CN117039606A - Horizontal cavity surface emitting laser and laser device - Google Patents

Abstract

The present application relates to a horizontal cavity surface emitting laser and laser equipment. A horizontal cavity surface emitting laser has a light emission direction. The horizontal cavity surface emitting laser includes a grating layer and a mirror layer. The grating layer can emit two diffracted beams with opposite emission directions along the light emission direction. The mirror layer The grating layer and the grating layer are arranged sequentially along the light emission direction, and the reflector layer is used to reflect at least part of the diffracted light beam emitted by the grating layer that is opposite to the light emission direction toward the grating layer. The above-mentioned horizontal cavity surface emitting laser is beneficial to improving the luminous power of the horizontal cavity surface emitting laser and reducing the energy consumption of the horizontal cavity surface emitting laser.

Description

Horizontal cavity surface emitting lasers and laser equipment

Technical field

The present application relates to the field of laser technology, and in particular to a horizontal cavity surface emitting laser and laser equipment.

Background technique

Horizontal cavity surface-emitting laser (Horizontal cavity surface-emitting laser, hereinafter referred to as HCSEL) is an important member of the semiconductor laser family. HCSEL is similar to the structure of edge-emitting lasers (Edge-emitting Semiconductor Lasers, hereinafter referred to as EEL). It is a horizontally resonant laser. The cavity uses diffractive optical methods to form surface light perpendicular to the laser oscillation direction. HCSEL combines the advantages of Vertical-Cavity Surface-Emitting Laser (VCSEL) in terms of overall tape-out and easy packaging at the wafer level, as well as the long cavity length and high power of EEL. At the same time, compared with VCSEL, HSCEL has the advantages of excellent beam quality, excellent polarization, and high signal-to-noise ratio. Compared with EEL, HSCEL has the advantages of high power, large output aperture, and simple manufacturing process. HCSEL has the characteristics of long cavity, large gain, low-cost mass production, simple packaging form, small wavelength temperature drift, ultra-high single tube power, large output aperture, narrow spectral linewidth, excellent beam quality, excellent polarization degree, and can be used in It achieves the advantages of high-quality linear squares in a compact package size, and is suitable for 3D sensing, lidar, TOF, laser heating and other fields.

In traditional HCSEL, the grating can usually provide two diffracted beams in opposite directions. However, traditional HCSEL can usually only emit the diffracted beam in one direction provided by the grating, resulting in low light extraction efficiency of HCSEL.

Contents of the invention

Based on this, it is necessary to provide a horizontal cavity surface emitting laser and laser equipment to solve the problem of low light extraction efficiency of traditional HCSEL.

A horizontal cavity surface emitting laser has a light emission direction. The horizontal cavity surface emitting laser includes a grating layer and a mirror layer. The grating layer can emit two diffracted beams with opposite emission directions along the light emission direction. The reflection The mirror layer and the grating layer are arranged sequentially along the light emitting direction, and the reflecting mirror layer is used to reflect at least part of the diffracted light beam emitted from the grating layer that is opposite to the light emitting direction toward the grating layer.

In the above-mentioned horizontal cavity surface emitting laser, a reflector layer is provided on the side of the grating layer facing away from the light emission direction. The reflector layer can reflect at least part of the diffracted beam emitted from the grating layer in the opposite direction to the light emission direction towards the grating layer, so that the beam exits in the direction of the grating layer. It is consistent with the light emission direction, so that it can be emitted as the outgoing light of the horizontal cavity surface emitting laser, which is conducive to making full use of the beam emitted from the grating layer and improving the light utilization efficiency, thereby improving the light extraction efficiency of the horizontal cavity surface emitting laser, and is conducive to improving the horizontal cavity surface Emit the luminous power of lasers and reduce the energy consumption of horizontal cavity surface emitting lasers.

In one embodiment, the horizontal cavity surface emitting laser includes a substrate, an N conductive layer disposed on the substrate, and a P electrode layer disposed on a side of the N conductive layer facing away from the substrate, The grating layer and the mirror layer are provided between the substrate and the P electrode layer. The position of the grating layer and the mirror layer has a high degree of freedom and can be adapted to different manufacturing processes. The mirror layer is located in the layer structure of the horizontal cavity surface emitting laser, which not only improves the light extraction efficiency but also helps to compress the horizontal cavity surface emission. Laser size.

