CN116884978A - Array substrate, display panel and display device - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 5
- 230000003028 elevating effect Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 40
- 150000004706 metal oxides Chemical class 0.000 abstract description 40
- 239000010410 layer Substances 0.000 description 86
- 238000000034 method Methods 0.000 description 33
- 238000010586 diagram Methods 0.000 description 23
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
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- 238000005530 etching Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
- H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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Abstract
Description
技术领域Technical field
本发明涉及显示技术领域,尤其涉及一种阵列基板、显示面板及显示装置。The present invention relates to the field of display technology, and in particular, to an array substrate, a display panel and a display device.
背景技术Background technique
随着显示技术的发展对显示质量的要求越来越高,薄膜晶体管液晶显示器以其高清晰度、真彩视频显示、外观轻薄、耗电量少以及无辐射污染等优点而成为显示器件发展的主流趋势。With the development of display technology, the requirements for display quality are getting higher and higher. Thin film transistor liquid crystal displays have become the first choice in the development of display devices due to their advantages such as high definition, true color video display, thin and light appearance, low power consumption and no radiation pollution. Mainstream trends.
薄膜晶体管液晶显示器的阵列基板的制作技术的核心是光刻工艺。光刻工艺既是决定产品品质的重要环节,也是影响产品成本的关键部分,减少光刻工艺,可以极大地降低生产成本。目前,为减少光刻工艺,在一些阵列基板的制备过程中,会在走线之上制备一层无机绝缘层。该无机绝缘层通常采用化学气相淀积工艺沉积形成,但是化学气相淀积工艺会氧化走线,产生金属氧化物,使得邻近的走线发生短接,导致显示不良。The core of the manufacturing technology of the array substrate of the thin film transistor liquid crystal display is the photolithography process. The photolithography process is not only an important link in determining product quality, but also a key part that affects product costs. Reducing the photolithography process can greatly reduce production costs. Currently, in order to reduce the photolithography process, an inorganic insulating layer is prepared on the wiring during the preparation process of some array substrates. The inorganic insulating layer is usually deposited using a chemical vapor deposition process, but the chemical vapor deposition process will oxidize the wiring and produce metal oxide, causing adjacent wiring to short-circuit, resulting in poor display.
发明内容Contents of the invention
本发明提供了一种阵列基板、显示面板及显示装置,以避免相邻走线因化学气相淀积工艺而短接,提升显示质量。The invention provides an array substrate, a display panel and a display device to prevent adjacent lines from being short-circuited due to the chemical vapor deposition process and improve display quality.
第一方面,本发明实施例提供了一种阵列基板,包括:In a first aspect, an embodiment of the present invention provides an array substrate, including:
衬底基板和位于所述衬底基板一侧的第一绝缘层;a base substrate and a first insulating layer located on one side of the base substrate;
第一走线和第二走线,均位于所述第一绝缘层的远离所述衬底基板一侧的第一表面,多条所述第一走线沿第一方向延伸且沿第二方向排列,多条所述第二走线沿所述第一方向延伸且沿所述第二方向排列,所述第一方向与所述第二方向相交;The first traces and the second traces are both located on the first surface of the first insulating layer away from the base substrate. A plurality of the first traces extend along the first direction and extend along the second direction. arranged, the plurality of second traces extend along the first direction and are arranged along the second direction, and the first direction intersects with the second direction;
第二绝缘层,覆盖于所述第一绝缘层的所述第一表面、所述第一走线的表面以及所述第二走线的表面,所述第二绝缘层为无机层;A second insulating layer covers the first surface of the first insulating layer, the surface of the first wiring, and the surface of the second wiring, where the second insulating layer is an inorganic layer;
其中,所述第一走线包括第一走线段,所述第二走线包括第二走线段,在所述第二方向上,所述第一走线段与所述第二走线段重叠,所述第一走线段与所述第二走线段之间的间距小于或等于短接距离阈值,所述第一绝缘层的所述第一表面包括至少一段坡面,所述坡面沿所述第一方向延伸,且位于所述第一走线段和所述第二走线段之间。Wherein, the first trace includes a first trace segment, the second trace includes a second trace segment, and in the second direction, the first trace segment overlaps the second trace segment, so The distance between the first trace segment and the second trace segment is less than or equal to the short circuit distance threshold, and the first surface of the first insulating layer includes at least a slope, and the slope is along the first slope. Extends in one direction and is located between the first wiring segment and the second wiring segment.
第二方面,本发明实施例还提供了一种显示面板,包括上述第一方面所述的阵列基板。In a second aspect, embodiments of the present invention further provide a display panel, including the array substrate described in the first aspect.
第三方面,本发明实施例还提供了一种显示装置,包括上述第二方面所述的显示面板。In a third aspect, an embodiment of the present invention further provides a display device, including the display panel described in the second aspect.
本发明实施例提供的技术方案与现有技术相比具有如下优点:Compared with the existing technology, the technical solution provided by the embodiment of the present invention has the following advantages:
本发明实施例提供的技术方案,针对同方向延伸的第一走线和第二走线,通过在第一走线的第一走线段与第二走线的第二走线段之间设置至少一段坡面,且第一走线段与第二走线段之间的间距小于或等于短接距离阈值,坡面与第一走线或第二走线的延伸方向相同,即坡面朝向第一走线段或第二走线段设置。由此,第一走线段和第二走线段因化学气相淀积工艺产生的金属氧化物会被第一走线段与第二走线段之间的坡面阻断,从而避免第一走线段与第二走线段通过金属氧化物短接,即避免第一走线与第二走线被金属氧化物短接,进而使得显示数据的传输不受影响,提升显示质量。The technical solution provided by the embodiment of the present invention is to provide at least one section between the first trace section of the first trace and the second trace section of the second trace for the first trace and the second trace extending in the same direction. Slope, and the distance between the first trace segment and the second trace segment is less than or equal to the short distance threshold, the slope is the same as the extension direction of the first trace or the second trace, that is, the slope faces the first trace segment Or the second trace segment setting. Therefore, the metal oxide produced by the chemical vapor deposition process between the first trace segment and the second trace segment will be blocked by the slope between the first trace segment and the second trace segment, thereby preventing the first trace segment from being connected to the second trace segment. The two wire segments are short-circuited through metal oxide, which prevents the first wire and the second wire from being short-circuited by metal oxide, thereby preventing the transmission of display data from being affected and improving display quality.
