CN116946970A - Preparation method of micro fluid pumping device and micro fluid pumping device - Google Patents
Preparation method of micro fluid pumping device and micro fluid pumping device Download PDFInfo
- Publication number
- CN116946970A CN116946970A CN202310929324.2A CN202310929324A CN116946970A CN 116946970 A CN116946970 A CN 116946970A CN 202310929324 A CN202310929324 A CN 202310929324A CN 116946970 A CN116946970 A CN 116946970A
- Authority
- CN
- China
- Prior art keywords
- soi
- bonding
- glass substrate
- pumping device
- pump body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005086 pumping Methods 0.000 title claims abstract description 42
- 239000012530 fluid Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000005459 micromachining Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000007514 turning Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000010923 batch production Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 229910001415 sodium ion Inorganic materials 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/02—Adapting objects or devices to another
- B01L2200/026—Fluid interfacing between devices or objects, e.g. connectors, inlet details
- B01L2200/027—Fluid interfacing between devices or objects, e.g. connectors, inlet details for microfluidic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Hematology (AREA)
- Clinical Laboratory Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a preparation method of a micro fluid pumping device and the micro fluid pumping device, wherein the preparation method comprises the following steps: s1, preparing an SOI silicon wafer into an SOI pump body based on MEMS micro-machining technology; s2, bonding the first glass substrate with the first surface of the SOI pump body by utilizing an anode bonding process to form a bonding sample piece; s3, conducting anode on the bonding sample wafer, so that the SOI pump body can be connected with an anode in the process of bonding a second glass substrate on the second surface of the SOI pump body; and S4, bonding the second glass substrate with the second surface of the SOI pump body by utilizing an anodic bonding process to form the micro fluid pumping device. The invention is suitable for preparing the fluid pumping device with small volume, has simple process, convenient operation, high production efficiency and low production cost, and is suitable for batch production.
Description
Technical Field
The invention relates to the field of fluid pumps, in particular to a preparation method of a micro fluid pumping device and the micro fluid pumping device.
Background
In recent years, research on medical micro-fluidic systems has been actively conducted by micro-pump chips and the like. The micro-fluidic system is a micro total analysis system (mu-TAS) integrating analysis functions such as sampling, dilution, reagent addition, reaction, separation, detection and the like into a whole to the greatest extent, and is an important development front in a plurality of fields such as new century analysis science, micro-electromechanical processing, life science, chemical synthesis, analysis instruments, environmental science and the like. The micro pump device is a key component of the micro flow control chip and is a core for controlling the flow direction and the flow rate of fluid in the micro flow control system.
At present, micro-flow pumping devices are mostly manufactured by machining, and have the following defects:
1. traditional fluid pumping devices are bulky (> 1 cm) 3 ) And the integration level is low.
2. The valve pump assembly of the traditional pumping device needs to be assembled with high precision, and has high assembly difficulty, high cost and low batch manufacturing efficiency.
3. The liquid pumping precision is low, and nano liter (nL) level micro fluid pumping control is not satisfied.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a preparation method of a micro fluid pumping device, which is suitable for preparing a small-volume fluid pumping device, and has the advantages of simple process, convenient operation, high production efficiency, low production cost and suitability for batch production.
In order to solve the technical problems, the technical scheme of the invention is as follows: a method of fabricating a microfluidic pumping device, the method comprising:
s1, preparing an SOI silicon wafer into an SOI pump body based on MEMS micro-machining technology;
s2, bonding the first glass substrate with the first surface of the SOI pump body by utilizing an anode bonding process to form a bonding sample piece;
s3, conducting anode on the bonding sample wafer, so that the SOI pump body can be connected with an anode in the process of bonding a second glass substrate on the second surface of the SOI pump body;
and S4, bonding the second glass substrate with the second surface of the SOI pump body by utilizing an anodic bonding process to form the micro fluid pumping device.
Further, step S3 includes:
s31, coating a protective adhesive layer on the surface, far away from the SOI pump body, of the first glass substrate;
s32, sputtering a conductive metal layer on the surface of the first glass substrate far away from the SOI pump body and the circumferential side wall of the bonding sample piece;
s3, stripping the conductive metal layer and the protective adhesive layer on the surface, far away from the SOI pump body, of the first glass substrate, and completing anode conduction by the residual conductive metal layer on the bonding sample piece.
Further, step S3 includes:
s31, turning over the bonding sample piece to enable the first glass substrate to face downwards and press the first glass substrate on the graphite piece;
and S32, applying a load on the second glass substrate to enable the graphite sheet to elastically wrap the circumferential side walls of the SOI pump body and the first glass substrate, and completing anode conduction by utilizing the graphite sheet.
