CN116867295A - A trans perovskite solar cell using cobalt oxide as a hole transport material and its preparation method - Google Patents
A trans perovskite solar cell using cobalt oxide as a hole transport material and its preparation method Download PDFInfo
- Publication number
- CN116867295A CN116867295A CN202310739609.XA CN202310739609A CN116867295A CN 116867295 A CN116867295 A CN 116867295A CN 202310739609 A CN202310739609 A CN 202310739609A CN 116867295 A CN116867295 A CN 116867295A
- Authority
- CN
- China
- Prior art keywords
- perovskite
- hole transport
- transport layer
- trans
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005525 hole transport Effects 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 title claims abstract description 9
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 229910000428 cobalt oxide Inorganic materials 0.000 title abstract description 6
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 title abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000010521 absorption reaction Methods 0.000 claims abstract description 29
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 7
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 50
- 238000004528 spin coating Methods 0.000 claims description 41
- 239000002243 precursor Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 32
- 229910021503 Cobalt(II) hydroxide Inorganic materials 0.000 claims description 31
- ASKVAEGIVYSGNY-UHFFFAOYSA-L cobalt(ii) hydroxide Chemical compound [OH-].[OH-].[Co+2] ASKVAEGIVYSGNY-UHFFFAOYSA-L 0.000 claims description 31
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 21
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 20
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 18
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 15
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims description 10
- 239000011654 magnesium acetate Substances 0.000 claims description 10
- 229940069446 magnesium acetate Drugs 0.000 claims description 10
- 235000011285 magnesium acetate Nutrition 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- -1 methylamine ion Chemical class 0.000 claims description 9
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000003995 emulsifying agent Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- ZOAIGCHJWKDIPJ-UHFFFAOYSA-M caesium acetate Chemical compound [Cs+].CC([O-])=O ZOAIGCHJWKDIPJ-UHFFFAOYSA-M 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- QLBHNVFOQLIYTH-UHFFFAOYSA-L dipotassium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [K+].[K+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O QLBHNVFOQLIYTH-UHFFFAOYSA-L 0.000 claims description 4
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 claims description 4
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical group [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000706 filtrate Substances 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 2
- 229910001453 nickel ion Inorganic materials 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical group [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims 1
- CZMAIROVPAYCMU-UHFFFAOYSA-N lanthanum(3+) Chemical compound [La+3] CZMAIROVPAYCMU-UHFFFAOYSA-N 0.000 claims 1
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 abstract 1
- 239000011707 mineral Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 34
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 27
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 27
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 27
- 239000007788 liquid Substances 0.000 description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 18
- QHJPGANWSLEMTI-UHFFFAOYSA-N aminomethylideneazanium;iodide Chemical compound I.NC=N QHJPGANWSLEMTI-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 18
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 18
- 239000012299 nitrogen atmosphere Substances 0.000 description 18
- 239000004677 Nylon Substances 0.000 description 17
- 229920001778 nylon Polymers 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 11
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 238000000605 extraction Methods 0.000 description 10
- 239000012046 mixed solvent Substances 0.000 description 10
- 239000012296 anti-solvent Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 8
- 229910000480 nickel oxide Inorganic materials 0.000 description 7
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000002105 nanoparticle Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 229910005855 NiOx Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 description 3
- 229910002451 CoOx Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- KWVPRPSXBZNOHS-UHFFFAOYSA-N 2,4,6-Trimethylaniline Chemical compound CC1=CC(C)=C(N)C(C)=C1 KWVPRPSXBZNOHS-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- AOPCKOPZYFFEDA-UHFFFAOYSA-N nickel(2+);dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O AOPCKOPZYFFEDA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种氧化钴作为空穴传输材料的反式钙钛矿太阳能电池及其制备方法,属于制备半导体器件的方法技术领域。本发明反式钙钛矿太阳能电池结构由下至上依次为导电玻璃、空穴传输层、钙钛矿吸收层、电子传输层、电极,所述空穴传输层以CoOx作为空穴传输材料。该电池降低了钙钛矿吸收层的衰减并优化了界面处空穴传输动力学,结合金属离子掺杂,提升了CoOx的导电性,获得了更好的器件性能,从而提高反式钙钛矿太阳能电池的效率及稳定性。本发明的制备方法操作简单、成本低、绿色环保,具有良好的应用前景。
The invention discloses a trans-perovskite solar cell in which cobalt oxide is used as a hole transport material and a preparation method thereof, and belongs to the technical field of methods for preparing semiconductor devices. The trans perovskite solar cell structure of the present invention consists of conductive glass, hole transport layer, perovskite absorption layer, electron transport layer, and electrode from bottom to top. The hole transport layer uses CoO x as the hole transport material. This battery reduces the attenuation of the perovskite absorption layer and optimizes the hole transport dynamics at the interface. Combined with metal ion doping, it improves the conductivity of CoO x and obtains better device performance, thereby improving trans-perovskite efficiency and stability of mineral solar cells. The preparation method of the invention is simple to operate, low in cost, green and environmentally friendly, and has good application prospects.
Description
技术领域Technical field
本发明涉及制备半导体器件的方法技术领域,尤其涉及一种氧化钴作为空穴传输材料的反式钙钛矿太阳能电池及其制备方法。The present invention relates to the technical field of methods for preparing semiconductor devices, and in particular to a trans perovskite solar cell using cobalt oxide as a hole transport material and a preparation method thereof.
