CN116952420A - Sensor chip - Google Patents
Sensor chip Download PDFInfo
- Publication number
- CN116952420A CN116952420A CN202310823891.XA CN202310823891A CN116952420A CN 116952420 A CN116952420 A CN 116952420A CN 202310823891 A CN202310823891 A CN 202310823891A CN 116952420 A CN116952420 A CN 116952420A
- Authority
- CN
- China
- Prior art keywords
- layer
- sensor chip
- conductive
- pressure sensing
- sensing film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009434 installation Methods 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000000149 penetrating effect Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005289 physical deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The sensor chip comprises a first semiconductor layer, a substrate and a piezoresistor, wherein the sensor chip is provided with a cavity, the substrate comprises a pressure sensing film, the piezoresistor is connected with the pressure sensing film, and the pressure sensing film is positioned at the periphery of the cavity; the sensor chip comprises a connecting layer and a thermal resistor, wherein the connecting layer is connected with the first semiconductor layer, the connecting layer is provided with an installation cavity, the thermal resistor is at least partially positioned in the installation cavity, and the thermal resistor is connected with the connecting layer. The application can more firmly connect the thermal resistor with the first semiconductor layer.
Description
Technical Field
The application relates to the technical field of sensors, in particular to a sensor chip.
Background
The sensor chip is a core component for measuring pressure.
In the related art, a pressure sensor chip and a thermal resistor are arranged independently, when the pressure sensor chip and the thermal resistor are integrated, the thermal resistor is connected with a monocrystalline silicon semiconductor layer on the surface of the pressure sensor chip through a connecting layer, the thermal resistor is only connected with the surface of the connecting layer, and the thermal resistor is easy to fall off from the sensor chip. Therefore, how to connect the thermistor with the pressure sensor chip more firmly is a technical problem to be relieved.
Disclosure of Invention
The application provides a sensor chip, which comprises a first semiconductor layer, a substrate and a piezoresistor, wherein the sensor chip is provided with a cavity, the substrate comprises a pressure sensing film, the piezoresistor is connected with the pressure sensing film, and the pressure sensing film is positioned at the periphery of the cavity; the sensor chip comprises a connecting layer and a thermal resistor, wherein the connecting layer is connected with the first semiconductor layer, the connecting layer is provided with an installation cavity, the thermal resistor is at least partially positioned in the installation cavity, and the thermal resistor is connected with the connecting layer.
In the application, the connecting layer is provided with the mounting cavity, the thermal resistor is at least partially positioned in the mounting cavity, and the thermal resistor is more firmly connected with the sensor chip by positioning the thermal resistor in the mounting cavity.
Drawings
Fig. 1 is a schematic cross-sectional view of a sensor chip of the present application.
FIG. 2 is a schematic cross-sectional view of a sensor chip according to another embodiment of the application.
Fig. 3 is an enlarged schematic view of circle a in fig. 1 for showing the first connection portion and the thermistor.
Fig. 4 is a schematic partial cross-sectional view of the first connection portion and the thermistor of fig. 1, shown with the mounting cavity hidden.
Fig. 5 is a schematic cross-sectional view of the hidden connecting layer, the third conductive portion, and the thermistor of fig. 1, showing a communication via.
Fig. 6 is an enlarged schematic view of fig. 5 at circle B.
Fig. 7 is an enlarged schematic view of circle C in fig. 4 for showing the bottom wall and the side walls.
Detailed Description
Exemplary embodiments of the present application will be described in detail below with reference to the accompanying drawings. The features of the examples and embodiments described below may be combined with each other without conflict.
As shown in fig. 1 to 6, a sensor chip according to the present application includes: the sensor chip is provided with a cavity 11, the substrate 2 comprises a pressure sensing film 4, the pressure sensing film 4 is connected with the pressure sensing film 3, and the first semiconductor layer 1 and the pressure sensing film 4 are positioned at the periphery of the cavity 11; specifically, the first semiconductor layer 1 is single crystal silicon.
Referring to fig. 1 and 3, the sensor chip includes a connection layer 12, the connection layer 12 being connected to the first semiconductor layer 1, and a thermistor 5, the thermistor 5 being connected to the connection layer 12. Specifically, the connection layer 12 is a polymer material layer, and further the connection layer 12 is a photoresist or a dry film. Specifically, the thermistor 5 includes a metal layer including one or more of platinum, copper, and nickel, and further, the thermistor 5 includes a metal platinum layer. Specifically, the cavity 11 is in a vacuum state.