In one embodiment, the light emitting direction is directed from the grating layer to the P electrode layer, and the horizontal cavity surface emitting laser further includes: P-type contact layer, P-type doped cladding layer, P-type doped light confinement layer, active layer, N-type doped light confinement layer and N-type doped cladding layer, the grating layer is emitted from the horizontal cavity surface One or more layers in the laser are formed adjacent to the P electrode layer. The grating layer is formed by one or more layers adjacent to the P electrode layer, so that the manufacturing process of the grating layer can be adapted to the manufacturing process of the horizontal cavity surface emitting laser, and the difficulty of designing and manufacturing the horizontal cavity surface emitting laser is reduced.

In one embodiment, the mirror layer is provided between the N conductive layer and the substrate. With this arrangement, the mirror layer can be generated on the substrate, which is beneficial to reducing the difficulty of design and manufacturing.

In one embodiment, the light emission direction is directed from the grating layer to the N conductive layer, and the horizontal cavity surface emitting laser further includes a P-type electrode disposed on the side of the P electrode layer facing the N conductive layer. Contact layer, the grating layer and the mirror layer are provided between the P-type contact layer and the N conductive layer. With such an arrangement, the grating layer and the mirror layer can well adapt to the structural design and manufacturing process of the horizontal cavity surface emitting laser, and the arrangement position has a high degree of freedom.

In one embodiment, the horizontal cavity surface emitting laser further includes a P-type doped cladding layer, a P-type doped light confinement layer, and a P-type doped light confinement layer that are sequentially arranged in the direction in which the P-type contact layer points to the N conductive layer. An active layer, an N-type doped optical confinement layer and an N-type doped cladding layer. The grating layer is directed from the P-type contact layer to a side of the N conductive layer and adjacent to the P-type contact layer. A layer or multi-layer structure is formed. The grating layer is formed by one or more layers adjacent to the P-type contact layer, so that the manufacturing process of the grating layer can be adapted to the manufacturing process of the horizontal cavity surface emitting laser, and the difficulty of designing and manufacturing the horizontal cavity surface emitting laser is reduced. .

In one embodiment, the mirror layer is provided between the P-type doped cladding layer and the P-type contact layer. With this arrangement, the mirror layer can grow after etching the grating layer, and can be well adapted to the manufacturing process of the horizontal cavity surface emitting laser and the grating layer, which is beneficial to reducing the difficulty of designing and manufacturing the horizontal cavity surface emitting laser.

In one embodiment, the P electrode layer is provided on the periphery of the P-type contact layer, or covers the surface of the P-type contact layer facing away from the substrate; and/or,

The horizontal cavity surface emitting laser also includes an N electrode layer located on a side of the substrate facing away from the N conductive layer. The N electrode layer covers the surface of the substrate or is located on the periphery of the substrate. ;and / or,

The N conductive layer and the substrate partially extend outside the P electrode layer. The horizontal cavity surface emitting laser also includes an N electrode layer. The N electrode layer is provided on the N conductive layer facing away from the substrate. One side of the bottom, and is located at the portion of the N conductive layer extending to the outside of the P electrode layer. Such an arrangement can adapt to front-light-emitting, back-light-emitting, and different packaging types of horizontal cavity surface-emitting lasers, thereby improving the applicability of horizontal-cavity surface-emitting lasers.

In one embodiment, the grating layer is formed from any one or more layer structures in the horizontal cavity surface emitting laser; and/or,

The reflector layer is disposed between any two layer structures on the side of the grating layer facing away from the light emission direction. The arrangement of the grating layer and the mirror layer has a high degree of freedom and can adapt to the structure and manufacturing process of the horizontal cavity surface emitting laser, which is beneficial to reducing the difficulty of designing and manufacturing the horizontal cavity surface emitting laser.

In one embodiment, the grating layer includes a second-order or higher-order Bragg grating, and/or includes a second-order or higher-order photonic crystal; and/or,

The mirror layer includes distributed Bragg mirrors and/or photonic crystal structures. The type design of the grating layer and the mirror layer is beneficial to improving the performance of the horizontal cavity surface emitting laser.

A laser device includes the horizontal cavity surface emitting laser as described in any of the above embodiments. When the above-mentioned horizontal cavity surface emitting laser is used in a laser device, the grating layer and the mirror layer in the horizontal cavity surface emitting laser cooperate to increase the luminous power of the laser device and reduce the energy consumption of the laser device.

