CN116527002A - Elastic wave device and elastic wave device using same - Google Patents
Elastic wave device and elastic wave device using same Download PDFInfo
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- CN116527002A CN116527002A CN202310332584.1A CN202310332584A CN116527002A CN 116527002 A CN116527002 A CN 116527002A CN 202310332584 A CN202310332584 A CN 202310332584A CN 116527002 A CN116527002 A CN 116527002A
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02598—Characteristics of substrate, e.g. cutting angles of langatate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to the technical field of filters, in particular to an elastic wave device and an elastic wave device using the same. The device comprises: a piezoelectric substrate having opposite first and second surfaces; an elastic wave assembly disposed on the first surface of the piezoelectric substrate; a second wiring provided on the first surface of the piezoelectric substrate, the second wiring including a bridge portion arranged along the first direction; a first insulator disposed on an upper surface of the bridge portion, the first insulator being arranged along a first direction; a first wiring provided on the piezoelectric substrate and connecting the elastic wave assembly, the first wiring including a three-dimensional wiring portion which three-dimensionally crosses the bridge portion of the second wiring via a first insulator, and a first connection portion and a second connection portion which respectively connect both ends of the bridge portion in a first direction, the three-dimensional wiring portion being arranged in a second direction; the first direction and the second direction are arranged in a crossing way. Thus, the present invention provides an elastic wave device with high reliability.
Description
Technical Field
The invention relates to the technical field of filters, in particular to an elastic wave device and an elastic wave device using the same.
Background
A conventional filter (elastic wave device) using an elastic wave is widely used in a receiving circuit of a mobile phone or the like. The structure of the resonator (elastic wave device) is described in most of the specification, and the resonator includes a comb-shaped electrode provided on a substrate such as lithium tantalate or lithium niobate.
In this case, a plurality of wirings may be three-dimensionally crossed with each other in order to achieve downsizing. For example, in the three-dimensional intersection, an upper layer wiring is formed on a lower layer wiring with an insulating layer interposed therebetween.
The wiring on the upper layer spans the short sides of the two insulating layers, and is affected by the subsequent manufacture Cheng Waili, so that the insulating layers are easy to lift and fall off.
Disclosure of Invention
The present invention has been made to overcome the above-mentioned drawbacks of the prior art, and an elastic wave device and an elastic wave apparatus using the same are provided.
In order to solve the technical problems, one of the technical schemes provided by the invention is as follows:
an elastic wave device comprising:
a piezoelectric substrate having opposite first and second surfaces;
an elastic wave assembly disposed on a first surface of the piezoelectric substrate;
a second wiring provided on the first surface of the piezoelectric substrate, the second wiring including a bridge portion arranged in a first direction;
a first insulator disposed on an upper surface of the bridge portion, the first insulator being arranged along a first direction;
a first wiring provided on the piezoelectric substrate and connecting the elastic wave assembly, the first wiring including a three-dimensional wiring portion that three-dimensionally crosses a bridge portion of the second wiring via the first insulator, and first and second connection portions that respectively connect both ends of the bridge portion in a first direction, the three-dimensional wiring portion being arranged in a second direction;
the first direction and the second direction are arranged in a crossing way; the first insulator has a dimension in a first direction that is greater than a dimension in a second direction.
In a more preferred embodiment, the first insulator has opposite first and second ends along a first direction;
the first connection portion covers the first end and/or the second connection portion covers the second end.
In a further preferred embodiment, the second wiring includes an extension portion provided on a lower surface of the first wiring, a projection of the extension portion onto the piezoelectric substrate is located within a range of a projection of the first wiring onto the piezoelectric substrate, and a projection of the extension portion onto the piezoelectric substrate is located outside a range of a projection of the first insulator onto the piezoelectric substrate.
In a more preferred embodiment, a distance between an edge of the extension projected on the piezoelectric substrate and an edge of the first wiring projected on the piezoelectric substrate is greater than 2 μm.
In a more preferred embodiment, the thickness of the first insulator is above 0.5 μm and below 2.0 μm.
In a more preferred embodiment, the thickness of the second wiring is 1.2 μm or more and 6.0 μm or less.
In a preferred embodiment, the second wiring is formed of a material having a resistivity of less than 2.5X10 -8 Omega.m conductive material.
In a more preferred embodiment, the thickness of the second wiring is 0.5 μm or more and 3.0 μm or less.
In a further preferred embodiment, the first insulator has a first side surface on one side of the bridge portion and a second side surface on the other side of the bridge portion, the first side surface and the second side surface being provided as inclined surfaces; the first side face and the second side face have an inclination angle of 55 DEG or less with respect to the first surface of the piezoelectric substrate.
In a more preferred embodiment, the first insulator has a first side surface located on one side of the bridge portion and a second side surface located on the other side of the bridge portion, the first side surface and the second side surface being provided as cambered surfaces; and the inclination angle of each tangent line of the first side surface and the second side surface relative to the first surface of the piezoelectric substrate is less than 55 degrees.
