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CN116759188B - Superconducting magnet - Google Patents

Superconducting magnet Download PDF

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Publication number
CN116759188B
CN116759188B CN202311020677.7A CN202311020677A CN116759188B CN 116759188 B CN116759188 B CN 116759188B CN 202311020677 A CN202311020677 A CN 202311020677A CN 116759188 B CN116759188 B CN 116759188B
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Prior art keywords
end wall
coils
superconducting
annular
wall
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CN202311020677.7A
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CN116759188A (en
Inventor
尹瑞
汤洪明
吴金志
李建晖
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Suzhou Bapima Superconducting Technology Co ltd
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Suzhou Bapima Superconducting Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/04—Cooling

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The embodiment of the application relates to a superconducting magnet, and relates to the technical field of magnets. The superconducting magnet includes: superconducting coils and cryogenic containers; the low-temperature container is used for providing an ultralow-temperature vacuum environment for enabling the superconducting coil to be in a superconducting state; the shape of the low-temperature container is annular; the low-temperature container is provided with a abdication part for providing a channel for communicating the annular interior and the annular exterior; the annular interior has a space for accommodating a single crystal semiconductor material growth furnace; the channel is used for accommodating auxiliary devices beside the single crystal semiconductor material growing furnace. The embodiment of the application solves the problem that the superconducting magnet is interfered when the superconducting magnet is additionally arranged on the single crystal semiconductor material growth furnace, and reduces the refitting cost.

Description

Superconducting magnet
Technical Field
The application relates to the technical field of magnets, in particular to a superconducting magnet.
Background
At present, most single crystal silicon growing furnaces are not additionally provided with superconducting magnets, and the manufacturing requirements of N-type silicon wafers and the like cannot be met. In order to overcome the defects, the conventional choice of the current user is to modify the current monocrystalline silicon growth furnace, such as adding a superconducting magnet, so as to adapt to the low-oxygen technology and the like and meet the manufacturing requirements of producing N-type silicon wafers and the like.
However, almost no existing single crystal silicon growth furnace is considered for adding superconducting magnets in advance, and if superconducting magnets are to be added, the original mechanisms such as a water pipe and a temperature measuring mechanism on the single crystal silicon growth furnace can generate a plurality of interference problems for the adding, so that the difficulty and the cost of modification are increased.
Disclosure of Invention
Accordingly, embodiments of the present application provide a superconducting magnet to solve at least one of the problems in the background art.
In a first aspect, embodiments of the present application provide a superconducting magnet, comprising: superconducting coils and cryogenic containers; the low-temperature container is used for providing an ultralow-temperature vacuum environment for enabling the superconducting coil to be in a superconducting state;
the shape of the low-temperature container is annular;
the low-temperature container is provided with a abdication part for providing a channel for communicating the annular interior and the annular exterior; the annular interior having a space for accommodating a single crystal semiconductor material growth furnace; the channel is used for accommodating auxiliary devices beside the single crystal semiconductor material growing furnace.
With reference to the first aspect, in an alternative embodiment, the cryogenic container includes a first cavity portion, a second cavity portion, and a third cavity portion;
the first cavity part is annular in shape and is used for providing a first environment which is vacuum and has a first temperature; the first cavity part is provided with the abdication part; the first cavity part is internally provided with the second cavity part; the second cavity part is internally provided with the third cavity part;
the second cavity portion is for providing a second environment having a second temperature;
the superconducting coil is arranged in the third cavity part and used for providing a third environment with a third temperature; the first temperature, the second temperature and the third temperature decrease in sequence.
With reference to the first aspect, in an alternative embodiment, the second cavity portion and the third cavity portion are each a single interior space;
the superconducting coils include at least one set of paired first coils; the pair of first coils are distributed in a central symmetry mode around the central axis of the first cavity part;
the abdication part is positioned between two adjacent first coils in the at least one pair of first coils.
With reference to the first aspect, in an alternative embodiment, the superconducting coil includes at least two pairs of first coils; an included angle between the central connecting lines of the adjacent pairs of first coils is 50-90 degrees.