背景技术Background technique
钙钛矿太阳能电池(PSCs)以其高功率转换效率(PCE)和低制造成本作为新一代光伏器件而备受关注。钙钛矿的双极性半导体光学特性为设计不同的器件结构的器件提供了可能性。其中,倒置的平面结构是由于其简单性、低温处理的可能性和低滞后性而受到越来越多的关注。并呈现出成为商业化光伏器件的潜力。空穴传输层(HTL)对倒置钙钛矿太阳能电池(PSCs)的器件性能和长期稳定性起着主导作用。目前,各种有机空穴传输材料(HTMs)已得到应用,特别是聚(3,4-乙烯二氧噻吩):(聚苯乙烯磺酸盐)(PEDOT:PSS)和聚双(4-苯基)(2,4,6-三甲基苯基)胺(PTAA)。然而,它们的制造工艺复杂、固有的化学挥发性、稳定性差、成本高,阻碍了它们向商业化的大规模应用。其中,无机p型半导体因其高透光率、高空穴迁移率和高化学稳定性而特别具有吸引力。通过比较,几种无机HTMs如CuSCN,NiOx,VOx和WO3已被用作有机空穴传输层的替代品。其中,NiOx因其透光率高、良好的化学稳定性,与钙钛矿较匹配的能级,便于空穴收集和电子阻碍而受到广泛关注。因此,在不同的器件结构中,它被研究作为钙钛矿太阳能电池的HTL。由于器件稳定性是PSCs的主要关注点,NiOx因其优异的化学稳定性可以提高器件稳定性,因此具有良好的应用前景。然而,NiOx薄膜表面的Ni3+物质被认为是缺陷,这可能导致钙钛矿的衰减和NiOx/钙钛矿界面处空穴传输动力学的恶化。因此,裸NiOx基PSCs的效率和稳定性都很难得到提升。作为铁系家族的另一成员,钴与镍具有类似的性质。它们的氧化物形式具有相似的p型半导体特性,CoOx因其高透光率、合适的功函数和固有的稳定性而受到广泛关注。目前,CoOx HTL可以通过溅射、电沉积或脉冲激光沉积技术生产。然而,这些方法是复杂和昂贵的。因此,作为一种低成本的替代方法,现有技术中利用溶液法,制备了CoOx薄膜作为HTL,但这些制备方法所用溶剂为有机溶剂,成本高有毒的有机溶剂的使用会危害人类的健康,污染生态环境。而且目前裸CoOx基PSCs的器件效率和稳定性仍然落后。文献报道的CoOx基PSCs的PCE差异显著,从低于10%到超过14.5%。这可能是在钴氧化物中,低导电性的问题所致,低电导率导致复合增加,空穴抽取减少。此外,它的电子结构应该调整,以更好地与钙钛矿的能级相匹配。Perovskite solar cells (PSCs) have attracted much attention as a new generation of photovoltaic devices due to their high power conversion efficiency (PCE) and low manufacturing cost. The ambipolar semiconductor optical properties of perovskites provide the possibility to design devices with different device structures. Among them, inverted planar structures are attracting increasing attention due to their simplicity, possibility of low-temperature processing, and low hysteresis. And it shows the potential to become a commercial photovoltaic device. The hole transport layer (HTL) plays a leading role in the device performance and long-term stability of inverted perovskite solar cells (PSCs). Currently, various organic hole transport materials (HTMs) have been used, especially poly(3,4-ethylenedioxythiophene): (polystyrene sulfonate) (PEDOT: PSS) and polybis(4-phenyl) (2,4,6-trimethylphenyl)amine (PTAA). However, their complex manufacturing processes, inherent chemical volatility, poor stability, and high cost hinder their large-scale commercial application. Among them, inorganic p-type semiconductors are particularly attractive due to their high light transmittance, high hole mobility and high chemical stability. By comparison, several inorganic HTMs such as CuSCN, NiO , VO and WO have been used as alternatives to organic hole transport layers. Among them, NiO x has received widespread attention due to its high transmittance, good chemical stability, and energy level that matches perovskite, which facilitates hole collection and electron blocking. Therefore, it is studied as HTL for perovskite solar cells in different device structures. Since device stability is the main concern of PSCs, NiO x has good application prospects because of its excellent chemical stability that can improve device stability. However, Ni3 + species on the surface of NiOx films are considered defects, which may lead to the attenuation of perovskite and the deterioration of hole transport dynamics at the NiOx /perovskite interface. Therefore, it is difficult to improve the efficiency and stability of bare NiO x- based PSCs. As another member of the iron family, cobalt has similar properties to nickel. Their oxide forms share similar p-type semiconductor properties, with CoOx attracting widespread attention due to its high transmittance, suitable work function, and inherent stability. Currently, CoO x HTL can be produced by sputtering, electrodeposition or pulsed laser deposition techniques. However, these methods are complex and expensive. Therefore, as a low-cost alternative method, CoO x films are prepared as HTL using solution methods in the prior art. However, the solvents used in these preparation methods are organic solvents. The use of high-cost and toxic organic solvents will harm human health. , polluting the ecological environment. And the current device efficiency and stability of bare CoO x- based PSCs still lag behind. The PCE of CoOx - based PSCs reported in the literature varies significantly, ranging from less than 10% to more than 14.5%. This may be caused by the problem of low conductivity in cobalt oxide, which leads to increased recombination and reduced hole extraction. In addition, its electronic structure should be adjusted to better match the energy levels of the perovskite.
发明内容Contents of the invention
有鉴于现有技术的上述缺陷,在本发明的第一方面,提供了一种导电性好、稳定性高的反式钙钛矿太阳能电池,所述反式钙钛矿太阳能电池的结构由下至上依次为导电玻璃、空穴传输层、钙钛矿吸收层、电子传输层、电极;所述空穴传输层以CoOx作为空穴传输材料,所述空穴传输层中,通过镧离子、镍离子、铯离子、镁离子中的至少一种金属离子对CoOx进行掺杂。In view of the above-mentioned defects of the prior art, in the first aspect of the present invention, a trans-perovskite solar cell with good conductivity and high stability is provided. The structure of the trans-perovskite solar cell is as follows: The top order is conductive glass, hole transport layer, perovskite absorption layer, electron transport layer, and electrode; the hole transport layer uses CoO x as the hole transport material. In the hole transport layer, through lanthanum ions, CoO x is doped with at least one metal ion selected from nickel ions, cesium ions, and magnesium ions.
