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CN117040471A - Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device - Google Patents

Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device Download PDF

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Publication number
CN117040471A
CN117040471A CN202310963294.7A CN202310963294A CN117040471A CN 117040471 A CN117040471 A CN 117040471A CN 202310963294 A CN202310963294 A CN 202310963294A CN 117040471 A CN117040471 A CN 117040471A
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CN
China
Prior art keywords
load
layer
temperature compensation
forming
acoustic wave
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CN202310963294.7A
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Chinese (zh)
Inventor
郭荣
邹雅丽
杨新宇
汤正杰
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Changzhou Chengxin Semiconductor Co Ltd
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Changzhou Chengxin Semiconductor Co Ltd
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Priority to CN202310963294.7A priority Critical patent/CN117040471A/en
Publication of CN117040471A publication Critical patent/CN117040471A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02685—Grating lines having particular arrangements
    • H03H9/02724—Comb like grating lines
    • H03H9/02732—Bilateral comb like grating lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

A surface acoustic wave resonator device and a method of forming the same, a filter, and a duplexer, wherein the device includes: a piezoelectric layer; the electrode structure is positioned on the piezoelectric layer and comprises a first bus and a second bus, the first bus is connected with a plurality of first electrode strips, the second bus is connected with a plurality of second electrode strips, and a first interval area, a superposition area and a second interval area are arranged between the first bus and the second bus; a temperature compensation layer on the piezoelectric layer; and the first load and the second load are positioned in the temperature compensation layer, the projection of the first load towards the piezoelectric layer is positioned in the first interval region, and the projection of the second load towards the piezoelectric layer is positioned in the second interval region. The propagation speed of energy from the superposition area to the first interval area can be reduced by using the first load, and the propagation speed of energy from the superposition area to the second interval area can be reduced by using the second load, so that a piston mode is formed, and the generation of transverse parasitic modes of the energy in the superposition area is effectively restrained.

Description

Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonator device, a forming method thereof, a filter and a duplexer.
Background
A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. Among them, the radio frequency filters include piezoelectric surface acoustic wave (SurfaceAcoustic Wave, SAW) filters, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filters, microelectromechanical system (Micro-Electro-Mechanical System, MEMS) filters, integrated passive device (Integrated PassiveDevices, IPD) filters, and the like.
The SAW resonator has a high quality factor (Q value), and is manufactured into an RF filter with low insertion loss (insertion loss) and high out-band rejection (out-band rejection), that is, a SAW filter, which is a mainstream RF filter currently used in wireless communication devices such as mobile phones and base stations. SAW resonators have a negative temperature coefficient of frequency (Temperature Coefficient of Frequency, TCF), i.e. the resonant frequency (resonant frequency) of the resonator decreases when the temperature increases and increases when the temperature decreases. The reliability and stability of SAW filters are reduced. In order to improve the characteristic of the resonance frequency drift of the SAW resonator with the operating temperature, a temperature compensation layer is added to the piezoelectric layer, and the temperature compensation layer has a temperature coefficient of frequency opposite to that of the piezoelectric layer. The combination of the two leads the temperature coefficient of the frequency of the whole resonator to trend to zero, thereby improving the reliability and the stability of the filter. Such a SAW resonator including a temperature compensation layer is called a temperature compensation SAW (Temperature Compensated SAW, TC-SAW) resonator, and a filter composed of the TC-SAW resonator is called a TC-SAW filter.
However, the surface acoustic wave resonator device still has many problems.
Disclosure of Invention
The invention provides a surface acoustic wave resonance device, a forming method thereof, a filter and a duplexer, which are used for restraining a high-order transverse parasitic mode.
In order to solve the above problems, the present invention provides a surface acoustic wave resonator device, including: a piezoelectric layer; the electrode structure is positioned on the piezoelectric layer and comprises a first bus and a second bus which are arranged in parallel along a first direction, the first bus is connected with a plurality of first electrode strips which are arranged in parallel along a second direction, the second bus is connected with a plurality of second electrode strips which are arranged in parallel along the second direction, the first direction is perpendicular to the second direction, the first electrode strips and the second electrode strips are arranged in a staggered manner, a first interval area, a superposition area and a second interval area which are arranged in sequence along the first direction are arranged between the first bus and the second bus, and the superposition area is positioned between the first interval area and the second interval area and is positioned in the superposition area along the second direction; a temperature compensation layer on the piezoelectric layer, the temperature compensation layer covering the electrode structure; and a first load and a second load positioned in the temperature compensation layer, wherein the first load and the second load are positioned on the electrode structure, the projection of the first load towards the piezoelectric layer is positioned in the first interval region, and the projection of the second load towards the piezoelectric layer is positioned in the second interval region.
Optionally, a first height is provided between the bottom surface of the first load and the top surface of the piezoelectric layer, and a second height is provided between the bottom surface of the second load and the top surface of the piezoelectric layer, and the first height is equal to the second height.
