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CN116504743A - Packaging substrate and its manufacturing method - Google Patents

Packaging substrate and its manufacturing method Download PDF

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Publication number
CN116504743A
CN116504743A CN202210101668.XA CN202210101668A CN116504743A CN 116504743 A CN116504743 A CN 116504743A CN 202210101668 A CN202210101668 A CN 202210101668A CN 116504743 A CN116504743 A CN 116504743A
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Prior art keywords
insulating layer
layer
opposite sides
blind hole
conductive
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CN202210101668.XA
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CN116504743B (en
Inventor
陈敏尧
赖建光
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Xinai Technology Nanjing Co ltd
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Xinai Technology Nanjing Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486Via connections through the substrate with or without pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Packages (AREA)

Abstract

一种封装基板及其制法,包括将线路层及对位部嵌埋于一绝缘层中,再于该绝缘层对应该对位部之处形成盲孔,以于该盲孔中形成导电体,故借由该对位部的设计,可使该盲孔形成于预定的位置上。

A packaging substrate and its manufacturing method, including embedding the circuit layer and the alignment part in an insulating layer, and then forming a blind hole in the insulating layer corresponding to the alignment part, so as to form a conductor in the blind hole , so the blind hole can be formed at a predetermined position through the design of the alignment portion.

Description

封装基板及其制法Packaging substrate and its manufacturing method

技术领域technical field

本发明有关一种半导体封装技术,尤指一种具嵌埋型线路(Embedded Trace)的封装基板及其制法。The invention relates to a semiconductor packaging technology, in particular to a packaging substrate with embedded traces and a manufacturing method thereof.

背景技术Background technique

随着电子产业的蓬勃发展,电子产品在型态上趋于轻薄短小,在功能上则朝高性能、高功能、高速化的研发方向。因此,为满足半导体装置的高集成度(Integration)及微型化(Miniaturization)需求,故于封装制程中,常常采用具有高密度及细间距的线路的封装基板。With the vigorous development of the electronic industry, electronic products tend to be thinner and smaller in form, and are developing toward high-performance, high-function, and high-speed research and development in terms of function. Therefore, in order to meet the requirements of high integration and miniaturization of semiconductor devices, packaging substrates with high-density and fine-pitch circuits are often used in the packaging process.

如图1所示,现有封装基板1包含一具有多个导电柱100的核心层10、分别设于该核心层10相对两侧的多个介电层11、及设于各该介电层11上的线路层12,以借由该多个导电柱100电性导通位于该核心层10相对两侧的该些线路层12,其中,该线路层12借由导电体120电性连接该导电柱100。As shown in FIG. 1 , an existing packaging substrate 1 includes a core layer 10 having a plurality of conductive pillars 100, a plurality of dielectric layers 11 respectively disposed on opposite sides of the core layer 10, and a plurality of dielectric layers 11 disposed on each of the dielectric layers. 11, so as to electrically connect the circuit layers 12 on opposite sides of the core layer 10 through the plurality of conductive pillars 100, wherein the circuit layer 12 is electrically connected to the core layer 12 through the conductor 120. Conductive column 100.

然而,现有封装基板1中,该导电体120的制作先于该介电层11上以激光、机钻或蚀刻等方式形成盲孔,再于该盲孔中填入导电材,故于形成该盲孔的过程中,往往因工作误差而偏位,导致该盲孔无法对齐该导电柱100,使得该导电体120无法有效连接该导电柱100,造成该封装基板1的电性连接不佳的问题。However, in the existing packaging substrate 1, the electrical conductor 120 is formed prior to forming a blind hole on the dielectric layer 11 by means of laser, machine drilling or etching, and then fills the blind hole with conductive material, so the formation During the process of the blind hole, the position is often misaligned due to working errors, resulting in that the blind hole cannot be aligned with the conductive pillar 100, so that the conductor 120 cannot be effectively connected to the conductive pillar 100, resulting in poor electrical connection of the packaging substrate 1 The problem.

因此,如何克服上述现有技术的种种问题,实已成目前亟欲解决的课题。Therefore, how to overcome the various problems of the above-mentioned prior art has become an urgent problem to be solved at present.

发明内容Contents of the invention

鉴于上述现有技术的种种缺失,本发明提供一种封装基板及其制法,可至少部分地解决上述现有技术中的种种问题。In view of the various deficiencies in the above-mentioned prior art, the present invention provides a packaging substrate and a manufacturing method thereof, which can at least partly solve the above-mentioned various problems in the prior art.