Specifically, four piezoresistors 3 are arranged, the four piezoresistors 3 are all connected with a pressure sensing film 4, the four piezoresistors 3 are electrically connected to form a Wheatstone bridge, and when in detection, the pressure sensing film 4 deforms to change the resistance of the four piezoresistors 3, and the pressure is measured through the change of current; further, the wheatstone bridge formed by the four piezoresistors 3 may be of the full bridge or half bridge or quarter bridge type.
The thermal resistor 5 is connected with the first semiconductor layer 1 through the connecting layer 12, so that the connection firmness of the thermal resistor 5 and the first semiconductor layer 1 is improved, the integration of the sensor chip and the temperature sensor is realized, and the whole volume of the sensor is reduced.
The sensor chip detects the temperature through the thermal resistor 5, when the temperature changes, the resistance value of the thermal resistor 5 changes, the temperature is detected through the change detection of the current, the thermal conductivity of the connecting layer 12 is poor, the influence of heat generated by the heat generating element of the sensor chip such as the piezoresistor 3 on the thermal resistor 5 can be reduced, and the detection precision of the thermal resistor 5 is improved.
In some embodiments, referring to fig. 1 and 4, the connection layer 12 has a mounting cavity 121, and the thermistor 5 is located at least partially in the mounting cavity 121. Specifically, the mounting cavity 121 is formed by recessing from the surface of the connection layer 12 facing away from the first semiconductor layer 1 to the inside of the connection layer 12, or, along the thickness direction Z of the pressure sensitive film 4, the mounting cavity 121 is disposed through the connection layer 12, or, the mounting cavity 121 is located in the connection layer 12; specifically, the thermistor 5 is at least partially exposed to the outside of the sensor chip, or the thermistor 5 is embedded in the connection layer 12; further, the mounting cavity 121 is formed by photolithography of the connection layer 12 to form the mounting cavity 121. Specifically, the thermistor 5 is attached to the groove wall of the mounting cavity 121 by means of physical deposition.
In some embodiments, referring to fig. 4 and 7, the connecting layer 12 has a bottom wall 123 and a side wall 124, the bottom wall 123 and the side wall 124 are all located at the periphery of the mounting cavity 121, the bottom wall 123 is at least partially closer to the cavity 11 than the side wall 124, and the bottom wall 123 and the side wall 124 are all connected to the thermistor 5; alternatively, the connection layer 12 has only the sidewall 124, the sidewall 124 is located at the periphery of the mounting cavity 121, the thermistor 5 is connected to the sidewall 124, and the thermistor 5 is connected to the first semiconductor layer 1; specifically, the bottom wall 123 may be flat or uneven, and the uneven bottom wall 123 further improves the connection firmness between the connection layer 12 and the thermistor 5.
The thermal resistor 5 is conveniently aligned in the manufacturing process by arranging the mounting cavity 121 on the connecting layer 12, so that as many thermal resistors 5 as possible can be concentrated in the mounting cavity 121 in the physical deposition process, the thermal resistors 5 are connected with the bottom wall 123 and the side wall 124, the thermal resistors 5 and the connecting layer 12 are added, and the waste of materials is reduced to a certain extent.
In some embodiments, referring to fig. 1 and 3, the sensor chip includes a first connection portion 51, and the first connection portion 51 is connected to the thermistor 5. Specifically, two first connection portions 51 are provided, the first connection portions 51 include a first solder ball, the first solder ball is physically and electrically connected to the thermistor 5, and further, the first solder ball is connected to the thermistor 5 by a reflow soldering technique. The first connection portion 51 facilitates soldering connection of the thermistor 5 to an external circuit board.
In some embodiments, a direction perpendicular to the thickness direction Z of the pressure-sensitive film 4 is defined as a horizontal direction X along which the thermistor 5 is located on one side of the cavity 11.
In some embodiments, referring to fig. 1 and 2, along the thickness direction Z of the pressure sensitive film 4, the cavity 11 is located between the thermistor 5 and the pressure sensitive film 4. The overall volume of the sensor chip can be further reduced, and if the thermistor 5, the cavity 11, and the pressure sensitive film 4 are not distributed in the thickness direction Z of the pressure sensitive film 4, the extra first semiconductor layer 1 is required to receive the thermistor 5, and the area of the first semiconductor layer 1 is increased.
In some embodiments, referring to fig. 1 and 5, the first semiconductor layer 1 has a communication via 13, and the communication via 13 is recessed from the first semiconductor layer 1 from a side of the first semiconductor layer 1 away from the substrate 2; the communication via hole 13 is provided penetrating the first semiconductor layer 1 in the thickness direction Z of the pressure-sensitive film 4.
