CN116991008A - A device processing method - Google Patents

Abstract

The application discloses a device processing method, and relates to the technical field of electrochromic. The device processing method comprises the following steps: providing at least one membrane substrate, wherein the membrane substrate comprises at least one basic layer group, and the basic layer group comprises a conductive layer and a basal layer which are arranged in a laminated manner; a plurality of slotted holes are formed in the basic layer group, so that the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer; and filling the slotted hole with a conductive component. The device processing method provided by the application can reduce the processing difficulty of electrochromic devices and improve the processing efficiency.

Description

A device processing method

Technical field

The present application relates to the field of electrochromic technology, and in particular to a device processing method.

Background technique

Electrochromic phenomenon refers to the reversible discoloration of electrochromic materials under the action of an external electric field, which is manifested as reversible changes in color and transparency in appearance.

In the prior art, a step structure is made on the side of the electrochromic device through operations such as laser cutting and edge tearing to expose the conductive layer, and then the conductive layer is electrically connected. During the laser cutting process, the cutting depth needs to be strictly controlled to prevent cutting too deep and damaging the conductive layer or cutting too shallow to tear the edge, which undoubtedly increases the difficulty of processing. In addition, after the edge tearing is completed, the residual electrolyte on the step structure needs to be erased. Therefore, in the existing electrochromic device processing methods, when exposing the conductive layer, there are problems such as high processing difficulty and complicated procedures, which affects the processing efficiency.

Contents of the invention

This application provides a device processing method that reduces the processing difficulty when exposing the conductive layer and improves processing efficiency.

This application provides:

A device processing method, including:

Providing at least one diaphragm base material, the diaphragm base material includes at least one base layer group, the base layer group includes a stacked conductive layer and a base layer;

A plurality of slots are opened on the base layer group, so that the slots extend from a side surface of the base layer away from the conductive layer to at least a side surface of the conductive layer close to the base layer;

The slots are filled with conductive components.

In this application, when opening holes in the base layer group, the slots extend from at least the side surface of the base layer away from the conductive layer to the side surface of the conductive layer close to the base layer, so that part of the structure of the conductive layer is exposed through the slots. come out. Among them, the depth of the slot can allow a certain floating range, which can significantly reduce the processing accuracy requirements when exposing the conductive layer, thereby reducing the processing difficulty. In addition, during the hole opening process, there will be no problem of residual electrolyte on the exposed structure of the conductive layer, so there is no need for wiping action, and wiping steps can be reduced compared to the existing technology. Therefore, the device processing method provided by this application can significantly reduce the processing difficulty when exposing the conductive layer, simplify the operating steps, and thereby improve the processing efficiency.

In some possible implementations, the device processing method includes:

Two diaphragm base materials are provided, and both diaphragm base materials include one of the base layer groups;

A plurality of slots are respectively opened on the two base layer groups, and in the same base layer group, the slots extend from a side surface of the base layer away from the conductive layer at least to the conductive layer. The layer is close to one side surface of the base layer.

In some possible implementations, a plurality of slots are opened in the base layer group from a side of the base layer away from the conductive layer.

In some possible implementations, opening a plurality of slots on the two base layer groups includes:

Coating a mask layer on the side of the conductive layer away from the base layer;

A plurality of slots are opened on the base layer group from the side of the conductive layer away from the base layer, so that the slots penetrate the conductive layer and the base layer in the same base layer group. ground floor;

Clear the mask layer.

In some possible implementations, the slot hole penetrates the conductive layer and the base layer in the same base layer group, and the device processing method further includes:

A transition layer group is provided on the side of the conductive component away from the base layer;

Wherein, the roughness of the surface of the transition layer group away from the conductive component is smaller than the roughness of the surface of the conductive component close to the conductive layer.

In some possible implementations, arranging a transition layer group on the side of the conductive component away from the base layer includes:

A varnish is coated on the side of the conductive component away from the base layer to form a varnish layer.

In some possible implementations, arranging a transition layer group on the side of the conductive component away from the base layer includes:

Arrange a first bus bar on the side of the conductive component away from the base layer;

Coat varnish on the side of the first bus bar away from the conductive component to form a varnish layer.

In some possible implementations, the slot hole penetrates the conductive layer and the base layer in the same base layer group, and the device processing method further includes:

A first bus bar is arranged on a side of the conductive component away from the base layer.

In some possible implementations, the first bus bar is made simultaneously with the conductive component it contacts.

In some possible implementations, the device processing method further includes:

The two base layers are combined into pieces, and a color-changing layer group is formed between the two conductive layers in the two base layer groups.

In some possible implementations, assembling the two base layers into pieces and forming a discoloration layer group between the two conductive layers in the two base layer groups includes:

Coating an electrochromic layer on the side of the conductive layer away from the base layer in one of the base layer groups to form an electrochromic substrate;

Coat a counter electrode layer on the side of the conductive layer away from the base layer in the other base layer group to form a counter electrode substrate;

The counter electrode substrate is bonded to the electrochromic substrate through an electrolyte, and an electrolyte layer is formed between the electrochromic layer and the counter electrode layer.

In some possible implementations, the device processing method further includes:

Arrange a second bus bar on the side of the base layer away from the conductive layer in one of the base layer groups, and connect the second bus bar to each of the conductive components in the base layer group;

A third bus bar is arranged on a side of the base layer away from the conductive layer in another base layer group, and the third bus bar is connected to each conductive component in the base layer group.

In some possible implementations, the device processing method includes:

Provide a diaphragm base material, the diaphragm base material includes a first base layer group, a color changing layer group and a second base layer group that are stacked in sequence, and the conductive layers in the two base layer groups are close to each other. The discoloration layer group;

A plurality of slots are opened on the first base layer group and the second base layer group in turn, and in the same base layer group, the slots are separated from the base layer away from the conductive layer. One side surface extends at least to a side surface of the conductive layer close to the base layer.

In some possible implementations, the device processing method further includes:

Arrange a second bus bar on the side of the first base layer group away from the color-changing layer group, and connect the second bus bar to each conductive component in the first base layer group;

A third bus bar is arranged on a side of the second base layer group away from the color-changing layer group, and the third bus bar is connected to each conductive component in the second base layer group.

In some possible implementations, the second bus bar is made simultaneously with the conductive components on the first base layer set;

The third bus bar is made simultaneously with the conductive components on the second base layer set.

In some possible implementations, filling the slot with a conductive component includes:

Apply conductive medium to the inner wall of the slot;

Fill the gap of the conductive medium with cured glue.

Description of the drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application and therefore do not It should be regarded as a limitation of the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without exerting creative efforts.

