CN117031237A - Method and system for testing service life of semiconductor device - Google Patents
Method and system for testing service life of semiconductor device Download PDFInfo
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- CN117031237A CN117031237A CN202311288858.8A CN202311288858A CN117031237A CN 117031237 A CN117031237 A CN 117031237A CN 202311288858 A CN202311288858 A CN 202311288858A CN 117031237 A CN117031237 A CN 117031237A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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Abstract
The invention provides a service life testing method and system for a semiconductor device, and relates to the technical field of testing. The method comprises the following steps: comprising the following steps: dividing a plurality of field effect transistors to be tested with the same model into a plurality of batches; respectively placing field effect transistors of a control batch in a control environment; placing field effect transistors of a test batch in a plurality of test environments; applying a first grid voltage and a first drain voltage to the field effect transistor to enable the field effect transistor to operate for a preset period of time; applying a second grid voltage to the field effect transistor, and applying various drain voltages to obtain drain current; and obtaining the predicted service life according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current and the preset duration. According to the invention, the performance degradation condition of the test field effect tube can be determined, the service life of the field effect tube is estimated based on the performance degradation condition, the field effect tube is maintained or replaced when the service life is about to be reached, and the probability of functional failure is reduced.
Description
Technical Field
The present invention relates to the field of testing technologies, and in particular, to a method and a system for testing a service life of a semiconductor device.
Background
In the related art, the service life of semiconductor devices such as field effect transistors is often difficult to predict due to different use environments, so that even if the semiconductor devices are not damaged in the use process, the semiconductor devices have the risk of obviously reducing the performance due to the fact that the service life is reached after a period of use, and further the performance of equipment for mounting the semiconductor devices is reduced and even functions are disabled.
Disclosure of Invention
The invention provides a method and a system for testing the service life of a semiconductor device, which can solve the problem that the service life of a field effect transistor is difficult to estimate.
According to a first aspect of the present invention, there is provided a semiconductor device lifetime test method comprising:
dividing a plurality of field effect transistors to be tested of the same type into a plurality of batches, wherein each batch comprises a plurality of field effect transistors, and the batches comprise a test batch and a control batch;
respectively placing the field effect transistors of the control batch in a control environment, wherein the temperature of the control environment is the preset storage temperature of the field effect transistors;
respectively placing field effect transistors of a plurality of test batches in a plurality of test environments, wherein the temperature of the test environments is higher than the preset storage temperature;
Applying the same first gate voltage and first drain voltage to each batch of field effect transistors respectively, so that each batch of field effect transistors respectively run for a preset time period;
after the preset duration is over, respectively applying the same second grid voltage to each batch of field effect transistors, and respectively applying various drain voltages to obtain drain currents corresponding to the drain voltages;
and obtaining the predicted service life of the field effect transistor according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistors and the preset duration.
According to a second aspect of the present invention, there is provided a semiconductor device life test system comprising:
the dividing module is used for dividing a plurality of field effect transistors to be tested with the same type into a plurality of batches, wherein each batch comprises a plurality of field effect transistors, and the batches comprise a test batch and a control batch;
the first placement module is used for placing the field effect transistors of the control batch in a control environment respectively, wherein the temperature of the control environment is the preset storage temperature of the field effect transistors;
the second placement module is used for placing the field effect transistors of the plurality of test batches in a plurality of test environments respectively, wherein the temperature of the test environments is higher than the preset storage temperature;
The operation module is used for respectively applying the same first grid voltage and the first drain voltage to the field effect transistors in each batch so as to enable the field effect transistors in each batch to respectively operate for a preset time period;
the current module is used for respectively applying the same second grid voltage to each batch of field effect transistors after the preset duration is over, and respectively applying various drain voltages to obtain drain currents corresponding to the drain voltages;
the predicted service life module is used for obtaining the predicted service life of the field effect transistor according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistor and the preset duration.