Description of the drawings

Figure 1 is a schematic structural diagram of a horizontal cavity surface emitting laser in some embodiments.

Figure 2 is a schematic structural diagram of a horizontal cavity surface emitting laser in other embodiments.

Figure 3 is a schematic diagram of the optical paths of two diffracted beams with opposite exit directions from the grating layer in some embodiments.

Figure 4 is a schematic structural diagram of a horizontal cavity surface emitting laser in some embodiments.

Figure 5 is a schematic structural diagram of a horizontal cavity surface emitting laser in which the grating layer is a photonic crystal in some embodiments.

Reference signs:

10. Horizontal cavity surface emitting laser; 101. Substrate; 102. N conductive layer; 103. N-type doped cladding layer; 104. N-type doped optical confinement layer; 105. Active layer; 106. P-type doping Light confinement layer; 107. P-type doped cladding layer; 108. P-type contact layer; 109. Grating layer; 110. Reflector layer; 111. P electrode layer; 112. N electrode layer; 113. Insulating layer.

Detailed ways

In order to make the above objects, features and advantages of the present application more obvious and easy to understand, the specific implementation modes of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described here. Those skilled in the art can make similar improvements without violating the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

In the description of this application, it should be understood that if the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", " "Front", "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inside", "Outside", "Clockwise", "Counterclockwise", "Axis", "radial", "circumferential", etc., the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating Or it is implied that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be construed as a limitation on the present application.

In addition, if the terms "first" and "second" appear, these terms are used for descriptive purposes only and cannot be understood as indicating or implying the relative importance or implicitly indicating the quantity of the indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise expressly and specifically limited.

In this application, unless otherwise expressly stated and limited, if the terms "installation", "connection", "connection", "fixing", etc. appear, these terms should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection, or it can be integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two components. or the interaction between two elements, unless otherwise expressly limited. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

In this application, unless otherwise explicitly stated and limited, if a first feature is "on" or "below" a second feature or similar descriptions, the meaning may be that the first and second features are in direct contact, or The first and second characteristics are in indirect contact through an intermediary. Furthermore, the terms "above", "above" and "above" the first feature is above the second feature may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "below" and "beneath" the first feature to the second feature may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature has a smaller horizontal height than the second feature.

It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. If an element is said to be "connected" to another element, it can be directly connected to the other element or there may also be intervening elements present. If present, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and are not meant to be exclusive. implementation.

Please refer to Figures 1 and 2. Figures 1 and 2 are respectively schematic structural diagrams of a horizontal cavity surface emitting laser 10 in different embodiments. The horizontal cavity surface emitting laser 10 provided in this application can emit laser and can be used in 3D sensing, lidar, TOF, laser heating and other fields. In some embodiments, the horizontal cavity surface emitting laser 10 includes a substrate 101, an N conductive layer 102, an N-type doped cladding layer 103, an N-type doped optical confinement layer 104, and a quantum well or quantum dot active layer arranged in sequence. 105. P-type doped light confinement layer 106, P-type doped cladding layer 107 and P-type contact layer 108. The horizontal cavity surface emitting laser 10 has a light emitting direction (the direction of the dotted arrow shown in Figure 1). The horizontal cavity surface emitting laser 10 can emit light along the light emitting direction. The horizontal cavity surface emitting laser 10 includes but is not limited to front light emitting or back light emitting. Referring to FIG. 1 , when the horizontal cavity surface emitting laser 10 emits light from the front, the light emission direction can be directed from the substrate 101 to the P-type contact layer 108 . In other words, the surface of the P-type contact layer 108 facing away from the substrate 101 can be regarded as horizontal. The light exit surface of the cavity surface emitting laser 10. Referring to FIG. 2 , when the horizontal cavity surface emitting laser 10 emits light from the back, the light emission direction can be from the P-type contact layer 108 to the substrate 101 . In other words, the surface of the substrate 101 facing away from the P-type contact layer 108 can be regarded as horizontal. The light exit surface of the cavity surface emitting laser 10. The horizontal cavity surface emitting laser 10 may also be provided with a grating layer 109 . The grating layer 109 can emit a diffracted beam in the same direction as the light emission, forming the emitted light of the horizontal cavity surface emitting laser 10 .