Figure 1 shows a schematic flow diagram of a device processing method in some embodiments;

Figure 2 shows a schematic flow chart of the device processing method in Embodiment 1;

Figure 3 shows a schematic cross-sectional structural diagram of the base layer group in Embodiment 1;

Figure 4 shows a schematic flow chart of opening holes on the base layer set in some embodiments;

Figure 5 shows a schematic cross-sectional structural diagram of the base layer group after opening in some embodiments;

Figure 6 shows a schematic diagram of the layout structure of slots in some embodiments;

Figure 7 shows a schematic diagram of the layout structure of slots in another embodiment;

Figure 8 shows a top structural schematic diagram of various arrangements and shapes of slots in some embodiments;

Figure 9 shows schematic diagrams of various cross-sectional structures of slots in some embodiments;

Figure 10 shows a schematic cross-sectional structural diagram of an electrochromic substrate in some embodiments;

Figure 11 shows a schematic cross-sectional structural view of the counter electrode substrate in some embodiments;

Figure 12 shows a schematic flow diagram of filling conductive components in slots in some embodiments;

Figure 13 shows a schematic cross-sectional structural diagram of a conductive component in some embodiments;

Figure 14 shows a schematic top structural view of a conductive component in some embodiments;

Figure 15 shows a schematic cross-sectional structural diagram of two base layers combined in some embodiments;

Figure 16 shows a schematic structural diagram after the second bus bar and the third bus bar are laid out in some embodiments;

Figure 17 shows a schematic top structural view of the second bus bar and slot in some embodiments;

Figure 18 shows a schematic structural diagram of the layout of the second bus bar and the third bus bar in other embodiments;

Figure 19 shows a schematic cross-sectional structural diagram of the electrochromic device in Embodiment 1;

Figure 20 shows a schematic cross-sectional structural diagram of the transition layer group in some embodiments;

Figure 21 shows a schematic flow chart of setting a transition layer group in other embodiments;

Figure 22 shows a schematic cross-sectional structural view of the transition layer group in other implementations;

Figure 23 shows a partial cross-sectional structural schematic diagram of the electrochromic device in Embodiment 2;

Figure 24 shows a schematic cross-sectional structural diagram of the transition layer group in some embodiments;

Figure 25 shows a schematic flow chart of the device processing method in Embodiment 3;

Figure 26 shows a schematic cross-sectional structural diagram of the diaphragm base material in Embodiment 3;

Figure 27 shows a schematic cross-sectional structural diagram of the diaphragm base material after opening in Embodiment 3;

Figure 28 shows a schematic cross-sectional structural view of the diaphragm base material after being filled with conductive components in Embodiment 3;

Figure 29 shows a partial cross-sectional structural diagram of the electrochromic device in Embodiment 3.

Description of main component symbols:

10-basic layer group; 101-slot; 10a-first basic layer group; 10b-second basic layer group; 11-base layer; 11a-first base layer; 11b-second base layer; 12-conductive layer ; 12a-first conductive layer; 12b-second conductive layer; 13-protective film; 20-conductive component; 21-conductive medium; 22-fixer; 30-color-changing layer group; 31-electrochromic layer; 32- Electrolyte layer; 33-counter electrode layer; 41-second bus bar; 42-third bus bar; 50-protective component; 51a-first bottom plate; 51b-second bottom plate; 52-seal; 53a-first adhesive Bonding layer; 53b-second adhesive layer; 60-transition layer group; 60a-first transition layer group; 60b-second transition layer group; 61-first bus bar; 62-varnish layer.

Detailed ways

The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present application and cannot be understood as limiting the present application.

As shown in Figure 3 and Figure 6, establish a Cartesian coordinate system and define the length direction of the electrochromic device to be parallel to the direction shown on the x-axis, and the width direction of the electrochromic device to be parallel to the direction shown on the y-axis. The electrochromic device The thickness direction is parallel to the direction shown by the z-axis. It can be understood that the above definitions are only for the convenience of understanding the relative positional relationship of various components in the electrochromic device, and should not be understood as limiting the present application.

The embodiment provides a device processing method, which can be used to process electrochromic devices, which can reduce the processing difficulty of electrochromic devices and improve processing efficiency.

As shown in Figures 1, 3, 5 to 11, and 26 to 28, the device processing method may include:

S10, at least one diaphragm base material is provided. The diaphragm base material includes at least one base layer group 10. The base layer group 10 includes a stacked base layer 11 and a conductive layer 12.

Wherein, the base layer 11 can be a transparent base layer, and the base layer 11 can be made of any one or more of polyethylene terephthalate (PET), cyclic olefin copolymer or triacetyl cellulose. . In some embodiments, conductive layer 12 may be a transparent conductive layer. Specifically, the conductive layer 12 can be made of Indium-Tin Oxide (ITO), Aluminum Zinc Oxide (AZO), Fluorine Doped tin Oxide (FTO), silver nanowires, graphene Made of one or more materials such as carbon nanotubes, metal meshes or silver nanoparticles.

S20 , open a plurality of slots 101 on the base layer group 10 so that the slots 101 extend from at least a side surface of the base layer 11 away from the conductive layer 12 to at least a side surface of the conductive layer 12 close to the base layer 11 .

Wherein, slots 101 are opened on the base layer group 10 so that part of the structure of the conductive layer 12 can be exposed through the slots 101 . It can be understood that along the thickness direction of the electrochromic device, the depth of the slot 101 can allow a certain floating range, as long as it is ensured that part of the structure of the conductive layer 12 is exposed relative to the slot 101 . Therefore, compared with the traditional processing technology, this embodiment can significantly reduce the processing accuracy requirements when exposing the conductive layer 12, thereby reducing the processing difficulty and improving the processing efficiency.

In addition, during the process of opening the slots 101 on the base layer group 10, no electrolyte will be attached to the exposed structural surface of the conductive layer 12, and there is no need to perform operations such as wiping, which can save operating procedures and further improve processing efficiency.

S30, fill the conductive component 20 in the slot 101.

When the conductive component 20 is filled in the slot 101 , the conductive component 20 can contact the structural surface of the conductive layer 12 exposed relative to the slot 101 and achieve electrical connection. Thus, electrical connection of the conductive layer 12 can be achieved through the conductive component 20 .

Embodiment 1

As shown in Figure 2, the embodiment provides a device processing method, which may include:

S110, provide two diaphragm base materials, both of which include a base layer group 10.

10 and 11 together, specifically, one of the diaphragm base materials includes a first base layer group 10a, and the other diaphragm base material includes a second base layer group 10b. In embodiments, the first base layer group 10a may include a stacked first base layer 11a and a first conductive layer 12a. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b that are stacked.

S120, open a plurality of slots 101 on the two base layer groups 10 respectively. In the same base layer group 10, the slots 101 extend from at least the side surface of the base layer 11 away from the conductive layer 12 to the conductive layer 12 close to the base layer 11. side surface.

In the embodiment, the same operation method can be used to open a plurality of slots 101 on the two base layer groups 10. The detailed description will be given taking the opening of the slots 101 on the first base layer group 10a as an example.

As shown in FIG. 5 , in some embodiments, the opening operation can be performed on the first base layer group 10a from the side of the first conductive layer 12a away from the first base layer 11a. Correspondingly, the slot hole 101 simultaneously penetrates the first conductive layer 12a and the first base layer 11a.

