary pattern. As an example, the defect repair area b of the embodiment of the present application is rectangular.
After the defect repair area b is determined, the convex defect 20 and the mask 10 in the defect repair area b are removed by etching, and the defect repair of the mask 10 is completed. The process parameters during etching are also important for repair. In some embodiments, the etching is performed using an electron beam etching process, and the process parameters of the electron beam etching process include: the accelerating voltage of the electron beam is 0.2 KV-3 KV, the current of the electron beam is 10 pA-200 pA, and the etching auxiliary gas comprises XeF 2 Or the etching auxiliary gas comprises XeF 2 And a mixed gas of at least one of the following gases:H 2 O、N 2 O、Cl 2 and O 2 . In some embodiments, the etching is performed using an ion beam etching process, and the process parameters of the ion beam etching process include: the acceleration voltage of the ion beam is 2 KV-50 KV, and the current of the ion beam is 0.5 pA-25 pA; the etching ion source is Ga or Ga compound, and the etching auxiliary gas comprises XeF 2 Or the etching auxiliary gas comprises XeF 2 A mixed gas with at least one of the following gases: h 2 O、N 2 O、Cl 2 And O 2 Or the etching auxiliary gas comprises ferrous iodide.
After the repair is completed, the repaired mask is measured by using a simulation system, and the repair result is confirmed.
The current repair method and the repair method of the embodiment of the present application are simulated by using an OPC simulation system and the repair result is obtained, as shown in fig. 7. Wherein the graph a is a repairing result obtained by adopting the current repairing method, and the line width dimension error of the line graph is 6%. And b, the graph shows the repairing result of the repairing method, wherein the line width dimension error of the line pattern is reduced from 6% to 2%, and the error is obviously reduced.
FIG. 8 is a comparison of the images of the mask plate after actual repair, wherein the image a is the image after repair by the current repair method, and the size of the repair area is very small, so that the accuracy of the boundary after repair is difficult to control, and therefore, the etching repair area is smaller, and the defect residues are more; b, the image after the repairing method in the embodiment of the application is repaired, the etched area is indeed extended into the mask, and although the original defect still remains, the final imaging result is very small.
Fig. 9 is a comparison of actual repair results measured by AIMS (space image measurement system), wherein a is a repair result obtained by the current repair method, and the line width dimension error of the line pattern is 7%. And b, the graph shows the repairing result of the repairing method, wherein the line width dimension error of the line pattern is reduced from 7% to 2%, and the error is obviously reduced.
Therefore, although the repairing method of the embodiment of the application can extend the repairing area into the mask pattern, the effect generated on the photoresist after actual exposure is the same, and the repairing error can be reduced.
A second aspect of the embodiment of the application provides a mask structure, which comprises a mask substrate and a mask positioned above the mask substrate and formed by adopting the mask defect repairing method.
Referring to fig. 10, a third aspect of the embodiment of the present application provides another mask defect repair method for reducing the deviation of the repair boundary of the light-transmitting defect pattern of the mask. The repairing method comprises the following steps:
step S10: providing a mask plate comprising a defect pattern, wherein the defect pattern is missing compared with a normal pattern;
step S20: determining a defect repair area of the mask, wherein the defect repair area covers the vertex angle and part of the boundary of the defect graph and extends outwards of the defect graph, and the short side dimension of the defect repair area extending out of the defect graph is not larger than the minimum development analysis dimension in photoetching;
step S30: and performing deposition repair in the defect repair area.
Referring to fig. 10 and 11, a mask to be repaired is provided, and the mask to be repaired includes a defect pattern 200, and the defect pattern 200 has a partial pattern missing compared to a normal pattern 210. And then determining the defect repair area of the mask.
Fig. 12 is a defect repair area c obtained in accordance with the current repair area definition. Because the electron beam or ion beam scatters during etching, the sum of the areas of the defect repair area c and the defect pattern 200 is still defined to be smaller than the area of the standard pattern 210. However, the dimension L3 of the defect repair area c which is defined in the current manner and which can be edited at the time of deposition is very small, and may approach the equipment control limit, even corresponding to the scattering range of the electron beam or ion beam, resulting in a large fluctuation of the final repair result.