In a more preferred embodiment, the inclination angles of the tangent lines of each point of the first side surface and the second side surface with respect to the first surface of the substrate are sequentially increased from top to bottom.
In a more preferred embodiment, the elastic wave assembly includes a finger-shaped electrode formed on the piezoelectric substrate, the finger-shaped electrode including a pair of comb-shaped electrodes disposed opposite each other, each of the comb-shaped electrodes having a plurality of electrode fingers and bus bars connected to the electrode fingers, and a reflector disposed on both sides of the finger-shaped electrode.
In a further preferred embodiment, the elastic wave device further comprises: and a second insulator covering the first wiring, the first insulator, and the second wiring.
The second technical scheme provided by the invention is as follows:
an elastic wave device comprising:
a piezoelectric substrate having opposite first and second surfaces;
an elastic wave assembly disposed on a first surface of the piezoelectric substrate;
a second wiring provided on the first surface of the piezoelectric substrate, the second wiring including a bridge portion arranged in a first direction;
a first insulator disposed on the bridge portion, the first insulator being arranged along a first direction;
a first wiring provided on the piezoelectric substrate and connecting the elastic wave assembly, the first wiring including a three-dimensional wiring portion that three-dimensionally crosses a bridge portion of the second wiring via the first insulator, and first and second connection portions that respectively connect both ends of the bridge portion in a first direction, the three-dimensional wiring portion being arranged in a second direction;
the first direction and the second direction are arranged in a crossing way;
the first insulator has opposite first and second ends along a first direction;
the first connection portion covers the first end and/or the second connection portion covers the second end.
In a further preferred embodiment, the second wiring includes an extension portion provided on a lower surface of the first wiring, a projection of the extension portion onto the piezoelectric substrate is located within a range of a projection of the first wiring onto the piezoelectric substrate, and a projection of the extension portion onto the piezoelectric substrate is located outside a range of a projection of the first insulator onto the piezoelectric substrate.
In a more preferred embodiment, a distance between an edge of the extension projected on the piezoelectric substrate and an edge of the first wiring projected on the piezoelectric substrate is greater than 2 μm.
In a further preferred embodiment, the first insulator has a first side surface on one side of the bridge portion and a second side surface on the other side of the bridge portion, the first side surface and the second side surface being provided as inclined surfaces; the first side face and the second side face have an inclination angle of 55 DEG or less with respect to the first surface of the piezoelectric substrate.
In a more preferred embodiment, the first insulator has a first side surface located on one side of the bridge portion and a second side surface located on the other side of the bridge portion, the first side surface and the second side surface being provided as cambered surfaces; and the inclination angle of each tangent line of the first side surface and the second side surface relative to the first surface of the piezoelectric substrate is less than 55 degrees.
In a further preferred embodiment, the elastic wave device further comprises: and a second insulator covering the first wiring, the first insulator, and the second wiring.
The third technical scheme provided by the invention is as follows:
an elastic wave device, the elastic wave device comprising: an elastic wave element as described above; and a circuit board on which the elastic wave element is mounted.
According to the present invention, the separation of the insulator for isolating the mutually intersecting wirings in the three-dimensional wiring portion formed on the substrate can be avoided.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
For a clearer description of embodiments of the invention or of the solutions of the prior art, the drawings that are needed in the description of the embodiments or of the prior art will be briefly described, it being obvious that the drawings in the description below are some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art; the positional relationships described in the drawings in the following description are based on the orientation of the elements shown in the drawings unless otherwise specified.
Fig. 1 is a cross-sectional view of an elastic wave device package structure according to a first embodiment of the present invention;
FIG. 2 shows a schematic top view of an electrode configuration on a piezoelectric substrate;
FIG. 3 is an exemplary top view of the acoustic wave assembly of the first embodiment being a surface acoustic wave resonator;
FIG. 4 is an enlarged schematic view of the electrode configuration on the portion of the piezoelectric substrate shown in phantom in FIG. 3;
FIG. 4a is a cross-sectional view taken along line A-A' in FIG. 4;
FIG. 4B is a cross-sectional view taken along line B-B' in FIG. 4;
FIG. 5 is a schematic top view of a prior art part at a solid intersection;
FIG. 6 is an enlarged schematic view of a portion of an electrode configuration on a piezoelectric substrate according to a second embodiment of the present invention;
FIG. 6a is a cross-sectional view taken along line C-C' in FIG. 6;
FIG. 7 is an enlarged schematic view of a portion of an electrode configuration on a piezoelectric substrate according to a third embodiment of the present invention;
FIG. 7a is a cross-sectional view taken along line D-D' in FIG. 7;
FIG. 7b is a cross-sectional view taken along line E-E' in FIG. 7;
FIG. 8 is a cross-sectional view taken along line A-A' of FIG. 4 of a first embodiment of the present invention showing the angle of inclination of the first side and the second side;
FIG. 9 is a cross-sectional view taken along line A-A' of FIG. 4 of a fourth embodiment of the present invention;
FIG. 10 is a cross-sectional view taken along line A-A' of FIG. 4 of a fifth embodiment of the present invention;
FIG. 11 is a cross-sectional view taken along line A-A' of FIG. 4 of a sixth embodiment of the present invention;
fig. 12 to 18 are schematic flow diagrams of a method for manufacturing an elastic wave device according to a first embodiment of the present invention.