传统的氧化镍(NiOx)薄膜表面的Ni3+缺陷可能导致钙钛矿的衰减和NiOx/钙钛矿界面处空穴传输动力学的恶化。本发明采用氧化钴(CoOx)作为钙钛矿太阳能电池的空穴传输材料,CoOx薄膜中包括Co2+和Co3+,而此时CoOx薄膜表面的Co3+物质不被认为是缺陷,因此CoOx会以更高的效率和稳定性取代镍氧化物作为钙钛矿太阳能电池的空穴传输层,结合金属离子掺杂,提升了CoOx的导电性,获得了更好的器件性能。Ni3 + defects on the surface of conventional nickel oxide ( NiOx ) films may lead to perovskite attenuation and deterioration of hole transport dynamics at the NiOx /perovskite interface. The present invention uses cobalt oxide ( CoO , therefore CoO x will replace nickel oxide as the hole transport layer of perovskite solar cells with higher efficiency and stability. Combined with metal ion doping, the conductivity of CoO x will be improved and better device performance will be obtained. .
在本发明的第二方面,提供了一种操作简单、成本低、绿色环保的反式钙钛矿太阳能电池的制备方法,包括如下步骤:In a second aspect of the present invention, a method for preparing a trans-perovskite solar cell that is simple to operate, low-cost, green and environmentally friendly is provided, including the following steps:
S1、将氢氧化钴与掺杂剂混合后溶于水,向所得溶液中加入络合剂、乳化剂,随后在一定温度下进行反应;反应结束后经过滤收集滤液,得到CoOx前驱体溶液;S1. Mix cobalt hydroxide and a dopant and dissolve it in water. Add a complexing agent and an emulsifier to the resulting solution, and then react at a certain temperature. After the reaction, collect the filtrate by filtration to obtain a CoO x precursor solution. ;
S2、去除导电玻璃表面杂质,得到玻璃衬底;S2. Remove impurities on the conductive glass surface to obtain a glass substrate;
S3、将CoOx前驱体溶液涂布于玻璃衬底表面,经热处理,得到空穴传输层;S3. Coat the CoO x precursor solution on the surface of the glass substrate, and undergo heat treatment to obtain a hole transport layer;
S4、在空穴传输层表面制备并得到钙钛矿吸收层;S4. Prepare and obtain a perovskite absorption layer on the surface of the hole transport layer;
S5、将富勒烯衍生物溶于氯苯,得到富勒烯衍生物的氯苯溶液,将其涂布于钙钛矿吸收层表面,经热处理,得到电子传输层;S5. Dissolve the fullerene derivative in chlorobenzene to obtain a chlorobenzene solution of the fullerene derivative, apply it on the surface of the perovskite absorption layer, and undergo heat treatment to obtain an electron transport layer;
S6、在电子传输层表面蒸镀金属材料形成电极,得到反式钙钛矿太阳能电池。S6. Evaporate metal materials on the surface of the electron transport layer to form electrodes to obtain trans perovskite solar cells.
本发明开发了一种简单和绿色的方法来获得溶液处理的优越CoOx空穴传输层,并且提供了金属离子掺杂策略用于提升钴氧化物的导电性。优化的金属离子掺杂CoOx空穴传输层具有良好的导电性,并且具有较高的器件稳定性。本发明使用CoOx作为空穴传输层获得高效稳定的钙钛矿太阳能电池,具有良好的应用前景。The present invention develops a simple and green method to obtain a solution-processed superior CoO x hole transport layer, and provides a metal ion doping strategy for improving the conductivity of cobalt oxide. The optimized metal ion doped CoO x hole transport layer has good conductivity and high device stability. The present invention uses CoO x as a hole transport layer to obtain an efficient and stable perovskite solar cell, which has good application prospects.
优选的,所述步骤S1中,所述掺杂剂为硝酸镧、硝酸镍、乙酸铯、乙酸镁中的至少一种。Preferably, in step S1, the dopant is at least one of lanthanum nitrate, nickel nitrate, cesium acetate, and magnesium acetate.
优选的,所述步骤S1中,以摩尔百分比计,所述掺杂剂的添加量为所述氢氧化钴的10%~50%。Preferably, in step S1, the amount of the dopant added is 10% to 50% of the cobalt hydroxide in terms of molar percentage.
优选的,所述步骤S1中,所述络合剂为乙二胺四乙酸、乙二胺四乙酸二钾、乙二胺四乙酸二钠中的至少一种。Preferably, in step S1, the complexing agent is at least one of ethylenediaminetetraacetic acid, dipotassium ethylenediaminetetraacetate, and disodium ethylenediaminetetraacetate.
优选的,所述步骤S1中,以摩尔百分比计,所述络合剂的添加量为所述氢氧化钴的50%~80%。Preferably, in step S1, the addition amount of the complexing agent is 50% to 80% of the cobalt hydroxide in terms of molar percentage.
优选的,所述步骤S1中,所述乳化剂为乙醇胺、甲酰胺、乙二醇中的至少一种。Preferably, in step S1, the emulsifier is at least one of ethanolamine, formamide, and ethylene glycol.
优选的,所述步骤S1中,所述氢氧化钴质量和乳化剂体积的添加量关系为0.5~1.5mg/μL。Preferably, in the step S1, the relationship between the mass of the cobalt hydroxide and the volume of the emulsifier is 0.5 to 1.5 mg/μL.
优选的,所述步骤S1中,所述反应的温度为60~80℃,反应时间为12~24h。Preferably, in step S1, the reaction temperature is 60-80°C, and the reaction time is 12-24 hours.
优选的,所述步骤S2中,所述导电玻璃为FTO玻璃基底。Preferably, in step S2, the conductive glass is an FTO glass substrate.
优选的,所述步骤S3中,所述涂布采用旋涂法进行,旋涂转速为2000~4000rpm,旋涂时间为30~60s。Preferably, in the step S3, the coating is performed by a spin coating method, the spin coating speed is 2000-4000 rpm, and the spin-coating time is 30-60 s.