With reference to the first aspect, in an alternative embodiment, the superconducting coil further includes at least one set of paired second coils for passing a current opposite to the first coils; the pair of second coils are distributed in a central symmetry mode around the central axis of the first cavity part;
the second coil is arranged in the first cavity part and is positioned outside the first coil; the number of second coils is greater than the number of first coils.
With reference to the first aspect, in an alternative embodiment, the superconducting coil further includes at least two pairs of second coils; the included angle between the central connecting lines of the adjacent pairs of second coils is 40-60 degrees.
With reference to the first aspect, in an alternative embodiment, the third cavity portion includes a first number of mutually independent first inner subspaces; the superconducting coil includes a second number of first coils; the second number is greater than or equal to the first number;
at least one first coil is arranged in each first inner subspace.
With reference to the first aspect, in an alternative embodiment, the second cavity portion includes a third number of mutually independent second inner subspaces; the first number is greater than or equal to the third number;
at least one third cavity part is arranged in each second inner subspace.
With reference to the first aspect, in an alternative embodiment, the first cavity portion includes a first end wall, a second end wall, a first upper annular end wall, a first lower annular end wall, a first inner annular cylinder wall, and a first outer annular cylinder wall; the first end wall is respectively in sealing connection with the first upper annular end wall, the first lower annular end wall, the first inner annular cylinder wall and the first outer annular cylinder wall; the second end wall is respectively and hermetically connected with the first upper annular end wall, the first lower annular end wall, the first inner annular cylinder wall and the first outer annular cylinder wall;
the first cavity part is arranged outside, and the abdication part is formed between the first end wall and the second end wall; the relief portion communicates the openings of the first upper annular end wall and the first lower annular end wall on the circumferential surface in the axial direction.
With reference to the first aspect, in an alternative embodiment, the second cavity portion includes a third end wall, a fourth end wall, a second upper annular end wall, a second lower annular end wall, a second inner annular cylinder wall, and a second outer annular cylinder wall; the third end wall is respectively connected with the second upper annular end wall, the second lower annular end wall, the second inner annular cylinder wall and the second outer annular cylinder wall; the fourth end wall is respectively connected with the second upper annular end wall, the second lower annular end wall, the second inner annular cylinder wall and the second outer annular cylinder wall;
and a passage which is communicated with the opening of the second upper annular end wall and the second lower annular end wall on the circumferential surface in the axial direction is arranged between the third end wall and the fourth end wall.
With reference to the first aspect, in an alternative embodiment, the third cavity portion includes a fifth end wall, a sixth end wall, a third upper annular end wall, a third lower annular end wall, a third inner annular cylinder wall, and a third outer annular cylinder wall; the fifth end wall is respectively connected with the third upper annular end wall, the third lower annular end wall, the third inner annular cylinder wall and the third outer annular cylinder wall; the sixth end wall is respectively connected with the third upper annular end wall, the third lower annular end wall, the third inner annular cylinder wall and the third outer annular cylinder wall;
a passage communicating in the axial direction between the fifth end wall and the sixth end wall includes an opening in the circumferential surface of the third upper annular end wall and the third lower annular end wall.
The technical scheme provided by the embodiment of the application has the beneficial effects that: the annular low-temperature container of the superconducting magnet provides a channel for communicating the inside and the outside of the annular through the abdication part, and auxiliary devices (such as a water pipe, a temperature measuring device and the like) beside the single crystal semiconductor material growing furnace can be accommodated in the channel, so that the problem that interference is generated when the superconducting magnet is additionally arranged on the single crystal semiconductor material growing furnace is solved. And because the abdication part can play a good role in avoiding, the difficulty and the cost for refitting the single crystal semiconductor material growth furnace which is not considered in advance for adding the superconducting magnet are greatly reduced.
