CN116641041A - Gas distribution device - Google Patents
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- CN116641041A CN116641041A CN202310508822.XA CN202310508822A CN116641041A CN 116641041 A CN116641041 A CN 116641041A CN 202310508822 A CN202310508822 A CN 202310508822A CN 116641041 A CN116641041 A CN 116641041A
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- 238000009826 distribution Methods 0.000 title claims abstract description 42
- 239000007789 gas Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000012707 chemical precursor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Valve Housings (AREA)
Abstract
Description
技术领域technical field
本发明涉及半导体工艺设备,尤其涉及一种气体分配装置。The invention relates to semiconductor process equipment, in particular to a gas distribution device.
背景技术Background technique
半导体薄膜沉积工艺例如ALD工艺,在ALD沉积工艺过程中,一种化学前躯体原料被注入沉积腔中,通过气相扩散至晶圆表面,一部分化学前躯体原料会吸附在晶圆表面,剩余的化学前躯体原料然后被排除沉积腔。在沉积腔被惰性气体吹扫清理后,另一种化学前躯体原料被注入沉积腔中,通过气相扩散至晶圆表面并吸附在表面,然后这两种化学前躯体原料之间进行表面反应,生成薄膜物质,反应副产物和剩余的化学前躯体原料被排除出沉积腔。ALD沉积是通过上述过程的重复循环进行来实现薄膜沉积的。其中主要物理和化学现象是表面吸附和表面化学反应。Semiconductor thin film deposition process such as ALD process, during the ALD deposition process, a chemical precursor material is injected into the deposition chamber, diffused to the wafer surface through the gas phase, a part of the chemical precursor material will be adsorbed on the wafer surface, and the remaining chemical precursor material The precursor material is then expelled from the deposition chamber. After the deposition chamber is purged and cleaned by inert gas, another chemical precursor material is injected into the deposition chamber, diffused to the surface of the wafer through the gas phase and adsorbed on the surface, and then there is a surface reaction between the two chemical precursor materials, Thin-film species, reaction by-products and remaining chemical precursor materials are expelled from the deposition chamber. ALD deposition is performed through repeated cycles of the above process to achieve thin film deposition. The main physical and chemical phenomena are surface adsorption and surface chemical reaction.
而在现有技术中,用于沉积反应的装置设备通常只能配置可进一种反应气体的歧管或阀块,若需增设输入气体,管路及阀门的布置庞大复杂,无法满足多样化的工艺需求。However, in the prior art, the equipment used for deposition reaction can usually only be equipped with a manifold or valve block that can enter one reaction gas. If it is necessary to add input gas, the layout of pipelines and valves is huge and complicated, which cannot meet the needs of diversification. process requirements.
为了克服现有技术存在的上述缺陷,本领域亟需一种气体分配装置,用于集成多种反应气体及惰性气体的进气,解决沉积设备因空间局限而不易拓展的缺陷,满足工艺反应的使用需求。In order to overcome the above-mentioned defects in the existing technology, a gas distribution device is urgently needed in this field, which is used to integrate the intake of various reactive gases and inert gases, solve the defect that the deposition equipment is not easy to expand due to space limitations, and meet the requirements of the process reaction Usage requirements.
发明内容Contents of the invention
以下给出一个或多个方面的简要概述以提供对这些方面的基本理解。此概述不是所有构想到的方面的详尽综览,并且既非旨在指认出所有方面的关键性或决定性要素亦非试图界定任何或所有方面的范围。其唯一的目的是要以简化形式给出一个或多个方面的一些概念以为稍后给出的更加详细的描述之序。A brief summary of one or more aspects is presented below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects and is intended to neither identify key or critical elements of all aspects nor attempt to delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
为了克服现有技术存在的上述缺陷,本发明提供了一种气体分配装置,包括:形状为多面立方体的集成歧管,该多面立方体包括多个进气面和一个输出面,每个该进气面及该输出面上分别设有多个第一进气口和多个输出口,该集成歧管的内部设有多条相互独立的气道以使得该进气面上的每个第一进气口与该输出面上的一个输出口相连通。In order to overcome the above-mentioned defects in the prior art, the present invention provides a gas distribution device, comprising: an integrated manifold in the shape of a multi-faceted cube, the multi-faced cube includes a plurality of inlet faces and an output face, each of the inlet faces A plurality of first air inlets and a plurality of output ports are respectively provided on the surface and the output surface, and a plurality of mutually independent air passages are arranged inside the integrated manifold so that each first air inlet on the air inlet surface The air port communicates with an output port on the output face.