As shown in Figure 4, in some embodiments, opening a plurality of slots 101 on the first base layer group 10a may specifically include the following steps:

S121, apply a mask layer on the side of the first conductive layer 12a away from the first base layer 11a.

Among them, the mask layer can be made of photoresist, silicon dioxide (SiO ₂ ) or ultraviolet curing glue.

S122: Open a number of slots 101 on the first base layer group 10a from the side of the first conductive layer 12a away from the first base layer 11a, so that the slots 101 penetrate the first conductive layer 12a and the first base layer 11a.

Wherein, part of the structure on the inner wall of the slot 101 in the first conductive layer 12a may be exposed. It is understandable that during the hole opening process, corresponding dust will be generated on the hole opening side. In the embodiment, a mask layer is provided on the side of the first conductive layer 12a away from the first base layer 11a, which can effectively prevent dust from adhering to the side surface of the first conductive layer 12a away from the first base layer 11a, thereby avoiding affecting the Subsequent processing and working performance of electrochromic devices.

As shown in Figure 6, a plurality of slots 101 can be opened on the first base layer group 10a. The plurality of slots 101 can be disposed close to one side of the first base layer group 10a, and can extend along the side. The direction layout is one column. For example, the plurality of slots 101 may be arranged close to one side of the first base layer group 10a along the width direction of the electrochromic device. It can be understood that each side of the first base layer group 10a may overlap with each side of the electrochromic device.

As shown in FIG. 7 , in other embodiments, a plurality of slots 101 may be disposed close to one side of the first base layer group 10 a along the length direction of the electrochromic device. Of course, in other embodiments, the plurality of slots 101 can also be disposed close to any two or three sides of the first base layer group 10a, that is, the plurality of slots 101 are respectively provided in the first base layer group 10a. near any two or three sides. Alternatively, the plurality of slots 101 may be arranged around the circumference of the first base layer group 10a.

As shown in FIG. 6 , in some embodiments, the slots 101 may be circular holes, and the plurality of slots 101 may be evenly spaced. In the embodiment, the vertical distance d between the centers of two adjacent slot holes 101 can be set to 2.0 mm to 30.0 mm. For example, the vertical distance d between the centers of two adjacent slot holes 101 can be set to 2.0 mm or 2.75 mm. mm, 5.0mm, 8.5mm, 12.0mm, 16.0mm, 20.5mm, 24.0mm, 26.5mm, 28.0mm, 30.0mm, etc.

In some embodiments, the distance m between the slot 101 and the side of the electrochromic device to which it is adjacent may be set to 0.5 mm to 20.0 mm. The distance m may specifically refer to the vertical distance between the center of the slot 101 closest to the side and the side. For example, the distance m between the slot 101 and the side of the electrochromic device to which it is adjacent can be set to 0.5mm, 1.5mm, 5.2mm, 6.0mm, 8.0mm, 11.0mm, 14.5mm, 16.0mm, 17.0mm , 19.5mm, 20.0mm, etc.

As shown in FIG. 8 , in other embodiments, the slot hole 101 can be an arc-shaped hole such as an elliptical hole or an annular hole, or a polygonal hole such as a triangular hole, a quadrangular hole, a pentagonal hole, or a five-pointed star hole. hole. The plurality of slots 101 may be arranged in an orderly or disordered manner in a layout area, which may be disposed close to one side of the electrochromic device and extend along the side.

As shown in FIG. 8 , in other embodiments, the slot hole 101 may be a long strip hole and extend along the width direction of the electrochromic device. The plurality of slots 101 may be arranged along the width direction of the electrochromic device and arranged in multiple columns. Several slots 101 arranged along the width direction of the electrochromic device can be recorded as one column. Wherein, two adjacent rows of slots 101 can be arranged in an offset manner. Correspondingly, the vertical distance d between the centers of two adjacent rows of slots 101 may refer to the vertical distance between the center lines of two adjacent rows of slots 101 .

As shown in Figure 8, in other embodiments, a slot 101 may be opened on the first base layer group 10a. The slot 101 can be disposed close to one side of the electrochromic device, and the slot 101 can be a long strip of hole arranged along the side.

As shown in Figure 6, in the embodiment, along the length direction of the electrochromic device, the size n of the slot hole 101 can be set to 0.3 mm to 3.0 mm. For example, the size n of the slot hole 101 can be set to 0.3 mm, 0.45mm, 0.9mm, 1.2mm, 1.55mm, 2.1mm, 2.5mm, 2.75mm, 2.8mm, 3.0mm, etc. Along the width direction of the electrochromic device, the size h of the slot hole 101 can be set to 0.3mm to 5.0mm. For example, the size h of the slot hole 101 can be set to 0.3mm, 0.6mm, 1.0mm, 1.3mm, 1.5 mm, 1.85mm, 2.0mm, 2.3mm, 2.65mm, 2.9mm, 3.4mm, 3.5mm, 4.0mm, 4.2mm, 4.6mm, 4.85mm, 5.0mm, etc. Wherein, the length direction of the electrochromic device may be parallel to the width direction of the material roll used for processing the first base layer group 10a. The width direction of the electrochromic device may be parallel to the winding direction of the roll used to process the first base layer group 10a.

In some embodiments, the slots 101 can be opened on the first base layer group 10a through laser engraving, roll-to-roll punching, or other processes.

S123, clear the mask layer.

After completing the hole opening operation on the first base layer group 10a, the remaining mask layer on the first conductive layer 12a can be removed. For example, when the mask layer is formed of a colloidal material such as ultraviolet curable glue, the remaining mask layer can be removed through a stripping operation.

As shown in FIG. 9 , in other embodiments, the first base layer group 10a can also be opened from the side of the first base layer 11a away from the first conductive layer 12a. Therefore, dust generated during the hole opening process can be prevented from adhering to the side surface of the first conductive layer 12a away from the first base layer 11a. Correspondingly, the slot hole 101 can penetrate the first base layer 11a and the first conductive layer 12a at the same time. Of course, the slot 101 may only penetrate the first base layer 11a, and the first conductive layer 12a may be exposed at a position opposite to the slot 101 on one side of the first base layer 11a. Alternatively, along the thickness direction of the electrochromic device, the slot 101 may extend from the side surface of the first base layer 11a away from the first conductive layer 12a to the middle of the first conductive layer 12a.

S130, fill the conductive component 20 in the slot 101.

As shown in Figures 10, 11 and 13, specifically, the conductive components 20 are filled in the slots 101 on the two base layer groups 10, and each slot 101 in the two base layer groups 10 can be uniformly filled. Fill conductive component 20.

Of course, in other embodiments, on the same base layer group 10 , it is not excluded that some of the slots 101 are filled with conductive components 20 .

As shown in FIGS. 10 and 11 , in some embodiments, conductive component 20 may include conductive medium 21 . Step S130 may include injecting the liquid conductive medium 21 into each slot 101 and solidifying the conductive medium 21 .