Additional aspects and advantages of embodiments of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the application.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the embodiments of the application and do not constitute an undue limitation on the embodiments of the application. In the drawings:
FIG. 1 is a schematic diagram of an auxiliary device interfering with a superconducting magnet according to an embodiment of the present application;
fig. 2 is a schematic structural view of a specific example of a superconducting magnet in an embodiment of the present application;
FIG. 3 is a schematic view showing the structure of a specific example of a cryogenic vessel in an embodiment of the application;
FIG. 4 is a schematic cross-sectional view of a specific example of a cryogenic vessel in an embodiment of the application;
fig. 5 is a schematic structural view showing a specific example of a superconducting coil in the embodiment of the present application;
fig. 6 is a schematic structural view of another specific example of a superconducting coil in the embodiment of the present application;
FIG. 7 is a schematic structural view of a specific example of the first cavity portion according to the embodiment of the present application;
FIG. 8 is a schematic structural view of a specific example of the second cavity portion according to the embodiment of the present application;
FIG. 9 is a schematic structural view of a specific example of the third cavity portion according to the embodiment of the present application;
fig. 10 is a schematic structural view of still another specific example of a superconducting coil in the embodiment of the present application.
Reference numerals illustrate:
a 001' -closed loop type superconducting magnet, a 001-superconducting magnet, a 002-single crystal semiconductor material growth furnace, 003-auxiliary means, a 1-low temperature vessel, a 2-relief portion, 10-first cavity portion, 20-second cavity portion, 30-third cavity portion, 11-first end wall, 12-second end wall, 13-first upper annular end wall, 14-first lower annular end wall, 15-first inner annular end wall, 16-first outer annular end wall, 21-third end wall, 22-fourth end wall, 23-second upper annular end wall, 24-second lower annular end wall, 25-second inner annular end wall, 26-second outer annular end wall, 31-fifth end wall, 32-sixth end wall, 33-third upper annular end wall, 34-third lower annular end wall, 35-third inner annular end wall, 36-third outer annular end wall, 37-first coil, 38-second coil, 131-first magnetic shield layer, 141-second magnetic shield layer, 161-third magnetic shield layer.
Detailed Description
In order to make the technical scheme and beneficial effects of the embodiments of the present application more obvious and understandable, the following detailed description is given by way of example only. Wherein the drawings are not necessarily to scale, and wherein local features may be exaggerated or reduced to more clearly show details of the local features; unless otherwise defined, technical and scientific terms used herein have the same meaning as those in the technical field to which the embodiments of the present application belong.
It should be noted that the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element. When "first" is described, it does not necessarily mean that "second" is present; and when "second" is discussed, it is not intended that the application necessarily exists "first". The singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The term "comprising" is used to determine the presence of an included feature, but does not exclude the presence or addition of one or more other features. The term "and/or" includes any and all combinations of the associated listed items. The term "connected" may be a direct connection between two components, an indirect connection established via other components, a communication between two components, or any other possible connection.
The superconducting magnet can be used as a magnetic field generating source of a single crystal semiconductor material growth furnace, and is particularly suitable for preparing single crystal silicon by a magnetron Czochralski method. The superconducting magnet has a cryogenic container and a superconducting coil disposed inside the cryogenic container. When the superconducting magnet works, the inner space of the low-temperature container provides an ultra-low-temperature vacuum environment for the superconducting coil to be in a superconducting state. The semiconductor material is, for example, silicon, germanium, or the like.
As shown in fig. 1, a general superconducting magnet is a closed-loop superconducting magnet 001' and has a closed-loop cryogenic container. The closed-loop type low-temperature container is a closed-loop cavity, the closed loop of which is continuous in the circumferential direction around the single crystal semiconductor material growth furnace 002, and has no opening. For example, fig. 1 shows that the cryocontainer of the enclosed superconducting magnet 001' is a closed-loop annular cavity. When the closed superconducting magnet 001 'is additionally installed on the single crystal semiconductor material growing furnace 002 which is not considered in advance for the installation of the superconducting magnet, the auxiliary device 003 (such as a water pipe, a temperature measuring device, etc.) beside the single crystal semiconductor material growing furnace 002 interferes with the closed superconducting magnet 001'.