Further, step S1 includes:
s11, processing a flow passage and an inlet and outlet valve structure on the first surface of the SOI silicon wafer;
s12, processing a runner inlet and outlet hole and a transmission boss on the second surface of the SOI silicon wafer;
s13, using HF dry etching to open the flow channel and the flow channel inlet and outlet holes and release the inlet valve membrane structure.
Further, step S11 includes:
s111, forming patterns of a flow channel and an inlet and an outlet on the first surface of the SOI silicon wafer by photoetching, developing and etching, etching the patterns to a required depth by a deep-rie deep silicon process, and removing photoresist;
and S112, coating photoresist again at the graph, etching a corresponding region to the SOI buried oxide layer of the SOI silicon wafer through a deep-rie deep silicon process after photoetching development, and then completing a photoresist removing process.
Further, step S12 includes:
and photoetching and developing the second surface of the SOI silicon wafer, and etching a corresponding area to the SOI buried oxide layer to finish the preparation of the runner inlet and outlet holes and the transmission boss.
Further, before bonding the first glass substrate to the first surface of the SOI body using the anodic bonding process, further comprising:
and growing TiW metal on the first glass substrate by utilizing a sputtering process, performing gluing, photoetching and developing, then performing wet etching by utilizing double-positive water to finish the pattern preparation of the bonding-preventing layer, and performing a photoresist removing process.
The invention also provides a micro fluid pumping device, which is prepared by adopting the preparation method of the micro fluid pumping device.
After the technical scheme is adopted, the MEMS micro-machining technology is adopted to machine the SOI silicon wafer, so that complex chemical etching and mechanical machining methods are avoided, the etching precision is high, the pump cavity tightness is ensured through an anodic bonding process, and before the second anodic bonding, the anode conduction treatment is carried out on the bonding sample piece formed after the first anodic bonding, so that the anode conduction of the SOI silicon wafer can still be finished under the condition that the two sides of the SOI silicon wafer are covered by glass to carry out the second anodic bonding, the whole process is simple, the operation is convenient, the production efficiency is high, the production cost is low, and the method is suitable for batch production.
Drawings
FIG. 1 is a process diagram of a microfluidic pumping device of the present invention;
FIG. 2 is a process diagram of an anodic conductive treatment according to the present invention;
FIG. 3 is a process diagram of another anode turn-on treatment according to the present invention;
FIG. 4 is an exploded view of a perspective view of a fan type inlet valve straight flow channel micropump of the present invention;
FIG. 5 is an exploded view of another view of the fan inlet valve straight flow micro pump of the present invention;
FIG. 6 is a schematic diagram of the structure of the U-shaped flow pump of the butterfly inlet valve of the present invention;
FIG. 7 is an exploded view of the butterfly inlet valve U-shaped flow path pump of the present invention;
in the figure, 1, an SOI silicon wafer; 11. an SOI buried oxide layer; 2. a protective adhesive layer, a 3 and a conductive metal layer; 4. a graphite sheet; 5. TiW metal; 10. an SOI pump body; 20. a first glass substrate; 30. a second glass substrate.
Detailed Description
In order that the present disclosure may be more readily understood, the invention will now be described in further detail with reference to specific embodiments thereof in conjunction with the accompanying drawings.
As shown in fig. 1, 2 and 3, a method for manufacturing a micro fluid pumping device, the method comprises:
s0, as shown in FIG. 1 (a), the SOI silicon wafer 1 has an SOI buried oxide layer 11 in the middle of the SOI silicon wafer 1, the SOI buried oxide layer 11 being SiO 2 A layer.
S1, preparing an SOI silicon wafer 1 into an SOI pump body 10 based on MEMS micro-machining technology:
s11, processing a flow passage and an inlet and outlet valve structure on the first surface of the SOI silicon wafer 1, which specifically comprises the following steps:
s111, forming a pattern of a flow channel and an inlet and an outlet on the first surface of the SOI silicon wafer 1 by photoetching, developing and etching, and etching the pattern to a required depth by a deep-silicon process of deep-rie, wherein the depth determines the thickness of a pump film and an inlet valve film, and a photoresist removing process is performed after the completion, as shown in FIG. 1 (b); the depressed area in the center of the first surface in fig. 1 (b) is the pump film;
s112, photoresist is coated again on the graph, and the photoresist coating surface is provided with a graph structure and concave-convex surface after the first etching, wherein a photoresist spraying process is preferred, after the photoetching development, the corresponding area is etched to the SOI buried oxide layer 11 of the SOI silicon chip 1 through a deep-rie deep silicon process, and then a photoresist removing process is completed, as shown in fig. 1 (c);
s12, processing a runner inlet and outlet hole and a transmission boss on the second surface of the SOI silicon wafer 1, which specifically comprises the following steps:
photoetching and developing the second surface of the SOI silicon wafer 1, and etching a corresponding area to the SOI buried oxide layer 11 to finish the preparation of a runner inlet and outlet hole and a transmission boss, as shown in fig. 1 (d); in fig. 1 (d), the etched portions on both sides of the second surface are runner access holes, and the remaining portion in the center of the second surface is a transmission boss;
s13, performing HF dry etching, opening a runner and a runner inlet and outlet hole, and releasing an inlet valve membrane structure to finish pump body preparation, as shown in FIG. 1 (e);
s2, growing TiW metal 5 on a first glass substrate 20 by utilizing a sputtering process, performing gluing, photoetching and developing, then performing wet etching by utilizing double positive water to finish the preparation of a pattern of an anti-bonding layer so as to prevent bonding between a runner bottom inlet and outlet valve structure and the first glass substrate 20, performing a photoresist removing process, and bonding the first glass substrate 20 with the first surface of an SOI pump body 10 by utilizing an anode bonding process to form a bonding sample, as shown in fig. 1 (f);
before the first anodic bonding, the SOI pump body 10 and the first glass substrate 20 are subjected to a surface activation treatment, preferably an oxygen plasma treatment, and then immediately subjected to an anodic bonding process, the preferred parameters are as follows: 335 ℃,700mbar, -600V.
S3, conducting the anode on the bonding sample wafer, so that the SOI pump body 10 can be connected with the anode in the process of bonding the second glass substrate 30 on the second surface of the SOI pump body, as shown in FIG. 2 or FIG. 3;
s4, drilling the second glass substrate 30 by using a laser drilling process, and bonding the second glass substrate 30 to the second surface of the SOI pump body 10 by using an anodic bonding process, thereby forming a micro fluid pumping device, as shown in fig. 1 (g). Wherein holes are punched in the positions of the second glass substrate 30, which are opposite to the runner inlet and outlet holes and the transmission bosses. The parameters of the second anodic bonding may be consistent with the first.
Anodic bonding is an electrochemical process that relies on polarization of alkali-containing glass by placing the bonded sheet at a corresponding temperature (300 ℃ -450 ℃) and applying a high direct voltage (400-1000V in magnitude).
When a direct voltage is applied to this glass at high temperature, the alkali cations are depleted from the vicinity of the anode and transported to the cathode. For most glasses used for anodic bonding, conduction is primarily achieved by Na ions, which when positively charged Na ions are transferred to the cathode, leave a Na ion depletion layer (depleted region) near the anode where a large electrostatic field persists, holding the bonding face at a considerable electrostatic pressure, where the silicon and glass are in intimate contact and chemical reaction occurs at the interface, resulting in oxidation of the silicon substrate, thereby forming permanent atomic bonds between the silicon and glass.
Irreversible bonding, bonding and after completion, the front glass cannot be used as a good Anode contact surface due to Na ion exhaustion, so that the bonding second surface needs to be anodized, and in this embodiment, the anodic conduction treatment of the bonding sample wafer can be performed in various ways, and two modes are listed.
As shown in fig. 2, the first:
s31, coating a protective adhesive layer 2 on the surface of the first glass substrate 20, which is far away from the SOI pump body 10, as shown in FIG. 2 (a);
s32, sputtering a conductive metal layer 3 on the surface of the first glass substrate 20 far from the SOI pump body 10 and the circumferential side wall of the bonding sample piece, as shown in FIG. 2 (b);
s33, stripping off the conductive metal layer 3 and the protective adhesive layer 2 of the surface of the first glass substrate 20 far away from the SOI pump body 10, and preferentially using a lift-off process, wherein the rest conductive metal layer 3 on the bonding sample sheet completes anode conduction, as shown in FIG. 2 (c).
Finally, anodic bonding of the second glass substrate 30 to the SOI body 10 is achieved, as shown in fig. 2 (d).
Second kind:
s30, FIG. 3 (a) is a schematic diagram after the first bonding is completed;
s31, turning the bonding sample piece to enable the first glass substrate 20 to face downwards and pressing the first glass substrate on the graphite sheet 4;
s32, a load is applied to the second glass substrate 30, so that the graphite sheet 4 elastically wraps the circumferential side walls of the SOI pump body 10 and the first glass substrate 20, and anode conduction is completed by the graphite sheet 4, as shown in fig. 3 (b), the load is not shown.