Reference numerals:
1. a piezoelectric substrate; 2. an elastic wave assembly; 2a, finger-shaped electrodes; 2b, a reflector; 2c, comb-shaped electrodes; 2d, electrode fingers; 2e, bus bars; 3. a first wiring; 31. a three-dimensional wiring section; 32. a first connection portion; 33. a second connecting portion; 4. a second wiring; 41. a bridge; 42. an expansion section; 5. a first insulator; 5a, a first side; 5b, a second side; 6. a second insulator; 7. a side wall portion; 8. a cover body; 9. an external connection portion; 10. and a support substrate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention; the technical features designed in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that all terms used in the present invention (including technical terms and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs and are not to be construed as limiting the present invention; it will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The different embodiments disclosed below may reuse the same reference symbols and/or labels. These repetition are for the purpose of simplicity and clarity and do not in itself dictate a particular relationship between the various embodiments and/or configurations discussed.
Fig. 1 and 2 are a cross-sectional view of an elastic wave device package structure according to a first embodiment of the present invention and a schematic top view showing an electrode configuration on a piezoelectric substrate 1; in fig. 2, the configuration of the side wall portion 7, the cover 8, and the external connection portion 9 in fig. 1 is schematically removed in a plan view, and a portion constituting the elastic wave assembly 2 is schematically shown by surrounding a symbol of X with a rectangular frame; further, fig. 1 shows a section of the elastic wave package structure along a portion of the I-I' line in fig. 2.
As shown in fig. 1, the acoustic wave device package structure of the first embodiment includes a piezoelectric substrate 1, an acoustic wave device 2, a side wall portion 7, a cover 8, and an external connection portion 9;
in the first embodiment, the piezoelectric substrate 1 is a piezoelectric single crystal made of, for example, lithium tantalate, lithium niobate, crystal, or the like, or may be made of piezoelectric ceramics. In some embodiments, the piezoelectric substrate 1 may also be bonded to a support substrate 10, the support substrate 10 being made of, for example, a sapphire substrate, an alumina substrate, a spinel substrate, or a silicon substrate. In particular, the piezoelectric substrate 1 comprises a first surface 1a provided with said elastic wave assembly 2 and a second surface 1b opposite to said first surface 1a, said second surface 1b being usable for bonding a support substrate 10.
An elastic wave device 2 is provided on the first surface 1a of the piezoelectric substrate 1. In practice, the elastic wave device 2 has a plurality of resonators 2a, thereby constituting an elastic wave filter. More specifically, as shown in fig. 3, the resonator 2a includes a interdigital electrode (or referred to as interdigital transducer Interdigital Transducer, abbreviated as IDT) 2a for exciting a surface acoustic wave and a reflector 2b formed on the piezoelectric substrate 1. The finger-shaped electrode 2a includes a pair of comb-shaped electrodes 2c disposed opposite to each other. The comb-shaped electrodes 2c each have a plurality of electrode fingers 2d and bus bars 2e connected to the electrode fingers 2 d. The reflectors 2b are provided on both sides of the finger-shaped electrode 2 a.
In the first embodiment, the elastic wave device 2 is electrically connected to wirings constituting the input terminal In, the output terminal Out, and the ground terminal GND by the first wiring 3 and the second wiring 4 provided on the piezoelectric substrate 1 to connect the elastic wave device 2. The first wiring 3 and the second wiring 4 may be made of a suitable metal or alloy such as silver, aluminum, copper, titanium, palladium, or the like.
The side wall portion 7 surrounds the elastic wave assembly 2. The side wall portion 7 is made of synthetic resin. Preferably, the side wall portion 7 is made of a photosensitive resin. The photosensitive resin is easy to obtain a pattern by photolithography. Thereby, an opening portion for forming a space that does not interfere with vibration of the elastic wave device 2 or a through hole in which wiring of the external connection portion 9 is provided can be easily obtained. The photosensitive resin may be a photosensitive polyimide, a photosensitive epoxy resin, a photosensitive silicone, or the like. Preferably, photosensitive polyimide may be used for precise patterning, but is not limited thereto.
The cover 8 cooperates with the side wall 7 to form and seal the elastic wave assembly 2 in such a manner as not to interfere with the vibration of the elastic wave assembly 2, thereby forming a sealed cavity so that the elastic wave assembly 2 can operate normally. The cover 8 may be made of synthetic resin, and the synthetic resin constituting the cover 8 may be, for example, epoxy resin or polyimide, but is not limited thereto. Preferably, an epoxy resin may be used, and the cover 8 is formed by a low temperature hardening process.