在一实施例中,优选地,该多面立方体还包括设有多个阀口的阀体面,每个该第一进气口与该输出口均通过各自的该气道连接至对应的阀口,该阀口上设有多通阀块,用于控制每个该第一进气口与对应输出口的连通关断。In an embodiment, preferably, the multi-faceted cube further includes a valve body surface provided with a plurality of valve ports, and each of the first air inlet and the output port is connected to the corresponding valve port through the respective air channels, The valve port is provided with a multi-way valve block, which is used to control the connection and shutdown of each first air inlet and the corresponding output port.
在一实施例中,优选地,该阀体面在该多面立方体上的位置相邻于该进气面和该输出面。In an embodiment, preferably, the position of the valve body surface on the multi-sided cube is adjacent to the inlet surface and the output surface.
在一实施例中,优选地,同一进气面用于输入相同类别的气体,不同类别的气体通过不同的进气面输入该集成歧管,该不同类别的气体包括用于半导体薄膜沉积工艺的反应气体及惰性气体。In one embodiment, preferably, the same gas inlet surface is used to input the same type of gas, and different types of gases are input into the integrated manifold through different gas inlet surfaces. Reactive gases and inert gases.
在一实施例中,优选地,该进气面上的不同第一进气口用于输入不同气体。In an embodiment, preferably, different first air inlets on the air inlet surface are used to input different gases.
在一实施例中,优选地,该集成歧管为一体成型或由多个部件拼装而成。In an embodiment, preferably, the integrated manifold is integrally formed or assembled from multiple parts.
在一实施例中,优选地,该气体分配装置还包括转接块,该转接块上设有用于与该集成歧管的该输出面对接安装的输入面,该转接块的该输入面上的气体输入口与该集成歧管上的该输出口一一对应且对接密封安装,该转接块的外侧面还设有一个或多个腔室输出口和旁路抽气口,该转接块内部设有多路气体管道以使一个或多个该气体输出口与一个或多个腔室输出口或旁路抽气口相连通。In one embodiment, preferably, the gas distribution device further includes an adapter block, and the adapter block is provided with an input surface for connecting with the output surface of the integrated manifold, and the input surface of the adapter block The gas input port on the surface is in one-to-one correspondence with the output port on the integrated manifold and is installed in a butt joint seal. The outer surface of the adapter block is also provided with one or more chamber output ports and bypass gas extraction ports. Multiple gas pipelines are arranged inside the connection block so that one or more gas outlets communicate with one or more chamber outlets or bypass suction ports.
在一实施例中,优选地,该气体分配装置还包括多个转接块,该多个转接块的该气体输入口、该腔室输出口、该旁路抽气口以及各自内部的气体管道连通关系不同。In one embodiment, preferably, the gas distribution device further includes a plurality of adapter blocks, the gas input port, the chamber output port, the bypass gas inlet, and the respective internal gas pipelines of the plurality of adapter blocks Connectivity is different.
在一实施例中,优选地,该转接块的该输入面上的气体输入口与该集成歧管上的该输出口之间设有密封圈。In one embodiment, preferably, a sealing ring is provided between the gas input port on the input surface of the adapter block and the gas output port on the integrated manifold.
在一实施例中,可选地,该集成歧管与该转接块的形状均为长方体。In an embodiment, optionally, the shape of the integrated manifold and the adapter block are both cuboid.