附图说明Description of the drawings
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本发明的实施例,并与说明书一起用于解释本发明的原理。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description serve to explain the principles of the invention.
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,对于本领域普通技术人员而言,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those of ordinary skill in the art, It is said that other drawings can be obtained based on these drawings without exerting creative labor.
图1为相关技术提供的一种阵列基板的结构示意图;Figure 1 is a schematic structural diagram of an array substrate provided by related technologies;
图2为图1所示阵列基板的数据走线与触控走线发生短接的示意图;Figure 2 is a schematic diagram of a short circuit between the data traces and the touch traces of the array substrate shown in Figure 1;
图3为本发明实施例提供的一种阵列基板的结构示意图;Figure 3 is a schematic structural diagram of an array substrate provided by an embodiment of the present invention;
图4为本发明实施例提供的第一走线和第二走线的排布示意图;Figure 4 is a schematic diagram of the arrangement of the first wiring and the second wiring provided by the embodiment of the present invention;
图5为本发明实施例提供的另一种阵列基板的结构示意图;Figure 5 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图6为本发明实施例提供的另一种阵列基板的结构示意图;Figure 6 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图7为本发明实施例提供的另一种阵列基板的结构示意图;Figure 7 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图8为图7所示阵列基板中的第一走线、第二走线与垫高结构的分布示意图;Figure 8 is a schematic diagram of the distribution of the first wiring, the second wiring and the pad structure in the array substrate shown in Figure 7;
图9为本发明实施例提供的另一种阵列基板的结构示意图;Figure 9 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图10为图9所示阵列基板中的第一走线、第二走线与垫高结构的分布示意图;Figure 10 is a schematic diagram of the distribution of the first wiring, the second wiring and the pad structure in the array substrate shown in Figure 9;
图11为本发明实施例提供的另一种阵列基板的结构示意图;Figure 11 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图12为图11所示阵列基板中的第一走线、第二走线与垫高结构的分布示意图;Figure 12 is a schematic diagram of the distribution of the first wiring, the second wiring and the pad structure in the array substrate shown in Figure 11;
图13为本发明实施例提供的另一种阵列基板的结构示意图;Figure 13 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图14为本发明实施例提供的另一种阵列基板的结构示意图;Figure 14 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图15为图14所示阵列基板中的第一走线、第二走线与垫高结构的分布示意图;Figure 15 is a schematic diagram of the distribution of the first wiring, the second wiring and the pad structure in the array substrate shown in Figure 14;
图16为本发明实施例提供的另一种阵列基板的结构示意图;Figure 16 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图17为本发明实施例提供的另一种阵列基板的结构示意图;Figure 17 is a schematic structural diagram of another array substrate provided by an embodiment of the present invention;
图18为本发明实施例提供的一种显示装置的结构示意图。Figure 18 is a schematic structural diagram of a display device provided by an embodiment of the present invention.
具体实施方式Detailed ways
为了能够更清楚地理解本发明的上述目的、特征和优点,下面将对本发明的方案进行进一步描述。需要说明的是,在不冲突的情况下,本发明的实施例及实施例中的特征可以相互组合。In order to understand the above objects, features and advantages of the present invention more clearly, the solution of the present invention will be further described below. It should be noted that, as long as there is no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.
图1示出了相关技术中的一种采用7道光刻(7mask)工艺制备的阵列基板的结构示意图,图2示出了数据走线与触控走线发生短接时的结构示意图。参考图1和图2,该相关技术对8mask工艺进行改进,在制备阵列基板时,采用无机层1替换8mask工艺时的覆盖于源漏金属层(包括源极S、漏极D、数据走线2和触控走线3等其他同层走线)表面的平坦化层。但是,该无机层1采用化学气相淀积工艺沉积而成,而化学气相淀积工艺会氧化制备走线的金属(例如钛),产生金属氧化物4;并且,为了提高像素开口率,数据走线2和触控走线3均设置于相邻两个像素之间,由此,会使得每条触控走线3必然与一条数据走线2的间距很小,同时,数据走线2和触控走线3之间的区域较为平坦,此时,数据走线2和触控走线3因化学气相淀积工艺形成的金属氧化物4很容易将数据走线2和触控走线3短接(这种情况会导致数据走线2和触控走线3微短路,在点亮测试时,灰画面会出现发紫的现象),造成显示不良。FIG. 1 shows a schematic structural diagram of an array substrate prepared using a 7-channel photolithography (7mask) process in the related art. FIG. 2 shows a schematic structural diagram of a data trace and a touch trace when a short circuit occurs. Referring to Figures 1 and 2, this related technology improves the 8mask process. When preparing the array substrate, the inorganic layer 1 is used to replace the source and drain metal layers (including source S, drain D, and data traces) used in the 8mask process. 2 and touch traces 3 and other traces on the same layer). The planarization layer on the surface. However, the inorganic layer 1 is deposited using a chemical vapor deposition process, and the chemical vapor deposition process will oxidize the metal used to prepare the wiring (such as titanium) to produce metal oxide 4; and, in order to increase the pixel aperture ratio, the data path is Line 2 and touch trace 3 are both arranged between two adjacent pixels. Therefore, each touch trace 3 must have a very small distance from a data trace 2. At the same time, data trace 2 and The area between the touch traces 3 is relatively flat. At this time, the metal oxide 4 formed by the chemical vapor deposition process between the data traces 2 and the touch traces 3 can easily separate the data traces 2 and the touch traces 3. Short circuit (this situation will cause the data trace 2 and the touch trace 3 to be slightly short-circuited, and the gray screen will appear purple during the lighting test), resulting in poor display.