本发明的封装基板,包括:绝缘层,其具有相对两侧,且该绝缘层的至少一侧中形成有盲孔;线路层,其嵌埋于该绝缘层中并外露于该绝缘层的相对两侧的至少一侧的表面;对位部,其嵌埋于该绝缘层中并外露于该绝缘层的相对两侧的至少一侧的表面,以对应于该绝缘层中的盲孔;以及导电体,其形成于该盲孔中。The packaging substrate of the present invention includes: an insulating layer having opposite two sides, and a blind hole is formed in at least one side of the insulating layer; a circuit layer embedded in the insulating layer and exposed on the opposite side of the insulating layer the surface of at least one of the two sides; the counter part, which is embedded in the insulating layer and exposed to the surface of at least one of the opposite sides of the insulating layer, so as to correspond to the blind hole in the insulating layer; and A conductor is formed in the blind hole.

本发明还提供一种封装基板的制法,包括:提供一具有相对两侧的绝缘层;将线路层及对位部压入绝缘层的相对两侧的至少一侧中,使该线路层及该对位部嵌埋于该绝缘层中;于该绝缘层的相对两侧的至少一侧对应该对位部之处形成盲孔;以及于该盲孔中形成导电体。The present invention also provides a method for manufacturing a packaging substrate, including: providing an insulating layer with opposite two sides; pressing the circuit layer and the alignment part into at least one of the opposite two sides of the insulating layer, so that the circuit layer and the The alignment portion is embedded in the insulating layer; a blind hole is formed at least one of opposite sides of the insulating layer corresponding to the alignment portion; and a conductor is formed in the blind hole.

前述的封装基板及其制法中,该对位部为环体。In the aforementioned packaging substrate and its manufacturing method, the alignment portion is a ring body.

前述的封装基板及其制法中,该绝缘层形成于一核心层的相对两表面上,以于该核心层的相对两表面上均形成该导电体,且该核心层中具有导电柱,以令该核心层的相对两表面上的该导电体均电性连接该导电柱。In the aforementioned packaging substrate and its manufacturing method, the insulating layer is formed on two opposite surfaces of a core layer, so that the conductors are formed on both opposite surfaces of the core layer, and the core layer has conductive pillars, so as to The conductors on the opposite surfaces of the core layer are electrically connected to the conductive pillars.

前述的封装基板及其制法中,该绝缘层的相对两侧分别形成有该对位部,以于对应该对位部之处形成该盲孔,以令该绝缘层的相对两侧的该盲孔相互连通。例如,该绝缘层的相对两侧的该盲孔中形成相互连接的导电柱,以作为该导电体。In the aforementioned packaging substrate and its manufacturing method, the alignment portions are respectively formed on opposite sides of the insulating layer, so that the blind holes are formed at positions corresponding to the alignment portions, so that the opposite sides of the insulating layer The blind holes communicate with each other. For example, interconnected conductive columns are formed in the blind holes on opposite sides of the insulating layer as the conductors.

前述的封装基板及其制法中,还包括提供一具有导电柱的核心层及结合于该核心层相对两侧的增层结构,以令该绝缘层形成于至少一该增层结构上,使该增层结构上配置有该导电体,且该增层结构具有电性连接该导电柱与该导电体的布线层In the aforementioned packaging substrate and its manufacturing method, it also includes providing a core layer with conductive pillars and a build-up structure combined on opposite sides of the core layer, so that the insulating layer is formed on at least one of the build-up structures, so that The conductor is disposed on the build-up structure, and the build-up structure has a wiring layer electrically connecting the conductive column and the conductor

由上可知,本发明的封装基板及其制法中,主要借由该对位部的设计,以于形成该盲孔的过程中,只需对齐该对位部进行成孔作业,即可避免工作误差而偏位的问题,故相较于现有技术,本发明的盲孔可有效对齐该核心层中的导电柱,使该导电体有效连接该导电柱,因而可避免该封装基板的电性连接不佳的问题。It can be seen from the above that in the packaging substrate and its manufacturing method of the present invention, the design of the alignment part is mainly used, so that in the process of forming the blind hole, only the alignment part is needed to perform the hole forming operation to avoid Therefore, compared with the prior art, the blind vias of the present invention can effectively align the conductive pillars in the core layer, so that the conductors can be effectively connected to the conductive pillars, thus avoiding the electric shock of the package substrate. Problems with poor sexual connection.

附图说明Description of drawings

图1为现有封装基板的剖面示意图。FIG. 1 is a schematic cross-sectional view of a conventional packaging substrate.

图2A至图2F为本发明的封装基板的制法的第一实施例的剖视示意图。2A to 2F are schematic cross-sectional views of the first embodiment of the manufacturing method of the packaging substrate of the present invention.

图3A至图3D为本发明的封装基板的制法的第二实施例的剖视示意图。3A to 3D are schematic cross-sectional views of a second embodiment of the manufacturing method of the packaging substrate of the present invention.

图4A至图4F为本发明的封装基板的制法的第三实施例的剖视示意图。4A to 4F are schematic cross-sectional views of a third embodiment of the manufacturing method of the packaging substrate of the present invention.