The technical effects are as follows: according to the invention, the field effect tube to be tested can be divided into a plurality of batches, the temperature of the testing environment where the field effect tube of each batch is positioned and the time length in the testing environment are respectively set, and then the drain voltage and the drain current of the field effect tube can be measured, so that the performance degradation condition of the field effect tube of each batch can be determined, the service life of the field effect tube can be estimated based on the performance degradation condition, and further the field effect tube can be maintained or replaced when the service life is reached in the use process of the field effect tube, so that the probability of the equipment for installing the field effect tube is reduced, and even the function is disabled. When solving the predicted service life, the temperature coefficient and the time coefficient can be solved, and then the predicted service life is solved, when solving the temperature coefficient, the performance degradation degree of the field effect tube of the test group can be determined by testing the slope and intercept change of the constant current characteristic function and the contrast constant current characteristic function, and the accuracy of the solved temperature coefficient can be improved by setting the to-be-determined temperature coefficient in an exponential form capable of representing the accelerated degradation of the performance based on the characteristics of the influence of high temperature on the performance of the field effect tube and fitting the to-be-determined temperature coefficient based on measured data. When solving the time coefficient, the performance degradation degree of the field effect tube of the test group can be determined by testing the change of the slope and the intercept of the constant current characteristic function and the comparison constant current characteristic function, the undetermined time coefficient reflecting the linear relation can be set based on the characteristic of the influence of time on the performance of the field effect tube, and the undetermined time coefficient is fitted based on the measured data, so that the accuracy of the solved time coefficient can be improved. When the predicted service life is solved, the time coefficient or the temperature coefficient and the relation between the performance degradation degree and the use or the temperature of the field effect tube can be utilized to obtain the alternative duration, so that the minimum value of the alternative duration is determined and used as the predicted service life, and the accuracy and objectivity of the predicted service life can be improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed. Other features and aspects of the present invention will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the invention or the solutions of the prior art, the drawings which are necessary for the description of the embodiments or the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other embodiments may be obtained from these drawings without inventive effort to a person skilled in the art,
fig. 1 exemplarily shows a flow diagram of a semiconductor device lifetime test method according to an embodiment of the present invention;
fig. 2 schematically illustrates a block diagram of a semiconductor device lifetime test system in accordance with an embodiment of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme of the invention is described in detail below by specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
Fig. 1 schematically illustrates a flow chart of a method for testing the service life of a semiconductor device according to an embodiment of the present invention, the method including:
step S101, dividing a plurality of field effect transistors to be tested of the same type into a plurality of batches, wherein each batch comprises a plurality of field effect transistors, and the batches comprise a test batch and a control batch;
step S102, respectively placing the field effect transistors of the control batch in a control environment, wherein the temperature of the control environment is the preset storage temperature of the field effect transistors;
step S103, respectively placing a plurality of field effect transistors in a plurality of test environments, wherein the temperature of the test environments is higher than the preset storage temperature;
step S104, the same first grid voltage and the first drain voltage are respectively applied to the field effect transistors in each batch, so that the field effect transistors in each batch respectively run for a preset time period;
step S105, after the preset time period is over, respectively applying the same second grid voltage to each batch of field effect transistors, and respectively applying various drain voltages to obtain drain currents corresponding to the drain voltages;
Step S106, obtaining the predicted service life of the field effect transistor according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistors and the preset time length.
According to the method for testing the service life of the semiconductor device, the field effect tube to be tested can be divided into a plurality of batches, the temperature of the testing environment where the field effect tube of each batch is located and the duration of the time in the testing environment are respectively set, and then the drain voltage and the drain current of the field effect tube can be measured, so that the performance degradation condition of the field effect tube of each batch is determined, the service life of the field effect tube is estimated based on the performance degradation condition, and further the field effect tube can be maintained or replaced when the service life is about to be reached in the use process of the field effect tube, so that the probability of the performance degradation and even the functional failure of equipment for installing the field effect tube is reduced.
According to one embodiment of the invention, after a large number of field effect tubes with the same type are produced, part of the field effect tubes can be selected as the field effect tubes to be tested, and the number of the field effect tubes to be tested is multiple, so that tests can be performed in batches to determine the relationship between the performance reduction and the use time length of the field effect tubes and the temperature, and further the use time length when the performance reduction of the field effect tubes is close to the failure level in the environment with various temperatures can be estimated, namely the service life in the environment with various temperatures can be estimated.
According to an embodiment of the present invention, in step S101, the field effect transistors to be tested may be divided into a plurality of batches, wherein one batch is a reference batch, the other batches are test batches, and the number of field effect transistors in each batch may be the same, or the number of field effect transistors in the reference batch may be smaller than the number of field effect transistors in the test batch.
According to one embodiment of the present invention, in step S102, a plurality of field effect transistors in a control lot may be placed in a control environment, where the temperature of the control environment is a storage temperature preset for the field effect transistors, for example, room temperature of 20-25 ℃, and the present invention is not limited to the storage temperature.
According to an embodiment of the present invention, in step S103, the field effect transistors of the plurality of test batches are respectively placed in the test environments with different temperatures, and the temperature in the test environments is higher than the storage temperature, for example, the temperature of the first test environment where the field effect transistor of the first test batch is located is 30 ℃, the temperature of the second test environment where the field effect transistor of the second test batch is located is 40 ℃, the temperature of the third test environment where the field effect transistor of the third test batch is located is 50 ℃, and so on. Test environments with various temperatures can be set, so that the influence of the temperature on the performance degradation of the field effect transistor can be determined.
According to an embodiment of the present invention, in step S104, the same first gate voltage and the first drain voltage may be applied to each fet, where the first gate voltage may be a voltage capable of making the fet conductive, and the first drain voltage may be a voltage that makes the fet operate in a constant current region, for example, 6V, etc., and specific values of the first gate voltage and the first drain voltage are not limited in the present invention.
According to an embodiment of the present invention, in step S105, each fet may be operated under the action of the first gate voltage and the first drain voltage for a preset period of time, and in an example, the preset period of time for each fet to operate may be different from each other, for example, in the same test lot, a portion of fets are operated under the action of the first gate voltage and the first drain voltage for 24 hours, a portion of fets are operated under the action of the first gate voltage and the first drain voltage for 48 hours, a portion of fets are operated under the action of the first gate voltage and the first drain voltage for 72 hours, and the preset period of time for each fet is not limited by the present invention. And after the preset duration is over, testing the drain voltage and drain current of each batch of field effect transistors respectively.