It can be understood that the liquid conductive medium 21 can be injected from the opening of one end of the slot 101 close to the base layer 11 or the conductive layer 12, and the conductive medium 21 can move to the other end under the action of gravity. The conductive medium 21 will contact the exposed structures in the conductive layer 12 and achieve electrical connection. After the liquid conductive medium 21 is solidified, the conductive medium 21 can be fixed in the corresponding slot 101 to achieve a fixed connection between the conductive medium 21 and the base layer group 10, thereby ensuring the connection between the conductive medium 21 and the conductive layer 12 it contacts. Stable electrical connection. In the embodiment, the conductive medium 21 can be filled with the slot 101 to ensure sufficient contact and electrical connection between the conductive medium 21 and the corresponding conductive layer 12 , and can also facilitate further electrical connection operation of the conductive medium 21 .

In some embodiments, the conductive medium 21 may be conductive silver paste, conductive glue, conductive paste or conductive liquid.

As shown in FIGS. 12 to 14 , in other embodiments, the conductive component 20 may include a conductive medium 21 and a fixing member 22 located inside the conductive medium 21 . Correspondingly, step 130 may include:

S131, apply the conductive medium 21 on the inner wall of the slot 101.

Specifically, the liquid conductive medium 21 is injected through the opening at one end of the slot hole 101, so that the conductive medium 21 hangs on the inner wall of the slot hole 101, so that a layer of conductive medium 21 is attached to the inner wall of the slot hole 101. Among them, the conductive medium 21 can be conductive liquid or the like.

S132: Fill the gap of the conductive medium 21 with cured glue.

It can be understood that when the conductive medium 21 is injected into the slot 101 and the conductive medium 21 forms a hanging wall on the inner wall of the slot 101, a certain space can be reserved inside the slot 101, and this space is located away from the conductive medium 21 and the slot. One side of the inner wall of the hole 101, that is, the conductive medium 21, has a tubular structure, and a certain gap can be formed inside the conductive medium 21. In embodiments, the gaps between the conductive media 21 can be filled with cured glue. When the cured glue is cured, corresponding fixing parts 22 can be formed, and the fixing parts 22 can provide corresponding support to the conductive medium 21 to avoid the problem of separation of the conductive medium 21 from the slot 101 and thereby improve the stability of the structure. Among them, the curing glue can be ultraviolet curing glue or heat curing glue. The viscosity of the cured glue can be 6000Pa·s～10000Pa·s.

As shown in Figure 2, in some embodiments, the device processing method further includes:

S140, combine the two base layer groups 10 and form a color-changing layer group 30 between the two conductive layers 12 in the two base layer groups.

As shown in Figures 10, 11 and 15, specifically, the electrochromic layer 31 can be coated on the side of the first conductive layer 12a away from the first base layer 11a to form an electrochromic substrate. The counter electrode layer 33 is coated on the side of the second conductive layer 12b away from the second base layer 11b to form a counter electrode substrate. The counter electrode substrate is bonded to the electrochromic substrate through an electrolyte, and an electrolyte layer 32 is formed between the counter electrode substrate and the electrochromic substrate. Among them, the side of the electrochromic layer 31 away from the first conductive layer 12a is bonded to the side of the electrolyte layer 32, and the side of the counter electrode layer 33 away from the second conductive layer 12b is bonded to the side of the electrolyte layer 32 away from the electrochromic layer 31. One side is bonded.

S150 , bus bars are arranged on the sides of the two base layer groups 10 away from the discoloration layer group 30 , and the bus bars are connected to the conductive components 20 on the base layer groups 10 that they are close to.

As shown in Figure 16, specifically, the second bus bar 41 can be arranged on the side of the first base layer 11a away from the discoloration layer group 30, and the second bus bar 41 can be connected to each conductive element on the first base layer group 10a. Component 20 is electrically connected. The third bus bar 42 is arranged on the side of the second base layer 11b away from the discoloration layer group 30, and the third bus bar 42 is electrically connected to each conductive component 20 on the second base layer group 10b.

It can be understood that the second bus bar 41 and the third bus bar 42 can be used to electrically connect external devices, such as controllers, power supplies and other structures, in order to realize power supply and control of the electrochromic device.

In some embodiments, both the second bus bar 41 and the third bus bar 42 can be made of conductive silver paste, copper foil, conductive glue, or the like.

In other embodiments, when the second bus bar 41 and the third bus bar 42 are solidified from liquid conductive materials such as conductive silver paste or conductive glue, the second bus bar 41 can be connected with the first base layer group 10 a The conductive components 20 are manufactured simultaneously. Specifically, the second bus bar 41 and the conductive medium 21 on the first base layer group 10a are manufactured simultaneously. Similarly, the third bus bar 42 can be fabricated simultaneously with the conductive medium 21 on the second base layer group 10b. That is, step S150 and step S130 are performed simultaneously.

Referring again to FIG. 17 , in some embodiments, the projection of each conductive component 20 on the first base layer group 10 a on the plane where the second bus bar 41 is located is located on the second bus bar 41 , that is, the second bus bar 41 is located on the second bus bar 41 . The strips 41 completely cover all the conductive components 20 on the first base layer group 10a to ensure good electrical connection between the second bus bar 41 and each conductive component 20 on the first base layer group 10a.

Similarly, the projection of each conductive component 20 on the second base layer group 10b on the plane where the third bus bar 42 is located is located on the third bus bar 42. That is, the third bus bar 42 completely covers all the conductive components 20 on the second base layer group 10b to ensure good electrical connection between the third bus bar 42 and each conductive component 20 on the second base layer group 10b.

Referring again to FIG. 3 , in some embodiments, the two base layer groups 10 may also include a protective film 13 , and the protective film 13 may be located away from the base layer 11 and away from the conductive layer 12 . It can be understood that before making the second bus bar 41 and the third bus bar 42 , the protective film 13 can be peeled off from the corresponding base layer 11 .

As shown in FIG. 17 , in some embodiments, the second bus bar 41 can be arranged opposite to the third bus bar 42 , that is, the projection of the second bus bar 41 on the plane where the third bus bar 42 is located is located on the third bus bar 42 superior. Correspondingly, the conductive components 20 on the two base layer groups 10 are also arranged oppositely.

As shown in FIG. 18 , in other embodiments, the second bus bar 41 and the third bus bar 42 can be disposed in a staggered manner, that is, the second bus bar 41 and the third bus bar 42 can be disposed on two opposite sides of the electrochromic device. Near the side. Correspondingly, the conductive components 20 on the two base layer groups 10 can also be disposed in a staggered manner, thereby reducing the requirements for operational accuracy when joining the two base layer groups 10, reducing processing difficulty, and improving processing efficiency.

In other embodiments, the second bus bar 41 and the third bus bar 42 can also be produced before the two base layer groups 10 are combined, that is, step S150 is performed between step S140.

As shown in Figure 2, in some embodiments, the device processing method further includes:

S160, set the protection component 50.

