CN117097287A - Temperature-control resonator and manufacturing method thereof - Google Patents

Abstract

The application provides a temperature control resonator and a manufacturing method thereof, the temperature control resonator comprises a resonance unit, a driving electrode, a sensing electrode and a heater, wherein the resonance unit comprises a plurality of resonance bodies and connecting beams, the resonance bodies are arranged at intervals and are sequentially connected through the connecting beams, the driving electrode and the resonance unit are arranged at intervals to drive the resonance unit to vibrate, the sensing electrode and the resonance unit are arranged at intervals to detect the vibration frequency of the resonance unit, the heater and the resonance unit are arranged at intervals to regulate the temperature, the heater comprises a plurality of heating units which are arranged at intervals, and the number and the position of the heating units are distributed so that the temperature control resonator meets preset scattering parameters. The temperature control resonator can realize rapid and uniform regulation and control of the overall temperature of the resonator, and further prolongs the service life of the resonator while ensuring the stability of the working performance of the resonator. The manufacturing method has simple and easy-to-realize manufacturing process steps, can realize low-cost large-scale production of the temperature-controlled resonator, and improves the application prospect.

Description

Temperature-control resonator and manufacturing method thereof

Technical Field

The application belongs to the technical field of micro-electromechanical systems, and relates to a temperature control resonator and a manufacturing method thereof.

Background

Microelectromechanical systems (MEMS, micro-Electro-Mechanical System) are a high-tech field based on microelectronics and micromachining technologies. MEMS technology can integrate mechanical components, drive components, electrical control systems, digital processing systems, etc. into one integral miniature unit. The MEMS device has the advantages of small volume, low cost, low power consumption, high reliability, compatibility with integrated circuit technology and the like. The development of MEMS technology opens up a brand new technical field and industry, and the micro sensor, micro actuator, micro component, micro mechanical optical device and power electronic device manufactured by MEMS technology have very broad application prospect in various fields.

MEMS resonators typically comprise a resonator body, a sensing electrode and a driving electrode, the principle of operation of which is: a bias voltage is applied to the resonator, an AC drive voltage is applied to the drive electrode, charges of opposite electrical properties are accumulated on the drive electrode and the resonator, an electrostatic force is generated between the drive electrode and the resonator, a time-varying voltage signal is applied to the drive electrode, a time-varying electrostatic force is generated, the resonator is driven to vibrate, and the sense electrode obtains a vibration signal of the resonator by detecting a change in capacitance between the sense electrode and the resonator due to vibration of the resonator. Based on the working principle of the MEMS resonator, the MEMS resonator is a high-precision instrument, and the quality of the device is reduced along with the gradual reduction of the size of the MEMS resonator, compared with the conventional resonator, the MEMS resonator is more sensitive to environmental changes, the slight environmental changes can greatly affect the parameters of the device and generate noise, including temperature fluctuation noise, brownian motion noise and the like, and the temperature fluctuation noise is mainly caused by the temperature fluctuation of the working environment of the resonator, and can affect the working performance and service life of the resonator when the temperature fluctuates.

Therefore, how to provide a temperature-controlled resonator and a manufacturing method thereof to improve the stability of the working performance of the resonator and prolong the service life of the resonator is an important technical problem to be solved by those skilled in the art.

It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a temperature-controlled resonator and a manufacturing method thereof, which are used for solving the problem that the environmental temperature has a larger influence on the working performance and the service life of the resonator in the prior art.

To achieve the above and other related objects, the present application provides a temperature-controlled resonator comprising:

the resonance unit comprises a plurality of resonance bodies and connecting beams, wherein the resonance bodies are arranged at intervals and are sequentially connected through the connecting beams;

the driving electrode is arranged at intervals with the resonance unit to drive the resonance unit to vibrate;

a sensing electrode spaced apart from the resonance unit to detect a vibration frequency of the resonance unit;

the heater is arranged at intervals with the resonance units to adjust the temperature of the resonance units, the heater comprises a plurality of heating units arranged at intervals, and the number and the position distribution of the heating units enable the temperature control resonators to meet preset scattering parameters.

Optionally, the resonance unit further comprises a substrate and an anchor, and the resonance unit is fixed on the substrate through the anchor.

Optionally, the resonance unit includes a ring shape, and the resonance unit divides the resonator into a first area and a second area, wherein the first area is located inside the resonance unit, and the second area is located outside the resonance unit.

Optionally, the heating unit is located in the first area, and the driving electrode and the sensing electrode are both located in the second area.

Optionally, the heating unit is located in the second area, and the driving electrode and the sensing electrode are both located in the first area.