Optionally, the method further comprises: a first load layer comprising the first load and the second load, the parameters of the first load and the second load being the same, the parameters comprising material and thickness.
Optionally, a first height is provided between the bottom surface of the first load and the top surface of the piezoelectric layer, and a second height is provided between the bottom surface of the second load and the top surface of the piezoelectric layer, and the first height is not equal to the second height.
Optionally, the method further comprises: a first load layer comprising the first load and a second load layer comprising the second load, the first load and the second load being different in parameters, the parameters comprising material or thickness.
Optionally, the first load and the second load are in a linear structure.
Optionally, the first load and the second load extend along the second direction, respectively.
Optionally, the first load extends along a third direction, and a first included angle is formed between the third direction and the second direction; the second load extends along a fourth direction, and a second included angle is formed between the fourth direction and the second direction.
Optionally, the third direction is different from the fourth direction, and the first included angle is equal to the second included angle.
Optionally, the third direction is the same as the fourth direction.
Optionally, the range of the first included angle is: 1 ° to 45 °; the range of the second included angle is as follows: 1 deg. to 45 deg..
Optionally, the first load and the second load are in a broken line structure.
Optionally, the materials of the first load and the second load include: molybdenum, tungsten, copper, platinum, rhenium, osmium, iridium, tantalum, gold, and hafnium.
Correspondingly, the invention also provides a method for forming the surface acoustic wave resonance device, which comprises the following steps: providing a piezoelectric layer; forming an electrode structure on the piezoelectric layer; wherein forming the electrode structure comprises: forming a first bus and a second bus which are arranged in parallel along a first direction, wherein a first interval region, a superposition region and a second interval region which are arranged in sequence along the first direction are arranged between the first bus and the second bus, and the superposition region is positioned between the first interval region and the second interval region; forming a plurality of first electrode strips which are arranged in parallel along a second direction, wherein the first bus is connected with the plurality of first electrode strips, and the first direction is perpendicular to the second direction; forming a plurality of second electrode strips which are arranged in parallel along the second direction, wherein the second bus is connected with the plurality of second electrode strips, the first electrode strips and the second electrode strips are arranged in a staggered manner, and the first electrode strips and the second electrode strips which are positioned in the overlapping area are overlapped along the second direction; forming a temperature compensation layer on the piezoelectric layer, wherein the temperature compensation layer covers the electrode structure; and forming a first load and a second load on the piezoelectric layer, wherein the temperature compensation layer also covers the first load and the second load, the first load and the second load are positioned on the electrode structure, the projection of the first load towards the piezoelectric layer is positioned in the first interval region, and the projection of the second load towards the piezoelectric layer is positioned in the second interval region.
Optionally, a first height is provided between the bottom surface of the first load and the top surface of the piezoelectric layer, and a second height is provided between the bottom surface of the second load and the top surface of the piezoelectric layer, and the first height is equal to the second height.
Optionally, the method further comprises: a first load layer is formed, the first load layer comprising the first load and the second load, the parameters of the first load and the second load being the same, the parameters comprising material and thickness.
Optionally, the method for forming the temperature compensation layer and the first load layer includes: forming a first sub-temperature compensation layer, wherein the first sub-temperature compensation layer covers the electrode structure; forming the first load layer on the first sub-temperature compensation layer; and forming a second sub-temperature compensation layer on the first sub-temperature compensation layer, wherein the second sub-temperature compensation layer covers the first load layer, and the temperature compensation layer is formed by the first sub-temperature compensation layer and the second sub-temperature compensation layer.
Optionally, the bottom surface of the first load and the top surface of the piezoelectric layer have a first height, and the bottom surface of the second load and the top surface of the piezoelectric layer have a second height, and the first height and the second height are not equal.
Optionally, the method further comprises: forming a first load layer and a second load layer, wherein the first load layer comprises the first load, the second load layer comprises the second load, parameters of the first load and the second load are different, and the parameters comprise materials or thicknesses.
Optionally, the method for forming the temperature compensation layer, the first load layer and the second load layer includes: forming a first sub-temperature compensation layer, wherein the first sub-temperature compensation layer covers the electrode structure; forming the first load layer on the first sub-temperature compensation layer; forming a second sub-temperature compensation layer on the first sub-temperature compensation layer, wherein the second sub-temperature compensation layer covers the first load layer; forming the second load layer on the second sub-temperature compensation layer; and forming a third sub-temperature compensation layer on the second sub-temperature compensation layer, wherein the third sub-temperature compensation layer covers the second load layer, and the temperature compensation layer is formed by the first sub-temperature compensation layer, the second sub-temperature compensation layer and the third sub-temperature compensation layer.
Optionally, the first load and the second load are in a linear structure.
Optionally, the first load and the second load are in a broken line structure.
Correspondingly, the technical scheme of the invention also provides a filter, which comprises: the surface acoustic wave resonator device according to any of the above.