As shown in fig. 2, an elastic wave device 2, a first wiring 3, and a second wiring 4 are formed on the piezoelectric substrate 1. The elastic wave assembly 2 may suitably employ a DMS structure design and a ladder design in order to obtain the desired bandpass filter characteristics. The input terminal In, the output terminal Out, and the ground terminal GND are formed by part of the first wiring 3 and part of the second wiring 4, and the elastic wave device 2 is electrically connected to these input terminal In, output terminal Out, and ground terminal GND through the first wiring 3.
FIG. 4 is an enlarged schematic view of the electrode configuration on the portion of the piezoelectric substrate shown in phantom in FIG. 3; fig. 4a and 4B are cross-sectional views taken along the line A-A 'and the line B-B' in fig. 4.
In the first embodiment, as shown in fig. 4, a plurality of resonators (6 resonators are schematically shown in this embodiment, namely, resonators 1, 2, 3, 4, 5, and 6) are provided on a piezoelectric substrate 1, and the resonators 1, 2, and 3 are electrically connected to the resonators 4, 5, and 6 through different lines of a first wiring 3, for example: resonator 1 is electrically connected to resonator 4 via first connection portion 32, resonator 3 is electrically connected to resonator 6 via second connection portion 33, and resonator 2 is electrically connected to resonator 5 via stereoscopic wiring portion 31; in order to connect the resonators 1, 4 and the resonators 3, 6, thereby, the bridge portion 41 of the second wiring 4 is provided in the first direction, the first insulator 5 is arranged in the same first direction, and the first wiring 3 is arranged in the second direction intersecting the first direction, and the bridge portion 41 of the second wiring 4 is isolated from the three-dimensional wiring portion 31 of the first wiring 3 by the first insulator 5, so that the resonators 1, 4 at different electric potentials are connected to the resonators 3, 6.
As shown in fig. 4a, 4b, a second wiring 4 is provided on the first surface 1a of the piezoelectric substrate 1, the second wiring 4 including a bridge portion 41 arranged along a first direction, which in the present embodiment may be the x-axis direction as shown in fig. 4; in one or more preferred embodiments, the thickness of the second wiring 4 may be 1.2 μm or more and 6.0 μm or less to improve the reliability of the coverage of the first insulator 5; preferably, the thickness of the second wiring 4 is 1.8 μm or more and 4.0 μm or less. In one or more preferred embodiments, the second wiring 4 may be formed of a material having a resistivity of less than 2.5X10 -8 The thickness of the entire metal structure can be reduced by forming the conductive material of Ω·m, for example, from a metal material of high conductivity such as gold, silver, or copper, or from an alloy material of high conductivity, or from a multilayer metal structure in which a plurality of metal layers are stacked, for example, the thickness of the second wiring 4 can be further reduced to 0.5 μm to 3.0 μm, and the reliability of the coverage of the first insulator 5 can be further improved, thereby improving the reliability of the entire device.
A first insulator 5, which is arranged along the first direction and is made of an insulating material such as Polyimide (PI), is arranged on the bridge portion 41 so as to cover the upper surface and the side surfaces of the bridge portion 41. In order to achieve miniaturization of the device while ensuring reliability, the film thickness of the first insulator 5 may be 0.5 μm or more and 2.0 μm or less, more preferably 0.8 μm or more and 1.2 μm or less, for example: the film thickness may be 0.8, 0.9, 1.0, 1.1, 1.2 μm, or a point value between any two of the above;
the first wiring 3 is disposed on the piezoelectric substrate 1 and electrically connected to the elastic wave device 2, the first wiring 3 includes a three-dimensional wiring portion 31 which is three-dimensionally crossed with the bridge portion 41 of the second wiring 4 via the first insulator 5, and a first connecting portion 32 and a second connecting portion 33 which are respectively connected to both ends of the bridge portion 41 in a first direction, the first connecting portion 32 and the second connecting portion 33 are respectively used for connecting different resonators, the three-dimensional wiring portion 31 is disposed in a second direction, and the first direction is disposed to intersect with the second direction, specifically, the second direction may be a y-axis direction as shown in fig. 4 in this embodiment; in one or more preferred embodiments, the thickness of the first wiring 3 is in a frequency range for which the elastic wave device is applicable, for example, the thickness of low frequency (about 1.5KMHz or less) is about 400nm or more and 500nm or more, and the thickness of high frequency (about 1.5 KMHz) is about 100nm to 200nm or so; the material of the first wiring 3 may be, for example, silver, aluminum, copper, titanium, palladium, or another suitable metal or alloy, or may be the same material as the second wiring 4, or may be a multilayer metal structure in which a plurality of metal layers are stacked.
However, in the above-described first embodiment, the first direction is the x-axis direction, and the second direction is the y-axis direction, that is, the second direction is the direction orthogonal to the first direction, but in reality, the second direction is not limited to the orthogonal direction as long as it is the direction intersecting the first direction.
