CN117013361A - Ohmic contact generation method based on P-type gallium nitride and semiconductor device - Google Patents
Ohmic contact generation method based on P-type gallium nitride and semiconductor device Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 243
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 228
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000000206 photolithography Methods 0.000 claims abstract 3
- 238000001883 metal evaporation Methods 0.000 claims abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 22
- 229910052749 magnesium Inorganic materials 0.000 claims description 22
- 239000011777 magnesium Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000011282 treatment Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 6
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 239000003353 gold alloy Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明提供一种基于P型氮化镓的欧姆接触生成方法及半导体器件，涉及半导体技术领域，其中方法包括：在衬底上制备外延结构，外延结构包括以下至少一项：氮化镓缓冲层、非故意掺杂氮化镓层、第一掺镁P型氮化镓层及第二掺镁P型氮化镓层；对氮化镓缓冲层、非故意掺杂氮化镓层、第一掺镁P型氮化镓层及第二掺镁P型氮化镓层进行光刻、蒸镀金属、剥离、退火处理，生成P型氮化镓欧姆接触。上述方法中，通过控制第二掺镁P型氮化镓层中的碳杂质浓度，可有效降低比接触电阻率，从而降低了P型氮化镓结构的欧姆接触。
The invention provides an ohmic contact generation method and a semiconductor device based on P-type gallium nitride, and relates to the field of semiconductor technology. The method includes: preparing an epitaxial structure on a substrate, and the epitaxial structure includes at least one of the following: a gallium nitride buffer layer , the unintentionally doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer; for the gallium nitride buffer layer, the unintentionally doped gallium nitride layer, the first The magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer are subjected to photolithography, metal evaporation, stripping, and annealing to generate a P-type gallium nitride ohmic contact. In the above method, by controlling the carbon impurity concentration in the second magnesium-doped P-type gallium nitride layer, the specific contact resistivity can be effectively reduced, thereby reducing the ohmic contact of the P-type gallium nitride structure.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a P-type gallium nitride-based ohmic contact generation method and a semiconductor device.
Background
Gallium nitride material systems exhibit excellent properties in the field of solid state light emitting diodes, blue/green lasers, high electron mobility transistors and optoelectronic and microelectronic devices such as solar cells. The gallium nitride-based laser has the advantages of adjustable wavelength, high efficiency, small volume, controllable time space and the like, and has important application value in the fields of laser display, laser micro-projection, laser illumination, laser processing, underwater communication and the like.
How to obtain good P-type gallium nitride ohmic contact is an important basis for the wide application of gallium nitride-based devices, for example, the working voltage of gallium nitride-based lasers is directly related to the P-type ohmic contact.
However, since the ionization energy of the magnesium acceptor impurity in P-type gallium nitride is as high as 200meV, and the impurity or defect in gallium nitride compensates for the magnesium acceptor, the hole concentration is low, and furthermore, the metal higher than the work function of P-type gallium nitride is lacking, making it difficult to realize ohmic contact with low specific contact resistivity.
Disclosure of Invention
The invention provides an ohmic contact generation method based on P-type gallium nitride and a semiconductor device, which are used for solving the defect that the ohmic contact based on P-type gallium nitride in the prior art is higher than the contact resistivity, and realizing the effective reduction of the specific contact resistivity of the ohmic contact based on P-type gallium nitride.
The invention provides an ohmic contact generation method based on P-type gallium nitride, which comprises the following steps:
preparing an epitaxial structure on a substrate, the epitaxial structure comprising at least one of: the device comprises a gallium nitride buffer layer, an unintentionally doped gallium nitride layer, a first magnesium-doped P-type gallium nitride layer and a second magnesium-doped P-type gallium nitride layer; wherein the second magnesium-doped P-type GaN layer has a higher magnesium impurity concentration than the first magnesium-doped P-type GaN layer, and the second magnesium-doped P-type GaN layer has a carbon impurity concentration range of 1.4X10 17 cm -3 Up to 3.4X10 20 cm -3 ；
And carrying out photoetching, metal vapor plating, stripping and annealing treatment on the gallium nitride buffer layer, the unintended doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer to generate P-type gallium nitride ohmic contact.