An embodiment of the present application provides a superconducting magnet, as shown in fig. 2 and 3, the superconducting magnet 001 including: superconducting coils and a cryogenic vessel 1; the cryogenic container 1 is used for providing an ultra-low temperature vacuum environment for putting the superconducting coils in a superconducting state;
the shape of the cryogenic container 1 is annular;
the cryogenic container 1 is provided with a relief 2 for providing a channel communicating the annular interior a and the exterior B; the annular interior has a space for accommodating the single crystal semiconductor material growth furnace 002; the channel is adapted to receive an auxiliary device 003 beside the single crystal semiconductor material growth furnace 002.
In the embodiment of the present application, the form of the abdication portion 2 may be set according to actual requirements, for example, may be an annular C-shape, etc., and its cross section may be rectangular, triangular, circular, oval, etc. It will be appreciated by those skilled in the art that any form of relief can be provided that communicates between the inner a and outer B passages of the annulus C.
In the embodiment of the application, the annular low-temperature container of the superconducting magnet is provided with the abdication part to connect the inside and the outside of the annular low-temperature container, and auxiliary devices (such as a water pipe, a temperature measuring device and the like) beside the single crystal semiconductor material growing furnace can be accommodated in the annular low-temperature container, so that the problem that interference is generated when the superconducting magnet is additionally arranged on the single crystal semiconductor material growing furnace is solved. And because the abdication part can play a good role in avoiding, the difficulty and the cost for refitting the single crystal semiconductor material growth furnace which is not considered in advance for adding the superconducting magnet are greatly reduced.
As an alternative embodiment, at least as shown in fig. 4, the cryogenic container 1 includes a first cavity portion 10, a second cavity portion 20, and a third cavity portion 30;
the first cavity portion 10 is annular in shape for providing a vacuum and a first environment having a first temperature; the first cavity part 10 is provided with a abdication part 2; a second cavity part 20 is arranged in the first cavity part 10; a third cavity part 30 is arranged in the second cavity part 20;
the second cavity portion 20 is for providing a second environment having a second temperature;
a superconducting coil is arranged in the third cavity part 30 and is used for providing a third environment with a third temperature; the first temperature, the second temperature and the third temperature decrease in sequence.
In the embodiment of the application, the range of the first temperature is 300K-50K, the range of the second temperature is 50K-4K, and the third temperature is 4K. The end point 50K can be adjusted according to actual requirements, for example, it can be replaced by 77K. By setting the first cavity portion to be annular with the relief portion, the low-temperature container has the outer shape of the first cavity portion since the second cavity portion is provided in the first cavity portion and the third cavity portion is provided in the second cavity portion. Thereby solving the problem that the superconducting magnet is interfered when being additionally arranged on the single crystal semiconductor material growing furnace. And through the temperature control of the first temperature in the first cavity part and the temperature control of the second temperature in the second cavity part, the whole cavity environment of two-stage temperature control is provided to maintain the third temperature of the superconducting coil in the third cavity part in the superconducting state, instead of controlling the temperature of the superconducting coil by using the temperature conduction of the heat conducting plate alone. The cooling by utilizing the cavity environment is faster and more stable, thereby improving the cooling efficiency.
The size and number of the second and third cavity parts 20 and 30 may be set according to the size and number of the superconducting coils.
As an alternative embodiment, at least as shown in fig. 5 and 8, the second cavity portion 20 and the third cavity portion 30 are each a single internal space;
the superconducting coils include at least one set of paired first coils 37; the pairs of first coils 37 are distributed in central symmetry around the central axis of the first cavity portion 10;
the relief portion 2 is located between two adjacent first coils 37 of the at least one pair of first coils 37.
In the embodiment of the application, the abdication part 2 is arranged between two adjacent first coils 37 in at least one pair of first coils 37, so that the influence on the magnetic field provided by the superconducting coils is reduced, and the quality of monocrystalline silicon produced by the magnetron Czochralski method is ensured.
The number of sets of pairs of first coils 37 can be adjusted to meet the actual demand for magnetic field during the preparation of single crystal silicon by the magnetron czochralski method. For example, the superconducting coil includes two sets of paired first coils 37, and the centers of each first coil 37 are located on the same plane and are uniformly distributed.