Correspondingly, the technical scheme of the invention also provides a duplexer, which comprises: such as the filters described above.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the surface acoustic wave resonator device according to the technical scheme of the invention, the surface acoustic wave resonator device comprises the first load and the second load in the temperature compensation layer, wherein the projection of the first load towards the piezoelectric layer is positioned in the first interval region, so that the sound wave propagation speed of the region where the first load is positioned can be reduced, and the projection of the second load towards the piezoelectric layer is positioned in the second interval region, so that the sound wave propagation speed of the region where the second load is positioned can be reduced, thereby forming a piston mode (piston mode), and effectively inhibiting a high-order transverse parasitic mode generated in the superposition region.
In the method for forming the surface acoustic wave resonator according to the technical scheme of the present invention, by forming the first load and the second load in the temperature compensation layer, the projection of the first load toward the piezoelectric layer is located in the first interval region, so that the acoustic wave propagation speed of the region where the first load is located can be reduced, and the projection of the second load toward the piezoelectric layer is located in the second interval region, so that the acoustic wave propagation speed of the region where the second load is located can be reduced, thereby forming a piston mode (piston mode), and effectively suppressing the high-order lateral parasitic mode generated in the overlapping region.
Drawings
Fig. 1 and 2 are schematic structural views of a surface acoustic wave resonator device;
fig. 3 to 6 are schematic structural views of steps of a method for forming a surface acoustic wave resonator device according to an embodiment of the present invention;
fig. 7 is a schematic view showing a structure in which the first load and the second load are different in height in a surface acoustic wave resonator apparatus according to another embodiment of the present invention;
fig. 8 is a schematic structural view showing steps of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention;
fig. 9 is a schematic structural view of steps of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention;
FIG. 10 is a schematic diagram showing steps of a method for forming a SAW resonator device in accordance with another embodiment of the present invention
Fig. 11 is a schematic structural view of steps of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
Detailed Description
As described in the background, there are still problems with the surface acoustic wave resonator device. The following will make a detailed description with reference to the accompanying drawings.
Fig. 1 and 2 are schematic structural views of a surface acoustic wave resonator device.
Referring to fig. 1 and 2, fig. 2 is a schematic cross-sectional view of fig. 1 along line A-A, and shows a piezoelectric layer 100; the electrode structure on the piezoelectric layer 100, the electrode structure 100 includes a first bus 101 and a second bus 102 that are arranged in parallel along a first direction X, the first bus 101 is connected with a plurality of first electrode strips 103 that are arranged in parallel along a second direction Y, the second bus 102 is connected with a plurality of second electrode strips 104 that are arranged in parallel along the second direction Y, the first direction X is perpendicular to the second direction Y, the first electrode strips 103 and the second electrode strips 104 are placed in a staggered manner, the first electrode strips 103 include a first portion 1031 and a second portion 1032 that are connected along the first direction X, the second electrode strips 104 include a third portion 1041 and a fourth portion 1042 that are connected along the first direction X, the second portion 1032 and the third portion 1041 are overlapped in the second direction Y, a first spacer A1, a second spacer B1 and a second spacer B2 are arranged between the first bus 101 and the second bus 102, the first spacer A1 and the second spacer B2 are overlapped with the second spacer A1 and the second spacer A2 are positioned between the first spacer A1 and the second spacer A2.
In this embodiment, the method further includes: and a temperature compensation layer (not shown) on the piezoelectric layer 100, wherein the temperature compensation layer covers the electrode structure, and the temperature compensation layer and the piezoelectric layer 100 have opposite temperature frequency shift characteristics, so that the frequency temperature coefficient (TemperatureCoefficient of Frequency, TCF) can be reduced to be 0 ppm/DEG C, thereby improving the characteristic that the working frequency of the surface acoustic wave resonance device drifts along with the working temperature, and having higher frequency-temperature stability. A surface acoustic wave resonator device including a temperature compensation layer is called a temperature compensated surface acoustic wave resonator device (i.e., TC-SAW resonator).
In this embodiment, since the arrangement density of the first electrode strips 103 and the second electrode strips 104 in the overlapping region B1 is relatively high, the wave velocity in the overlapping region B1 is smaller than the wave velocity in the first spacing region A1 and the second spacing region A2, and therefore, the main frequency energy of the resonant device is bound in the overlapping region B1 by using the wave velocity difference between the overlapping region B1 and the first spacing region A1 and the second spacing region A2, respectively, to form a standing wave.
However, since the first electrode strip 103 and the second electrode strip 104 are both in a straight strip shape and have uniform quality, energy propagates at a high speed in the overlapping region B1, and energy propagates at a higher speed in the first spacer A1 and the second spacer A2, and there is no transition between the overlapping region B1 and the first spacer A1 and between the overlapping region B1 and the second spacer A2, and there is no transition between the overlapping region B1 and the second spacer A2, which affects the performance of the resonant device due to a high-order lateral parasitic mode excited when the resonant device is in operation.