Optionally, the carbon impurity concentration of the second magnesium-doped P-type gallium nitride layer is obtained by adjusting the growth temperature and the reaction chamber pressure of the second magnesium-doped P-type gallium nitride layer;
the growth temperature of the second magnesium-doped P-type gallium nitride layer is more than 800 ℃ and less than or equal to 900 ℃;
the range of the reaction chamber pressure of the second magnesium-doped P-type gallium nitride layer comprises at least one of the following: greater than or equal to 10Torr, less than 30Torr; greater than 100Torr and less than or equal to 500Torr;
the thickness of the second magnesium-doped P-type gallium nitride layer is more than 50nm and less than or equal to 100nm;
the second magnesium doped P-type gallium nitride layer has a magnesium impurity concentration of: greater than 1X 10 20 cm -3 Less than or equal to 1X 10 21 cm -3 。
Optionally, the preparing an epitaxial structure on the substrate includes:
growing a gallium nitride buffer layer on the substrate;
growing a layer of said unintentionally doped gallium nitride layer on said gallium nitride buffer layer;
growing a first magnesium-doped P-type gallium nitride layer on the unintentionally doped gallium nitride layer;
and growing a second magnesium-doped P-type gallium nitride layer on the first magnesium-doped P-type gallium nitride layer.
Optionally, the range of the growth temperature of the gallium nitride buffer layer includes at least one of the following: 400 ℃ or higher and 500 ℃ or lower; more than 600 ℃ and less than or equal to 700 ℃.
Optionally, the range of values of the growth temperature of the unintentionally doped gallium nitride layer includes at least one of the following: more than or equal to 800 ℃ and less than 900 ℃; more than 1100 ℃ and less than or equal to 1500 ℃;
the range of the thickness of the unintentionally doped gallium nitride layer comprises at least one of the following: greater than or equal to 10nm, less than 500nm; greater than 2000nm and less than or equal to 4000nm.
Optionally, the range of the growth temperature of the first magnesium-doped P-type gallium nitride layer includes at least one of the following: more than or equal to 800 ℃ and less than 900 ℃; more than 1100 ℃ and less than or equal to 1500 ℃;
the range of the thickness of the first magnesium-doped P-type gallium nitride layer comprises at least one of the following: greater than or equal to 10nm, less than 50nm; greater than 200nm and less than or equal to 1000nm;
the range of the reaction chamber pressure of the first magnesium-doped P-type gallium nitride layer comprises at least one of the following: greater than or equal to 10Torr, less than 30Torr; greater than 100Torr and less than or equal to 500Torr;
the magnesium impurity concentration of the first magnesium-doped P-type gallium nitride layer is as follows: greater than 1X 10 18 cm -3 Less than or equal to 5X 10 19 cm -3 。
Optionally, the second magnesium-doped P-type gallium nitride layer comprises a nickel-gold alloy.
Optionally, the material of the substrate includes any one of the following:
sapphire; silicon carbide; gallium nitride.
Optionally, the growth methods of the gallium nitride buffer layer, the unintentionally doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer are as follows: vapor deposition.
The invention also provides a P-type gallium nitride semiconductor device, comprising: a substrate, and an epitaxial structure on the substrate;
the epitaxial structure comprises at least one of the following: the device comprises a gallium nitride buffer layer, an unintentionally doped gallium nitride layer, a first magnesium-doped P-type gallium nitride layer, a second magnesium-doped P-type gallium nitride layer and a P-type gallium nitride ohmic contact;
wherein the second magnesium-doped P-type GaN layer has a higher magnesium impurity concentration than the first magnesium-doped P-type GaN layer, and the second magnesium-doped P-type GaN layer has a carbon impurity concentration range of 1.4X10 17 cm -3 Up to 3.4X10 20 cm -3 ；
The P-type gallium nitride ohmic contact is formed by carrying out photoetching, metal vapor deposition, stripping and annealing treatment on the gallium nitride buffer layer, the unintended doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer.
