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CN116855888A - Flexible high-entropy alloy coating and preparation method and application thereof - Google Patents

Flexible high-entropy alloy coating and preparation method and application thereof Download PDF

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CN116855888A
CN116855888A CN202310915367.5A CN202310915367A CN116855888A CN 116855888 A CN116855888 A CN 116855888A CN 202310915367 A CN202310915367 A CN 202310915367A CN 116855888 A CN116855888 A CN 116855888A
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coating
magnetic field
entropy
metal coating
frequency
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廖斌
欧阳晓平
欧阳潇
陈琳
吴杰
吴嘉锟
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Beijing Normal University
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325Electric arc evaporation

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a flexible high-entropy alloy coating and a preparation method and application thereof, and belongs to the technical field of high-entropy alloy. The invention changes the space layout and the potential distribution of a vacuum chamber through magnetic filtration cathode vacuum arc deposition, improves the plasma density, enables the element components and the content in the high-entropy alloy to be adjustable, and the prepared high-entropy coating has good tribology, corrosiveness and oxidation resistance; the ionization rate of the deposited particles after magnetic filtration is nearly 100%, large particles are not generated, and the formed film is compact, flat and smooth, good in corrosion resistance and good in combination with a machine body; can prepare various element films; the film thickness can be controlled to be in the nanometer level to obtain a nanometer multilayer film; the design of the monobasic metal coating, the dibasic metal coating, the quaternary metal coating and the high-entropy coating is combined, so that the problems that the high-entropy coating prepared by the traditional technology has large internal stress and is difficult to realize flexibility are avoided.

Description

一种柔性高熵合金涂层及其制备方法和应用A flexible high-entropy alloy coating and its preparation method and application

技术领域Technical field

本发明涉及高熵合金技术领域,尤其涉及一种柔性高熵合金涂层及其制备方法和应用。The invention relates to the technical field of high-entropy alloys, and in particular to a flexible high-entropy alloy coating and its preparation method and application.

背景技术Background technique

一般高熵合金制备方法包括烧结法、激光熔覆法和磁控溅射法。在对膜层致密性、缺陷等要求不高的情况下烧结法和激光熔覆可以实现高熵合金的制备;但随着对膜层质量和缺陷越来越关注,激光熔覆和烧结法已不能适用。磁控溅射方法是近几年最多用来制备高熵合金薄膜的方法,但其也存在着致命缺陷,磁控溅射的靶材本身的制备是一个难点,靶材制备难度大、成本极高;靶材制备好后膜层的元素成分很难实现调控,不利于膜层的多样化制备。General high-entropy alloy preparation methods include sintering, laser cladding and magnetron sputtering. Sintering methods and laser cladding can achieve the preparation of high-entropy alloys when the requirements for film layer density and defects are not high; however, with increasing attention to film layer quality and defects, laser cladding and sintering methods have Not applicable. The magnetron sputtering method is the most commonly used method to prepare high-entropy alloy films in recent years, but it also has fatal flaws. The preparation of the magnetron sputtering target itself is a difficulty. The target preparation is difficult and extremely costly. High; it is difficult to control the elemental composition of the film layer after the target is prepared, which is not conducive to the diversified preparation of the film layer.

一般传统技术制备的高熵合金涂层内应力大,很难实现柔性。Generally, high-entropy alloy coatings prepared by traditional technology have large internal stress and are difficult to achieve flexibility.

发明内容Contents of the invention

有鉴于此,本发明的目的在于提供一种柔性高熵合金涂层及其制备方法和应用。本发明制得的柔性高熵合金涂层内应力小,柔性佳。In view of this, the object of the present invention is to provide a flexible high-entropy alloy coating and its preparation method and application. The flexible high-entropy alloy coating prepared by the invention has small internal stress and good flexibility.

为了实现上述发明目的,本发明提供以下技术方案:In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

本发明提供了一种柔性高熵合金涂层的制备方法,包括以下步骤:The invention provides a method for preparing a flexible high-entropy alloy coating, which includes the following steps:

在一元金属涂层的表面进行磁过滤阴极真空弧沉积,依次形成二元金属涂层、四元金属涂层和高熵涂层,所述高熵涂层中元素种类不低于5种,每种元素的原子含量独立地为8~30%。Magnetic filter cathode vacuum arc deposition is performed on the surface of the unary metal coating to sequentially form a binary metal coating, a quaternary metal coating and a high-entropy coating. There are no less than 5 types of elements in the high-entropy coating. The atomic content of each element is independently 8 to 30%.

优选地,所述高熵涂层的厚度为1~10μm。Preferably, the thickness of the high-entropy coating is 1 to 10 μm.

优选地,所述高熵涂层中元素包括Ti、Cr、Co、Mo、Y、Ni、Au、Ag、Cu和Al的五种以上。Preferably, the elements in the high-entropy coating include at least five types of Ti, Cr, Co, Mo, Y, Ni, Au, Ag, Cu and Al.

优选地,所述一元金属涂层为Ni金属层或者Cr金属层。Preferably, the one-element metal coating is a Ni metal layer or a Cr metal layer.

优选地,所述一元金属涂层的厚度不高于所述柔性高熵合金涂层厚度的1/20。Preferably, the thickness of the one-element metal coating is no higher than 1/20 of the thickness of the flexible high-entropy alloy coating.

优选地,所述二元金属涂层为Cu-Ag金属层或Ni-Au金属层。Preferably, the binary metal coating is a Cu-Ag metal layer or a Ni-Au metal layer.

优选地,所述二元金属涂层的厚度不高于所述柔性高熵合金涂层厚度的1/30。Preferably, the thickness of the binary metal coating is no higher than 1/30 of the thickness of the flexible high-entropy alloy coating.