其中,附图标记说明如下:Wherein, the reference signs are explained as follows:

1,2,3,4:封装基板1, 2, 3, 4: Package substrate

10,23:核心层10, 23: core layer

100,230:导电柱100, 230: conductive column

11:介电层11: Dielectric layer

12,21:线路层12, 21: Line layer

120,25,35,45:导电体120, 25, 35, 45: Conductor

20:承载件20: Carrier

200:金属层200: metal layer

21a,22a,23a,23b,24a,34a:表面21a, 22a, 23a, 23b, 24a, 34a: surface

22:对位部22: Counterpoint

231:绝缘填充材231: insulating filler

232:内层线路232: inner line

24,34:绝缘层24, 34: insulating layer

240,440:盲孔240, 440: blind hole

25a:金属材25a: metal material

340:通孔340: Through hole

341:第一盲孔341: First blind hole

342:第二盲孔342: Second blind hole

35a:第一导电柱35a: the first conductive column

35b:第二导电柱35b: the second conductive column

4a:基板本体4a: Substrate body

40:增层结构40: Build-up structure

400:介电体400: Dielectric

401:布线层401: wiring layer

41:硬质层41: hard layer

45a:晶种层45a: Seed layer

S:交界面。S: interface.

具体实施方式Detailed ways

以下借由特定的具体实施例说明本发明的实施方式,熟悉此技艺的人士可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。The implementation of the present invention will be described below with reference to specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供熟悉此技艺的人士的了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如「上」、「第一」、「第二」及「一」等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for the understanding and reading of those familiar with this technology, and are not used to limit the implementation of the present invention Therefore, it has no technical substantive meaning. Any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of this invention without affecting the effect and purpose of the present invention. The technical content disclosed by the invention must be within the scope covered. At the same time, terms such as "above", "first", "second" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of the present invention. The change or adjustment of the relative relationship shall also be regarded as the implementable scope of the present invention without substantive change of the technical content.

图2A至图2F为本发明的封装基板2的制法的第一实施例的剖视示意图。于本实施例中,该封装基板2为具有核心层(core)的态样。2A to 2F are schematic cross-sectional views of the first embodiment of the manufacturing method of the packaging substrate 2 of the present invention. In this embodiment, the package substrate 2 has a core layer.

如图2A所示,于一承载件20上形成一线路层21及一对位部22。As shown in FIG. 2A , a circuit layer 21 and an alignment portion 22 are formed on a carrier 20 .

于本实施例中,该承载件20上具有一金属层200,以形成如铜箔基板的承载结构。例如,可借由该金属层200以电镀铜材的方式形成该线路层21及该对位部22,且该对位部22为金属环体。In this embodiment, the carrier 20 has a metal layer 200 to form a carrier structure such as a copper foil substrate. For example, the circuit layer 21 and the alignment portion 22 can be formed by electroplating copper through the metal layer 200 , and the alignment portion 22 is a metal ring.

如图2B所示,于一绝缘材制的核心层23的相对两表面23a,23b上分别形成一具有相对两侧的绝缘层24,以令该绝缘层24的其中一侧结合于该核心层23上。接着,将该承载件20以其上的线路层21及该对位部22结合于该绝缘层24的另一侧上。As shown in FIG. 2B, an insulating layer 24 with opposite two sides is respectively formed on the opposite two surfaces 23a, 23b of an insulating core layer 23, so that one side of the insulating layer 24 is bonded to the core layer. 23 on. Then, the carrier 20 , the circuit layer 21 thereon and the alignment portion 22 are combined on the other side of the insulating layer 24 .

于本实施例中,该核心层23中形成有至少一导电柱230,且可依需求于该核心层23上形成电性连接该导电柱230的内层线路232。例如,该导电柱230可为空心铜柱,其内填入绝缘填充材231。应可理解地,该导电柱230亦可为实心铜柱而无需填入该绝缘填充材231。In this embodiment, at least one conductive pillar 230 is formed in the core layer 23 , and an inner circuit 232 electrically connected to the conductive pillar 230 can be formed on the core layer 23 as required. For example, the conductive column 230 can be a hollow copper column filled with an insulating filling material 231 . It should be understood that the conductive pillar 230 can also be a solid copper pillar without filling the insulating filling material 231 .

再者,形成该绝缘层24的材质为如预浸材(Prepreg,简称PP)或其它合适材质的介电材。Furthermore, the insulating layer 24 is made of a dielectric material such as prepreg (PP for short) or other suitable materials.

另外,该两承载件20均以压合方式将该线路层21及该对位部22压入该绝缘层24的另一侧中,使该线路层21及该对位部22嵌埋于该绝缘层24中。In addition, the two supporting parts 20 press the circuit layer 21 and the alignment portion 22 into the other side of the insulating layer 24 by pressing, so that the circuit layer 21 and the alignment portion 22 are embedded in the insulating layer 24. Insulation layer 24.

