CN117071062B - Silicon carbide thick epitaxial wafer for high-voltage device - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 150000001721 carbon Chemical class 0.000 claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- 239000002245 particle Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 239000011259 mixed solution Substances 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 14
- 239000012153 distilled water Substances 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011265 semifinished product Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229960005070 ascorbic acid Drugs 0.000 claims description 7
- 235000010323 ascorbic acid Nutrition 0.000 claims description 7
- 239000011668 ascorbic acid Substances 0.000 claims description 7
- 238000007731 hot pressing Methods 0.000 claims description 7
- 239000002135 nanosheet Substances 0.000 claims description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000498 ball milling Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 238000002679 ablation Methods 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000000969 carrier Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 230000008859 change Effects 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract description 2
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- 230000005012 migration Effects 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 28
- 239000000463 material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012300 argon atmosphere Substances 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
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- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02529—Silicon carbide
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Abstract
The invention discloses a silicon carbide thick epitaxial wafer for a high-voltage device, which effectively solves the problems of crystal defects and poor ablation resistance of the epitaxial wafer. By a method of coating the modified carbon film on the silicon carbide substrate, carbon vacancies of an epitaxial layer are supplemented by carbon atom migration of the carbon film in the epitaxial and annealing processes, so that the purpose of repairing the carbon vacancies is achieved, and the purpose of prolonging the service life of carriers of the silicon carbide epitaxial wafer is improved. And secondly, aluminum particles are doped in the modified carbon film to improve the ablation resistance, A l has higher melting point and larger phase change latent heat, the heat conductivity coefficient is high, the high-temperature oxidation resistance is good, the A l 2O3 formed by oxidation has the advantages of high melting point, low thermal expansion coefficient, good mechanical property, corrosion resistance and the like, can serve as a heat insulation layer and prevent oxygen from diffusing into an internal SiC layer, realizes self-healing of surface cracks, remarkably improves the ablation resistance of the silicon carbide thick epitaxial wafer, and has important significance in development of semiconductor devices.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a silicon carbide thick epitaxial wafer for a high-voltage device.
Background
The third-generation semiconductor silicon carbide material has the advantages of high heat conductivity, high breakdown field strength, high saturated electron drift rate and the like, can meet the new requirements of the modern electronic technology on severe conditions such as high temperature, high power, high voltage, high frequency, radiation resistance and the like, and is also a strategic direction of the semiconductor technology in China in the future. With the continuous popularization and development of the third-generation semiconductor materials, the semiconductor material plays a key role in industries such as power electronics, aerospace, new energy, smart power grids, electric automobiles and the like.
The light is absorbed by the surface of the semiconductor. Photon absorption produces one majority carrier and one minority carrier at a time, known as an unbalanced carrier. In many semiconductor materials, the number of photogenerated unbalanced carriers is much less than the majority carriers generated by doping that are inherently present in the material. Thus, the number of majority carriers in the semiconductor is substantially unchanged when illuminated, while minority carriers are significantly increased. Minority carrier lifetime is an important parameter of semiconductor materials and semiconductor devices, directly reflecting whether the quality of the materials and the characteristics of the devices meet the requirements.
How to improve the carrier life of the silicon carbide epitaxial wafer is a difficult problem facing the industry, and meanwhile, the damage to the surface of the epitaxial wafer caused by high-temperature annealing is also a difficult problem to be solved in the industry.
Disclosure of Invention
The invention aims to provide a silicon carbide thick epitaxial wafer for a high-voltage device, which solves the problems of short service life of carriers and poor ablation resistance of the silicon carbide epitaxial wafer in the background art.
The aim of the invention can be achieved by the following technical scheme:
a silicon carbide thick epitaxial wafer for high-voltage devices is prepared through coating modified carbon film on the surface of silicon carbide substrate, putting it in the reaction chamber of epitaxial furnace, introducing hydrogen gas, heating to 1600-1650 deg.C, introducing Si source, C source and doping source, growing buffer layer on the silicon surface of silicon carbide substrate, regulating the flow value of each source, growing epitaxial layer to a given thickness, annealing, cooling to room temp, protecting the wafer by blue film, and polishing off carbon film.