In the embodiment, the MEMS micro-machining technology is adopted to machine the SOI silicon wafer 1, so that complex chemical etching and mechanical machining methods are avoided, the etching precision is high, the pump cavity tightness is ensured through an anodic bonding technology, and before the second anodic bonding, the anode conduction treatment is carried out on the bonding sample wafer formed after the first anodic bonding, so that the anode conduction of the SOI silicon wafer 1 can still be completed to carry out the second anodic bonding under the condition that the two surfaces of the SOI silicon wafer 1 are covered by glass, the whole technology is simple, the operation is convenient, the production efficiency is high, the production cost is low, and the method is suitable for batch production.
Example two
A micro fluid pumping device is manufactured by the manufacturing method of the micro fluid pumping device in the first embodiment.
The micro fluid pumping device adopts a glass-silicon-glass three-layer structure, and is connected through an anodic bonding process to ensure the tightness of a pump cavity; driving force is transmitted to the pump membrane through the transmission boss, the volume of the pump cavity is changed, and the flow direction control of liquid is realized by using the inlet and outlet one-way valve. When the pump film compresses liquid in the pump cavity, the outlet valve is forced to open, the inlet valve is forced to close, and the liquid in the cavity is pumped out; when the pump film is moved from the first glass substrate 20 to the second glass substrate 30, the inlet valve is opened under force, the outlet valve is closed, and liquid is sucked, so that the unidirectionality of the fluid is ensured, and the upper and lower limit of the movable position of the pump film is realized by utilizing the first glass substrate 20 and the second glass substrate 30, so that the variable volume in the cavity is fixed, the pumping quantity of liquid per cycle is ensured, and the purpose of high-precision control is achieved. The working principle is schematically shown in figure 4. The control method of the pumping rate and the minimum pumping quantity is as follows:
taking the pump film phi 4800 μm, the pump film thickness 26 μm, the pump cavity height H24 μm, the transmission boss phi 2800 μm as an example, the variable volume V=1/3×H×pi (R 2 +R*r+r 2 ) = 278.3nL, where R is the pump membrane radius, R is the drive boss radius, and the minimum pumping volume per pump is controlled by designing the pump cavity height and pump membrane and drive boss parameters.
The micro fluid pumping device can be a fan type inlet valve straight flow channel micro pump, as shown in fig. 4 and 5, and can also be a butterfly type inlet valve U-shaped flow channel pump, as shown in fig. 6 and 7.
With the above-described preferred embodiments according to the present invention as an illustration, the above-described descriptions can be used by persons skilled in the relevant art to make various changes and modifications without departing from the scope of the technical idea of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (8)
1. A method for preparing a micro fluid pumping device is characterized in that,
the method comprises the following steps:
s1, preparing an SOI silicon wafer (1) into an SOI pump body (10) based on MEMS micro-machining technology;
s2, bonding a first glass substrate (20) with a first surface of the SOI pump body (10) by utilizing an anode bonding process to form a bonding sample;
s3, conducting the bonding sample wafer with an anode, so that the SOI pump body (10) can be connected with the anode in the process of bonding the second glass substrate (30) on the second surface of the SOI pump body;
and S4, bonding the second glass substrate (30) with the second surface of the SOI pump body (10) by utilizing an anodic bonding process to form the micro fluid pumping device.
2. The method of manufacturing a micro fluid pumping device according to claim 1, wherein,
the step S3 comprises the following steps:
s31, coating a protective adhesive layer (2) on the surface, far away from the SOI pump body (10), of the first glass substrate (20);
s32, sputtering a conductive metal layer (3) on the surface of the first glass substrate (20) far away from the SOI pump body (10) and the circumferential side wall of the bonding sample wafer;
s33, stripping off the conductive metal layer (3) and the protective adhesive layer (2) on the surface, far away from the SOI pump body (10), of the first glass substrate (20), wherein the residual conductive metal layer (3) on the bonding sample sheet completes anode conduction.
3. The method of manufacturing a micro fluid pumping device according to claim 1, wherein,
the step S3 comprises the following steps:
s31, turning over the bonding sample piece to enable the first glass substrate (20) to face downwards and press the first glass substrate onto the graphite sheet (4);
s32, applying a load on the second glass substrate (30) to enable the graphite sheet (4) to elastically wrap the circumferential side walls of the SOI pump body (10) and the first glass substrate (20), and completing anode conduction by utilizing the graphite sheet (4).