Optionally, the resonator body comprises a ring shape, and the heating unit is located inside the resonator body.

Optionally, the heating unit is linear, and one end of the heating unit is connected with the connecting beam.

Optionally, the heater is tiled above the resonance unit, or the heater is tiled below the resonance unit.

Optionally, the number of the heating units is an even number, and a plurality of the heating units are symmetrically distributed.

The application also provides a manufacturing method of the temperature-controlled resonator, which comprises the following steps:

providing a semiconductor layer, wherein the semiconductor layer comprises a basal layer, an insulating layer and a device layer which are sequentially stacked from bottom to top;

forming a resonance unit, a driving electrode and a sensing electrode in the device layer, wherein the driving electrode and the sensing electrode are arranged at intervals with the resonance unit, the resonance unit comprises a plurality of resonance bodies and connecting beams, and the resonance bodies are arranged at intervals and are sequentially connected through the connecting beams;

forming a heater, wherein the heater is arranged at intervals with the resonance units and comprises a plurality of heating units which are arranged at intervals, and the number and the position distribution of the heating units are such that the temperature control resonator meets preset scattering parameters;

wherein the step of forming the resonant cells, the drive electrodes and the sense electrodes in the device layer is performed in the same step or stepwise as the step of forming the heater.

As described above, the temperature-controlled resonator comprises the resonance unit, the driving electrode, the sensing electrode and the heater, so that the overall temperature of the resonator can be quickly and uniformly regulated and controlled, the stability of the working performance of the resonator is ensured, and the working performance and the service life of the resonator can be further prolonged. The manufacturing method of the temperature-controlled resonator can manufacture the temperature-controlled resonator with the working temperature being quickly and uniformly adjusted, has simple manufacturing process steps and easy realization, can realize low-cost large-scale production of the temperature-controlled resonator, and improves the application prospect.

Drawings

Fig. 1 is a schematic cross-sectional view of a temperature-controlled resonator according to the present application having a first heater structure.

Fig. 2 is a schematic cross-sectional view of a temperature-controlled resonator according to the present application having a second heater structure.

Fig. 3 is a schematic cross-sectional view of the temperature-controlled resonator of the present application without a heater.

Fig. 4 is a schematic cross-sectional view of a temperature-controlled resonator according to the present application with a third heater structure.

Fig. 5 is a schematic cross-sectional view illustrating a temperature-controlled resonator according to the present application in which a plurality of heating units are connected by a metal layer.

Fig. 6 is a schematic cross-sectional view showing a first arrangement of the heating units in the temperature-controlled resonator according to the present application.

Fig. 7 is a schematic cross-sectional view showing a second arrangement of the heating units in the temperature-controlled resonator according to the present application.

Fig. 8 is a schematic cross-sectional view illustrating a third arrangement of the heating units in the temperature-controlled resonator according to the present application.

Fig. 9 is a schematic cross-sectional view showing a fourth arrangement of the heating units in the temperature-controlled resonator according to the present application.

Fig. 10 is a schematic cross-sectional view illustrating a fifth arrangement of the heating units in the temperature-controlled resonator according to the present application.

Fig. 11 is a schematic cross-sectional view showing a sixth arrangement of the heating units in the temperature-controlled resonator according to the present application.

Fig. 12 is a schematic cross-sectional view showing a temperature-controlled resonator according to the present application, which includes a heating unit and a temperature measuring unit.

Fig. 13 is a schematic cross-sectional view showing a heater in a temperature-controlled resonator according to the present application in a spiral arrangement.

Fig. 14 is a schematic cross-sectional view of a temperature-controlled resonator according to the present application, in which the heaters are arranged in a plurality of groups of symmetrical strips.

Fig. 15 shows a schematic view of a temperature controlled resonator of the present application with a partial longitudinal section at the center of the heater.

Description of element reference numerals

10. Resonant unit

11. Resonator body

12. Connecting beam

20. Driving electrode

21. Outer ring driving electrode

22. Inner ring driving electrode

30. Sensing electrode

31. Outer ring sensing electrode

32. Inner ring sensing electrode

40. Heater

401. Heating unit

50. Anchoring member

60. Column-shaped component

101. Device layer

102. Oxide layer

S1-Sn step

Detailed Description

Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application.