19, specifically, an adhesive material is applied on the side of the first base layer 11a away from the first conductive layer 12a to form the first adhesive layer 53a, and on the side of the first adhesive layer 53a away from the first conductive layer 12a One side of the base layer 11a is pressed against the first base plate 51a. Apply an adhesive material on the side of the second base layer 11b away from the second conductive layer 12b to form a second adhesive layer 53b, and press the second adhesive material on the side of the second adhesive layer 53b away from the second base layer 11b. Base plate 51b.

In addition, the sealing member 52 is filled between the first bottom plate 51a and the second bottom plate 51b, and the sealing member 52 is arranged around the circumference of the discoloration layer group 30 and the two base layer groups 10. It can be understood that the protective assembly 50 may be composed of a first base plate 51a, a second base plate 51b and a sealing member 52, to provide protection for the processed discoloration layer set 30 and the two base layer sets 10. At the same time, the protective component 50 can also prevent water vapor and the like from intruding into the discoloration layer group 30 and the two base layer groups 10 to achieve a water vapor isolation effect.

In some embodiments, both the first bottom plate 51a and the second bottom plate 51b may be made of transparent glass. The seal 52 can be made of glue that has a water-oxygen isolation effect, such as pressure-sensitive glue, hot melt glue, UV-curing glue, heat-curing glue, or UV-heated dual-curing glue.

In some embodiments, both the first adhesive layer 53a and the second adhesive layer 53b can be made of optically transparent adhesive materials, such as optical glue (Optically Clear Adhesive, OCA), solid optical glue (Solid Optically Clear Adhesive, SCA). ), ionic interlayer film (Surper Safe Glas, SGP), liquid optical adhesive (Liquid OpticalClear Adhesive, LOCA), etc.

Embodiment 2

As shown in Figure 20, Figure 22 to Figure 24, the embodiment provides a device processing method. Based on the first embodiment, when the slot hole 101 penetrates the base layer 11 and the conductive layer 12 in the same basic layer group 10 When, between step S130 and step S140, the device processing method may also include:

S170 , a transition layer group 60 is provided on the side of the conductive component 20 away from the base layer 11 .

Specifically, the first transition layer group 60a can be arranged on the side of the first conductive layer 12a away from the first base layer 11a, and the first transition layer group 60a can cover each conductive component 20 on the first base layer group 10a. . Similarly, the second transition layer group 60b can be arranged on the side of the second conductive layer 12b away from the second base layer 11b, and the second transition layer group 60b can cover each conductive component on the second base layer group 10b. 20. In the embodiment, the transition layer group 60 can be arranged according to the position of the conductive component 20. Correspondingly, the transition layer group 60 can also be in a strip shape.

In some embodiments, the roughness of the surface of the transition layer group 60 away from the conductive component 20 is smaller than the roughness of the surface of the conductive component 20 close to the conductive layer 12 .

It can be understood that when the conductive component 20 is filled in the slot 101, the roughness of the surface of the conductive component 20 close to the conductive layer 12 cannot be guaranteed, which will affect the subsequent coating of the counter electrode layer 33 and the electrochromic layer on the conductive layer 12. 31, affecting the flatness of the counter electrode layer 33 and the electrochromic layer 31. In the embodiment, the transition layer group 60 is provided on the side of the conductive component 20 close to the conductive layer 12 , and the roughness of the surface of the transition layer group 60 away from the conductive layer 12 is smaller than the roughness of the surface of the conductive component 20 close to the conductive layer 12 It can improve the flatness of the subsequent coating of the counter electrode layer 33 and the electrochromic layer 31 and ensure the working performance of the electrochromic device.

As shown in FIG. 20 , in some embodiments, the transition layer set 60 may include a varnish layer 62 . Correspondingly, the varnish can be coated on the side of the conductive layer 12 away from the base layer 11 through processes such as silk screen printing, and the varnish can be placed corresponding to the position of the conductive component 20 . After the varnish is solidified, the varnish layer 62 can be formed. In some embodiments, the varnish layer 62 may be made of ultraviolet curable varnish or polyurethane varnish. It can be understood that the varnish has a high smoothness, thereby ensuring smoothness when the electrochromic layer 31 and the counter electrode layer 33 are subsequently coated.

In some embodiments, the varnish layer 62 may also be made of conductive varnish. The conductive varnish may refer to varnish doped with conductive materials such as metal powder, so that the varnish layer 62 has conductivity. Therefore, the plurality of conductive components 20 scattered on the base layer group 10 can be connected through the varnish layer 62 to improve the conduction efficiency of the electrochromic device and thereby increase the discoloration speed of the electrochromic device.

In the embodiment, the projection of each conductive component 20 on the base layer group 10 on the plane where the varnish layer 62 is located is located on the varnish layer 62 . This ensures that the varnish layer 62 and each conductive component 20 of the base layer group 10 are equally and effectively connected.

As shown in FIGS. 21 to 23 , in other embodiments, the transition layer group 60 may include a stacked first bus bar 61 and a varnish layer 62 . The first bus bar 61 is located between the varnish layer 62 and the conductive component 20 . Correspondingly, step S170 may include:

S171 , lay the first bus bar 61 on the side of the conductive component 20 away from the base layer 11 .

Among them, the first bus bar 61 can be made of a conductive material with light transmittance such as conductive glue or conductive liquid. The projection of each conductive component 20 in the base layer group 10 on the plane where the first bus bar 61 is located is located on the first bus bar 61 . Therefore, a stable and reliable connection between the first bus bar 61 and each conductive component 20 on the base layer group 10 can be ensured.

In other embodiments, the first bus bar 61 may be fabricated simultaneously with the conductive medium 21 on the base layer set 10 .

S172 , apply varnish on the side of the first bus bar 61 away from the conductive component 20 and form a varnish layer 62 .

The varnish layer 62 may be made of conductive varnish or non-conductive varnish. In addition, the projection of the first bus bar 61 on the plane where the varnish layer 62 is located is located on the varnish layer 62 . Therefore, it is ensured that the roughness of the surface of the transition layer group 60 away from the conductive component 20 meets the requirements, and the smoothness is ensured when the electrochromic layer 31 and the counter electrode layer 33 are subsequently coated.

As shown in FIG. 24 , in still other embodiments, the transition layer group 60 may include a first bus bar 61 . Among them, the first bus bar 61 can be made of a conductive material with light transmittance such as conductive glue or conductive liquid. Specifically, a conductive material such as conductive glue or conductive liquid can be coated on the side of the conductive layer 12 away from the base layer 11 and solidified to form the first bus bar 61 and make the first bus bar 61 and the base layer group 10 where it is located Each conductive component 20 on them contacts and is electrically connected. In addition, the projection of each conductive component 20 in the base layer group 10 on the plane where the first bus bar 61 is located is located on the first bus bar 61 to ensure that the first bus bar 61 and each conductive component 20 on the base layer group 10 are stable and reliable. Connection. Therefore, the plurality of conductive components 20 dispersed on the base layer group 10 can be connected through the first bus bar 61 to improve the conduction efficiency of the electrochromic device and thereby increase the discoloration speed of the electrochromic device. In other embodiments, the first bus bar 61 may be fabricated simultaneously with the conductive medium 21 on the base layer set 10 .