优选地,所述四元金属涂层为Cu-Ag-Mo-Y金属层或Ni-Au-Cr-Al金属层。Preferably, the quaternary metal coating is a Cu-Ag-Mo-Y metal layer or a Ni-Au-Cr-Al metal layer.

本发明还提供了上述技术方案所述的柔性高熵合金涂层,包括依次层叠设置的一元金属涂层、二元金属涂层、四元金属涂层和高熵涂层。The present invention also provides the flexible high-entropy alloy coating described in the above technical solution, including a one-element metal coating, a binary metal coating, a quaternary metal coating and a high-entropy coating that are stacked in sequence.

本发明还提供了上述技术方案所述的柔性高熵合金涂层在航空航天和电子通讯领域中的应用。The present invention also provides the application of the flexible high-entropy alloy coating described in the above technical solution in the fields of aerospace and electronic communications.

本发明提供了一种柔性高熵合金涂层的制备方法,包括以下步骤:在一元金属涂层的表面进行磁过滤阴极真空弧沉积,依次形成二元金属涂层、四元金属涂层和高熵涂层,所述高熵涂层中元素种类不低于5种,每种元素的原子含量独立地为8~30%。The invention provides a method for preparing a flexible high-entropy alloy coating, which includes the following steps: performing magnetic filtering cathode vacuum arc deposition on the surface of a one-element metal coating, and sequentially forming a binary metal coating, a quaternary metal coating and a high-entropy alloy coating. Entropy coating, there are no less than 5 types of elements in the high-entropy coating, and the atomic content of each element is independently 8 to 30%.

本发明通过磁过滤阴极真空弧沉积,改变真空室的空间布局以及电势分布,提高等离子体密度,使高熵合金中元素成分可调及含量可调,制备的高熵涂层具备良好摩擦学、腐蚀学及抗氧化性能,所述高熵涂层为无定形相结构形成,促进内应力的释放,达到柔性的目;磁过滤后沉积粒子的离化率接近为100%,没有大颗粒,形成的薄膜致密、平整光滑,抗腐蚀性能好,且与机体的结合良好;能够制备多种元素薄膜;能够控制膜厚在纳米量级得到纳米多层膜;结合对一元金属涂层、二元金属涂层、四元金属涂层和高熵涂层的设计,避免了传统技术制备的高熵涂层内应力大,很难实现柔性的问题。The present invention uses magnetic filter cathode vacuum arc deposition to change the spatial layout and potential distribution of the vacuum chamber, increase the plasma density, and make the element composition and content of the high-entropy alloy adjustable. The prepared high-entropy coating has good tribology, Corrosion and anti-oxidation properties, the high-entropy coating is formed into an amorphous phase structure, which promotes the release of internal stress and achieves flexibility; the ionization rate of deposited particles after magnetic filtration is close to 100%, and there are no large particles to form The film is dense, flat and smooth, has good corrosion resistance, and is well integrated with the body; it can prepare a variety of element films; it can control the film thickness at the nanometer level to obtain nanometer multi-layer films; it can combine with one-element metal coatings, binary metals The design of coatings, quaternary metal coatings and high-entropy coatings avoids the problem that high-entropy coatings prepared by traditional technology have large internal stress and are difficult to achieve flexibility.

进一步的,所述一元金属涂层中Ni和Cr金属元素韧性强,厚度在10~50nm时表现出优异的耐折性能,Ni或Cr沉积大于50nm,纳米晶尺寸过大,晶体尺寸过大会影响耐折特性;过薄无法起到过渡效果。Furthermore, the Ni and Cr metal elements in the one-element metal coating have strong toughness, and show excellent folding resistance when the thickness is 10 to 50nm. Ni or Cr deposition is greater than 50nm, and the nanocrystal size is too large, and the crystal size is too large. Folding resistance; too thin to achieve a transition effect.

进一步的,所述二元金属涂层选为Cu-Ag或者Ni-Au,这是依据四元金属涂层的成分以及一元金属涂层进行选定的,选定标准为结合强度强,元素兼容性好为主;同时一元金属涂层沉积能够诱导二元金属涂层成相结构为耐折相,二元金属涂层诱导四元金属涂层形成耐折相,耐折相以纳米晶尺寸越小越好直至形成非晶相。Further, the binary metal coating is selected as Cu-Ag or Ni-Au, which is selected based on the composition of the quaternary metal coating and the one-element metal coating. The selection criteria are strong bonding strength and element compatibility. The main reason is good resistance; at the same time, the deposition of the one-element metal coating can induce the phase structure of the binary metal coating to be a fold-resistant phase, and the binary metal coating induces the quaternary metal coating to form a fold-resistant phase, and the fold-resistant phase is larger than the nanocrystal size. Smaller is better until an amorphous phase is formed.

进一步的,所述四元金属涂层为应力释放层,应力释放层为不高于整体厚度的1/10;四元金属涂层中至少两个金属是互不相容的,不容的金属容易形成单质相,提高耐折能力。Further, the quaternary metal coating is a stress release layer, and the stress release layer is no more than 1/10 of the overall thickness; at least two metals in the quaternary metal coating are incompatible with each other, and incompatible metals are easily Form a single phase and improve the folding resistance.

本发明还提供了上述技术方案所述制备方法制得的柔性高熵合金涂层,本发明的柔性高熵合金涂层内应力小,柔性佳。The present invention also provides a flexible high-entropy alloy coating prepared by the preparation method described in the above technical solution. The flexible high-entropy alloy coating of the present invention has small internal stress and good flexibility.