The ohmic contact generation method based on the P-type gallium nitride and the semiconductor device control the concentration range of carbon impurities in the second magnesium-doped P-type gallium nitride layer to be 1.4 multiplied by 10 by controlling the concentration of the carbon impurities in the second magnesium-doped P-type gallium nitride layer 17 cm -3 Up to 3.4X10 20 cm -3 And then carrying out photoetching, metal vapor plating, stripping and annealing treatment on the gallium nitride buffer layer, the unintentionally doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer to generate P-type gallium nitride ohmic contact, so that the specific contact resistivity can be effectively reduced, and the ohmic contact of the P-type gallium nitride structure is reduced.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of an ohmic contact generation method based on P-type gallium nitride provided by the invention;
FIG. 2 is a schematic illustration of the structure of an epitaxial structure provided by the present invention;
FIG. 3 is a schematic diagram showing the dependence of specific contact resistivity on the concentration of carbon impurities in a P-type heavily doped magnesium GaN layer;
fig. 4 is a schematic diagram of a fitting curve based on a circular transmission line model provided by the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The ohmic contact generation method based on P-type gallium nitride provided by the invention is described below with reference to fig. 1 to 3. Fig. 1 is a schematic flow chart of an ohmic contact generation method based on P-type gallium nitride, which specifically includes steps 101 to 102; wherein:
step 101, preparing an epitaxial structure on a substrate, wherein the epitaxial structure comprises at least one of the following components: the device comprises a gallium nitride buffer layer, an unintentionally doped gallium nitride layer, a first magnesium-doped P-type gallium nitride layer and a second magnesium-doped P-type gallium nitride layer; wherein the second magnesium-doped P-type GaN layer has a higher magnesium impurity concentration than the first magnesium-doped P-type GaN layer, and the second magnesium-doped P-type GaN layer has a carbon impurity concentration range of 1.4X10 17 cm -3 Up to 3.4X10 20 cm -3 。
Optionally, the material of the substrate includes any one of the following: a) Sapphire; b) Silicon carbide; c) Gallium nitride.
Optionally, the growth methods of the gallium nitride buffer layer, the unintentionally doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer are as follows: vapor deposition.
For example, a sapphire substrate is provided, and then ammonia gas is introduced to turn on the gallium source. And growing a 50nm low-temperature gallium nitride buffer layer on the sapphire substrate by adopting an organic metal chemical vapor deposition method, wherein the growth temperature is 450 ℃.
In the embodiment of the present invention, the gallium nitride buffer layer may be understood as a low-temperature gallium nitride buffer layer; an unintentionally doped gallium nitride layer is understood to be a high temperature unintentionally doped gallium nitride layer; the first magnesium-doped P-type gallium nitride layer can be understood as a moderately magnesium-doped P-type gallium nitride layer; the second magnesium-doped P-type gallium nitride layer may be understood as a heavily magnesium-doped P-type gallium nitride layer.
Optionally, the carbon impurity concentration of the second magnesium-doped P-type gallium nitride layer is obtained by adjusting the growth temperature and the reaction chamber pressure of the second magnesium-doped P-type gallium nitride layer;
the growth temperature of the second magnesium-doped P-type gallium nitride layer is more than 800 ℃ and less than or equal to 900 ℃;
the range of the reaction chamber pressure of the second magnesium-doped P-type gallium nitride layer comprises at least one of the following: greater than or equal to 10Torr, less than 30Torr; greater than 100Torr and less than or equal to 500Torr;
the thickness of the second magnesium-doped P-type gallium nitride layer is more than 50nm and less than or equal to 100nm;
the second magnesium doped P-type gallium nitride layer has a magnesium impurity concentration of: greater than 1X 10 20 cm -3 Less than or equal to 1X 10 21 cm -3 。
Specifically, in the embodiment of the invention, the carbon impurity concentration of the heavily magnesium-doped P-type gallium nitride layer is controlled by adjusting the growth temperature and the pressure of the reaction chamber. Wherein the growth temperature range is more than 800 ℃, less than or equal to 900 ℃, and the pressure range is more than or equal to 10Torr and less than 30Torr; alternatively, greater than 100Torr and less than or equal to 500Torr.