如图2C所示,以剥离或蚀刻方式移除该承载件20,而保留该金属层200。As shown in FIG. 2C , the carrier 20 is removed by stripping or etching, while the metal layer 200 remains.

如图2D所示,于该绝缘层24对应该对位部22之处形成盲孔240,以令该导电柱230外露于该盲孔240。As shown in FIG. 2D , a blind hole 240 is formed at the position of the insulating layer 24 corresponding to the alignment portion 22 , so that the conductive post 230 is exposed to the blind hole 240 .

于本实施例中,以激光方式形成该盲孔240。例如,将激光对准该对位部22的环圈中央,以烧灼该环圈内的绝缘层24直至露出该导电柱230的端面。In this embodiment, the blind hole 240 is formed by laser. For example, the laser is aimed at the center of the ring of the aligning portion 22 to burn the insulating layer 24 in the ring until the end surface of the conductive post 230 is exposed.

如图2E所示,于该绝缘层24上形成金属材25a,且该金属材25a填入该盲孔240中以接触该导电柱230。As shown in FIG. 2E , a metal material 25 a is formed on the insulating layer 24 , and the metal material 25 a is filled into the blind hole 240 to contact the conductive pillar 230 .

于本实施例中,可借由该金属层200以电镀铜材的方式形成该金属材25a。In this embodiment, the metal material 25 a can be formed by electroplating copper material through the metal layer 200 .

如图2F所示,移除该绝缘层24上的金属材25a及该金属层200,而仅保留该盲孔240中的金属材25a,供作为导电体25。As shown in FIG. 2F , the metal material 25 a on the insulating layer 24 and the metal layer 200 are removed, and only the metal material 25 a in the blind hole 240 is reserved as the conductor 25 .

于本实施例中,该线路层21与该对位部22外露于该绝缘层24的表面24a。例如,该线路层21的表面21a与该对位部22的表面22a齐平(或略低于)该绝缘层24的表面24a。In this embodiment, the wiring layer 21 and the alignment portion 22 are exposed on the surface 24 a of the insulating layer 24 . For example, the surface 21 a of the circuit layer 21 is flush with (or slightly lower than) the surface 24 a of the insulating layer 24 with the surface 22 a of the alignment portion 22 .

再者,该导电体25呈锥状,其以较窄端面连接该导电柱230,且该导电体25外露于该绝缘层24的表面24a。例如,该导电体25的较宽端面齐平(或略低于)该绝缘层24的表面24a。Furthermore, the conductive body 25 is tapered and connected to the conductive post 230 with a narrower end surface, and the conductive body 25 is exposed on the surface 24 a of the insulating layer 24 . For example, the wider end surface of the conductor 25 is flush with (or slightly lower than) the surface 24 a of the insulating layer 24 .

因此,本发明的封装基板2借由将该对位部22压入该绝缘层24中,以于形成该盲孔240的过程中,只需将激光对准该对位部22,即可准确将该盲孔240形成于预定之处,因而能避免工作误差所致的偏位问题,故相较于现有技术,本发明的盲孔240能有效对齐该导电柱230,使各该导电体25能有效连接该导电柱230,因而能避免该封装基板2的电性连接不佳的问题。Therefore, in the package substrate 2 of the present invention, by pressing the alignment portion 22 into the insulating layer 24, in the process of forming the blind hole 240, only the laser is aimed at the alignment portion 22 to accurately The blind hole 240 is formed at a predetermined position, thereby avoiding the misalignment problem caused by working errors. Therefore, compared with the prior art, the blind hole 240 of the present invention can effectively align the conductive pillar 230, so that each conductor 25 can effectively connect the conductive pillars 230 , thus avoiding the problem of poor electrical connection of the package substrate 2 .

图3A至图3D为本发明的封装基板3的制法的第二实施例的剖视示意图。本实施例与第一实施例的差异在于该封装基板3为无核心层(coreless)的态样,故以下不再赘述相同处。3A to 3D are schematic cross-sectional views of a second embodiment of the manufacturing method of the packaging substrate 3 of the present invention. The difference between this embodiment and the first embodiment lies in that the packaging substrate 3 is coreless, so the similarities will not be repeated below.

如图3A所示,提供一绝缘层34,其具有相对两侧。接着,将两承载件20以其上的线路层21及该对位部22结合于该绝缘层34的相对两侧上。As shown in FIG. 3A, an insulating layer 34 is provided having opposite sides. Then, the two carriers 20 , the circuit layer 21 thereon and the alignment portion 22 are combined on opposite sides of the insulating layer 34 .

于本实施例中,形成该绝缘层34的材质为如预浸材(PP)或其它适当材质的介电材。In this embodiment, the insulating layer 34 is made of prepreg (PP) or other suitable dielectric materials.