附图说明Description of the drawings

图1为实施例1~4的涂层的结合强度图;Figure 1 is a diagram of the bonding strength of the coatings of Examples 1 to 4;

图2为实施例1~4的涂层的内应力图;Figure 2 is the internal stress diagram of the coating of Examples 1 to 4;

图3为实施例1~4的涂层的耐折次数图;Figure 3 is a graph showing the folding endurance of the coatings of Examples 1 to 4;

图4为实施例1~4的涂层在有氧环境下、600℃保温30min得到的氧化层深度图;Figure 4 is a diagram of the depth of the oxide layer obtained by holding the coatings of Examples 1 to 4 at 600°C for 30 minutes in an aerobic environment;

图5为真空室空间结构示意图,其中101为脉冲偏压接入端口,102为分子泵,103为斜面法兰,104为1号磁过滤系统及磁场系统,105为2号磁过滤系统及磁场系统,106为1号引出磁场系统,107为1号磁场抑制颗粒控制系统,108为1号阴极靶,109为2号引出磁场系统,110为2号磁场抑制颗粒控制系统,111为2号阴极靶,112为3号磁场抑制颗粒控制系统,113为3号引出磁场系统,114为3号阴极靶,115为4号阴极靶,116为4号磁场抑制颗粒控制系统,117为4号引出磁场系统,118为3号磁过滤系统及磁场系统,119为4号磁过滤系统及磁场系统,120为分子泵,121为真空室,122为台架。Figure 5 is a schematic diagram of the space structure of the vacuum chamber, in which 101 is the pulse bias access port, 102 is the molecular pump, 103 is the bevel flange, 104 is the No. 1 magnetic filtration system and magnetic field system, and 105 is the No. 2 magnetic filtration system and magnetic field. System, 106 is the magnetic field extraction system No. 1, 107 is the magnetic field suppression particle control system No. 1, 108 is the cathode target No. 1, 109 is the magnetic field extraction system No. 2, 110 is the magnetic field suppression particle control system No. 2, and 111 is the cathode No. 2 Target, 112 is the No. 3 magnetic field suppression particle control system, 113 is the No. 3 extraction magnetic field system, 114 is the No. 3 cathode target, 115 is the No. 4 cathode target, 116 is the No. 4 magnetic field suppression particle control system, and 117 is the No. 4 extraction magnetic field. System, 118 is the No. 3 magnetic filtration system and magnetic field system, 119 is the No. 4 magnetic filtration system and magnetic field system, 120 is the molecular pump, 121 is the vacuum chamber, and 122 is the bench.

具体实施方式Detailed ways

本发明提供了一种柔性高熵合金涂层的制备方法,包括以下步骤:The invention provides a method for preparing a flexible high-entropy alloy coating, which includes the following steps:

在一元金属涂层的表面进行磁过滤阴极真空弧沉积,依次形成二元金属涂层、四元金属涂层和高熵涂层,所述高熵涂层中元素种类不低于5种,每种元素的原子含量独立地为8~30%,优选为10~25%。Magnetic filter cathode vacuum arc deposition is performed on the surface of the unary metal coating to sequentially form a binary metal coating, a quaternary metal coating and a high-entropy coating. There are no less than 5 types of elements in the high-entropy coating. The atomic content of each element is independently 8 to 30%, preferably 10 to 25%.

在本发明中,所述高熵涂层的厚度优选为1~10μm,更优选为2~6μm。In the present invention, the thickness of the high-entropy coating is preferably 1 to 10 μm, and more preferably 2 to 6 μm.

在本发明中,所述高熵涂层中元素优选包括Ti、Cr、Co、Mo、Y、Ni、Au、Ag、Cu和Al的五种以上,更优选为MoYNiAgCu涂层或MoNiYAgCu涂层,膜层折叠韧性大于5000次不开裂。In the present invention, the elements in the high-entropy coating preferably include more than five types of Ti, Cr, Co, Mo, Y, Ni, Au, Ag, Cu and Al, and more preferably a MoYNiAgCu coating or a MoNiYAgCu coating. The folding toughness of the film layer is greater than 5,000 times without cracking.

在本发明中,所述高熵涂层由无定形相结构形成,促进内应力的释放,达到柔性的目标。In the present invention, the high-entropy coating is formed from an amorphous phase structure, which promotes the release of internal stress and achieves the goal of flexibility.

在本发明中,沉积所述高熵涂层时磁过滤阴极真空弧沉积的负压优选为10~50kV,占空比优选为1~4%,负压在10~50kV能大幅提高无定形相结构形成,进一步促进内应力的释放,进一步达到柔性的目标,占空比为1~4%,避免多元元素在超过4%占空比下容易促进合金相形成,影响耐折性能的问题。In the present invention, when depositing the high-entropy coating, the negative pressure of the magnetic filter cathode vacuum arc deposition is preferably 10 to 50 kV, and the duty cycle is preferably 1 to 4%. The negative pressure of 10 to 50 kV can greatly increase the amorphous phase. The structure is formed to further promote the release of internal stress and further achieve the goal of flexibility. The duty cycle is 1 to 4% to avoid the problem that multi-element elements easily promote the formation of alloy phases and affect the folding resistance when the duty cycle exceeds 4%.

在本发明中,沉积所述高熵涂层时各个磁过滤引出系统与工件法线夹角优选为40-60°,四个引出系统出口方向磁场优选依次为N,S,N,S,相邻两个出口磁场优选相反,同时使用时单个引出的等离子体浓度优选大于单独使用的磁过滤系统的20%,整体膜层的沉积速率优选不低于5μm/h。In the present invention, when depositing the high-entropy coating, the angle between each magnetic filter extraction system and the normal line of the workpiece is preferably 40-60°, and the magnetic fields in the exit directions of the four extraction systems are preferably N, S, N, S in sequence. The magnetic fields of the two adjacent outlets are preferably opposite. When used simultaneously, the concentration of a single induced plasma is preferably greater than 20% of that of the magnetic filtration system used alone. The deposition rate of the overall film layer is preferably not less than 5 μm/h.

