CN116885564A - Multi-section quantum well InP-based epitaxial wafer with wide spectrum gain - Google Patents
Multi-section quantum well InP-based epitaxial wafer with wide spectrum gain Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/3438—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on In(Al)P
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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Abstract
The application discloses a multi-section quantum well InP-based epitaxial wafer with wide spectrum gain, which relates to the technical field of semiconductor amplifier lasers, and the technical scheme is characterized by comprising an InP substrate, wherein an InP buffer layer, an n-InP limiting layer, an n-lGaInAs graded waveguide layer, a multi-section tunneling MQW active layer, a p-AlGaInAs graded waveguide layer, a p-InGaAsP corrosion stop layer, a p-InP limiting layer and a p-InGaAsP/InGaAs contact layer are sequentially epitaxially grown on the InP substrate; the device has the characteristics of compact structure, and can realize ultra-large bandwidth without multi-pipe splicing.
Description
Technical Field
The application relates to the technical field of semiconductor amplifier lasers, in particular to a multi-section quantum well InP-based epitaxial wafer with wide spectral gain.
Background
The semiconductor gain medium has the advantages of high gain, high conversion efficiency, flexible design, mature growth technology, long service life, small volume and the like. The research direction of quantum well lasers is mainly focused on InGaAlP-GaAs, gaAlAs-GaAs, inGaAsP-InP and other materials. The concept of strain quantum wells is proposed to optimize the valence band characteristics inside the material and improve the performance of semiconductor light emitting devices. The InP-based semiconductor gain material may cover a range of 1300-1600nm bands or even larger. With the increasing demand of broad spectrum light sources, such as laser radars, especially phased arrays, the wavelength of which is more than 200nm, the laboratory broad spectrum test light source is generally formed by combining and splicing a plurality of light sources. The cost is high, and the use is inconvenient; therefore, in order to solve the technical problems, the application provides a multi-section quantum well InP-based epitaxial wafer with wide spectral gain.
Disclosure of Invention
Aiming at the defects existing in the prior art, the application aims to provide a multi-section quantum well InP-based epitaxial wafer with wide spectral gain.
In order to achieve the above purpose, the present application provides the following technical solutions: a multi-section quantum well InP base epitaxial wafer with wide spectrum gain comprises an InP substrate, and an InP buffer layer, an n-InP limiting layer, an n-lGaInAs graded waveguide layer, a multi-section tunneling MQW active layer, a p-AlGaInAs graded waveguide layer, a p-InGaAsP corrosion stop layer, a p-InP limiting layer and a p-InGaAsP/InGaAs contact layer are sequentially epitaxially grown on the InP substrate.
Preferably, the InP substrate is an n-type substrate containing S element, and the doping concentration is 8×10 17 cm -3 Up to 1.2X10 18 cm -3 The crystal orientation is<100>Or have an offset angle of less than 5 degrees.
Preferably, the InP buffer layer has a thickness of 0.3 μm-0.6 μm and a doping concentration of 1×10 18 cm -3 Up to 3X 10 18 cm -3 。
Preferably, the n-InP confinement layer has a thickness of 0.5 μm to 1.0 μm, is doped n-type, and has a doping concentration of 1×10 18 cm -3 Up to 1.5X10 18 cm -3 。
Preferably, the thickness of the n-AlGaInAs graded waveguide layer is 0.2-0.25 μm, and the doping concentration is 1×10 17 cm -3 Up to 2X 10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein, each element component of AlGaInAs is required to meet the requirement of lattice matching with InP, and the wavelength is 1.2 microns; for [ Al (x) Ga]In (y) As expression, x varies from 0.7 to 0.9 and y is 0.53.
Preferably, the multi-section tunneling MQW active layer is formed by mutually arranging m multi-quantum well active structures and m-1 InP tunneling junctions at intervals, and the m value is smaller than 6; the whole thickness is 0.1-0.5 μm, and no intentional doping is performed; the active structure of m multiple quantum wells, the thickness of the well is 4-6nm, the material is AlGaInAs, the barrier thickness is 5-10nm, and the material is AlGaInAs; the number of the quantum wells is 1-10, and a strain high-limit band-order structure is adopted; m multiple quantum well active structures, each of which has different light emission wavelength, each group of multiple quantum wells having a design bandwidth of about 60nm; the coverage wavelength range is 60X m nanometers; the different luminous center wavelengths of each group of multi-quantum well active structures are determined by adjusting the thicknesses of the wells and the barriers and the AlGaInAs components; for [ Al (x) Ga]In (y) As expression, the variation range of the well layer composition x is 0.1-0.7, and the variation range of y is 0.4-0.8; the whole m structures can cover the wavelength range of 1300-1600 nm; the m-1 InP tunneling junctions are composed of highly doped p+ InP/n+ InP, and the p+ and n+ doping concentrations are greater than 1×10 19 cm -3 。
Preferably, the thickness of the p-AlGaInAs graded waveguide layer is 0.1-0.3 μm, and the doping concentration is 1×10 17 cm -3 Up to 2X 10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The material is AlGaInAs, the component is for [ Al (x) Ga]In (y) As expression, x varies from 0.7 to 0.9 and y is 0.53.
