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CN116844939B - 用于半导体工件的低压氧化处理方法和装置 - Google Patents

用于半导体工件的低压氧化处理方法和装置 Download PDF

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CN116844939B
CN116844939B CN202310826140.3A CN202310826140A CN116844939B CN 116844939 B CN116844939 B CN 116844939B CN 202310826140 A CN202310826140 A CN 202310826140A CN 116844939 B CN116844939 B CN 116844939B
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CN116844939A (zh
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冀建民
么曼实
李海卫
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Beijing E Town Semiconductor Technology Co Ltd
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Beijing E Town Semiconductor Technology Co Ltd
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Priority to JP2024097344A priority patent/JP2025009917A/ja
Priority to US18/744,978 priority patent/US20250014892A1/en
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Priority to KR1020240083858A priority patent/KR20250007980A/ko
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Abstract

本发明提供了一种用于半导体工件的低压氧化处理方法和低压氧化处理装置。所述低压氧化处理方法包括步骤：对反应腔室抽吸，使得所述反应腔室的压力低于760托；向所述反应腔室输入包括氢气和氧气的工艺气体；使所述反应腔室内的温度升高至使所述工艺气体生成氧自由基；使所述半导体工件暴露于所述氧自由基中，以在所述半导体工件的表面形成氧化物膜。本发明的方法利用在低压下由包括氢气和氧气的工艺气体形成的氧自由基与半导体工件表面反应，以形成氧化物膜，使得氧化物膜层的均匀度更高，缺陷更少，氧化深度更易控制。