再者,该些承载件20均以压合方式将该线路层21及该对位部22压入该绝缘层34的相对两侧中,使该线路层21及该对位部22嵌埋于该绝缘层34中。Moreover, these bearing members 20 all press the circuit layer 21 and the alignment portion 22 into the opposite sides of the insulating layer 34 by pressing, so that the circuit layer 21 and the alignment portion 22 are embedded in In the insulating layer 34 .

如图3B所示,待移除该承载件20而保留该金属层200后,于该绝缘层34对应该对位部22之处形成第一盲孔341与第二盲孔342,以令该第一盲孔341连通该第二盲孔342而形成一贯穿该绝缘层34的通孔340。As shown in FIG. 3B , after the carrier 20 is removed and the metal layer 200 remains, a first blind hole 341 and a second blind hole 342 are formed at the position of the insulating layer 34 corresponding to the alignment portion 22, so that the The first blind hole 341 communicates with the second blind hole 342 to form a through hole 340 penetrating through the insulating layer 34 .

于本实施例中,以激光方式形成该第一盲孔341与第二盲孔342。例如,将激光对准该对位部22的环圈,以烧灼该环圈内的绝缘层34直至该第一盲孔341连通该第二盲孔342。In this embodiment, the first blind hole 341 and the second blind hole 342 are formed by laser. For example, the laser is aimed at the ring of the aligning portion 22 to burn the insulating layer 34 in the ring until the first blind hole 341 communicates with the second blind hole 342 .

如图3C所示,于该绝缘层34上形成金属材25a,且该金属材25a填入该第一盲孔341与该第二盲孔342中,以作为第一导电柱35a与第二导电柱35b。As shown in FIG. 3C, a metal material 25a is formed on the insulating layer 34, and the metal material 25a is filled in the first blind hole 341 and the second blind hole 342 to serve as the first conductive column 35a and the second conductive column. Column 35b.

于本实施例中,可借由该金属层200以电镀铜材的方式形成该金属材25a,且该第一导电柱35a连接该第二导电柱35b。In this embodiment, the metal material 25 a can be formed by electroplating copper material through the metal layer 200 , and the first conductive pillar 35 a is connected to the second conductive pillar 35 b.

如图3D所示,移除该绝缘层34上的金属材25a及金属层200,而仅保留该通孔340中的金属材25a(即该第一导电柱35a与第二导电柱35b),供作为柱状导电体35。As shown in FIG. 3D, the metal material 25a and the metal layer 200 on the insulating layer 34 are removed, and only the metal material 25a in the through hole 340 (ie, the first conductive pillar 35a and the second conductive pillar 35b) remains, Provided as the columnar conductor 35 .

于本实施例中,该第一导电柱35a与该第二导电柱35b均呈锥状,且两者以其较窄端面相对接,如图3D所示的交界面S。In this embodiment, both the first conductive pillar 35 a and the second conductive pillar 35 b are tapered, and the two are connected by their narrower end surfaces, as shown in the interface S shown in FIG. 3D .

再者,该第一导电柱35a与该第二导电柱35b外露于该绝缘层34的表面34a。例如,该第一导电柱35a的较宽端面与该第二导电柱35b的较宽端面齐平(或略低于)该绝缘层34的表面34a。Furthermore, the first conductive pillar 35 a and the second conductive pillar 35 b are exposed on the surface 34 a of the insulating layer 34 . For example, the wider end surface of the first conductive pillar 35 a is flush with (or slightly lower than) the surface 34 a of the insulating layer 34 with the wider end surface of the second conductive pillar 35 b.

另外,该线路层21与该对位部22外露于该绝缘层34的表面34a。例如,该线路层21的表面21a与该对位部22的表面22a齐平(或略低于)该绝缘层34的表面34a。In addition, the circuit layer 21 and the alignment portion 22 are exposed on the surface 34 a of the insulating layer 34 . For example, the surface 21 a of the wiring layer 21 is flush with (or slightly lower than) the surface 34 a of the insulating layer 34 with the surface 22 a of the alignment portion 22 .

于其它实施例中,可于该绝缘层34上形成线路增层结构(图略),以令该线路增层结构电性连接该导电体35及线路层21。In other embodiments, a circuit build-up structure (not shown) may be formed on the insulating layer 34 so that the circuit build-up structure is electrically connected to the conductor 35 and the circuit layer 21 .

因此,本发明的封装基板3借由将该对位部22压入该绝缘层34中,以于形成该第一盲孔341与该第二盲孔342的过程中,只需将激光对准该对位部22,即可准确将该第一盲孔341与该第二盲孔342形成于预定之处,因而能避免工作误差所致的偏位问题,故本发明的封装基板3应用于无核心层(coreless)形式时,该第一盲孔341与该第二盲孔342亦能有效相互对齐,使该第一导电柱35a与该第二导电柱35b仍能有效对接,因而能避免该封装基板3的电性连接不佳的问题。Therefore, the packaging substrate 3 of the present invention only needs to align the laser light during the process of forming the first blind hole 341 and the second blind hole 342 by pressing the alignment portion 22 into the insulating layer 34. The alignment part 22 can accurately form the first blind hole 341 and the second blind hole 342 at predetermined positions, thereby avoiding the problem of misalignment caused by working errors. Therefore, the packaging substrate 3 of the present invention is applied to When there is no core layer (coreless), the first blind hole 341 and the second blind hole 342 can also be effectively aligned with each other, so that the first conductive pillar 35a and the second conductive pillar 35b can still be effectively butted, thus avoiding The electrical connection of the packaging substrate 3 is poor.

