CN116569485A - Hybrid filter, multiplexer, high frequency module, and communication device - Google Patents

Abstract

A hybrid filter (10) is provided with a module substrate (80) having a main surface (80 a) and a main surface (80 b) which face each other, elastic wave resonators (P1 and P2) arranged on the module substrate (80), inductors (L1-L3) arranged on the module substrate (80), and a capacitor (C3) arranged on the module substrate (80), wherein the passband of the hybrid filter (10) is larger than the resonance bandwidth of the elastic wave resonators (P1 and P2), a first circuit element which is one of the elastic wave resonators (P1 and P2), the inductors (L1-L3), and the capacitor (C3) is arranged on the main surface (80 a), and a second circuit element which is the other of the elastic wave resonators (P1 and P2), the inductors (L1-L3), and the capacitor (C3) is arranged on the main surface (80 b).

Description

Hybrid filter, multiplexer, high frequency module, and communication device

Technical Field

The invention relates to a hybrid filter, a multiplexer, a high frequency module and a communication device.

Background

Patent document 1 discloses a hybrid elastic LC filter including an elastic resonator (elastic wave resonator), an inductor, and a capacitor. Accordingly, a relatively wide passband can be achieved, and strict out-of-band blocking specifications can be satisfied.

Patent document 1: japanese patent laid-open No. 2020-14204

However, the hybrid elastic LC filter disclosed in patent document 1 has a problem in that the number of components is large and the size thereof is large because the filter is a filter in which an elastic wave resonator, an inductor, and a capacitor are combined. In addition, if the mounting density is increased for downsizing, there is a problem that unwanted coupling between components occurs, and the pass characteristics of the filter deteriorate.

Disclosure of Invention

The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a small hybrid filter, a multiplexer, a high-frequency module, and a communication device, each of which includes an elastic wave resonator, an inductor, and a capacitor, and in which deterioration of filter characteristics is suppressed.

A hybrid filter according to an aspect of the present invention includes: a substrate having a first main surface and a second main surface which are opposed to each other; more than one elastic wave harmonic oscillator arranged on the substrate; one or more first inductors disposed on the substrate; and one or more first capacitors disposed on the substrate, wherein a passband bandwidth of the hybrid filter is larger than a resonance bandwidth of the one or more elastic wave resonators, a first circuit element which is one of the one or more elastic wave resonators, the one or more first inductors, and the one or more first capacitors is disposed on the first main surface, and a second circuit element which is the other of the one or more elastic wave resonators, the one or more first inductors, and the one or more first capacitors is disposed on the second main surface.

According to the present invention, a small hybrid filter, a multiplexer, a high-frequency module, and a communication device, each including an elastic wave resonator, an inductor, and a capacitor, in which degradation of filter characteristics is suppressed, can be provided.

Drawings

Fig. 1 is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

Fig. 2A is a diagram showing an example of a circuit configuration of the first hybrid filter according to the embodiment.

Fig. 2B is a diagram showing an example of a circuit configuration of the second hybrid filter according to the embodiment.

Fig. 2C is a diagram showing an example of a circuit configuration of the LC filter according to the embodiment.

Fig. 3A is a schematic plan view of the high-frequency module of embodiment 1.

Fig. 3B is a schematic sectional structure of the high-frequency module of embodiment 1.

Fig. 4 is a schematic plan view of the high-frequency module of embodiment 2.

Fig. 5 is a schematic plan view of the high-frequency module of embodiment 3.

Fig. 6 is a schematic sectional structure of the high-frequency module of embodiment 4.

Fig. 7A is a schematic plan view of a part of the high-frequency module of modification 1.

Fig. 7B is a schematic plan view of a part of the high-frequency module of modification 2.

Fig. 7C is a schematic plan view of a part of the high-frequency module of modification 3.

Fig. 8 is a circuit configuration diagram of the high frequency module and the communication device of embodiment 5.

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail. The embodiments described below are embodiments showing general or specific examples. The numerical values, shapes, materials, components, arrangement of components, connection modes, and the like shown in the following embodiments are examples, and do not limit the present invention. Among the constituent elements in the following embodiments and modifications, constituent elements not described in the independent claims are described as arbitrary constituent elements. The sizes and ratios of the sizes of the constituent elements shown in the drawings are not necessarily strict. In the drawings, the same reference numerals are attached to the substantially identical structures, and overlapping descriptions may be omitted or simplified.

In the following, terms indicating the relationship between elements such as parallel and vertical, terms indicating the shape of elements such as rectangular, and numerical ranges are not only meant to be strict, but also include practically equivalent ranges, for example, differences of about several percent.

Hereinafter, "a is disposed on the first main surface of the substrate" means that a is not only directly mounted on the first main surface but also a is disposed in the first main surface side space out of the first main surface side space and the second main surface side space partitioned by the substrate. In other words, a is attached to the first main surface via another circuit element, an electrode, or the like.

In the following, the term "connected" includes not only a case of direct connection by a connection terminal and/or a wiring conductor, but also a case of electrical connection via other circuit components. The term "connected between a and B" means that a and B are connected to both a and B.

In the following figures, the x-axis and the y-axis are axes orthogonal to each other on a plane parallel to the main surface of the module substrate. The z-axis is an axis perpendicular to the main surface of the module substrate, and the positive direction thereof indicates the upward direction and the negative direction thereof indicates the downward direction.

In addition, in the module structure of the present disclosure, "top view" means that an object is orthographically projected from the positive z-axis side to the xy-plane for viewing. The term "the component is disposed on the main surface of the substrate" includes a case where the component is disposed above the main surface without being in contact with the main surface of the substrate, and a case where a part of the component is buried in the substrate from the main surface side, in addition to the component being disposed on the main surface in contact with the main surface of the substrate.

In addition, in A, B and C mounted on the substrate, when viewed in plan of the substrate (or the main surface of the substrate), the arrangement of C between a and B means that at least one of a plurality of line segments connecting any point in a and any point in B passes through the region of C when viewed in plan of the substrate.

Hereinafter, the "transmission path" refers to a transmission line including a wiring through which a high-frequency transmission signal propagates, an electrode directly connected to the wiring, a terminal directly connected to the wiring or the electrode, and the like. The "reception path" refers to a transmission line including a wiring on which a high-frequency reception signal propagates, an electrode directly connected to the wiring, a terminal directly connected to the wiring or the electrode, and the like.

(embodiment)

[1 ] the structure of the high-frequency module 1 and the communication device 5 according to the embodiment ]

Fig. 1 is a circuit configuration diagram of a high-frequency module 1 and a communication device 5 according to an embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

The RFIC3 is an RF signal processing circuit that processes a high-frequency signal transmitted and received by the antenna 2. Specifically, the RFIC3 performs signal processing on a reception signal input via the reception path of the high frequency module 1 by down-conversion or the like, and outputs the reception signal generated by the signal processing to the BBIC4. The RFIC3 outputs a high-frequency transmission signal processed based on the signal input from the BBIC4 to the transmission path of the high-frequency module 1.

The BBIC4 is a circuit that performs data processing using a signal of a frequency lower than the high-frequency signal transmitted in the high-frequency module 1. The signal processed by the BBIC4 is used, for example, as an image signal for image display or as a sound signal for communication via a speaker.

The RFIC3 also has a function as a control unit for controlling connection of the switches 50 and 51 included in the high-frequency module 1 based on which of the high-frequency module 1 is used for transmission and reception and a communication band (frequency band) to be used. Specifically, the RFIC3 switches the connection of the switches 50 and 51 included in the high frequency module 1 by a control signal (not shown). The control unit may be provided outside the RFIC3, for example, in the high-frequency module 1 or the BBIC4.