Further, the modified carbon film has a thickness of 50 μm to 500 μm.
Further, the flow rate of the hydrogen is 80-120L/min, and the pressure of the hydrogen introduced into the reaction chamber is 80-200mbar.
Further, the silicon source is selected from any one of silane, dichlorosilane and trichlorosilane.
Further, the carbon source is selected from any one of methane, ethylene and propane.
Further, the doping source is selected from any one of N 2 and trimethylaluminum.
Further, the annealing process is specifically carried out at 1500-1700 ℃ for 20-30min.
The modified carbon film is prepared by the following steps:
Step S1, placing graphene nano sheets into a beaker containing absolute ethyl alcohol, and performing ultrasonic dispersion with power of 400-420W for 1-2 hours to obtain a mixed solution a;
S2, pouring aluminum powder into a beaker containing absolute ethyl alcohol, and stirring for 50-70min at the rotating speed of 180-230rpm to obtain a mixed solution b;
step S3, mixing the mixed solution a and the mixed solution b, stirring for 50-60min at 58-60 ℃ and 1400-1500rpm, vacuum drying for 20-23h, putting the dried powder into a ball mill in argon atmosphere, ball milling for 4-5h at 600-700rpm, and finally vacuum hot-pressing and sintering to obtain prefabricated particles;
S4, dissolving ascorbic acid in distilled water, stirring uniformly at 220-250rpm, transferring to a reaction kettle, adding prefabricated particles into the reaction kettle, reacting for 6-7 hours at 200-210 ℃, centrifuging, washing the precipitate with absolute ethyl alcohol for 2-3 times, and drying to obtain a semi-finished product;
And S5, dissolving the semi-finished product in distilled water to obtain the modified carbon film.
Further, the dosage ratio of the graphene nano-sheets to the absolute ethyl alcohol in the step S1 is 2.5-3.3mg:300-400mL.
Further, the dosage ratio of the aluminum powder to the absolute ethyl alcohol in the step S2 is 13.2-14.1g:250-350mL.
Further, the condition of the vacuum hot-pressing sintering in the step S3 is that the temperature is 440-470 ℃ and the pressure is 60-70MPa.
Further, the dosage ratio of the ascorbic acid, the distilled water and the preformed particles in the step S4 is 20-25mg:20-25mL:1.3-1.5mg.
Further, the dosage ratio of the semi-finished product to distilled water in the step S5 is 10.3-14.1mg:50-70mL.
The invention has the beneficial effects that the invention aims to provide the silicon carbide thick epitaxial wafer for the high-voltage device, and the problems of crystal defects and poor ablation resistance of the epitaxial wafer are effectively solved. By a method of coating the modified carbon film on the silicon carbide substrate, carbon vacancies of an epitaxial layer are supplemented by carbon atom migration of the carbon film in the epitaxial and annealing processes, so that the purpose of repairing the carbon vacancies is achieved, and the purpose of prolonging the service life of carriers of the silicon carbide epitaxial wafer is improved.
The modified carbon film contains amorphous carbon film, carbon sphere, graphene and other carbon forms, sp 2、sp3 carbon bonds are mixed, the stability of the film is greatly improved, the film has lower internal stress and better bonding strength, and meanwhile, the excellent performances of high hardness, low friction coefficient, low wear rate and the like are reserved, so that the mechanical and thermal stability of the film is optimized.