附图说明Description of drawings
在结合以下附图阅读本公开的实施例的详细描述之后,能够更好地理解本发明的上述特征和优点。在附图中,各组件不一定是按比例绘制,并且具有类似的相关特性或特征的组件可能具有相同或相近的附图标记。The above-mentioned features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.
图1是根据本发明的一实施例绘示的气体分配装置的装置结构示意图;FIG. 1 is a schematic diagram of the device structure of a gas distribution device according to an embodiment of the present invention;
图2A是根据本发明的一实施例绘示的气体分配装置中集成歧管的装置结构透视图;2A is a perspective view of the device structure of the integrated manifold in the gas distribution device according to an embodiment of the present invention;
图2B是根据本发明的一实施例绘示的气体分配装置中集成歧管的装置结构轴测图;2B is an isometric view of the device structure of the integrated manifold in the gas distribution device according to an embodiment of the present invention;
图3是根据本发明的一实施例绘示的气体分配装置中转接块的装置结构示意图;以及Fig. 3 is a device structure diagram of an adapter block in a gas distribution device according to an embodiment of the present invention; and
图4是根据本发明的一实施例绘示的气体分配装置的装置结构爆炸图。Fig. 4 is an exploded view of the device structure of the gas distribution device according to an embodiment of the present invention.
为清楚起见,以下给出附图标记的简要说明:For clarity, a brief description of the reference numbers is given below:
101集成歧管101 Integrated Manifold
102第一进气面102 The first air intake surface
103第二进气面103 Second air intake surface
104转接块104 transfer block
200集成歧管200 Integrated Manifold
201第一进气面201 The first air intake surface
2011第一进气口2011 first air intake
202输出面202 output side
2021输出口2021 outlet
203阀体面203 valve decent
2031阀口2031 valve port
204第二进气面204 Second air intake surface
2041第二进气口2041 Second air intake
300转接块300 transfer block
301输入面301 input surface
302气体输入口302 gas input port
303腔室输出口303 chamber outlet
304旁路抽气口304 bypass air inlet
401集成歧管401 Integrated Manifold
402密封圈402 sealing ring
403转接块403 transfer block
具体实施方式Detailed ways
以下由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。虽然本发明的描述将结合优选实施例一起介绍,但这并不代表此发明的特征仅限于该实施方式。恰恰相反,结合实施方式作发明介绍的目的是为了覆盖基于本发明的权利要求而有可能延伸出的其它选择或改造。为了提供对本发明的深度了解,以下描述中将包含许多具体的细节。本发明也可以不使用这些细节实施。此外,为了避免混乱或模糊本发明的重点,有些具体细节将在描述中被省略。The implementation of the present invention is illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the invention will be presented in conjunction with a preferred embodiment, it is not intended that the features of the invention be limited to that embodiment only. On the contrary, the purpose of introducing the invention in conjunction with the embodiments is to cover other options or modifications that may be extended based on the claims of the present invention. The following description contains numerous specific details in order to provide a thorough understanding of the present invention. The invention may also be practiced without these details. Also, some specific details will be omitted from the description in order to avoid obscuring or obscuring the gist of the present invention.
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.
另外,在以下的说明中所使用的“上”、“下”、“左”、“右”、“顶”、“底”、“水平”、“垂直”应被理解为该段以及相关附图中所绘示的方位。此相对性的用语仅是为了方便说明之用,其并不代表其所叙述的装置需以特定方位来制造或运作,因此不应理解为对本发明的限制。In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following descriptions should be understood The orientation shown in the figure. The relative terms are used for convenience of description only, and do not imply that the device described therein must be manufactured or operated in a specific orientation, and thus should not be construed as limiting the present invention.