On the basis, the invention provides a surface acoustic wave resonance device, a forming method thereof, a filter and a duplexer, wherein the projection of a first load towards a piezoelectric layer is positioned in a first interval area, so that the sound wave propagation speed of an area where the first load is positioned can be reduced, the projection of a second load towards the piezoelectric layer is positioned in a second interval area, and the sound wave propagation speed of an area where the second load is positioned can be reduced, thereby forming a piston mode (piston mode), and effectively inhibiting a high-order transverse parasitic mode generated in a superposition area.
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than as described herein, and therefore the present invention is not limited to the specific embodiments disclosed below.
Fig. 3 to 6 are schematic structural views of steps of a method for forming a surface acoustic wave resonator device according to an embodiment of the present invention; fig. 7 is a schematic view showing a structure in which the first load and the second load are different in height in the surface acoustic wave resonator apparatus in another embodiment of the present invention.
Referring to fig. 3, a piezoelectric layer 200 is provided.
The materials of the piezoelectric layer 200 include: lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate, aluminum nitride alloy, gallium nitride, or zinc oxide. In this embodiment, the material of the piezoelectric layer 200 is lithium niobate.
Referring to fig. 4, an electrode structure is formed on the piezoelectric layer 200.
In this embodiment, forming the electrode structure includes: forming a first bus 201 and a second bus 202 which are arranged in parallel along a first direction X, wherein a first interval area A1, a superposition area B1 and a second interval area A2 which are sequentially arranged along the first direction X are arranged between the first bus 201 and the second bus 202, and the superposition area B1 is positioned between the first interval area A1 and the second interval area A2; forming a plurality of first electrode strips 203 which are arranged in parallel along a second direction Y, wherein the first bus 201 is connected with the plurality of first electrode strips 203, and the first direction X is perpendicular to the second direction Y; a plurality of second electrode strips 204 are formed and arranged in parallel along the second direction Y, the second bus 202 is connected with the plurality of second electrode strips 204, the first electrode strips 203 and the second electrode strips 204 are placed in a staggered manner, and the first electrode strips 203 and the second electrode strips 204 located in the overlapping area B1 overlap along the second direction Y.
Referring to fig. 5 and 6, fig. 5 is a top view with the temperature compensation layer omitted, fig. 6 is a schematic cross-sectional view taken along line A-A in fig. 5, and a temperature compensation layer 205, a first load 206 and a second load 207 are formed on the piezoelectric layer 200, wherein the temperature compensation layer 205 covers the electrode structure; a first load 206 and a second load 207 are formed on the piezoelectric layer 200, the temperature compensation layer 205 also covers the first load 206 and the second load 207, the first load 206 and the second load 207 are located on the electrode structure, a projection of the first load 206 towards the piezoelectric layer 200 is located at the first interval A1, and a projection of the second load 207 towards the piezoelectric layer 200 is located at the second interval A2.
In this embodiment, by forming the first load 206 and the second load 207 in the temperature compensation layer 205, the projection of the first load 206 toward the piezoelectric layer 200 is located in the first interval area A1, so that the sound wave propagation speed of the area where the first load 206 is located can be reduced, and the projection of the second load 207 toward the piezoelectric layer 200 is located in the second interval area A2, so that the sound wave propagation speed of the area where the second load 207 is located can be reduced, thereby forming a piston mode (piston mode), and effectively suppressing the high-order lateral parasitic mode generated in the overlapping area.
In this embodiment, the temperature compensation layer 205 and the piezoelectric layer 200 have opposite temperature frequency shift characteristics, so that the frequency temperature coefficient (TemperatureCoefficient of Frequency, TCF) can be reduced, and the frequency temperature coefficient tends to be 0ppm/°c, thereby improving the characteristic that the operating frequency of the surface acoustic wave resonator device shifts with the operating temperature, and having higher frequency-temperature stability. A surface acoustic wave resonator device including a temperature compensation layer is called a temperature compensated surface acoustic wave resonator device (i.e., TC-SAW resonator).
In this embodiment, a first height d1 is provided between the bottom surface of the first load 206 and the top surface of the piezoelectric layer 200, and a second height d2 is provided between the bottom surface of the second load 207 and the top surface of the piezoelectric layer 200, where the first height d1 is equal to the second height d 2.
In this embodiment, further comprising: a first load layer (not shown) is formed, the first load layer comprising the first load 206 and the second load 207, the parameters of the first load 206 and the second load 207 being the same, the parameters comprising material and thickness.
In this embodiment, the method for forming the temperature compensation layer 205 and the first load layer includes: forming a first sub-temperature compensation layer 2051 on the piezoelectric layer 200, the first sub-temperature compensation layer 2051 covering the electrode structure; forming the first load layer on the first sub-temperature compensation layer 2051; a second sub-temperature compensation layer 2052 is formed on the first sub-temperature compensation layer 2051, the second sub-temperature compensation layer 2052 covers the first load layer, and the temperature compensation layer 205 is formed of the first sub-temperature compensation layer 2051 and the second sub-temperature compensation layer 2052.