As shown in Figure 1 and Figure 3, it should be noted that the grating layer in a traditional horizontal cavity surface emitting laser can usually emit two diffracted beams with opposite directions. One of the diffracted beams is emitted from the grating layer along the light emitting direction, and then The horizontal cavity surface emitting laser is emitted from the horizontal cavity surface emitting laser to form the emitted light of the horizontal cavity surface emitting laser. Another type of diffracted beam emerges from the grating layer in an opposite direction to the light emitting direction. The diffracted beam whose emitting direction is opposite to the light emitting direction usually cannot form the emitted light of a horizontal cavity surface emitting laser, resulting in this kind of diffracted beam being wasted and reducing the horizontal cavity surface. The light extraction efficiency of the emitting laser can easily cause the luminous power of the horizontal cavity surface emitting laser to decrease, and lead to an increase in the energy consumption of the horizontal cavity surface emitting laser under the same luminous power.

In order to solve the above problems, in some embodiments, the horizontal cavity surface emitting laser 10 provided by the present application also includes a mirror layer 110. The mirror layer 110 and the grating layer 109 are arranged sequentially along the light emission direction. The mirror layer 110 can be regarded as It is provided on the side of the grating layer 109 facing away from the light emitting direction. The mirror layer 110 is used to reflect at least part of the diffracted light beam that is opposite to the light emission direction from the grating layer 109 toward the grating layer 109 to deflect the direction of the light beam so that the direction of the light beam is the same as the light emission direction, thereby forming a horizontal cavity surface emission. The emitted light of the laser 10 enables the two diffracted beams in opposite directions provided by the grating layer 109 to be utilized.

In the above-mentioned horizontal cavity surface emitting laser 10, a mirror layer 110 is provided on the side of the grating layer 109 facing away from the light emission direction. The mirror layer 110 can reflect at least part of the diffracted beam emitted from the grating layer 109 in the opposite direction to the light emission direction toward the grating layer 109. , so that the exit direction of the light beam is consistent with the light exit direction, so that it can be emitted as the exit light of the horizontal cavity surface emitting laser 10, which is conducive to making full use of the light beam emitted from the grating layer 109, improving the light utilization efficiency, thereby improving the performance of the horizontal cavity surface emitting laser 10 The light extraction efficiency is beneficial to improving the luminous power of the horizontal cavity surface emitting laser 10 and reducing the energy consumption of the horizontal cavity surface emitting laser 10 .

In some embodiments, the grating layer 109 is formed by etching any one or more layers in the horizontal cavity surface emitting laser 10 . For example, the grating layer 109 can be formed from the P-type contact layer 108 to the N-type doped cladding layer 103 . It can be formed in any layer, or it can be formed by a three-layer structure of P-type contact layer 108, P-type doped cladding layer 107, and P-type doped light confinement layer 106, or it can be formed by P-type doped cladding layer 107, P-type doped light confinement layer 106. The stray light limiting layer 106 is formed by a two-layer structure. Of course, it can also be formed by any other adjacent two-layer, three-layer or other number of layer structures. In some embodiments, the grating layer 109 may be a second-order or higher-order Bragg grating, which can effectively provide two diffracted beams in two opposite directions parallel to the light emission direction. In this application, higher order can be understood as a higher order above the second order. Referring to Figure 5, in other embodiments, the grating layer 109 can also be a second-order or higher-order photonic crystal. In the embodiments shown in Figures 2 and 4, the grating layer 109 is not limited to a Bragg grating or a photonic crystal. , of course, the grating layer 109 can also include a Bragg grating and a photonic crystal at the same time. The type of the grating layer 109 is not specifically limited in this application, as long as the grating layer 109 can emit two light beams in opposite directions along the light emitting direction.

In some embodiments, the mirror layer 110 is provided between any two layer structures on the side of the grating layer 109 facing away from the light emitting direction, such as between the N conductive layer 102 and the substrate 101 or the P-type contact layer 108 and the P-type doped cladding layer 107. Of course, the mirror layer 110 can also be provided between any other two layer structures. In some embodiments, the mirror layer 110 can be a distributed Bragg mirror or a photonic crystal structure with good reflective properties. The mirror layer 110 can be a semiconductor material. The mirror layer 110 can be formed on any surface by epitaxial growth. The layer-by-layer structure is conducive to adapting to the manufacturing process of the horizontal cavity surface emitting laser 10, and provides good reflection performance, effectively improving the light extraction efficiency.