能理解的是,虽然在此可使用用语“第一”、“第二”、“第三”等来叙述各种组件、区域、层和/或部分,这些组件、区域、层和/或部分不应被这些用语限定,且这些用语仅是用来区别不同的组件、区域、层和/或部分。因此,以下讨论的第一组件、区域、层和/或部分可在不偏离本发明一些实施例的情况下被称为第二组件、区域、层和/或部分。It can be understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and/or sections, these components, regions, layers and/or sections It should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and/or sections. Thus, a first component, region, layer and/or section discussed below could be termed a second component, region, layer and/or section without departing from some embodiments of the present invention.
为了克服现有技术存在的上述缺陷,本领域亟需一种气体分配装置,用于集成多种反应气体及惰性气体的进气,管路排布简单,可以大幅降低阀块、加热带等设备耗材的成本,解决沉积设备因空间局限而不易拓展的缺陷,满足工艺反应的使用需求。In order to overcome the above-mentioned defects in the prior art, there is an urgent need for a gas distribution device in this field, which is used to integrate the intake of various reactive gases and inert gases. The cost of consumables solves the defect that deposition equipment is not easy to expand due to space limitations, and meets the needs of process reactions.
图1是根据本发明的一实施例绘示的气体分配装置的装置结构示意图。FIG. 1 is a schematic diagram of a device structure of a gas distribution device according to an embodiment of the present invention.
请参照图1,本发明提供的气体分配装置,包括:形状为多面立方体的集成歧管101。Please refer to FIG. 1 , the gas distribution device provided by the present invention includes: an integrated manifold 101 in the shape of a multi-faceted cube.
图2A是根据本发明的一实施例绘示的气体分配装置中集成歧管的装置结构透视图。2A is a perspective view of the device structure of the integrated manifold in the gas distribution device according to an embodiment of the present invention.
可以参照图2A,本发明提供的气体分配装置中,形状为多面立方体的集成歧管200可以包括多个进气面和一个输出面202,例如在该实施例中,该多个进气面可以是第一进气面201和第二进气面204,第一进气面201、第二进气面204及该输出面202上分别设有多个第一进气口2011、第二进气口2041和多个输出口2021,该集成歧管200的内部设有多条相互独立的气道以使得该进气面上的每个第一进气口2011或第二进气口2041都与该输出面上的一个输出口2021相连通。Referring to FIG. 2A, in the gas distribution device provided by the present invention, the integrated manifold 200 in the shape of a multi-sided cube may include a plurality of inlet surfaces and an output surface 202. For example, in this embodiment, the plurality of inlet surfaces may be It is the first air intake surface 201 and the second air intake surface 204, and the first air intake surface 201, the second air intake surface 204, and the output surface 202 are respectively provided with a plurality of first air intake ports 2011 and second air intake surfaces. Inlet 2041 and a plurality of output ports 2021, the interior of the integrated manifold 200 is provided with a plurality of mutually independent air passages so that each first air inlet 2011 or second air inlet 2041 on the air inlet surface is connected with An output port 2021 on the output surface is connected.
优选地,在一实施例中,第一进气口2011及第二进气口2041与输出口2021一一对应,每路进气均独立地由集成歧管200输出。Preferably, in an embodiment, the first air inlet 2011 and the second air inlet 2041 correspond to the output port 2021 one by one, and each air inlet is independently output by the integrated manifold 200 .
图2B是根据本发明的一实施例绘示的气体分配装置中集成歧管的装置结构轴测图。2B is an isometric view of the device structure of the integrated manifold in the gas distribution device according to an embodiment of the present invention.
可以结合参考图2A和图2B,也可以结合图1,在该实施例中,该集成歧管200第一进气面201上的四个第一进气口2011与第二进气面204上的四个第二进气口2041各自分别通过集成歧管200内部的气道与各自一一对应的输出口2021相连通,因而由图2B可以看出,该实施例中一共设有8个输出口2021。2A and FIG. 2B may be combined with reference to FIG. 1 , in this embodiment, the four first air inlets 2011 on the first air intake surface 201 of the integrated manifold 200 are connected to the four first air inlets 2011 on the second air intake surface 204 Each of the four second air inlets 2041 of the integrated manifold 200 communicates with the respective one-to-one corresponding output ports 2021 through the air channels inside the integrated manifold 200. Therefore, it can be seen from FIG. 2B that there are a total of 8 output ports in this embodiment. Mouth 2021.