Please refer to fig. 1 to 15. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

Based on the description of the background section, it is known that resonators have relatively high sensitivity, are very sensitive to temperature changes, and their performance and accuracy are affected by ambient temperature, especially in some application scenarios where high accuracy frequency stability is required. If the temperature inside the resonator changes, on one hand, the working parameters of the resonator also change, and the stability of the working performance of the resonator is affected; on the other hand, the resonator often has fragile and sensitive elements inside, and the elements may be damaged or degraded due to too low or too high temperature of the working environment, so as to influence the service life of the resonator. Therefore, the inventor obtains that a plurality of heating units compatible with the resonator structure can be arranged in the resonator to quickly and uniformly adjust the temperature in the resonator after analyzing and testing the problems, so that the temperature is kept in a stable range, the working state and the performance of the resonator are not influenced, and meanwhile, the internal elements are protected, the working stability and the frequency precision of the resonator are ensured, and the working performance and the service life of the resonator are prolonged.

Example 1

Referring to fig. 1, a schematic cross-sectional structure of the temperature-controlled resonator having a first heater structure is shown in the embodiment, and the temperature-controlled resonator includes a resonance unit 10, a driving electrode 20, a sensing electrode 30 and a heater 40 (not shown in fig. 1).

Specifically, the resonance unit 10 includes a plurality of resonance bodies 11 and connection beams 12, and the plurality of resonance bodies 11 are arranged at intervals and are sequentially connected through the connection beams 12; the driving electrode 20 is spaced apart from the resonance unit 10 to drive the resonance unit 10 to vibrate; the sensing electrode 30 is spaced apart from the resonance unit 10 to detect the vibration frequency of the resonance unit 10, and the sensing electrode 30 is symmetrically disposed with the driving electrode 20; the heater 40 is spaced from the resonance unit 10 to adjust the temperature of the resonance unit 10, the heater 40 includes a plurality of heating units 401 disposed at intervals, and the number and the position of the heating units 401 are distributed so that the temperature-controlled resonator satisfies a preset scattering parameter (also called S parameter), and the structures of the heating units may be the same or different. In this embodiment, the number of the resonant bodies 11 and the connection beams 12 is 12, and in other embodiments, the number of the above structures may be set based on actual needs.

As an example, the range of values of the preset scattering parameter is-100 db to 0db, including-100 db to 80db, -80db and greater than-80 db, where the scattering parameter is a parameter describing the signal transmission condition, and can reflect the characteristics of the reflected signal and the output signal of the component, and the scattering parameter can ensure the integrity of the signal transmitted through the resonator in the preset range, so as to realize the detection of the signal by the circuit.

As an example, the resonant unit 10 may be manufactured using a semiconductor material, and may include: 1. composed of one or more materials of group IV of the periodic Table of elements, such as silicon, germanium, carbon, silicon germanium, or silicon carbide; 2. III-V compounds such as gallium phosphide, aluminum gallium phosphide, and the like; 3. metal silicides, germanides, and carbides, such as nickel silicide, cobalt silicide, tungsten carbide, or platinum germanium silicide, and the like; 4. doping variants such as phosphorus, arsenic, antimony, boron or aluminum doped silicon, germanium, carbon or combinations (e.g., silicon germanium, silicon carbide, etc.); 5. the four materials described above have various crystal structures including any one or any combination of single crystal, polycrystalline, nanocrystalline, and amorphous, such as regions having single crystal and polycrystalline structures (whether doped or undoped).

As an example, the materials of the driving electrode 20 and the sensing electrode 30 are consistent with the materials of the resonant unit 10, so that the resonant unit 10, the driving electrode 20 and the sensing electrode 30 can be manufactured simultaneously in a one-step process, and the manufacturing steps and the cost of the process are effectively saved.

By way of example, the resonant cells 10 may be formed in or on an insulator using well known photolithography, etching, deposition and/or doping techniques, such as, for example, a Semiconductor (SOI) substrate.

The driving electrode is used for inducing the resonance unit to resonate, and the sensing electrode is used for detecting the resonance of the resonance unit and outputting a signal. With the resonance of the resonance unit, the distance (gap value) between the resonance unit and the sensing electrode is changed, so that the capacitance between the sensing electrode and the resonance unit is changed, and the sensing electrode measures the capacitance change to generate a stable frequency output signal. There will be at least one drive electrode and one sense electrode for each resonant cell and the number of both will be the same. For some differential circuits, the driving electrode 20 and the sensing electrode 30 corresponding to each resonator may be disposed in pairs, where the driving electrode and the sensing electrode may be disposed on one side of the resonant unit, for example, both are located on the inner side of the resonant unit or both are located on the outer side of the resonant unit. The differential driving/detection of the resonator can be realized by arranging the driving electrodes and the sensing electrodes in pairs, so that the parasitic capacitance and the feed-through capacitance of the device can be effectively reduced, and the detection precision of the device is improved.