According to one embodiment of the present invention, a second gate voltage may be applied to the gate of each field effect transistor, the second gate voltage may enable the field effect transistor to be turned on, and the second gate voltage may be equal to the first gate voltage.
According to an embodiment of the present invention, the drain voltages applied to the respective field effect transistors are various, for example, drain voltages of 2V, 4V, 6V, 8V, etc. may be applied, and drain currents corresponding to each drain voltage are obtained, respectively. Each fet may be tested based on the above manner, such that the various drain voltages are applied to each fet, and the drain currents of each fet corresponding to the various drain voltages are measured.
According to an embodiment of the present invention, in step S106, since the temperatures of the test environments in which the field effect transistors are located are different and the preset operating periods are different, performance degradation of the field effect transistors may occur to different extents, the extent of performance degradation of the field effect transistors may be determined based on the above drain voltage and the measured drain current, and a relationship between the extent of performance degradation and the preset operating periods and the temperatures of the test environments in which the field effect transistors are located is determined, so that the service lives of the field effect transistors are predicted based on the relationship.
According to one embodiment of the present invention, step S106 may include: dividing field effect transistors of the same test batch into a plurality of test groups, wherein each test group comprises a plurality of field effect transistors, and the preset time lengths of the field effect transistors of each test group are different; after the operation of each test batch is finished, obtaining a characteristic curve between the drain voltage and the drain current corresponding to each test group according to the drain voltage and the drain current of the field effect transistor of each test group; determining a first conversion voltage, a first conversion current, a second conversion voltage and a second conversion current of characteristic curves of field effect transistors of each test group according to the relation function, wherein the first conversion voltage is the conversion voltage of the characteristic curves of the field effect transistors converted from a variable resistance region to a constant current region, the first conversion current is drain current corresponding to the first conversion voltage, the second conversion voltage is the conversion voltage of the characteristic curves of the field effect transistors converted from the constant current region to a breakdown region, and the second conversion current is drain current corresponding to the second conversion voltage; and determining the predicted service life of the field effect tube according to the first conversion voltage, the first conversion current, the second conversion voltage and the second conversion current of each test group, the preset time length of operation of each test group, the temperature of the test environment and the temperature of the control environment.
According to one embodiment of the present invention, each test lot may be divided into a plurality of test groups, and in an example, the number of field effect transistors included in each test group is the same, and the present invention does not limit the division manner of the test groups. The preset time periods of the field effect transistors of the test groups are different from each other, for example, in a certain test batch, the preset time period of the first test group is 24 hours, the preset time period of the second test group is 48 hours, the preset time period of the third test group is 72 hours, and the like. The preset durations of the test groups of the same serial number may be identical in different test batches, for example, in another test batch, the preset duration of the first test group is also 24 hours, the preset duration of the second test group is also 48 hours, and the preset duration of the third test group is also 72 hours.
According to one embodiment of the present invention, after the preset time period for running the field effect transistors of all the test groups is over, a relationship curve between the drain voltage and the drain current of each field effect transistor can be obtained based on the drain voltage applied to each field effect transistor and the detected drain current, for example, the drain voltage and the drain current of each field effect transistor are fitted to obtain the relationship curve, further, the relationship curves of the field effect transistors belonging to the same test group can be averaged, and the characteristic curve of the test group can be obtained, wherein the characteristic curve can be used for describing the average relationship between the drain voltage and the drain current of the field effect transistor in the group, that is, the average characteristic of the field effect transistor in the group can be described.
According to one embodiment of the invention, a first switching voltage, a first switching current, a second switching voltage and a second switching current of the characteristic curves of the respective test groups may be determined. In the characteristic curve of the field effect transistor, the field effect transistor can be divided into a variable resistance region, a constant current region and a breakdown region, and obvious conversion nodes exist among the three regions. In the variable resistance region, the drain current increases with an increase in the drain voltage, and the relationship between the two approximates a linear relationship; in the constant current region, the drain voltage increases, but the variation amplitude of the drain current is low, even almost unchanged, i.e., the drain current is relatively stable; within the breakdown region, the drain current again increases as the drain voltage increases, but the relationship between the two is not necessarily a linear relationship. Since the test group characteristic curve is used to describe the average characteristics of the field effect transistors within the group, the test group characteristic curve may also be divided into a variable resistance region, a constant current region, and a breakdown region. The voltage value corresponding to the conversion node converted from the variable resistance region to the constant current region is the first conversion voltage, and the current value corresponding to the node is the first conversion current; the voltage value corresponding to the conversion node converted from the constant current region to the breakdown region is the second conversion voltage, and the current value corresponding to the node is the second conversion current.
According to an embodiment of the present invention, a switching node which is switched from the variable resistance region to the constant current region is determined in such a manner that a node at which the change rate of the drain current decreases to a preset change rate threshold value is used as the switching node. The switching node from the constant current region to the breakdown region is determined in such a manner that a node at which the rate of change of the drain current rises to another rate threshold value is regarded as the switching node.
According to the embodiment of the invention, the performance degradation condition of the field effect transistor after running for different time periods under the environments of different temperatures can be determined based on the conversion nodes of each test group, so that the service life of the field effect transistor is estimated.