In addition, the epitaxial structure was subjected to a rapid thermal annealing treatment under nitrogen for 3 minutes at an annealing temperature of 800 ℃.
And 102, carrying out photoetching, metal vapor plating, stripping and annealing treatment on the gallium nitride buffer layer, the unintended doped gallium nitride layer, the first magnesium doped P-type gallium nitride layer and the second magnesium doped P-type gallium nitride layer to generate P-type gallium nitride ohmic contact.
In the embodiment of the invention, after the epitaxial structure is prepared on the substrate, photoetching, electron beam evaporation, stripping and thermal annealing treatment are required to be carried out on the epitaxial structure based on a round transmission line model, so that the P-type gallium nitride ohmic contact for measuring specific contact resistivity is realized.
The ohmic contact generation method based on the P-type gallium nitride controls the concentration of carbon impurities in the second magnesium-doped P-type gallium nitride layer to control the concentration range of the carbon impurities to be 1.4 multiplied by 10 17 cm -3 Up to 3.4X10 20 cm -3 Then carrying out photoetching, metal vapor plating, stripping and annealing treatment on the gallium nitride buffer layer, the unintended doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer to generate P-type nitrogenThe ohmic contact of gallium nitride can effectively reduce specific contact resistivity, thereby reducing ohmic contact of the P-type gallium nitride structure.
Optionally, the preparation of the epitaxial structure on the substrate specifically includes the following steps 1) -4):
step 1), growing a layer of gallium nitride buffer layer on the substrate.
Optionally, the range of the growth temperature of the gallium nitride buffer layer includes at least one of the following:
a) 400 ℃ or higher and 500 ℃ or lower;
b) More than 600 ℃ and less than or equal to 700 ℃.
The thickness of the gallium nitride buffer layer is 10nm-50nm.
Step 2), growing a layer of the unintentionally doped gallium nitride layer on the gallium nitride buffer layer.
Optionally, the range of values of the growth temperature of the unintentionally doped gallium nitride layer includes at least one of the following:
a) More than or equal to 800 ℃ and less than 900 ℃;
b) More than 1100 ℃ and less than or equal to 1500 ℃.
The range of the thickness of the unintentionally doped gallium nitride layer comprises at least one of the following:
a) Greater than or equal to 10nm, less than 500nm;
b) Greater than 2000nm and less than or equal to 4000nm.
For example, a 2500nm high temperature unintentionally doped gallium nitride layer is grown on a low temperature gallium nitride buffer layer by an organometallic chemical vapor deposition method, and the growth temperature is 1200 ℃.
Step 3), growing a first magnesium-doped P-type gallium nitride layer on the unintentionally doped gallium nitride layer.
Optionally, the range of the growth temperature of the first magnesium-doped P-type gallium nitride layer includes at least one of the following:
a) More than or equal to 800 ℃ and less than 900 ℃;
b) More than 1100 ℃ and less than or equal to 1500 ℃.
The range of the thickness of the first magnesium-doped P-type gallium nitride layer comprises at least one of the following:
a) Greater than or equal to 10nm, less than 50nm;
b) Greater than 200nm and less than or equal to 1000nm.
The range of the reaction chamber pressure of the first magnesium-doped P-type gallium nitride layer comprises at least one of the following:
a) Greater than or equal to 10Torr, less than 30Torr;
b) Greater than 100Torr and less than or equal to 500Torr.
The magnesium impurity concentration of the first magnesium-doped P-type gallium nitride layer is as follows: greater than 1X 10 18 cm -3 Less than or equal to 5X 10 19 cm -3 。
For example, a moderately magnesium-doped P-type GaN layer is grown on the high temperature unintentionally doped GaN layer at 850 ℃ to a thickness of 500nm, wherein the magnesium impurity concentration of the moderately magnesium-doped P-type GaN layer may be 1×10 19 cm -3 。
And 4) growing a second magnesium-doped P-type gallium nitride layer on the first magnesium-doped P-type gallium nitride layer.