As an example, the temperature-controlled resonator further includes a substrate (not shown in fig. 1) and an anchor 50, the resonating unit 10 is fixed to the substrate by the anchor 50, and all regions of the resonating unit 10 except for a portion connected to the anchor are in a suspended state so as to be sufficiently vibrated by an electrostatic force.

As an example, the temperature-controlled resonator further includes a first anchor point (not shown in fig. 1) through which the driving electrode 20 is fixed to the substrate, and a second anchor point (not shown in fig. 1) through which the sensing electrode 30 is fixed to the substrate, and the driving electrode 20 and the sensing electrode 30 are in a floating state except for regions other than the anchor points corresponding to each other.

As an example, the resonance unit 10 is connected to the anchors 50 through a predetermined number of connection beams 12, in this embodiment, the number of connection beams 12 fixedly connected to the anchors 50 is 4, and in other embodiments, the number of connection beams 12 connected to the anchors 50 may be 4 or less or 4 or more, so that the fixation of the resonance unit 10 to the substrate can be satisfied.

As an example, the resonance unit 10 includes a ring shape, and the resonance unit 10 divides the resonator into a first region and a second region, wherein the first region is located inside the resonance unit 10, and the second region is located outside the resonance unit 10. Further, the resonance unit 10 may have a circular ring shape, a rectangular ring shape, or an irregular ring shape, so long as the structure of the resonance unit 10 forms a closed ring area, preferably a symmetrical ring shape, which is beneficial to reducing the manufacturing difficulty, and in this embodiment, the resonance unit 10 is similar to a cross ring shape. Of course, in other embodiments, the resonant cells 10 may be arranged in other ways, which are not limited herein.

As an example, the number of the heating units is an even number, a plurality of the heating units are symmetrically distributed, and further, a plurality of the heating units 401 are uniformly distributed on the outer side or the inner side of the resonance unit 10 and maintain a small distance from the resonance body 11 as much as possible, so as to achieve rapid and uniform adjustment of the temperature of each resonance body 11.

As an example, the heating unit 401 is located in the first region, and the driving electrode 20 and the sensing electrode 30 are both located in the second region. That is, the plurality of heater 40 units are distributed around the periphery of the annular region formed by the resonance unit 10, and the driving electrode 20 and the sensing electrode 30 are both located in the annular region formed by the resonance unit 10, and the driving electrode 20 and the sensing electrode 30 are axisymmetric with respect to the central axis of the resonance unit 10.

In another embodiment, referring to fig. 2, a schematic cross-sectional structure of the temperature controlled resonator with a second heater structure is shown, the heating unit 401 is located in the second area, and the driving electrode 20 and the sensing electrode 30 are both located in the first area. That is, the plurality of heating units 401 are distributed in the annular region formed by the resonance unit 10, and the driving electrode 20 and the sensing electrode 30 are located at the periphery of the annular region formed by the resonance unit 10, and the driving unit and the sensing electrode 30 are axisymmetric with respect to the central axis of the resonance unit 10.

Specifically, referring to fig. 3, a schematic cross-sectional structure of the temperature controlled resonator is shown when no heater is provided, in the case that no heater 40 is provided, the driving electrode 20 and the sensing electrode 30 are distributed inside and outside a ring area formed by the resonant unit 10, wherein a portion of the driving electrode 20 located outside the ring area is an outer ring driving electrode 21, a portion of the driving electrode 20 located inside the ring area is an inner ring driving electrode 22, a portion of the sensing electrode 30 located outside the ring area is an outer ring sensing electrode 31, a portion of the sensing electrode 30 located inside the ring area is an inner ring sensing electrode 32, and under the condition that impedance is low enough, a portion of the driving electrode 20 and a portion of the sensing electrode 30 are reserved for driving or detecting, a remaining portion of the driving electrode 20 and the sensing electrode 30 can be replaced with the heater 40 (or a temperature measurer), a temperature supplementing and regulating function can be added while a device area is saved, for example, a portion of the sensing electrode 31 located outside the ring area is reserved for the driving electrode 40 and the sensing electrode 30 is replaced with the driving electrode 40 and the sensing electrode 40 located inside the ring area is replaced with the driving electrode 40, and the sensing electrode 30 is replaced with the inner ring sensing electrode 40, and the vibrating unit 401 is replaced with the heater 32; alternatively, the inner ring sensing electrode 32 and the inner ring driving electrode 22 are reserved for driving the resonance unit 10 and detecting the vibration signal, respectively, and the outer ring sensing electrode 31 and the outer ring driving electrode 21 are replaced with the heating unit 401 to jointly constitute the heater 40.