Referring to fig. 13, the present embodiment changes the current definition of the defect repair area, and defines the defect repair area d. The defect repair area d covers the vertex angle and part of the boundary of the defect pattern 200 and extends to the outside of the defect pattern 200, so that the editable size during deposition is increased from the original L3 to L4, the actual repair area is obviously enlarged compared with the current mode, and the mask plate has obvious optical approach effect in photoetching use, so that a smooth outline pattern close to normal design is formed after final photoetching, the repair result fluctuation is small, and the probability of entering the target specification is high.
After the defining mode of the defect repair area is changed, the size of the defect repair area d is matched according to the used chip technology node and related technological parameters. The short side dimension of the defect repair area d extending out of the defect pattern 200 in the embodiment of the application is not greater than the minimum development resolution dimension in photolithography, and a certain process safety margin is reserved. The formulas and the values of the parameters satisfied by the minimum display resolution size can be referred to the foregoing, and are not repeated herein.
In the embodiment of the present application, the long side dimension of the defect repair area d extending out of the defect pattern 200 is 1 to 5 times the short side dimension of the defect repair area d extending out of the defect pattern 200, and is not more than 70% of the dimension of the defect pattern 200.
As an example, in the main stream of 7nm to 180nm process nodes, the short side dimension extending out of the defect pattern 200 should be lower than 70nm to 1900nm according to the process parameters used and comprehensively considering the safety margin of the process.
The defect repair area d is a polygon or an irregular boundary pattern. As an example, the defect repair area d of the embodiment of the present application is square.
After the defect repair area d is determined, carrying out a deposition process on the defect repair area d to finish defect repair of the mask. The process parameters during deposition are also important for the healing effect. In some embodiments, the deposition is performed using an electron beam deposition process, and the process parameters of the electron beam deposition process include: the accelerating voltage of the electron beam is 0.2 KV-3 KV, and the current of the electron beam is 10 pA-200 pA; the deposition assist gas comprises TEOS, O 2 、Cr(CO) 6 And Mo (CO) 6 At least one of them. In some embodiments, etching is performed using an ion beam deposition process, and process parameters of the ion beam deposition process include: the acceleration voltage of the ion beam is 2 KV-50 KV, and the current of the ion beam is 0.5 pA-25 pA; the deposition ion source is Ga or Ga compound, and the deposition auxiliary gas comprises TEOS, O 2 、Cr(CO) 6 、Mo(CO) 6 And at least one of naphthylamines.
The current repair method and the repair method of the embodiment of the present application are simulated by using an OPC simulation system and the repair result is obtained, as shown in fig. 14. The graph a shows a repairing result obtained by adopting the current repairing method, and the line width dimension error of the line graph is 5%. And b, the graph shows the repairing result of the repairing method, wherein the line width dimension error of the line pattern is reduced from 5% to 2%, and the error is obviously reduced.
Fig. 15 is a comparison of images of a mask plate after actual repair, wherein a is an image of the mask plate after repair by the current repair method, and b is an image of the mask plate after repair by the repair method according to the embodiment of the application.
Fig. 16 is a comparison of actual repair results measured by AIMS (space image measurement system), wherein a is a repair result obtained by the current repair method, and the line width dimension error of the line pattern is 10%. And b, the graph shows the repairing result of the repairing method, which is adopted in the embodiment of the application, the line width dimension error of the line pattern is reduced from 10% to 3%, and the error is greatly reduced.
Therefore, although the repairing method of the embodiment of the application can obviously reduce the deviation of the repairing boundary of the mask defect.
The fourth aspect of the embodiment of the application also provides a mask structure, which comprises a mask substrate and a mask positioned above the mask substrate and formed by adopting the mask defect repairing method.
In view of the foregoing, it will be evident to those skilled in the art after reading this disclosure that the foregoing application may be presented by way of example only and may not be limiting. Although not explicitly described herein, those skilled in the art will appreciate that the present application is intended to embrace a variety of reasonable alterations, improvements and modifications to the embodiments. Such alterations, improvements, and modifications are intended to be within the spirit and scope of the exemplary embodiments of the application.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Furthermore, the present description describes example embodiments with reference to idealized example cross-sectional and/or plan and/or perspective views. Thus, differences from the illustrated shapes, due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region shown as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the exemplary embodiments.