Optionally, the second magnesium-doped P-type gallium nitride layer comprises a nickel-gold alloy.
Wherein, the thickness of nickel is 10nm-50nm, and the thickness of gold is 10-50nm; the preparation method of the nickel-gold double-layer metal film is electron beam evaporation or magnetron sputtering.
By the above embodiment, the following effects can be achieved:
1. the specific contact resistivity can be effectively reduced by regulating and controlling the concentration of carbon impurities in the heavily magnesium-doped P-type gallium nitride layer;
2. the carbon impurity concentration in the heavily magnesium-doped P-type gallium nitride layer is directly controlled by using the growth conditions, and the growth regulation and control process is simple.
3. Directly utilizes carbon in the metal organic compound as a carbon source, does not need to additionally introduce new doping materials, improves the utilization efficiency and simplifies the technological process.
4. Ohmic contact with low specific contact resistivity is achieved by selecting a suitable metal system, in particular a nickel gold bilayer metal film.
Fig. 2 is a schematic structural diagram of an epitaxial structure provided by the present invention. Referring to fig. 2 (a), a top view of the epitaxial structure is shown; (b) Is a cross-sectional view of an epitaxial structure, wherein 201 denotes a substrate; 202 denotes a low temperature gallium nitride buffer layer; 203 denotes a high temperature unintentionally doped gallium nitride layer; 204 represents a moderately magnesium-doped P-type gallium nitride layer; 205 represents a heavily magnesium-doped P-type gallium nitride layer; 206 represents an ohmic contact metal layer.
FIG. 3 is a schematic diagram showing the dependence of specific contact resistivity on the concentration of carbon impurities in a P-type heavily doped magnesium GaN layer.
Referring to FIG. 3, in combination with the results of the secondary ion mass spectrometry test and the ohmic contact test, the results show that the P-type GaN ohmic contact can be improved by adjusting the growth conditions in the heavily-doped Mg-P-type GaN layer and regulating the concentration of carbon impurities in the layer, and the specific contact resistivity is reduced to 6.67×10 -5 Ω·cm 2 。
The invention also provides a P-type gallium nitride semiconductor device, comprising: a substrate, and an epitaxial structure on the substrate;
the epitaxial structure comprises at least one of the following: the device comprises a gallium nitride buffer layer, an unintentionally doped gallium nitride layer, a first magnesium-doped P-type gallium nitride layer, a second magnesium-doped P-type gallium nitride layer and a P-type gallium nitride ohmic contact;
wherein the second magnesium-doped P-type GaN layer has a higher magnesium impurity concentration than the first magnesium-doped P-type GaN layer, and the second magnesium-doped P-type GaN layer has a carbon impurity concentration range of 1.4X10 17 cm -3 Up to 3.4X10 20 cm -3 ；
The P-type gallium nitride ohmic contact is formed by carrying out photoetching, metal vapor deposition, stripping and annealing treatment on the gallium nitride buffer layer, the unintended doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer.
In the P-type gallium nitride semiconductor device, the concentration range of carbon impurities is controlled to be 1.4X10 17 cm -3 Up to 3.4X10 20 cm -3 And then carrying out photoetching, metal vapor plating, stripping and annealing treatment on the gallium nitride buffer layer, the unintentionally doped gallium nitride layer, the first magnesium-doped P-type gallium nitride layer and the second magnesium-doped P-type gallium nitride layer to generate P-type gallium nitride ohmic contact, so that the specific contact resistivity can be effectively reduced, and the ohmic contact of the P-type gallium nitride structure is reduced.
Fig. 4 is a schematic diagram of a fitting curve based on a circular transmission line model provided by the invention.
Referring to FIG. 4, FIG. 4 shows further control of carbon, magnesium, hydrogen impurity concentrations, based on data from a circular transmission line model with specific contact resistivity ρ c ＝1.14×10 -6 Ω·cm 2 。
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
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