As an example, the resonator body 11 includes a ring shape, and a columnar member 60 is provided in a ring-shaped region of the resonator body 11, wherein half of the columnar member 60 in the resonator body 11 is a part of the driving electrode 20, and the remaining half of the columnar member 60 in the resonator body 11 is a part of the sensing electrode 30, that is, in a case where the resonator body 11 is of a non-ring type (the inside of the resonator body 11 does not have the columnar member 60), the driving electrode 20 and the sensing electrode 30 are located inside and/or outside the resonator unit 10, respectively; in the case that the resonator 11 is ring-shaped (the resonator 11 has the pillar-shaped component 60 inside), the driving electrode 20 and the sensing electrode 30 may further include a pillar-shaped component 60 located inside the resonator 11, and in an embodiment, the differential driving/detection may be implemented by using a differential circuit formed by the electrode formed by the pillar-shaped component 60 and the electrode located in the first area or the second area. However, in another embodiment, when the area of the driving electrode 20 and the sensing electrode 30 is sufficient, the area of the cylindrical member inside the resonator 11 is smaller due to the size, and the function of the cylindrical member 60 is selected to be abandoned in consideration of the process and the structure, and the grounding process or the suspension arrangement is selected, so that the specific structures of the driving electrode 20 and the sensing electrode 30 are arranged based on the actual needs, the area utilization rate of the cylindrical member 60 can be increased in a limited space to achieve the miniaturization of the resonator, and the function of the cylindrical member 60 can be selectively abandoned in the application situation with loose space limitation of the resonator.

In an embodiment, referring to fig. 4, a schematic cross-sectional structure of the temperature-controlled resonator with a third heater structure is shown, where the resonator body is ring-shaped, the heating unit is located inside the resonator body, that is, when the resonator body 11 is ring-shaped, a columnar component 60 is located in the ring-shaped area of the resonator body 11, and conventionally, the columnar component 60 is used as a part of the driving electrode 20 or the sensing electrode 30 or directly gives up its function, but when the heater 40 is provided, it is considered that the function of the part is replaced by driving or detecting, so as to improve the utilization rate of the device structure, and the area occupied by the columnar component 60 is relatively small and located inside the resonator body 11, so that accurate heating of the resonator unit 10 can be achieved (equivalent to replacing the function of the columnar component in fig. 3 with a heating function).

As an example, the plurality of heating units 401 may be connected to each other (for example, may be connected by a metal layer located above the heating units 401), or the plurality of heating units 401 may be completely independent from each other (i.e., not connected to each other and then heated separately), in this embodiment, it is preferable that the plurality of heating units 401 are connected by a metal layer (as shown in fig. 5), and then heated synchronously by joule heat, so that the consistency of the temperature of each part of the resonance unit 10 can be ensured, and further the stability of the working performance of the temperature-controlled resonator is ensured.

For example, the material of the heater 40 is preferably the same as the material of the resonance unit 10, and may be a material such as metal, monocrystalline silicon, or polycrystalline silicon. In this way, the heater 40 can be manufactured simultaneously with the manufacture of the resonance unit 10, without adding additional cost and with a process that is fully compatible. It should be noted that parameters such as the structural size, width, thickness, etc. of the heater 40 may be designed according to needs to improve the heating efficiency, the heating temperature range, and the temperature measurement accuracy.

Specifically, the temperature-controlled resonator of the present embodiment is provided with a heater composed of a plurality of heating units, so that it can be ensured that the scattering parameter of the temperature-controlled resonator is within a preset range, and the integrity of signals can be ensured to be detected by a circuit, so that, for example, the outer ring electrode (including the outer ring sensing electrode 31 and/or the outer ring driving electrode 21) is replaced by the heater 40, after all the outer ring electrodes are replaced by the heater 40, the impedance of the resonator is increased from original 6k (when no heater is provided) to 13k, the s parameter is changed from original-35 db to-42 db, and the s parameter is kept within a range of-100 db to 0db, which indicates that after all the outer ring electrodes are replaced by the heater 40, the circuit can detect signals (signals have integrity), and meanwhile, a heating function is added.