Referring to fig. 7, the directions of the views in fig. 7 and 6 are consistent, in other embodiments, the bottom surface of the first load 206 and the top surface of the piezoelectric layer 200 have a first height d1, the bottom surface of the second load 207 and the top surface of the piezoelectric layer 200 have a second height d2, and the first height d1 and the second height d2 are not equal.
Correspondingly, the method further comprises the following steps: a first load layer (not shown) comprising the first load 206 and a second load layer (not shown) comprising the second load 207 are formed, the parameters of the first load 206 and the second load 207 being different, the parameters comprising material or thickness.
Correspondingly, the method for forming the temperature compensation layer 205, the first load layer and the second load layer includes: forming a first sub-temperature compensation layer 2051 on the piezoelectric layer 200, the first sub-temperature compensation layer 2051 covering the electrode structure; forming the first load layer on the first sub-temperature compensation layer 2051; forming a second sub-temperature compensation layer 2052 on the first sub-temperature compensation layer 2051, the second sub-temperature compensation layer 2052 covering the first load layer; forming the second load layer on the second sub-temperature compensation layer 2052; a third sub-temperature compensation layer 2053 is formed on the second sub-temperature compensation layer 2052, the third sub-temperature compensation layer 2053 covers the second load layer, and the temperature compensation layer 205 is formed of the first sub-temperature compensation layer 2051, the second sub-temperature compensation layer 2052, and the third sub-temperature compensation layer 2053.
In this embodiment, the first load 206 and the second load 207 have a linear structure.
In the present embodiment, the first load 206 and the second load 207 extend in the second direction Y, respectively.
In this embodiment, the materials of the first load 206 and the second load 207 include: molybdenum, tungsten, copper, platinum, rhenium, osmium, iridium, tantalum, gold, and hafnium.
Correspondingly, in the embodiment of the present invention, a surface acoustic wave resonator is further provided, please continue to refer to fig. 5 and fig. 6, including: a piezoelectric layer 200; the electrode structure is located on the piezoelectric layer 200, the electrode structure includes a first bus 201 and a second bus 202 which are arranged in parallel along a first direction X, the first bus 201 is connected with a plurality of first electrode bars 203 which are arranged in parallel along a second direction Y, the second bus 202 is connected with a plurality of second electrode bars 204 which are arranged in parallel along the second direction Y, the first direction X is perpendicular to the second direction Y, the first electrode bars 203 and the second electrode bars 204 are staggered, a first interval area A1, a superposition area B1 and a second interval area A2 which are arranged in sequence along the first direction X are arranged between the first bus 201 and the second bus 202, the superposition area B1 is located between the first interval area A1 and the second interval area A2, and the first electrode bars 203 and the second electrode bars 204 located in the superposition area B1 are superposed along the second direction Y; a temperature compensation layer 205 on the piezoelectric layer 200, the temperature compensation layer 205 covering the electrode structure; a first load 206 and a second load 207 located within the temperature compensation layer 205, the first load 206 and the second load 207 being located on the electrode structure, a projection of the first load 206 towards the piezoelectric layer 200 being located at the first spacer A1, and a projection of the second load 207 towards the piezoelectric layer 200 being located at the second spacer A2.
In this embodiment, the projection of the first load 206 toward the piezoelectric layer 200 is located in the first interval area A1, so that the acoustic wave propagation speed of the region where the first load 206 is located can be reduced, the projection of the second load 207 toward the piezoelectric layer 200 is located in the second interval area A2, so that the acoustic wave propagation speed of the region where the second load 207 is located can be reduced, thereby forming a piston mode (piston mode), and effectively suppressing the high-order lateral parasitic mode generated in the overlapping region.
In this embodiment, the bottom surface of the first load 206 and the top surface of the piezoelectric layer 200 have a first height d1, the bottom surface of the second load 207 and the top surface of the piezoelectric layer 200 have a second height d2, and the first height d1 is equal to the second height d 2.
In this embodiment, further comprising: a first load layer (not labeled) comprising the first load 206 and the second load 207, the parameters of the first load 206 and the second load 207 being the same, the parameters comprising material and thickness.
With continued reference to fig. 7, in other embodiments, the bottom surface of the first load 206 and the top surface of the piezoelectric layer 200 have a first height d1, the bottom surface of the second load 207 and the top surface of the piezoelectric layer 200 have a second height d2, and the first height d1 and the second height d2 are not equal.
Correspondingly, the method further comprises the following steps: a first load layer (not labeled) comprising the first load 206 and a second load layer (not labeled) comprising the second load 207, the parameters of the first load 206 and the second load 207 being different, the parameters comprising material or thickness.
In this embodiment, the first load 206 and the second load 207 have a linear structure.
In the present embodiment, the first load 206 and the second load 207 extend in the second direction Y, respectively.
Fig. 8 is a schematic structural diagram showing steps of a method for forming a surface acoustic wave resonator device according to another embodiment of the present invention.