Preferably, the thickness of the P-InGaAsP corrosion stop layer is 0.02 μm, and the P type doping concentration is 1×10 18 cm -3 Up to 2X 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The material is InGaAsP, the composition for GaIn (x) As (y) P expression, x ranges from 0.8 to 0.9, y is 0.33.
Preferably, the p-InP confinement layer has a thickness of 1.0-1.6 μm and a p-type doping concentration of greater than 1×10 18 cm -3 。
Preferably, the thickness of the p-InGaAsP/InGaAs contact layer is 0.2-0.3 μm, and the p-type doping concentration is more than 5×10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The material InGaAsP comprises the components of GaIn (x) As (y) P expression form, wherein the x variation range is 0.7-0.8, y is 0.62, and the thickness is 50-70nm; the material InGaAs, composition for GaIn (x) As expression form, x is 0.53, thickness is 150-230nm.
Compared with the prior art, the application has the following beneficial effects: sequentially epitaxially growing a buffer layer, an n-InP limiting layer, an n-AlGaInAs graded waveguide layer, a multi-section tunneling MQW active layer, a p-AlGaInAs graded waveguide layer, a p-corrosion barrier layer, a p-InP limiting layer and a p-GaInAsP/InGaAs contact layer on an InP substrate; the multi-section tunneling MQW active layer is made of an AlGaInAs/InP system, ultra-wide gain spectrum is realized through the AlGaInAs/InP multi-section tunneling MQW active layer, and the structure can be used for a large-bandwidth adjustable laser, a wide-spectrum spontaneous emission light source, a phased array laser radar emission light source and the like; the device has the characteristics of compact structure, and can realize ultra-large bandwidth without multi-pipe splicing.
The foregoing description is only an overview of the present application, and is intended to provide a better understanding of the present application, as it is embodied in the following description, with reference to the preferred embodiments of the present application and the accompanying drawings. Specific embodiments of the present application are given in detail by the following examples and the accompanying drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural view of the present application.
Detailed Description
The principles and features of the present application are described below with reference to fig. 1, but the examples are provided for illustration only and are not intended to limit the scope of the application. The application is more particularly described by way of example in the following paragraphs with reference to the drawings. Advantages and features of the application will become more apparent from the following description and from the claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the application.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When a component is considered to be "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the present application provides a multi-segment quantum well InP-based epitaxial wafer structure with wide spectral gain, comprising an InP substrate 100, an InP buffer layer 101, an n-InP confinement layer 102, an n-AlGaInAs graded waveguide layer 103, a multi-segment tunneling MQW active layer 104, a p-AlGaInAs graded waveguide layer 105, a p-InGaAsP etch stop layer 106, a p-InP confinement layer 107, and a p-InGaAsP/InGaAs contact layer 108.
Furthermore, the epitaxial wafer structure adopts MOCVD equipment.
Further, MO sources used in the epitaxial wafer structure of the present application are TMGa, TMAl, and TMIn.
Further, the doping sources used in the epitaxial wafer structure are SiH4, CF4 and the like.
Further, the specific gases used in the epitaxial wafer structure of the application are AsH3 and PH3.
Further, an InP buffer layer 101 is grown on the InP substrate 100 at 700℃to a thickness of 0.3 μm to 0.6 μm with a doping concentration of 1X 10 18 cm -3 Up to 3X 10 18 cm -3 。
Further, an n-InP confinement layer 102 is grown on the n-InP buffer layer 101 at 700 ℃ to a thickness of 0.5 μm to 1.0 μm, doped n-type, doped at a concentration of 1×10 18 cm -3 Up to 1.5X10 18 cm -3 。
Further, an n-AlGaInAs graded waveguide layer 103 is grown on the n-InP confinement layer 102 at 710 ℃ to a thickness of 0.2-0.25 μm with a doping concentration of 1×10 17 cm -3 Up to 2X 10 17 cm -3 . Wherein the AlGaInAs elements are required to be lattice matched with InP and have a wavelength of 1.2 microns. For [ Al (x) Ga]In (y) As expression, x varies from 0.7 to 0.9 and y is 0.53.