Referring to fig. 1 and 5, the sensor chip includes a lead-out portion 6, the lead-out portion 6 includes a first conductive layer 61, a hole wall of the communication through hole 13 is located at a periphery of the first conductive layer 61, the first conductive layer 61 is electrically connected with the varistor 3, the first conductive layer 61 is at least partially located outside the first semiconductor layer 1, the sensor chip includes a filling portion 122, the filling portion 122 is connected with the connection layer 12, the filling portion 122 is located at the communication through hole 13, the first conductive layer 61 is located at a periphery of the filling portion 122, and the connection layer 12 is located at a side of the first conductive layer 61 facing away from the substrate 2. Specifically, the first conductive layer 61 is copper, aluminum or copper-aluminum alloy, the filling portion 122 is a polymer material or a metal oxide layer, further, the filling portion 122 is a dry film, a photoresist or tin oxide, the filling portion 122 and the connecting layer 12 are integrated, four lead-out portions 6 are provided, the four piezoresistors 3 are in one-to-one correspondence with the four lead-out portions 6, and the four lead-out portions 6 are all located on the same side of the piezoresistors 3.
The current generated by the piezoresistor 3 is led out to the outer side of the sensor chip, and the lead-out parts 6 are arranged on the same side of the piezoresistor 3, so that the four lead-out parts 6 are electrically connected with the same circuit board conveniently; the filling part 122 fills the communication through holes 13 which are not filled by the first conductive layer 61, so that on one hand, the material of the first conductive layer 61 is reduced, and the material is saved; on the other hand, the filling portion 122 and the connection layer 12 protect the entire sensor chip from plating and etching.
Specifically, referring to fig. 1 and 4, the sensor chip further includes a third insulating layer 71 and a fourth insulating layer 72, the third insulating layer 71 is attached to the hole wall of the communication through hole 13, the fourth insulating layer 72 is located at a side of the first semiconductor layer 1 facing away from the substrate 2, the fourth insulating layer 72 and the third insulating layer 71 are integrated, the first conductive layer 61 includes an extension portion 611 and an attachment portion 612, the attachment portion 612 is attached to the third insulating layer 71, the extension portion 611 is located at a side of the first semiconductor layer 1 facing away from the substrate 2, the extension portion 611 is attached to the fourth insulating layer 72, and the extension portion 611 and the attachment portion 612 are integrated. Further, the fourth insulating layer 72 and the third insulating layer 71 are silicon dioxide, and the first conductive layer 61 is attached to the third insulating layer 71 and the fourth insulating layer 72 by physical deposition.
By separating the first conductive layer 61 from the first semiconductor layer 1 by the third insulating layer 71 and the fourth insulating layer 72, the possibility of the current to be detected flowing to the first semiconductor layer 1 is reduced, and the detection accuracy is improved.
In some embodiments, referring to fig. 1 and 4, the sensor chip includes a second insulating layer 7, the second insulating layer 7 being located between the first semiconductor layer 1 and the pressure sensing film 4 in a thickness direction Z of the pressure sensing film 4, the second insulating layer 7 being connected to the first semiconductor layer 1, the second insulating layer 7 being connected to the pressure sensing film 4, and a cavity 11 being recessed from the second insulating layer 7 to the inside of the first semiconductor layer 1; specifically, in the thickness direction Z of the pressure-sensitive film 4, the communication through-holes 13 are provided penetrating the second insulating layer 7, and the second insulating layer 7 is silica.
In some embodiments, referring to fig. 1 and 4, the pressure sensing film 4 includes a first insulating layer 41 and a second semiconductor layer 42, the first insulating layer 41 is located on a side of the first semiconductor layer 1 facing away from the connection layer 12, the second semiconductor layer 42 is connected with the first insulating layer 41, the piezoresistor 3 is located in the second semiconductor layer 42, the piezoresistor 3 and the connection layer 12 are respectively located on two sides of the cavity 11 along a thickness direction Z of the pressure sensing film 4, and the substrate 2 is located on a side of the second semiconductor layer 42 facing away from the first insulating layer 41.
In a higher temperature environment, partial induced current generated by the piezoresistor 3 is reduced by the first insulating layer 41 and the second insulating layer 7 and flows to the first semiconductor layer 1, so that the accuracy of pressure detection is improved.
Specifically, the first insulating layer 41 is located on a side of the second insulating layer 7 away from the first semiconductor layer 1, the first insulating layer 41 is connected with the second insulating layer 7, the first insulating layer 41 is silicon dioxide, or the first insulating layer 41 is silicon dioxide or silicon nitride, further, the quality of the first insulating layer 41 is higher than that of the second insulating layer 7, the silicon dioxide purity of the first insulating layer 41 is higher than that of the second insulating layer 7, and the piezoresistor 3 is connected with the first insulating layer 41.