It can be understood that both the first bus bar 61 and the varnish layer 62 are light-transmissive, thereby allowing light to pass through. When the two basic layer groups 10 are subsequently combined, the electrolyte layer 32 in the color-changing layer group 30 can be cured conveniently through ultraviolet curing to ensure the performance of the electrochromic device.

In some embodiments, along the thickness direction of the electrochromic device, the thickness of the two transition layer groups 60 is less than or equal to 15 μm, so as to prevent the electrochromic layer 31 and the counter electrode layer 33 from being too thick and affecting the performance of the electrochromic device. Color changing speed. For example, the thickness of the two transition layer groups 60 can be set to 2 μm, 5 μm, 7.5 μm, 9.2 μm, 10 μm, 13 μm, 14.5 μm, 15 μm, etc. respectively.

Embodiment 3

As shown in Figures 25 and 26, the embodiment provides a device processing method, which may include:

S210. Provide a diaphragm base material. The diaphragm base material includes a first base layer group 10a, a color-changing layer group 30 and a second base layer group 10b that are stacked in sequence. The conductive layers 12 in the two base layer groups 10 are close to the color-changing layer group. Layer group 30 settings.

In some embodiments, the structures of the two base layer groups 10 may be configured to be symmetrical. Specifically, the first base layer group 10a may include a first base layer 11a and a first conductive layer 12a. The first conductive layer 12a is located between the first base layer 11a and the color-changing layer group 30. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b. The second conductive layer 12b is located between the second base layer 11b and the color-changing layer group 30.

The color-changing layer group 30 may include an electrochromic layer 31, an electrolyte layer 32 and a counter electrode layer 33 that are stacked in sequence. Wherein, the side surface of the electrochromic layer 31 away from the electrolyte layer 32 may be attached to the side surface of the first conductive layer 12a away from the first base layer 11a. Correspondingly, the side surface of the counter electrode layer 33 away from the electrolyte layer 32 may be in contact with the side surface of the second conductive layer 12 b away from the second base layer 11 b.

S220, sequentially open a number of slots 101 on the first base layer group 10a and the second base layer group 10b. In the same base layer group 10, the slots 101 are at least extended from the side surface of the base layer 11 away from the conductive layer 12. to the surface of the conductive layer 12 close to the base layer 11 .

As shown in FIG. 27 , specifically, the hole opening operation can be performed on the base layer group 10 starting from the side of the base layer 11 away from the conductive layer 12 . Along the thickness direction of the electrochromic device, the slots 101 may penetrate the base layer 11 and the conductive layer 12 in the same base layer group 10 . Correspondingly, part of the structure of the conductive layer 12 on the inner wall of the slot 101 can be exposed.

In other embodiments, along the thickness direction of the electrochromic device, the slot 101 can penetrate the base layer 11, and the end of the slot 101 away from the base layer 11 can extend to the middle of the conductive layer 12 in the same base layer group 10, That is, the slot hole 101 does not penetrate the conductive layer 12 . Alternatively, along the thickness direction of the electrochromic device, the slot 101 only penetrates the base layer 11 , and accordingly, the conductive layer 12 can be exposed near the position opposite the slot 101 on one side of the base layer 11 .

In some embodiments, the number, position and shape of the slots 101 on the first base layer group 10a and the second base layer group 10b can be the same as those in the first embodiment, and will not be described again here.

In the embodiment, opening holes after the two base layer groups 10 are combined can significantly reduce the impact on the flatness of the electrochromic layer 31 and the counter electrode layer 33 and ensure the working performance of the electrochromic device.

S230, fill the conductive component 20 in the slot 101.

As shown in FIG. 28 , specifically, the conductive components 20 are filled in the slots 101 on the two base layer groups 10 in sequence, so that each slot 101 in the two base layer groups 10 is filled with the conductive component 20 . During processing, the conductive component 20 can be filled from the end opening of the slot 101 away from the discoloration layer group 30 . In the embodiment, the specific manner of filling the conductive component 20 in the slot 101 may be similar to that in Embodiment 1, and will not be described again.

As shown in Figure 25 and Figure 29, further, the device processing method also includes:

S240, arrange the second bus bar 41 on the side of the first base layer group 10a away from the discoloration layer group 30, and connect the second bus bar 41 to each conductive component 20 in the first base layer group 10a. In the second The third bus bar 42 is arranged on the side of the base layer group 10b away from the color-changing layer group 30, and the third bus bar 42 is connected to each conductive component 20 in the second base layer group 10b.

In this embodiment, the layout of the second bus bar 41 and the third bus bar 42 can be the same as that in the first embodiment, and will not be described again.

As shown in Figure 25, the device processing method also includes:

S250, set the protection component 50.

In this embodiment, the specific arrangement of the protective component 50 may be the same as that in Embodiment 1, and will not be described again here.

Embodiment 4

The embodiment also provides a device, which can be processed by the device processing method provided in the embodiment. Wherein, the device may be an electrochromic device.

As shown in Figures 19, 26 and 27, the electrochromic device may include a first base layer group 10a, a color changing layer group 30 and a second base layer group 10b that are stacked in sequence.

Wherein, the first base layer group 10a includes a first base layer 11a and a first conductive layer 12a. The first conductive layer 12a is located between the first base layer 11a and the color-changing layer group 30. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b. The second conductive layer 12b is located between the second base layer 11b and the color-changing layer group 30.

The color-changing layer group 30 may include an electrochromic layer 31, an electrolyte layer 32 and a counter electrode layer 33 that are stacked in sequence. Among them, the electrochromic layer 31 is located between the electrolyte layer 32 and the first conductive layer 12a.

In some embodiments, a plurality of slots 101 are formed on both the first base layer group 10a and the second base layer group 10b. In the first base layer group 10a, the slot 101 may extend from at least a side of the first base layer 11a away from the first conductive layer 12a to a side of the first conductive layer 12a close to the first base layer 11a. In some embodiments, the slot hole 101 may penetrate both the first base layer 11a and the first conductive layer 12a.

In other embodiments, the slot 101 may penetrate the first base layer 11a. Along the thickness direction of the electrochromic device, the slot 101 may also extend to the middle of the first conductive layer 12a.

In the second base layer group 10b, the slot 101 may extend from at least a side of the second base layer 11b away from the second conductive layer 12b to a side of the second conductive layer 12b close to the second base layer 11b. In some embodiments, the slot 101 may penetrate both the second base layer 11b and the second conductive layer 12b.

In other embodiments, the slot 101 may penetrate the second base layer 11b. Along the thickness direction of the electrochromic device, the slot 101 may also extend to the middle of the second conductive layer 12b.

