CN117038430A - Manufacturing method of inclined surface of wafer edge - Google Patents
Manufacturing method of inclined surface of wafer edge Download PDFInfo
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- CN117038430A CN117038430A CN202311019775.9A CN202311019775A CN117038430A CN 117038430 A CN117038430 A CN 117038430A CN 202311019775 A CN202311019775 A CN 202311019775A CN 117038430 A CN117038430 A CN 117038430A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 140
- 239000007788 liquid Substances 0.000 claims abstract description 67
- 239000003814 drug Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000007921 spray Substances 0.000 claims description 34
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 abstract description 4
- 238000003486 chemical etching Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 41
- 230000007547 defect Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
The invention provides a manufacturing method of an inclined surface of a wafer edge, which comprises the following steps: step 1: moving the nozzle to a wafer center position L1; step 2: a plurality of etching points are arranged on two sides of a wafer center position L1, firstly, a nozzle is aligned with the wafer center position L1 to discharge liquid medicine so that the liquid medicine is sprayed on the wafer center position L1, then, the nozzle sequentially discharges the liquid medicine to the plurality of etching points of the wafer in the sequence from the nearest etching point of L1 to the farthest etching point so that the etching depths of L1 to N are from shallow to deep, thereby forming chamfers on the surface of the wafer, and N represents the nearest etching point of L1 to the farthest etching point. The beneficial effects of the invention are as follows: the invention replaces the existing mechanical processing and laser cutting modes by a chemical etching method, realizes quick and good processing of the wafer chamfer, and solves the technical problems of broken pieces, poor uniformity, foreign matter pollution and the like in the prior art.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a manufacturing method of an inclined surface of a wafer edge.
Background
Chamfering the wafer is a commonly used technique at present, and has the following three benefits:
1. prevent wafer edge chipping. During the process of manufacturing and using the wafer, the wafer edge is often broken due to the impact of a mechanical arm, etc., so as to form a stress concentration area. These areas of stress concentration may cause the wafer to constantly release contaminant particles during use, thereby affecting the yield of the product.
2. Preventing concentration of thermal stress. When the wafer is used, countless high-temperature processes such as oxidation, diffusion and the like are carried out, dislocation and stacking fault defects are generated when the thermal stress generated in the processes exceeds the strength of a silicon lattice, and the edge rounding can prevent the defects from being generated at the edge.
3. The flatness of the epitaxial layer and the photoresist layer at the wafer edge is increased. In the epitaxial process, the growth rate of the acute angle region may be higher than that of the plane, and thus, protrusions may be easily generated at the edge with a wafer without being rounded. Also, when photoresist is applied using a spin coater, the photoresist solution may accumulate at the wafer edges, and these uneven edges may affect the accuracy of the focusing of the mask.
The current manufacturing method of the wafer edge chamfer or the inclined plane comprises the following steps:
1. grinding by using a cutter wheel;
2. polishing with a polishing pad;
3. laser cutting is used.
The existing technology has the following technical defects in the processing of wafers:
1. breaking the sheet;
2. poor uniformity;
3. contamination by foreign matter, and the like.
Disclosure of Invention
The invention provides a manufacturing method of an inclined surface of a wafer edge, which comprises the following steps:
step 1: moving the nozzle to a wafer center position L1;
step 2: a plurality of etching points are arranged on two sides of a wafer center position L1, firstly, a nozzle is aligned with the wafer center position L1 to discharge liquid medicine so that the liquid medicine is sprayed on the wafer center position L1, then, the nozzle sequentially discharges the liquid medicine to the plurality of etching points of the wafer in the sequence from the nearest etching point of L1 to the farthest etching point so that the etching depths of L1 to N are from shallow to deep, thereby forming chamfers on the surface of the wafer, and N represents the nearest etching point of L1 to the farthest etching point.
As a further improvement of the present invention, in the step 2, the nozzle may move back and forth for spraying the chemical solution multiple times at each etching point, and the moving speed of the nozzle may be from high to low at multiple etching points from L1 to N.