在本发明中,沉积所述高熵涂层时的磁过滤阴极真空弧沉积包括抑制颗粒磁场、引出磁场、磁过滤磁场,所述抑制颗粒磁场磁场优选为高频磁场,所述高频磁场的电流优选为0~100A,频率优选为100~1kHz;所述引出磁场优选为直流磁场,所述直流磁场的电流优选为0~5A;所述磁过滤磁场为高频磁场,电流优选为0~2A,频率优选为1~10KH。In the present invention, the magnetic filter cathode vacuum arc deposition when depositing the high-entropy coating includes suppressing the particle magnetic field, extracting the magnetic field, and magnetic filtering magnetic field. The suppressing particle magnetic field is preferably a high-frequency magnetic field, and the high-frequency magnetic field is The current is preferably 0-100A, and the frequency is preferably 100-1kHz; the extraction magnetic field is preferably a DC magnetic field, and the current of the DC magnetic field is preferably 0-5A; the magnetic filtering magnetic field is a high-frequency magnetic field, and the current is preferably 0-5A. 2A, the frequency is preferably 1~10KH.

在本发明中,沉积所述高熵涂层时磁过滤阴极真空弧沉积引出的等离子体密度更高,膜层致密性好,通过形貌表征,孔洞等缺陷少。In the present invention, when depositing the high-entropy coating, the plasma density induced by magnetic filter cathode vacuum arc deposition is higher, the film layer has good density, is characterized by morphology, and has fewer defects such as holes.

在本发明中,沉积所述高熵涂层时的磁过滤阴极真空弧沉积的每个阴极靶起弧电流优选为20~180A,优选连续可调,电压优选为20~30V。In the present invention, the arcing current of each cathode target of magnetic filter cathode vacuum arc deposition when depositing the high-entropy coating is preferably 20 to 180 A, preferably continuously adjustable, and the voltage is preferably 20 to 30 V.

在本发明中,所述一元金属涂层优选为Ni金属层或者Cr金属层,膜层折叠韧性大于5000次不开裂。In the present invention, the one-element metal coating is preferably a Ni metal layer or a Cr metal layer, and the folding toughness of the film layer is greater than 5000 times without cracking.

在本发明中,所述一元金属涂层的厚度优选不高于所述柔性高熵合金涂层厚度的1/20。In the present invention, the thickness of the one-element metal coating is preferably no higher than 1/20 of the thickness of the flexible high-entropy alloy coating.

在本发明的具体实施例中,所述一元金属涂层的厚度优选为10~50nm,所述Ni和Cr金属元素韧性强,厚度在10~50nm时表现出优异的耐折性能,Ni或Cr沉积大于50nm,纳米晶尺寸过大,晶体尺寸过大会影响耐折特性,过薄无法起到过渡效果。In specific embodiments of the present invention, the thickness of the one-element metal coating is preferably 10 to 50 nm. The Ni and Cr metal elements have strong toughness and exhibit excellent folding resistance when the thickness is 10 to 50 nm. Ni or Cr If the deposition is greater than 50nm, the size of the nanocrystals will be too large. Excessive crystal size will affect the folding resistance, and too thin will not have a transition effect.

本发明优选进行磁过滤阴极真空弧沉积形成所述一元金属涂层。In the present invention, magnetic filter cathode vacuum arc deposition is preferably performed to form the one-element metal coating.

在本发明中,所述磁过滤阴极真空弧沉积时的负压优选为800V,占空比优选为20~50%。In the present invention, the negative pressure during vacuum arc deposition of the magnetic filter cathode is preferably 800V, and the duty cycle is preferably 20 to 50%.

在本发明中,所述二元金属涂层优选为Cu-Ag金属层或Ni-Au金属层。In the present invention, the binary metal coating is preferably a Cu-Ag metal layer or a Ni-Au metal layer.

在本发明中,所述二元金属涂层的厚度优选不高于所述柔性高熵合金涂层厚度的1/30。In the present invention, the thickness of the binary metal coating is preferably no higher than 1/30 of the thickness of the flexible high-entropy alloy coating.

在本发明的具体实施例中,所述二元金属涂层的厚度优选为20~30nm,所述二元金属涂层为无定形相,无合金相,所述二元金属涂层选为Cu-Ag或者Ni-Au,膜层折叠韧性大于5000次不开裂,这是依据四元金属涂层的成分以及一元金属涂层进行选定的,选定标准为结合强度强,元素兼容性好为主;同时一元金属涂层沉积能够诱导二元金属涂层成相结构为耐折相,二元金属涂层诱导四元金属涂层形成耐折相,耐折相以纳米晶尺寸越小越好直至形成非晶相。In specific embodiments of the present invention, the thickness of the binary metal coating is preferably 20 to 30 nm. The binary metal coating is an amorphous phase and has no alloy phase. The binary metal coating is selected from Cu -Ag or Ni-Au, the folding toughness of the film is greater than 5000 times without cracking. This is selected based on the composition of the quaternary metal coating and the one-element metal coating. The selection criteria are strong bonding strength and good element compatibility. Mainly; at the same time, the deposition of a one-element metal coating can induce the phase structure of the binary metal coating to be a fold-resistant phase, and the binary metal coating induces a quaternary metal coating to form a fold-resistant phase. The smaller the nanocrystal size, the better. until the amorphous phase is formed.