图4A至图4F为本发明的封装基板4的制法的第三实施例的剖视示意图。于本实施例中,该封装基板4为具有核心层(core)及增层结构的态样。4A to 4F are schematic cross-sectional views of a third embodiment of the manufacturing method of the packaging substrate 4 of the present invention. In this embodiment, the packaging substrate 4 has a core layer (core) and a build-up layer structure.

如图4A所示,提供一基板本体4a,其具有该核心层23及配置于该核心层23相对两侧上的增层结构40。As shown in FIG. 4A , a substrate body 4 a is provided, which has the core layer 23 and build-up structures 40 disposed on opposite sides of the core layer 23 .

于本实施例中,该核心层23中形成有多个该导电柱230,且可依需求于该核心层23上形成电性连接该导电柱230的内层线路232。例如,该导电柱230可为空心铜柱,其内填入绝缘填充材231。应可理解地,该导电柱230亦可为实心铜柱而无需填入该绝缘填充材231。In this embodiment, a plurality of conductive pillars 230 are formed in the core layer 23 , and an inner circuit 232 electrically connected to the conductive pillars 230 can be formed on the core layer 23 as required. For example, the conductive column 230 can be a hollow copper column filled with an insulating filling material 231 . It should be understood that the conductive pillar 230 can also be a solid copper pillar without filling the insulating filling material 231 .

再者,该增层结构40具有一由多个介电层所组成的介电体400及形成于各该介电层上的布线层401。Furthermore, the build-up structure 40 has a dielectric body 400 composed of a plurality of dielectric layers and a wiring layer 401 formed on each of the dielectric layers.

如图4B所示,提供该承载件20,其上形成有该线路层21及该对位部22。As shown in FIG. 4B , the carrier 20 is provided, on which the circuit layer 21 and the alignment portion 22 are formed.

于本实施例中,该承载件20上具有一金属层200,以形成如铜箔基板的承载结构。In this embodiment, the carrier 20 has a metal layer 200 to form a carrier structure such as a copper foil substrate.

如图4C所示,将该承载件20借由该绝缘层24结合于该核心层23的其中一增层结构40上,使该承载件20以其上的线路层21及该对位部22嵌埋于该绝缘层24中。接着,以剥离或蚀刻方式移除该承载件20,而保留该金属层200。As shown in FIG. 4C, the carrier 20 is combined on one of the build-up structures 40 of the core layer 23 through the insulating layer 24, so that the circuit layer 21 on the carrier 20 and the alignment part 22 embedded in the insulating layer 24 . Then, the carrier 20 is removed by stripping or etching, while the metal layer 200 remains.

于本实施例中,该承载件20采用压合方式结合于该核心层23上。例如,借由一如金属材的硬质层41与另一绝缘层24结合于该核心层23的另一增层结构40上。应可理解地,该核心层23的另一增层结构40上亦可结合另一具有线路层21及该对位部22的承载件20。In this embodiment, the carrier 20 is bonded to the core layer 23 by pressing. For example, another build-up structure 40 of the core layer 23 is combined with another insulating layer 24 through a hard layer 41 such as a metal material. It should be understood that another carrier 20 having a circuit layer 21 and the alignment portion 22 may also be combined with another build-up structure 40 of the core layer 23 .

如图4D所示,于该些绝缘层24对应该对位部22之处形成盲孔240,以令该增层结构40的布线层401的部分表面外露于该盲孔240。之后,移除该承载件20。As shown in FIG. 4D , a blind hole 240 is formed at the position of the insulating layers 24 corresponding to the alignment portion 22 , so that part of the surface of the wiring layer 401 of the build-up structure 40 is exposed to the blind hole 240 . Afterwards, the carrier 20 is removed.

于本实施例中,以激光方式形成该盲孔240。例如,将激光对准该对位部22的环圈,以烧灼该环圈内的绝缘层24直至露出该布线层401的部分表面。In this embodiment, the blind hole 240 is formed by laser. For example, the laser is aimed at the ring of the aligning portion 22 to burn the insulating layer 24 inside the ring until a part of the surface of the wiring layer 401 is exposed.