Specifically, in this embodiment, the heater may implement a heating function and also may implement a temperature measurement function, and calculate a real-time temperature of the resonant unit by using a heating resistor, where a specific principle is that under a rule that a resistivity of the heater increases linearly with temperature, a temperature coefficient of resistance of the heater is fixed to be a constant, corresponding data of a resistance of the heater changing with temperature can be obtained through a test, joule heat can be applied to two end electrodes through a four-electrode method, and then resistance detection is performed on the two end electrodes. As described above, the method for realizing resistance measurement is a four-electrode method which can be used for measuring electrical parameters such as resistance, conductivity, resistivity, and the like, and which avoids the influence of wire resistance and contact resistance on the measurement result by separating the current leads and the voltage leads, and improves the accuracy and precision of measurement, in the four-electrode method, the current leads and the voltage leads are respectively connected to four electrodes, two of which are used for applying current (applying voltage to form a potential difference), and the other two of which are used for measuring voltage. In this way, the influence of the wire resistance and the contact resistance can be eliminated, thereby obtaining a more accurate resistance value. When measuring the resistance, joule heat can be added to both ends, and the resistance value can be calculated by measuring the voltage and the current. The method is suitable for resistance measurement of various materials, including conductors, semiconductors, insulators and the like.

The temperature control resonator of the embodiment can realize the rapid and uniform regulation and control of the overall temperature of the resonator, and can further prolong the working performance and the service life of the resonator while ensuring the stability of the working performance of the resonator. In addition, the temperature control resonator of the embodiment has the advantages that the conventional driving electrode and the conventional sensing electrode are partially replaced by the heating unit, the manufacturing method is simple, an additional area is not required to be arranged to form a heater structure, the temperature control resonator can be completely compatible with the manufacturing process of the resonance unit, and additional manufacturing steps and cost are not increased.

Example two

The difference between the present embodiment and the first embodiment is that the heater structure in the present embodiment is not the inner side and/or the outer side of the distributed resonance unit or the inner side embedded in the resonance body, but is connected to the connection beam of the resonance unit. Referring to fig. 6, a schematic cross-sectional structure of a temperature-controlled resonator of the present embodiment is shown, and the temperature-controlled resonator includes a resonance unit 10, a driving electrode 20, a sensing electrode 30 and a heater 40 (not shown in fig. 6).

As an example, the heating unit 401 is in a linear shape, one end of the heating unit 401 is connected to the connection beam 12, and the other end of the heating unit 401 extends out of the resonance unit and is connected to an external power source. At this time, the number of the heating units 401 is smaller than or equal to the number of the connection beams 12 to ensure that the heating units can be carried, in this embodiment, the number of the heating units 401 is smaller than the number of the connection beams 12, that is, only part of the connection beams 12 are connected with the heating units 401, and the rest of the connection beams 12 are not provided with the heating units 401, so that accurate control of temperature is facilitated under the condition of meeting the temperature regulation function of the resonance unit 10. Of course, in other embodiments, all the connection beams 12 may be connected with the heating unit 401, so that the rapid temperature rise of the resonance unit 10 can be realized, and the heating efficiency can be improved. In addition, when the connection beam 12 is connected with the heating units 401, the heating units 401 may be connected with any position (such as a middle area or one end) of the connection beam 12, so that the number of the heating units 401 may be reasonably set based on actual needs, and the contact area and specific contact position of the heating units 401 and the connection beam 12, preferably, the above parameters of all the heating units 401 are kept consistent, so as to ensure performance consistency of the temperature control resonator.

As an example, the resonance unit 10 includes a ring shape, and the resonance unit 10 divides the resonator into a first region and a second region, wherein the first region is located inside the resonance unit 10, and the second region is located outside the resonance unit 10. At this time, the driving electrode 20 and the sensing electrode 30 may be disposed in the first region and/or the second region. In this embodiment, the resonant unit 10 is shaped like a cross, referring to fig. 6 to 9, the heating unit may be connected to the connecting beams 12 of the upper half, the lower half, the left half and the right half of the cross, or referring to fig. 10 to 12, the heating unit is connected to the connecting beams 12 passing through the transverse symmetry axis or the longitudinal symmetry axis of the cross, the black arcs in fig. 6 to 12 are the heating unit, wherein fig. 12 includes a set of arcs and a set of curves, the arcs are the heating unit 401 for applying voltages at two ends to form a potential difference to apply joule heat, the curves are the temperature measuring unit for realizing resistance detection to realize temperature measurement, and fig. 6 to 11 include only a set of arcs for applying joule heat, i.e. the heating unit in this embodiment is a resistance wire structure.

The temperature control resonator of the embodiment can realize the rapid and uniform regulation and control of the overall temperature of the resonator, and can further prolong the working performance and the service life of the resonator while ensuring the stability of the working performance of the resonator. In addition, the temperature control resonator of the embodiment is characterized in that each heating unit in the heater structure is arranged on the connecting beam, a heater suspension structure is not required to be additionally arranged, the heating unit is simple in structure, the temperature control resonator is manufactured on the basis of the processed resonance unit, and the process difficulty is low. Further, if the columnar member in the resonator is further used, the heating efficiency can be further improved.