进一步地,在一优选的实施例中,可以继续参考图2A,本发明提供的气体分配装置中形状为多面立方体的集成歧管200还可以包括设有多个阀口2031的阀体面203,每个该第一进气口2011、第二进气口2041与该输出口2021均通过各自的该气道连接至对应的阀口2031,该阀口上设有多通阀块,多通阀块图2A中未有示出,用于控制每个进气口与对应输出口的连通关断。Further, in a preferred embodiment, referring to FIG. 2A , the integrated manifold 200 in the shape of a multi-sided cube in the gas distribution device provided by the present invention may also include a valve body surface 203 provided with a plurality of valve ports 2031 , each The first air inlet 2011, the second air inlet 2041 and the output port 2021 are all connected to the corresponding valve port 2031 through their respective air passages, and the valve port is provided with a multi-way valve block, the multi-way valve block diagram Not shown in 2A, it is used to control the connection and shutdown of each air inlet and the corresponding output port.
优选地,如图2A、2B所示,该阀体面203在该多面立方体上的位置相邻于该进气面201和该输出面202。在该设置下,以单路气道为例,第一进气面201上第一进气口2011可以通过气道容易地连接至阀体面203上的阀口2031,再由阀口2031由气道连接至输出面202的输出口2021,从而可以通过设置在阀口2031上的阀块控制每个第一进气口2011和对应输出口2021的连通关断。对于第二进气口2041也可以进行类似设置。Preferably, as shown in FIGS. 2A and 2B , the position of the valve body surface 203 on the multi-sided cube is adjacent to the inlet surface 201 and the output surface 202 . Under this setting, taking the single-way air channel as an example, the first air inlet 2011 on the first air inlet surface 201 can be easily connected to the valve port 2031 on the valve body surface 203 through the air channel, and then the valve port 2031 is connected to the valve port 2031 by the air channel. The channel is connected to the output port 2021 of the output surface 202, so that the connection and closure of each first air inlet 2011 and the corresponding output port 2021 can be controlled by a valve block arranged on the valve port 2031 . Similar settings can also be made for the second air inlet 2041 .
容易理解地,因为集成歧管200内部气道结构的独立性,该集成歧管200可以为一体成型,也可以由多个部件拼装而成。It is easy to understand that, because of the independence of the internal air passage structure of the integrated manifold 200, the integrated manifold 200 can be integrally formed, or assembled from multiple components.
在一优选的实施例中,同一进气面用于输入相同类别的气体,不同类别的气体通过不同的进气面输入该集成歧管,该不同类别的气体包括用于半导体薄膜沉积工艺的反应气体及惰性气体。In a preferred embodiment, the same gas inlet surface is used to input the same type of gas, and different types of gases are input into the integrated manifold through different gas inlet surfaces, and the different types of gases include the reactions used in the semiconductor thin film deposition process gases and inert gases.
可以回到图1,在该实施例中,反应气体例如ALD工艺中的前驱气体可以通过第一进气面102上的四个第一进气口输入,而惰性气体可以都通过第二进气面103输入。Returning to FIG. 1, in this embodiment, the reaction gas such as the precursor gas in the ALD process can be input through four first gas inlets on the first gas inlet surface 102, and the inert gas can all be input through the second gas inlet Face 103 input.
在这样的设置下,不同类别的气体的输入面位置不一样,相同类别的气体输出管路集中在同一面且朝向同一方向,可以便于例如加热带、保温棉等的统一布置,节省材料及占用空间。Under such a setting, the positions of the input surfaces of different types of gases are different, and the output pipelines of the same type of gases are concentrated on the same surface and face the same direction, which can facilitate the unified arrangement of heating belts, insulation cotton, etc., saving materials and occupancy space.