再者,亦可借由激光方式于该硬质层41及该核心层23的另一增层结构40上形成盲孔440,以令该增层结构40的布线层401的部分表面外露于该盲孔440。Furthermore, a blind hole 440 may also be formed on the hard layer 41 and another build-up structure 40 of the core layer 23 by means of a laser, so that part of the surface of the wiring layer 401 of the build-up structure 40 is exposed to the Blind hole 440 .

如图4E所示,进行图案化制程,于该绝缘层24上的金属层200与硬质层41上及盲孔240中形成一晶种层45a,再借由该晶种层45a电镀形成一金属材25a,且该金属材25a填入该盲孔240中。接着,移除该金属层200与硬质层41上的金属材25a及晶种层45a,而仅保留该盲孔240处的金属材25a及晶种层45a。之后,蚀刻移除外露的金属层200与硬质层41,以形成图案化线路,供作为导电体45。As shown in FIG. 4E, a patterning process is performed to form a seed layer 45a on the metal layer 200 and the hard layer 41 on the insulating layer 24 and in the blind hole 240, and then form a seed layer 45a by electroplating. The metal material 25a is filled into the blind hole 240 . Next, the metal material 25a and the seed layer 45a on the metal layer 200 and the hard layer 41 are removed, and only the metal material 25a and the seed layer 45a at the blind hole 240 remain. Afterwards, the exposed metal layer 200 and the hard layer 41 are removed by etching to form a patterned circuit for serving as the conductor 45 .

于本实施例中,可于该增层结构40上以压合方式形成更多层的线路层21,如图4F所示。In this embodiment, more circuit layers 21 can be formed on the build-up structure 40 by lamination, as shown in FIG. 4F .

因此,本发明的封装基板4借由将该对位部22压入该绝缘层24中,以于形成该盲孔240的过程中,只需将激光对准该对位部22,即可准确将该盲孔240形成于预定之处,因而能避免工作误差所致的偏位问题,故本发明的盲孔240能有效形成于预定之处,使各该导电体25能有效连接该布线层401,因而能避免该封装基板4的电性连接不佳的问题。Therefore, in the package substrate 4 of the present invention, by pressing the alignment portion 22 into the insulating layer 24, in the process of forming the blind hole 240, only the laser is aimed at the alignment portion 22 to accurately The blind hole 240 is formed at a predetermined position, thereby avoiding the misalignment problem caused by working errors, so the blind hole 240 of the present invention can be effectively formed at a predetermined position, so that each conductor 25 can be effectively connected to the wiring layer 401 , thus avoiding the problem of poor electrical connection of the packaging substrate 4 .

本发明提供一种封装基板2,3,4,包括:一具有相对两侧的绝缘层24,34、一嵌埋于该绝缘层24,34中的线路层21、至少一嵌埋于该绝缘层24,34中的对位部22、以及至少一对应该对位部22而嵌埋于该绝缘层24,34中的导电体25,35,45。The present invention provides a package substrate 2, 3, 4, comprising: an insulating layer 24, 34 with opposite sides, a circuit layer 21 embedded in the insulating layer 24, 34, at least one layer embedded in the insulating layer The alignment portion 22 in the layer 24, 34, and at least one pair of conductors 25, 35, 45 embedded in the insulating layer 24, 34 corresponding to the alignment portion 22.

所述的线路层21外露于该绝缘层24,34的相对两侧的至少一侧的表面24a,34a。The circuit layer 21 is exposed on at least one surface 24a, 34a of the two opposite sides of the insulation layer 24, 34.

所述的对位部22外露于该绝缘层24,34的相对两侧的至少一侧的表面24a,34a,以于该绝缘层24,34对应该对位部22之处形成盲孔240(第一盲孔341与第二盲孔342)。The alignment portion 22 is exposed on at least one surface 24a, 34a of the opposite sides of the insulating layer 24, 34, so as to form a blind hole 240 ( The first blind hole 341 and the second blind hole 342).

所述的导电体25,35,45形成于该盲孔240(第一盲孔341与第二盲孔342)中。The conductors 25, 35, 45 are formed in the blind hole 240 (the first blind hole 341 and the second blind hole 342).

于一实施例中,所述的封装基板2还包括一核心层23,以令该绝缘层24形成于该核心层23的相对两表面23a,23b上,使该核心层23的相对两表面23a,23b上均配置有该导电体25,且该核心层23中具有导电柱230,以令该核心层23的相对两表面23a,23b上的该导电体25均电性连接该导电柱230。In one embodiment, the package substrate 2 further includes a core layer 23, so that the insulating layer 24 is formed on the two opposite surfaces 23a, 23b of the core layer 23, so that the two opposite surfaces 23a of the core layer 23 , 23b are equipped with the conductor 25, and the core layer 23 has a conductive pillar 230, so that the conductor 25 on the opposite surfaces 23a, 23b of the core layer 23 is electrically connected to the conductive pillar 230.