As shown in fig. 4a and 4b, in this stereo cross portion, in the direction perpendicular to the plane of fig. 3, the bridge portion 41 of the second wiring 4, the first insulator 5, and the stereo wiring portion 31 of the first wiring 3 are provided in this order from bottom to top at the lowest position of the piezoelectric substrate 1, whereby a structure in which the first wiring 3 and the second wiring 4 form a stereo cross with the first insulator 5 interposed therebetween is realized.
Currently, in order to make the integration of the device as a whole higher and more compact, it is common to use an insulator to isolate the electrical connection of the wirings of different layers, the insulator is configured such that when it is arranged in a certain direction, the dimension in the direction is larger than the dimension orthogonal to the direction, and as shown in fig. 5, the elastic wave device generally includes a piezoelectric substrate 1, an elastic wave element (not shown), a first wiring 3, a second wiring 4, and a first insulator 5 in the prior art; in the three-dimensional crossing portion, the piezoelectric substrate 1 is at the lowest position, and the first wiring 3, the first insulator 5 and the second wiring 4 are sequentially arranged from bottom to top along the plane direction perpendicular to the piezoelectric substrate 1, so that when the insulators are used for blocking electricity in different directions and the second wiring 4 is used for realizing bridging action, as the arrangement directions of the second wiring 4 and the first insulator 5 are the same, the second wiring 4 spans two short sides of the first insulator 5, and the edge of the first insulator 5 arranged by the second wiring is easy to lift and fall under the influence of external force in the subsequent process.
In the first embodiment, the bridge portion 41 of the second wiring 4 disposed along the first direction is disposed below the first insulator 5, then the first insulator 5 is disposed on the bridge portion 41 along the same direction, and finally the three-dimensional wiring portion 31 of the first wiring 3 is disposed above the first insulator 5, and the three-dimensional wiring portion 31 is disposed along the second direction intersecting with the first direction, so that, unlike the prior art in which the wiring layer (the second wiring 4) overlying the first insulator 5 is disposed in the same direction as the first insulator 5, the insulator and the wiring layer overlying the first insulator are disposed in an intersecting manner, so that the three-dimensional wiring portion 31 spans two long sides of the first insulator 5, that is, in the first embodiment, as shown in fig. 4, the dimension (length) of the first insulator along the first direction is greater than the dimension (length) along the second direction, the arrangement of the structure effectively reduces the occurrence of the influence of the falling-off of the external force wave in the subsequent insulator 5, thereby improving the reliability of the device.
FIG. 6 is an enlarged schematic view of a portion of an electrode configuration on a piezoelectric substrate according to a second embodiment of the present invention; fig. 6a is a cross-sectional view taken along line C-C' in fig. 6.
As shown in fig. 6, on the piezoelectric substrate 1, a first wiring 3, a second wiring 4, and a first insulator 5 are respectively formed, where the first insulator 5 has a first end 5a and a second end 5b opposite to each other along a first direction, in a second embodiment, a first connection portion 32 of the first wiring 3 covers the first end 5a, and a second connection portion 33 covers the second end 5b, and by adopting the above structure, both ends of the first insulator 5 along the first direction can be covered by using the connection portion of the first wiring 3, so that edge lift-off of the first insulator 5 due to an external force in subsequent manufacturing is more effectively avoided, thereby affecting the performance of a product, and further improving the reliability of the elastic wave device.
It should be noted that, in the second embodiment, the first connecting portion 32 and the second connecting portion 33 are particularly made to cover two ends of the first insulator 5 along the first direction, and it is envisioned that only when one of the first connecting portion 32 and the second connecting portion 33 is implemented to cover one end of the opposite side of the first insulator 5 along the first direction, the problem that the edge of the first insulator 5 is warped and falls off due to external force in the subsequent process can be solved to a certain extent and positive effects are achieved;
other configurations of the second embodiment may be the same as those of the first embodiment, and thus will not be described in detail herein.
FIG. 7 is an enlarged schematic view of a portion of an electrode configuration on a piezoelectric substrate according to a third embodiment of the present invention; fig. 7a and 7b are cross-sectional views taken along lines D-D 'and E-E' in fig. 7, respectively.
As shown in fig. 7, on the piezoelectric substrate 1, the first wiring 3, the second wiring 4, and the first insulator 5 are formed, respectively, the second wiring 4 includes an extension portion 42 provided on the lower surface of the first wiring 3, the projection of the extension portion 42 on the piezoelectric substrate 1 is located within the range of the projection of the first wiring 3 on the piezoelectric substrate 1, and the projection of the extension portion 42 on the piezoelectric substrate 1 is located outside the range of the projection of the first insulator 5 on the piezoelectric substrate 1, the thickness of the first wiring 3 is relatively thin, generally in the nano-scale, and the materials used for the first wiring 3 and the second wiring 4 are conductive materials, in particular, the same materials can be used, so that the thickness of the wiring, particularly the thickness of the first wiring 3, can be increased by forming the extension portion 42 of the second wiring 4 under the first wiring 3, and the insertion loss can be reduced;
other configurations of the third embodiment may be the same as those of the first embodiment, and thus will not be described in detail herein.