In some embodiments, the horizontal cavity surface emitting laser 10 further includes a P electrode layer 111 and an N electrode layer 112. The P electrode layer 111 can be provided on the side of the P-type contact layer 108 facing away from the substrate 101, and is in contact with the P-type contact layer 108. The layer 108 has ohmic contact conduction, and the N electrode layer 112 can be electrically connected to the N conductive layer 102. The horizontal cavity surface emitting laser 10 can apply current to the P electrode layer 111 and the N electrode layer 112, so that the current is injected from the P type contact layer 108. The horizontal cavity surface emitting laser 10 causes the horizontal cavity surface emitting laser 10 to emit light. In some embodiments, when the horizontal cavity surface emitting laser 10 emits light from the front, the P electrode layer 111 can be provided at the periphery of the P-type contact layer 108 so as not to block the light emission of the horizontal cavity surface emitting laser 10 . The N electrode layer 112 may be disposed on a side of the substrate 101 facing away from the N conductive layer 102 and cover the surface of the substrate 101 . Of course, depending on the type of the horizontal cavity surface emitting laser 10, the N electrode layer 112 and the P electrode layer 111 can also be arranged in other ways. Referring to FIG. 4 , in some embodiments, the N conductive layer 102 and the substrate 101 partially extend outside the P electrode layer 111 , and the N electrode layer 112 is provided on the side of the N conductive layer 102 facing away from the substrate 101 , and is provided The N conductive layer 102 extends to the portion outside the P electrode layer 111 . Referring to FIG. 2 , in some embodiments, when the horizontal cavity surface emitting laser 10 emits light from the back, the P electrode layer 111 can cover the surface of the P-type contact layer 108 facing away from the substrate 101 , and the N electrode layer 112 can be disposed on The periphery of the surface of the substrate 101 faces away from the P-type contact layer 108 so as not to block the light output of the horizontal cavity surface emitting laser 10 . It can be understood that in the embodiments shown in Figures 1 and 2, the substrate 101 is provided between the N electrode layer 112 and the N conductive layer 102. The substrate 101 can be a doped semiconductor material. In Figure 4 In the illustrated embodiment, substrate 101 may be any suitable insulating or non-insulating material.

In some embodiments, the horizontal cavity surface emitting laser 10 may further include an insulating layer 113 that covers at least part of the surface of the horizontal cavity surface emitting laser to provide protection for the horizontal cavity surface emitting laser 10. The P electrode layer 111 and N The electrode layer 112 can penetrate the insulating layer 113 to be electrically connected to the P-type contact layer 108 or the N conductive layer 102 .

In some embodiments, the grating layer 109 and the mirror layer 110 may be disposed between the N conductive layer 102 and the P electrode layer 111 . Further, as shown in FIGS. 1 and 4 , when the light emission direction is from the grating layer 109 to the P electrode layer 111 , that is, when the horizontal cavity surface emitting laser 10 emits light from the front, the grating layer 109 is connected to the P electrode layer 111 from the horizontal cavity surface emitting laser 10 . The electrode layer 111 is formed of one or more adjacent layers, for example, a P-type contact layer 108, or a P-type contact layer 108, a P-type doped cladding layer 107 and a P-type doped light confinement layer 106. Layers of structure come together. The grating layer 109 is formed by one or more layers adjacent to the P electrode layer 111 , so that the manufacturing process of the grating layer 109 can be adapted to the manufacturing process of the horizontal cavity surface emitting laser 10 , and the manufacturing process of the horizontal cavity surface emitting laser 10 can be reduced. Design and manufacturing difficulty. In this embodiment, the mirror layer 110 can be disposed between the N conductive layer 102 and the substrate 101, so that the substrate 101 can be used to better generate the mirror layer 110 and reduce the design and manufacturing of the horizontal cavity surface emitting laser 10. Difficulty.