In addition, the carbon sphere has large specific surface area, high pore structure and biocompatibility, and can efficiently adsorb a large amount of metal and nonmetal particles. In order to avoid ablation caused by excessively high temperature on the surface of the epitaxial wafer during high-temperature annealing, aluminum particles are doped to improve the ablation resistance of the epitaxial wafer, al has higher melting point and larger phase change latent heat, the heat conductivity coefficient is high, the high-temperature oxidation resistance is good, the high-temperature phase change material is better, and the oxidized Al 2O3 has the advantages of high melting point, low thermal expansion coefficient, good mechanical property, thermal shock stability, corrosion resistance and the like, can serve as a heat insulation layer and prevent oxygen from diffusing into an internal SiC layer, realizes self-healing of surface cracks, remarkably improves the ablation resistance of the silicon carbide thick epitaxial wafer, and has important significance in development of semiconductor devices.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The modified carbon film is prepared by the following steps:
step S1, 2.5mg of graphene nano-sheets are placed into a beaker containing 300mL of absolute ethyl alcohol, and ultrasonic dispersion with 400W power is carried out for 1h, so as to obtain a mixed solution a;
S2, pouring 13.2g of aluminum powder into a beaker containing 250mL of absolute ethyl alcohol, and stirring for 50min at a rotating speed of 180rpm to obtain a mixed solution b;
Step S3, mixing the mixed solution a and the mixed solution b, stirring for 50min at 58 ℃ and 1400rpm, vacuum drying for 20h, putting the dried powder into a ball mill in an argon atmosphere, ball milling for 4h at 600rpm, and finally vacuum hot-pressing sintering to obtain prefabricated particles, wherein the sintering condition is that the temperature is 440 ℃ and the pressure is 60MPa;
step S4, dissolving 20mg of ascorbic acid in 20mL of distilled water, stirring uniformly at a rotating speed of 220rpm, transferring to a reaction kettle, adding 1.3mg of prefabricated particles into the reaction kettle, reacting for 6 hours at 200 ℃, centrifuging, washing a precipitate with absolute ethyl alcohol for 2 times, and drying to obtain a semi-finished product;
Step S5, 10.3mg of the semi-finished product is dissolved in 50mL of distilled water to obtain a modified carbon film.
Example 2
The modified carbon film is prepared by the following steps:
Step S1, 2.9mg of graphene nano-sheets are placed into a beaker containing 350mL of absolute ethyl alcohol, and ultrasonic dispersion with power of 410W is carried out for 1.5 hours to obtain a mixed solution a;
S2, pouring 13.8g of aluminum powder into a beaker containing 300mL of absolute ethyl alcohol, and stirring at 200rpm for 60min to obtain a mixed solution b;
Step S3, mixing the mixed solution a and the mixed solution b, stirring for 55min at 59 ℃ and 1450rpm, vacuum drying for 21h, putting the dried powder into a ball mill in an argon atmosphere, ball milling for 4.5h at 650rpm, and finally vacuum hot-pressing and sintering to obtain prefabricated particles, wherein the sintering condition is that the temperature is 460 ℃ and the pressure is 65MPa;
S4, dissolving 23mg of ascorbic acid in 23mL of distilled water, uniformly stirring at a rotating speed of 240rpm, transferring to a reaction kettle, adding 1.4mg of prefabricated particles into the reaction kettle, reacting for 6.5 hours at 205 ℃, centrifuging, washing the precipitate with absolute ethyl alcohol for 2 times, and drying to obtain a semi-finished product;
step S5, 12.7mg of the semi-finished product is dissolved in 55mL of distilled water to obtain a modified carbon film.