In one or more preferred embodiments, as shown in fig. 7, an extension 42 may be disposed on the lower surface of the stereoscopic wiring part 31, and the projection of the extension 42 on the piezoelectric substrate 1 is located outside the range in which the first insulator 5 is projected on the piezoelectric substrate 1.
In one or more preferred embodiments, as shown in fig. 7, the extension portions 42 may be disposed on the lower surface of the first connection portion 32, and projections of the extension portions 42 on the piezoelectric substrate 1 are respectively located outside the range of projection of the first connection portion 32 on the piezoelectric substrate 1;
in one or more preferred embodiments, as shown in fig. 7, the extension portion 42 may be disposed on the lower surface of the second connection portion 33, and projections of the extension portion 42 on the piezoelectric substrate 1 are respectively located outside the range of projection of the second connection portion 33 on the piezoelectric substrate 1;
it should be noted that, as shown in fig. 3, the expansion portion 42 of the second wiring 3 may be disposed under the other first wiring 3 to increase the thickness of the first wiring 2 and reduce the insertion loss, as can be seen in connection with the above embodiment.
In one or more preferred embodiments, the distance between the edge of the extension 42 projected on the piezoelectric substrate 1 and the edge of the first wiring 3 projected on the piezoelectric substrate 1 is greater than 2 μm, preferably greater than 3 μm, thereby preventing the pattern from being offset to affect the IDT while reducing the device insertion loss.
FIG. 8 is a cross-sectional view taken along line A-A' of FIG. 4 of a first embodiment of the present invention;
as shown in fig. 8, in the first embodiment, the first insulator 5 has a first side face 5a located on one side of the bridge portion 41 and a second side face 5b located on the other side of the bridge portion 41, the first side face 5a and the second side face 5b being provided as inclined faces; the inclination angles of the first side face and the second side face with the first surface 1a of the piezoelectric substrate 1 are 55 ° or less, preferably the inclination angles of the first side face 5a and the second side face 5b with the first surface 1a of the piezoelectric substrate 1 are 50 ° or less, whereby by slowing down the inclination angles of the first side face 5a and the second side face 5b of the first insulator 5, the inclination angle of the first wiring 3 formed on the first insulator 5 is slowed down accordingly, whereby cracks and breakage in the first wiring 3 can be effectively suppressed.
FIG. 9 is a cross-sectional view taken along line A-A' of FIG. 4 of a fourth embodiment of the present invention;
as shown in fig. 9, in the fourth embodiment, the first insulator 5 has a first side face 5a located on one side of the bridge portion 41 and a second side face 5b located on the other side of the bridge portion 41, the first side face 5a and the second side face 5b having lower side face portions 5a1, 5b1 with relatively large inclination angles and upper side face portions 5a2, 5b2 with relatively small inclination angles; the inclination angle of the first side surface 5a and the second side surface 5b with respect to the first surface 1a of the piezoelectric substrate 1 is 55 ° or less, whereby the variation of the first wiring 3 on the portion from the side surfaces 5c1, 5c2 to the side surfaces 5d1, 5d2 is made gentle. Accordingly, cracks and breakage in the first wiring 3 can be more effectively suppressed.
FIG. 10 is a cross-sectional view taken along line A-A' of FIG. 4 of a fifth embodiment of the present invention;
as shown in fig. 10, in the fifth embodiment, in the third embodiment, the first insulator 5 has a first side face 5a located on one side of the bridge portion 41 and a second side face 5b located on the other side of the bridge portion 41, the first side face 5a and the second side face 5b being provided as arc faces; the inclination angle of the first side face 5a and the second side face 5b with the first surface 1a of the piezoelectric substrate 1 is 55 ° or less, and the first side face 5a and the second side face 5b are set to be cambered surfaces, so that the contact point of the first wiring 3 with the first insulator 5 is a smooth arc, not a bump having a certain angle, so that the variation of the first wiring 3 is set to be smoother. Accordingly, cracks and breakage in the first wiring 3 can be more effectively suppressed. More preferably, in the fourth embodiment, the inclination angles of the point tangents of the first side 5a and the second side 5b with respect to the first surface 1a of the piezoelectric substrate 1 sequentially increase from top to bottom.