As an alternative embodiment, at least as shown in FIG. 6, the included angle θ between the center lines of adjacent pairs of first coils 37 is 50 ° -90 ° to increase the magnetic field strength per unit area, thereby improving the suppression effect on the thermal convection of the melt in the single crystal semiconductor material growth furnace 002 while ensuring the uniformity of suppression, so that the produced single crystal silicon has a high purity and the quality of single crystal silicon is improved.
In the embodiment of the present application, the shape of the first coil 37 may be set according to actual requirements, and may be a circular coil, a saddle coil, a square coil, or the like. If at least two pairs of the first coils 37 are provided, the shape of each pair may be the same or different. For example, at least one set is a saddle coil and another set is a circular coil. Those skilled in the art will appreciate that other configurations of the at least two sets are possible.
As an alternative embodiment, the third cavity portion 30 comprises a first number of mutually independent first inner subspaces; the superconducting coil includes a second number of first coils 37; the second number is greater than or equal to the first number;
at least one first coil 37 is disposed within each first interior subspace.
In the embodiment of the application, the mutually independent first inner subspaces are not communicated. One or more than two first coils can be arranged in each first inner subspace, so that independent temperature control of each first coil or two adjacent second coils is realized, and the time for the first coils to enter a superconducting state is regulated and controlled. So that the first coil can sequentially enter a superconducting state, so that the magnetic field provided by the superconducting coil is increased in time. The first coil can also be controlled to enter a superconducting state at different times in different orientations so that the magnetic field provided by the superconducting coil is spatially variable. Therefore, the method can meet the requirement that the magnetic field can be used for preparing monocrystalline silicon in a time and space adjustable manner, and improves the applicability of preparing different monocrystalline silicon. In addition, by dividing the third cavity portion 30 into the first number of mutually independent first inner subspaces, compared with the temperature control of the single inner space, the temperature control area is reduced, so that the temperature reduction is more beneficial to quickly and stably reducing the temperature, improving the temperature reduction efficiency, and keeping the stability of the factors such as the temperature of the environment in the first inner subspace.
As an alternative embodiment, the second cavity portion 20 comprises a third number of mutually independent second inner subspaces; the first number is greater than or equal to the third number;
at least one third cavity portion 30 is provided within each second interior subspace.
In the embodiment of the application, the mutually independent second inner subspaces are not communicated. One or more than two third cavity parts can be arranged in each second inner subspace, so that independent temperature control of the third cavity parts in one second inner subspace is realized, and the cooling efficiency and the temperature stability are improved.
As an alternative embodiment, at least as shown in fig. 3, the first cavity portion 10 comprises a first end wall 11, a second end wall 12, a first upper annular end wall 13, a first lower annular end wall 14, a first inner annular cylinder wall 15 and a first outer annular cylinder wall 16; the first end wall 11 is respectively in sealing connection with a first upper annular end wall 13, a first lower annular end wall 14, a first inner annular cylinder wall 15 and a first outer annular cylinder wall 16; the second end wall 12 is respectively in sealing connection with a first upper annular end wall 13, a first lower annular end wall 14, a first inner annular cylinder wall 15 and a first outer annular cylinder wall 16;
a relief portion 2 is formed between the first end wall 11 and the second end wall 12 outside the first cavity portion 10; the relief portion 2 communicates the openings of the first upper annular end wall 13 and the first lower annular end wall 14 on the circumferential surface in the axial direction.
In the embodiment of the present application, between the first end wall 11 and the second end wall 12 is a passage through which the first upper annular end wall 13 and the first lower annular end wall 14 communicate in the axial direction. By providing the first end wall 11 and the second end wall 12, the problem of interference generated when the superconducting magnet is added to the single crystal semiconductor material growth furnace is solved. And because the openings of the first upper annular end wall 13 and the first lower annular end wall 14 on the circumferential surface of the first end wall 11 and the second end wall 12 are communicated in the axial direction, the auxiliary devices 003 (such as a water pipe, a temperature measuring device and the like) beside the single crystal semiconductor material growing furnace 002 can play a better role in avoiding interference with the low temperature container 1, and the difficulty and cost for modifying the single crystal semiconductor material growing furnace which is not considered for adding the superconducting magnet in advance are greatly reduced.