In the embodiments shown in FIG. 1 and FIG. 4 , the mirror layer 110 can be prepared by epitaxial growth on the substrate 101 first, and multi-layer structures such as the N-type doped cladding layer 103 to the P-type contact layer 108 can be grown. Then, on the side of the P-type contact layer 108 facing away from the substrate 101, the P-type contact layer 108 or multiple layers such as the P-type contact layer 108, the P-type doped cladding layer 107 and the P-type doped light confinement layer 106 are The structure is etched to form a grating layer 109, which covers the insulating layer 113. The insulating layer 113 is etched to expose the location of the N electrode layer 112 or the P electrode layer 111, and then the N electrode layer 112 and the P electrode layer 111 are provided. It can be seen that the mirror layer 110 and the grating layer 109 are well adapted to the structure and manufacturing process of the horizontal cavity surface emitting laser 10 , which is conducive to simplifying the manufacturing process and reducing the difficulty of design and manufacturing.

Referring to FIG. 2 , in some embodiments, when the light emission direction is from the grating layer 109 to the N conductive layer 102 , that is, when the horizontal cavity surface emitting laser 10 emits light from the back, the grating layer 109 and the mirror layer 110 are disposed at the P-type contact Between the layer 108 and the N conductive layer 102, the grating layer 109 and the mirror layer 110 are arranged with a high degree of freedom and will not affect the contact conduction between the P-type contact layer 108 and the P electrode layer 111, allowing smooth current injection. Cavity surface emitting laser 10. Further, in some embodiments, the grating layer 109 is formed of one or more layer structures on the side of the P-type contact layer 108 facing the N conductive layer 102 and adjacent to the P-type contact layer 108. For example, the grating layer 109 is formed of The P-type doped cladding layer 107 is formed, or is formed by the P-type doped cladding layer 107 and the P-type doped light confinement layer 106 . In this embodiment, the mirror layer 110 may be disposed between the P-type doped cladding layer 107 and the P-type contact layer 108 . With this arrangement, the grating layer 109 and the mirror layer 110 can be well adapted to the structure and installation process of the horizontal cavity surface emitting laser 10 , which is conducive to simplifying the preparation process and reducing the design and manufacturing difficulty of the horizontal cavity surface emitting laser 10 .

In the embodiment shown in FIG. 2 , a multi-layer structure from the N conductive layer 102 to the P-type doped cladding layer 107 may be first grown on the substrate 101 by epitaxial growth, and then the P-type doped cladding layer 107 A layer facing away from the substrate 101 is etched to form a grating on the P-type doped cladding layer 107 or the P-type doped cladding layer 107 and the P-type doped light confinement layer 106, and then a grating is formed on the back side of the P-type doped cladding layer 107. The mirror layer 110 and the P-type contact layer 108 are prepared by epitaxial growth toward one side of the substrate 101, and then the insulating layer 113 is provided, and then the P electrode layer 111 and the N electrode layer 112 are provided. It can be seen that the mirror layer 110 and the grating layer 109 are well adapted to the structure and manufacturing process of the horizontal cavity surface emitting laser 10 , which is conducive to simplifying the manufacturing process and reducing the difficulty of design and manufacturing.

In some embodiments, the projection of the reflector on the grating layer 109 along the light emitting direction covers the grating layer 109. For example, the size of the reflecting mirror layer 110 in the direction perpendicular to the light emitting direction is greater than or equal to the grating layer 109, as shown in FIGS. 1 and 1 In the embodiment shown in FIG. 2 , the mirror layer 110 may overlap with the grating layer 109 . In the embodiment shown in FIG. 4 , the mirror layer 110 may overlap with the N conductive layer 102 and have a larger size than the grating layer 109 . Such an arrangement can reflect light to the maximum extent to form the emitted light of the horizontal cavity surface emitting laser 10 , which is beneficial to improving the light extraction efficiency of the horizontal cavity surface emitting laser 10 .

This application also provides a laser device, including a housing and a horizontal cavity surface emitting laser 10 as described in any of the above embodiments. The horizontal cavity surface emitting laser 10 is provided in the housing. The housing may be provided with a light outlet. The horizontal cavity The laser light emitted by the surface-emitting laser 10 can be emitted from the light exit hole. According to different luminous power requirements, different numbers of horizontal cavity surface emitting lasers 10 can be provided in the laser equipment. For example, multiple horizontal cavity surface emitting lasers 10 arranged in an array can be provided. Laser equipment can be used in 3D sensing, lidar, TOF, laser heating and other fields. Laser equipment includes but is not limited to laser sensors, lidar, three-dimensional laser projection devices, laser heating equipment and other suitable devices. When the above-mentioned horizontal cavity surface emitting laser 10 is used in a laser device, the grating layer 109 and the mirror layer 110 in the horizontal cavity surface emitting laser 10 cooperate to increase the luminous power of the laser device and reduce the energy consumption of the laser device.