在本发明中,沉积所述二元金属涂层时磁过滤阴极真空弧沉积的负压优选为10~50kV,占空比优选为5~10%,沉积时优选选择一个阴极弧或者两个阴极弧进行,高的负压设置能够提供足够的能量,促使精细纳米晶及非晶相的形成,同时促进微区热峰效应的产生,同时释放内应力,使得内应力小于100MPa;过高占空比会引起涂层温度的骤升,使得晶粒发生长大。In the present invention, when depositing the binary metal coating, the negative pressure of the magnetic filter cathode vacuum arc deposition is preferably 10 to 50 kV, and the duty cycle is preferably 5 to 10%. During deposition, one cathode arc or two cathodes are preferably selected. The arc is carried out, and the high negative pressure setting can provide enough energy to promote the formation of fine nanocrystals and amorphous phases, and at the same time promote the generation of micro-area thermal peak effects, and at the same time release the internal stress, making the internal stress less than 100MPa; too high duty cycle The ratio will cause the coating temperature to rise suddenly, causing the grains to grow.

在本发明中,所述四元金属涂层优选为Cu-Ag-Mo-Y金属层或Ni-Au-Cr-Al金属层,所述四元金属涂层为无定形相,无合金相;所述Cu-Ag-Mo-Y金属层中Cu的原子含量优选为40%~60%,Ag的原子含量优选为20%~35%,Mo的原子含量优选为5%~15%,Y的原子含量优选为3%~9%;所述Ni-Au-Cr-Al金属层中Ni的原子含量优选为20%~60%,Au的原子含量优选为10%~15%,Cr的原子含量优选为20%~50%,Al的原子含量优选为10%~15%。In the present invention, the quaternary metal coating is preferably a Cu-Ag-Mo-Y metal layer or a Ni-Au-Cr-Al metal layer, and the quaternary metal coating is an amorphous phase and has no alloy phase; The atomic content of Cu in the Cu-Ag-Mo-Y metal layer is preferably 40% to 60%, the atomic content of Ag is preferably 20% to 35%, the atomic content of Mo is preferably 5% to 15%, and the atomic content of Y is preferably 5% to 15%. The atomic content is preferably 3% to 9%; the atomic content of Ni in the Ni-Au-Cr-Al metal layer is preferably 20% to 60%, the atomic content of Au is preferably 10% to 15%, and the atomic content of Cr is preferably 20% to 60%. It is preferably 20% to 50%, and the atomic content of Al is preferably 10% to 15%.

在本发明的具体实施例中,所述四元金属涂层的厚度优选为100~200nm。In specific embodiments of the present invention, the thickness of the quaternary metal coating is preferably 100 to 200 nm.

在本发明中,所述四元金属涂层为应力释放层,所述四元金属涂层中至少两个金属是互不相容的,不容的金属容易形成单质相,提高耐折能力;膜层折叠韧性大于5000次不开裂。In the present invention, the quaternary metal coating is a stress release layer, and at least two metals in the quaternary metal coating are incompatible with each other. Incompatible metals can easily form a single phase, thereby improving the folding endurance; the film The layer folding toughness is greater than 5,000 times without cracking.

在本发明中,所述四元金属涂层的厚度优选不高于所述柔性高熵合金涂层厚度的1/10。In the present invention, the thickness of the quaternary metal coating is preferably no higher than 1/10 of the thickness of the flexible high-entropy alloy coating.

在本发明中,沉积所述四元金属涂层时磁过滤阴极真空弧沉积的负压优选为10~50kV,占空比优选为5~10%,控制整体膜层温度优选为室温~150℃,沉积时优选选择两个或者三个阴极弧共沉积。In the present invention, when depositing the quaternary metal coating, the negative pressure of the magnetic filter cathode vacuum arc deposition is preferably 10 to 50 kV, the duty cycle is preferably 5 to 10%, and the overall film temperature is preferably controlled to be room temperature to 150°C. , it is preferred to choose two or three cathode arc co-depositions during deposition.

本发明在高功率偏压加速作用下高密度的离子束流冲击待沉积基体表面,改变待沉积基体表面结构,获得化学键结合界面,有效改善了膜基界面结合状况;同时由于多个阴极弧共同沉积,空间布局更加紧凑,因此沉积速率大大提高,同时提高制备效率和可调控的范围如元素范围和含量范围;空间布局以及沉积的高功率脉冲偏压系统,离子的能量大大提高,在工件表面的迁移能力也大幅提高,能够使异型工件能够实现均匀的镀膜。In the present invention, under the action of high-power bias acceleration, a high-density ion beam impacts the surface of the substrate to be deposited, changes the surface structure of the substrate to be deposited, obtains a chemical bonding interface, and effectively improves the bonding condition of the film-base interface; at the same time, due to the joint operation of multiple cathode arcs Deposition, the spatial layout is more compact, so the deposition rate is greatly improved, while the preparation efficiency and the controllable range such as the element range and content range are improved; the spatial layout and the deposition of high-power pulse bias system greatly increase the energy of ions on the workpiece surface. The migration ability is also greatly improved, enabling uniform coating of special-shaped workpieces.