As an alternative embodiment, at least as shown in fig. 7, both side surfaces of the first upper annular end wall 13 are provided with first magnetic shield layers 131; the two side surfaces of the first lower annular end wall 14 are provided with second magnetic shielding layers 141; the first outer annular cylinder wall 16 is provided with third magnetic shielding layers 161 on both side surfaces thereof; the first, second and third magnetic shield layers 131, 141 and 161 serve to shield the diffusion of the magnetic field generated by the superconducting coil to the outside B of the ring shape C of the first cavity part 10, improving safety. Preferably, the materials of the first magnetic shielding layer 131, the second magnetic shielding layer 141 and the third magnetic shielding layer 161 are all pure iron or carbon steel, so that the leakage of a magnetic field is effectively prevented or controlled within a certain range, and the safety is improved. The first magnetic shield layer 131 and the first upper annular end wall 13 may be layered structures or may be integrally formed structures. The second magnetic shield layer 141 and the first lower annular end wall 14 may be layered structures or may be integrally formed structures. The third magnetic shield layer 161 and the first outer annular cylinder wall 16 may be layered structures or integrally formed structures.
As an alternative embodiment, at least as shown in fig. 8, the second cavity portion 20 comprises a third end wall 21, a fourth end wall 22, a second upper annular end wall 23, a second lower annular end wall 24, a second inner annular cylinder wall 25 and a second outer annular cylinder wall 26; the third end wall 21 is connected to a second upper annular end wall 23, a second lower annular end wall 24, a second inner annular cylinder wall 25 and a second outer annular cylinder wall 26, respectively; the fourth end wall 22 is connected to a second upper annular end wall 23, a second lower annular end wall 24, a second inner annular cylinder wall 25 and a second outer annular cylinder wall 26, respectively;
a passage in which openings on the circumferential surfaces of the second upper annular end wall 23 and the second lower annular end wall 24 communicate in the axial direction is included between the third end wall 21 and the fourth end wall 22.
As an alternative embodiment, at least as shown in fig. 9, the third cavity portion 30 includes a fifth end wall 31, a sixth end wall 32, a third upper annular end wall 33, a third lower annular end wall 34, a third inner annular cylinder wall 35, and a third outer annular cylinder wall 36; the fifth end wall 31 is connected to a third upper annular end wall 33, a third lower annular end wall 34, a third inner annular cylinder wall 35 and a third outer annular cylinder wall 36, respectively; the sixth end wall 32 is connected to a third upper annular end wall 33, a third lower annular end wall 34, a third inner annular cylinder wall 35 and a third outer annular cylinder wall 36, respectively;
a passage in which openings on the circumferential surfaces of the third upper annular end wall 33 and the third lower annular end wall 34 communicate in the axial direction is included between the fifth end wall 31 and the sixth end wall 32.
In the embodiment of the present application, the heat conducting layers are disposed on both side surfaces of each wall of the second cavity portion 20 and the third cavity portion 30. Preferably, the material of the heat conducting layer is oxygen-free copper. The oxygen-free copper has excellent heat conduction performance, can reach the required low temperature and has lower cost.
As an alternative embodiment, as shown in fig. 10, the superconducting coil further includes at least one set of paired second coils 38 for supplying a current opposite to the first coils 37; the pairs of second coils 38 are distributed in central symmetry around the central axis of the first cavity portion 10;
the second coil 38 is disposed in the first cavity 10 and outside the first coil 37; the number of second coils 38 is greater than the number of first coils 37.