As a further improvement of the present invention, the step 2 includes:
step A: the center position of the wafer is a first etching point L1, the etching point from the nearest etching point to the farthest etching point of the first etching point L1 comprises a second etching point L2 and a third etching point L3, the nozzle moves back and forth for a plurality of times at the first etching point L1 to spray liquid medicine, and the moving speed of the nozzle at the position of the first etching point L1 is S1; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at the second etching point L2, and the moving speed of the spray nozzle at the position of the second etching point L2 is S2; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a third etching point L3, and the moving speed of the spray nozzle at the position of the third etching point L3 is S3; s1> S2> S3.
As a further improvement of the present invention, the step 2 further includes:
and (B) step (B): the etching point closest to the L1 and the etching point farthest from the L1 further comprise a fourth etching point L4, a fifth etching point L5 and a sixth etching point L6, wherein the fourth etching point L4 is positioned at one side of the third etching point L3, the spray nozzle moves back and forth for a plurality of times to spray liquid medicine at the fourth etching point L4, and the moving speed of the spray nozzle at the position of the fourth etching point L4 is S4; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a fifth etching point L5, and the moving speed of the spray nozzle at the position of the fifth etching point L5 is S5; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a sixth etching point L6, and the moving speed of the spray nozzle at the position of the sixth etching point L6 is S6; s4> S5> S6.
As a further improvement of the present invention, the concentration of the liquid medicine ejected in the step B is greater than the concentration of the liquid medicine ejected in the step a.
As a further improvement of the present invention, in the step 2, at a plurality of etching points of L1 to N, the liquid medicine discharging time is from short to long, the turntable speed is from slow to fast, the liquid medicine discharging amount is from less to more, and the liquid medicine depth/temperature is from low to high; the wafer is mounted on the turntable.
As a further improvement of the invention, the nozzle is arranged on the swing arm, and the nozzle is driven to move by the swing arm.
As a further improvement of the invention, the nozzle comprises a nozzle body, wherein the nozzle body is provided with two input ports, and a flow control valve is arranged at the position of the input ports;
threads are arranged in the nozzle body;
the inside of the nozzle body is provided with a temperature control module which is used for controlling the temperature of the liquid medicine;
the two flow control valves are respectively a first flow control valve and a second flow control valve, the two input ports are respectively a first input port and a second input port, the first flow control valve is arranged at the position of the first input port, and the second flow control valve is arranged at the position of the second input port.
As a further improvement of the invention, the liquid medicine is formed by mixing two solutions, wherein the first solution is acid solution or alkali solution, and the second solution is deionized water.
As a further improvement of the invention, the first solution is nitric acid and hydrofluoric acid, the wafer is made of silicon material, the nitric acid reacts with silicon to form SiO2, the SiO2 reacts with hydrofluoric acid to form fluosilicic acid which is dissolved in water, and the mass percentage of the liquid medicine is as follows: 68.9% of nitric acid, 0.8% of hydrofluoric acid and 30.3% of deionized water.
The beneficial effects of the invention are as follows: the invention replaces the existing mechanical processing and laser cutting modes by a chemical etching method, realizes quick and good processing of the wafer chamfer, and solves the technical problems of broken pieces, poor uniformity, foreign matter pollution and the like in the prior art.
Drawings
FIG. 1 is a schematic process diagram of step A;
FIG. 2 is a schematic process diagram of step B;
fig. 3 is a schematic structural view of the nozzle.
Detailed Description
The invention discloses a manufacturing method of an inclined surface of a wafer edge, which comprises the following steps:
step 1: moving the nozzle to a wafer center position L1;
step 2: a plurality of etching points are arranged on two sides of a wafer center position L1, firstly, a nozzle is aligned with the wafer center position L1 to discharge liquid medicine so that the liquid medicine is sprayed on the wafer center position L1, then, the nozzle sequentially discharges the liquid medicine to the plurality of etching points of the wafer in the sequence from the nearest etching point of L1 to the farthest etching point so that the etching depths of L1 to N are from shallow to deep, thereby forming chamfers on the surface of the wafer, and N represents the nearest etching point of L1 to the farthest etching point.