优选的,所述步骤S3中,所述热处理的温度为200~400℃,处理时间为1~2h。Preferably, in step S3, the temperature of the heat treatment is 200-400°C, and the treatment time is 1-2 hours.
优选的,所述步骤S4中,所述钙钛矿吸收层的材料为APbX3钙钛矿晶体,其中A为一价铯离子、甲铵离子、甲脒离子中的至少一种,X为碘离子或溴离子。Preferably, in step S4, the material of the perovskite absorption layer is APbX 3 perovskite crystal, wherein A is at least one of monovalent cesium ions, carboxamide ions, and formamidine ions, and X is iodine. ions or bromide ions.
优选的,所述步骤S5中,所述富勒烯衍生物的氯苯溶液中富勒烯衍生物的浓度为20~30mg/mL。Preferably, in step S5, the concentration of the fullerene derivative in the chlorobenzene solution of the fullerene derivative is 20 to 30 mg/mL.
优选的,所述步骤S5中,所述富勒烯衍生物为富勒烯衍生物PCBM。Preferably, in step S5, the fullerene derivative is fullerene derivative PCBM.
优选的,所述步骤S5中,所述涂布采用旋涂法进行,旋涂转速为2000~3000rpm,旋涂时间为40~60s。Preferably, in the step S5, the coating is performed by a spin coating method, the spin coating speed is 2000-3000 rpm, and the spin coating time is 40-60 s.
优选的,所述步骤S5中,所述热处理的温度为70~100℃,处理时间为5~10min。Preferably, in step S5, the temperature of the heat treatment is 70-100°C, and the treatment time is 5-10 minutes.
优选的,所述步骤S6中,所述电极的金属材料为银或铝。Preferably, in step S6, the metal material of the electrode is silver or aluminum.
与现有技术相比,本发明具有以下优点和有益效果:Compared with the existing technology, the present invention has the following advantages and beneficial effects:
本发明提供了一种反式钙钛矿太阳能电池,该电池采用具有高透光率、合适的功函数和固有稳定性的CoOx作为空穴传输层的空穴传输材料,降低了钙钛矿吸收层的衰减并优化了界面处空穴传输动力学,结合金属离子掺杂,提升了CoOx的导电性,获得了更好的器件性能,从而提高反式钙钛矿太阳能电池的效率及稳定性。The invention provides a trans perovskite solar cell, which uses CoO x with high light transmittance, suitable work function and inherent stability as the hole transport material of the hole transport layer, which reduces the The attenuation of the absorber layer optimizes the hole transport dynamics at the interface, combined with metal ion doping, improves the conductivity of CoO x and achieves better device performance, thus improving the efficiency and stability of trans perovskite solar cells. sex.
本发明提供了一种反式钙钛矿太阳能电池的制备方法,该方法操作简单、成本低、绿色环保,具有良好的应用前景。The invention provides a method for preparing a trans-perovskite solar cell, which is simple to operate, low in cost, green and environmentally friendly, and has good application prospects.
附图说明Description of the drawings
图1为本发明反式钙钛矿太阳能电池的结构示意图,图中1为导电玻璃,2为空穴传输层,3为钙钛矿吸收层,4为电子传输层,5为电极;Figure 1 is a schematic structural diagram of a trans perovskite solar cell of the present invention. In the figure, 1 is conductive glass, 2 is a hole transport layer, 3 is a perovskite absorption layer, 4 is an electron transport layer, and 5 is an electrode;
图2为实施例3和对比例1的空穴传输层的X射线衍射(XRD)图谱;Figure 2 is an X-ray diffraction (XRD) pattern of the hole transport layer of Example 3 and Comparative Example 1;
图3为实施例3和对比例1的空穴传输层的扫描电子显微镜(SEM)图像;Figure 3 is a scanning electron microscope (SEM) image of the hole transport layer of Example 3 and Comparative Example 1;
图4为实施例3和对比例1的空穴传输层的紫外可见光透过率曲线图;Figure 4 is a graph of ultraviolet and visible light transmittance of the hole transport layer of Example 3 and Comparative Example 1;
图5为实施例1~4和对比例1的电池的J-V曲线图;Figure 5 is a J-V curve diagram of the batteries of Examples 1 to 4 and Comparative Example 1;
图6为实施例3和对比例2的电池的热稳定性曲线图。Figure 6 is a thermal stability graph of the batteries of Example 3 and Comparative Example 2.
具体实施方式Detailed ways
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。下列实施例中未注明具体条件的实验方法,按照常规方法和条件,或按照商品说明书选择。The present invention is further described below by means of examples, but the present invention is not limited to the scope of the described examples. Experimental methods that do not indicate specific conditions in the following examples should be selected according to conventional methods and conditions, or according to product specifications.
实施例1Example 1
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和乙酸镁混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸,最后加入25μL乙醇胺,以摩尔百分比计,乙酸镁的添加量为氢氧化钴的10%,乙二胺四乙酸的添加量为氢氧化钴的50%;随后在80℃混合反应24h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg cobalt hydroxide and magnesium acetate and dissolve it in 5 mL deionized water. Add ethylenediaminetetraacetic acid to the resulting solution, and finally add 25 μL ethanolamine. In terms of molar percentage, the amount of magnesium acetate added is cobalt hydroxide. 10% of ethylenediaminetetraacetic acid and 50% of cobalt hydroxide; then mix and react at 80°C for 24 hours. After the reaction is completed, cool to room temperature and filter with a 0.45 μm nylon filter to prepare a CoO x precursor solution. ;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以4000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为30s,先在80℃加热5min,随后在300℃下退火1.5h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 4000 rpm. The coating time is 30 seconds. First, heat at 80°C for 5 minutes, and then anneal at 300°C for 1.5 hours for heat treatment. Obtain a hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a trans perovskite solar cell.