Description

用于半导体工件的低压氧化处理方法和装置
技术领域
本发明涉及半导体制造领域，尤其涉及用于半导体工件的低压氧化方法和装置，特别涉及低压氧自由基氧化方法和装置。
背景技术
半导体工件，特别是硅晶圆的氧化方法通常在O2、H2O/H2、H2O/O2、O2/H2氛围下进行热处理。常规的热处理工艺可包括热熔炉和快速热处理等方法，在这些方法中，通常要求氧化系统的温度要高于700℃，以提供氧化物在硅晶圆表面生长的活化能，而当温度低于700℃时，会导致氧化不足。
发明内容
本发明提供了一种用于半导体工件的低压氧化处理方法，和低压氧化处理装置。
根据本发明的一方面，提供了一种用于半导体工件的低压氧化处理方法，包括步骤：
对反应腔室抽吸，使得所述反应腔室的压力低于760托；
向所述反应腔室输入包括氢气和氧气的工艺气体；
使所述反应腔室内的温度升高至使所述工艺气体生成氧自由基；
使所述半导体工件暴露于所述氧自由基中，以在所述半导体工件的表面形成氧化物膜。
根据本发明的另一方面，提供了一种用于半导体工件的低压氧化处理装置，包括反应腔室、至少一个加热元件和真空形成系统。
根据本发明的低压氧化处理方法利用氧自由基促进氧化物膜层的生长，从而提高氧化物膜层的均匀性，减少氧化物膜层的缺陷。
应当理解，本部分所描述的内容并非旨在标识本发明的实施例的关键或重要特征，也不用于限制本发明的范围。本发明的其它特征将通过以下的说明书而变得容易理解。
附图说明
附图用于更好地理解本方案，不构成对本发明的限定。其中：
图1是根据本发明实施方式的低压氧化处理装置的俯视图；
图2是根据本发明实施方式的低压氧化处理装置的右侧视图；
图3和图4分别示出了氧气和氧自由基与硅晶圆的氧化过程示意图。
具体实施方式
以下结合附图对本公开的示范性实施例做出说明，其中包括本公开实施例的各种细节以助于理解，应当将它们认为仅仅是示范性的。因此，本领域普通技术人员应当认识到，可以对这里描述的实施例做出各种改变和修改，而不会背离本公开的范围。同样，为了清楚和简明，以下的描述中省略了对公知功能和结构的描述。
当前半导体工件(例如硅晶圆)通常采用远程等离子体氧化工艺，例如微波等离子体源产生富含氧自由基的等离子体，在常压、高温的反应腔室内与硅晶圆表面的硅反应，从而在硅晶圆表面生成二氧化硅氧化物膜层。在该常压高温工艺中，温度控制的精确性对于该远程等离子体氧化工艺尤为重要。
低压氧化处理装置
根据本公开一实施方式的低压氧化处理装置可包括工件支撑元件、反应腔室、至少一个气体供应源、至少一个加热元件和真空生成系统。
具体地，参见图1和图2，根据一具体实施方式的低压氧化处理装置包括上灯板3，下灯板4，以及由上灯板3、下灯板4和反应腔室主体5限定的反应腔室，设置在上灯板3中的上灯组1，设置在下灯板4中的下灯组2，位于反应腔室一端侧壁的晶圆出入口6，以及位于反应腔室与晶圆出入口6相对一端的至少两个气体入口，用于与不同的气体源连通。
根据一个实施例，位于反应腔室内的工件支撑元件配置用于支撑待处理的半导体工件，可以具有合适支撑半导体工件的任何形状、配置和/或构造，并且可包括旋转盘(例如石英盘)14以及位于该旋转盘14上可升降的多个支撑柱(例如石英柱)10，用于支撑并旋转待处理工件(即硅晶圆9)。
根据一个实施例，上述加热元件可包括上下两组设置于灯板中的灯组，以对置于反应腔室中的半导体工件进行双面加热，使得能够减小晶圆在加热过程中的形变，有效地提高晶圆的良率，并且提供了更大的功率去增加升温速率，从而可以提高单位时间的产出率。上述灯板可为石英板。
上述灯组可包括设置于灯板中的至少一个区域的灯管阵列。可用于本发明的灯可采用卤素灯。上灯组对位于上下灯板之间的工件支撑件所支撑的晶圆上表面加热，下灯组对晶圆下表面加热。由此，上下两个灯组可对晶圆进行双面辐射加热，从而有效避免图形效应，改善晶圆上的应力。
根据一个实施例，上述气体入口可设置在反应腔室主体的一端侧壁上，也可以设置在反应腔室的顶板上，或者可以设置在反应腔室的一端侧壁和顶板上，以能够方便地根据实际工艺调整气体的输入量和在反应腔室内形成均匀的气流。
根据一个实施例，反应腔室一端的至少两个气体入口可通过气体管道7,8分别与不同的气体源连通，例如可分别与工艺气体的氢气源和氧气源连通，根据另一个具体实施例，上述气体管道还可与氮气源连通。并且，还可在气体管道7,8上设置流量传感器(例如流量计)和/或气压控制阀。通过流量传感器和气压控制阀精确计量输入反应腔室的气体流量，进而有利于精确调节反应腔室内的压力为低压。
根据一个实施例，在与气体入口相对的一端的反应腔室主体下部，连通设置有真空发生系统，其包括通过管道连通的真空泵13、传感器11和控制阀12。其中，传感器11和控制阀12与该低压氧化处理装置的控制器通信连通。具体地，真空泵13启动，将气体从反应腔室内抽出，以控制反应腔室内的气体量，从而使反应腔室内的压力保持在设定范围内。传感器11感测感应腔室内的压力，并将感测到的压力值反馈至该低压氧化处理装置的控制器(未示出)，将测量的压力值与预先设定的设定值进行比较，根据比较结果调节控制阀12的开度，即反应腔室的压力测量值大于设定值时，调大控制阀12的开度，加大抽出的气体量，使反应腔室的压力降低；反应腔室的压力测量值小于设定值时，调小控制阀12的开度，减少抽出的气体量，使反应腔室的压力降低。
根据一个实施例，反应腔室中的压力要求例如低于760托(Torr)，具体地，该低压为1～20Torr，优选为2～15Torr，例如可为3Torr，4Torr，6Torr，8Torr，10Torr，12Torr。在本发明中，压力的控制精度在0.1Torr以内。
根据一个实施例，本发明的低压氧化处理装置可实现15～130埃的厚度，例如50埃，70埃，90埃，105埃，120埃。