In this embodiment, a method for forming a surface acoustic wave resonator device is described based on the above embodiment (fig. 5 and 6), and the difference from the above embodiment is that: the first load 206 and the second load 207 do not extend in the second direction Y. The following will explain the embodiments with reference to the drawings.
Referring to fig. 8, fig. 8 is a top view of omitting the temperature compensation layer 205, wherein the first load 206 extends along a third direction M, and a first included angle is formed between the third direction M and the second direction Y; the second load 207 extends along a fourth direction N, and a second included angle is formed between the fourth direction N and the second direction Y.
In this embodiment, the third direction M is different from the fourth direction N, and the first included angle is equal to the second included angle, that is, the first load 206 and the second load 207 are axisymmetrically disposed.
In this embodiment, the range of the first included angle is: 1 ° to 45 °; the range of the second included angle is as follows: 1 deg. to 45 deg..
Correspondingly, in the embodiment of the present invention, a surface acoustic wave resonator is further provided, please continue to refer to fig. 8, and the rest of the structures are the same as the surface acoustic wave resonator described in the above embodiment, except that: the first load 206 extends along a third direction M, and a first included angle is formed between the third direction M and the second direction Y; the second load 207 extends along a fourth direction N, and a second included angle is formed between the fourth direction N and the second direction Y.
In this embodiment, the third direction M is different from the fourth direction N, and the first included angle is equal to the second included angle, that is, the first load 206 and the second load 207 are axisymmetrically disposed.
In this embodiment, the range of the first included angle is: 1 ° to 45 °; the range of the second included angle is as follows: 1 deg. to 45 deg..
Fig. 9 is a schematic structural view of steps of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
In this embodiment, a method for forming a surface acoustic wave resonator device is described based on the above embodiment (fig. 5 and 6), and the difference from the above embodiment is that: the first load 206 and the second load 207 do not extend in the second direction Y. The following will explain the embodiments with reference to the drawings.
Referring to fig. 9, fig. 9 is a top view of omitting the temperature compensation layer 205, wherein the first load 206 extends along a third direction M, and a first included angle is formed between the third direction M and the second direction Y; the second load 207 extends along a fourth direction N, and a second included angle is formed between the fourth direction N and the second direction Y.
In this embodiment, the third direction M is the same as the fourth direction N, that is, the first load 206 and the second load 207 are disposed in parallel.
In this embodiment, the range of the first included angle is: 1 ° to 45 °; the range of the second included angle is as follows: 1 deg. to 45 deg..
Correspondingly, in the embodiment of the present invention, a surface acoustic wave resonator is further provided, please continue to refer to fig. 9, and the rest of the structures are the same as the surface acoustic wave resonator described in the above embodiment, except that: the first load 206 extends along a third direction M, and a first included angle is formed between the third direction M and the second direction Y; the second load 207 extends along a fourth direction N, and a second included angle is formed between the fourth direction N and the second direction Y.
In this embodiment, the third direction M is the same as the fourth direction N, that is, the first load 206 and the second load 207 are disposed in parallel.
In this embodiment, the range of the first included angle is: 1 ° to 45 °; the range of the second included angle is as follows: 1 deg. to 45 deg..
Fig. 10 is a schematic structural view of steps of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
In this embodiment, a method for forming a surface acoustic wave resonator device is described based on the above embodiment (fig. 5 and 6), and the difference from the above embodiment is that: the first load 206 and the second load 207 are in a broken line structure. The following will explain the embodiments with reference to the drawings.
Referring to fig. 10, fig. 10 is a top view of the temperature compensation layer 205 omitted, and the first load 206 and the second load 207 are in a broken line structure.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of first pitch sizes s1 are provided between the first load 206 and the plurality of second electrode strips 204, and a difference between any two first pitch sizes s1 ranges from 0L to 0.1L.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of second pitch sizes s2 are provided between the second load 207 and the plurality of first electrode strips 203, and a difference between any two second pitch sizes s2 ranges from 0L to 0.1L.
In this embodiment, the first load 206 and the second load 207 are disposed in axisymmetric manner.
Correspondingly, in the embodiment of the present invention, a surface acoustic wave resonator is further provided, please continue to refer to fig. 10, and the rest of the structures are the same as the surface acoustic wave resonator described in the above embodiment, except that: the first load 206 and the second load 207 are in a broken line structure.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of first pitch sizes s1 are provided between the first load 206 and the plurality of second electrode strips 204, and a difference between any two first pitch sizes s1 ranges from 0L to 0.1L.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of second pitch sizes s2 are provided between the second load 207 and the plurality of first electrode strips 203, and a difference between any two second pitch sizes s2 ranges from 0L to 0.1L.
In this embodiment, when the first space dimension s1 between the first load 206 and the corresponding second electrode bar 204 is measured, the central axis of the second electrode bar 204 is taken as a reference; correspondingly, when the second distance s2 between the second load 207 and the corresponding first electrode strip 203 is measured, the central axis of the first electrode strip 203 is taken as a reference.
In this embodiment, the first load 206 and the second load 207 are disposed in axisymmetric manner.