实施例2Example 2
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和乙酸镁混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸,最后加入25μL乙醇胺,以摩尔百分比计,乙酸镁的添加量为氢氧化钴的20%,乙二胺四乙酸的添加量为氢氧化钴的50%;随后在80℃混合反应24h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg cobalt hydroxide and magnesium acetate and dissolve it in 5 mL deionized water. Add ethylenediaminetetraacetic acid to the resulting solution, and finally add 25 μL ethanolamine. In terms of molar percentage, the amount of magnesium acetate added is cobalt hydroxide. 20% of ethylenediaminetetraacetic acid was added to 50% of cobalt hydroxide; then the mixture was reacted at 80°C for 24 hours. After the reaction was completed, it was cooled to room temperature and filtered with a 0.45 μm nylon filter to prepare a CoO x precursor solution. ;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以4000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为30s,先在80℃加热5min,随后在300℃下退火1.5h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 4000 rpm. The coating time is 30 seconds. First, heat at 80°C for 5 minutes, and then anneal at 300°C for 1.5 hours for heat treatment. Obtain a hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a trans perovskite solar cell.
实施例3Example 3
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和乙酸镁混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸,最后加入25μL乙醇胺,以摩尔百分比计,乙酸镁的添加量为氢氧化钴的30%,乙二胺四乙酸的添加量为氢氧化钴的50%;随后在80℃混合反应24h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg cobalt hydroxide and magnesium acetate and dissolve it in 5 mL deionized water. Add ethylenediaminetetraacetic acid to the resulting solution, and finally add 25 μL ethanolamine. In terms of molar percentage, the amount of magnesium acetate added is cobalt hydroxide. 30% of ethylenediaminetetraacetic acid was added to 50% of cobalt hydroxide; then the mixture was reacted at 80°C for 24 hours. After the reaction was completed, it was cooled to room temperature and filtered with a 0.45 μm nylon filter to prepare a CoO x precursor solution. ;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以4000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为30s,先在80℃加热5min,随后在300℃下退火1.5h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 4000 rpm. The coating time is 30 seconds. First, heat at 80°C for 5 minutes, and then anneal at 300°C for 1.5 hours for heat treatment. Obtain a hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a trans perovskite solar cell.
实施例4Example 4
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和乙酸镁混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸,最后加入25μL乙醇胺,以摩尔百分比计,乙酸镁的添加量为氢氧化钴的40%,乙二胺四乙酸的添加量为氢氧化钴的50%;随后在80℃混合反应24h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg cobalt hydroxide and magnesium acetate and dissolve it in 5 mL deionized water. Add ethylenediaminetetraacetic acid to the resulting solution, and finally add 25 μL ethanolamine. In terms of molar percentage, the amount of magnesium acetate added is cobalt hydroxide. 40% of ethylenediaminetetraacetic acid, and the added amount of ethylenediaminetetraacetic acid is 50% of cobalt hydroxide; then mix and react at 80°C for 24 hours. After the reaction is completed, cool to room temperature and filter with a 0.45 μm nylon filter to prepare a CoO x precursor solution. ;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以4000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为30s,先在80℃加热5min,随后在300℃下退火1.5h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 4000 rpm. The coating time is 30 seconds. First, heat at 80°C for 5 minutes, and then anneal at 300°C for 1.5 hours for heat treatment. Obtain a hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a trans perovskite solar cell.
实施例5Example 5
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和硝酸镧混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸二钾,最后加入75μL甲酰胺,以摩尔百分比计,硝酸镧的添加量为氢氧化钴的50%,乙二胺四乙酸二钾的添加量为氢氧化钴的80%;随后在60℃混合反应12h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg of cobalt hydroxide and lanthanum nitrate and dissolve it in 5 mL of deionized water. Add dipotassium ethylenediaminetetraacetate to the resulting solution, and finally add 75 μL of formamide. In terms of mole percentage, the amount of lanthanum nitrate added is 50% of cobalt hydroxide, and the added amount of dipotassium ethylenediaminetetraacetate is 80% of cobalt hydroxide; then mix and react at 60°C for 12 hours, cool to room temperature after the reaction, and filter with a 0.45 μm nylon filter to prepare CoO x precursor solution;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以2000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为60s,先在80℃加热5min,随后在200℃下退火2h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 2000 rpm. The coating time is 60 seconds. First, heat at 80°C for 5 minutes, and then anneal at 200°C for 2 hours for heat treatment. Obtain hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为20mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为2000rmp/s,旋涂时间为60s,在70℃加热10min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 20 mg/mL. Spin-coat it to cover the surface of the perovskite absorption layer at a spin-coating speed of 2000 rpm. /s, the spin coating time is 60s, and heated at 70°C for 10min to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Al电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Al electrode to obtain a trans perovskite solar cell.
实施例6Example 6
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和硝酸镍混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸二钠,最后加入25μL乙二醇,以摩尔百分比计,硝酸镍的添加量为氢氧化钴的10%,乙二胺四乙酸二钠的添加量为氢氧化钴的50%;随后在80℃混合反应12h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg of cobalt hydroxide and nickel nitrate and dissolve it in 5 mL of deionized water. Add disodium ethylenediaminetetraacetate to the resulting solution, and finally add 25 μL of ethylene glycol. The amount of nickel nitrate added is based on molar percentage. It is 10% of cobalt hydroxide, and the added amount of disodium ethylenediaminetetraacetate is 50% of cobalt hydroxide; then mix and react at 80°C for 12 hours. After the reaction is completed, cool to room temperature and filter with a 0.45 μm nylon filter to prepare Obtain CoO x precursor solution;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以2000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为60s,先在80℃加热5min,随后在400℃下退火1h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 2000 rpm. The coating time is 60 seconds. First, heat at 80°C for 5 minutes, and then anneal at 400°C for 1 hour for heat treatment. Obtain hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为30mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为2000rmp/s,旋涂时间为60s,在100℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 30 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 2000 rpm. /s, the spin coating time is 60s, and heated at 100°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Al电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Al electrode to obtain a trans perovskite solar cell.