与此同时,该进气面上的不同进气口用于输入不同气体。例如,图1实施例中第一进气面102上的四个进气口可以用于输入四种不同的反应气体,从而满足工艺的需要。At the same time, different air inlets on the air inlet face are used to input different gases. For example, the four gas inlets on the first gas inlet surface 102 in the embodiment of FIG. 1 can be used to input four different reaction gases, so as to meet the requirements of the process.
如图1所示,在一实施例中,本发明提供的该气体分配装置还包括转接块104。As shown in FIG. 1 , in an embodiment, the gas distribution device provided by the present invention further includes an adapter block 104 .
图3是根据本发明的一实施例绘示的气体分配装置中转接块的装置结构示意图。Fig. 3 is a schematic diagram of the device structure of the adapter block in the gas distribution device according to an embodiment of the present invention.
请参照图3,该转接块300上设有用于与该集成歧管的该输出面对接安装的输入面301,该转接块300的该输入面上的气体输入口302与该集成歧管上的该输出口一一对应且对接密封安装,该转接块300的外侧面还设有一个或多个腔室输出口303和旁路抽气口304。Please refer to FIG. 3 , the adapter block 300 is provided with an input surface 301 for butt joint installation with the output surface of the integrated manifold, and the gas input port 302 on the input surface of the adapter block 300 is connected to the integrated manifold. The output ports on the tubes are one-to-one corresponding and butt-tightly installed, and the outer surface of the adapter block 300 is also provided with one or more chamber output ports 303 and bypass air suction ports 304 .
容易理解地,由气体输入口302进入转接块300的气体可以通过腔室输出口303输出至反应腔室中,也可以通过旁路抽气口304输出至旁路的抽气端管路。It is easy to understand that the gas that enters the adapter block 300 through the gas input port 302 can be output to the reaction chamber through the chamber output port 303 , or can be output to the suction end pipeline of the bypass through the bypass gas extraction port 304 .
如图3所示,该转接块300内部设有多路气体管道以使一个或多个该气体输出口302与一个或多个腔室输出口303或旁路抽气口304相连通,从而可以通过转接块将反应气体输送入反应腔室或旁路抽气排出。As shown in FIG. 3 , multiple gas pipelines are provided inside the adapter block 300 so that one or more gas outlets 302 communicate with one or more chamber outlets 303 or bypass suction ports 304, so that The reaction gas is delivered into the reaction chamber through the adapter block or exhausted by bypass.
图4是根据本发明的一实施例绘示的气体分配装置的装置结构爆炸图。Fig. 4 is an exploded view of the device structure of the gas distribution device according to an embodiment of the present invention.
如图4所示,在一实施例中,本发明提供的气体分配装置中的该转接块403的该输入面上的气体输入口与该集成歧管401上的该输出口之间设有密封圈402,从而确保连接处的密封。As shown in Figure 4, in one embodiment, in the gas distribution device provided by the present invention, between the gas input port on the input surface of the adapter block 403 and the output port on the integrated manifold 401 The sealing ring 402 ensures the sealing of the connection.
与此同时,优选地,本发明提供的气体分配装置可以设有多个转接块,该多个转接块的该气体输入口、该腔室输出口、该旁路抽气口以及各自内部的气体管道连通关系不同。At the same time, preferably, the gas distribution device provided by the present invention can be provided with a plurality of adapter blocks, the gas input port, the chamber output port, the bypass gas inlet, and the respective internal ports of the plurality of adapter blocks The connection relationship of the gas pipeline is different.
例如,可以根据实际需要设计转接块的气体输入口,配套的集成歧管有几路出口就在转接块上配套设计几路气体输入口。For example, the gas input port of the adapter block can be designed according to the actual needs, and the matching integrated manifold has several outlets, and several gas input ports are designed on the adapter block.