上述低压氧化处理装置可实现在低压(优选1～20托的压力)下对硅晶圆的表面进行高质量氧化，形成的氧化硅薄膜均匀度高、缺陷少，并且氧化深度较大。
低压氧化处理方法
根据本发明的一方面，提供了一种用于半导体工件的低压氧化处理方法，包括步骤：
对反应腔室抽吸，使得所述反应腔室的压力低于760托；
向所述反应腔室输入包括氢气和氧气的工艺气体；
使所述反应腔室内的温度升高至使所述工艺气体生成氧自由基；
使所述半导体工件暴露于所述氧自由基中，以在所述半导体工件的表面形成氧化物膜。
根据一个实施例，本发明的低压氧化处理方法在低于760托(Torr)，具体地是在1～20托的低压下进行，优选为2～15Torr，例如可为3Torr，4Torr，6Torr，8Torr，10Torr，12Torr。
根据一个实施例，工艺气体生成氧自由基可在750～1100℃下发生，优选800～1000℃，更优选850～950℃，例如880℃，900℃。
根据一个实施例，上述低压氧化处理方法中所用的工艺气体包括氢气和氧气，优选由氢气和氧气组成。并且，工艺气体的总流量可为20～60L/min，优选25～55L/min，更优选30～50L/min，例如35L/min，40L/min，45L/min，48L/min。该总流量过高会影响生成的氧化物膜层的均匀度，过低则会造成压力控制不稳定，进而使生成的氧化物膜层产生缺陷或者厚度不均匀。具体地，基于工艺气体的总流量，氢气的流量百分比可为大于0且小于或等于33％，优选1～28％，更优选为5～25％，例如8％，12％，15％，18％，20％，23％；氧气的流量百分比可为67％以上，且不为100％，优选70～95％，更优选75～90％，例如80％，85％。
在本发明的低压氧处理方法中，工艺气体包含氢气和氧气，使得在上述低压、高温条件下，氧气发生裂解产生氧自由基。而氢气的存在有助于延长氧自由基的存活时间，加快氧化速率，使得氧化处理速率升高，形成的氧化物层厚度大，生长速率快，但氧化物层的均匀度不容易控制。因此，需要在适当的氢气流量和工艺时间内完成氧化处理。
进一步地，出于工艺安全性考虑，必须在反应腔室的压力为20托以下时，才能开始输入氢气。工艺气体可以从反应腔室的侧面，或者顶面，或者侧面和顶面输入，以在晶圆表面形成均匀气流。
本发明的低压氧化处理方法包括在低压条件下，利用氢气和氧气的工艺气体在高温下形成氧自由基，进而使晶圆表面的硅氧化形成氧化硅层。具体地，参见图3，其示出了常规方法采用氧气氧化硅晶圆的过程示意图，其中，高温条件下，氧气首先与硅晶圆表面的硅反应生成氧化硅，逐渐形成氧化硅层，而当需要进一步向深处形成氧化物层时，氧气分子首先需要穿过已经形成的氧化硅层，由于已生成的氧化硅分子的阻挡，氧气分子穿透至深层硅的速度变慢，由此氧化速率变慢，并且氧化物层的均匀性受限。
图4示出了根据本发明的低压氧化处理方法的氧化过程示意图。其中，上述低压、高温条件下，氧气裂解生成氧自由基。对比地，氧气分子的直径约为0.346nm，氧自由基的直径约为0.148nm，即氧自由基比氧分子具有显著小的直径。因此，氧自由基在氢气的存在下，首先与硅晶圆表面的硅反应生成氧化硅，逐渐形成氧化硅层，而当需要进一步向深处形成氧化物层时，氧自由基同样需要穿过已经形成的氧化硅层，由于氧自由基较小的直径，虽然已生成的氧化硅颗粒仍然有阻挡，但氧自由基更容易扩散至晶圆的硅层内部，穿透至深层硅的速度显著更快，更有利于氧化膜层的生长。因此，根据本发明的氧化处理方法能够提高氧化速率，并且氧化物层的均匀度更高，缺陷较小，膜层质量更高。
本发明的低压氧化处理方法要求的反应腔室内的低压需要通过压力控制系统来实现。根据一个实施方式，如图1和图2所示，该压力控制系统可包括与气体入口连通的气体源，以及真空生成系统。通过控制输入反应腔室的气体，例如工艺气体的流量，在本发明中，工艺气体的总流量控制在20～60L/min，并且保持恒定。输入气体的流量可通过在气体管道7,8上设置流量传感器(例如流量计)和/或气压控制阀。为了维持反应腔室内的低压，通过在气体入口的相对的一端设置真空发生系统，即包括真空泵13、传感器11和控制阀12，在保持输入气体流量基本恒定的情况下，启动真空泵13，将气体从反应腔室内抽出，以控制反应腔室内的气体量，从而使反应腔室内的压力保持在设定范围内。进一步地，传感器11感测感应腔室内的压力，并将感测到的压力值反馈至该低压氧化处理装置的控制器(未示出)，将测量的压力值与预先设定的设定值进行比较，根据比较结果调节控制阀12的开度，即反应腔室的压力测量值大于设定值时，调大控制阀12的开度，加大抽出的气体量，使反应腔室的压力降低；反应腔室的压力测量值小于设定值时，调小控制阀12的开度，减少抽出的气体量，使反应腔室的压力降低。
在本发明要求的1-20Torr的低压下，腔体内的气体量较少，因此反应腔室内压力的精确控制对氧自由基的产生和氧化反应的高质量、高效率进行至关重要。
根据本发明的低压氧化处理方法还包括在待处理的半导体工件(例如晶圆)进入反应腔室之前，以及在低压氧化处理反应完成后，都可以向反应腔体充入氮气。
根据本发明的低压氧化处理方法利用低压高温条件使氧气生成氧自由基，并且在氢气的促进下，使氧自由基具有更长的存活时间，更易扩散进入深层的硅层，从而实现更大的氧化深度，减少氧化物膜层的缺陷，从而获得高品质的氧化物膜层，可用于各种高品质制程。
应该理解，可以使用上面所示的各种形式的流程，重新排序、增加或删除步骤。例如，本公开中记载的各步骤可以并行地执行也可以顺序地执行也可以不同的次序执行，只要能够实现本公开公开的技术方案所期望的结果，本文在此不进行限制。
上述具体实施方式，并不构成对本公开保护范围的限制。本领域技术人员应该明白的是，根据设计要求和其他因素，可以进行各种修改、组合、子组合和替代。任何在本公开的原则之内所作的修改、等同替换和改进等，均应包含在本公开保护范围之内。