实施例7Example 7
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴和乙酸铯混合后溶于5mL去离子水中,向所得溶液中加入乙二胺四乙酸,最后加入25μL乙醇胺,以摩尔百分比计,乙酸铯的添加量为氢氧化钴的10%,乙二胺四乙酸的添加量为氢氧化钴的50%;随后在80℃混合反应24h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Mix 37.5 mg cobalt hydroxide and cesium acetate and dissolve it in 5 mL deionized water. Add ethylenediaminetetraacetic acid to the resulting solution, and finally add 25 μL ethanolamine. In terms of molar percentage, the added amount of cesium acetate is cobalt hydroxide. 10% of ethylenediaminetetraacetic acid and 50% of cobalt hydroxide; then mix and react at 80°C for 24 hours. After the reaction is completed, cool to room temperature and filter with a 0.45 μm nylon filter to prepare a CoO x precursor solution. ;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以4000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为30s,先在80℃加热5min,随后在300℃下退火1.5h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 4000 rpm. The coating time is 30 seconds. First, heat at 80°C for 5 minutes, and then anneal at 300°C for 1.5 hours for heat treatment. Obtain a hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a trans perovskite solar cell.
对比例1Comparative example 1
反式钙钛矿太阳能电池的制备方法:Preparation method of trans perovskite solar cells:
S1、将37.5mg氢氧化钴溶于5mL去离子水,向所得溶液中加入乙二胺四乙酸,最后加入25μL乙醇胺,以摩尔百分比计,乙二胺四乙酸的添加量为氢氧化钴的50%;随后在80℃混合反应24h,反应结束后冷却至室温,用0.45μm尼龙滤网过滤后制得CoOx前驱体溶液;S1. Dissolve 37.5mg cobalt hydroxide in 5mL deionized water, add ethylenediaminetetraacetic acid to the resulting solution, and finally add 25μL ethanolamine. In terms of molar percentage, the added amount of ethylenediaminetetraacetic acid is 50% of the cobalt hydroxide. %; then mix and react at 80°C for 24 hours. After the reaction is completed, cool to room temperature and filter with a 0.45 μm nylon filter to prepare a CoO x precursor solution;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述CoOx前驱体溶液以4000rpm的转速旋转涂覆铺满所述玻璃衬底表面,涂覆时间为30s,先在80℃加热5min,随后在300℃下退火1.5h进行热处理,得到空穴传输层;S3. Spin-coat the CoO x precursor solution to cover the surface of the glass substrate at a rotation speed of 4000 rpm. The coating time is 30 seconds. First, heat at 80°C for 5 minutes, and then anneal at 300°C for 1.5 hours for heat treatment. Obtain a hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction. The resulting perovskite film is heated in sequence. The plate is heated at 70°C for 1 minute, and then annealed at 120°C for 15 minutes to obtain the perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到反式钙钛矿太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a trans perovskite solar cell.
对比例2Comparative example 2
太阳能电池的制备方法:Preparation method of solar cells:
S1、将50mmol六水硝酸镍溶解于100mL去离子水中;然后加入2.8mL的30%氨水调节溶液的pH值到8,搅拌得到前驱体溶液;然后将其陈化一夜,以5000rmp/s离心速率将所得溶液离心,离心时间为5min;用去离子水洗涤所得沉淀两次,所得沉淀置于真空干燥箱中100℃干燥12h;将得到干燥产物后于270℃烧结120min,制得煅烧产物,煅烧产物为氧化镍纳米颗粒;所得氧化镍纳米颗粒以按浓度8mg/mL分散到去离子水与异丙醇以体积比3:1形成的混合溶剂中,制得氧化镍纳米颗粒分散液;S1. Dissolve 50 mmol nickel nitrate hexahydrate in 100 mL deionized water; then add 2.8 mL of 30% ammonia water to adjust the pH value of the solution to 8, and stir to obtain a precursor solution; then age it overnight and centrifuge at a speed of 5000 rpm/s Centrifuge the obtained solution for 5 minutes; wash the obtained precipitate twice with deionized water, and place the obtained precipitate in a vacuum drying oven to dry at 100°C for 12 hours; sinter the dried product at 270°C for 120 minutes to obtain a calcined product, which is calcined The product is nickel oxide nanoparticles; the obtained nickel oxide nanoparticles are dispersed into a mixed solvent of deionized water and isopropyl alcohol at a volume ratio of 3:1 at a concentration of 8 mg/mL to prepare a nickel oxide nanoparticle dispersion;
S2、尺寸为1.5cm×1.3cm的FTO玻璃基底依次经离子水、丙酮、乙醇中超声清洗、干燥,得到玻璃衬底;S2. The FTO glass substrate with a size of 1.5cm×1.3cm is sequentially ultrasonically cleaned and dried in ionized water, acetone, and ethanol to obtain a glass substrate;
S3、将所述氧化镍纳米颗粒分散液旋涂铺满所述玻璃衬底的表面,其中旋涂速度为4000rpm,旋涂时间为40s;然后在150℃的热板上退火30min,制得氧化镍纳米颗粒空穴传输层;S3. Spin-coat the nickel oxide nanoparticle dispersion liquid to cover the surface of the glass substrate, where the spin-coating speed is 4000 rpm and the spin-coating time is 40 s; then anneal on a hot plate at 150°C for 30 minutes to obtain oxidation Nickel nanoparticle hole transport layer;