Example 3
The modified carbon film is prepared by the following steps:
Step S1, placing 3.3mg graphene nano-sheets into a beaker containing 400mL of absolute ethyl alcohol, and performing ultrasonic dispersion with 420W power for 2 hours to obtain a mixed solution a;
S2, pouring 14.1g of aluminum powder into a beaker containing 350mL of absolute ethyl alcohol, and stirring at 230rpm for 70min to obtain a mixed solution b;
Step S3, mixing the mixed solution a and the mixed solution b, stirring for 60min at the speed of 60 ℃ and 1500rpm, vacuum drying for 23h, putting the dried powder into a ball mill in an argon atmosphere, ball milling for 5h at the speed of 700rpm, and finally vacuum hot-pressing and sintering to obtain prefabricated particles, wherein the sintering condition is that the temperature is 470 ℃ and the pressure is 70MPa;
Step S4, dissolving 25mg of ascorbic acid in 25mL of distilled water, stirring uniformly at a rotating speed of 250rpm, transferring to a reaction kettle, adding 1.5mg of prefabricated particles into the reaction kettle, reacting for 7 hours at 210 ℃, centrifuging, washing the precipitate with absolute ethyl alcohol for 3 times, and drying to obtain a semi-finished product;
Step S5, 14.1mg of the semi-finished product is dissolved in 70mL of distilled water to obtain a modified carbon film.
Example 4
The silicon carbide thick epitaxial wafer for the high-voltage device is prepared by coating a modified carbon film prepared in the embodiment 1 on the carbon surface of a silicon carbide substrate, wherein the thickness is 50 mu m, placing the carbon film in an epitaxial furnace reaction chamber, introducing hydrogen, wherein the flow rate of the hydrogen is 80L/min, introducing hydrogen to the reaction chamber at the pressure of 80mbar, gradually heating to 1600 ℃, introducing silane, methane and N 2, growing a buffer layer on the silicon surface of the silicon carbide substrate, adjusting the flow rate value of various sources, growing an epitaxial layer to the specified thickness, carrying out annealing at 1500 ℃, cooling to room temperature, carrying out silicon surface blue film protection on the wafer, and polishing the carbon film to obtain the silicon carbide thick epitaxial wafer for the high-voltage device.
Example 5
The silicon carbide thick epitaxial wafer for the high-voltage device is prepared by coating a modified carbon film prepared in the embodiment 2 on the carbon surface of a silicon carbide substrate, wherein the thickness is 300 mu m, placing the carbon film in an epitaxial furnace reaction chamber, introducing hydrogen gas with the flow rate of 100L/min into the reaction chamber, introducing hydrogen gas to the pressure of 150mbar, gradually heating to 1630 ℃, introducing dichlorosilane, ethylene and N 2, growing a buffer layer on the silicon surface of the silicon carbide substrate, adjusting the flow rate values of various sources, growing the epitaxial layer to the specified thickness, carrying out annealing at 1600 ℃, cooling to room temperature, carrying out silicon surface blue film protection on the wafer, and polishing the carbon film to obtain the silicon carbide thick epitaxial wafer for the high-voltage device.
Example 6
The silicon carbide thick epitaxial wafer for the high-voltage device is prepared by coating a modified carbon film prepared in the embodiment 3 on the carbon surface of a silicon carbide substrate, wherein the thickness is 500 mu m, placing the silicon carbide substrate in an epitaxial furnace reaction chamber, introducing hydrogen gas with the flow rate of 120L/min, introducing hydrogen gas to the reaction chamber at the pressure of 200mbar, gradually heating to 1650 ℃, introducing trichlorosilane, propane and trimethylaluminum, growing a buffer layer on the silicon surface of the silicon carbide substrate, adjusting the flow rate values of various sources, growing the epitaxial layer to the specified thickness, preserving the temperature for 25min, annealing, cooling to the room temperature, performing silicon surface blue film protection on the wafer, and polishing the carbon film to obtain the silicon carbide thick epitaxial wafer for the high-voltage device.
Comparative example 1
Silicon carbide thick epitaxial wafer produced by Nanjing Xianfeng nano material technology Co.
Comparative example 2
The method for producing the silicon carbide thick epitaxial wafer of comparative example 2 was different from that of example 4 in that the modified carbon film was not coated.
Comparative example 3
The method for producing the silicon carbide thick epitaxial wafer of comparative example 3 is different from that of example 4 in that the method for producing the modified carbon film is not added with the preform particles in step S4.