As shown in Figure 6, in some embodiments, a plurality of slots 101 can be opened on the first base layer group 10a. The plurality of slots 101 can be disposed close to one side of the electrochromic device, and can be provided along the side of the electrochromic device. Arrange the sides in sequence. For example, a plurality of slots 101 can be disposed close to one side along the width direction of the electrochromic device, and are evenly spaced.

As shown in FIG. 7 , in other embodiments, a plurality of slots 101 may be disposed close to one side along the length direction of the electrochromic device. Of course, in other embodiments, the plurality of slots 101 can also be arranged close to any two or three sides of the electrochromic device, that is, the plurality of slots 101 are respectively arranged on any two sides of the electrochromic device. near one or three sides. Alternatively, multiple slots 101 can be arranged around the circumference of the electrochromic device.

As shown in Figure 6, in some embodiments, the slot 101 may be a circular hole. In the embodiment, the distance d between two adjacent slots 101 can be set to 2.0mm˜30.0mm. For example, the distance d between two adjacent slots 101 can be set to 2.0mm, 2.75mm, or 5.0mm. , 8.5mm, 12.0mm, 16.0mm, 20.5mm, 24.0mm, 26.5mm, 28.0mm, 30.0mm, etc. The distance d between two adjacent slots 101 may refer to the distance between the centers of the two slots 101 .

In some embodiments, the distance m between the slot 101 and the side of the electrochromic device to which it is adjacent may be set to 0.5 mm to 20.0 mm. The distance m may refer to the distance between the center of the slot 101 closest to the side and the side. For example, the distance m between the slot 101 and the side of the electrochromic device to which it is adjacent can be set to 0.5mm, 1.5mm, 5.2mm, 6.0mm, 8.0mm, 11.0mm, 14.5mm, 16.0mm, 17.0mm , 19.5mm, 20.0mm, etc.

As shown in FIG. 8 , in other embodiments, the slot hole 101 may be a circular hole, an elliptical hole, an annular hole, or other arc-shaped holes, or may be a triangular hole, a quadrilateral hole, a pentagonal hole, or a five-pointed star. Equipolygonal holes. The plurality of slots 101 may be arranged in an orderly or disordered manner in a layout area, which may be disposed close to one side of the electrochromic device and extend along the side.

As shown in Figure 6, in the embodiment, along the length direction of the electrochromic device, the size n of the slot hole 101 can be set to 0.3 mm to 3.0 mm. For example, the size n of the slot hole 101 can be set to 0.3 mm, 0.45mm, 0.9mm, 1.2mm, 1.55mm, 2.1mm, 2.5mm, 2.75mm, 2.8mm, 3.0mm, etc. Along the width direction of the electrochromic device, the size h of the slot hole 101 can be set to 0.3mm to 5.0mm. For example, the size h of the slot hole 101 can be set to 0.3mm, 0.6mm, 1.0mm, 1.3mm, 1.5 mm, 1.85mm, 2.0mm, 2.3mm, 2.65mm, 2.9mm, 3.4mm, 3.5mm, 4.0mm, 4.2mm, 4.6mm, 4.85mm, 5.0mm, etc. Wherein, the length direction of the electrochromic device may be parallel to the width direction of the material roll used for processing the first base layer group 10a. The width direction of the electrochromic device may be parallel to the winding direction of the roll used to process the first base layer group 10a.

As shown in FIG. 8 , in other embodiments, the slots 101 may be elongated holes, and the plurality of slots 101 may be arranged in multiple columns. Several slots 101 arranged along the width direction of the electrochromic device can be recorded as one column. along the width of the electrochromic device. Wherein, two adjacent rows of slots 101 can be arranged in an offset manner.

As shown in Figure 8, in other embodiments, a slot 101 may be opened on the first base layer group 10a. The slot 101 can be disposed close to one side of the electrochromic device, and the slot 101 can be a long hole extending along the side.

As shown in Figures 15 and 16, further, a conductive component 20 is provided in any slot 101, and the conductive component 20 can be electrically connected to the conductive layer 12 it contacts. Thus, electrical connection of the conductive layer 12 can be achieved through the conductive component 20 . In some embodiments, the conductive component 20 may include a conductive medium 21 , and the conductive medium 21 may fill the slot 101 .

As shown in FIG. 13 , in other embodiments, the conductive component 20 may include a conductive medium 21 and a fixing member 22 . The conductive medium 21 can be arranged around the circumference of the fixing member 22 , and the conductive medium 21 can be sandwiched between the fixing member 22 and the inner wall of the slot 101 . Along the thickness direction of the electrochromic device, the size of the conductive component 20 may be equal to the depth of the slot 101 .

As shown in Figure 16, in some embodiments, a second bus bar 41 is provided on the side of the first base layer group 10a away from the discoloration layer group 30, and the second bus bar 41 is connected to the first base layer group 10a. Each conductive component 20 is electrically connected. In the embodiment, the projection of each conductive component 20 on the first base layer group 10a on the plane where the second bus bar 41 is located is located on the second bus bar 41.

Correspondingly, a third bus bar 42 is provided on the side of the second base layer group 10b away from the discoloration layer group 30. The third bus bar 42 is electrically connected to each conductive component 20 in the second base layer group 10b. In the embodiment, the projection of each conductive component 20 on the second base layer group 10b on the plane where the third bus bar 42 is located is located on the third bus bar 42.

As shown in Figure 20, in some embodiments, a first transition layer group 60a is also provided on the side of the first conductive layer 12a away from the first base layer 11a. The first transition layer group 60a covers the first base layer group 10a. of all conductive components 20. Correspondingly, a second transition layer group 60b is provided on the side of the second conductive layer 12b away from the second base layer 11b. The second transition layer group 60b covers all the conductive components 20 in the second base layer group 10b. In embodiments, the structures of the two transition layer groups 60 may be the same.

In some embodiments, transition layer set 60 may include varnish layer 62 . The projection of each conductive component 20 on the same basic layer group 10 on the plane where the varnish layer 62 is located is located on the varnish layer 62 . In some embodiments, the varnish layer 62 may be made of conductive varnish. Therefore, multiple conductive components 20 dispersed on the same basic layer group 10 can be connected through the varnish layer 62 to improve the conduction efficiency of the electrochromic device and thereby increase the color-changing speed of the electrochromic device.

As shown in FIG. 22 , in other embodiments, the transition layer group 60 includes a stacked first bus bar 61 and a varnish layer 62 , where the first bus bar 61 is located between the varnish layer 62 and the conductive component 20 , that is, the optical Oil layer 62 is adjacent to electrochromic layer set 30 . The projection of each conductive component 20 in the same basic layer group 10 on the plane where the first bus bar 61 is located is located on the first bus bar 61 . Moreover, the projection of the first bus bar 61 on the plane where the varnish layer 62 is located is located on the varnish layer 62 .

As shown in FIG. 24 , in still other embodiments, the transition layer group 60 may include a first bus bar 61 . Each conductive component 20 on the same basic layer group 10 is electrically connected to the corresponding first bus bar 61 . Moreover, the projection of each conductive component 20 on the same base layer group 10 on the plane where the first bus bar 61 is located is located on the first bus bar 61 . Therefore, the plurality of conductive components 20 dispersed on the base layer group 10 can be connected through the first bus bar 61 to improve the conduction efficiency of the electrochromic device and thereby increase the discoloration speed of the electrochromic device.