Referring to fig. 1 and 4, the sensor chip includes a fifth insulating layer 73, the fifth insulating layer 73 is located at a side of the second semiconductor layer 42 facing away from the first insulating layer 41, the fifth insulating layer 73 is connected with the second semiconductor layer 42, the substrate 2 is located at a side of the fifth insulating layer 73 facing away from the second semiconductor layer 42, and the substrate 2 is connected with the fifth insulating layer 73.
Referring to fig. 1 and 4, the substrate 2 has a back pressure chamber 21, the back pressure chamber 21 is recessed from an end surface of the substrate 2 facing away from the fifth insulating layer 73 to an inside of the substrate 2, and the fifth insulating layer 73 is penetrated such that the second semiconductor layer 42 is at least partially exposed to an outside of the sensor chip, the substrate 2 is monocrystalline silicon, and the back pressure chamber 21 is formed by etching the substrate 2.
In some embodiments, referring to fig. 5 and 6, the lead portion 6 further includes a conductive resistor 62 and a second conductive layer 63, the conductive resistor 62 is located in the pressure sensitive film 4, the conductive resistor 62 is physically and electrically connected to the varistor 3, the second conductive layer 63 is electrically connected to the first conductive layer 61, and the second conductive layer 63 is electrically connected to the conductive resistor 62.
Specifically, referring to fig. 5 and 6, a direction perpendicular to the thickness direction Z of the pressure sensitive film 4 is defined as a horizontal direction X, the conductive resistors 62 and the piezoresistors 3 are distributed in the horizontal direction, the conductive resistors 62 and the four piezoresistors 3 form a wheatstone bridge, the conductive resistors 62 are connected to the first insulating layer 41, the second conductive layer 63 includes a penetrating portion 631 and an embedded portion 632, the penetrating portion 631 is located in the first insulating layer 41, one end of the penetrating portion 631 is physically and electrically connected to the conductive resistors 62, the embedded portion 632 is located between the communication through hole 13 and the first insulating layer 41, and the embedded portion 632 and the penetrating portion 631 are integrated. Further, the second conductive layer 63 is aluminum or copper or aluminum copper alloy, and the embedded portion 632 is physically and electrically connected to the first conductive layer 61.
In some embodiments, referring to fig. 5 and 6, the lead-out portion 6 further includes a second connection portion 64 and a third conductive layer 65, the third conductive layer 65 is physically and electrically connected to the first conductive layer 61, the third conductive layer 65 is at least partially exposed to the outside of the sensor chip, and the second connection portion 64 is physically and electrically connected to the third conductive layer 65.
Specifically, the third conductive layer 65 is located on the connection layer 12, the third conductive layer 65 and the first conductive layer 61 are integrated, and the third conductive layer 65 is copper or aluminum or copper-aluminum alloy; the second connection portion 64 includes a second solder ball connected to a portion of the third conductive layer 65 exposed to the outside of the sensor chip, and the second connection portion 64 is connected to the third conductive layer 65 by a reflow technique.
In some embodiments, the conductive resistor 62 and the varistor 3 are both silicon-doped with boron, and the conductive resistor 62 is doped with boron at a concentration greater than the concentration of boron doped by the varistor 3. Specifically, the conductive resistor 62 and the varistor 3 are formed by doping boron on the second semiconductor layer 42 of single crystal silicon.
The above embodiments are only for illustrating the present application and not for limiting the technical solutions described in the present application, and it should be understood that the present application should be based on those skilled in the art, and although the present application has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made to the present application without departing from the spirit and scope of the present application and modifications thereof should be covered by the scope of the claims of the present application.
Claims (10)
1. The sensor chip is characterized by comprising a first semiconductor layer, a substrate and a piezoresistor, wherein the sensor chip is provided with a cavity, the substrate comprises a pressure sensing film, the piezoresistor is connected with the pressure sensing film, and the pressure sensing film is positioned at the periphery of the cavity;
the sensor chip comprises a connecting layer and a thermal resistor, wherein the connecting layer is connected with the first semiconductor layer, the connecting layer is provided with an installation cavity, the thermal resistor is at least partially positioned in the installation cavity, and the thermal resistor is connected with the connecting layer.
2. The sensor chip of claim 1, wherein: the connecting layer is a high polymer material layer or a metal oxide layer, and the thermistor is at least partially exposed to the outside of the sensor chip; the connecting layer is provided with a bottom wall and a side wall, the bottom wall and the side wall are both positioned at the periphery of the mounting cavity, the bottom wall is at least partially closer to the cavity than the side wall, the bottom wall and the side wall are both connected with the thermal resistor, or the thermal resistor is connected with the side wall, and the thermal resistor is connected with the first semiconductor layer;
the sensor chip comprises a first connecting part, and the first connecting part is electrically connected with the thermal resistor.
3. The sensor chip of claim 2, wherein: the thermistor comprises a metal layer, wherein the metal layer comprises at least one of platinum, copper and nickel;
the first connecting portion comprises a first tin ball, the first tin ball is physically connected with the thermal resistor and electrically connected with the thermal resistor, and the first tin ball is at least partially exposed to the outside of the sensor chip.
4. A sensor chip according to any one of claims 1-3, characterized in that: defining a direction perpendicular to the thickness direction of the pressure sensing film as a horizontal direction, and along the thickness direction of the pressure sensing film, the cavity is positioned between the thermal resistor and the pressure sensing film;
or along the horizontal direction, the thermistor is positioned at one side of the cavity;
the cavity is in a vacuum state.
5. The sensor chip of claim 1, wherein: the first semiconductor layer is provided with a communication through hole, the communication through hole penetrates through the first semiconductor layer, the sensor chip comprises a lead-out part, the lead-out part is at least partially positioned in the communication through hole, and the lead-out part is electrically connected with the piezoresistor;
the sensor chip comprises a filling part, the filling part is connected with the connecting layer, the filling part is positioned in the communication through hole, the filling part is connected with the leading-out part, and the leading-out part is positioned between the substrate and the connecting layer along the thickness direction of the pressure sensing film.
6. The sensor chip of claim 5, wherein: the pressure sensing film comprises a first insulating layer and a second semiconductor layer, the first insulating layer is positioned at one side of the first semiconductor layer, which is away from the connecting layer, the second semiconductor layer is connected with the first insulating layer, and the piezoresistor is positioned in the second semiconductor layer;
along the thickness direction of the pressure sensing film, the piezoresistor and the connecting layer are respectively positioned at two sides of the cavity, and the substrate is positioned at one side of the second semiconductor layer, which is away from the first insulating layer.
7. The sensor chip of claim 5, wherein: the lead-out part further comprises a first conductive layer, a conductive resistor and a second conductive layer; the first conductive layer is positioned in the communication through hole, and the filling part is connected with the first conductive layer; the conductive resistor is positioned in the pressure sensing film and is electrically connected with the piezoresistor;
along the thickness direction of the pressure sensing film, the second conductive layer is located between the first conductive layer and the conductive resistor, the second conductive layer is electrically connected with the first conductive layer, and the second conductive layer is electrically connected with the conductive resistor.
8. The sensor chip of claim 7, wherein: the conductive resistor and the piezoresistor are both silicon doped with boron, and the concentration of boron doped in the conductive resistor is larger than that of boron doped in the piezoresistor; the second conductive layer is aluminum or copper or aluminum copper alloy, and the first conductive layer is aluminum or copper or aluminum copper alloy.
9. The sensor chip of claim 7, wherein: the first conductive layer is at least partially positioned at one side of the first semiconductor layer, the lead-out part further comprises a second connecting part and a third conductive layer, the third conductive layer is electrically connected with the first conductive layer, the third conductive layer is at least partially exposed outside the sensor chip, the second connecting part is electrically connected with the third conductive layer, and the second connecting part is at least partially exposed outside the sensor chip;
the second connecting part comprises a second tin ball, and the second tin ball is electrically connected with the third conductive layer.
10. The sensor chip of claim 1, wherein: the sensor chip comprises a second insulating layer, the second insulating layer is located between the first semiconductor layer and the pressure sensing film along the thickness direction of the pressure sensing film, the second insulating layer is connected with the first semiconductor layer, the second insulating layer is connected with the pressure sensing film, the cavity penetrates through the second insulating layer, and the first semiconductor layer is provided with a part of the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310823891.XA CN116952420A (en) | 2023-07-05 | 2023-07-05 | Sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310823891.XA CN116952420A (en) | 2023-07-05 | 2023-07-05 | Sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116952420A true CN116952420A (en) | 2023-10-27 |
Family
ID=88445458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310823891.XA Pending CN116952420A (en) | 2023-07-05 | 2023-07-05 | Sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116952420A (en) |
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2023
- 2023-07-05 CN CN202310823891.XA patent/CN116952420A/en active Pending
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