在本发明中,所述磁过滤阴极真空弧沉积的装置优选由真空系统、高功率脉冲磁场系统、真空阴极弧沉积系统及其控制系统所构成,所述真空系统的真空室空间布局如图5所示,其中101为脉冲偏压接入端口,102为分子泵,103为斜面法兰,104为1号磁过滤系统及磁场系统,105为2号磁过滤系统及磁场系统,106为1号引出磁场系统,107为1号磁场抑制颗粒控制系统,108为1号阴极靶,109为2号引出磁场系统,110为2号磁场抑制颗粒控制系统,111为2号阴极靶,112为3号磁场抑制颗粒控制系统,113为3号引出磁场系统,114为3号阴极靶,115为4号阴极靶,116为4号磁场抑制颗粒控制系统,117为4号引出磁场系统,118为3号磁过滤系统及磁场系统,119为4号磁过滤系统及磁场系统,120为分子泵,121为真空室,122为台架。In the present invention, the device for magnetic filtering cathode vacuum arc deposition is preferably composed of a vacuum system, a high-power pulsed magnetic field system, a vacuum cathode arc deposition system and its control system. The vacuum chamber space layout of the vacuum system is shown in Figure 5 As shown, 101 is the pulse bias access port, 102 is the molecular pump, 103 is the bevel flange, 104 is the No. 1 magnetic filtration system and magnetic field system, 105 is the No. 2 magnetic filtration system and magnetic field system, and 106 is No. 1 Extract magnetic field system, 107 is the No. 1 magnetic field suppression particle control system, 108 is the No. 1 cathode target, 109 is the No. 2 extraction magnetic field system, 110 is the No. 2 magnetic field suppression particle control system, 111 is the No. 2 cathode target, and 112 is the No. 3 Magnetic field suppression particle control system, 113 is the magnetic field extraction system No. 3, 114 is the cathode target No. 3, 115 is the cathode target No. 4, 116 is the magnetic field suppression particle control system No. 4, 117 is the magnetic field extraction system No. 4, 118 is No. 3 Magnetic filtration system and magnetic field system, 119 is the No. 4 magnetic filtration system and magnetic field system, 120 is the molecular pump, 121 is the vacuum chamber, and 122 is the bench.

本发明还提供了上述技术方案所述的柔性高熵合金涂层,包括依次层叠设置的一元金属涂层、二元金属涂层、四元金属涂层和高熵涂层。The present invention also provides the flexible high-entropy alloy coating described in the above technical solution, including a one-element metal coating, a binary metal coating, a quaternary metal coating and a high-entropy coating that are stacked in sequence.

在本发明中,所述柔性高熵合金涂层硬度优选为10~20Gpa,内应力优选为0~50MPa,600℃温度下30min氧化层的厚度优选为0~50nm,5%质量浓度HF下测试的耐腐蚀电流比304不锈钢腐蚀电流小两个数量级。In the present invention, the hardness of the flexible high-entropy alloy coating is preferably 10 to 20 Gpa, the internal stress is preferably 0 to 50 MPa, and the thickness of the oxide layer at 600°C for 30 minutes is preferably 0 to 50 nm, tested under 5% mass concentration HF The corrosion resistance current is two orders of magnitude smaller than the corrosion current of 304 stainless steel.

本发明还提供了上述技术方案所述的柔性高熵合金涂层在航空航天和电子通讯领域中的应用。The present invention also provides the application of the flexible high-entropy alloy coating described in the above technical solution in the fields of aerospace and electronic communications.

为了进一步说明本发明,下面结合实例对本发明提供的柔性高熵合金涂层及其制备方法和应用进行详细地描述,但不能将它们理解为对本发明保护范围的限定。In order to further illustrate the present invention, the flexible high-entropy alloy coating provided by the present invention and its preparation method and application are described in detail below with reference to examples, but they should not be understood as limiting the protection scope of the present invention.

实施例1Example 1

1)无沉积一元金属层1) No deposited one-element metal layer

2)无沉积二元金属层2) No deposited binary metal layer

3)四元金属层为Cu-Ag-Mo-Y四元金属层(原子含量为Cu48%Ag32%Mo14%Y6%),沉积时负压为50kV,占空比为5%,沉积厚度为200nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率100Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为1kH;3) The quaternary metal layer is Cu-Ag-Mo-Y quaternary metal layer (atomic content is Cu48%Ag32%Mo14%Y6%). During deposition, the negative pressure is 50kV, the duty cycle is 5%, and the deposition thickness is 200nm. ; The magnetic field that suppresses the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 100Hz; the extracted magnetic field is a DC magnetic field, and the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 1kH;

4)高熵涂层为MoYNiAgCu(原子含量为Mo12%Y5%Ni17%Ag21%Cu45%),Mo,NiY,Ag和铜选择四个阴极弧共同沉积,沉积时负压为10kV,占空比为4%;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率1kHz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz,沉积厚度为5μm。4) The high-entropy coating is MoYNiAgCu (atomic content is Mo12%Y5%Ni17%Ag21%Cu45%). Mo, NiY, Ag and copper are deposited together with four cathode arcs. During deposition, the negative pressure is 10kV and the duty cycle is 4%; the magnetic field that suppresses the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 1kHz; the extracted magnetic field is a DC magnetic field, and the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz. The deposition thickness is 5 μm.

实施例2Example 2

1)一元金属层为Ni金属层,沉积时负压为800V,占空比为50%,沉积厚度为50nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率100Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;1) The one-element metal layer is a Ni metal layer, the negative pressure during deposition is 800V, the duty cycle is 50%, and the deposition thickness is 50nm; the magnetic field to suppress the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 100Hz; the magnetic field is extracted It is a DC magnetic field, and the magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz;

2)二元金属层为Cu-Ag二元金属层(原子含量为Cu75%Ag25%),沉积时负压为50kV,占空比为10%,沉积厚度为100nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率1kHz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;2) The binary metal layer is a Cu-Ag binary metal layer (atomic content is Cu75%Ag25%). During deposition, the negative pressure is 50kV, the duty cycle is 10%, and the deposition thickness is 100nm; the magnetic field that suppresses the particle magnetic field is high frequency. Magnetic field, high-frequency magnetic field current is 100A, frequency 1kHz; extracted magnetic field is DC magnetic field, extracted magnetic field current is 5A; magnetic filter magnetic field is high-frequency magnetic field, current is 2A, frequency is 10kHz;