According to one embodiment of the present invention, determining the predicted lifetime of the fet based on the first switching voltage, the first switching current, the second switching voltage, and the second switching current of each test group, and the preset duration of operation of each test group and the temperature of the test environment in which each test group is located, and the temperature of the control environment, includes: obtaining test constant current characteristic functions of each test group according to the first conversion voltage, the first conversion current, the second conversion voltage and the second conversion current of each test group; obtaining a control constant current characteristic function of the control batch; determining a temperature coefficient according to test constant current characteristic functions of a plurality of test groups with the same running preset duration in different test batches and the control constant current characteristic functions; determining a time coefficient according to the test constant current characteristic functions of a plurality of test groups with different running preset durations in the same test batch and the control constant current characteristic functions; and determining the predicted service life of the field effect tube according to the temperature coefficient and the time coefficient.
According to one embodiment of the invention, the part of the characteristic curve in the constant current area is taken between the nodes corresponding to the first conversion voltage and the first conversion current and between the nodes corresponding to the second conversion voltage and the second conversion current, so as to obtain a test constant current characteristic function, and the connection between the two nodes can be used for solving the test constant current characteristic function.
According to one embodiment of the invention, a comparison cross current characteristic function of a comparison batch can be obtained in a similar manner to a test constant current characteristic function, for example, a relation function between drain voltage and drain current of each field effect transistor in the comparison batch can be obtained and averaged, so as to determine a node from a variable resistance region to a constant current region and a node from the constant current region to a breakdown region in a curve of the averaged relation function, so as to intercept a part between two nodes as the comparison constant current characteristic function, or solve the comparison constant current characteristic function by using a connection between the two nodes.
According to one embodiment of the invention, the test constant current characteristic functions of a plurality of test groups with the same running preset duration in different test batches and the comparison constant current characteristic functions can be compared, so that the influence of temperature on the performance reduction of the field effect transistor is determined under the condition that the running preset durations are consistent, and the temperature coefficient describing the influence is obtained.
According to one embodiment of the present invention, determining a temperature coefficient according to test constant current characteristic functions of a plurality of test groups running for the same preset time period in different test batches and the control constant current characteristic functions includes: determining the relationship between the difference between the test constant current characteristic function and the control constant current characteristic function and the temperature of the test environment in which the test batch is located according to the formula (1) and the formula (2),
（1）
（2）
wherein,for comparison of the slope of the constant-current characteristic function +.>Slope of test constant current characteristic function for test group of preset duration of jth duration running in ith test batch, +.>For the temperature of the test environment in which the ith test batch is located, +.>For the j-th duration, +.>For comparison of the intercept of the constant-current characteristic function +.>For the intercept of the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length,/for the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length>、/>、/>、/>、/>And->Are all undetermined temperature coefficients; and solving the undetermined temperature coefficient according to the test constant current characteristic function, the comparison constant current characteristic function, the preset duration and the temperature of the test environment of a plurality of test groups with the same running preset duration in each test batch to obtain the temperature coefficient.
According to one embodiment of the present invention, in the formula (1), the drain current of the field effect transistor of the control batch is relatively stable, and the drain current increases with the increase of the drain voltage by a smaller magnitude, so that the slope of the control constant current characteristic function is smaller, and the stability of the current can be maintained. Due to the influence of temperature, after the field effect transistor is operated for a preset time in a test environment with higher temperature, the performance of the field effect transistor may be reduced to different degrees, and the stability of the current in the constant current area is poorer than that of the control batch, namely, the slope of the test constant current characteristic function is larger, and the current is difficult to keep in a stable state. Thus, the degree of performance degradation of the field effect transistors in the test group can be determined based on the difference between the slopes of the control constant current characteristic function and the test constant current characteristic function, for example, a method of usingTo represent the degree of performance degradation, that is, the ratio of the amount of change in the slope to the slope of the control constant current characteristic function is used to represent the degree of performance degradation of the field effect transistor of the test group operated in the ith test lot for the jth duration. Further, the influence of the time period can be discharged by dividing the above degree of performance degradation by the j-th time period to determine the relationship between the degree of performance degradation and the temperature. The degree of decline of the temperature and the performance does not show a linear relation, but shows a trend of accelerating decline of the degree of decline of the performance of the field effect transistor along with the rise of the temperature, therefore, an exponential form of undetermined temperature coefficient can be set to express the relation between the temperature and the degree of decline of the performance, namely, the coefficient and the index of the temperature of the test environment where the ith test batch is positioned are set through the undetermined temperature coefficient, and a constant term, an exponential form expression is obtained >To express the relationship between the temperature and the degree of degradation of the performance.