基于上述技术问题,发明人提出本发明实施例的技术方案。具体地,本发明实施例提供了一种阵列基板,包括:衬底基板和位于衬底基板一侧的第一绝缘层;第一走线和第二走线,均位于第一绝缘层的远离衬底基板一侧的第一表面,多条第一走线沿第一方向延伸且沿第二方向排列,多条第二走线沿第一方向延伸且沿第二方向排列,第一方向与第二方向相交;第二绝缘层,覆盖于第一绝缘层的第一表面、第一走线的表面以及第二走线的表面,第二绝缘层为无机层;其中,第一走线包括第一走线段,第二走线包括第二走线段,在第二方向上,第一走线段与第二走线段重叠,第一走线段与第二走线段之间的间距小于或等于短接距离阈值,第一绝缘层的第一表面包括至少一段坡面,坡面沿第一方向延伸,且位于第一走线段和第二走线段之间。Based on the above technical problems, the inventor proposes a technical solution according to the embodiment of the present invention. Specifically, embodiments of the present invention provide an array substrate, including: a base substrate and a first insulating layer located on one side of the base substrate; first wiring and second wiring, both located far away from the first insulating layer. On the first surface of one side of the base substrate, a plurality of first traces extend along the first direction and are arranged along the second direction, and a plurality of second traces extend along the first direction and are arranged along the second direction, and the first direction and The second direction intersects; the second insulating layer covers the first surface of the first insulating layer, the surface of the first trace and the surface of the second trace, and the second insulating layer is an inorganic layer; wherein the first trace includes The first trace segment, the second trace segment includes the second trace segment, in the second direction, the first trace segment overlaps the second trace segment, and the spacing between the first trace segment and the second trace segment is less than or equal to the short circuit Distance threshold: the first surface of the first insulation layer includes at least a slope extending along the first direction and located between the first wiring segment and the second wiring segment.
通过上述技术方案,能够将第一走线和第二走线之间的区域(即第一绝缘层的第一表面)由平坦变为不平坦,有效阻断了第一走线和第二走线之间的金属氧化物的连续性,使得该部分金属氧化物出现断裂,避免了第一走线和第二走线短接。Through the above technical solution, the area between the first trace and the second trace (ie, the first surface of the first insulation layer) can be changed from flat to uneven, effectively blocking the first trace and the second trace. The continuity of the metal oxide between the lines causes this part of the metal oxide to break, preventing the first trace and the second trace from being short-circuited.
需要说明的是,相关技术仅提供了数据走线和触控走线短接的示例,本发明实施例涉及的第一走线和第二走线并不局限于数据走线和触控走线,第一走线和第二走线可以是任意两条能够被因制备无机层时采用的化学气象沉积工艺而产生的金属氧化物所短接的走线。It should be noted that the related art only provides examples of short-circuiting data traces and touch traces. The first traces and second traces involved in the embodiment of the present invention are not limited to data traces and touch traces. , the first trace and the second trace may be any two traces that can be short-circuited by the metal oxide produced by the chemical vapor deposition process used in preparing the inorganic layer.
以上是本发明的核心思想,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下,所获得的所有其他实施例,都属于本发明保护的范围。The above is the core idea of the present invention. The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.
图3为本发明实施例提供的一种阵列基板的结构示意图;图4为本发明实施例提供的第一走线和第二走线的排布示意图。如图3和图4所示,该阵列基板包括:衬底基板10和位于衬底基板10一侧的第一绝缘层20;第一走线30和第二走线40,均位于第一绝缘层20的远离衬底基板10一侧的第一表面,多条第一走线30沿第一方向X延伸且沿第二方向Y排列,多条第二走线40沿第一方向X延伸且沿第二方向Y排列,第一方向X与第二方向Y相交;第二绝缘层50,覆盖于第一绝缘层20的第一表面、第一走线30的表面以及第二走线40的表面,第二绝缘层50为无机层;其中,第一走线30包括第一走线段31,第二走线40包括第二走线段41,在第二方向Y上,第一走线段31与第二走线段41重叠,第一走线段31与第二走线段41之间的间距小于或等于短接距离阈值,第一绝缘层20的第一表面包括至少一段坡面21,坡面21沿第一方向X延伸,且位于第一走线段31和第二走线段41之间。FIG. 3 is a schematic structural diagram of an array substrate provided by an embodiment of the present invention; FIG. 4 is a schematic diagram of the arrangement of first wiring and second wiring provided by an embodiment of the present invention. As shown in Figures 3 and 4, the array substrate includes: a base substrate 10 and a first insulating layer 20 located on one side of the base substrate 10; first wiring 30 and second wiring 40, both located on the first insulation layer. On the first surface of the layer 20 on the side away from the base substrate 10, a plurality of first traces 30 extend along the first direction X and are arranged along the second direction Y, and a plurality of second traces 40 extend along the first direction X and Arranged along the second direction Y, the first direction surface, the second insulating layer 50 is an inorganic layer; wherein, the first wiring 30 includes a first wiring segment 31, and the second wiring 40 includes a second wiring segment 41. In the second direction Y, the first wiring segment 31 and The second trace segments 41 overlap, the distance between the first trace segment 31 and the second trace segment 41 is less than or equal to the short circuit distance threshold, and the first surface of the first insulating layer 20 includes at least a slope 21 along which the slope 21 extends. The first direction X extends and is located between the first wiring segment 31 and the second wiring segment 41 .
上述阵列基板中,第一绝缘层20可以是层间绝缘层,包括但不限于是栅极金属层与源漏金属层之间的层间绝缘层。第二绝缘层50为无机层,即第二绝缘层50采用无机材料制备。本发明实施例中,第二绝缘层50采用化学气相淀积工艺沉积而成,如此,由于第一走线30和第二走线40会直接暴露在第二绝缘层50的制备环境中,因而第一走线30和第二走线40的部分金属会被化学气相淀积工艺氧化而形成金属氧化物,形成的金属氧化物向周边扩散,第一走线30的金属氧化物与第二走线40的金属氧化物容易在第一走线30与第二走线40之间的间距较小处电性连接,从而造成第一走线30与第二走线40短接。基于此,本发明实施例依据短接距离阈值对第一走线30与第二走线40划分存在短接风险的走线段,得到在第二方向Y上重叠的第一走线段31与第二走线段41。由此,通过在第一走线段31和第二走线段41之间形成沿第一方向X延伸的坡面21,如此,在坡面21处,针对一侧的金属氧化物爬坡的情况,该侧的金属氧化物无法“爬”上坡面21;针对另一侧金属氧化物下坡的情况,该侧的金属氧化物在坡面21上因受重力作用会发生断裂。因此,第一走线30的金属氧化物与第二走线40的金属氧化物在坡面21处无法实现电性连接,从而有效避免了第一走线30与第二走线40发生短接。可以理解的是,第一走线段31可以是第一走线30的部分或全部,对应于第一走线段,第二走线段41可以是第二走线40的部分或全部。另外,第一走线30可以包括一段或多段第一走线段31,相应的,第二走线40也可以包括一段或多段第二走线段41,具体视实际布线情况而定。In the above array substrate, the first insulating layer 20 may be an interlayer insulating layer, including but not limited to an interlayer insulating layer between a gate metal layer and a source and drain metal layer. The second insulating layer 50 is an inorganic layer, that is, the second insulating layer 50 is made of inorganic materials. In the embodiment of the present invention, the second insulating layer 50 is deposited using a chemical vapor deposition process. In this way, since the first traces 30 and the second traces 40 are directly exposed to the preparation environment of the second insulating layer 50, Part of the metal of the first trace 30 and the second trace 40 will be oxidized by the chemical vapor deposition process to form metal oxide. The formed metal oxide diffuses to the periphery. The metal oxide of the first trace 30 and the second trace The metal oxide of the wire 40 is easily electrically connected at a small distance between the first wire 30 and the second wire 40 , resulting in a short circuit between the first wire 30 and the second wire 40 . Based on this, the embodiment of the present invention divides the first trace 30 and the second trace 40 into trace segments with the risk of short circuit according to the short-circuit distance threshold, and obtains the first trace segment 31 and the second trace segment that overlap in the second direction Y. Route segment 41. Thus, by forming a slope 21 extending along the first direction The metal oxide on this side cannot "climb" up the slope 21; when the metal oxide on the other side goes down the slope, the metal oxide on this side will break due to the action of gravity on the slope 21. Therefore, the metal oxide of the first trace 30 and the metal oxide of the second trace 40 cannot be electrically connected at the slope 21 , thereby effectively avoiding a short circuit between the first trace 30 and the second trace 40 . It can be understood that the first trace segment 31 may be part or all of the first trace 30 , corresponding to the first trace segment, and the second trace segment 41 may be part or all of the second trace 40 . In addition, the first trace 30 may include one or more first trace segments 31, and accordingly, the second trace 40 may also include one or more second trace segments 41, depending on the actual wiring conditions.
其中,短接距离阈值可以是在制备第一绝缘层20时能够使第一走线段31与第二走线段41发生短接的最大间距,该短接距离阈值主要受工艺限制,具体可根据实际检测数据进行设置。可选的,短接距离阈值小于一个像素单元的长度和宽度。在一些实施方式中,短接距离阈值为20微米。此时,第一走线段31与第二走线段41之间的间距小于或等于20微米,第一走线段31与第二走线段41存在因化学气相淀积工艺形成的金属氧化物而短接的风险。因此,只要在间距小于或等于20微米走线段之间设置坡面21,即可有效避免对应的第一走线30与第二走线40发生短接。The short-circuit distance threshold may be the maximum distance at which the first wiring segment 31 and the second wiring segment 41 can be short-circuited when preparing the first insulating layer 20 . The short-circuit distance threshold is mainly limited by the process, and may be determined based on the actual situation. Detection data is set. Optionally, the short distance threshold is less than the length and width of one pixel unit. In some embodiments, the short distance threshold is 20 microns. At this time, the distance between the first wiring segment 31 and the second wiring segment 41 is less than or equal to 20 microns, and the first wiring segment 31 and the second wiring segment 41 are short-circuited due to metal oxide formed by the chemical vapor deposition process. risks of. Therefore, as long as the slope 21 is provided between the trace segments with a pitch of less than or equal to 20 microns, the short circuit between the corresponding first trace 30 and the second trace 40 can be effectively avoided.
另外,在一些实施方式中,坡面21可以由第一绝缘层20的制备形成。例如,可以通过对第一绝缘层20进行刻蚀,在第一走线段31与第二走线段41之间形成坡面21。坡面21可以是刻蚀形成的图3所示的台阶所具有的一侧斜坡,也可以是刻蚀形成的图5所示的凸起所具有的两侧斜坡,还可以是刻蚀形成的图6所示的凹槽所具有的两侧斜坡。此外,位于第一走线段31与第二走线段41之间的坡面21可以是一整段,也可以是沿第一方向X交错排布的多段。In addition, in some embodiments, the slope 21 may be formed by preparation of the first insulation layer 20 . For example, the first insulation layer 20 can be etched to form the slope 21 between the first wiring segment 31 and the second wiring segment 41 . The slope 21 may be a slope on one side of the step shown in Figure 3 formed by etching, or it may be a slope on both sides of the protrusion shown in Figure 5 formed by etching, or it may be formed by etching. The groove shown in Figure 6 has slopes on both sides. In addition, the slope 21 located between the first wiring segment 31 and the second wiring segment 41 may be a whole segment, or may be multiple segments staggered along the first direction X.
在另外一些实施方式中,衬底基板10与第一绝缘层20之间设置有垫高结构,坡面21可以是第一绝缘层20随垫高结构的形状而形成的。其中,垫高结构可以是单独制备的,也可以与已有膜层结构同层制备。垫高结构的相关说明可参考下文,此处不做具体描述。In other embodiments, a raised structure is provided between the base substrate 10 and the first insulating layer 20 , and the slope 21 may be formed by the first insulating layer 20 following the shape of the raised structure. Among them, the pad structure can be prepared separately, or it can be prepared on the same layer as the existing film layer structure. The relevant description of the raised structure can be found below, and will not be described in detail here.
需要说明的是,本发明实施例中的阵列基板的结构示意图仅示意性地示出了可实施的阵列基板的结构,本发明对其他未提及的膜层及膜层位置不作限制,具体视实际情况而定。It should be noted that the structural schematic diagram of the array substrate in the embodiment of the present invention only schematically shows the structure of the array substrate that can be implemented. The present invention does not place restrictions on other unmentioned film layers and film layer positions. Specifically, depending on the It depends on the actual situation.
本实施例提供的阵列基板,针对同方向延伸的第一走线和第二走线,通过在第一走线的第一走线段与第二走线的第二走线段之间设置至少一段坡面,且第一走线段与第二走线段之间的间距小于或等于短接距离阈值,坡面与第一走线或第二走线的延伸方向相同,即坡面朝向第一走线段或第二走线段设置。由此,第一走线段和第二走线段因化学气相淀积工艺产生的金属氧化物会被第一走线段与第二走线段之间的坡面阻断,从而避免第一走线段与第二走线段通过金属氧化物短接,即避免第一走线与第二走线被金属氧化物短接,进而使得显示数据的传输不受影响,提升显示质量。In the array substrate provided in this embodiment, for the first trace and the second trace extending in the same direction, at least one slope is provided between the first trace segment of the first trace and the second trace segment of the second trace. surface, and the distance between the first trace segment and the second trace segment is less than or equal to the short distance threshold, the slope is the same as the extension direction of the first trace or the second trace, that is, the slope faces the first trace segment or Second trace segment settings. Therefore, the metal oxide produced by the chemical vapor deposition process between the first trace segment and the second trace segment will be blocked by the slope between the first trace segment and the second trace segment, thereby preventing the first trace segment from being connected to the second trace segment. The two wire segments are short-circuited through metal oxide, which prevents the first wire and the second wire from being short-circuited by metal oxide, thereby preventing the transmission of display data from being affected and improving display quality.
基于上述技术方案,在一些实施方式中,在第二方向上,第一走线段与坡面的至少部分重叠。Based on the above technical solution, in some embodiments, in the second direction, the first trace segment overlaps at least part of the slope surface.
具体的,在第二方向上,第一走线段与坡面的一部分重叠,或者第一走线段与坡面完全重叠;相应的,由于在第二方向上,第一走线段与第二走线段重叠,因此,在第二方向上,第二走线段与坡面的一部分重叠,或者第二走线段与坡面完全重叠。由此,坡面能够完全阻断第一走线段上形成的金属氧化物与第二走线段上形成的金属氧化物的电性连接,从而避免第一走线与第二走线连接。Specifically, in the second direction, the first wiring segment overlaps part of the slope, or the first wiring segment completely overlaps the slope; correspondingly, because in the second direction, the first wiring segment and the second wiring segment overlap Overlap, therefore, in the second direction, the second trace segment overlaps a part of the slope surface, or the second trace segment completely overlaps the slope surface. Therefore, the slope can completely block the electrical connection between the metal oxide formed on the first wiring segment and the metal oxide formed on the second wiring segment, thereby preventing the first wiring and the second wiring from being connected.
由于短接距离阈值小于一个像素单元的长度和宽度,因此间隔像素单元设置的两条走线不会因为化学气相淀积工艺形成的金属氧化物而短接;而在相邻两个像素单元之间需要布设两条走线时,由于像素单元之间的间隙很小,且为了增大开口率,两条走线需要布设得很近,两条走线存在间距小于或等于短接距离阈值的走线段,从而两条走线在化学气相淀积工艺的影响下容易发生短接。因此只需考虑相邻两个像素单元之间的两条走线存在短接的问题。基于此,在一些实施方式中,阵列基板包括多个像素单元,沿第二方向,第一走线和第二走线位于相邻的像素单元之间。由于第一走线和第二走线位于相邻的像素单元之间,基于上述分析,第一走线上必然存在第一走线段,第二走线上必然存在第二走线段,且第一走线段与第二走线段之间的间距小于或等于短接距离阈值。如此,只需在相邻的像素单元之间第一走线与第二走线之间设置坡面,即可解决由于化学气相淀积工艺而导致相邻两条走线短接的问题,无需考虑其他相邻走线的防短接设计,结构设计较为简单。Since the short-circuit distance threshold is less than the length and width of a pixel unit, the two traces arranged between the pixel units will not be short-circuited due to the metal oxide formed by the chemical vapor deposition process; instead, between two adjacent pixel units When two traces need to be laid between pixel units, because the gap between pixel units is very small, and in order to increase the aperture ratio, the two traces need to be laid very close, and the distance between the two traces is less than or equal to the short distance threshold. Trace segments, so the two traces are prone to short circuits under the influence of the chemical vapor deposition process. Therefore, we only need to consider the problem of short circuit between two adjacent pixel units. Based on this, in some embodiments, the array substrate includes a plurality of pixel units, and the first wiring line and the second wiring line are located between adjacent pixel units along the second direction. Since the first trace and the second trace are located between adjacent pixel units, based on the above analysis, there must be a first trace segment on the first trace, a second trace segment must exist on the second trace, and the first trace segment must exist on the second trace. The distance between the trace segment and the second trace segment is less than or equal to the short distance threshold. In this way, only a slope is provided between the first trace and the second trace between adjacent pixel units, which can solve the problem of short circuiting of two adjacent traces due to the chemical vapor deposition process, without the need for Considering the anti-short circuit design of other adjacent traces, the structural design is relatively simple.
前文提到了通过设置垫高结构来形成上述坡面,从而防止第一走线与第二走线发生短接。对此,本发明实施例对垫高结构的设计做详细描述。As mentioned above, the above-mentioned slope is formed by setting up a raising structure to prevent the first trace and the second trace from being short-circuited. In this regard, embodiments of the present invention describe in detail the design of the elevated structure.
本发明实施例中,阵列基板还包括位于衬底基板和第一绝缘层之间的至少一段垫高结构,垫高结构沿第一方向延伸,使得第一绝缘层的第一表面形成坡面。通过在衬底基板和第一绝缘层之间设置至少一段垫高结构,可以在不改变垫高结构之上的膜层的制备工艺的情况下,在第一绝缘层的第一表面形成至少一段坡面。In this embodiment of the present invention, the array substrate further includes at least a section of a raised structure located between the base substrate and the first insulating layer. The raised structure extends along the first direction so that the first surface of the first insulating layer forms a slope. By arranging at least one section of the raised structure between the base substrate and the first insulating layer, at least one section can be formed on the first surface of the first insulating layer without changing the preparation process of the film layer above the raised structure. Slope.
具体的,在一些实施方式中,如图7和图8所示,垫高结构60在衬底基板10所在平面上的垂直投影位于相邻的第一走线30和第二走线40在衬底基板10所在平面上的垂直投影之间。如此,结合本发明技术方案可知,在第一绝缘层20位于第一走线段与第二走线段之间的第一表面上会形成沿第一方向延伸的凸起,而凸起的两侧斜坡即为坡面21。因此,该实施方式能够形成两面坡面21,使得第一走线段的金属氧化物和第二走线段的金属氧化物在坡面21处均需要爬坡,从而有效阻挡了两条走线段的金属氧化物向对方扩散,进而防止第一走线与第二走线短接。Specifically, in some embodiments, as shown in FIGS. 7 and 8 , the vertical projection of the raising structure 60 on the plane of the substrate 10 is located between the adjacent first traces 30 and the second traces 40 on the substrate. between the vertical projections on the plane where the base substrate 10 is located. In this way, combined with the technical solution of the present invention, it can be seen that a protrusion extending in the first direction will be formed on the first surface of the first insulating layer 20 between the first wiring segment and the second wiring segment, and the slopes on both sides of the protrusion That is slope 21. Therefore, this embodiment can form two slopes 21, so that the metal oxide of the first trace segment and the metal oxide of the second trace segment both need to climb the slope 21, thereby effectively blocking the metal oxide of the two trace segments. The oxides diffuse toward each other, thereby preventing the first trace and the second trace from being shorted.
在一些实施方式中,如图9和图10所示,垫高结构60在衬底基板10所在平面上的垂直投影与第一走线30在衬底基板10所在平面上的垂直投影相交叠。如此,结合本发明技术方案可知,在第一绝缘层20位于第一走线段与第二走线段之间的第一表面上会形成沿第一方向延伸的台阶,而台阶的斜面即为坡面21。因此,该实施方式能够形成面向第二走线40的坡面,使得第一走线段的金属氧化物在坡面21处需要下坡,从而使得第一走线段的金属氧化物在坡面21处断裂,而第二走线段的金属氧化物在坡面21处需要爬坡,从而有效阻挡了两条走线段的金属氧化物向对方扩散,进而防止第一走线与第二走线短接。In some embodiments, as shown in FIGS. 9 and 10 , the vertical projection of the raising structure 60 on the plane of the base substrate 10 overlaps with the vertical projection of the first trace 30 on the plane of the base substrate 10 . In this way, combined with the technical solution of the present invention, it can be seen that a step extending along the first direction will be formed on the first surface of the first insulating layer 20 between the first wiring section and the second wiring section, and the slope of the step is the slope. twenty one. Therefore, this embodiment can form a slope facing the second trace 40 , so that the metal oxide of the first trace segment needs to go downhill at the slope 21 , so that the metal oxide of the first trace segment needs to go downhill at the slope 21 . break, and the metal oxide of the second trace segment needs to climb up the slope 21, thereby effectively blocking the metal oxide of the two trace segments from diffusing toward each other, thereby preventing the first trace and the second trace from being short-circuited.
另外,在一些实施方式中,如图11和图12所示,垫高结构60在衬底基板10所在平面上的垂直投影与第二走线40在衬底基板10所在平面上的垂直投影相交叠。如此,结合本发明技术方案可知,在第一绝缘层20位于第一走线段与第二走线段之间的第一表面上会形成沿第一方向延伸的台阶,而台阶的斜面即为坡面21。因此,该实施方式能够形成面向第一走线30的坡面,使得第一走线段的金属氧化物在坡面21处需要爬坡,而第二走线段的金属氧化物在坡面21处需要下坡,从而使得第二走线段的金属氧化物在坡面21处断裂,有效阻挡了两条走线段的金属氧化物向对方扩散,进而防止第一走线与第二走线短接。In addition, in some embodiments, as shown in FIGS. 11 and 12 , the vertical projection of the raising structure 60 on the plane of the base substrate 10 intersects with the vertical projection of the second trace 40 on the plane of the base substrate 10 Stack. In this way, combined with the technical solution of the present invention, it can be seen that a step extending along the first direction will be formed on the first surface of the first insulating layer 20 between the first wiring section and the second wiring section, and the slope of the step is the slope. twenty one. Therefore, this embodiment can form a slope facing the first trace 30 , so that the metal oxide of the first trace segment needs to climb the slope 21 , while the metal oxide of the second trace segment needs to climb the slope 21 . downhill, causing the metal oxide of the second trace segment to break at the slope 21, effectively blocking the metal oxides of the two trace segments from diffusing toward each other, thereby preventing the first trace and the second trace from being short-circuited.
在一些实施例方式中,第二走线为触控走线,垫高结构为导体,第二走线通过至少一个通孔与垫高结构电连接。参考图13,当第二走线40为触控走线且垫高结构60为导体时,在利用垫高结构60形成坡面21的同时,将第二走线40通过通孔与垫高结构60电连接,能够降低触控走线的阻抗,从而能够降低触控信号在触控走线上的电压降,降低功耗,提升触控信号的传输精度。In some embodiments, the second trace is a touch trace, the pad structure is a conductor, and the second trace is electrically connected to the pad structure through at least one through hole. Referring to Figure 13, when the second trace 40 is a touch trace and the pad structure 60 is a conductor, while the pad structure 60 is used to form the slope 21, the second trace 40 is passed through the through hole and the pad structure. The 60 electrical connection can reduce the impedance of the touch trace, thereby reducing the voltage drop of the touch signal on the touch trace, reducing power consumption and improving the transmission accuracy of the touch signal.
基于上述实施方式,在其他实施方式中,如图14和图15所示,垫高结构包括第一垫高结构61和第二垫高结构62;第一垫高结构61在衬底基板10所在平面上的垂直投影与第一走线30在衬底基板10所在平面上的垂直投影相交叠;第二垫高结构62在衬底基板10所在平面上的垂直投影与第二走线40在衬底基板10所在平面上的垂直投影相交叠。如此,结合本发明技术方案可知,由于第一垫高结构61的存在,在第一绝缘层20位于第一走线段与第二走线段之间的第一表面上会形成沿第一方向延伸的第一台阶,而第一台阶的斜面即为坡面21。同时由于第二垫高结构62的存在,在第一绝缘层20位于第一走线段与第二走线段之间的第一表面上会形成沿第一方向延伸的第二台阶,而第二台阶的斜面亦为坡面21。因此,该实施方式能够形成面向第一走线30的坡面21以及面向第二走线40的坡面21,使得第一走线段的金属氧化物和第二走线段的金属氧化物在坡面21处均需要爬坡,有效阻挡了两条走线段的金属氧化物向对方扩散,进而防止第一走线与第二走线短接。Based on the above embodiments, in other embodiments, as shown in FIGS. 14 and 15 , the raising structure includes a first raising structure 61 and a second raising structure 62 ; the first raising structure 61 is located where the substrate 10 is located. The vertical projection on the plane overlaps with the vertical projection of the first trace 30 on the plane of the base substrate 10; the vertical projection of the second raising structure 62 on the plane of the base substrate 10 overlaps with the vertical projection of the second trace 40 on the plane of the base substrate 10. The vertical projections on the plane of the base substrate 10 overlap. In this way, combined with the technical solution of the present invention, it can be seen that due to the existence of the first raising structure 61, a line extending in the first direction will be formed on the first surface of the first insulating layer 20 between the first wiring segment and the second wiring segment. The first step, and the slope of the first step is the slope 21. At the same time, due to the existence of the second raising structure 62, a second step extending along the first direction will be formed on the first surface of the first insulation layer 20 between the first wiring segment and the second wiring segment, and the second step The slope of is also slope 21. Therefore, this embodiment can form the slope 21 facing the first trace 30 and the slope 21 facing the second trace 40, so that the metal oxide of the first trace segment and the metal oxide of the second trace segment are on the slope. All 21 locations require climbing, which effectively blocks the metal oxides of the two trace segments from diffusing to each other, thereby preventing the first trace and the second trace from being short-circuited.
在一些实施例方式中,第二走线为触控走线,第二垫高结构为导体,第二走线通过至少一个通孔与第二垫高结构电连接。参考图16,当第二走线40为触控走线且第二垫高结构62为导体时,在利用第二垫高结构62形成坡面21的同时,将第二走线40通过通孔与第二垫高结构62电连接,能够降低触控走线的阻抗,从而能够降低触控信号在触控走线上的电压降,降低功耗,提升触控信号的传输精度。In some embodiments, the second trace is a touch trace, the second pad structure is a conductor, and the second trace is electrically connected to the second pad structure through at least one through hole. Referring to FIG. 16 , when the second trace 40 is a touch trace and the second raising structure 62 is a conductor, while the second raising structure 62 is used to form the slope 21 , the second trace 40 is passed through the through hole. Being electrically connected to the second raising structure 62 can reduce the impedance of the touch trace, thereby reducing the voltage drop of the touch signal on the touch trace, reducing power consumption, and improving the transmission accuracy of the touch signal.
上述各实施方式中,阵列基板还包括位于衬底基板和第一绝缘层之间的第一金属层,第一金属层包括多条沿第二方向延伸且沿第一方向排列的扫描线以及至少一条沿第一方向延伸的虚拟走线,虚拟走线与扫描线电绝缘,且虚拟走线为垫高结构。如此,垫高结构可以与扫描线在同一道光刻工艺中制备,能够避免增加光刻工艺,即可以提升阵列基板的制备效率,又可以节约成本。In each of the above embodiments, the array substrate further includes a first metal layer located between the base substrate and the first insulating layer. The first metal layer includes a plurality of scan lines extending along the second direction and arranged along the first direction and at least A dummy trace extends along the first direction, the dummy trace is electrically insulated from the scan line, and the dummy trace is a raised structure. In this way, the pad structure can be prepared in the same photolithography process as the scan line, which can avoid additional photolithography processes, thereby improving the preparation efficiency of the array substrate and saving costs.
在一些实施方式中,如图17所示,阵列基板还包括像素电路层、第一电极层70、第三绝缘层80和第二电极层90,像素电路层包括第一金属层(即垫高结构60所在的金属层)、第一绝缘层20和第二金属层,第二金属层包括第一走线30和第二走线40,第一走线30为数据走线,第二走线40为触控走线,第三绝缘层80为无机层,第一电极层70位于第二绝缘层50远离衬底基板10一侧的表面,第二绝缘层50、第一电极层70、第三绝缘层80和第二电极层90层叠设置,第二电极层90通过过孔与第二走线40连接。可选的,上述阵列基板能够采用7mask工艺制备,其中,第二电极层90可包括触控电极,触控电极通过贯穿第三绝缘层80与第二绝缘层50的过孔与触控走线电连接;或者,第一电极层70可包括触控电极,第二电极层90可包括跨桥结构,触控电极通过跨桥结构与触控走线电连接(图17所示结构)。In some embodiments, as shown in FIG. 17 , the array substrate further includes a pixel circuit layer, a first electrode layer 70 , a third insulating layer 80 and a second electrode layer 90 . The pixel circuit layer includes a first metal layer (i.e., a padding layer). The metal layer where the structure 60 is located), the first insulating layer 20 and the second metal layer. The second metal layer includes a first wiring 30 and a second wiring 40. The first wiring 30 is a data wiring, and the second wiring 40 is a touch trace, the third insulating layer 80 is an inorganic layer, the first electrode layer 70 is located on the surface of the second insulating layer 50 away from the base substrate 10, the second insulating layer 50, the first electrode layer 70, the The three insulating layers 80 and the second electrode layer 90 are stacked, and the second electrode layer 90 is connected to the second wiring 40 through via holes. Optionally, the above-mentioned array substrate can be prepared using a 7mask process, in which the second electrode layer 90 can include a touch electrode, and the touch electrode passes through a via hole and a touch trace that penetrates the third insulating layer 80 and the second insulating layer 50 Electrical connection; alternatively, the first electrode layer 70 may include a touch electrode, the second electrode layer 90 may include a cross-bridge structure, and the touch electrodes are electrically connected to the touch traces through the cross-bridge structure (the structure shown in FIG. 17 ).
此外,本发明实施例还提供了一种显示面板,包括上述任意一实施例提供的阵列基板。In addition, an embodiment of the present invention also provides a display panel, including the array substrate provided in any of the above embodiments.
最后,本发明实施例还提供了一种显示装置,包括上述实施例提供的显示面板。如图18所示,显示装置200包括本发明实施例提供的显示面板100。该显示装置可以是手机、电脑、电视和车载显示装置等其他具有显示功能的显示装置,本发明实施例不做具体限定。本发明实施例提供的显示装置200,具有本发明实施例提供的阵列基板的有益效果,具体可以参考上述实施例对于阵列基板的具体说明,本发明实施例在此不再赘述。Finally, embodiments of the present invention also provide a display device, including the display panel provided in the above embodiments. As shown in FIG. 18 , the display device 200 includes the display panel 100 provided by the embodiment of the present invention. The display device may be a mobile phone, a computer, a television, a vehicle-mounted display device, or any other display device with a display function, which is not specifically limited in the embodiment of the present invention. The display device 200 provided by the embodiment of the present invention has the beneficial effects of the array substrate provided by the embodiment of the present invention. For details, reference can be made to the specific description of the array substrate in the above embodiment, and the details of the embodiment of the present invention will not be repeated here.
需要说明的是,在本文中,诸如“第一”和“第二”等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that in this article, relational terms such as “first” and “second” are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply these There is no such actual relationship or sequence between entities or operations. Furthermore, the terms "comprises," "comprises," or any other variations thereof are intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also those not expressly listed other elements, or elements inherent to the process, method, article or equipment. Without further limitation, an element defined by the statement "comprises a..." does not exclude the presence of additional identical elements in a process, method, article, or apparatus that includes the stated element.
以上所述仅是本发明的具体实施方式,使本领域技术人员能够理解或实现本发明。对这些实施例的多种修改对本领域的技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所述的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above descriptions are only specific embodiments of the present invention, enabling those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be practiced in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention is not to be limited to the embodiments described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
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