3)四元金属层为Cu-Ag-Mo-Y四元金属层(原子含量为Cu48%Ag32%Mo14%Y6%),沉积时负压为50kV,占空比为5%,沉积厚度为200nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率1kHz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;3) The quaternary metal layer is Cu-Ag-Mo-Y quaternary metal layer (atomic content is Cu48%Ag32%Mo14%Y6%). During deposition, the negative pressure is 50kV, the duty cycle is 5%, and the deposition thickness is 200nm. ; The magnetic field that suppresses the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 1kHz; the extracted magnetic field is a DC magnetic field, and the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz;

4)高熵涂层为MoYNiAgCu(原子含量为Mo12%Y5%Ni17%Ag21%Cu45%),选择四个阴极弧共同沉积,沉积时负压为10kV,占空比为1%;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率1kHz;引出磁场为直流磁场,引出磁场电流为2A;磁过滤磁场为高频磁场,电流为2A,频率为10KHz,沉积厚度为5μm。4) The high-entropy coating is MoYNiAgCu (atomic content is Mo12%Y5%Ni17%Ag21%Cu45%). Four cathode arcs are selected to be co-deposited. During deposition, the negative pressure is 10kV and the duty cycle is 1%; suppress the particle magnetic field. It is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, the frequency is 1kHz; the extracted magnetic field is a DC magnetic field, the extracted magnetic field current is 2A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, the frequency is 10KHz, and the deposition thickness is 5μm.

实施例3Example 3

1)一元金属层为Ni金属层,沉积时负压为800V,占空比为20%,沉积厚度为50nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率100Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;1) The one-element metal layer is a Ni metal layer, the negative pressure during deposition is 800V, the duty cycle is 20%, and the deposition thickness is 50nm; the magnetic field to suppress the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 100Hz; the magnetic field is extracted It is a DC magnetic field, and the magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz;

2)二元金属层为Cu-Ag二元金属层(原子含量为Cu75%Ag25%),沉积时负压为50kV,占空比为5%,沉积厚度为100nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率500Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;2) The binary metal layer is a Cu-Ag binary metal layer (atomic content is Cu75%Ag25%). During deposition, the negative pressure is 50kV, the duty cycle is 5%, and the deposition thickness is 100nm; the magnetic field that suppresses the particle magnetic field is high frequency. The magnetic field, the high-frequency magnetic field current is 100A, the frequency is 500Hz; the extracted magnetic field is a DC magnetic field, the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz;

3)四元金属层为Cu-Ag-Mo-Y四元金属层(原子含量为Cu48%Ag32%Mo14%Y6%),沉积时负压为50kV,占空比为10%,沉积厚度为200nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率500Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为5kHz;3) The quaternary metal layer is Cu-Ag-Mo-Y quaternary metal layer (atomic content is Cu48%Ag32%Mo14%Y6%). During deposition, the negative pressure is 50kV, the duty cycle is 10%, and the deposition thickness is 200nm. ; The magnetic field that suppresses the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 500Hz; the extracted magnetic field is a DC magnetic field, and the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 5kHz;

4)高熵涂层为MoYNiAgCu(原子含量为Mo12%Y5%Ni17%Ag21%Cu45%),选择四个阴极弧共同沉积,沉积时负压为20kV,占空比为4%;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率1kHz;引出磁场为直流磁场,引出磁场电流为2A;磁过滤磁场为高频磁场,电流为2A,频率为10KHz,沉积厚度为5μm。4) The high-entropy coating is MoYNiAgCu (atomic content is Mo12%Y5%Ni17%Ag21%Cu45%). Four cathode arcs are selected for co-deposition. During deposition, the negative pressure is 20kV and the duty cycle is 4%; suppress the particle magnetic field. It is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, the frequency is 1kHz; the extracted magnetic field is a DC magnetic field, the extracted magnetic field current is 2A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, the frequency is 10KHz, and the deposition thickness is 5μm.

实施例4Example 4

1)一元金属层为Ni金属层,沉积时负压为800V,占空比为30%,沉积厚度为50nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率100Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;1) The one-element metal layer is a Ni metal layer, the negative pressure during deposition is 800V, the duty cycle is 30%, and the deposition thickness is 50nm; the magnetic field to suppress the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 100Hz; the magnetic field is extracted It is a DC magnetic field, and the magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz;

2)二元金属层为Cu-Ag二元金属层(原子含量为Cu75%Ag25%),沉积时负压为30kV,占空比为8%,沉积厚度为100nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率500Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为10kHz;2) The binary metal layer is a Cu-Ag binary metal layer (atomic content is Cu75%Ag25%). During deposition, the negative pressure is 30kV, the duty cycle is 8%, and the deposition thickness is 100nm; the magnetic field that suppresses the particle magnetic field is high frequency. The magnetic field, the high-frequency magnetic field current is 100A, the frequency is 500Hz; the extracted magnetic field is a DC magnetic field, the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 10kHz;

3)四元金属层为Cu-Ag-Mo-Y四元金属层(原子含量为Cu48%Ag32%Mo14%Y6%),沉积时负压为10kV,占空比为10%,沉积厚度为200nm;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率500Hz;引出磁场为直流磁场,引出磁场电流为5A;磁过滤磁场为高频磁场,电流为2A,频率为5kHz;3) The quaternary metal layer is Cu-Ag-Mo-Y quaternary metal layer (atomic content is Cu48%Ag32%Mo14%Y6%). During deposition, the negative pressure is 10kV, the duty cycle is 10%, and the deposition thickness is 200nm. ; The magnetic field that suppresses the particle magnetic field is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, and the frequency is 500Hz; the extracted magnetic field is a DC magnetic field, and the extracted magnetic field current is 5A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, and the frequency is 5kHz;