4. The method of manufacturing a micro fluid pumping device according to claim 1, wherein,
the step S1 comprises the following steps:
s11, processing a flow passage and an inlet and outlet valve structure on the first surface of the SOI silicon wafer (1);
s12, processing a runner inlet and outlet hole and a transmission boss on the second surface of the SOI silicon wafer (1);
s13, using HF dry etching to open the flow channel and the flow channel inlet and outlet holes and release the inlet valve membrane structure.
5. The method of manufacturing a micro fluid pumping device according to claim 4, wherein,
the step S11 includes:
s111, forming patterns of a flow channel and an inlet and an outlet on the first surface of the SOI silicon wafer (1) by photoetching, developing and etching, etching the patterns to a required depth by a deep-rie deep silicon process, and removing photoresist;
and S112, coating photoresist again at the pattern, etching a corresponding region to the SOI buried oxide layer (11) of the SOI silicon wafer (1) through a deep-rie deep silicon process after photoetching development, and then completing a photoresist removing process.
6. The method of manufacturing a micro fluid pumping device according to claim 4, wherein,
step S12 includes:
and photoetching and developing the second surface of the SOI silicon wafer (1), and etching a corresponding area to the SOI buried oxide layer (11) to finish the preparation of the runner inlet and outlet holes and the transmission boss.
7. The method of manufacturing a micro fluid pumping device according to claim 1, wherein,
before bonding the first glass substrate (20) to the SOI pump body (10), it further comprises:
and growing TiW metal (5) on the first glass substrate (20) by utilizing a sputtering process, performing gluing, photoetching and developing, then performing wet etching by utilizing double positive water to complete the pattern preparation of the bonding-preventing layer, and performing photoresist removing process.
8. A micro fluid pumping device is characterized in that,
a method of manufacturing a microfluidic pumping device according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310929324.2A CN116946970A (en) | 2023-07-27 | 2023-07-27 | Preparation method of micro fluid pumping device and micro fluid pumping device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310929324.2A CN116946970A (en) | 2023-07-27 | 2023-07-27 | Preparation method of micro fluid pumping device and micro fluid pumping device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116946970A true CN116946970A (en) | 2023-10-27 |
Family
ID=88454342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310929324.2A Pending CN116946970A (en) | 2023-07-27 | 2023-07-27 | Preparation method of micro fluid pumping device and micro fluid pumping device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116946970A (en) |
-
2023
- 2023-07-27 CN CN202310929324.2A patent/CN116946970A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5962081A (en) | Method for the manufacture of a membrane-containing microstructure | |
| US6136212A (en) | Polymer-based micromachining for microfluidic devices | |
| US7075161B2 (en) | Apparatus and method for making a low capacitance artificial nanopore | |
| US6334761B1 (en) | Check-valved silicon diaphragm pump and method of fabricating the same | |
| US20040241004A1 (en) | Electroosmotic micropump with planar features | |
| JP3531027B2 (en) | Micro pumps and pump systems | |
| Fang et al. | Self-assembly of PZT actuators for micropumps with high process repeatability | |
| JP2004291187A (en) | Electrostatic microvalve and micropump | |
| JP3202643B2 (en) | Micropump and method of manufacturing micropump | |
| CN209940465U (en) | Microfluidic actuator | |
| US6716661B2 (en) | Process to fabricate an integrated micro-fluidic system on a single wafer | |
| US7648619B2 (en) | Hydrogel-driven micropump | |
| JP2012527559A (en) | Micro pump | |
| CN103808776B (en) | The preparation method of electrochemical sensor | |
| JP2004033919A (en) | Microfluidic control mechanism and microchip | |
| WO2008057068A2 (en) | Micro-aluminum galvanic cells and methods for constructing the same | |
| CN116946970A (en) | Preparation method of micro fluid pumping device and micro fluid pumping device | |
| US20030196900A1 (en) | Hydrogel-driven micropump | |
| JP4942135B2 (en) | Liquid feeding device | |
| Phi et al. | Wafer-level fabrication of an EWOD-driven micropump | |
| JP4325607B2 (en) | Micro regulator | |
| JP2006142242A (en) | Micro liquid control device | |
| JP4472919B2 (en) | Micro valve | |
| Kedzierski et al. | New generation of digital microfluidic devices | |
| JP4529619B2 (en) | Micro valve |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 213000 No. 17, beitanghe East Road, Tianning District, Changzhou City, Jiangsu Province Applicant after: Changzhou Yuanjingmo Microelectronics Co.,Ltd. Address before: No. 17 Beitang Hedong Road, Tianning District, Changzhou City, Jiangsu Province, 213100 Applicant before: CHANGZHOU YUANJING ELECTRONIC TECHNOLOGY CO.,LTD. Country or region before: China |