In the embodiment, the transition layer group 60 is light-transmissive, that is, the transition layer group 60 allows light to pass through. During the processing of the electrochromic device, the electrolyte layer 32 in the color-changing layer group 30 can be cured conveniently through ultraviolet curing to ensure the performance of the electrochromic device.

In some embodiments, along the thickness direction of the electrochromic device, the thickness of the two transition layer groups 60 is less than or equal to 15 μm, so as to prevent the electrochromic layer 31 and the counter electrode layer 33 from being too thick and affecting the performance of the electrochromic device. Color changing speed. For example, the thickness of the two transition layer groups 60 can be set to 2 μm, 5 μm, 7.5 μm, 9.2 μm, 10 μm, 13 μm, 14.5 μm, 15 μm, etc. respectively.

As shown in Figure 19, in some embodiments, the electrochromic device further includes a protective component 50. The protective assembly 50 may include a first bottom plate 51a, a second bottom plate 51b and a seal 52. Among them, the first base plate 51a is bonded to the side of the first base layer 11a away from the first conductive layer 12a through the first adhesive layer 53a. The second bottom plate 51b is bonded to the side of the second base layer 11b away from the second conductive layer 12b through the second adhesive layer 53b. The sealing member 52 may be disposed between the first bottom plate 51a and the second bottom plate 51b, and the sealing member 52 is simultaneously disposed around the circumference of the discoloration layer group 30 and the two base layer groups 10. That is, the color-changing layer group 30 and the two base layer groups 10 are enclosed in the protective assembly 50, and the protective assembly 50 provides protection for them. At the same time, the protective component 50 can also prevent water vapor and the like from intruding into the discoloration layer group 30 and the two base layer groups 10 to achieve a water vapor isolation effect.

Embodiment 5

The embodiment also provides a light modulating device, including the electrochromic device provided in any embodiment. In embodiments, the dimming device may be one of a dimming window, a rearview mirror, a display panel, and other devices.

Although the embodiments of the present application have been shown and described above, it can be understood that the above-mentioned embodiments are illustrative and cannot be understood as limitations of the present application. Those of ordinary skill in the art can make modifications to the above-mentioned embodiments within the scope of the present application. The embodiments are subject to changes, modifications, substitutions and variations.

Claims (16)

1. A device processing method, comprising:

providing at least one membrane substrate, wherein the membrane substrate comprises at least one basic layer group, and the basic layer group comprises a conductive layer and a basal layer which are arranged in a laminated manner;

a plurality of slotted holes are formed in the basic layer group, so that the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer;

and filling the slotted hole with a conductive component.

2. The device processing method according to claim 1, characterized in that the device processing method comprises:

providing two membrane substrates, wherein the two membrane substrates comprise a basic layer group;

And a plurality of slotted holes are respectively formed on the two basic layer groups, and in the same basic layer group, the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer.

3. The device processing method according to claim 2, wherein the base layer group is provided with a plurality of the slots from a side of the base layer away from the conductive layer.

4. The device processing method according to claim 2, wherein the forming a plurality of slots in two base layer groups respectively includes:

coating a mask layer on one side of the conductive layer far away from the substrate layer;

forming a plurality of slotted holes on the basic layer group from one side of the conductive layer far away from the substrate layer, so that the slotted holes penetrate through the conductive layer and the substrate layer in the same basic layer group;

and removing the mask layer.

5. The device processing method of claim 2, wherein the slot penetrates the conductive layer and the base layer in the same base layer group, the device processing method further comprising:

a transition layer group is arranged on one side of the conductive component far away from the substrate layer;

The roughness of the surface of the transition layer group, which is far away from the conductive component, is smaller than that of the surface of the conductive component, which is close to the conductive layer.

6. The device processing method of claim 5, wherein disposing a transition layer group on a side of the conductive assembly remote from the base layer comprises:

and coating gloss oil on one side of the conductive component far away from the substrate layer to form a gloss oil layer.

7. The device processing method of claim 5, wherein disposing a transition layer group on a side of the conductive assembly remote from the base layer comprises:

laying a first bus bar on one side of the conductive component away from the substrate layer;

and coating gloss oil on one side of the first bus bar far away from the conductive component, and forming a gloss oil layer.

8. The device processing method of claim 2, wherein the slot penetrates the conductive layer and the base layer in the same base layer group, the device processing method further comprising:

a first bus bar is routed on a side of the conductive assembly remote from the base layer.

9. The device processing method according to claim 7 or 8, wherein the first bus bar is made in synchronization with the conductive member with which it is in contact.

10. The device processing method according to any one of claims 2 to 8, characterized in that the device processing method further comprises:

and combining the two basic layer groups, and forming a color-changing layer group between the two conductive layers in the two basic layer groups.

11. The device processing method of claim 10, wherein assembling the two base layer groups and forming a color change layer group between the two conductive layers in the two base layer groups comprises:

coating an electrochromic layer on one side of the conductive layer far away from the basal layer in one basic layer group so as to form an electrochromic substrate;

coating a counter electrode layer on one side of the conductive layer far away from the base layer in the other base layer group to form a counter electrode substrate;

the counter electrode substrate is bonded to the electrochromic substrate through an electrolyte, and an electrolyte layer is formed between the electrochromic layer and the counter electrode layer.

12. The device processing method according to claim 2, characterized in that the device processing method further comprises:

a second bus bar is arranged on one side of the basal layer away from the conductive layer in one basic layer group, and the second bus bar is connected with each conductive component in the basic layer group;

And a third bus bar is arranged on one side of the basal layer away from the conductive layer in the other basal layer group, and the third bus bar is connected with each conductive component in the basal layer group.

13. The device processing method according to claim 1, characterized in that the device processing method comprises:

providing a membrane substrate, wherein the membrane substrate comprises a first basic group, a color-changing group and a second basic group which are sequentially stacked, and the conductive layers in the two basic groups are close to the color-changing group;

and sequentially arranging a plurality of slotted holes on the first basic group and the second basic group, wherein in the same basic group, the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer.

14. The device processing method of claim 13, further comprising:

a second bus bar is arranged on one side, far away from the color-changing layer group, of the first base layer group, and the second bus bar is connected with each conductive component in the first base layer group;

And a third bus bar is arranged on one side of the second basic layer group away from the color-changing layer group, and the third bus bar is connected with each conductive component in the second basic layer group.

15. The device processing method of claim 14, wherein the second bus bar is made in synchronization with the conductive component on the first foundation layer group;

the third bus bar is made in synchronization with the conductive component on the second basic block set.

16. The device processing method according to claim 1, 2 or 13, wherein the filling of the slot with the conductive member includes:

smearing conductive medium on the inner wall of the slot hole;

and filling the gaps of the conductive medium with curing glue.