Example III

The difference between the temperature-controlled resonator according to the present embodiment and the first and second embodiments is that the heater is tiled above or below the resonance unit in the present embodiment, please refer to fig. 13, which is a schematic cross-sectional structure diagram of the temperature-controlled resonator when the heater is tiled above or below the resonance unit, and the temperature-controlled resonator includes the resonance unit 10, the driving electrode 20, the sensing electrode 30 and the heater 40.

As an example, the heater 40 is tiled above the resonance unit 10, or the heater 40 is tiled below the resonance unit 10.

Further, the heaters 40 are arranged in a spiral shape (i.e., the heaters 40 are formed of a plurality of strip-shaped heating units arranged at intervals). The spiral arrangement structure of the heater 40 can increase the resistance value to improve the heating efficiency, and can cover the whole area of the resonance unit 10 as much as possible, so that each area of the resonance unit 10 is heated uniformly, and the phenomenon of too low or too high local temperature can not occur, thereby improving the stability of the working performance of the resonator. Of course, the heater 40 may take other shapes of arrangement, and under the condition of ensuring the working performance of the resonator, the reasonable arrangement is performed by comprehensively considering the difficulty of the manufacturing process, for example, the heater 40 takes a plurality of groups of symmetrical strip-shaped arrangement (as shown in fig. 14).

As an example, the heater 40 is manufactured by a polysilicon epitaxy process, and the polysilicon heater 40 is disposed on the top or bottom of the resonator unit to heat and measure temperature, which is fully compatible with the manufacturing process of the resonator, and the heater 40 structure can be manufactured without adding other metal layers and additional process steps. Taking the specific manufacturing method that the heater 40 is tiled above the resonant unit 10 as an example, by covering the device layer 101 (the structural layer where the resonant unit 10, the driving electrode 20 and the sensing electrode 30 are located) with the oxide layer 102, etching the region where the anchor of the resonator is located to expose the oxide layer 102, then extending the polysilicon pattern on the oxide layer 102, etching the polysilicon pattern, etching the oxide layer 102 with hydrofluoric acid, controlling the width of the heating resistor, and making the resonant unit 10 in the resonator successfully released to be movable, please refer to fig. 15, which shows a schematic diagram with a partial longitudinal section at the center of the heater 40, at this time, the anchor of the resonator and the central region of the heater 40 are connected, the region of the heater 40 except the central region is suspended, and the polysilicon with the delay outside the polysilicon can be high-resistance polysilicon.

As an example, the plurality of heating units 401 may be connected to each other (for example, may be connected by a metal layer located above the heating units 401 or directly connected to each other), or the plurality of heating units 401 may be completely independent from each other (i.e., not connected to each other and then heated separately), in this embodiment, the plurality of heating units 401 may be connected to each other to form an integral structure, and then heated synchronously by joule heat, so that the consistency of the temperatures of the resonance units 10 may be ensured, and further the stability of the working performance of the temperature-controlled resonator may be ensured. Of course, in other embodiments, groups of strip heater 40 units may be provided separately from each other.

The temperature control resonator of the embodiment can realize the rapid and uniform regulation and control of the overall temperature of the resonator, and can further prolong the working performance and the service life of the resonator while ensuring the stability of the working performance of the resonator. In addition, the temperature control resonator of the embodiment is provided with the heater structure above or below the resonance unit through the polysilicon epitaxy process, so that each area of the resonance unit is heated uniformly, and the stability of the working performance of the resonator is further improved.

Example IV

The present embodiment provides a method for manufacturing a temperature-controlled resonator, which can be used for manufacturing the temperature-controlled resonator described in any one of the first to third embodiments, and includes the following steps:

providing a semiconductor layer, wherein the semiconductor layer comprises a basal layer, an insulating layer and a device layer which are sequentially stacked from bottom to top;

forming a resonance unit, a driving electrode and a sensing electrode in the device layer, wherein the driving electrode and the sensing electrode are arranged at intervals with the resonance unit and are symmetrically arranged with the sensing electrode, the resonance unit comprises a plurality of resonance bodies and connecting beams, and the resonance bodies are arranged at intervals and are sequentially connected through the connecting beams;

forming a heater, wherein the heater is arranged at intervals with the resonance units and comprises a plurality of heating units which are arranged at intervals, and the number and the position distribution of the heating units are such that the temperature control resonator meets preset scattering parameters;

wherein the steps of forming the resonant cells, the drive electrodes and the sense electrodes in the device layer and the step of forming the heater are performed in the same step or stepwise

Specifically, when the temperature controlled resonator is manufactured, if the heater structure in the temperature controlled resonator is replaced by only a conventional partial driving electrode and a sensing electrode, the resonant unit, the driving electrode, the sensing electrode and the heater can be manufactured in the same step, and the heater is located in the device layer; or when the heater in the temperature-controlled resonator comprises a part positioned on the connecting beam or is tiled above or below the resonance unit, namely, the heater structure or a part of the heater structure is formed after the resonance unit, the driving electrode and the sensing electrode are manufactured.

The semiconductor layer may include an SOI wafer, for example, and may be other wafer structures including the base layer, the insulating layer, and the device layer.

As an example, the thickness of the base layer is greater than the thickness of the device layer, which is greater than the thickness of the insulating layer. The thickness of the base layer is larger than that of the device layer, so that all parts formed in the device layer can be stably supported, the stability of the overall structure of the resonator is guaranteed, and after the thickness of the device layer is larger than that of the insulating layer, the resonant unit and other structures can be formed in the device layer, the release time of the resonant unit is effectively shortened, and the manufacturing efficiency is improved.

The manufacturing method of the temperature control resonator can manufacture the temperature control resonator with the working temperature being quickly and evenly adjusted, the manufacturing process steps are simple and easy to realize, low-cost large-scale production of the temperature control resonator can be realized, and the application prospect of the temperature control resonator is improved.

In summary, the temperature-controlled resonator can realize rapid and uniform regulation and control of the overall temperature of the resonator, ensure the stability of the working performance of the resonator, and further prolong the working performance and the service life of the resonator. The manufacturing method of the temperature-controlled resonator can manufacture the temperature-controlled resonator with the working temperature being quickly and uniformly adjusted, has simple manufacturing process steps and easy realization, can realize low-cost large-scale production of the temperature-controlled resonator, and improves the application prospect. Therefore, the application effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Accordingly, it is intended that all equivalent modifications and variations of the application be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. A temperature-controlled resonator, comprising:

the resonance unit comprises a plurality of resonance bodies and connecting beams, wherein the resonance bodies are arranged at intervals and are sequentially connected through the connecting beams;

the driving electrode is arranged at intervals with the resonance unit to drive the resonance unit to vibrate;

a sensing electrode spaced apart from the resonance unit to detect a vibration frequency of the resonance unit;

the heater is arranged at intervals with the resonance units to adjust the temperature of the resonance units, the heater comprises a plurality of heating units arranged at intervals, and the number and the position distribution of the heating units enable the temperature control resonators to meet preset scattering parameters.

2. A temperature-controlled resonator as claimed in claim 1, wherein: the resonance unit is fixed on the substrate through the anchoring piece.

3. A temperature-controlled resonator as claimed in claim 1, wherein: the resonance unit comprises a ring, and divides the resonator into a first area and a second area, wherein the first area is positioned at the inner side of the resonance unit, and the second area is positioned at the outer side of the resonance unit.

4. A temperature-controlled resonator as claimed in claim 3, characterized in that: the heating unit is located in the first area, and the driving electrode and the sensing electrode are both located in the second area.

5. A temperature-controlled resonator as claimed in claim 3, characterized in that: the heating unit is located in the second area, and the driving electrode and the sensing electrode are both located in the first area.

6. A temperature-controlled resonator as claimed in claim 1, wherein: the resonator body includes a ring shape, and the heating unit is located inside the resonator body.

7. A temperature-controlled resonator as claimed in claim 1, wherein: the heating unit is linear, and one end of the heating unit is connected with the connecting beam.

8. A temperature-controlled resonator as claimed in claim 1, wherein: the heater is tiled above the resonance unit, or the heater is tiled below the resonance unit.

9. A temperature-controlled resonator as claimed in claim 1, wherein: the number of the heating units is even, and a plurality of the heating units are symmetrically distributed.

10. The manufacturing method of the temperature-controlled resonator is characterized by comprising the following steps of:

providing a semiconductor layer, wherein the semiconductor layer comprises a basal layer, an insulating layer and a device layer which are sequentially stacked from bottom to top;

forming a resonance unit, a driving electrode and a sensing electrode in the device layer, wherein the driving electrode and the sensing electrode are arranged at intervals with the resonance unit, the resonance unit comprises a plurality of resonance bodies and connecting beams, and the resonance bodies are arranged at intervals and are sequentially connected through the connecting beams;

forming a heater, wherein the heater is arranged at intervals with the resonance units and comprises a plurality of heating units which are arranged at intervals, and the number and the position distribution of the heating units are such that the temperature control resonator meets preset scattering parameters;

wherein the step of forming the resonant cells, the drive electrodes and the sense electrodes in the device layer is performed in the same step or stepwise as the step of forming the heater.