According to one embodiment of the present invention, in the characteristic curve of the field effect transistor in the formula (2), the intercept of the constant current region portion may be used to represent the magnitude of the drain current, and if the performance of the field effect transistor is not degraded, the height of the straight line of the constant current region is constant and is approximately equal to the intercept of the straight line. Therefore, the comparison of the intercept of the constant current characteristic function can be used for describing the magnitude of the drain current before the performance of the field effect transistor is not reduced. The performance of the field effect transistor in each test group is reduced due to the temperature, which may lead to a reduction in drain current, for example, the intercept may be reduced due to an increase in slope, the conduction efficiency of the field effect transistor may be reduced due to a reduction in performance, the impedance may be increased, the drain current may be reduced, and the intercept may be reduced. Thus, the degree of decrease in the intercept of the constant current characteristic function relative to the intercept of the control constant current characteristic function is testedThe method can be used for describing the performance degradation degree of the field effect transistor, and further, the performance degradation degree can be divided by the j-th duration, so that the influence of the duration is discharged, and the relation between the performance degradation degree and the temperature can be determined. And, as described above, the degree of decrease in temperature and performance does not show a linear relationship, but shows a tendency of accelerated decrease in the degree of decrease in performance of the field effect transistor with an increase in temperature, therefore, an exponential form of the pending temperature coefficient may be set to express the relationship between the temperature and the degree of decrease in performance, that is, the coefficient and the index of the temperature of the test environment in which the i-th test lot is located and the constant term are set by the pending temperature coefficient to obtain an exponential form of the expression- >To express the relationship between the temperature and the degree of degradation of the performance.
According to one embodiment of the present invention, the measured slopes and intercepts of the test constant current characteristic functions and the reference constant current characteristic functions of the plurality of test groups, the temperatures of the test environments where the plurality of test batches are located, and the preset operation time period are substituted into the formula (1) and the formula (2) respectively, so as to fit the plurality of pending temperature coefficients, and obtain the solution values of the pending temperature coefficients, namely, the temperature coefficients.
By the method, the performance degradation degree of the field effect tube of the test group can be determined by testing the change of the slope and the intercept of the constant current characteristic function and the comparison constant current characteristic function, the undetermined temperature coefficient in an exponential form capable of showing the accelerated degradation of the performance can be set based on the characteristic of the influence of high temperature on the performance of the field effect tube, the undetermined temperature coefficient is fitted based on measured data, and the accuracy of the solved temperature coefficient can be improved.
According to one embodiment of the invention, the test constant current characteristic functions of a plurality of test groups with different running preset durations in the same test batch and the comparison constant current characteristic functions can be compared, so that the influence of the running preset durations on the performance reduction of the field effect transistor is determined under the condition that the running temperatures are consistent, and the time coefficient describing the influence is obtained.
According to one embodiment of the present invention, determining a time coefficient according to a test constant current characteristic function of a plurality of test groups running in the same test lot and having different preset durations, and the reference constant current characteristic function includes: determining the relation between the difference between the test constant current characteristic function and the comparison constant current characteristic function and the preset time length according to formulas (3) and (4),
（3）
（4）
wherein,to contrast constant current characteristicsSlope of function, +.>Slope of test constant current characteristic function for test group of preset duration of jth duration running in ith test batch, +.>For the temperature of the test environment in which the ith test batch is located, +.>For the j-th duration, +.>For comparison of the intercept of the constant-current characteristic function +.>For the intercept of the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length,/for the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length>、/>、/>And->Is a undetermined time coefficient; and solving the undetermined time coefficient according to the test constant current characteristic function of a plurality of test groups with different running preset time lengths, the comparison constant current characteristic function, the preset time length and the temperature of the test environment in each test batch to obtain the time coefficient.
In equation (3), according to one embodiment of the present invention, one can useTo represent the performance of the field effect transistor of the test group running in the ith test batch and having a preset length of time of the jth lengthThe degree of decline can be divided by the temperature of the test environment in which the ith test batch is located to exclude temperature factors, so as to determine the relationship between the degree of decline of the performance of the field effect transistor and the preset running duration. The preset duration of operation has a linear relation with the performance degradation degree of the field effect transistor, so the expression of the form of a first order polynomial can be set>The relation between the performance decline degree of the field effect tube and the running preset time length is expressed, and in the expression, the undetermined time coefficient is a first order coefficient and a constant term of a first order polynomial.
In equation (4), according to one embodiment of the present invention, one can useThe performance degradation degree of the field effect tube of the test group with the preset time length of the jth time length in the ith test batch is represented, and the performance degradation degree of the field effect tube is divided by the temperature of the test environment where the ith test batch is positioned, so that temperature factors are eliminated, and the relationship between the performance degradation degree of the field effect tube and the preset time length of the operation is further determined. The preset duration of operation has a linear relation with the performance degradation degree of the field effect transistor, so the expression of the form of a first order polynomial can be set >The relation between the performance decline degree of the field effect tube and the running preset time length is expressed, and in the expression, the undetermined time coefficient is a first order coefficient and a constant term of a first order polynomial.
According to one embodiment of the present invention, the measured slopes and intercepts of the test constant current characteristic functions and the reference constant current characteristic functions of the plurality of test groups, the temperatures of the test environments where the plurality of test batches are located, and the preset operation time period are substituted into the formula (3) and the formula (4) respectively, so as to fit the plurality of undetermined time coefficients, and obtain the solution values of the undetermined time coefficients, namely, the time coefficients.
By the method, the performance degradation degree of the field effect tube of the test group can be determined by testing the change of the slope and the intercept of the constant current characteristic function and the comparison constant current characteristic function, the undetermined time coefficient reflecting the linear relation can be set based on the characteristic of the influence of time on the performance of the field effect tube, the undetermined time coefficient is fitted based on the measured data, and the accuracy of the solved time coefficient can be improved.