Claims (8)

1.一种用于半导体工件的低压氧化处理方法，其特征在于，包括步骤：
对反应腔室抽吸，使得所述反应腔室的压力处于1~20托范围内；
向所述反应腔室输入包括氢气和氧气的工艺气体；
使所述反应腔室内的温度升高至使所述工艺气体生成氧自由基；
使所述半导体工件暴露于所述氧自由基中，以在所述半导体工件的表面形成氧化物膜。
2.根据权利要求1所述的低压氧化处理方法，其中，在750~1100℃下由所述工艺气体生成氧自由基。
3.根据权利要求1所述的低压氧化处理方法，其中，基于所述工艺气体的总流量，氢气的流量百分比为33%以下且不为零，氧气的流量百分比为67%以上，且不为100%。
4.根据权利要求1所述的低压氧化处理方法，其中，所述工艺气体的总流量为20~60L/min。
5.根据权利要求1至4中任一项所述的低压氧化处理方法，其中，所述工艺气体从所述反应腔室的侧面，或者顶面，或者侧面和顶面输入。
6.一种用于半导体工件的低压氧化处理装置，其特征在于，包括反应腔室、至少一个加热元件和真空形成系统，其中所述反应腔室的压力处于1~20托范围内。
7.根据权利要求6所述的低压氧化处理装置，其中，所述真空形成系统包括真空泵、传感器和控制阀。
8.根据权利要求6所述的低压氧化处理装置，还包括位于所述反应腔室的一端侧壁的至少一个工艺气体输入口。
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