4)高熵涂层为MoYNiAgCu(原子含量为Mo12%Y5%Ni17%Ag21%Cu45%),选择四个阴极弧共同沉积,沉积时负压为50kV,占空比为2%;抑制颗粒磁场磁场为高频磁场,高频磁场电流为100A,频率1kHz;引出磁场为直流磁场,引出磁场电流为2A;磁过滤磁场为高频磁场,电流为2A,频率为10KHz,沉积厚度为5μm。4) The high-entropy coating is MoYNiAgCu (atomic content is Mo12%Y5%Ni17%Ag21%Cu45%). Four cathode arcs are selected for co-deposition. During deposition, the negative pressure is 50kV and the duty cycle is 2%; suppress the particle magnetic field. It is a high-frequency magnetic field, the high-frequency magnetic field current is 100A, the frequency is 1kHz; the extracted magnetic field is a DC magnetic field, the extracted magnetic field current is 2A; the magnetic filtering magnetic field is a high-frequency magnetic field, the current is 2A, the frequency is 10KHz, and the deposition thickness is 5μm.

图1为实施例1~4的涂层的结合强度图,由图1可知,一元、二元、四元金属过渡层的存在可以极大提高结合强度,且沉积高熵涂层时,沉积负偏压越高,具有强的离子浅注入效应,因此结合强度越高。Figure 1 is a diagram of the bonding strength of the coatings of Examples 1 to 4. It can be seen from Figure 1 that the existence of one-element, two-element, and four-element metal transition layers can greatly improve the bonding strength, and when depositing a high-entropy coating, the deposition of negative The higher the bias voltage, the stronger the shallow ion implantation effect, and therefore the higher the bonding strength.

图2为实施例1~4的涂层的内应力图,由图2可知,高熵涂层沉积时,沉积负压越高,内应力越低,这是由于超高负偏压的可以形成高能粒子轰击,产生热峰效应等,有效降低膜层内应力。Figure 2 is a diagram of the internal stress of the coatings of Examples 1 to 4. It can be seen from Figure 2 that when the high-entropy coating is deposited, the higher the deposition negative pressure, the lower the internal stress. This is because ultra-high negative bias can form High-energy particle bombardment produces thermal peak effects, etc., which effectively reduces the internal stress of the film layer.

图3为实施例1~4的涂层的耐折次数图,测试标准为GB/T457-2002,由图3可知,涂层的结合强度越高,内应力越低,韧性就越好,耐弯折能力越高。Figure 3 is a graph showing the folding endurance of the coatings of Examples 1 to 4. The test standard is GB/T457-2002. It can be seen from Figure 3 that the higher the bonding strength of the coating, the lower the internal stress, the better the toughness and the resistance. The higher the bending ability.

在有氧环境下、600℃保温30min得到的氧化层深度图如图4所示,由图4可知,由磁过滤技术沉积的高熵薄膜均具有较高的抗高温氧化能力,但负偏压越高,高能离子轰击沉积作用越强,膜层中的缺陷越少,因此抗高温氧化性能越好。The oxide layer depth map obtained by holding the temperature at 600°C for 30 minutes in an aerobic environment is shown in Figure 4. It can be seen from Figure 4 that high-entropy films deposited by magnetic filtration technology have high resistance to high-temperature oxidation, but negative bias voltage The higher the value, the stronger the high-energy ion bombardment deposition effect, the fewer defects in the film layer, and therefore the better the high-temperature oxidation resistance.

以上所述仅是本发明的优选实施方式,并非对本发明作任何形式上的限制。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above descriptions are only preferred embodiments of the present invention and do not limit the present invention in any form. It should be pointed out that for those of ordinary skill in the art, several improvements and modifications can be made without departing from the principles of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims (10)

1. The preparation method of the flexible high-entropy alloy coating is characterized by comprising the following steps of:
and performing magnetic filtration cathode vacuum arc deposition on the surface of the monobasic metal coating to sequentially form a binary metal coating, a quaternary metal coating and a high-entropy coating, wherein the types of elements in the high-entropy coating are not less than 5, and the atomic content of each element is independently 8-30%.
2. The method of claim 1, wherein the high entropy coating has a thickness of 1 to 10 μm.
3. The method of claim 1 or 2, wherein the elements in the high entropy coating comprise five or more of Ti, cr, co, mo, Y, ni, au, ag, cu and Al.
4. The method of claim 1, wherein the single metal coating is a Ni metal layer or a Cr metal layer.
5. The method of claim 1 or 4, wherein the thickness of the monobasic metal coating is no greater than 1/20 of the thickness of the flexible high entropy alloy coating.
6. The method of claim 1, wherein the binary metal coating is a Cu-Ag metal layer or a Ni-Au metal layer.
7. The method of manufacturing according to claim 1 or 6, wherein the thickness of the binary metal coating is not higher than 1/30 of the thickness of the flexible high-entropy alloy coating.
8. The method of claim 1, wherein the quaternary metal coating is a Cu-Ag-Mo-Y metal layer or a Ni-Au-Cr-Al metal layer.
9. The flexible high-entropy alloy coating according to any one of claims 1 to 8, comprising a single-element metal coating, a dual-element metal coating, a quaternary metal coating and a high-entropy coating, which are sequentially stacked.
10. Use of the flexible high-entropy alloy coating of claim 9 in the fields of aerospace and electronic communication.
CN202310915367.5A 2023-07-25 2023-07-25 Flexible high-entropy alloy coating and preparation method and application thereof Pending CN116855888A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118222993A (en) * 2024-05-23 2024-06-21 顺束科技(天津)合伙企业(有限合伙) High-entropy alloy coating preparation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118222993A (en) * 2024-05-23 2024-06-21 顺束科技(天津)合伙企业(有限合伙) High-entropy alloy coating preparation device

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