S4、在氮气氛围中,将碘化铅、甲脒碘、甲基碘化胺溶于DMF和DMSO以体积比4:1形成的混合溶剂中,得到混合物,混合物中碘化铅、甲脒碘、甲基碘化胺的浓度均为1.4mol/L;用0.2μm尼龙滤头过滤,得到FA0.4MA0.6PbI3钙钛矿前驱液;以5000rpm的速率将FA0.4MA0.6PbI3钙钛矿前驱液旋转涂覆铺满所述氧化镍纳米颗粒空穴传输层表面,涂覆总时间为30s,在旋涂过程的最后11s,使用400μL乙酸乙酯反溶剂进行萃取,将得到的钙钛矿膜依次在加热板上70℃加热1min,随后在120℃退火15min,得到钙钛矿吸收层;S4. In a nitrogen atmosphere, dissolve lead iodide, formamidine iodide, and methylamine iodide in a mixed solvent of DMF and DMSO with a volume ratio of 4:1 to obtain a mixture. In the mixture, lead iodide, formamidine iodide, and The concentrations of , methylamine iodide and methylamine iodide are all 1.4mol/L; filter with a 0.2μm nylon filter to obtain FA 0.4 MA 0.6 PbI 3 perovskite precursor liquid; add FA 0.4 MA 0.6 PbI 3 perovskite at a rate of 5000 rpm. The precursor liquid is spin-coated to cover the surface of the hole transport layer of the nickel oxide nanoparticles. The total coating time is 30 seconds. In the last 11 seconds of the spin-coating process, 400 μL of ethyl acetate antisolvent is used for extraction, and the obtained perovskite is The film was heated on a hot plate at 70°C for 1 min, and then annealed at 120°C for 15 min to obtain a perovskite absorption layer;
S5、在氮气氛围中,将富勒烯衍生物PCBM溶于氯苯,得到浓度为25mg/mL的PCBM的氯苯溶液,将其旋涂铺满钙钛矿吸收层表面,旋涂速度为3000rmp/s,旋涂时间为40s,在80℃加热5min,得到电子传输层;S5. Dissolve the fullerene derivative PCBM in chlorobenzene in a nitrogen atmosphere to obtain a chlorobenzene solution of PCBM with a concentration of 25 mg/mL, and spin-coat it to cover the surface of the perovskite absorption layer. The spin-coating speed is 3000 rpm. /s, the spin coating time is 40s, and heated at 80°C for 5 minutes to obtain the electron transport layer;
S6、所述电子传输层表面蒸镀形成Ag电极,得到太阳能电池。S6. The surface of the electron transport layer is evaporated to form an Ag electrode to obtain a solar cell.
测试例1Test example 1
本发明的反式钙钛矿太阳能电池结构如图1所示,通过X射线衍射(XRD)分别对实施例3和对比例1的空穴传输层的晶体结构进行表征,由图2所示,实施例3和对比例1的衍射峰都显示出立方晶体结构。同时,没有观察到与金属Mg或氧化镁相关的额外衍射峰,表明Mg的掺杂几乎不会改变CoOx的相结构。结合扫描电子显微镜(SEM)观察实施例3和对比例1的空穴传输层的微观形貌,根据图3可以看出,空穴传输层平整度好,表面均匀且致密,进一步说明了Mg掺杂并未改变其表面形貌。The structure of the trans perovskite solar cell of the present invention is shown in Figure 1. The crystal structures of the hole transport layers of Example 3 and Comparative Example 1 were characterized by X-ray diffraction (XRD), as shown in Figure 2. The diffraction peaks of Example 3 and Comparative Example 1 both show cubic crystal structures. At the same time, no additional diffraction peaks related to metallic Mg or magnesium oxide were observed, indicating that the doping of Mg hardly changes the phase structure of CoO x . The micromorphology of the hole transport layer in Example 3 and Comparative Example 1 was observed with a scanning electron microscope (SEM). According to Figure 3, it can be seen that the hole transport layer has good flatness, and the surface is uniform and dense, which further illustrates the Mg-doped The impurity did not change its surface morphology.
测试实施例3和对比例1的空穴传输层的紫外可见光透过率,如图4所示,对比例1的空穴传输层有高的光学透过率,可降低光吸收损失;实施例3的空穴传输层在紫外可见光区域显示出略高于对比例1的高透射率(>90%),光吸收损失小。The ultraviolet and visible light transmittance of the hole transport layer of Example 3 and Comparative Example 1 was tested. As shown in Figure 4, the hole transport layer of Comparative Example 1 has high optical transmittance and can reduce light absorption loss; Example The hole transport layer of 3 shows a slightly higher transmittance (>90%) than Comparative Example 1 in the ultraviolet-visible light region, and the light absorption loss is small.
对本发明部分实施例和对比例钙钛矿太阳能电池的光伏性能进行测试,测试在AM1.5G标准太阳光谱、活性层有效面积在0.06cm2的条件下进行。测试的曲线如图5所示,结果见表1。The photovoltaic performance of the perovskite solar cells of some embodiments and comparative examples of the present invention was tested. The test was conducted under the conditions of AM1.5G standard solar spectrum and the effective area of the active layer was 0.06 cm 2 . The test curve is shown in Figure 5, and the results are shown in Table 1.
表1:Table 1:
由表1测试结果所知,从本发明提升太阳能电池光伏效率的目的出发,实施例1~4的效率皆高于对比例1中未掺杂的太阳能电池。在实施例1~4中,以实施例3的光伏效率最高,为17.04%。实施例3为本发明最佳实施例,根据测试,在两端开路时,实施例3的开路电压为1.02V;在零电压时的电流密度,即短路电流密度为21.80mA/cm2,理论上吸收的光子越多,短路电流越大,在有效面积一定时,相应的短路电流密度也越大;填充因子为最大输出功率与开路电压和短路电流乘积之比,实施例3的填充因子为0.77,器件界面缺陷少。As can be seen from the test results in Table 1, from the purpose of improving the photovoltaic efficiency of solar cells of the present invention, the efficiencies of Examples 1 to 4 are higher than that of the undoped solar cell in Comparative Example 1. Among Examples 1 to 4, Example 3 has the highest photovoltaic efficiency of 17.04%. Embodiment 3 is the best embodiment of the present invention. According to the test, when both ends are open circuit, the open circuit voltage of Embodiment 3 is 1.02V; the current density at zero voltage, that is, the short-circuit current density is 21.80mA/cm 2 , theoretically The more photons absorbed on the surface, the greater the short-circuit current. When the effective area is constant, the corresponding short-circuit current density is also greater; the filling factor is the ratio of the maximum output power to the product of the open-circuit voltage and the short-circuit current. The filling factor of Example 3 is 0.77, the device interface has few defects.