In the step 2, the nozzle can move back and forth for spraying the liquid medicine for a plurality of times at each etching point, and the moving speed of the nozzle is from high to low at a plurality of etching points from L1 to N. As a preferred embodiment of the present invention, the step 2 includes:
step A: as shown in fig. 1, the center position of the wafer is a first etching point L1, the etching point closest to L1 to the etching point farthest from L1 comprises a second etching point L2 and a third etching point L3, the nozzle moves back and forth for multiple times at the first etching point L1 to spray the liquid medicine, and the moving speed of the nozzle at the first etching point L1 is S1; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at the second etching point L2, and the moving speed of the spray nozzle at the position of the second etching point L2 is S2; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a third etching point L3, and the moving speed of the spray nozzle at the position of the third etching point L3 is S3; s1> S2> S3. The etching depth at the first etching point L1 is D1, the etching depth at the second etching point L2 is D2, and the etching depth at the third etching point L3 is D3, because the moving speed of the nozzle is from fast to slow, the contact time of the liquid medicine at the first etching point L1 is shorter, the wafer etching depth D1 is shallower, the moving speed S2 at the second etching point L2 is slightly slower, the wafer etching depth D2 is deeper, the moving speed S3 at the third etching point L3 is slower, the wafer etching depth D3 is deeper, and D1< D2< D3. In order to increase the wafer arc effect example angle, the step A can be repeated for a plurality of times.
The step 2 further includes:
and (B) step (B): as shown in fig. 2, the etching point closest to the etching point L1 to the farthest etching point further includes a fourth etching point L4, a fifth etching point L5, and a sixth etching point L6, the fourth etching point L4 is located at one side of the third etching point L3, the nozzle moves back and forth for multiple times to spray the liquid medicine at the fourth etching point L4, and the moving speed of the nozzle at the position of the fourth etching point L4 is S4; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a fifth etching point L5, and the moving speed of the spray nozzle at the position of the fifth etching point L5 is S5; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a sixth etching point L6, and the moving speed of the spray nozzle at the position of the sixth etching point L6 is S6; s4> S5> S6. The etching depth at the fourth etching point L4 is D4, the etching depth at the fifth etching point L5 is D5, the etching depth at the sixth etching point L6 is D6, the moving speed of the nozzle is from fast to slow, the contact time of the liquid medicine at the fourth etching point L4 is shorter, the wafer etching depth D4 is shallower, the moving speed S5 at the fifth etching point L5 is slightly slower, the wafer etching depth D5 is deeper, the moving speed S6 at the sixth etching point L6 is slower, the wafer etching depth D6 is deeper, and D4< D5< D6. In order to increase the wafer arc effect example angle, step B may be repeated multiple times. D3< D4.
Taking a 12 inch wafer (with the diameter of 300 mm) as an example, the positions from the center point of the L1 wafer to the edge of the L6 wafer are L1:0, L2:25mm, L3:50mm, L4:75mm, L5:100mm and L6:125mm respectively; s1:25mm/sec, S2:21mm/sec, S3:18mm/sec, S4:15mm/sec, S5:14mm/sec, S6:13mm/sec.
The concentration of the chemical liquid discharged in the step B is greater than that discharged in the step a, for example, the concentration of the chemical liquid discharged in the step B is 20% and the concentration of the chemical liquid discharged in the step a is 10%.
As a preferred embodiment of the present invention, in the step 2, the following process parameters are run at a plurality of etching points of L1 to N: parameter 1: the liquid medicine discharge time is from short to long, parameter 2: the turntable speed is from slow to fast, parameter 3: the liquid medicine discharge amount is from small to large, and the parameter is 4: the depth/temperature of the liquid medicine is from low to high. The wafer is arranged on the turntable, the liquid medicine is discharged from the nozzle and moves outwards from the center of the wafer, and the reaction time of the liquid medicine is adjusted by the moving speed, so that the etching depths are different. And because of the corresponding adjustment of the process parameters, different etching depths at different positions are caused, and finally, the chamfer of the wafer edge is formed.
In the invention, the nozzle is arranged on the swing arm, and the nozzle is driven to move by the swing arm.
As shown in fig. 3, the nozzle comprises a nozzle body 1, wherein the nozzle body 1 is provided with at least two input ports, and a flow control valve is arranged at the position of the input ports.
The nozzle body 1 is internally provided with threads.
The inside temperature control module that is equipped with of nozzle body 1 is used for controlling the temperature of liquid medicine. The stable liquid medicine can be heated, the unstable liquid medicine can be mixed, and the temperature control module can be used for rapidly heating the liquid medicine in the nozzle body 1, so that precise temperature control is achieved, the evaporation amount of the liquid medicine is reduced, and the consumption corrosion of a pipeline component is reduced.
As a preferred embodiment of the nozzle, the number of the flow control valves is two, the number of the two flow control valves is a first flow control valve and a second flow control valve, the number of the input ports is two, the number of the two input ports is a first input port 2 and a second input port 3, the first flow control valve is arranged at the position of the first input port 2, and the second flow control valve is arranged at the position of the second input port 3.
As an embodiment of the present invention, the liquid medicine is formed by mixing two solutions, wherein the first solution is an acid solution or an alkali solution (for example, the first solution is pinning acid and hydrofluoric acid), and the second solution is deionized water; the wafer is made of silicon material, nitric acid (HNO 3) and silicon (Si) can react to form SiO2, siO2 is reacted by hydrofluoric acid (HF) to form fluosilicic acid (H2 SiF 6) which is dissolved in water to be taken away, namely, the surface of the silicon can be reacted by the liquid medicine to form chamfer. In this embodiment, the liquid medicine comprises the following components in percentage by mass: 68.9% nitric acid, 0.8% HF, 30.3% deionized water (DI).
Because the screw thread is arranged in the nozzle body 1, after two solutions enter the nozzle body 1, the two solutions can be quickly mixed into a medicinal liquid with the aid of the screw thread.
In the present invention, the flow rates of the first solution and the second solution flowing into the nozzle body 1 can be controlled by the first flow rate control valve and the second flow rate control valve, thereby preparing a chemical solution of a prescribed concentration.
The nozzle of the invention can rapidly correspond to different processes and process problems, and simultaneously assist in developing new processes, shorten the liquid medicine blending time, reduce the liquid medicine test dosage, improve the equipment utilization ratio and reduce the engineering production cost.
The invention replaces the existing mechanical processing and laser cutting modes by a chemical etching method, realizes quick and good processing of the wafer chamfer, and solves the technical problems of broken pieces, poor uniformity, foreign matter pollution and the like in the prior art.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. The manufacturing method of the inclined surface of the wafer edge is characterized by comprising the following steps of:
step 1: moving the nozzle to a wafer center position L1;
step 2: a plurality of etching points are arranged on two sides of a wafer center position L1, firstly, a nozzle is aligned with the wafer center position L1 to discharge liquid medicine so that the liquid medicine is sprayed on the wafer center position L1, then, the nozzle sequentially discharges the liquid medicine to the plurality of etching points of the wafer in the sequence from the nearest etching point of L1 to the farthest etching point so that the etching depths of L1 to N are from shallow to deep, thereby forming chamfers on the surface of the wafer, and N represents the nearest etching point of L1 to the farthest etching point.
2. The method according to claim 1, wherein in the step 2, the nozzle is moved back and forth for spraying the chemical liquid multiple times at each etching point, and the movement speed of the nozzle is from fast to slow at a plurality of etching points L1 to N.
3. The method according to claim 2, wherein the step 2 comprises:
step A: the center position of the wafer is a first etching point L1, the etching point from the nearest etching point to the farthest etching point of the first etching point L1 comprises a second etching point L2 and a third etching point L3, the nozzle moves back and forth for a plurality of times at the first etching point L1 to spray liquid medicine, and the moving speed of the nozzle at the position of the first etching point L1 is S1; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at the second etching point L2, and the moving speed of the spray nozzle at the position of the second etching point L2 is S2; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a third etching point L3, and the moving speed of the spray nozzle at the position of the third etching point L3 is S3; s1> S2> S3.
4. The method according to claim 3, wherein the step 2 further comprises:
and (B) step (B): the etching point closest to the L1 and the etching point farthest from the L1 further comprise a fourth etching point L4, a fifth etching point L5 and a sixth etching point L6, wherein the fourth etching point L4 is positioned at one side of the third etching point L3, the spray nozzle moves back and forth for a plurality of times to spray liquid medicine at the fourth etching point L4, and the moving speed of the spray nozzle at the position of the fourth etching point L4 is S4; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a fifth etching point L5, and the moving speed of the spray nozzle at the position of the fifth etching point L5 is S5; the spray nozzle moves back and forth for spraying the liquid medicine for a plurality of times at a sixth etching point L6, and the moving speed of the spray nozzle at the position of the sixth etching point L6 is S6; s4> S5> S6.
5. The method according to claim 4, wherein the concentration of the chemical solution discharged in the step B is higher than the concentration of the chemical solution discharged in the step A.
6. The method according to claim 1, wherein in the step 2, the liquid medicine discharge time is from short to long, the turntable speed is from slow to fast, the liquid medicine discharge amount is from less to more, and the liquid medicine depth/temperature is from low to high at a plurality of etching points of L1 to N; the wafer is mounted on the turntable.
7. The method of claim 1, wherein the nozzle is mounted on a swing arm, and the nozzle is moved by the swing arm.
8. The manufacturing method according to claim 1, characterized in that the nozzle comprises a nozzle body (1), the nozzle body (1) being provided with two inlet openings, at the location of which a flow control valve is provided; threads are arranged in the nozzle body (1);
a temperature control module is arranged in the nozzle body (1) and used for controlling the temperature of the liquid medicine;
the two flow control valves are respectively a first flow control valve and a second flow control valve, the two input ports are respectively a first input port (2) and a second input port (3), the first flow control valve is arranged at the position of the first input port (2), and the second flow control valve is arranged at the position of the second input port (3).
9. The method according to any one of claims 1 to 8, wherein the liquid medicine is mixed by two solutions, the first solution is an acid solution or an alkali solution, and the second solution is deionized water.
10. The method of claim 9, wherein the first solution is nitric acid and hydrofluoric acid, the wafer is made of silicon material, the nitric acid reacts with silicon to form SiO2, the SiO2 reacts with the hydrofluoric acid to form fluosilicic acid, and the fluosilicic acid is dissolved in water, and the liquid medicine comprises the following components in percentage by mass: 68.9% of nitric acid, 0.8% of hydrofluoric acid and 30.3% of deionized water.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311019775.9A CN117038430A (en) | 2023-08-14 | 2023-08-14 | Manufacturing method of inclined surface of wafer edge |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311019775.9A CN117038430A (en) | 2023-08-14 | 2023-08-14 | Manufacturing method of inclined surface of wafer edge |
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| CN112652530A (en) * | 2020-12-11 | 2021-04-13 | 联合微电子中心有限责任公司 | Method for improving bevel etching yield |
| CN114420539A (en) * | 2021-12-31 | 2022-04-29 | 至微半导体(上海)有限公司 | Wafer cleaning method for effectively controlling edge etching process |
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2023
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|---|---|---|---|---|
| JPH04109528U (en) * | 1991-03-07 | 1992-09-22 | 山形日本電気株式会社 | Etching equipment for semiconductors |
| US6096233A (en) * | 1996-09-24 | 2000-08-01 | Tokyo Electron Limited | Method for wet etching of thin film |
| JP2001135611A (en) * | 1999-11-05 | 2001-05-18 | Nisso Engineering Co Ltd | Device and method for etching semiconductor wafer |
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| KR20070027277A (en) * | 2005-09-06 | 2007-03-09 | 세메스 주식회사 | Apparatus and method for etching an edge of a substrate |
| JP2013065614A (en) * | 2011-09-15 | 2013-04-11 | Pre-Tech At:Kk | Wet etching method of silicon wafer and wet etching device |
| CN112652530A (en) * | 2020-12-11 | 2021-04-13 | 联合微电子中心有限责任公司 | Method for improving bevel etching yield |
| CN114420539A (en) * | 2021-12-31 | 2022-04-29 | 至微半导体(上海)有限公司 | Wafer cleaning method for effectively controlling edge etching process |
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