The silicon carbide thick epitaxial wafers obtained in examples 4 to 6 and comparative examples 1 to 3 were subjected to the following performance tests, (1) a defect test was performed using a Candela8520 defect tester, and (2) an ablation resistance test was performed with reference to national army standard GJB 323A-96 "ablation test method for ablation materials", the test results are shown in table 1:
TABLE 1
As can be seen from Table 1, the silicon carbide thick epitaxial wafers prepared in examples 4 to 6 have less total defects, lower average mass ablation rate, and better carrier lifetime and ablation resistance than those prepared in comparative examples 1 to 3.
In the description of the present specification, the descriptions of the terms "one embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely illustrative and explanatory of the invention, as various modifications and additions may be made to the particular embodiments described, or in a similar manner, by those skilled in the art, without departing from the scope of the invention or exceeding the scope of the invention as defined in the claims.
Claims (7)
1. A silicon carbide thick epitaxial wafer for a high-voltage device is characterized in that the silicon carbide thick epitaxial wafer for the high-voltage device is prepared by coating a modified carbon film on the carbon surface of a silicon carbide substrate, placing the silicon carbide substrate in a reaction chamber of an epitaxial furnace, introducing hydrogen, heating, introducing a silicon source, a carbon source and a doping source, growing an epitaxial layer to a specified thickness on the silicon surface of the silicon carbide substrate, annealing, cooling to room temperature, protecting the silicon surface blue film of the wafer, and polishing the carbon film to obtain the silicon carbide thick epitaxial wafer for the high-voltage device;
The modified carbon film is prepared by the following steps:
Step S1, adding graphene nano sheets into absolute ethyl alcohol, and performing ultrasonic dispersion to obtain a mixed solution a;
S2, adding aluminum powder into absolute ethyl alcohol, and uniformly stirring to obtain a mixed solution b;
Step S3, mixing the mixed solution a and the mixed solution b, drying, ball-milling the dried powder, and finally performing vacuum hot-pressing sintering to obtain prefabricated particles;
S4, dissolving ascorbic acid in distilled water, uniformly stirring, transferring to a reaction kettle, adding prefabricated particles into the reaction kettle, reacting for 6-7 hours at 200-210 ℃, centrifuging, washing and drying to obtain a semi-finished product;
And S5, dissolving the semi-finished product in distilled water to obtain the modified carbon film.
2. The thick epitaxial wafer of silicon carbide for high voltage device of claim 1, wherein the modified carbon film has a thickness of 50 μm to 500. Mu.m.
3. The silicon carbide thick epitaxial wafer for a high-voltage device of claim 1, wherein the flow rate of hydrogen is 80-120L/min, and the pressure of introducing hydrogen into the reaction chamber is 80-200mbar.
4. The silicon carbide thick epitaxial wafer for the high-voltage device of claim 1, wherein the silicon source is any one of silane, dichlorosilane and trichlorosilane, the carbon source is any one of methane, ethylene and propane, and the doping source is any one of N 2 and trimethylaluminum.
5. A thick epitaxial wafer of silicon carbide for high voltage devices according to claim 1 wherein said annealing is carried out at 1500-1700 ℃ for 20-30min.
6. The silicon carbide thick epitaxial wafer for the high-voltage device, which is disclosed in claim 1, is characterized in that the dosage ratio of graphene nano-sheets to absolute ethyl alcohol in the step S1 is 2.5-3.3mg:300-400mL, the dosage ratio of aluminum powder to absolute ethyl alcohol in the step S2 is 13.2-14.1g:250-350mL, and the condition of vacuum hot-pressing sintering in the step S3 is that the temperature is 440-470 ℃ and the pressure is 60-70MPa.
7. The silicon carbide thick epitaxial wafer for the high-voltage device, which is used for the high-voltage device, is characterized in that the dosage ratio of the ascorbic acid to the distilled water to the prefabricated particles in the step S4 is 20-25 mg/20-25 mL/1.3-1.5 mg, and the dosage ratio of the semi-finished product to the distilled water in the step S5 is 10.3-14.1 mg/50-70 mL.
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