According to one embodiment of the present invention, the predicted lifetime of the fet is determined based on the temperature coefficient and the time coefficient, and the steps include: setting a constant current characteristic curve slope threshold value and a constant current characteristic curve intercept threshold value; setting the operating temperature of the field effect transistor; and determining the predicted service life of the field effect transistor according to the temperature coefficient, the time coefficient, the operating temperature, the constant current characteristic curve slope threshold, the constant current characteristic curve intercept threshold and the comparison constant current characteristic function.
According to one embodiment of the invention, the slope threshold of the constant current characteristic curve is the maximum slope of the constant current region of the characteristic curve of the field effect transistor, and if the slope of the constant current region is larger than the slope threshold of the constant current characteristic curve, the drain current of the constant current region of the field effect transistor can be considered to have insufficient stability, serious performance attenuation and incapability of continuous use, namely the service life is reached. The constant current characteristic curve intercept threshold is the minimum value of the intercept of the straight line of the constant current region of the characteristic curve of the field effect transistor, if the intercept of the straight line of the constant current region of the characteristic curve is smaller than the constant current characteristic curve intercept threshold, the impedance of the constant current region of the field effect transistor can be considered to be larger, or the current stability is insufficient, the performance attenuation is serious, and the constant current region cannot be used continuously, namely, the service life is reached.
According to an embodiment of the present invention, the operating temperature of the fet may be set, for example, the operating environment of the electronic device in which the fet is located may be estimated, for example, if the fet is used in a home appliance, the operating temperature may be set to be room temperature, and the setting manner of the operating temperature is not limited.
According to one embodiment of the invention, the temperature coefficient, the time coefficient, the operating temperature, the constant current characteristic The performance curve slope threshold, the constant current characteristic curve intercept threshold, and the control constant current characteristic function determine a predicted lifetime of the field effect transistor, comprising: determining the predicted lifetime of the field effect transistor according to equation (5)，
（5）
Wherein,for comparison of the slope of the constant-current characteristic function +.>Slope threshold for constant current characteristic curve,/->For operating temperature, +.>、/>、/>、/>、/>、/>Is a temperature coefficient->For comparison of the intercept of the constant-current characteristic function +.>Is a constant current characteristic curve sectionDistance threshold value (I)>、/>、/>、/>Is a time coefficient.
According to one embodiment of the present invention, in equation (5),the time period when the slope of the constant current region of the characteristic curve of the field effect tube, which is solved based on the relation described by the temperature coefficient, the operation temperature and the formula (1), reaches the slope threshold value of the constant current characteristic curve, if the time period is exceeded, the slope of the constant current region of the characteristic curve exceeds the slope threshold value of the constant current characteristic curve, the stability of the drain current is insufficient, and the field effect tube reaches the service life, so that the service life can be used as an alternative time period for predicting the service life.
According to one embodiment of the present invention, in equation (5),the time period when the slope of the constant current region of the characteristic curve of the field effect tube, which is solved based on the relation described by the time coefficient, the operation temperature and the formula (3), reaches the slope threshold value of the constant current characteristic curve, if the time period is exceeded, the slope of the constant current region of the characteristic curve exceeds the slope threshold value of the constant current characteristic curve, the stability of the drain current is insufficient, and the field effect tube reaches the service life, so that the service life can be used as an alternative time period for predicting the service life.
According to one embodiment of the present invention, in equation (5),based on temperature coefficient, operating temperatureAnd (2) the use time when the intercept of the constant current region of the characteristic curve of the field effect tube solved by the relation described in the formula (2) reaches the intercept threshold value of the constant current characteristic curve, if the use time is exceeded, the intercept of the constant current region of the characteristic curve is lower than the intercept threshold value of the constant current characteristic curve, and the fact that the stability of the drain current is insufficient or the impedance is overlarge is indicated, and the field effect tube reaches the service life is indicated, so that the use time can be used as an alternative time for predicting the service life.
According to one embodiment of the present invention, in equation (5),the time length when the intercept of the constant current area of the characteristic curve of the field effect tube, which is solved based on the relation described by the time coefficient, the operation temperature and the formula (4), reaches the intercept threshold value of the constant current characteristic curve, if the time length is exceeded, the intercept of the constant current area of the characteristic curve is lower than the intercept threshold value of the constant current characteristic curve, the fact that the drain current is insufficient in stability or the impedance is overlarge is indicated, and the field effect tube reaches the service life is achieved, so that the service life can be used as an alternative time length for predicting the service life.
According to one embodiment of the present invention, the minimum value of the four alternative durations may be obtained as the predicted service life, and when the service duration reaches the minimum value of the four alternative durations, it may happen that the intercept of the constant current region of the characteristic curve of the field effect transistor reaches the intercept threshold value of the constant current characteristic curve, or the slope of the constant current region reaches the slope threshold value of the constant current characteristic curve, which indicates that the field effect transistor has reached the service life. Therefore, the minimum value of the four alternative durations can be used as the predicted service life of the field effect transistor.
By the method, the time coefficient or the temperature coefficient and the relation between the performance degradation degree and the use or the temperature of the field effect transistor can be utilized to obtain the alternative duration, so that the minimum value of the alternative duration is determined and used as the predicted service life, and the accuracy and objectivity of the predicted service life can be improved.
According to the method for testing the service life of the semiconductor device, the field effect tube to be tested can be divided into a plurality of batches, the temperature of the testing environment where the field effect tube of each batch is located and the duration of the time in the testing environment are respectively set, and then the drain voltage and the drain current of the field effect tube can be measured, so that the performance degradation condition of the field effect tube of each batch is determined, the service life of the field effect tube is estimated based on the performance degradation condition, and further the field effect tube can be maintained or replaced when the service life is about to be reached in the use process of the field effect tube, so that the probability of the performance degradation and even the functional failure of equipment for installing the field effect tube is reduced. When solving the predicted service life, the temperature coefficient and the time coefficient can be solved, and then the predicted service life is solved, when solving the temperature coefficient, the performance degradation degree of the field effect tube of the test group can be determined by testing the slope and intercept change of the constant current characteristic function and the contrast constant current characteristic function, and the accuracy of the solved temperature coefficient can be improved by setting the to-be-determined temperature coefficient in an exponential form capable of representing the accelerated degradation of the performance based on the characteristics of the influence of high temperature on the performance of the field effect tube and fitting the to-be-determined temperature coefficient based on measured data. When solving the time coefficient, the performance degradation degree of the field effect tube of the test group can be determined by testing the change of the slope and the intercept of the constant current characteristic function and the comparison constant current characteristic function, the undetermined time coefficient reflecting the linear relation can be set based on the characteristic of the influence of time on the performance of the field effect tube, and the undetermined time coefficient is fitted based on the measured data, so that the accuracy of the solved time coefficient can be improved. When the predicted service life is solved, the time coefficient or the temperature coefficient and the relation between the performance degradation degree and the use or the temperature of the field effect tube can be utilized to obtain the alternative duration, so that the minimum value of the alternative duration is determined and used as the predicted service life, and the accuracy and objectivity of the predicted service life can be improved.
Fig. 2 schematically illustrates a block diagram of a semiconductor device life test system according to an embodiment of the present invention, the system including:
the dividing module is used for dividing a plurality of field effect transistors to be tested with the same type into a plurality of batches, wherein each batch comprises a plurality of field effect transistors, and the batches comprise a test batch and a control batch;
the first placement module is used for placing the field effect transistors of the control batch in a control environment respectively, wherein the temperature of the control environment is the preset storage temperature of the field effect transistors;
the second placement module is used for placing the field effect transistors of the plurality of test batches in a plurality of test environments respectively, wherein the temperature of the test environments is higher than the preset storage temperature;
the operation module is used for respectively applying the same first grid voltage and the first drain voltage to the field effect transistors in each batch so as to enable the field effect transistors in each batch to respectively operate for a preset time period;
the current module is used for respectively applying the same second grid voltage to each batch of field effect transistors after the preset duration is over, and respectively applying various drain voltages to obtain drain currents corresponding to the drain voltages;
The predicted service life module is used for obtaining the predicted service life of the field effect transistor according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistor and the preset duration.
It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are by way of example only and are not limiting. The objects of the present invention have been fully and effectively achieved. The functional and structural principles of the present invention have been shown and described in the examples and embodiments of the invention may be modified or practiced without departing from the principles described.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (8)
1. A method for testing the service life of a semiconductor device, comprising:
dividing a plurality of field effect transistors to be tested of the same type into a plurality of batches, wherein each batch comprises a plurality of field effect transistors, and the batches comprise a test batch and a control batch;
respectively placing the field effect transistors of the control batch in a control environment, wherein the temperature of the control environment is the preset storage temperature of the field effect transistors;
respectively placing field effect transistors of a plurality of test batches in a plurality of test environments, wherein the temperature of the test environments is higher than the preset storage temperature;
applying the same first gate voltage and first drain voltage to each batch of field effect transistors respectively, so that each batch of field effect transistors respectively run for a preset time period;
after the preset duration is over, respectively applying the same second grid voltage to each batch of field effect transistors, and respectively applying various drain voltages to obtain drain currents corresponding to the drain voltages;
and obtaining the predicted service life of the field effect transistor according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistors and the preset duration.
2. The method of claim 1, wherein obtaining the predicted lifetime of the field effect transistor based on the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistors, and the predetermined duration comprises:
dividing field effect transistors of the same test batch into a plurality of test groups, wherein each test group comprises a plurality of field effect transistors, and the preset time lengths of the field effect transistors of each test group are different;
after the operation of each test batch is finished, obtaining a characteristic curve between the drain voltage and the drain current corresponding to each test group according to the drain voltage and the drain current of the field effect transistor of each test group;
determining a first conversion voltage, a first conversion current, a second conversion voltage and a second conversion current of the characteristic curves of the field effect transistors of each test group according to the characteristic curves, wherein the first conversion voltage is the conversion voltage of the characteristic curves of the field effect transistors converted from the variable resistor area to the constant current area, the first conversion current is the drain current corresponding to the first conversion voltage, the second conversion voltage is the conversion voltage of the characteristic curves of the field effect transistors converted from the constant current area to the breakdown area, and the second conversion current is the drain current corresponding to the second conversion voltage;
And determining the predicted service life of the field effect tube according to the first conversion voltage, the first conversion current, the second conversion voltage and the second conversion current of each test group, the preset time length of operation of each test group, the temperature of the test environment and the temperature of the control environment.
3. The method of claim 2, wherein determining the predicted lifetime of the fet based on the first switching voltage, the first switching current, the second switching voltage, and the second switching current of each test group, and the preset duration and temperature of the test environment in which each test group operates, and the temperature of the control environment, comprises:
obtaining test constant current characteristic functions of each test group according to the first conversion voltage, the first conversion current, the second conversion voltage and the second conversion current of each test group;
obtaining a control constant current characteristic function of the control batch;
determining a temperature coefficient according to test constant current characteristic functions of a plurality of test groups with the same running preset duration in different test batches and the control constant current characteristic functions;
determining a time coefficient according to the test constant current characteristic functions of a plurality of test groups with different running preset durations in the same test batch and the control constant current characteristic functions;
And determining the predicted service life of the field effect tube according to the temperature coefficient and the time coefficient.
4. The method according to claim 3, wherein determining the temperature coefficient based on the test constant current characteristic functions of the plurality of test groups having the same preset duration of operation in different test batches and the control constant current characteristic function comprises:
according to the formula
And +.>Determining a relationship between a difference between the test constant current characteristic function and the control constant current characteristic function and a temperature of a test environment in which the test batch is located, wherein ∈>For comparison of the slope of the constant-current characteristic function +.>Slope of test constant current characteristic function for test group of preset duration of jth duration running in ith test batch, +.>For the temperature of the test environment in which the ith test batch is located, +.>For the j-th duration, +.>For comparison of constant currentIntercept of characteristic function->For the intercept of the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length,/for the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length>、/>、/>、/>、/>And->Are all undetermined temperature coefficients;
and solving the undetermined temperature coefficient according to the test constant current characteristic function, the comparison constant current characteristic function, the preset duration and the temperature of the test environment of a plurality of test groups with the same running preset duration in each test batch to obtain the temperature coefficient.
5. A method for testing the service life of a semiconductor device according to claim 3, wherein determining the time coefficient based on the test constant current characteristic functions of the plurality of test groups having different preset durations of operation in the same test lot and the control constant current characteristic function comprises:
according to the formula
And->，
Determining the relation between the difference between the test constant current characteristic function and the comparison constant current characteristic function and the preset duration, wherein,for comparison of the slope of the constant-current characteristic function +.>Slope of test constant current characteristic function for test group of preset duration of jth duration running in ith test batch, +.>For the temperature of the test environment in which the ith test batch is located, +.>For the j-th duration, +.>For comparison of the intercept of the constant-current characteristic function +.>For the intercept of the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length,/for the test constant current characteristic function of the test group running in the ith test batch for a preset length of time of the jth length>、/>、/>And->Is a undetermined time coefficient;
and solving the undetermined time coefficient according to the test constant current characteristic function of a plurality of test groups with different running preset time lengths, the comparison constant current characteristic function, the preset time length and the temperature of the test environment in each test batch to obtain the time coefficient.
6. The method of claim 3, wherein determining the predicted lifetime of the fet based on the temperature coefficient and the time coefficient comprises:
setting a constant current characteristic curve slope threshold value and a constant current characteristic curve intercept threshold value;
setting the operating temperature of the field effect transistor;
and determining the predicted service life of the field effect transistor according to the temperature coefficient, the time coefficient, the operating temperature, the constant current characteristic curve slope threshold, the constant current characteristic curve intercept threshold and the comparison constant current characteristic function.
7. The method of claim 6, wherein determining the predicted lifetime of the fet based on the temperature coefficient, the time coefficient, the operating temperature, the constant current characteristic slope threshold, the constant current characteristic intercept threshold, and the control constant current characteristic function, comprises:
according to the formula
，
Determining a predicted lifetime of the field effect transistorWherein->For comparison of the slope of the constant-current characteristic function +.>Slope threshold for constant current characteristic curve,/- >For operating temperature, +.>、/>、/>、/>、/>、/>Is a temperature coefficient->For comparison of the intercept of the constant-current characteristic function +.>For constant current characteristic curve intercept threshold, +.>、/>、/>、/>Is a time coefficient.
8. A semiconductor device life test system, comprising:
the dividing module is used for dividing a plurality of field effect transistors to be tested with the same type into a plurality of batches, wherein each batch comprises a plurality of field effect transistors, and the batches comprise a test batch and a control batch;
the first placement module is used for placing the field effect transistors of the control batch in a control environment respectively, wherein the temperature of the control environment is the preset storage temperature of the field effect transistors;
the second placement module is used for placing the field effect transistors of the plurality of test batches in a plurality of test environments respectively, wherein the temperature of the test environments is higher than the preset storage temperature;
the operation module is used for respectively applying the same first grid voltage and the first drain voltage to the field effect transistors in each batch so as to enable the field effect transistors in each batch to respectively operate for a preset time period;
the current module is used for respectively applying the same second grid voltage to each batch of field effect transistors after the preset duration is over, and respectively applying various drain voltages to obtain drain currents corresponding to the drain voltages;
The predicted service life module is used for obtaining the predicted service life of the field effect transistor according to the temperature of the control environment, the temperature of the test environment, the drain voltage and drain current of each batch of field effect transistor and the preset duration.
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