Fig. 11 is a schematic structural view of steps of a method for forming a surface acoustic wave resonator device according to still another embodiment of the present invention.
In this embodiment, a method for forming a surface acoustic wave resonator device is described based on the above embodiment (fig. 5 and 6), and the difference from the above embodiment is that: the first load 206 and the second load 207 are in a broken line structure. The following will explain the embodiments with reference to the drawings.
Referring to fig. 11, fig. 11 is a top view of the temperature compensation layer 205 omitted, and the first load 206 and the second load 207 have a broken line structure.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of first pitch sizes s1 are provided between the first load 206 and the plurality of second electrode strips 204, and a difference between any two first pitch sizes s1 ranges from 0L to 0.1L.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of second pitch sizes s2 are provided between the second load 207 and the plurality of first electrode strips 203, and a difference between any two second pitch sizes s2 ranges from 0L to 0.1L.
In this embodiment, when the first space dimension s1 between the first load 206 and the corresponding second electrode bar 204 is measured, the central axis of the second electrode bar 204 is taken as a reference; correspondingly, when the second distance s2 between the second load 207 and the corresponding first electrode strip 203 is measured, the central axis of the first electrode strip 203 is taken as a reference.
In this embodiment, the first load 206 and the second load 207 are disposed in parallel.
Correspondingly, the embodiment of the present invention further provides a surface acoustic wave resonator device, please continue to refer to fig. 11, and the rest of the structures are the same as the surface acoustic wave resonator device described in the above embodiment, except that: the first load 206 and the second load 207 are in a broken line structure.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of first pitch sizes s1 are provided between the first load 206 and the plurality of second electrode strips 204, and a difference between any two first pitch sizes s1 ranges from 0L to 0.1L.
In this embodiment, a first center-to-center distance L is provided between adjacent first electrode bars 203 or second electrode bars 204 along the second direction Y; along the first direction X, a plurality of second pitch sizes s2 are provided between the second load 207 and the plurality of first electrode strips 203, and a difference between any two second pitch sizes s2 ranges from 0L to 0.1L.
In this embodiment, the first load 206 and the second load 207 are disposed in parallel.
Correspondingly, the embodiment of the application also provides a filter, which comprises: the surface acoustic wave resonator device according to any one of the embodiments described above.
Correspondingly, the embodiment of the application also provides a duplexer, which comprises: the filter as described in the above embodiment.
It should be understood that the examples and embodiments herein are illustrative only and that various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the application as defined by the appended claims.

Claims (24)

1. A surface acoustic wave resonator device comprising:
a piezoelectric layer;
the electrode structure is positioned on the piezoelectric layer and comprises a first bus and a second bus which are arranged in parallel along a first direction, the first bus is connected with a plurality of first electrode strips which are arranged in parallel along a second direction, the second bus is connected with a plurality of second electrode strips which are arranged in parallel along the second direction, the first direction is perpendicular to the second direction, the first electrode strips and the second electrode strips are arranged in a staggered manner, a first interval area, a superposition area and a second interval area which are arranged in sequence along the first direction are arranged between the first bus and the second bus, and the superposition area is positioned between the first interval area and the second interval area and is positioned in the superposition area along the second direction;
A temperature compensation layer on the piezoelectric layer, the temperature compensation layer covering the electrode structure;
and a first load and a second load positioned in the temperature compensation layer, wherein the first load and the second load are positioned on the electrode structure, the projection of the first load towards the piezoelectric layer is positioned in the first interval region, and the projection of the second load towards the piezoelectric layer is positioned in the second interval region.
2. The surface acoustic wave resonator device of claim 1, wherein a bottom surface of the first load and a top surface of the piezoelectric layer have a first height therebetween, and a bottom surface of the second load and a top surface of the piezoelectric layer have a second height therebetween, the first height being equal to the second height.
3. The surface acoustic wave resonator apparatus of claim 2, further comprising: a first load layer comprising the first load and the second load, the parameters of the first load and the second load being the same, the parameters comprising material and thickness.
4. The surface acoustic wave resonator device of claim 1, wherein a bottom surface of the first load and a top surface of the piezoelectric layer have a first height therebetween, and a bottom surface of the second load and a top surface of the piezoelectric layer have a second height therebetween, the first height and the second height being unequal.
5. The surface acoustic wave resonator apparatus of claim 4, further comprising: a first load layer comprising the first load and a second load layer comprising the second load, the first load and the second load being different in parameters, the parameters comprising material or thickness.
6. The surface acoustic wave resonator apparatus of claim 1, wherein the first load and the second load are in a straight line configuration.
7. The surface acoustic wave resonator apparatus of claim 6, wherein the first load and the second load each extend in the second direction.
8. The surface acoustic wave resonator device of claim 6, wherein the first load extends in a third direction, the third direction having a first angle with the second direction; the second load extends along a fourth direction, and a second included angle is formed between the fourth direction and the second direction.