最后在85℃、相对湿度介于30~40%的环境下测试了实施例3和对比例2的太阳能电池的热稳定性。根据图6的测试曲线可知,实施例3可以在测试环境下连续加热120h后保留初始太阳能电池80%的光电转换效率;而对比例2的器件严重退化,对比例2的NiOx基太阳能电池在同等条件下加热90h后只能保留初始太阳能电池60%的光电转换效率,很明显,实施例3表现出了更出色的热稳定性。Finally, the thermal stability of the solar cells of Example 3 and Comparative Example 2 was tested in an environment of 85° C. and a relative humidity of 30 to 40%. According to the test curve in Figure 6, it can be seen that Example 3 can retain 80% of the photoelectric conversion efficiency of the initial solar cell after continuous heating for 120 hours in the test environment; while the device of Comparative Example 2 is severely degraded, and the NiO x- based solar cell of Comparative Example 2 is After heating for 90 hours under the same conditions, only 60% of the photoelectric conversion efficiency of the original solar cell can be retained. Obviously, Example 3 shows better thermal stability.
以上详细描述了本发明的较佳具体实施例。应当理解,本领域的普通技术人员无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此,凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在由权利要求书所确定的保护范围内。The preferred embodiments of the present invention are described in detail above. It should be understood that those skilled in the art can make many modifications and changes based on the concept of the present invention without creative efforts. Therefore, any technical solutions that can be obtained by those skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention and on the basis of the prior art should be within the scope of protection determined by the claims.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310739609.XA CN116867295A (en) | 2023-06-20 | 2023-06-20 | A trans perovskite solar cell using cobalt oxide as a hole transport material and its preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310739609.XA CN116867295A (en) | 2023-06-20 | 2023-06-20 | A trans perovskite solar cell using cobalt oxide as a hole transport material and its preparation method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116867295A true CN116867295A (en) | 2023-10-10 |
Family
ID=88224328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310739609.XA Pending CN116867295A (en) | 2023-06-20 | 2023-06-20 | A trans perovskite solar cell using cobalt oxide as a hole transport material and its preparation method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116867295A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117500339A (en) * | 2023-10-26 | 2024-02-02 | 武汉大学 | A trans perovskite solar cell based on cobalt oxide hole transport layer and its preparation method and application |
-
2023
- 2023-06-20 CN CN202310739609.XA patent/CN116867295A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117500339A (en) * | 2023-10-26 | 2024-02-02 | 武汉大学 | A trans perovskite solar cell based on cobalt oxide hole transport layer and its preparation method and application |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hu et al. | Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance | |
Jung et al. | A low-temperature, solution-processable, Cu-doped nickel oxide hole-transporting layer via the combustion method for high-performance thin-film perovskite solar cells | |
Mali et al. | In situ processed gold nanoparticle-embedded TiO 2 nanofibers enabling plasmonic perovskite solar cells to exceed 14% conversion efficiency | |
Sengupta et al. | Effects of doping, morphology and film-thickness of photo-anode materials for dye sensitized solar cell application–A review | |
Luo et al. | Cross-stacked superaligned carbon nanotube electrodes for efficient hole conductor-free perovskite solar cells | |
Hsieh et al. | Low-temperature, simple and efficient preparation of perovskite solar cells using Lewis bases urea and thiourea as additives: stimulating large grain growth and providing a PCE up to 18.8% | |
CN109904318B (en) | A kind of perovskite thin film preparation method and solar cell based on inverse solution bath | |
US10840030B2 (en) | Organolead halide perovskite film and the method of making the same | |
CN109216557B (en) | Based on citric acid/SnO2Perovskite solar cell of electron transport layer and preparation method thereof | |
Liu et al. | A mixed solvent for rapid fabrication of large-area methylammonium lead iodide layers by one-step coating at room temperature | |
CN104538192A (en) | Organic/inorganic hybrid perovskite battery of porous structure and preparation method thereof | |
Yang et al. | An annealing-free aqueous-processed anatase TiO 2 compact layer for efficient planar heterojunction perovskite solar cells | |
CN108091766A (en) | N-type doped electron transport layer and TiO2Method for producing layered perovskite cells | |
CN103681901B (en) | A kind of doped metal oxide semiconductor solar cell and its preparation method | |
Choi et al. | A novel interface layer for inverted perovskite solar cells fabricated in ambient air under high humidity conditions | |
CN109768167A (en) | Perovskite solar cell without current hysteresis and preparation method thereof | |
CN113410400B (en) | A tin-based perovskite thin film and its quality improvement method and tin-based perovskite solar cell | |
CN114709340A (en) | Wide-band-gap perovskite thin film, solar cell and preparation method of wide-band-gap perovskite thin film | |
CN113903862A (en) | SnO modified based on phenylboronic acid derivatives2Preparation method of perovskite solar cell | |
CN115440893B (en) | Tin-lead perovskite solar cells based on 4-hydroxyphenylethyl ammonium halide salt modified layer and preparation method thereof | |
CN106867305B (en) | The CeO that a kind of surface is modified2Nano material and product | |
CN116867295A (en) | A trans perovskite solar cell using cobalt oxide as a hole transport material and its preparation method | |
CN108767112A (en) | BiI with different hole transmission layers3Solar cell and preparation method thereof | |
CN106981572A (en) | A kind of CeO for preparing surface modification2The method and product of nano material and application | |
CN117812979A (en) | Hole transport layer of rare earth doped nickel oxide, preparation method and application thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |