CN117097157A - Bidirectional buck-boost direct current solid-state transformer, control method, device and medium thereof - Google Patents

Abstract

The invention relates to the technical field of transformer control, and provides a bidirectional buck-boost direct current solid-state transformer, a control method, a control device and a control medium thereof. The bidirectional buck-boost direct current solid-state transformer comprises: the first semiconductor component is connected with the first connecting end; the first semiconductor component is used for adjusting the step-down coefficient between the first direct current power supply and the second direct current power supply under the condition that the voltage of the first direct current power supply is larger than that of the second direct current power supply; the second semiconductor component is connected with the second connecting end; the second semiconductor component is used for adjusting the boosting coefficient between the first direct current power supply and the second direct current power supply under the condition that the voltage of the first direct current power supply is smaller than that of the second direct current power supply; the inductance component is respectively connected with the first semiconductor component and the second semiconductor component and stores electric energy of the first direct current power supply or the second direct current power supply.

Description

Bidirectional step-up and step-down DC solid-state transformer and its control method, device and medium

Technical field

The present invention relates to the technical field of transformer control, and specifically to a bidirectional step-up and step-down DC solid-state transformer and its control method, device and medium.

Background technique

An energy storage system is a system that stores electrical energy through a power supply. The energy storage system includes multiple DC power supplies and DC transformers. The DC transformer is used to adjust the transmission voltage between multiple DC power supplies. However, the current DC transformer has difficulties in adjusting the transformation coefficient. , problems such as low transformer efficiency.

Contents of the invention

The present invention aims to at least solve the technical problems such as difficulty in adjusting the transformation coefficient and low transformation efficiency existing in the prior art or related technologies.

To this end, a first aspect of the present invention is to propose a bidirectional step-up and step-down DC solid-state transformer.

The second aspect of the present invention is to propose a control method for a bidirectional step-up and step-down DC solid-state transformer.

The third aspect of the present invention is to propose a control device for a bidirectional step-up and step-down DC solid-state transformer.

The fourth aspect of the present invention is to propose another control device for a bidirectional step-up and step-down DC solid-state transformer.

A fifth aspect of the present invention is to provide a readable storage medium.

In view of this, according to a first aspect of the present invention, a bidirectional step-up and step-down DC solid-state transformer is proposed. The bi-directional step-up and step-down DC solid-state transformer is used for voltage conversion between the first DC power supply and the second DC power supply. The bidirectional step-up and step-down DC solid-state transformer includes: a first connection end and a second connection end, the first connection end is used to connect to the first DC power supply, and the second connection end is used to connect to the second DC power supply; a first semiconductor component , the first semiconductor component is connected to the first connection end; when the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component is used to adjust the relationship between the first DC power supply and the second DC power supply. voltage reduction coefficient; the second semiconductor component is connected to the second connection terminal; when the voltage of the first DC power supply is less than the voltage of the second DC power supply, the second semiconductor component is used to adjust the first DC power supply. a voltage boost coefficient between the current power supply and the second DC power supply; an inductance component, the inductance component is connected to the first semiconductor component and the second semiconductor component respectively, and the inductance component stores the electrical energy of the first DC power supply or the second DC power supply.

The bidirectional step-up and step-down DC solid-state transformer in this technical solution includes a first semiconductor component and a second semiconductor component. When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component adjusts the first The voltage reduction coefficient between the DC power supply and the second DC power supply is adjusted by the second semiconductor component when the voltage of the first DC power supply is less than the voltage of the second DC power supply. The voltage boost coefficient between them greatly improves the adjustment efficiency of the transformation coefficient in the bidirectional step-up and step-down DC solid-state transformer, thereby improving the transformation efficiency of the bi-directional step-up and step-down DC solid-state transformer, and at the same time realizes the bi-directional step-up and step-down DC solid-state transformer. Buck, expanding the application range of bidirectional step-up and step-down DC solid-state transformers.

According to the second aspect of the present invention, a control method for a bidirectional step-up and step-down DC solid-state transformer is proposed. The bi-directional step-up and step-down DC solid-state transformer is a bi-directional step-up and step-down DC solid-state transformer in any of the above technical solutions. Voltage DC solid-state transformers are used in energy storage systems. The energy storage system includes a first DC power supply, a second DC power supply and a bidirectional step-up and step-down DC solid-state transformer. The bi-directional step-up and step-down DC solid-state transformers are respectively connected with the first DC power supply and the second The DC power supply connection, the control method of the bidirectional step-up and step-down DC solid-state transformer includes: obtaining the first transformation coefficient between the first DC power supply and the second DC power supply; and obtaining the first semiconductor component in the bi-directional step-up and step-down DC solid-state transformer. The first temperature and the second temperature of the second semiconductor component; according to the first temperature and the second temperature, the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer is adjusted to the first transformation coefficient.

The control method of the bidirectional step-up and step-down DC solid-state transformer in this technical solution adjusts the second transformation coefficient of the bi-directional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, ensuring the bidirectional step-up and step-down DC solid-state transformer. The operational performance of the step-down DC solid-state transformer expands the application scope of the bidirectional step-up and step-down DC solid-state transformer.

According to the third aspect of the present invention, a control device for a bidirectional step-up and step-down DC solid-state transformer is proposed. The bi-directional step-up and step-down DC solid-state transformer is a bi-directional step-up and step-down DC solid-state transformer in any of the above technical solutions. Voltage DC solid-state transformers are used in energy storage systems. The energy storage system includes a first DC power supply, a second DC power supply and a bidirectional step-up and step-down DC solid-state transformer. The bi-directional step-up and step-down DC solid-state transformers are respectively connected with the first DC power supply and the second DC power supply connection, the control device of the bidirectional step-up and step-down DC solid-state transformer includes: an acquisition module, used to obtain the first transformation coefficient between the first DC power supply and the second DC power supply; the acquisition module, also used to obtain the bi-directional step-up and step-down DC solid-state transformer. The first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the step-down DC solid-state transformer; the control module is used to control the second transformer of the bidirectional step-up and step-down DC solid-state transformer according to the first temperature and the second temperature. The voltage coefficient is adjusted to the first voltage transformation coefficient.

The control device of the bidirectional step-up and step-down DC solid-state transformer in this technical solution adjusts the second transformation coefficient of the bi-directional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, ensuring the bidirectional step-up and step-down DC solid-state transformer. The operational performance of the step-down DC solid-state transformer expands the application scope of the bidirectional step-up and step-down DC solid-state transformer.

According to the fourth aspect of the present invention, a control device for a bidirectional step-up and step-down DC solid-state transformer is proposed, which includes a processor and a memory. Programs or instructions are stored in the memory. When the program or instructions are executed by the processor, the above-mentioned steps are implemented. The steps of the control method of the bidirectional step-up and step-down DC solid-state transformer in any technical solution. Therefore, the control device of the bidirectional step-up and step-down DC solid-state transformer has all the beneficial effects of the control method of the bi-directional step-up and step-down DC solid-state transformer in any of the above technical solutions, and will not be described again here.

According to the fifth aspect of the present invention, a readable storage medium is proposed, on which a program or instructions are stored. When the program or instructions are executed by a processor, the bidirectional step-up and step-down DC solid-state transformer in any of the above technical solutions is implemented. control method. Therefore, the readable storage medium has all the beneficial effects of the control method of the bidirectional step-up and step-down DC solid-state transformer in any of the above technical solutions, which will not be described again here.

Additional aspects and advantages of the invention will be apparent from the description which follows, or may be learned by practice of the invention.

Description of the drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

Figure 1 shows one of the circuit schematic diagrams of a bidirectional step-up and step-down DC solid-state transformer in an embodiment of the present invention;

Figure 2 shows the second circuit schematic diagram of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 3 shows the third circuit schematic diagram of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 4 shows the fourth circuit schematic diagram of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 5 shows the fifth circuit schematic diagram of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 6 shows one of the schematic flow diagrams of the control method of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 7 shows the second schematic flow chart of the control method of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 8 shows the third schematic flowchart of the control method of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 9 shows one of the structural block diagrams of the control device of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Figure 10 shows a schematic diagram of a control device of a bidirectional step-up and step-down DC solid-state transformer in an embodiment of the present invention;

Figure 11 shows the second structural block diagram of the control device of the bidirectional step-up and step-down DC solid-state transformer in the embodiment of the present invention;

Among them, the corresponding relationship between the reference signs and component names in Figures 1 to 5 is:

100 bidirectional step-up and step-down DC solid-state transformer, 101 first connection end, 102 second connection end, 103 first semiconductor component, 104 second semiconductor component, 105 inductor component, 1031 first semiconductor device, 1032 second semiconductor device, 1041 Third semiconductor device, 1042 fourth semiconductor device, 1033 first insulated gate transistor, 1034 second insulated gate transistor, 1035 first diode, 1036 second diode, 1037 third insulated gate transistor, 1038 fourth insulated Gate transistor, 1039 third diode, 1040 fourth diode, 1043 fifth insulated gate transistor, 1044 sixth insulated gate transistor, 1045 fifth diode, 1046 sixth diode, 1047 seventh insulated gate Transistor, 1048 eighth insulated gate transistor, 1049 seventh diode, 1050 eighth diode, 1051 first inductor, 1052 second inductor, 1061 first capacitor, 1062 second capacitor, 1063 third capacitor, 1064 Four capacitors.

Detailed ways

In order to more clearly understand the above objects, features and advantages of the present invention, the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, as long as there is no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

Many specific details are set forth in the following description to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited to the specific details disclosed below. Limitations of Examples.

The following is a detailed description of the bidirectional step-up and step-down DC solid-state transformer and its control method, device and medium provided by the embodiments of the present application through specific embodiments and application scenarios with reference to FIGS. 1 to 11 .

As shown in Figure 1, an embodiment of the present invention provides a bidirectional step-up and step-down DC solid-state transformer 100. The bi-directional step-up and step-down DC solid-state transformer 100 includes:

The first connection end 101 and the second connection end 102, the first connection end 101 is used to connect to the first DC power supply, and the second connection end 102 is used to connect to the second DC power supply;

The first semiconductor component 103 is connected to the first connection terminal 101;

When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component 103 is used to adjust the voltage reduction coefficient between the first DC power supply and the second DC power supply;

The second semiconductor component 104 is connected to the second connection terminal 102;

When the voltage of the first DC power supply is less than the voltage of the second DC power supply, the second semiconductor component 104 is used to adjust the voltage boost coefficient between the first DC power supply and the second DC power supply;

The inductor component 105 is connected to the first semiconductor component 103 and the second semiconductor component 104 respectively. The inductor component 105 stores the electrical energy of the first DC power supply or the second DC power supply.

In this embodiment, a bidirectional buck-boost DC solid-state transformer 100 is provided, wherein the bi-directional buck-boost DC solid-state transformer 100 is used for voltage conversion between a first DC power supply and a second DC power supply. The first DC power supply is The current power supply and the second DC power supply are DC power supplies capable of storing electrical energy.

For example, the first DC power supply and the second DC power supply may be DC power supplies with different voltages.

The bidirectional step-up and step-down DC solid-state transformer 100 includes a first connection end 101 and a second connection end 102. The first connection end 101 is used to connect to a first DC power source, and the second connection end 102 is used to connect to a second DC power source. connect.

For example, the first connection end 101 can be used as the input end of the bidirectional step-up and step-down DC solid-state transformer 100, and the second connection end 102 can be used as the output end of the bi-directional step-up and step-down DC solid-state transformer 100 to convert the electrical energy from the first DC power supply to transmitted to the second DC power supply.

For example, the first connection terminal 101 can be used as the output terminal of the bidirectional step-up and step-down DC solid-state transformer 100, and the second connection terminal 102 can be used as the input terminal of the bi-directional step-up and step-down DC solid-state transformer 100 to transmit the power of the second DC power supply. Give the first DC power.

The bidirectional step-up and step-down DC solid-state transformer 100 includes a first semiconductor component 103 and a second semiconductor component 104, wherein the first semiconductor component 103 is connected to the first connection terminal 101, and the second semiconductor component 104 is connected to the second connection terminal 102.

It should be noted that when the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the bidirectional step-up and step-down DC solid-state transformer 100 needs to reduce the voltage of the first DC power supply and adjust the voltage of the second DC power supply through the first semiconductor component 103 . The voltage reduction coefficient between the DC power supply and the second DC power supply. When the voltage of the first DC power supply is smaller than the voltage of the second DC power supply, the bidirectional step-up and step-down DC solid-state transformer 100 needs to boost the first DC power supply. The voltage is adjusted through the second semiconductor component 104 to adjust the voltage boost coefficient between the first DC power supply and the second DC power supply, where the voltage step-down coefficient is the voltage-reducing coefficient in the bidirectional step-up and step-down DC solid-state transformer 100, and the step-up factor is the coefficient for boosting the voltage in the bidirectional step-up and step-down DC solid-state transformer 100 .

For example, when the voltage of the first DC power supply is 1000 volts and the voltage of the second DC power supply is 800 volts, the voltage step-down coefficient of the bidirectional step-up and step-down DC solid-state transformer 100 is 0.8.

For example, when the voltage of the first DC power supply is 1000 volts and the voltage of the second DC power supply is 1200 volts, the voltage boosting coefficient of the bidirectional step-up and step-down DC solid-state transformer 100 is 1.2.

Exemplarily, the first semiconductor component 103 and the second semiconductor component 104 may be embodied as semiconductor components including insulated gate bipolar transistors.

The bidirectional step-up and step-down DC solid-state transformer 100 also includes an inductor component 105. The inductor component 105 is connected to the first semiconductor component 103 and the second semiconductor component 104 respectively, wherein the inductor component 105 stores the electrical energy of the first DC power supply or the second DC power supply. .

For example, the inductor component 105 may specifically include multiple inductors.

The bidirectional step-up and step-down DC solid-state transformer 100 in this embodiment includes a first semiconductor component 103 and a second semiconductor component 104. When the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first semiconductor component 103 Adjust the voltage reduction coefficient between the first DC power supply and the second DC power supply. When the voltage of the first DC power supply is less than the voltage of the second DC power supply, adjust the first DC power supply through the second semiconductor component 104 and the second DC power supply, greatly improving the adjustment efficiency of the transformation coefficient in the bidirectional step-up and step-down DC solid-state transformer 100, thereby improving the transformation efficiency of the bi-directional step-up and step-down DC solid-state transformer 100, while achieving The bidirectional step-up and step-down DC solid-state transformer is provided, and the application range of the bi-directional step-up and step-down DC solid-state transformer 100 is expanded.

In some embodiments, optionally, a bidirectional step-up and step-down DC solid-state transformer 100 is proposed. The first semiconductor component 103 includes a first semiconductor device 1031 and a second semiconductor device 1032. The step-down coefficient is according to the first semiconductor device. The coefficient determined by the ratio of the duration of the on-state and off-state of 1031 to the on-off state of the second semiconductor device 1032; when the first semiconductor device 1031 is in the on-state and the second semiconductor device 1032 is in the off-state, The first semiconductor component 103 is used to connect the first connection terminal 101 and the second connection terminal 102; when the first semiconductor device 1031 is in the disconnected state, the second semiconductor device 1032 is in the conductive state, and the first semiconductor component 103 is used to connect the first connection terminal 101 and the second connection terminal 102. To connect the second semiconductor device 1032 and the second connection terminal 102;

The second semiconductor component 104 includes a third semiconductor device 1041 and a fourth semiconductor device 1042. The voltage boosting coefficient is determined based on the ratio of the duration of the third semiconductor device 1041 being in the on state and the off state and the on-off state of the fourth semiconductor device 1042. coefficient; when the third semiconductor device 1041 is in the on state and the fourth semiconductor device 1042 is in the off state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the third semiconductor device 1041; in the third When the semiconductor device 1041 is in the off state, the fourth semiconductor device 1042 is in the on state, and the second semiconductor component 104 is used to connect the first connection terminal 101 and the second connection terminal 102 .

In this embodiment, the first semiconductor component 103 includes a first semiconductor device 1031 and a second semiconductor device 1032. The bidirectional step-up and step-down DC solid-state transformer 100 adjusts the ratio of the time the first semiconductor device 1031 is in the on state and the off state. The voltage reduction coefficient is determined with the on-off state of the second semiconductor device 1032 .

For example, when the voltage reduction coefficient needs to be reduced, the time period during which the first semiconductor device 1031 is in the on state can be shortened, that is, the ratio of the time period during which the first semiconductor device 1031 is in the on state and the off state can be reduced.

In addition, it should be noted that the first semiconductor device 1031 and the second semiconductor device 1032 are devices that can be controlled on and off, and the state switching time of the first semiconductor device 1031 and the second semiconductor device 1032 is relatively fast, thus ensuring bidirectional rise and fall. Regarding the state switching speed of the DC solid-state transformer 100, for example, the state switching duration of the first semiconductor device 1031 and the second semiconductor device 1032 may be specifically 5 ms to 10 ms.

Specifically, when the first semiconductor device 1031 is in the on state and the second semiconductor device 1032 is in the off state, the first semiconductor component 103 is used to connect the first connection terminal 101 and the second connection terminal 102. When one semiconductor device 1031 is in the off state, the second semiconductor device 1032 is in the on state, and the first semiconductor component 103 is used to connect the second semiconductor device 1032 and the second connection terminal 102 .

For example, the second semiconductor device 1032 may include a diode device through which the second semiconductor device 1032 is in a conductive state when the first semiconductor device 1031 is in an off state.

The second semiconductor component 104 includes a third semiconductor device 1041 and a fourth semiconductor device 1042. The bidirectional step-up and step-down DC solid-state transformer 100 adjusts the time ratio between the third semiconductor device 1041 in the on state and the off state and the fourth semiconductor device 1042. The on-off state determines the boost coefficient.

For example, when the boost coefficient needs to be reduced, the time period during which the third semiconductor device 1041 is in the on state can be shortened, that is, the ratio of the time period during which the third semiconductor device 1041 is in the on state and the off state can be reduced.

In addition, it should be noted that the third semiconductor device 1041 and the fourth semiconductor device 1042 are devices that can control on and off, and the state switching time of the third semiconductor device 1041 and the fourth semiconductor device 1042 is relatively fast, thus ensuring bidirectional rise and fall. Regarding the state switching speed of the DC solid-state transformer 100, for example, the state switching duration of the third semiconductor device 1041 and the fourth semiconductor device 1042 may be specifically 5 ms to 10 ms.

Specifically, when the third semiconductor device 1041 is in the on state and the fourth semiconductor device 1042 is in the off state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the third semiconductor device 1041. When the third semiconductor device 1041 is in the off state, the fourth semiconductor device 1042 is in the on state, and the second semiconductor component 104 is used to connect the first connection terminal 101 and the second connection terminal 102 .

For example, the fourth semiconductor device 1042 may include a diode device through which the fourth semiconductor device 1042 is in a conductive state when the third semiconductor device 1041 is in an off state.

For example, when the first semiconductor device 1031 and the third semiconductor device 1041 are in a conductive state and the fourth semiconductor device 1042 is in a disconnected state, the second semiconductor component 104 is used to connect the first connection terminal 101 and the third semiconductor device 1041 . Semiconductor device 1041, when the first semiconductor device 1031 is in a conductive state and the third semiconductor device 1041 is in a disconnected state, the fourth semiconductor device 1042 is in a conductive state, and the second semiconductor component 104 is used to connect the first connection terminal 101 and the second connection end 102.

In this embodiment, the first semiconductor component 103 of the bidirectional step-up and step-down DC solid-state transformer 100 includes a first semiconductor device 1031 and a second semiconductor device 1032. The bi-directional step-up and step-down DC solid-state transformer 100 is turned on by adjusting the first semiconductor device 1031. The ratio of the duration between the state and the off state and the on-off state of the second semiconductor device 1032 determine the voltage reduction coefficient. The second semiconductor component 104 includes a third semiconductor device 1041 and a fourth semiconductor device 1042. The bidirectional step-up and step-down DC solid-state transformer 100 passes Adjusting the ratio of the duration between the on-state and off-state of the third semiconductor device 1041 and the on-off state of the fourth semiconductor device 1042 determines the boost coefficient, which improves the adjustment efficiency of the transformation coefficient in the bidirectional step-up and step-down DC solid-state transformer 100. This further improves the voltage transformation efficiency of the bidirectional step-up and step-down DC solid-state transformer 100 .

In some embodiments, optionally, a bidirectional buck-boost DC solid-state transformer 100 is proposed. The first semiconductor device 1031 includes a first insulated gate transistor 1033, a second insulated gate transistor 1034, a first diode 1035 and The second diode 1036, the collector of the first insulated gate transistor 1033 is connected to the anode of the first connection terminal 101, the emitter of the second insulated gate transistor 1034 is connected to the cathode of the first connection terminal 101, the first diode 1035 and the first insulated gate transistor 1033 are connected in anti-parallel, and the second diode 1036 and the second insulated gate transistor 1034 are connected in anti-parallel;

The second semiconductor device 1032 includes a third insulated gate transistor 1037 , a fourth insulated gate transistor 1038 , a third diode 1039 and a fourth diode 1040 , a collector of the third insulated gate transistor 1037 and the first insulated gate transistor 1033 The emitter of the fourth insulated gate transistor 1038 is connected to the collector of the second insulated gate transistor 1034. The emitter of the third insulated gate transistor 1037 is connected to the collector of the fourth insulated gate transistor 1038. The diode 1039 and the third insulated gate transistor 1037 are connected in anti-parallel, and the fourth diode 1040 and the fourth insulated gate transistor 1038 are connected in anti-parallel.

In this embodiment, the first semiconductor device 1031 includes a first insulated gate transistor 1033, a second insulated gate transistor 1034, a first diode 1035 and a second diode 1036. The collector of the first insulated gate transistor 1033 and The anode of the first connection terminal 101 is connected, the emitter of the second insulated gate transistor 1034 is connected to the cathode of the first connection terminal 101, the anode of the first diode 1035 is connected to the emitter of the first insulated gate transistor 1033, the first The cathode of the diode 1035 is connected to the collector of the first insulated gate transistor 1033, the anode of the second diode 1036 is connected to the collector of the second insulated gate transistor 1034, and the cathode of the second diode 1036 is connected to the second insulated gate transistor 1034. The collector of gate transistor 1034 is connected.

The second semiconductor device 1032 includes a third insulated gate transistor 1037 , a fourth insulated gate transistor 1038 , a third diode 1039 and a fourth diode 1040 , a collector of the third insulated gate transistor 1037 and the first insulated gate transistor 1033 The emitter of the fourth insulated gate transistor 1038 is connected to the collector of the second insulated gate transistor 1034. The emitter of the third insulated gate transistor 1037 is connected to the collector of the fourth insulated gate transistor 1038. The anode of the diode 1039 is connected to the emitter of the third insulated gate transistor 1037, the cathode of the third diode 1039 is connected to the collector of the third insulated gate transistor 1037, and the anode of the fourth diode 1040 is connected to the fourth insulated gate. The collector of the transistor 1038 is connected, and the cathode of the fourth diode 1040 is connected to the collector of the fourth insulated gate transistor 1038 .

Exemplarily, the first semiconductor component 103 further includes a first capacitor 1061 and a second capacitor 1062. One end of the first capacitor 1061 is connected to the anode of the first connection end 101, and the other end of the first capacitor 1061 is connected to the anode of the second capacitor 1062. One end is connected, and the other end of the second capacitor 1062 is connected to the cathode of the first connection end 101. The first capacitor 1061 and the second capacitor 1062 are used for voltage stabilization and filtering.

The first semiconductor device 1031 in the bidirectional buck-boost DC solid-state transformer 100 in this embodiment includes a first insulated gate transistor 1033, a second insulated gate transistor 1034, a first diode 1035 and a second diode 1036. The semiconductor device 1032 includes a third insulated gate transistor 1037, a fourth insulated gate transistor 1038, a third diode 1039 and a fourth diode 1040. The first semiconductor device 1031 and the second semiconductor device 1032 realize bidirectional voltage boosting and buckling. The bidirectional step-up and step-down DC solid-state transformer 100 enriches the application scenarios of the bi-directional step-up and step-down DC solid-state transformer 100 .

In some embodiments, optionally, a bidirectional buck-boost DC solid-state transformer 100 is proposed, and the third semiconductor device 1041 includes a fifth insulated gate transistor 1043, a sixth insulated gate transistor 1044, a fifth diode 1045 and The sixth diode 1046, the emitter of the fifth insulated gate transistor 1043 and the collector of the sixth insulated gate transistor 1044 are connected, the fifth diode 1045 and the fifth insulated gate transistor 1043 are connected in anti-parallel, the sixth diode 1046 and the sixth insulated gate transistor 1044 are connected in anti-parallel;

The fourth semiconductor device 1042 includes a seventh insulated gate transistor 1047, an eighth insulated gate transistor 1048, a seventh diode 1049 and an eighth diode 1050. The collector of the seventh insulated gate transistor 1047 and the second connection terminal 102 The anode is connected, the emitter of the seventh insulated gate transistor 1047 is connected to the collector of the fifth insulated gate transistor 1043, the emitter of the eighth insulated gate transistor 1048 is connected to the cathode of the second connection terminal 102, and the eighth insulated gate transistor 1048 is connected to the anode. The collector is connected to the emitter of the seventh insulated gate transistor 1047, the seventh diode 1049 and the seventh insulated gate transistor 1047 are connected in anti-parallel, and the eighth diode 1050 and the eighth insulated gate transistor 1048 are connected in anti-parallel.

In this embodiment, the third semiconductor device 1041 includes a fifth insulated gate transistor 1043, a sixth insulated gate transistor 1044, a fifth diode 1045 and a sixth diode 1046. The emitter of the fifth insulated gate transistor 1043 and The collector of the sixth insulated gate transistor 1044 is connected, the anode of the fifth diode 1045 is connected to the emitter of the fifth insulated gate transistor 1043, and the cathode of the fifth diode 1045 is connected to the collector of the fifth insulated gate transistor 1043. , the anode of the sixth diode 1046 is connected to the emitter of the sixth insulated gate transistor 1044 , and the cathode of the sixth diode 1046 is connected to the collector of the sixth insulated gate transistor 1044 .

The fourth semiconductor device 1042 includes a seventh insulated gate transistor 1047, an eighth insulated gate transistor 1048, a seventh diode 1049 and an eighth diode 1050. The collector of the seventh insulated gate transistor 1047 and the second connection terminal 102 The anode is connected, the emitter of the seventh insulated gate transistor 1047 is connected to the collector of the fifth insulated gate transistor 1043, the emitter of the eighth insulated gate transistor 1048 is connected to the cathode of the second connection terminal 102, and the eighth insulated gate transistor 1048 is connected to the anode. The collector is connected to the emitter of the seventh insulated gate transistor 1047, the anode of the seventh diode 1049 is connected to the emitter of the seventh insulated gate transistor 1047, and the cathode of the seventh diode 1049 is connected to the emitter of the seventh insulated gate transistor 1047. The collector is connected, the anode of the eighth diode 1050 is connected to the emitter of the eighth insulated gate transistor 1048 , and the cathode of the eighth diode 1050 is connected to the collector of the eighth insulated gate transistor 1048 .

Exemplarily, the second semiconductor component 104 further includes a third capacitor 1063 and a fourth capacitor 1064. One end of the third capacitor 1063 is connected to the anode of the second connection end 102, and the other end of the third capacitor 1063 is connected to the anode of the fourth capacitor 1064. One end is connected, and the other end of the fourth capacitor 1064 is connected to the cathode of the second connection end 102. The third capacitor 1063 and the fourth capacitor 1064 are used for voltage stabilization and filtering.

Exemplarily, the inductor component 105 may include a first inductor 1051 and a second inductor 1052. One end of the first inductor 1051 is connected to the emitter of the first insulated gate transistor 1033, and the other end of the first inductor 1051 is connected to the seventh insulated gate transistor. The emitter of 1047 is connected, one end of the second inductor 1052 is connected to the emitter of the second insulated gate transistor 1034, and the other end of the second inductor 1052 is connected to the emitter of the eighth insulated gate transistor 1048.

Exemplarily, the first insulated gate transistor 1033 and the third insulated gate transistor 1037 form the first IGBT module. When the first insulated gate transistor 1033 is in the on state, the third insulated gate transistor 1037 is in the off state. When the first insulated gate transistor 1033 is in the off state, the third insulated gate transistor 1037 is in the on state.

Exemplarily, the second insulated gate transistor 1034 and the fourth insulated gate transistor 1038 form a second IGBT module. When the second insulated gate transistor 1034 is in the on state, the fourth insulated gate transistor 1038 is in the off state. When the second insulated gate transistor 1034 is in the off state, the fourth insulated gate transistor 1038 is in the on state.

Exemplarily, the fifth insulated gate transistor 1043 and the seventh insulated gate transistor 1047 form a third IGBT module. When the fifth insulated gate transistor 1043 is in the on state, the seventh insulated gate transistor 1047 is in the off state. When the fifth insulated gate transistor 1043 is in the off state, the seventh insulated gate transistor 1047 is in the on state.

Exemplarily, the sixth insulated gate transistor 1044 and the eighth insulated gate transistor 1048 form a fourth IGBT module. When the sixth insulated gate transistor 1044 is in the on state, the eighth insulated gate transistor 1048 is in the off state. When the sixth insulated gate transistor 1044 is in the off state, the eighth insulated gate transistor 1048 is in the on state.

Exemplarily, the voltage reduction process of the bidirectional buck-boost DC solid-state transformer 100 includes the following two states. The first state, as shown in FIG. 2 , is when the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on. , the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are connected to the first inductor 1051, the second inductor 1052, the first capacitor 1061, the second capacitor 1062, the third capacitor 1063, the fourth capacitor 1064, the seventh The diode 1049 and the eighth diode 1050 form a path. In the second state, as shown in FIG. 3 , when the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are disconnected, the third diode 1039 , the fourth diode 1040, the first inductor 1051, the second inductor 1052, the third capacitor 1063, the fourth capacitor 1064, the seventh diode 1049 and the eighth diode 1050 form a path, and the second semiconductor device 1032 The voltage at the terminal U _mid =U _in ×α, α is the voltage reduction coefficient, 0≤α≤1, and U _in is the input voltage.

Exemplarily, the voltage reduction process of the bidirectional buck-boost DC solid-state transformer 100 includes the following two states. In the first state, as shown in FIG. 4, the first insulated gate transistor 1033, the second insulated gate transistor 1034, the fifth insulated gate When the gate transistor 1043 and the sixth insulated gate transistor 1044 are turned on, the first insulated gate transistor 1033, the second insulated gate transistor 1034, the fifth insulated gate transistor 1043 and the sixth insulated gate transistor 1044 are connected with the first inductor 1051 and the sixth insulated gate transistor 1044. The two inductors 1052, the first capacitor 1061, and the second capacitor 1062 form a path. In the second state, as shown in FIG. 5, when the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on, the first insulated gate transistor 1033 and the second insulated gate transistor 1034 are turned on. The transistor 1033 and the second insulated gate transistor 1034 are connected to the first inductor 1051, the second inductor 1052, the first capacitor 1061, the second capacitor 1062, the third capacitor 1063, the fourth capacitor 1064, the seventh diode 1049, and the The eight diodes 1050 form a path, and the output voltage of the bidirectional step-up and step-down DC solid-state transformer 100 is U _out =U _mid ×β, β is the boost coefficient, β≥1, and U _mid is the voltage across the second semiconductor device 1032 .

Illustratively, the output voltage U _out of the bidirectional step-up and step-down DC solid-state transformer 100 =U _in ×α×β, α is the step-down coefficient, β is the step-up coefficient, and U _in is the input of the bi-directional step-up and step-down DC solid-state transformer 100 Voltage.

The third semiconductor device in the bidirectional buck-boost DC solid-state transformer 100 in this embodiment includes a fifth insulated gate transistor 1043, a sixth insulated gate transistor 1044, a fifth diode 1045 and a sixth diode 1046. The fourth semiconductor device The device includes a seventh insulated gate transistor 1047, an eighth insulated gate transistor 1048, a seventh diode 1049 and an eighth diode 1050. The third semiconductor device 1041 and the fourth semiconductor device 1042 realize a bidirectional step-up and step-down DC solid-state The bidirectional step-up and step-down operation of the transformer 100 enriches the application scenarios of the bi-directional step-up and step-down DC solid-state transformer 100 .

The execution subject of the technical solution of the control method of the bidirectional step-up and step-down DC solid-state transformer provided by the present invention can be a control device, and can also be determined according to actual use requirements, and is not specifically limited here. In order to describe more clearly the control method of the bidirectional step-up and step-down DC solid-state transformer provided by the present invention, the following description takes the control device as the execution subject.

As shown in Figure 6, an embodiment of the present invention provides a control method for a bidirectional step-up and step-down DC solid-state transformer. The control method for a bi-directional step-up and step-down DC solid-state transformer includes:

Step 602: Obtain the first transformation coefficient between the first DC power supply and the second DC power supply;

Step 604: Obtain the first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the bidirectional step-up and step-down DC solid-state transformer;

Step 606: Adjust the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

In this embodiment, a control method for a bidirectional step-up and step-down DC solid-state transformer is provided, wherein the bi-directional step-up and step-down DC solid-state transformer is the bi-directional step-up and step-down DC solid-state transformer in the above embodiment, and the bi-directional step-up and step-down DC solid-state transformer is The transformer is used in the energy storage system. The energy storage system is an electrical energy storage system including a first DC power supply, a second DC power supply and a bidirectional step-up and step-down DC solid-state transformer. The two-way step-up and step-down DC solid-state transformer is connected to the first DC power supply respectively. Connect to the second DC power supply.

For example, the energy storage system may be specifically a new energy power energy storage system.

The control device obtains the first transformation coefficient between the first DC power supply and the second DC power supply, and obtains the first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the bidirectional step-up and step-down DC solid-state transformer, Wherein, the first transformation coefficient is a coefficient determined based on the ratio of the voltage of the first DC power supply and the voltage of the second DC power supply, the first temperature is the real-time temperature of the first semiconductor component, and the second temperature is the temperature of the second semiconductor component. real time temperature.

For example, when the first DC power supply is the input power supply and the second DC power supply is the output power supply, and the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first voltage transformation coefficient is the voltage step-down coefficient. , when the voltage of the first DC power supply is smaller than the voltage of the second DC power supply, the first transformation coefficient is the voltage boost coefficient.

The control device adjusts the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer to the first voltage transformation coefficient according to the first temperature and the second temperature, where the second transformation coefficient is Transformation coefficient.

It should be noted that the first semiconductor component and the second semiconductor component will generate heat during operation, thereby increasing the temperature. However, excessive temperature will affect the operating performance of the bidirectional step-up and step-down DC solid-state transformer. By adjusting the first semiconductor component and the The conduction time of the second semiconductor component can reduce the first temperature of the first semiconductor component and the second temperature of the second semiconductor component, ensuring the operating performance of the bidirectional step-up and step-down DC solid-state transformer.

The control method of the bidirectional step-up and step-down DC solid-state transformer in this embodiment adjusts the second transformation coefficient of the bi-directional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, ensuring that the bi-directional step-up and step-down DC solid-state transformer is controlled. The operational performance of the step-down DC solid-state transformer expands the application scope of the bidirectional step-up and step-down DC solid-state transformer.

In some embodiments, optionally, as shown in Figure 7, the control method of the bidirectional step-up and step-down DC solid-state transformer includes:

Step 702: Obtain the first transformation coefficient between the first DC power supply and the second DC power supply;

Step 704: Obtain the first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the bidirectional step-up and step-down DC solid-state transformer;

Step 706: When the first temperature is greater than the second temperature, reduce the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer so that the second transformation coefficient is equal to the first transformation coefficient;

Step 708: When the first temperature is lower than the second temperature, increase the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer so that the second transformation coefficient is equal to the first transformation coefficient.

In this embodiment, when the first temperature is greater than the second temperature, the control device reduces the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer by reducing the conduction time proportion of the first semiconductor component, so that The second transformation coefficient is equal to the first transformation coefficient.

When the first temperature is lower than the second temperature, the control device increases the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer by increasing the conduction time ratio of the second semiconductor component, so that the second transformation coefficient is equal to The first transformation coefficient.

For example, when the first temperature is equal to the second temperature, it means that the second transformation coefficient is equal to the first transformation coefficient.

The control method of the bidirectional step-up and step-down DC solid-state transformer in this embodiment reduces the proportion of the conduction time of the first semiconductor component when the first temperature is greater than the second temperature. The second transformation coefficient is such that the second transformation coefficient is equal to the first transformation coefficient. When the first temperature is lower than the second temperature, the bidirectional step-up and step-down DC is improved by increasing the conduction time proportion of the second semiconductor component. The second transformation coefficient of the solid-state transformer is such that the second transformation coefficient is equal to the first transformation coefficient, ensuring the accuracy of the second transformation coefficient in the bidirectional step-up and step-down DC solid-state transformer, thereby ensuring the bidirectional step-up and step-down DC Solid state transformer works properly.

In some embodiments, optionally, as shown in Figure 8, the control method of the bidirectional step-up and step-down DC solid-state transformer includes:

Step 802: Obtain the first transformation coefficient between the first DC power supply and the second DC power supply;

Step 804: Obtain the first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the bidirectional step-up and step-down DC solid-state transformer;

Step 806: Adjust the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature;

Step 808: Control the bidirectional step-up and step-down DC solid-state transformer to receive electric energy from the first DC power supply and transmit the electric energy from the first DC power supply to the second DC power supply.

In this embodiment, when the first DC power supply is the input power supply, the control device controls the bidirectional step-up and step-down DC solid-state transformer to receive the power of the first DC power supply and transmit the power of the first DC power supply to the second power supply. DC power supply.

For example, when the second DC power supply is the input power supply, the control device controls the bidirectional step-up and step-down DC solid-state transformer to receive the power from the second DC power supply and transmit the power from the second DC power supply to the first DC power supply.

The control method of the bidirectional step-up and step-down DC solid-state transformer in this embodiment controls the bi-directional step-up and step-down DC solid-state transformer to receive the electric energy of the first DC power supply and transmit the electric energy of the first DC power supply to the second DC power supply, ensuring storage The power transmission between various power sources within the energy system improves the power transmission efficiency of the energy storage system.

As shown in Figure 9, an embodiment of the present invention provides a control device 900 for a bidirectional step-up and step-down DC solid-state transformer. The control device 900 for a bi-directional step-up and step-down DC solid-state transformer includes:

Obtaining module 902 is used to obtain the first transformation coefficient between the first DC power supply and the second DC power supply;

The acquisition module 902 is also used to acquire the first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the bidirectional step-up and step-down DC solid-state transformer;

The control module 904 is configured to adjust the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

In this embodiment, a control device 900 for a bidirectional step-up and step-down DC solid-state transformer is provided, wherein the bi-directional step-up and step-down DC solid-state transformer is the bi-directional step-up and step-down DC solid-state transformer in the above embodiment, and the bi-directional step-up and step-down DC solid-state transformer is Solid-state transformers are used in energy storage systems. The energy storage system is an electrical energy storage system including a first DC power supply, a second DC power supply and a bidirectional step-up and step-down DC solid-state transformer. The bi-directional step-up and step-down DC solid-state transformer is connected to the first DC power supply respectively. mains and second DC power connections.

For example, the energy storage system may be specifically a new energy power energy storage system.

The obtaining module 902 obtains the first transformation coefficient between the first DC power supply and the second DC power supply, and obtains the first temperature of the first semiconductor component and the second temperature of the second semiconductor component in the bidirectional step-up and step-down DC solid-state transformer. , where the first transformation coefficient is a coefficient determined based on the ratio of the voltage of the first DC power supply to the voltage of the second DC power supply, the first temperature is the real-time temperature of the first semiconductor component, and the second temperature is the real-time temperature of the second semiconductor component real-time temperature.

For example, when the first DC power supply is the input power supply and the second DC power supply is the output power supply, and the voltage of the first DC power supply is greater than the voltage of the second DC power supply, the first voltage transformation coefficient is the voltage step-down coefficient. , when the voltage of the first DC power supply is smaller than the voltage of the second DC power supply, the first transformation coefficient is the voltage boost coefficient.

The control module 904 adjusts the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, where the second transformation coefficient is transformation coefficient.

It should be noted that the first semiconductor component and the second semiconductor component will generate heat during operation, thereby increasing the temperature. However, excessive temperature will affect the operating performance of the bidirectional step-up and step-down DC solid-state transformer. By adjusting the first semiconductor component and the The conduction time of the second semiconductor component can reduce the first temperature of the first semiconductor component and the second temperature of the second semiconductor component, ensuring the operating performance of the bidirectional step-up and step-down DC solid-state transformer.

The control device 900 of the bidirectional step-up and step-down DC solid-state transformer in this embodiment adjusts the second transformation coefficient of the bi-directional step-up and step-down DC solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature, ensuring that the bidirectional step-up and step-down DC solid-state transformer is The operating performance of the step-up and step-down DC solid-state transformer expands the application scope of the bidirectional step-up and step-down DC solid-state transformer.

In some embodiments, optionally, the control device 900 of the bidirectional step-up and step-down DC solid-state transformer further includes:

The control module 904 is configured to reduce the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer when the first temperature is greater than the second temperature, so that the second transformation coefficient is equal to the first transformation coefficient;

The control module 904 is configured to increase the second transformation coefficient of the bidirectional step-up and step-down DC solid-state transformer when the first temperature is lower than the second temperature, so that the second transformation coefficient is equal to the first transformation coefficient.

For example, as shown in Figure 10, the bidirectional step-up and step-down DC solid-state transformer includes a left IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and a right IGBT. The control module 904 determines the requirements of the bi-directional step-up and step-down DC solid-state transformer. Increase and decrease the voltage coefficient, then initialize and set the voltage reduction coefficient, and calculate the voltage increase coefficient. When the temperature of the left IGBT is greater than that of the right IGBT, reduce the voltage reduction coefficient. When the temperature of the left IGBT is greater than the right IGBT, Increase the voltage reduction coefficient, and when the temperature of the left IGBT is equal to that of the right IGBT, wait for the bidirectional step-up and step-down DC solid-state transformer to continue working.

In this embodiment, the control device 900 of the bidirectional step-up and step-down DC solid-state transformer reduces the power consumption of the bi-directional step-up and step-down DC solid-state transformer by reducing the proportion of the conduction time of the first semiconductor component when the first temperature is greater than the second temperature. The second transformation coefficient is such that the second transformation coefficient is equal to the first transformation coefficient. When the first temperature is lower than the second temperature, the bidirectional step-up and step-down voltage is improved by increasing the conduction time proportion of the second semiconductor component. The second transformation coefficient of the DC solid-state transformer is such that the second transformation coefficient is equal to the first transformation coefficient, ensuring the accuracy of the second transformation coefficient in the bidirectional step-up and step-down DC solid-state transformer, thereby ensuring the bidirectional step-up and step-down voltage Normal operation of DC solid state transformer.

In some embodiments, optionally, the control device 900 of the bidirectional step-up and step-down DC solid-state transformer further includes:

The control module 904 is used to control the bidirectional step-up and step-down DC solid-state transformer to receive the power of the first DC power supply and transmit the power of the first DC power supply to the second DC power supply.

The control device 900 of the bidirectional step-up and step-down DC solid-state transformer in this embodiment controls the bi-directional step-up and step-down DC solid-state transformer to receive the power of the first DC power supply and transmit the power of the first DC power supply to the second DC power supply, ensuring that The power transmission between various power sources within the energy storage system improves the power transmission efficiency of the energy storage system.

In some embodiments, optionally, as shown in Figure 11, a control device 1100 for a bidirectional step-up and step-down DC solid-state transformer is proposed, including a processor 1102 and a memory 1104. The memory 1104 stores a program or instructions. The program Or when the instructions are executed by the processor 1102, the steps of the control method of the bidirectional step-up and step-down DC solid-state transformer in any of the above technical solutions are implemented. Therefore, the control device 1100 for a bidirectional step-up and step-down DC solid-state transformer has all the beneficial effects of the control method for a bi-directional step-up and step-down DC solid-state transformer in any of the above technical solutions, and will not be described again here.

In some embodiments, optionally, a readable storage medium is provided with a program stored thereon. When the program is executed by the processor, the control method of the bidirectional step-up and step-down DC solid-state transformer in any of the above embodiments is implemented. , thus having all the beneficial technical effects of the control method of the bidirectional step-up and step-down DC solid-state transformer in any of the above embodiments.

Among them, readable storage media, such as read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk, etc.

It should be noted that in the claims, description and drawings of the present invention, the term "plurality" refers to two or more, unless there is additional explicit limitation, the terms "upper", "lower", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the purpose of describing the present invention more conveniently and making the description process simpler, and is not intended to indicate or imply that the device or element referred to must have the described characteristics. A specific orientation, construction and operation in a specific orientation, therefore these descriptions cannot be understood as limitations of the invention; the terms "connection", "installation", "fixing", etc. should be understood broadly. For example, "connection" can be A fixed connection between multiple objects can also be a detachable connection between multiple objects, or an integral connection; it can be a direct connection between multiple objects, or it can be an intermediate connection between multiple objects. indirectly connected. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood based on the specific conditions of the above data.

In the claims, description and drawings of the present invention, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means the specific features, structures described in connection with the embodiment or example , materials or features are included in at least one embodiment or example of the invention. In the claims, description and drawings of the present invention, schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.

Claims (10)

1. A bi-directional buck-boost dc solid state transformer for voltage conversion between a first dc power source and a second dc power source, the bi-directional buck-boost dc solid state transformer comprising:

The first connecting end is used for being connected with the first direct current power supply, and the second connecting end is used for being connected with the second direct current power supply;

the first semiconductor component is connected with the first connecting end;

the first semiconductor component is used for adjusting the step-down coefficient between the first direct current power supply and the second direct current power supply under the condition that the voltage of the first direct current power supply is larger than that of the second direct current power supply;

a second semiconductor component connected to the second connection terminal;

the second semiconductor component is used for adjusting the boosting coefficient between the first direct current power supply and the second direct current power supply under the condition that the voltage of the first direct current power supply is smaller than that of the second direct current power supply;

the inductance component is respectively connected with the first semiconductor component and the second semiconductor component, and the inductance component stores electric energy of the first direct current power supply or the second direct current power supply.

2. The bi-directional buck-boost direct current solid state transformer of claim 1,

The first semiconductor component comprises a first semiconductor device and a second semiconductor device, and the step-down coefficient is a coefficient determined according to the ratio of the duration of the first semiconductor device in a conducting state and a disconnecting state and the on-off state of the second semiconductor device; the first semiconductor component is used for communicating the first connection end and the second connection end when the first semiconductor device is in a conducting state and the second semiconductor device is in a disconnecting state; the second semiconductor device is in a conducting state under the condition that the first semiconductor device is in an off state, and the first semiconductor component is used for communicating the second semiconductor device with the second connecting end; and/or

The second semiconductor component comprises a third semiconductor device and a fourth semiconductor device, and the boosting coefficient is a coefficient determined according to the ratio of the duration of the third semiconductor device in an on state and an off state and the on-off state of the fourth semiconductor device; the second semiconductor component is used for communicating the first connection end and the third semiconductor device when the third semiconductor device is in a conducting state and the fourth semiconductor device is in an disconnecting state; and in the case that the third semiconductor device is in an off state, the fourth semiconductor device is in an on state, and the second semiconductor component is used for communicating the first connection terminal and the second connection terminal.

3. The bi-directional buck-boost direct current solid state transformer of claim 2,

the first semiconductor device comprises a first insulated gate transistor, a second insulated gate transistor, a first diode and a second diode, wherein a collector of the first insulated gate transistor is connected with an anode of the first connecting end, an emitter of the second insulated gate transistor is connected with a cathode of the first connecting end, the first diode is connected with the first insulated gate transistor in anti-parallel, and the second diode is connected with the second insulated gate transistor in anti-parallel;

the second semiconductor device comprises a third insulated gate transistor, a fourth insulated gate transistor, a third diode and a fourth diode, wherein the collector of the third insulated gate transistor is connected with the emitter of the first insulated gate transistor, the emitter of the fourth insulated gate transistor is connected with the collector of the second insulated gate transistor, the emitter of the third insulated gate transistor is connected with the collector of the fourth insulated gate transistor, the third diode is connected with the third insulated gate transistor in anti-parallel mode, and the fourth diode is connected with the fourth insulated gate transistor in anti-parallel mode.

4. The bi-directional buck-boost direct current solid state transformer of claim 2,

the third semiconductor device comprises a fifth insulated gate transistor, a sixth insulated gate transistor, a fifth diode and a sixth diode, wherein an emitter of the fifth insulated gate transistor is connected with a collector of the sixth insulated gate transistor, the fifth diode is connected with the fifth insulated gate transistor in anti-parallel, and the sixth diode is connected with the sixth insulated gate transistor in anti-parallel;

the fourth semiconductor device comprises a seventh insulated gate transistor, an eighth insulated gate transistor, a seventh diode and an eighth diode, wherein a collector of the seventh insulated gate transistor is connected with an anode of the second connection end, an emitter of the seventh insulated gate transistor is connected with a collector of the fifth insulated gate transistor, an emitter of the eighth insulated gate transistor is connected with a cathode of the second connection end, a collector of the eighth insulated gate transistor is connected with an emitter of the seventh insulated gate transistor, the seventh diode is connected with the seventh insulated gate transistor in anti-parallel, and the eighth diode is connected with the eighth insulated gate transistor in anti-parallel.

5. A control method of a bidirectional buck-boost direct current solid state transformer, characterized in that the bidirectional buck-boost direct current solid state transformer is the bidirectional buck-boost direct current solid state transformer according to any one of claims 1 to 4, the bidirectional buck-boost direct current solid state transformer is used for an energy storage system, the energy storage system comprises a first direct current power supply, a second direct current power supply and the bidirectional buck-boost direct current solid state transformer, the bidirectional buck-boost direct current solid state transformer is respectively connected with the first direct current power supply and the second direct current power supply, and the control method of the bidirectional buck-boost direct current solid state transformer comprises:

acquiring a first transformation coefficient between the first direct current power supply and the second direct current power supply;

acquiring a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in the bidirectional buck-boost direct current solid-state transformer;

and adjusting a second transformation coefficient of the bidirectional buck-boost direct current solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

6. The method of claim 5, wherein adjusting the second transformation factor of the bi-directional buck-boost dc solid state transformer to the first transformation factor according to the first temperature and the second temperature comprises:

Reducing the second transformation coefficient of the bi-directional buck-boost direct current solid state transformer when the first temperature is greater than the second temperature, such that the second transformation coefficient is equal to the first transformation coefficient;

and under the condition that the first temperature is smaller than the second temperature, the second transformation coefficient of the bidirectional buck-boost direct current solid state transformer is increased so that the second transformation coefficient is equal to the first transformation coefficient.

7. The method for controlling a bi-directional buck-boost dc solid state transformer according to claim 5 or 6, further comprising, after adjusting the second transformation factor of the bi-directional buck-boost dc solid state transformer to the first transformation factor:

and controlling the bidirectional buck-boost direct current solid-state transformer to receive the electric energy of the first direct current power supply and transmit the electric energy of the first direct current power supply to the second direct current power supply.

8. A control device of a bidirectional buck-boost direct current solid state transformer, characterized in that the bidirectional buck-boost direct current solid state transformer is the bidirectional buck-boost direct current solid state transformer according to any one of claims 1 to 4, the bidirectional buck-boost direct current solid state transformer is used for an energy storage system, the energy storage system comprises a first direct current power supply, a second direct current power supply and the bidirectional buck-boost direct current solid state transformer, the bidirectional buck-boost direct current solid state transformer is respectively connected with the first direct current power supply and the second direct current power supply, and the control device of the bidirectional buck-boost direct current solid state transformer comprises:

The acquisition module is used for acquiring a first transformation coefficient between the first direct current power supply and the second direct current power supply;

the acquisition module is further used for acquiring a first temperature of a first semiconductor component and a second temperature of a second semiconductor component in the bidirectional buck-boost direct current solid-state transformer;

and the control module is used for adjusting the second transformation coefficient of the bidirectional buck-boost direct current solid-state transformer to the first transformation coefficient according to the first temperature and the second temperature.

9. The control device of the bidirectional buck-boost direct current solid-state transformer is characterized by comprising:

a processor;

a memory in which a program or instructions are stored, the processor implementing the steps of the control method of a bi-directional buck-boost dc solid state transformer according to any one of claims 5 to 7 when the program or instructions in the memory are executed.

10. A readable storage medium, characterized in that the readable storage medium has stored thereon a program or instructions which, when executed by a processor, implement the steps of the control method of a bi-directional buck-boost direct current solid state transformer according to any one of claims 5 to 7.