The technical features of the above-described embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, All should be considered to be within the scope of this manual.

The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims (11)

1. A horizontal cavity surface emitting laser, characterized in that it has a light emitting direction. The horizontal cavity surface emitting laser includes a grating layer and a mirror layer. The grating layer can emit two kinds of light with opposite emission directions along the light emitting direction. Diffracted light beam, the reflecting mirror layer and the grating layer are arranged in sequence along the light emitting direction, and the reflecting mirror layer is used to direct at least part of the diffracted light beam emitted by the grating layer opposite to the light emitting direction toward the grating. layer reflection. 2. The horizontal cavity surface emitting laser according to claim 1, wherein the horizontal cavity surface emitting laser includes a substrate, an N conductive layer provided on the substrate, and an N conductive layer provided on the back side of the N conductive layer. On the P electrode layer facing the substrate side, the grating layer and the mirror layer are provided between the substrate and the P electrode layer. 3. The horizontal cavity surface emitting laser according to claim 2, characterized in that the light emission direction is directed from the grating layer to the P electrode layer, and the horizontal cavity surface emitting laser further includes a layer in the P electrode layer. A P-type contact layer, a P-type doped cladding layer, a P-type doped light confinement layer, an active layer, an N-type doped light confinement layer and an N-type doped cladding layer arranged in sequence in the direction pointing to the N conductive layer , the grating layer is formed by one or more layer structures adjacent to the P electrode layer in the horizontal cavity surface emitting laser. 4. The horizontal cavity surface emitting laser according to claim 3, wherein the mirror layer is provided between the N conductive layer and the substrate. 5. The horizontal cavity surface emitting laser according to claim 2, characterized in that the light emission direction is directed from the grating layer to the N conductive layer, and the horizontal cavity surface emitting laser further includes a device located on the P electrode. The P-type contact layer faces the side of the N conductive layer, and the grating layer and the mirror layer are provided between the P-type contact layer and the N conductive layer. 6. The horizontal cavity surface emitting laser according to claim 5, characterized in that, the horizontal cavity surface emitting laser further includes P-type doped lasers arranged sequentially in the direction in which the P-type contact layer points to the N conductive layer. Hybrid cladding layer, P-type doped light confinement layer, active layer, N-type doped light confinement layer and N-type doped cladding layer, the grating layer faces from the P-type contact layer to the side of the N conductive layer And one or more layer structures adjacent to the P-type contact layer are formed. 7. The horizontal cavity surface emitting laser according to claim 6, wherein the mirror layer is provided between the P-type doped cladding layer and the P-type contact layer. 8. The horizontal cavity surface emitting laser according to any one of claims 3 to 7, characterized in that the P electrode layer is provided on the periphery of the P-type contact layer, or covers the back side of the P-type contact layer. the surface of the substrate; and/or, The horizontal cavity surface emitting laser also includes an N electrode layer located on a side of the substrate facing away from the N conductive layer. The N electrode layer covers the surface of the substrate or is located on the periphery of the substrate. ;and / or, The N conductive layer and the substrate partially extend outside the P electrode layer. The horizontal cavity surface emitting laser also includes an N electrode layer. The N electrode layer is provided on the N conductive layer facing away from the substrate. One side of the bottom, and is located at the portion of the N conductive layer extending to the outside of the P electrode layer. 9. The horizontal cavity surface emitting laser according to any one of claims 1 to 7, characterized in that the grating layer is formed by any one or more layer structures in the horizontal cavity surface emitting laser; and/or , The reflector layer is disposed between any two layer structures on the side of the grating layer facing away from the light emission direction. 10. The horizontal cavity surface emitting laser according to any one of claims 1 to 7, wherein the grating layer includes a second-order or higher-order grating, and/or includes a second-order or higher-order photonic crystal; and /or, The mirror layer includes distributed Bragg mirrors and/or photonic crystal structures. 11. A laser device, characterized by comprising the horizontal cavity surface emitting laser according to any one of claims 1 to 10.