Claims (12)
1. A mask defect repair method is used for reducing deviation of a mask defect repair boundary and is characterized by comprising the following steps:
providing a mask plate with a convex defect at the edge of the pattern;
determining a defect repair area of the mask, wherein the defect repair area extends from a part of the surface of the protruding defect into the mask, and the short side dimension of the defect repair area extending into the mask is not greater than the minimum development analysis dimension in lithography;
and etching the convex defects and the mask plate of the defect repair area, wherein the short side size of the residual convex defects is not larger than the minimum development analysis size.
2. The method of claim 1, wherein the long side of the defect repair area extending into the reticle is 1-5 times the short side of the defect repair area extending into the reticle, and no more than 70% of the reticle.
3. The method of repairing a reticle defect according to claim 1, wherein the etching is performed by an electron beam etching process, and in the electron beam etching process, an electron beam acceleration voltage is 0.2KV to 3KV, an electron beam current is 10pA to 200pA, and an etching assist gas includes XeF 2 Or the etching auxiliary gas comprises XeF 2 And a mixed gas of at least one of the following gases: h 2 O、N 2 O、Cl 2 And O 2 。
4. The mask defect repair method according to claim 1, wherein the etching is performed by an ion beam etching process, and in the ion beam etching process, an ion beam acceleration voltage is 2KV to 50KV, and an ion beam current is 0.5pA to 25pA; the etching ion source is Ga or Ga compound, and the etching auxiliary gas comprises XeF 2 Or the etching auxiliary gas comprises XeF 2 A mixed gas with at least one of the following gases: h 2 O、N 2 O、Cl 2 And O 2 Or the etching auxiliary gas comprises ferrous iodide.
5. The reticle defect repair method of claim 1, wherein the defect repair area is a polygon or an irregular boundary pattern.
6. A mask structure is characterized by comprising:
a mask plate substrate; the method comprises the steps of,
a reticle positioned above the reticle substrate and formed by the reticle defect repair method of any one of claims 1 to 5.
7. A mask defect repair method is used for reducing deviation of a mask defect repair boundary and is characterized by comprising the following steps:
providing a mask plate comprising a defect pattern, wherein the defect pattern is missing compared with a normal pattern;
determining a defect repair area of the mask, wherein the defect repair area covers the vertex angle and part of the boundary of the defect graph and extends outwards of the defect graph, and the short side dimension of the defect repair area extending out of the defect graph is not larger than the minimum development analysis dimension in photoetching;
and performing deposition repair in the defect repair area.
8. The method according to claim 7, wherein the size of the long side of the defect repair area extending out of the defect pattern is 1 to 5 times the size of the short side of the defect repair area extending out of the defect pattern, and is not more than 70% of the size of the defect pattern.
9. The method for repairing defects of a mask plate according to claim 7, wherein the deposition repairing process is an electron beam deposition process, and in the electron beam deposition process, an electron beam acceleration voltage is 0.2 KV-3 KV and an electron beam current is 10 pA-200 pA; the deposition assist gas comprises TEOS, O 2 、Cr(CO) 6 And Mo (CO) 6 At least one of them.
10. The method according to claim 7, wherein the deposition repair process is an ion beam deposition process, and in the ion beam deposition process, an ion beam acceleration voltage is 2 KV-50 KV, and an ion beam current is 0.5 pA-25 pA; the deposition ion source is Ga or Ga compound, and the deposition auxiliary gas comprises TEOS, O 2 、Cr(CO) 6 、Mo(CO) 6 And at least one of naphthylamines.
11. The reticle defect repair method of claim 7, wherein the defect repair area is a polygon or an irregular boundary pattern.
12. A mask structure is characterized by comprising:
a mask plate substrate; the method comprises the steps of,
a reticle positioned above the reticle substrate and formed by the reticle defect repair method of any one of claims 7 to 11.
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| CN202210526696.6A CN117111402A (en) | 2022-05-16 | 2022-05-16 | Mask defect repairing method and mask structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210526696.6A CN117111402A (en) | 2022-05-16 | 2022-05-16 | Mask defect repairing method and mask structure |
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