In the embodiment of the present application, the second coil 38 is provided outside the first coil 37 such that the second coil 38 is farther from the central axis of the cryogenic container 1 than the first coil 37. The current direction in the second coil 38 is opposite to the current direction in the first coil 37, and the second coil 38 is used for generating a magnetic field with smaller magnetic field strength than that generated by the first coil 37, so that the cancellation of the leakage magnetic field can be realized. The number and arrangement positions of the second coils 38 can be set according to actual requirements. By the number of the second coils 38 being larger than that of the first coils 37, the second coils 38 can be preferably uniformly distributed in the circumferential direction, so that the range and uniformity of canceling the leakage magnetic field are improved, and the shielding effect can be better achieved. The second coil 38 is disposed in the first cavity portion and is completely spatially isolated from the first coil 37 disposed in the third cavity portion, so that the influence of the magnetic field generated by the second coil 38 on the magnetic field in the annular interior of the cryogenic container can be reduced.
As an alternative embodiment, the angle between the center lines of adjacent pairs of second coils 38 is between 40-60 to increase the concentration of the generated magnetic field and to increase the shielding effect.
In the embodiment of the present application, the shape of the second coil 38 may be set according to actual requirements, and may be a circular coil, a saddle coil, a square coil, or the like. If at least two pairs of second coils 38 are provided, the shape of each pair may be the same or different. For example, at least one set is a saddle coil and another set is a circular coil. Those skilled in the art will appreciate that other configurations of the at least two sets are possible.
It should be understood that the above examples are illustrative and are not intended to encompass all possible implementations encompassed by the claims. Various modifications and changes may be made in the above embodiments without departing from the scope of the disclosure. Likewise, the individual features of the above embodiments can also be combined arbitrarily to form further embodiments of the application which may not be explicitly described. Therefore, the above examples merely represent several embodiments of the present application and do not limit the scope of protection of the patent of the present application.

Claims (9)

1. A superconducting magnet, comprising: superconducting coils and cryogenic containers; the low-temperature container is used for providing an ultralow-temperature vacuum environment for enabling the superconducting coil to be in a superconducting state;
the shape of the low-temperature container is annular;
the low-temperature container is provided with a abdication part for providing a channel for communicating the annular interior and the annular exterior; the annular interior having a space for accommodating a single crystal semiconductor material growth furnace; the channel is used for accommodating auxiliary devices beside the single crystal semiconductor material growing furnace;
the cryogenic container comprises a first cavity portion, a second cavity portion and a third cavity portion;
the first cavity part is annular in shape and is used for providing a first environment which is vacuum and has a first temperature; the first cavity part is provided with the abdication part; the first cavity part is internally provided with the second cavity part; the second cavity part is internally provided with the third cavity part;
the second cavity portion is for providing a second environment having a second temperature;
the superconducting coil is arranged in the third cavity part and used for providing a third environment with a third temperature; the first temperature, the second temperature and the third temperature decrease in sequence;
the third cavity portion includes a first number of mutually independent first interior subspaces; the superconducting coil includes a second number of first coils; the second number is greater than or equal to the first number;
at least one first coil is arranged in each first inner subspace, and each first coil is independently controlled in temperature; at least one of the first coils is sequentially brought into a superconducting state such that the magnetic field provided by the superconducting coils is temporally incremental, or the first coils are brought into a superconducting state at different times in different orientations such that the magnetic field provided by the superconducting coils is spatially variable.
2. The superconducting magnet of claim 1, wherein the second cavity portion includes a third number of mutually independent second interior subspaces; the first number is greater than or equal to the third number;
at least one third cavity part is arranged in each second inner subspace.
3. The superconducting magnet of claim 2, wherein the second and third cavity portions are each a single interior space;
the superconducting coils include at least one set of paired first coils; the pair of first coils are distributed in a central symmetry mode around the central axis of the first cavity part;
the abdication part is positioned between two adjacent first coils in the at least one pair of first coils.
4. A superconducting magnet according to claim 3, wherein the superconducting coils comprise at least two pairs of first coils; an included angle between the central connecting lines of the adjacent pairs of first coils is 50-90 degrees.
5. A superconducting magnet according to claim 3, wherein the superconducting coils further comprise at least one set of paired second coils for passing a current opposite to the first coils; the pair of second coils are distributed in a central symmetry mode around the central axis of the first cavity part;
the second coil is arranged in the first cavity part and is positioned outside the first coil; the number of second coils is greater than the number of first coils.
6. The superconducting magnet of claim 5, wherein the superconducting coils further comprise at least two pairs of second coils; the included angle between the central connecting lines of the adjacent pairs of second coils is 40-60 degrees.
7. The superconducting magnet of claim 1, wherein the first cavity portion comprises a first end wall, a second end wall, a first upper annular end wall, a first lower annular end wall, a first inner annular cylinder wall, and a first outer annular cylinder wall; the first end wall is respectively in sealing connection with the first upper annular end wall, the first lower annular end wall, the first inner annular cylinder wall and the first outer annular cylinder wall; the second end wall is respectively and hermetically connected with the first upper annular end wall, the first lower annular end wall, the first inner annular cylinder wall and the first outer annular cylinder wall;
the first cavity part is arranged outside, and the abdication part is formed between the first end wall and the second end wall; the relief portion communicates the openings of the first upper annular end wall and the first lower annular end wall on the circumferential surface in the axial direction.
8. The superconducting magnet of claim 7, wherein the second cavity portion comprises a third end wall, a fourth end wall, a second upper annular end wall, a second lower annular end wall, a second inner annular cylinder wall, and a second outer annular cylinder wall; the third end wall is respectively connected with the second upper annular end wall, the second lower annular end wall, the second inner annular cylinder wall and the second outer annular cylinder wall; the fourth end wall is respectively connected with the second upper annular end wall, the second lower annular end wall, the second inner annular cylinder wall and the second outer annular cylinder wall;
and a passage which is communicated with the opening of the second upper annular end wall and the second lower annular end wall on the circumferential surface in the axial direction is arranged between the third end wall and the fourth end wall.
9. The superconducting magnet of claim 8, wherein the third cavity portion comprises a fifth end wall, a sixth end wall, a third upper annular end wall, a third lower annular end wall, a third inner annular cylinder wall, and a third outer annular cylinder wall; the fifth end wall is respectively connected with the third upper annular end wall, the third lower annular end wall, the third inner annular cylinder wall and the third outer annular cylinder wall; the sixth end wall is respectively connected with the third upper annular end wall, the third lower annular end wall, the third inner annular cylinder wall and the third outer annular cylinder wall;
a passage communicating in the axial direction between the fifth end wall and the sixth end wall includes an opening in the circumferential surface of the third upper annular end wall and the third lower annular end wall.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1227285A (en) * 1998-02-17 1999-09-01 东芝株式会社 Superconducting magnet device for crystal pulling device
JP2009130081A (en) * 2007-11-22 2009-06-11 Toshiba Corp Superconducting magnet device
CN110911081A (en) * 2019-11-26 2020-03-24 江西联创光电超导应用有限公司 Dewar structure of superconducting magnet
CN111243821A (en) * 2020-03-13 2020-06-05 中国科学院电工研究所 Magnetic control czochralski single crystal superconducting magnet system
CN113811642A (en) * 2019-05-08 2021-12-17 信越半导体株式会社 Single crystal pulling device and single crystal pulling method
CN217757749U (en) * 2022-07-26 2022-11-08 晶科能源股份有限公司 Thermal field structure and single crystal furnace

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1227285A (en) * 1998-02-17 1999-09-01 东芝株式会社 Superconducting magnet device for crystal pulling device
JP2009130081A (en) * 2007-11-22 2009-06-11 Toshiba Corp Superconducting magnet device
CN113811642A (en) * 2019-05-08 2021-12-17 信越半导体株式会社 Single crystal pulling device and single crystal pulling method
CN110911081A (en) * 2019-11-26 2020-03-24 江西联创光电超导应用有限公司 Dewar structure of superconducting magnet
CN111243821A (en) * 2020-03-13 2020-06-05 中国科学院电工研究所 Magnetic control czochralski single crystal superconducting magnet system
CN217757749U (en) * 2022-07-26 2022-11-08 晶科能源股份有限公司 Thermal field structure and single crystal furnace

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