Further, a multi-section tunneling MQW active layer 104 is grown on the n-AlGaInAs graded waveguide layer 103 at 700 ℃, and the multi-section tunneling MQW active layer is formed by mutually arranging m multi-quantum well active structures and m-1 InP tunneling junctions at intervals, wherein the m value is smaller than 6. The overall thickness is 0.1 μm-0.5 μm, without intentional doping. The m multiple quantum wells have active structures, the well thickness is 4-6nm, the material is AlGaInAs, the barrier thickness is 5-10nm, and the material is AlGaInAs. The number of the quantum wells is 1-10, and a strain high-limit band-order structure is adopted. m multiple quantum well active structures, each of which emits light at a different wavelength, each set of multiple quantum wells having a design bandwidth of about 60nm. The coverage wavelength range was 60X m nanometers. The different luminescence center wavelengths of each group of multi-quantum well active structures are determined by adjusting the thicknesses of the wells and barriers and the AlGaInAs composition. For [ Al (x) Ga]In (y) As expression, the well layer composition x ranges from 0.1 to 0.7 and y ranges from 0.4 to 0.8. The whole m structures can cover the wavelength range of 1300-1600 nm. The m-1 InP tunneling junctions are composed of highly doped p+ InP/n+ InP, and the p+ and n+ doping concentrations are greater than 1×10 19 cm -3 。
Further, a p-AlGaInAs graded waveguide layer (105) grown at 710 ℃ on the multi-segment tunneling MQW active layer 104 has a thickness of 0.1-0.3 μm and a doping concentration of 1×10 17 cm -3 Up to 2X 10 17 cm -3 . The material is AlGaInAs, component for [ Al (x) Ga]In (y) As expression, x varies from 0.7 to 0.9 and y is 0.53.
Further, a P-InGaAsP etch stop layer 106 was grown on the P-AlGaInAs graded waveguide layer 105 at 710℃to a thickness of 0.02 μm with a P-type doping concentration of 1X 10 18 cm -3 Up to 2X 10 18 cm -3 . The material is InGaAsP, the composition for GaIn (x) As (y) P expression, x ranges from 0.8 to 0.9, y is 0.33.
Further, a p-InP confinement layer 107 is grown on the p-InGaAsP etch stop layer 106 to a thickness of 1.0-1.6 μm at 700 ℃ with a p-type doping concentration greater than 1×10 18 cm -3 。
Further, the p-InGaAsP/InGaAs contact layer 108 is grown on the p-InP confinement layer 107 at 710 ℃ to a thickness of 0.2-0.3 μm, with a p-type doping concentration greater than 5×10 18 cm -3 . The material InGaAsP has a composition in the range of 0.7-0.8 x, 0.62 y and 50-70nm thickness for GaIn (x) As (y) P expression. The material InGaAs, composition for GaIn (x) As expression form, x is 0.53, thickness is 150-230nm.
The above description is only of the preferred embodiments of the present application, and is not intended to limit the present application in any way; those skilled in the art will readily appreciate that the present application may be implemented as shown in the drawings and described above; however, those skilled in the art will appreciate that many modifications, adaptations, and variations of the present application are possible in light of the above teachings without departing from the scope of the application; meanwhile, any equivalent changes, modifications and evolution of the above embodiments according to the essential technology of the present application still fall within the scope of the present application.
Claims (10)
1. A multi-section quantum well InP-based epitaxial wafer with wide spectral gain is characterized in that: the InP semiconductor device comprises an InP substrate (100), and an InP buffer layer (101), an n-InP limiting layer (102), an n-AlGaInAs graded waveguide layer (103), a multi-section tunneling MQW active layer (104), a p-AlGaInAs graded waveguide layer (105), a p-InGaAsP corrosion stop layer (106), a p-InP limiting layer (107) and a p-InGaAsP/InGaAs contact layer (108) are sequentially epitaxially grown on the InP substrate (100).
2. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the InP substrate (100) is an n-type substrate containing S element, and has a doping concentration of 8×10 17 cm -3 Up to 1.2X10 18 cm -3 The crystal orientation is<100>Or have an offset angle of less than 5 degrees.
3. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the InP buffer layer (101) has a thickness of 0.3 μm-0.6 μm and a doping concentration of 1×10 18 cm -3 Up to 3X 10 18 cm -3 。
4. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the n-InP confinement layer (102) has a thickness of 0.5 μm to 1.0 μm, is doped n-type, and has a doping concentration of 1×10 18 cm -3 Up to 1.5X10 18 cm -3 。
5. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the n-AlGaInAs graded waveguide layer (103) has a thickness of 0.2-0.25 μm and a doping concentration of 1×10 17 cm -3 Up to 2X 10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein, each element component of AlGaInAs is required to meet the requirement of lattice matching with InP, and the wavelength is 1.2 microns; for [ Al (x) Ga]In (y) As expression, x varies from 0.7 to 0.9 and y is 0.53.
6. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the multi-section tunneling MQW active layer (104) is formed by mutually arranging m multi-quantum well active structures and m-1 InP tunneling junctions at intervals, and the m value is smaller than 6; the whole thickness is 0.1-0.5 μm, and no intentional doping is performed; m multiple quantum well active structures, well thicknessThe degree is 4-6nm, the material is AlGaInAs, the barrier thickness is 5-10nm, and the material is AlGaInAs; the number of the quantum wells is 1-10, and a strain high-limit band-order structure is adopted; m multiple quantum well active structures, each of which has different light emission wavelength, each group of multiple quantum wells having a design bandwidth of about 60nm; the coverage wavelength range is 60X m nanometers; the different luminous center wavelengths of each group of multi-quantum well active structures are determined by adjusting the thicknesses of the wells and the barriers and the AlGaInAs components; for [ Al (x) Ga]In (y) As expression, the variation range of the well layer composition x is 0.1-0.7, and the variation range of y is 0.4-0.8; the whole m structures can cover the wavelength range of 1300-1600 nm; the m-1 InP tunneling junctions are composed of highly doped p+ InP/n+ InP, and the p+ and n+ doping concentrations are greater than 1×10 19 cm -3 。
7. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the thickness of the p-AlGaInAs graded waveguide layer (105) is 0.1-0.3 μm, and the doping concentration is 1×10 17 cm -3 Up to 2X 10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The material is AlGaInAs, the component is for [ Al (x) Ga]In (y) As expression, x varies from 0.7 to 0.9 and y is 0.53.
8. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the thickness of the P-InGaAsP etch stop layer (106) is 0.02 μm, and the P-type doping concentration is 1×10 18 cm -3 Up to 2X 10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The material is InGaAsP, the composition for GaIn (x) As (y) P expression, x ranges from 0.8 to 0.9, y is 0.33.
9. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the p-InP confinement layer (107) has a thickness of 1.0-1.6 μm and a p-type doping concentration of greater than 1×10 18 cm -3 。
10. The multi-segment quantum well InP-based epitaxial wafer with wide spectral gain according to claim 1, wherein: the saidThe p-InGaAsP/InGaAs contact layer (108) has a thickness of 0.2-0.3 μm and a p-type doping concentration of greater than 5×10 18 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The material InGaAsP comprises the components of GaIn (x) As (y) P expression form, wherein the x variation range is 0.7-0.8, y is 0.62, and the thickness is 50-70nm; the material InGaAs, composition for GaIn (x) As expression form, x is 0.53, thickness is 150-230nm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588717A (en) * | 2004-07-16 | 2005-03-02 | 北京工业大学 | High efficiency high power multiple wave length tunnel cascade multiple active area vertical chamber surface transmitting laser |
| CN102403651A (en) * | 2011-11-15 | 2012-04-04 | 南京大学 | Multi-wavelength distribution feedback type semiconductor laser device and manufacturing method thereof |
| CN116157972A (en) * | 2020-06-02 | 2023-05-23 | 赛米尼克斯有限公司 | AlInGaAs/InGaAsP/InP edge-emitting semiconductor laser including multiple monolithic laser diodes |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588717A (en) * | 2004-07-16 | 2005-03-02 | 北京工业大学 | High efficiency high power multiple wave length tunnel cascade multiple active area vertical chamber surface transmitting laser |
| CN102403651A (en) * | 2011-11-15 | 2012-04-04 | 南京大学 | Multi-wavelength distribution feedback type semiconductor laser device and manufacturing method thereof |
| CN116157972A (en) * | 2020-06-02 | 2023-05-23 | 赛米尼克斯有限公司 | AlInGaAs/InGaAsP/InP edge-emitting semiconductor laser including multiple monolithic laser diodes |
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Application publication date: 20231013 |