FIG. 11 is a cross-sectional view taken along line A-A' of FIG. 4 of a sixth embodiment of the present invention;
as shown in fig. 11, in the sixth embodiment, the elastic wave device further includes: a second insulator 6 covering the first wiring 3, the first insulator 5, and the second wiring 4; the second insulator 6 may be made of a material such as silicon dioxide, silicon nitride, or the like; the thickness of the second insulator 6 is 20nm or more and 40nm or less. It should be noted that, in the prior art, in order to implement the frequency adjustment of the elastic wave component 2, after the formation process of the first wiring 3 and the elastic wave component 2 is completed, a layer of Si compound, such as silicon dioxide, silicon nitride, or the like, needs to be plated to implement the frequency adjustment of the elastic wave component 2, and after the formation process of the second wiring 4 is completed, a further layer of Si compound needs to be plated to implement the protection of the moisture isolation of the second wiring 4, in the elastic wave device provided by the invention, since the second wiring 4 is placed below the first wiring 3, in the device structure, only a layer of the second insulator 6 formed by the Si compound needs to be plated after the first wiring 3 and the elastic wave component 2 are formed, and the second insulator 6 can play the role of frequency adjustment of the elastic wave component 2 and the overall moisture isolation.
The preparation method of the elastic wave device of the first embodiment disclosed by the invention comprises the following steps:
step 1, as shown in fig. 4 and 12, a piezoelectric substrate 1 is provided, which has a first surface 1a and a second surface 1b opposite to each other, and optionally, a cleaning operation is performed on the piezoelectric substrate 1 to remove dirt on the surface of the piezoelectric substrate 1;
step 2, referring to fig. 4 and fig. 13 to fig. 15, a second wiring 4 is formed on the piezoelectric substrate 1, where the second wiring 4 includes a bridge portion 41 arranged along a first direction, specifically, a method of combining positive glue with negative glue to complete exposure by an ammonia baking machine is adopted to complete a yellow light process of the second wiring 4, further metal evaporation of the second wiring 4 is performed, and then a conventional Lift-off process is used to perform metal and glue stripping;
step 3, as shown in fig. 4 and 16, a first insulator 5 is formed on the bridge portion 41 and arranged along a first direction, and may specifically be a conventional coating exposure yellow light process to form the first insulator 5;
step 4, as shown in fig. 4 and 17, forming a first wiring 3 and an elastic wave device 5 on the first insulator 5 and the piezoelectric substrate 1, respectively, specifically, a conventional Bi-layer process may be used to generate the first wiring 3 and the elastic wave device 2, the first wiring 3 is connected to the elastic wave device 2, the first wiring 3 includes a three-dimensional wiring portion 31 that is three-dimensionally intersected with a bridge portion 41 of the second wiring 4 via the first insulator 5, and a first connection portion 32 and a second connection portion 33 that are respectively connected to both ends of the bridge portion in a first direction; the first direction and the second direction are arranged in a crossing way;
step 5, referring to fig. 4 and fig. 18, a second insulator 6 is formed to cover the elastic wave device 2, the first wiring 3, the first insulator 5, and the second wiring 4, so as to perform frequency adjustment on the elastic wave device 2, and the second insulator may be formed by a film forming method such as sputtering or vapor deposition, and then patterned by a photolithography etching method. The etching method is not particularly limited as long as dry etching, wet etching, or the like is selected according to the kind of material thereof, and Si compound materials such as silicon dioxide, silicon nitride, or the like may be used for the second insulator 6.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present invention may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Although terms such as a piezoelectric substrate, an elastic wave element, a finger-shaped electrode, a reflector, a comb-shaped electrode, an electrode finger, a bus bar, a first wiring, a three-dimensional wiring portion, a first connection portion, a second wiring, a bridge portion, an expansion portion, a first insulator, a first side surface, a second insulator, a side wall portion, a cover, an external connection portion, and the like are used more herein, the possibility of using other terms is not excluded. These terms are used merely for convenience in describing and explaining the nature of the invention; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present invention; the terms first, second, and the like in the description and in the claims of embodiments of the invention and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (20)
1. An elastic wave device comprising:
a piezoelectric substrate having opposite first and second surfaces;
an elastic wave assembly disposed on a first surface of the piezoelectric substrate;
a second wiring provided on the first surface of the piezoelectric substrate, the second wiring including a bridge portion arranged in a first direction;
a first insulator disposed on the bridge portion, the first insulator being arranged along a first direction;
a first wiring provided on the piezoelectric substrate and connecting the elastic wave assembly, the first wiring including a three-dimensional wiring portion that three-dimensionally crosses a bridge portion of the second wiring via the first insulator, and first and second connection portions that respectively connect both ends of the bridge portion in a first direction, the three-dimensional wiring portion being arranged in a second direction;
the first direction and the second direction are arranged in a crossing way; the first insulator has a dimension in a first direction that is greater than a dimension in a second direction.
2. The elastic wave device according to claim 1, wherein: the first insulator has opposite first and second ends along a first direction;
the first connection portion covers the first end and/or the second connection portion covers the second end.
3. The elastic wave device according to claim 1, wherein: the second wiring includes an extension portion provided on a lower surface of the first wiring, a projection of the extension portion onto the piezoelectric substrate is located within a range of a projection of the first wiring onto the piezoelectric substrate, and a projection of the extension portion onto the piezoelectric substrate is located outside a range of a projection of the first insulator onto the piezoelectric substrate.