The RFIC3 also has a function as a control unit for controlling the gain of the power amplifiers 30 and 31 included in the high-frequency module 1, and the power supply voltage Vcc and bias voltage Vbias supplied to the power amplifiers 30 and 31.

The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1, radiates a high-frequency signal output from the high-frequency module 1, and receives a high-frequency signal from the outside and outputs the high-frequency signal to the high-frequency module 1.

In the communication device 5 of the present embodiment, the antenna 2 and the BBIC4 are not essential components.

Next, a detailed configuration of the high-frequency module 1 will be described.

As shown in fig. 1, the high-frequency module 1 includes an antenna connection terminal 100, reception output terminals 120 and 121, transmission input terminals 130 and 131, hybrid filters 10 and 11, switches 50 and 51, filters 15, 16, 17 and 18, matching circuits 45, 46, 47 and 48, low-noise amplifiers 20 and 21, and power amplifiers 30 and 31.

The antenna connection terminal 100 is an antenna common terminal connected to the antenna 2.

The hybrid filters 10 and 11 are examples of the first hybrid filter and the second hybrid filter, respectively, and are filters including one or more elastic wave resonators, one or more inductors, and one or more capacitors. One terminal of the hybrid filter 10 is connected to the antenna connection terminal 100, and the other terminal is connected to the switch 50. One terminal of the hybrid filter 11 is connected to the antenna connection terminal 100, and the other terminal is connected to the switch 51. Hybrid filters 10 and 11 form a multiplexer 90.

The elastic wave resonator is, for example, an elastic wave resonator using SAW (Surface Acoustic Wave: surface acoustic wave), or an elastic wave resonator using BAW (Bulk Acoustic Wave: bulk acoustic wave).

The multiplexer 90 may be configured to divide a high-frequency signal of at least two different frequency bands (communication bands). From this point of view, the number of filters constituting the multiplexer 90 may be two or more.

Fig. 2A is a diagram showing an example of a circuit configuration of the hybrid filter 10 according to the embodiment. Fig. 2B is a diagram showing an example of the circuit configuration of hybrid filter 11 according to the embodiment.

As shown in fig. 2A, the hybrid filter 10 includes elastic wave resonators P1 and P2, a capacitor C3, and inductors L1, L2, and L3.

The inductor L3 and the capacitor C3 constitute an LC parallel resonant circuit. The series connection circuit of the elastic wave resonator P1 and the inductor L1 is arranged between a node on a path connecting the input/output terminal 101 and the LC parallel resonant circuit and a ground line. The series connection circuit of the elastic wave resonator P2 and the inductor L2 is arranged between a node on a path connecting the input/output terminal 102 and the LC parallel resonant circuit and a ground line. The elastic wave resonators P1 and P2 form an elastic wave resonator A1, and are formed into a single chip, for example. Further, the plurality of elastic wave resonators are defined as being formed on one piezoelectric substrate in a single chip manner, or contained in one package.

In the above configuration, the resonance frequency of the LC parallel resonant circuit including the inductor L3 and the capacitor C3, and the resonance frequency and antiresonant frequency of the elastic wave resonators P1 and P2 are adjusted to form the passband and attenuation band of the hybrid filter 10. The LC parallel resonant circuit including the inductor L3 and the capacitor C3 forms a passband of the hybrid filter 10, and the elastic wave resonators P1 and P2 form attenuation poles.

As shown in fig. 2B, the hybrid filter 11 has the same circuit configuration as the hybrid filter 10, and includes elastic wave resonators P5 and P6, a capacitor C4, and inductors L4, L5, and L6.

The inductor L4 and the capacitor C4 constitute an LC parallel resonant circuit. The series connection circuit of the elastic wave resonator P5 and the inductor L5 is arranged between a node on a path connecting the input/output terminal 103 and the LC parallel resonant circuit and a ground line. The series connection circuit of the elastic wave resonator P6 and the inductor L6 is arranged between a node on a path connecting the input/output terminal 104 and the LC parallel resonant circuit and a ground line. The elastic wave resonators P5 and P6 form an elastic wave resonator A2, and are formed into a single chip, for example.

In the above configuration, the resonance frequency of the LC parallel resonant circuit including the inductor L4 and the capacitor C4, and the resonance frequency and antiresonant frequency of the elastic wave resonators P5 and P6 are adjusted to form the passband and attenuation band of the hybrid filter 11. The LC parallel resonant circuit including the inductor L4 and the capacitor C4 forms a passband of the hybrid filter 11, and the elastic wave resonators P5 and P6 form attenuation poles.

In other words, the hybrid filters 10 and 11 can ensure a wide passband that cannot be achieved by the elastic wave resonator by the LC circuit, and can ensure a steep attenuation slope that cannot be achieved by the LC circuit by the elastic wave resonator.

From this point of view, the passband bandwidth of the hybrid filter 10 is larger than the resonance bandwidths of the elastic wave resonators P1 and P2. The passband bandwidth of the hybrid filter 11 is larger than the resonance bandwidths of the elastic wave resonators P5 and P6.

In the present embodiment, the resonance bandwidth of the elastic wave resonator is defined as the difference between the antiresonant frequency and the resonant frequency of the elastic wave resonator. In addition, the specific resonance bandwidth is defined as a ratio of the above resonance bandwidth divided by the anti-resonance frequency and the median of the resonance frequencies. It is known that general SAW resonators and BAW resonators have a frequency band of 0.1 to 10GHz and a specific resonance bandwidth of 3 to 4%.

The circuit configuration of the hybrid filter according to the present embodiment is not limited to the circuit configurations of the hybrid filters 10 and 11 described above. The hybrid filter of the present embodiment may be provided with one or more elastic wave resonators, one or more inductors, and one or more capacitors, and the passband bandwidth of the hybrid filter may be larger than the resonance bandwidth of the elastic wave resonators. In addition, as the circuit configuration of the hybrid filter of the present embodiment, no switch is arranged between the elastic wave resonator and the LC circuit. For example, in the hybrid filter 10, no switch is interposed between the LC parallel resonant circuit including the inductor L3 and the capacitor C3 and the elastic wave resonator P1 and between the LC parallel resonant circuit and the elastic wave resonator P2.

The filter 15 is a reception filter connected between the switch 50 and the matching circuit 45. The filter 16 is a transmission filter connected between the switch 50 and the matching circuit 46. The filter 17 is a reception filter connected between the switch 51 and the matching circuit 47. The filter 18 is a transmission filter connected between the switch 51 and the matching circuit 48. Each of the filters 15 to 18 may be an LC filter including an inductor and a capacitor.

Fig. 2C is a diagram showing an example of a circuit configuration of the filter 15 according to the embodiment. As shown in fig. 2C, the filter 15 includes capacitors C6, C7, C8, and C9, and inductors L7 and L8. The filters 16 to 18 have the same circuit configuration as the filter 15.

The inductor L7 and the capacitor C7 constitute an LC parallel resonant circuit. The capacitor C6 is arranged in series on a path connecting the input/output terminal 105 and the LC parallel resonant circuit. The series resonant circuit of the capacitor C8 and the inductor L8 is arranged between a node on a path connecting the input/output terminal 105 and the LC parallel resonant circuit and a ground line. The capacitor C9 is arranged between a node on a path connecting the input/output terminal 106 and the LC parallel resonant circuit and a ground line.

In the above configuration, the pass band and the attenuation band of the filter 15 are formed by adjusting the resonance frequency of the LC parallel resonant circuit constituted by the inductor L7 and the capacitor C7 and the resonance frequency of the LC series resonant circuit constituted by the inductor L8 and the capacitor C8.

In other words, the filter 15 can secure a passband wider than the LC parallel resonant circuit and the LC series resonant circuit, and can secure high attenuation in an attenuation band away from the passband.

The circuit configuration of the filters 15 to 18 of the present embodiment is not limited to the circuit configuration of the filter 15 described above. The filters 15 to 18 of the present embodiment may be provided with one or more inductors and one or more capacitors, and may not be provided with an elastic wave resonator.

The low noise amplifier 20 amplifies the reception signal of the first communication band with low noise and outputs the amplified signal to the reception output terminal 120. The low noise amplifier 21 amplifies the reception signal of the second communication band with low noise and outputs the amplified signal to the reception output terminal 121.

The power amplifier 30 amplifies a transmission signal of the first communication band inputted from the transmission input terminal 130. The power amplifier 31 amplifies a transmission signal of the second communication band inputted from the transmission input terminal 131.

The matching circuit 45 is connected between the low noise amplifier 20 and the filter 15, and performs impedance matching between the low noise amplifier 20 and the filter 15. The matching circuit 46 is connected between the power amplifier 30 and the filter 16, and obtains impedance matching between the power amplifier 30 and the filter 16. The matching circuit 47 is connected between the low noise amplifier 21 and the filter 17, and performs impedance matching between the low noise amplifier 21 and the filter 17. The matching circuit 48 is connected between the power amplifier 31 and the filter 18, and obtains impedance matching between the power amplifier 31 and the filter 18.

The switch 50 has a common terminal and two select terminals. The common terminal of the switch 50 is connected to the hybrid filter 10. One selection terminal of the switch 50 is connected to the filter 15, and the other selection terminal of the switch 50 is connected to the filter 16. In other words, the switch 50 is a time division duplex (TDD: time Division Duplex) switch that switches the connection of the hybrid filter 10 and the low noise amplifier 20 and the connection of the hybrid filter 10 and the power amplifier 30. The switch 50 is constituted by, for example, an SPDT (Single Pole Double Throw: single pole double throw) switch circuit.

The switch 51 has a common terminal and two selection terminals. The common terminal of the switch 51 is connected to the hybrid filter 11. One selection terminal of the switch 51 is connected to the filter 17, and the other selection terminal of the switch 51 is connected to the filter 18. In other words, the switch 51 is a TDD switch that switches the connection of the hybrid filter 11 and the low noise amplifier 21 and the connection of the hybrid filter 11 and the power amplifier 31. The switch 51 is constituted by, for example, an SPDT-type switching circuit.

The filters 15 and 16 may be one TDD filter, and may be connected between the hybrid filter 10 and the switch 50. The filters 17 and 18 may be one TDD filter, and may be connected between the hybrid filter 11 and the switch 51. In addition, the filters 15 to 18 and the matching circuits 45 to 48 may be omitted.

The filters 15 and 16 may be one duplexer for transmitting in a frequency division duplex (FDD: frequency Division Duplex) system. At this time, the switch 50 is not required. The filters 17 and 18 may be a single duplexer for transmitting in the FDD system. At this time, the switch 51 is not required.

The low noise amplifiers 20 and 21 and the switches 50 and 51 may be formed in one semiconductor IC. The semiconductor IC is constituted by, for example, CMOS. Specifically, the method is formed by an SOI process. This enables the semiconductor IC to be manufactured at low cost. The semiconductor IC may be made of at least one of GaAs, siGe, and GaN. Thus, a high-frequency signal having high-quality amplification performance and noise performance can be output.

According to the above circuit configuration, the high-frequency module 1 can transmit either the transmission signal or the reception signal of the first communication band alone, or can transmit either the transmission signal or the reception signal of the second communication band alone. The high frequency module 1 can transmit the transmission signal or the reception signal of the first communication band and the transmission signal or the reception signal of the second communication band at the same time.

The high frequency module 1 of the present embodiment may include at least the multiplexer 90, the low noise amplifiers 20 and 21, and the matching circuits 45 and 47 among the circuit components and the circuit elements shown in fig. 1. Alternatively, the high-frequency module 1 of the present embodiment may include at least the multiplexer 90 and the switches 50 and 51 of the circuit components and the circuit elements shown in fig. 1.

Here, the hybrid filter described above is a filter in which an elastic wave resonator, an inductor, and a capacitor are combined, and therefore has a problem in that the number of components is large and the size is large. In addition, if the mounting density is increased for downsizing, there is a problem that unwanted coupling between components occurs, and the pass characteristics of the hybrid filter deteriorate.

In contrast, the following describes the configuration of the small hybrid filter 10, the multiplexer 90, and the high-frequency module 1 in which deterioration of the pass characteristics is suppressed.

[2 ] Circuit element arrangement Structure of high-frequency Module 1A of embodiment 1 ]

Fig. 3A is a schematic plan view of the high-frequency module 1A of embodiment 1. Fig. 3B is a schematic cross-sectional structure of the high-frequency module 1A of embodiment 1, and specifically, is a cross-sectional view taken along line III-III of fig. 3A. Fig. 3A (a) shows a layout of circuit components when the main surface 80a of the module substrate 80 facing each other, of the main surfaces 80a and 80b, is viewed from the positive z-axis direction side. On the other hand, fig. 3A (b) shows a perspective view of the arrangement of the circuit components when the main surface 80b is viewed from the z-axis positive direction side. In fig. 3A, a symbol indicating the function of each circuit component is added to each circuit component in order to facilitate understanding of the arrangement relationship of each circuit component, but this symbol is not added to the actual high-frequency module 1A.

The high-frequency module 1A of example 1 specifically shows the arrangement structure of each circuit element constituting the high-frequency module 1 of the embodiment.

As shown in fig. 3A and 3B, the hybrid filter 10 of the present embodiment has a module substrate 80 in addition to an elastic wave resonator, an inductor, and a capacitor. In addition, the high-frequency module 1A of the present embodiment has a module substrate 80, resin members 81 and 82, external connection terminals 150, and a metal shielding layer 85 in addition to the circuit configuration shown in fig. 1.

The module board 80 is an example of a board, and has a main surface 80a and a main surface 80b facing each other, and is mounted with circuit components constituting the high-frequency module 1A. As the module substrate 80, for example, a low-temperature co-fired ceramic (Low Temperature Co-fired Ceramics: LTCC) substrate, a high-temperature co-fired ceramic (High Temperature Co-fired Ceramics: HTCC) substrate, a component-embedded substrate, a substrate having a rewiring layer (Redistribution Layer: RDL), a printed circuit substrate, or the like having a laminated structure of a plurality of dielectric layers is used.

In the present embodiment, the main surface 80a corresponds to a first main surface, and the main surface 80b corresponds to a second main surface.

Further, the module substrate 80 preferably has a multilayer structure in which a plurality of dielectric layers are stacked, and a ground electrode pattern is formed on at least one of the plurality of dielectric layers. Thereby, the electromagnetic field shielding function of the module substrate 80 is improved.

As shown in fig. 3 (b), the antenna connection terminal 100, the transmission input terminals 130 and 131, and the reception output terminals 120 and 121 may be formed on the main surface 80b.

The resin member 81 is disposed on the main surface 80a and covers a part of the circuit member constituting the high-frequency module 1A and the main surface 80a. The resin member 82 is disposed on the main surface 80b and covers a part of the circuit member constituting the high-frequency module 1A and the main surface 80b. The resin members 81 and 82 have a function of ensuring reliability such as mechanical strength and moisture resistance of circuit members constituting the high-frequency module 1A.

The metal shielding layer 85 covers the surface of the resin member 81 and is set to the ground potential. The metal shielding layer 85 is a metal thin film formed by, for example, a sputtering method.

The resin members 81 and 82 and the metal shielding layer 85 are not essential components of the high-frequency module 1 of the present embodiment.

In the present embodiment, the matching circuits 45, 46, 47, and 48 each include an inductor.

The inductors L1, L2, L3, L4, L5, and L6 constituting the hybrid filters 10 and 11 are examples of the first inductors disposed on the module substrate 80, and the capacitors C3 and C4 are examples of the first capacitors disposed on the module substrate 80.

Although not shown in fig. 3A, wiring lines connecting the circuit components shown in fig. 1 are formed in the module substrate 80 and on the main surfaces 80a and 80b. The wiring may be a bonding wire having both ends bonded to one of the main surfaces 80a and 80b and the circuit component constituting the high-frequency module 1A, or may be a terminal, an electrode, or a wiring formed on the surface of the circuit component constituting the high-frequency module 1A.

As shown in fig. 3A, in the high-frequency module 1A of the present embodiment, the acoustic wave resonators A1 and A2 and the inductors L1, L2, L3, L4, L5, and L6 are examples of the first circuit element, and are arranged on the main surface 80a, and the capacitors C3 and C4 are examples of the second circuit element, and are arranged on the main surface 80b.

According to the above configuration, the acoustic wave resonator A1 and the inductors L1 to L3 constituting the hybrid filter 10 are distributed and arranged on both sides of the module substrate 80 with the capacitor C3 interposed therebetween. This can miniaturize the hybrid filter 10. Further, unnecessary coupling between the elastic wave resonator A1 and the inductors L1 to L3 and the capacitor C3 can be suppressed. Thus, the compact hybrid filter 10 in which deterioration of the pass characteristics is suppressed can be provided.

In the same manner, the elastic wave resonators A2 and the inductors L4 to L6 constituting the hybrid filter 11 are distributed and arranged on both surfaces of the module substrate via the module substrate 80, so that the hybrid filter 11 having a small size and suppressed deterioration of the pass characteristics can be provided.

Further, the small-sized multiplexer 90 in which deterioration of the pass characteristics is suppressed can be provided.

In addition, the first circuit element and the second circuit element may be distributed and arranged on both sides of the module substrate 80 only in one of the hybrid filters 10 and 11. Accordingly, the hybrid filter 10 or 11 in which deterioration of the pass characteristics is suppressed can be provided.

In the high-frequency module 1A of the present embodiment, the power amplifiers 30 and 31, the filters 15 to 18, and the matching circuits 45 to 48 are disposed on the main surface 80a, and the low-noise amplifiers 20 and 21, and the switches 50 and 51 are disposed on the main surface 80b.

In the high-frequency module 1A of the present embodiment, a plurality of external connection terminals 150 are arranged on the main surface 80b. The high-frequency module 1A exchanges electrical signals with an external substrate disposed on the negative z-axis side of the high-frequency module 1A via a plurality of external connection terminals 150. In addition, several of the plurality of external connection terminals 150 are set to the ground potential of the external substrate. The main surface 80b of the main surfaces 80a and 80b facing the external substrate is provided with the low noise amplifiers 20 and 21 and the switches 50 and 51, which are easy to thin, without disposing circuit components difficult to thin.

As shown in fig. 3A and 3B, the external connection terminal 150 may be a columnar electrode penetrating the resin member 82 in the z-axis direction, or the external connection terminal 150 may be a bump electrode formed on the main surface 80B. In this case, the resin member 82 on the main surface 80b may be omitted.

Here, in the high-frequency module 1A of the present embodiment, the capacitors C3 and C4 and the switches 50 and 51 are included in one semiconductor IC71. This can reduce the size and thickness of the capacitors C3 and C4 and the switches 50 and 51.

The capacitors C3 and C4 may be, for example, integrated passive elements (IPD: integrated Passive Device) integrally mounted on the inside or the surface of the Si substrate. Accordingly, since the capacitors C3 and C4 are configured by the IPD capable of being thinned, the main surface 80b can be thinned.

In the high-frequency module 1A of the present embodiment, the power amplifiers 30 and 31 are disposed on the main surface 80a, and the low-noise amplifiers 20 and 21 are disposed on the main surface 80b. Accordingly, the transmission amplifier and the reception amplifier are arranged through the module substrate 80, so that isolation between transmission and reception in the high-frequency module 1A is improved.

In addition, in the high frequency module 1A of the present embodiment, the low noise amplifiers 20 and 21 are included in one semiconductor IC72. This can reduce the size and thickness of the low noise amplifiers 20 and 21.

The power amplifiers 30 and 31 are components having a large heat generation amount among the circuit components included in the high-frequency module 1A. In order to improve the heat dissipation of the high-frequency module 1A, it is important to dissipate heat generated by the power amplifiers 30 and 31 to an external substrate through a heat dissipation path having a small thermal resistance. In the case where the power amplifiers 30 and 31 are mounted on the main surface 80b, electrode wirings connected to the power amplifiers 30 and 31 are arranged on the main surface 80 b. Therefore, as the heat dissipation path, a heat dissipation path via only the planar wiring pattern (along the xy plane direction) on the main surface 80b is included. The planar wiring pattern is formed of a metal thin film and thus has a large thermal resistance. Therefore, when the power amplifiers 30 and 31 are arranged on the main surface 80b, the heat dissipation performance is reduced.

In contrast, the high-frequency module 1A of the present embodiment is connected to the ground electrodes of the power amplifiers 30 and 31, and the power amplifiers 30 and 31 can be connected to the external connection terminal 150 via the heat radiation via conductors from the main surface 80a to the main surface 80 b. As a result, the heat dissipation paths of the power amplifiers 30 and 31 can be eliminated only through the planar wiring pattern along the xy plane direction, which has a large thermal resistance among the wirings in the module substrate 80. This can provide a small-sized high-frequency module 1A with improved heat dissipation from the power amplifiers 30 and 31 to the external substrate.

In the high-frequency module 1A of the present embodiment, it is necessary that any one of the elastic wave resonators P1, P2, and the inductors L1, L2, and L3 is disposed on the main surface 80a, the capacitor C3 is disposed on the main surface 80b, and other circuit components may be disposed on any one of the main surfaces 80a and 80 b.

In the high-frequency module 1A of the present embodiment, the passband of either of the hybrid filters 10 and 11 may include at least one of Band42 (3400-3600 MHz), band43 (3600-3800 MHz), band48 (3550-3700 MHz), band49 (3550-3700 MHz), n77 (3300-4200 MHz) of 5G-NR, n78 (3300-3800 MHz), n79 (4400-5000 MHz), n46 (5150-5925 MHz), n96 (5925-7125 MHz), and n97, WLAN (5150-5350 MHz), WLAN (5470-5850 MHz), and WLAN (5925-7125 MHz) of 4G-LTE.

Accordingly, the hybrid filter 10 or 11 having a broad band and a steep filter characteristic can be applied to the above-described communication band in which the distance from the adjacent band is narrow.

In the high-frequency block 1A of the present embodiment, the passband of the hybrid filter 10 may include n79 of 5G-NR, and the passband of the hybrid filter 11 may include at least one of n77, and n78 of 4G lte, band42, band43, band48, band49, and 5G-NR.

[3 ] Circuit element arrangement Structure of high-frequency Module 1B of embodiment 2 ]

Fig. 4 is a schematic plan view of the high-frequency module 1B of embodiment 2. Fig. 4 (a) shows a layout of circuit components when the main surface 80a of the module substrate 80 facing each other, and the main surface 80a of the module substrate 80b are viewed from the positive z-axis direction side. On the other hand, fig. 4 (b) is a diagram showing the arrangement of the circuit components in perspective when the main surface 80b is viewed from the z-axis positive direction side. In fig. 4, a symbol indicating the function of each circuit component is added to the circuit components in order to facilitate understanding of the arrangement relationship of the circuit components, but this symbol is not added to the actual high-frequency module 1B.

The high-frequency module 1B of example 2 specifically shows the arrangement structure of each circuit element constituting the high-frequency module 1 of the embodiment.

The high frequency module 1B of the present embodiment is different from the high frequency module 1A of embodiment 1 in the arrangement structure of only the circuit components constituting the hybrid filters 10 and 11. Hereinafter, the high-frequency module 1B of the present embodiment will be described mainly with different configurations, although the description of the same configuration as that of the high-frequency module 1A of embodiment 1 will be omitted.

As shown in fig. 4, in the high-frequency module 1B of the present embodiment, the acoustic wave resonators A1 and A2, the inductors L1, L2, L5 and L6, and the capacitors C3 and C4 are examples of the first circuit element, respectively, disposed on the main surface 80a, and the inductors L3 and L4 are examples of the second circuit element, respectively, disposed on the main surface 80B.

According to the above configuration, the acoustic wave resonator A1, the inductors L1 and L2, and the capacitor C3 and the inductor L3 constituting the hybrid filter 10 are distributed and arranged on both sides of the module substrate via the module substrate 80. This can miniaturize the hybrid filter 10. Further, unnecessary coupling between the elastic wave resonator A1 and the inductors L1 and L2, and between the capacitor C3 and the inductor L3 can be suppressed. Thus, the compact hybrid filter 10 in which deterioration of the pass characteristics is suppressed can be provided.

In the same manner, the elastic wave resonators A2 and the inductors L5 and L6, and the capacitor C4 and the inductor L4 constituting the hybrid filter 11 are arranged on both surfaces of the module substrate via the module substrate 80, so that the hybrid filter 11 having a small size and suppressed deterioration of the pass characteristics can be provided.

Further, the small-sized multiplexer 90 in which deterioration of the pass characteristics is suppressed can be provided.

In addition, in the high-frequency module 1B of the present embodiment, the switches 50 and 51 are included in one semiconductor IC71. This can reduce the size and thickness of the switches 50 and 51.

The inductors L3 and L4 may be IPDs integrally mounted in or on the Si substrate, for example. Accordingly, since the inductors L3 and L4 are configured by the IPD capable of being thinned, the main surface 80b can be thinned.

In the high-frequency module 1B of the present embodiment, any one of the elastic wave resonators P1, P2 and the capacitor C3 is disposed on the main surface 80a, and any one of the inductors L1, L2 and L3 is necessarily disposed on the main surface 80B, and other circuit components may be disposed on any one of the main surfaces 80a and 80B.

[4 ] Circuit element arrangement Structure of high-frequency Module 1C of embodiment 3 ]

Fig. 5 is a schematic plan view of the high-frequency module 1C of embodiment 3. Fig. 5 (a) shows a layout of circuit components when the main surface 80a of the module substrate 80 facing each other, and the main surface 80a of the module substrate 80b are viewed from the positive z-axis direction side. On the other hand, fig. 5 (b) is a diagram showing the arrangement of the circuit components in perspective when the main surface 80b is viewed from the z-axis positive direction side. In fig. 5, a symbol indicating the function of each circuit component is added to each circuit component in order to facilitate understanding of the arrangement relationship of each circuit component, but this symbol is not added to the actual high-frequency module 1C.

The high-frequency module 1C of example 3 specifically shows the arrangement structure of each circuit element constituting the high-frequency module 1 of the embodiment.

The high frequency module 1C of the present embodiment is different from the high frequency module 1A of embodiment 1 in the arrangement structure of only the circuit components constituting the hybrid filters 10 and 11. Hereinafter, the high-frequency module 1C of the present embodiment will be described mainly with different configurations, although the description of the same configuration as that of the high-frequency module 1A of embodiment 1 will be omitted.

As shown in fig. 5, in the high-frequency module 1C of the present embodiment, elastic wave resonators P1 and P5, inductors L1, L2, L3, L4, L5, and L6, and capacitors C3 and C4 are examples of the first circuit element, respectively, disposed on the main surface 80a, and elastic wave resonators P2 and P6 are examples of the second circuit element, respectively, disposed on the main surface 80b.

According to the above configuration, the elastic wave resonator P1, the inductors L1 to L3, and the capacitor C3 and the elastic wave resonator P2 constituting the hybrid filter 10 are distributed and arranged on both surfaces of the module substrate via the module substrate 80. This can miniaturize the hybrid filter 10. Further, unnecessary coupling between the elastic wave resonator P1, the inductors L1 to L3, and the capacitor C3 and the elastic wave resonator P2 can be suppressed. Thus, the compact hybrid filter 10 in which deterioration of the pass characteristics is suppressed can be provided.

In the same manner, the elastic wave resonator P5, the inductors L4 to L6, and the capacitor C4 and the elastic wave resonator P6 constituting the hybrid filter 11 are distributed and arranged on both surfaces of the module substrate via the module substrate 80. Thus, the compact hybrid filter 11 in which deterioration of the pass characteristics is suppressed can be provided.

Further, the small-sized multiplexer 90 in which deterioration of the pass characteristics is suppressed can be provided.

In the high-frequency module 1C of the present embodiment, the switches 50 and 51 are included in one semiconductor IC71. This can reduce the size and thickness of the switches 50 and 51.

In the high-frequency module 1C of the present embodiment, it is necessary that the elastic wave resonator P1 be disposed on the main surface 80a and the elastic wave resonator P2 be disposed on the main surface 80b, and other circuit components may be disposed on either of the main surfaces 80a and 80b.

[5 ] Circuit element configuration Structure of high-frequency Module 1D of embodiment 4 ]

Fig. 6 is a schematic sectional structure of a high-frequency module 1D of embodiment 4. The high-frequency module 1D of example 4 specifically shows the arrangement structure of each circuit element constituting the high-frequency module 1 of the embodiment.

The high frequency module 1D of the present embodiment is different from the high frequency module 1A of embodiment 1 in the arrangement structure of only the circuit components constituting the hybrid filter 10. Hereinafter, the high-frequency module 1D of the present embodiment will be described mainly with different configurations, although the description of the same configuration as that of the high-frequency module 1A of embodiment 1 will be omitted.

As shown in fig. 6, in the high-frequency module 1D of the present embodiment, the acoustic wave resonators A1 and A2 and the inductors L1, L2, L4, L5, and L6 are examples of the first circuit element, respectively, disposed on the main surface 80a, and the capacitors C3 and C4 are examples of the second circuit element, respectively, disposed on the main surface 80b.

According to the above configuration, the acoustic wave resonator A1, the inductors L1 to L2, and the capacitor C3 constituting the hybrid filter 10 are distributed and arranged on both sides of the module substrate 80. This can miniaturize the hybrid filter 10. Further, unnecessary coupling between the elastic wave resonator A1 and the inductors L1 to L2 and the capacitor C3 can be suppressed. Thus, the compact hybrid filter 10 in which deterioration of the pass characteristics is suppressed can be provided.

In the same manner, the elastic wave resonators A2 and the inductors L4 to L6 constituting the hybrid filter 11 are arranged on both surfaces of the module substrate via the module substrate 80, and therefore, the hybrid filter 11 having a small size in which deterioration of the pass characteristics is suppressed can be provided.

In addition, the first circuit element and the second circuit element may be distributed and arranged on both sides of the module substrate 80 only in one of the hybrid filters 10 and 11. Accordingly, the hybrid filter 10 or 11 in which deterioration of the pass characteristics is suppressed can be provided.

As shown in fig. 6, the inductor L3 is formed inside the module substrate 80.

Accordingly, the hybrid filter 10 can be further miniaturized. At least one of the inductors L1 to L3 and the capacitor C3 constituting the hybrid filter 10 may be formed inside the module substrate 80. At least one of the inductors L4 to L6 and the capacitor C4 constituting the hybrid filter 11 may be formed inside the module substrate 80.

[6 ] Circuit element arrangement Structure of high-frequency Module of modification ]

In the high frequency modules of embodiments 1 to 4, the matching circuit 45 connected to the input terminal of the low noise amplifier 20 is disposed on the main surface 80a. In this case, if the magnetic field coupling between the inductors L1 to L3 of the hybrid filter 10 and the inductor (second inductor) of the matching circuit 45 is strong, the transmission signal output from the power amplifier 30 has harmonics or intermodulation distortion that intrudes into the reception path where the low noise amplifier 20 is arranged via the magnetic field coupling, and the reception sensitivity is reduced. In contrast, in modification examples 1 to 3, a configuration is shown in which a decrease in the reception sensitivity is suppressed.

Fig. 7A is a schematic plan view of a part of the high-frequency module of modification 1. The figure shows the arrangement of circuit components on a partial region of the main surface 80a of the module substrate 80.

As shown in fig. 7A, when the module board 80 is viewed in plan, the acoustic wave resonator A1 is arranged between the inductors L1 to L3 and the inductor of the matching circuit 45. Accordingly, the coupling between the magnetic fluxes generated in the inductors L1 to L3 and the magnetic flux generated in the inductor of the matching circuit 45 is blocked by the elastic wave resonator A1, so that the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed.

The circuit components disposed between the inductors L1 to L3 and the inductor of the matching circuit 45 are not limited to the elastic wave resonator A1, and may be other circuit components.

Fig. 7B is a schematic plan view of a part of the high-frequency module of modification 2. The figure shows the arrangement of circuit components on a partial region of the main surface 80a of the module substrate 80.

As shown in fig. 7B, when the module board 80 is viewed from above, the winding axis direction (x-axis direction) of each of the inductors L1 to L3 and the winding axis direction (y-axis direction) of the inductor of the matching circuit 45 intersect each other on the main surface 80 a. In other words, the winding axis of each of the inductors L1 to L3 is not parallel to the winding axis of the inductor of the matching circuit 45. Accordingly, the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed.

Fig. 7C is a schematic plan view of a part of the high-frequency module of modification 3. The figure shows the arrangement of circuit components on a partial region of the main surface 80a of the module substrate 80.

As shown in fig. 7C, the winding axis direction (x-axis direction) of each of the inductors L1 to L3 intersects with the winding axis direction (z-axis direction) of the inductor of the matching circuit 45. In other words, the winding axis of each of the inductors L1 to L3 is not parallel to the winding axis of the inductor of the matching circuit 45. Accordingly, the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed.

Although not shown, the winding axes of the inductors L1 to L3 may be not aligned with the winding axis of the inductor of the matching circuit 45. Even in this case, the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed as compared with the case where the winding axes of the inductors L1 to L3 and the winding axis of the inductor of the matching circuit 45 are on the same line.

[7 ] Circuit element configuration Structure of high-frequency Module 1E of embodiment 5 ]

In the high-frequency module 1 and the communication device 5, the respective hybrid filters 10 and 11 function as filters for TDD that are used for both transmission and reception. In other words, the hybrid filter 10 filters a reception signal received by the antenna 2 and outputs the reception signal to a reception path in which the switch 50, the filter 15, the matching circuit 45, the low noise amplifier 20, and the reception output terminal 120 are disposed, and filters a transmission signal transmitted to a transmission path in which the transmission input terminal 130, the power amplifier 30, the matching circuit 46, the filter 16, and the switch 50 are disposed and outputs the transmission signal to the antenna 2. The hybrid filter 11 filters a reception signal received by the antenna 2, outputs the filtered signal to a reception path in which the switch 51, the filter 17, the matching circuit 47, the low noise amplifier 21, and the reception output terminal 121 are disposed, and filters a transmission signal transmitted to a transmission path in which the transmission input terminal 131, the power amplifier 31, the matching circuit 48, the filter 18, and the switch 51 are disposed, and outputs the filtered signal to the antenna 2.

In contrast, the high frequency module 1E of the present embodiment includes a high frequency circuit 62 in addition to the high frequency circuits 61 of the hybrid filters 10 and 11 for both transmission and reception, and the high frequency circuit 62 includes the hybrid filters 12 and 13 for both reception. Hereinafter, the high-frequency module 1E and the communication device 5E of the present embodiment will be described mainly with respect to a configuration different from the high-frequency module 1 and the communication device 5.

Fig. 8 is a circuit configuration diagram of the high-frequency module 1E and the communication device 5E of embodiment 5. As shown in the figure, the communication device 5E includes a high-frequency module 1E, antennas 2A and 2B, RFIC3, and BBIC4.

The antenna 2A is connected to the antenna connection terminal 200 of the high-frequency module 1E, radiates a high-frequency signal output from the high-frequency module 1E, and receives a high-frequency signal from the outside and outputs the high-frequency signal to the high-frequency module 1E.

The antenna 2B is connected to the antenna connection terminal 210 of the high-frequency module 1E, radiates a high-frequency signal output from the high-frequency module 1E, and receives a high-frequency signal from the outside and outputs the high-frequency signal to the high-frequency module 1E.

Next, the structure of the high-frequency module 1E will be described. The high-frequency module 1E includes antenna connection terminals 200 and 210, a switch 60, and high-frequency circuits 61 and 62.

The switch 60 has common terminals 60a and 60b and selection terminals 60c, 60d, 60e and 60f, and switches connection and disconnection between the common terminal 60a and at least one of the selection terminals 60c to 60f, and switches connection and disconnection between the common terminal 60b and at least one of the selection terminals 60c to 60 f. The common terminal 60a is connected to the antenna connection terminal 200. The common terminal 60b is connected to the antenna connection terminal 210. The selection terminal 60c is connected to the hybrid filter 10. The selection terminal 60d is connected to the hybrid filter 11. The selection terminal 60e is connected to the hybrid filter 12. The selection terminal 60f is connected to the hybrid filter 13.

According to the above-described connection structure of the switch 60, the communication device 5E can connect the antenna 2A to at least one of the hybrid filters 10 to 13, and can connect the antenna 2B to at least one of the hybrid filters 10 to 13.

The high-frequency circuit 61 includes reception output terminals 120 and 121, transmission input terminals 130 and 131, hybrid filters 10 and 11, switches 50 and 51, matching circuits 45, 46, 47 and 48, low-noise amplifiers 20 and 21, and power amplifiers 30 and 31. The high-frequency circuit 61 may also include filters 15 to 18 included in the high-frequency module 1.

The high-frequency circuit 62 includes reception output terminals 122 and 123, hybrid filters 12 and 13, matching circuits 43 and 44, and low-noise amplifiers 22 and 23.

The hybrid filters 12 and 13 are filters each provided with one or more elastic wave resonators, one or more inductors, and one or more capacitors. One terminal of the hybrid filter 12 is connected to the selection terminal 60e, and the other terminal is connected to the low noise amplifier 22 via the matching circuit 43. One terminal of the hybrid filter 13 is connected to the selection terminal 60f, and the other terminal is connected to the low noise amplifier 23 via the matching circuit 44. The hybrid filters 12 and 13 constitute a multiplexer 91.

The elastic wave resonators included in the hybrid filters 12 and 13 are, for example, elastic wave resonators using SAW, or elastic wave resonators using BAW.

The multiplexer 91 may be configured to divide at least the high-frequency signals of two different frequency bands (communication bands). From this point of view, the number of filters constituting the multiplexer 91 may be two or more.

As an example of a specific circuit configuration of the hybrid filters 12 and 13, a circuit configuration shown in fig. 2A and 2B can be cited.

The low noise amplifier 22 is, for example, an amplifier that amplifies a reception signal of the first communication band with low noise and outputs the amplified signal to the reception output terminal 122. The low noise amplifier 23 is, for example, an amplifier that amplifies the reception signal of the second communication band with low noise and outputs the amplified signal to the reception output terminal 123.

The matching circuit 43 is connected between the low noise amplifier 22 and the hybrid filter 12, and obtains impedance matching between the low noise amplifier 22 and the hybrid filter 12. The matching circuit 44 is connected between the low noise amplifier 23 and the hybrid filter 13, and obtains impedance matching between the low noise amplifier 23 and the hybrid filter 13.

The low noise amplifiers 22 and 23 may be formed in one semiconductor IC. The semiconductor IC is constituted by, for example, CMOS. Specifically, the method is formed by an SOI process. This enables the semiconductor IC to be manufactured at low cost. The semiconductor IC may be made of at least one of GaAs, siGe, and GaN. Thus, a high-frequency signal having high-quality amplification performance and noise performance can be output.

The low noise amplifiers 20, 21, 22, and 23 may be formed in one semiconductor IC. The low noise amplifiers 22 and 23 and the switch 60 may be formed in one semiconductor IC.

According to the above circuit configuration, the high frequency module 1E can transmit at least one of the transmission signal and the two reception signals in the first communication band, and can transmit at least one of the transmission signal and the two reception signals in the second communication band. The high frequency module 1E is also capable of transmitting at least two of the transmission signal and the reception signal of the first communication band, and the transmission signal and the reception signal of the second communication band at the same time.

Here, the circuit elements constituting the high-frequency module 1E of the present embodiment are disposed on any one of the main surfaces 80a, 80b of the module substrate 80 and the inside of the module substrate 80.

The circuit elements constituting the high-frequency circuit 61 have, for example, the same arrangement configuration as those of fig. 3A and 3B. That is, the acoustic wave resonators A1 and A2 and the inductors L1, L2, L3, L4, L5, and L6 are arranged on the main surface 80a, and the capacitors C3 and C4 are arranged on the main surface 80b.

The circuit elements constituting the high-frequency circuit 62 may be disposed on any of the main surfaces 80a and 80b of the module substrate 80 and inside the module substrate 80.

According to the above configuration, the acoustic wave resonator A1, the inductors L1 to L3, and the capacitor C3 constituting the hybrid filter 10 are distributed and arranged on both sides of the module substrate 80. In the same manner, the acoustic wave resonator A2 and the inductors L4 to L6 and the capacitor C4 constituting the hybrid filter 11 are distributed and arranged on both sides of the module substrate 80. This can miniaturize the hybrid filters 10 and 11, and can miniaturize the high-frequency module 1E and the communication device 5E. Further, unnecessary coupling between the elastic wave resonator A1 and the inductors L1 to L3 and the capacitor C3 can be suppressed, and unnecessary coupling between the elastic wave resonator A2 and the inductors L4 to L6 and the capacitor C4 can be suppressed. Thereby, the high frequency module 1E and the communication device 5E having the hybrid filters 10 and 11 with the degradation of the pass characteristics suppressed can be provided.

The switch 60 is preferably disposed on the main surface 80b of the module substrate 80. In addition, the switch 60 is preferably incorporated in one semiconductor IC together with the capacitors C3 and C4.

The circuit elements constituting the high-frequency circuit 61 may have the same arrangement as those of fig. 4, 5, 6, and 7A to 7C.

[8. Effect, etc. ]

As described above, the hybrid filter 10 of examples 1 to 5 includes the module substrate 80 having the main surfaces 80a and 80b facing each other, the elastic wave resonators P1 and P2 disposed on the module substrate 80, the inductors L1 to L3 disposed on the module substrate 80, and the capacitor C3 disposed on the module substrate 80, the passband of the hybrid filter 10 is larger than the resonance bandwidth of the elastic wave resonators P1 and P2, the first circuit element serving as any one of the elastic wave resonators P1 and P2, the inductors L1 to L3, and the capacitor C3 is disposed on the main surface 80a, and the second circuit element serving as any one of the elastic wave resonators P1 and P2, the inductors L1 to L3, and the capacitor C3 is disposed on the main surface 80b.

Accordingly, the first circuit element and the second circuit element constituting the hybrid filter 10 are distributed and arranged on both sides of the module substrate 80 via the module substrate 80. This can miniaturize the hybrid filter 10. Further, unwanted coupling between the first circuit element and the second circuit element can be suppressed. Thus, the compact hybrid filter 10 in which deterioration of the pass characteristics is suppressed can be provided.

In the hybrid filter 10 of embodiments 1, 2, 4, and 5, the first circuit element may be the elastic wave resonators P1 and P2, and the second circuit element may be one of the inductors L1 to L3 and the capacitor C3.

In the hybrid filter 10 of embodiments 1, 2, 4, and 5, the second circuit element may be one of the inductors L1 to L3 and the capacitor C3, and the first circuit element may be the other of the inductors L1 to L3 and the capacitor C3.

In the hybrid filter 10 of embodiments 1, 4, and 5, the second circuit element may be the capacitor C3.

In the hybrid filter 10 of embodiments 3 and 5, the first circuit element may be the elastic wave resonator P1, and the second circuit element may be the elastic wave resonator P2.

In the hybrid filter 10 of embodiments 4 and 5, one of the inductors L1 to L3 and the capacitor C3 may be formed inside the module substrate 80.

Accordingly, the hybrid filter 10 can be further miniaturized.

In embodiments 1 to 5, the passband of the hybrid filter 10 may include at least one of Band42, band43, band48, band49, n77, n78, n79, n46, n96, and n97 of 4G-LTE, and WLAN.

Accordingly, the hybrid filter 10 having a broad band and a steep filter characteristic can be applied to the above-described communication band in which the distance between the band and the adjacent band is narrow.

The multiplexer 90 of embodiments 1 to 5 includes hybrid filters 10 and 11.

In the multiplexer 90 according to embodiments 1 to 5, the passband of the hybrid filter 10 may include n79 of 5G-NR, and the passband of the hybrid filter 11 may include at least one of n77, and n78 of 4G-LTE Band42, band43, band48, band49, and 5G-NR.

The high frequency module of embodiments 1 to 5 includes the hybrid filter 10, the low noise amplifier 20, the power amplifier 30, and the switch 50 for switching the connection between the hybrid filter 10 and the low noise amplifier 20 and the connection between the hybrid filter 10 and the power amplifier 30.

The high-frequency module of embodiments 1 to 5 may further include a plurality of external connection terminals 150 disposed on the main surface 80 b.

In the high-frequency module 1A of embodiment 1, the switch 50 may be disposed on the main surface 80b, and the capacitor C3 disposed on the main surface 80b and the switch 50 may be included in one semiconductor IC71.

Accordingly, the high-frequency module 1A can be miniaturized and thinned.

In the high-frequency module 1B of embodiment 2, the inductor L3 disposed on the main surface 80B may be an integrated passive element.

Accordingly, the high-frequency module 1B can be miniaturized and thinned.

In the high frequency modules of embodiments 1 to 5, the low noise amplifier 20 may be disposed on the main surface 80b, and the high frequency modules of embodiments 1 to 5 may further include an inductor of the matching circuit 45 connected to the input terminal of the low noise amplifier 20 and disposed on the main surface 80 a.

In the high-frequency modules according to modifications 2 and 3, the winding axes of the coils constituting the inductors L1 to L3 may be non-parallel to the winding axes of the coils constituting the inductors of the matching circuit 45.

Accordingly, the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed. This suppresses a decrease in the reception sensitivity of the high-frequency module.

In the high-frequency modules according to modifications 1 to 3, the winding axes of the coils constituting the inductors L1 to L3 may be not aligned with the winding axes of the coils constituting the inductors of the matching circuit 45.

Accordingly, the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed, as compared with the case where the winding axes of the inductors L1 to L3 and the winding axis of the inductor of the matching circuit 45 are aligned. This suppresses a decrease in the reception sensitivity of the high-frequency module.

In the high-frequency module according to modification 1, a circuit member may be disposed between the inductors L1 to L3 and the inductor of the matching circuit 45.

Accordingly, the coupling between the magnetic fluxes generated in the inductors L1 to L3 and the magnetic fluxes generated in the inductor of the matching circuit 45 is blocked by the circuit member, so that the magnetic field coupling between the inductors L1 to L3 and the inductor of the matching circuit 45 can be suppressed. This suppresses a decrease in the reception sensitivity of the high-frequency module.

The high frequency module of embodiments 1 to 5 may further include a filter 15 connected between the low noise amplifier 20 and the hybrid filter 10.

In the high frequency modules of embodiments 1 to 5, the power amplifier 30 may be disposed on the main surface 80a.

Accordingly, the transmission amplifier and the reception amplifier are arranged through the module substrate 80, so that isolation between transmission and reception in the high-frequency module is improved.

The communication device 5 includes an RFIC3 for processing the high-frequency signal received by the antenna 2, and a high-frequency module 1 for transmitting the high-frequency signal between the antenna 2 and the RFIC 3.

Thus, a communication device having a small-sized hybrid filter in which deterioration of filter characteristics is suppressed can be provided.

(other embodiments)

The hybrid filter, the multiplexer, the high-frequency module, and the communication device according to the present invention have been described above by way of example and embodiment, but the present invention is not limited to the above-described embodiments, and modifications. Other embodiments realized by combining any of the above-described embodiments, examples, and modifications, modifications obtained by implementing various modifications of the above-described embodiments without departing from the gist of the present invention, and various devices incorporating the hybrid filter, multiplexer, high-frequency module, and communication apparatus of the present invention are also included in the present invention.

For example, in the hybrid filter, the multiplexer, the high-frequency module, and the communication device according to the embodiments, examples, and modifications, matching elements such as an inductor and a capacitor, and a switching circuit may be connected between the respective constituent elements. The inductor may include a wiring inductor based on wiring connecting the components.

The present invention can be widely used in communication equipment such as mobile phones as a hybrid filter, a multiplexer, a high-frequency module, and a communication device that can be applied to a multiband system.

Description of the reference numerals

1. 1A, 1B, 1C, 1D, 1E … high frequency module, 2A, 2B … antenna, 3 … RF signal processing circuit (RFIC), 4 … baseband signal processing circuit (BBIC), 5E … communication device, 10, 11, 12, 13 … hybrid filter, 15, 16, 17, 18 … filter, 20, 21, 22, 23 … low noise amplifier, 30, 31 … power amplifier, 43, 44, 45, 46, 47, 48 … matching circuit, 50, 51, 60 … switch, 60a, 60B … common terminal, 60C, 60D, 60E, 60f … select terminal, 61, 62 … high frequency circuit, 71, 72 … semiconductor IC, the module comprises an 80 … module substrate, 80a, 80B … main surfaces, 81, 82 … resin components, an 85 … metal shielding layer, 90, 91 … multiplexers, 100, 200, 210 … antenna connection terminals, 101, 102, 103, 104, 105, 106 … input/output terminals, 120, 121, 122, 123 … receiving/output terminals, 130, 131 … transmitting/input terminals, 150 … external connection terminals, A1, A2 … elastic wave resonators, C3, C4, C6, C7, C8, C9 … capacitors, L1, L2, L3, L4, L5, L6, L7, L8 … inductors and P1, P2, P5, P6 … elastic wave resonators.

Claims (20)

1. A hybrid filter is provided with:

a substrate having a first main surface and a second main surface which are opposed to each other;

More than one elastic wave harmonic oscillator arranged on the substrate;

one or more first inductors disposed on the substrate; and

one or more first capacitors disposed on the substrate,

the passband bandwidth of the hybrid filter is greater than the resonance bandwidth of the one or more elastic wave resonators,

a first circuit element is arranged on the first main surface, the first circuit element being one of the one or more elastic wave resonators, the one or more first inductors, and the one or more first capacitors,

a second circuit element is arranged on the second main surface, and the second circuit element is another one of the one or more elastic wave resonators, the one or more first inductors, and the one or more first capacitors.

2. The hybrid filter of claim 1, wherein,

the first circuit element is one of the one or more elastic wave resonators,

the second circuit element is one of the one or more first inductors and the one or more first capacitors.

3. The hybrid filter of claim 1, wherein,

The second circuit element is one of the one or more first inductors and one of the one or more first capacitors,

the first circuit element is the other of one of the one or more first inductors and one of the one or more first capacitors.

4. A hybrid filter according to claim 2 or 3, wherein,

the second circuit element is one of the one or more first capacitors.

5. The hybrid filter of claim 1, wherein,

the first circuit element is one of the one or more elastic wave resonators,

the second circuit element is another one of the one or more elastic wave resonators.

6. The hybrid filter according to any one of claims 1 to 5, wherein,

one of the one or more first inductors and the one or more first capacitors is formed in the substrate.

7. The hybrid filter according to any one of claims 1 to 6, wherein,

the passband of the hybrid filter includes at least one of n77, n78, n79, n46, n96 and n97, WLAN (5150-5350 MHz), WLAN (5470-5850 MHz), and WLAN (5925-7125 MHz) of 4G-LTE, band43, band48, band49, and 5G-NR.

8. A multiplexer is provided with:

a common terminal;

a first hybrid filter according to any one of claims 1 to 7 connected to the common terminal; and

a second hybrid filter according to any one of claims 1 to 7 connected to the common terminal.

9. The multiplexer of claim 8 wherein,

the passband of the first hybrid filter comprises n79 of 5G-NR,

the passband of the second hybrid filter includes at least one of n77, n78, and n77 of Band42, band43, band48, band49, and 5G-NR of 4G-LTE.

10. A high-frequency module is provided with:

the hybrid filter of any one of claims 1-7;

a low noise amplifier;

a power amplifier; and

and a switch for switching connection between the hybrid filter and the low noise amplifier and connection between the hybrid filter and the power amplifier.

11. The high frequency module according to claim 10, wherein,

the external connection terminal is provided with a plurality of external connection terminals arranged on the second main surface.

12. The high frequency module according to claim 11, wherein,

the switch is disposed on the second main surface,

the second circuit element and the switch disposed on the second main surface are included in one semiconductor IC.

13. The high frequency module according to claim 11, wherein,

the second circuit element is an integrated passive element.

14. The high-frequency module according to any one of claims 11 to 13, wherein,

the low noise amplifier is disposed on the second main surface,

the high-frequency module further includes a second inductor connected to the input terminal of the low-noise amplifier and disposed on the first main surface.

15. The high frequency module of claim 14, wherein,

the winding axis of the coil constituting one of the one or more first inductors is not parallel to the winding axis of the coil constituting the second inductor.

16. The high frequency module of claim 14, wherein,

the winding axis of the coil constituting one of the one or more first inductors is not aligned with the winding axis of the coil constituting the second inductor.

17. The high frequency module of claim 14, wherein,

a circuit member is arranged between one of the one or more first inductors and the second inductor.

18. The high-frequency module according to any one of claims 14 to 16, wherein,

And an LC filter connected between the low noise amplifier and the hybrid filter.

19. The high-frequency module according to any one of claims 14 to 18, wherein,

the power amplifier is disposed on the first main surface.

20. A communication device is provided with:

an RF signal processing circuit that processes a high-frequency signal received by the antenna; and

the high frequency module according to any one of claims 10 to 19, wherein the high frequency signal propagates between the antenna and the RF signal processing circuit.