再如,对于不会发生反应的几种反应气体或惰性可以合并为一路汇合送进腔室或去旁路抽气。而对于会发生反应的多种气体,而当前转接块只配置有一个腔室输出口和一个旁路抽气口,即只设置有一路出口进腔和一路进旁抽时,就可以根据实际的使用需要按需更换符合要求的转接块即可。For another example, for several reactive gases or inert gases that will not react, they can be combined into one way and fed into the chamber or bypassed for pumping. For various gases that will react, and the current adapter block is only equipped with a chamber output port and a bypass suction port, that is, when there is only one outlet into the chamber and one side suction, it can be used according to the actual situation. Just use the adapter block that meets the requirements and replace it as needed.
除此以外,在本发明提供的气体分配装置中,多种气体的汇合只发生在转接块的位置,因而反应物污染也只会在转接块的位置产生,而转接块的更换安装非常便捷,就可以轻易地去除污染物,提升工艺操作的便捷性。In addition, in the gas distribution device provided by the present invention, the confluence of various gases only occurs at the position of the adapter block, so the contamination of the reactants will only occur at the position of the adapter block, and the replacement and installation of the adapter block Very convenient, you can easily remove pollutants, improve the convenience of process operation.
需要说明的是,以上关于转接块的说明仅作为本发明优选实施例的阐述,而非用于限制本发明的保护范围。本发明提供的气体分配装置中也可以不设置转接块与密封圈结构,直接通过集成歧管的输出连接至进腔室和进旁路抽气的管路实现多种气体的输出。It should be noted that the above description about the adapter block is only used as an illustration of a preferred embodiment of the present invention, and is not used to limit the protection scope of the present invention. In the gas distribution device provided by the present invention, the adapter block and the sealing ring structure may not be provided, and the output of various gases is directly connected to the inlet chamber and the bypass suction pipeline through the output of the integrated manifold.
在以上实施例中,本发明提供的气体分配装置的该集成歧管与该转接块的形状均为长方体。容易理解地,该处长方体的具体形状也仅做示例性的说明,可以根据实际需要设置多面体的集成歧管,从而将同类别气体安排至同一面进行输入。In the above embodiments, the shape of the integrated manifold and the adapter block of the gas distribution device provided by the present invention are both cuboid. It is easy to understand that the specific shape of the rectangular parallelepiped here is only an exemplary illustration, and a polyhedral integrated manifold can be provided according to actual needs, so that the same type of gas can be arranged on the same side for input.
由以上说明可以看出,在本发明提供的气体分配装置结构可以将不同反应气体的输入位置安排在一起,方便加热带等装置配件的排布。与此同时,该气体分配装置可以使得沉积设备的管路排布有规律,即便为后续的多种使用可能性多做预留准备,拓展设计方便且空间占用有限,且该气体分配装置为集成块结构,若需对气体进行加热,只需在集中输入处增设有限的加热棒、热偶或保温棉,节省了设备耗材,进而降低了工艺成本。It can be seen from the above description that in the structure of the gas distribution device provided by the present invention, the input positions of different reaction gases can be arranged together, which facilitates the arrangement of device accessories such as heating belts. At the same time, the gas distribution device can make the pipeline arrangement of the deposition equipment regular, even if more preparations are made for subsequent use possibilities, the expansion design is convenient and the space occupation is limited, and the gas distribution device is an integrated Block structure, if the gas needs to be heated, it only needs to add limited heating rods, thermocouples or insulation cotton at the centralized input, which saves equipment consumables and reduces process costs.
提供对本公开的先前描述是为使得本领域任何技术人员皆能够制作或使用本公开。对本公开的各种修改对本领域技术人员来说都将是显而易见的,且本文中所定义的普适原理可被应用到其他变体而不会脱离本公开的精神或范围。由此,本公开并非旨在被限定于本文中所描述的示例和设计,而是应被授予与本文中所公开的原理和新颖性特征相一致的最广范围。The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
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