4. An elastic wave device according to claim 3, wherein: the distance between the edge projected by the expansion part on the piezoelectric substrate and the edge projected by the first wiring on the piezoelectric substrate is larger than 2 mu m.
5. The elastic wave device according to claim 1, wherein: the thickness of the first insulator is 0.5 μm or more and 2.0 μm or less.
6. The elastic wave device according to claim 1, wherein: the thickness of the second wiring is 1.2 μm or more and 6.0 μm or less.
7. The elastic wave device according to claim 1, wherein: the second wiring has a resistivity of less than 2.5X10 -8 Omega.m conductive material.
8. The elastic wave device according to claim 7, wherein: the thickness of the second wiring is 0.5 μm or more and 3.0 μm or less.
9. The elastic wave device according to claim 1, wherein: the first insulator is provided with a first side surface positioned on one side of the bridging part and a second side surface positioned on the other side of the bridging part, and the first side surface and the second side surface are inclined surfaces; the first side face and the second side face have an inclination angle of 55 DEG or less with respect to the first surface of the piezoelectric substrate.
10. The elastic wave device according to claim 1, wherein: the first insulator is provided with a first side surface positioned on one side of the bridging part and a second side surface positioned on the other side of the bridging part, and the first side surface and the second side surface are arc surfaces; and the inclination angle of each tangent line of the first side surface and the second side surface relative to the first surface of the piezoelectric substrate is less than 55 degrees.
11. The elastic wave device according to claim 10, wherein: the inclination angles of the tangent lines of each point of the first side surface and the second side surface relative to the first surface of the substrate are sequentially increased from top to bottom.
12. The elastic wave device according to claim 1, wherein: the elastic wave component comprises a finger-shaped electrode and reflectors, wherein the finger-shaped electrode is formed on the piezoelectric substrate, the finger-shaped electrode comprises a pair of comb-shaped electrodes which are arranged in opposite directions, each comb-shaped electrode is provided with a plurality of electrode fingers and bus bars connected with the electrode fingers, and the reflectors are arranged on two sides of the finger-shaped electrode.
13. The elastic wave device according to claim 1, wherein the elastic wave device further comprises: and a second insulator covering the first wiring, the first insulator, and the second wiring.
14. An elastic wave device comprising:
a piezoelectric substrate having opposite first and second surfaces;
an elastic wave assembly disposed on a first surface of the piezoelectric substrate;
a second wiring provided on the first surface of the piezoelectric substrate, the second wiring including a bridge portion arranged in a first direction;
a first insulator disposed on the bridge portion, the first insulator being arranged along a first direction;
a first wiring provided on the piezoelectric substrate and connecting the elastic wave assembly, the first wiring including a three-dimensional wiring portion that three-dimensionally crosses a bridge portion of the second wiring via the first insulator, and first and second connection portions that respectively connect both ends of the bridge portion in a first direction, the three-dimensional wiring portion being arranged in a second direction;
the first direction and the second direction are arranged in a crossing way;
the first insulator has opposite first and second ends along a first direction;
the first connection portion covers the first end and/or the second connection portion covers the second end.
15. The elastic wave device according to claim 1, wherein: the second wiring includes an extension portion provided on a lower surface of the first wiring, a projection of the extension portion onto the piezoelectric substrate is located within a range of a projection of the first wiring onto the piezoelectric substrate, and a projection of the extension portion onto the piezoelectric substrate is located outside a range of a projection of the first insulator onto the piezoelectric substrate.
16. The elastic wave device according to claim 15, wherein: the distance between the edge projected by the expansion part on the piezoelectric substrate and the edge projected by the first wiring on the piezoelectric substrate is larger than 2 mu m.
17. The elastic wave device according to claim 1, wherein: the first insulator is provided with a first side surface positioned on one side of the bridging part and a second side surface positioned on the other side of the bridging part, and the first side surface and the second side surface are inclined surfaces; the first side face and the second side face have an inclination angle of 55 DEG or less with respect to the first surface of the piezoelectric substrate.
18. The elastic wave device according to claim 1, wherein: the first insulator is provided with a first side surface positioned on one side of the bridging part and a second side surface positioned on the other side of the bridging part, and the first side surface and the second side surface are arc surfaces; and the inclination angle of each tangent line of the first side surface and the second side surface relative to the first surface of the piezoelectric substrate is less than 55 degrees.
19. The elastic wave device according to claim 1, wherein the elastic wave device further comprises: and a second insulator covering the first wiring, the first insulator, and the second wiring.
20. An elastic wave device, characterized in that the elastic wave device comprises: the elastic wave element according to any one of claims 1 to 19; and a circuit board on which the elastic wave element is mounted.
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| CN202310332584.1A CN116527002A (en) | 2023-03-31 | 2023-03-31 | Elastic wave device and elastic wave device using same |
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