9. The surface acoustic wave resonator apparatus of claim 8, wherein the third direction is different from the fourth direction, and the first angle is equal to the second angle.
10. The surface acoustic wave resonator apparatus of claim 8, wherein the third direction is the same as the fourth direction.
11. The surface acoustic wave resonator apparatus of claim 8, wherein the first included angle ranges from: 1 ° to 45 °; the range of the second included angle is as follows: 1 deg. to 45 deg..
12. The surface acoustic wave resonator apparatus of claim 1, wherein the first load and the second load are in a meander line structure.
13. The surface acoustic wave resonator apparatus of claim 1, wherein the materials of the first load and the second load comprise: molybdenum, tungsten, copper, platinum, rhenium, osmium, iridium, tantalum, gold, and hafnium.
14. A method of forming a surface acoustic wave resonator device, comprising:
providing a piezoelectric layer;
forming an electrode structure on the piezoelectric layer; wherein,
forming the electrode structure includes:
forming a first bus and a second bus which are arranged in parallel along a first direction, wherein a first interval region, a superposition region and a second interval region which are arranged in sequence along the first direction are arranged between the first bus and the second bus, and the superposition region is positioned between the first interval region and the second interval region;
Forming a plurality of first electrode strips which are arranged in parallel along a second direction, wherein the first bus is connected with the plurality of first electrode strips, and the first direction is perpendicular to the second direction;
forming a plurality of second electrode strips which are arranged in parallel along the second direction, wherein the second bus is connected with the plurality of second electrode strips, the first electrode strips and the second electrode strips are arranged in a staggered manner, and the first electrode strips and the second electrode strips which are positioned in the overlapping area are overlapped along the second direction;
forming a temperature compensation layer on the piezoelectric layer, wherein the temperature compensation layer covers the electrode structure;
and forming a first load and a second load on the piezoelectric layer, wherein the temperature compensation layer also covers the first load and the second load, the first load and the second load are positioned on the electrode structure, the projection of the first load towards the piezoelectric layer is positioned in the first interval region, and the projection of the second load towards the piezoelectric layer is positioned in the second interval region.
15. The method of forming a surface acoustic wave resonator device of claim 14 wherein the bottom surface of the first load and the top surface of the piezoelectric layer have a first height therebetween, the bottom surface of the second load and the top surface of the piezoelectric layer have a second height therebetween, and the first height is equal to the second height.
16. The method of forming a surface acoustic wave resonator device of claim 15, further comprising: a first load layer is formed, the first load layer comprising the first load and the second load, the parameters of the first load and the second load being the same, the parameters comprising material and thickness.
17. The method of forming a surface acoustic wave resonator device of claim 16, wherein the method of forming the temperature compensation layer and the first load layer comprises: forming a first sub-temperature compensation layer, wherein the first sub-temperature compensation layer covers the electrode structure; forming the first load layer on the first sub-temperature compensation layer; and forming a second sub-temperature compensation layer on the first sub-temperature compensation layer, wherein the second sub-temperature compensation layer covers the first load layer, and the temperature compensation layer is formed by the first sub-temperature compensation layer and the second sub-temperature compensation layer.
18. The method of forming a surface acoustic wave resonator device of claim 14 wherein the bottom surface of the first load and the top surface of the piezoelectric layer have a first height and the bottom surface of the second load and the top surface of the piezoelectric layer have a second height, the first height and the second height being unequal.
19. The method of forming a surface acoustic wave resonator device of claim 18, further comprising: forming a first load layer and a second load layer, wherein the first load layer comprises the first load, the second load layer comprises the second load, parameters of the first load and the second load are different, and the parameters comprise materials or thicknesses.
20. The method of forming a surface acoustic wave resonator device of claim 19, wherein the method of forming the temperature compensation layer, the first load layer, and the second load layer comprises: forming a first sub-temperature compensation layer, wherein the first sub-temperature compensation layer covers the electrode structure; forming the first load layer on the first sub-temperature compensation layer; forming a second sub-temperature compensation layer on the first sub-temperature compensation layer, wherein the second sub-temperature compensation layer covers the first load layer; forming the second load layer on the second sub-temperature compensation layer; and forming a third sub-temperature compensation layer on the second sub-temperature compensation layer, wherein the third sub-temperature compensation layer covers the second load layer, and the temperature compensation layer is formed by the first sub-temperature compensation layer, the second sub-temperature compensation layer and the third sub-temperature compensation layer.
21. The method of forming a surface acoustic wave resonator device of claim 14 wherein the first load and the second load are in a linear configuration.
22. The method of forming a surface acoustic wave resonator device of claim 14 wherein the first load and the second load are in a meander line configuration.
23. A filter, comprising: the surface acoustic wave resonator device according to any one of claims 1 to 13.
24. A duplexer, comprising: the filter of claim 23.
CN202310963294.7A 2023-08-01 2023-08-01 Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device Pending CN117040471A (en)

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CN202310963294.7A CN117040471A (en) 2023-08-01 2023-08-01 Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device

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