于一实施例中,该绝缘层34的相对两侧分别形成有该对位部22,以于对应各该对位部22之处形成该第一盲孔341与第二盲孔342,以令该绝缘层34的相对两侧的该第一盲孔341与第二盲孔342相互连通。例如,该绝缘层34的相对两侧的该第一盲孔341与第二盲孔342中形成相互连接的第一导电柱35a与第二导电柱35b,以作为该导电体35。In one embodiment, the alignment portions 22 are respectively formed on opposite sides of the insulating layer 34, so that the first blind hole 341 and the second blind hole 342 are formed at positions corresponding to the alignment portions 22, so that The first blind hole 341 and the second blind hole 342 on opposite sides of the insulating layer 34 communicate with each other. For example, a first conductive post 35 a and a second conductive post 35 b connected to each other are formed in the first blind hole 341 and the second blind hole 342 on opposite sides of the insulating layer 34 as the conductor 35 .

于一实施例中,所述的封装基板4还包括一核心层23及结合于该核心层23相对两侧的增层结构40,以令该绝缘层24形成于至少一该增层结构40上,使该增层结构40上配置有该导电体45,且该核心层23中具有导电柱230,该增层结构40具有电性连接该导电柱230与该导电体45的布线层401。In one embodiment, the packaging substrate 4 further includes a core layer 23 and build-up structures 40 bonded to opposite sides of the core layer 23, so that the insulating layer 24 is formed on at least one of the build-up structures 40 , so that the conductor 45 is disposed on the build-up structure 40 , and the core layer 23 has a conductive column 230 , and the build-up structure 40 has a wiring layer 401 electrically connecting the conductive column 230 and the conductor 45 .

综上所述,本发明的封装基板及其制法,借由该对位部的设计,以于形成该盲孔的过程中,只需对齐该对位部进行成孔作业,即可避免工作误差而偏位的问题,故本发明的封装基板能确保电性连接正常。To sum up, the packaging substrate and its manufacturing method of the present invention, by virtue of the design of the alignment part, in the process of forming the blind hole, only need to align the alignment part to perform the hole forming operation, which can avoid work Therefore, the packaging substrate of the present invention can ensure normal electrical connection.

上述实施例仅用以例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟习此项技艺的人士均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。The above-mentioned embodiments are only used to illustrate the principles and effects of the present invention, but not to limit the present invention. Anyone skilled in the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.

Claims (12)

1. A package substrate, comprising:
an insulating layer having opposite sides, and having blind holes formed in at least one side thereof;
the circuit layer is embedded in the insulating layer and is exposed on the surface of at least one of the two opposite sides of the insulating layer;
the alignment part is embedded in the insulating layer and exposed out of the surface of at least one of the two opposite sides of the insulating layer so as to correspond to the blind hole in the insulating layer; and
and an electrical conductor formed in the blind hole.
2. The package substrate of claim 1, wherein the alignment portion is a ring.
3. The package substrate of claim 1, further comprising a core layer formed on opposite surfaces of the core layer such that the conductors are disposed on opposite surfaces of the core layer, and wherein the core layer has conductive pillars therein such that the conductors on opposite surfaces of the core layer are electrically connected to the conductive pillars.
4. The package substrate of claim 1, wherein the alignment portion and the blind hole corresponding to the alignment portion are formed on opposite sides of the insulating layer, respectively, so that the blind holes on opposite sides of the insulating layer are in communication with each other.
5. The package substrate of claim 4, wherein conductive pillars are formed in the blind via holes on opposite sides of the insulating layer to serve as the conductors.
6. The package substrate of claim 1, further comprising a core layer having conductive pillars and build-up structures bonded to opposite sides of the core layer, such that the insulating layer is formed on at least one of the build-up structures, the build-up structures having the conductive body disposed thereon, and the build-up structures having wiring layers electrically connecting the conductive pillars and the conductive body.
7. A method of fabricating a package substrate, comprising:
providing an insulating layer with two opposite sides;
pressing the circuit layer and the alignment part into at least one of two opposite sides of the insulating layer, so that the circuit layer and the alignment part are embedded in the insulating layer;
forming a blind hole on at least one of two opposite sides of the insulating layer corresponding to the alignment part; and
and forming a conductor in the blind hole.
8. The method of claim 7, wherein the alignment portion is a ring.
9. The method of claim 7, wherein the insulating layer is formed on two opposite surfaces of a core layer to form the conductive body on two opposite surfaces of the core layer, and the core layer has conductive posts therein to electrically connect the conductive bodies on two opposite surfaces of the core layer to the conductive posts.
10. The method of claim 7, wherein the alignment portions are formed on opposite sides of the insulating layer, respectively, so that the blind holes are formed at positions corresponding to the alignment portions, so that the blind holes on opposite sides of the insulating layer are communicated with each other.
11. The method of claim 10, wherein conductive pillars are formed in the blind holes on opposite sides of the insulating layer to serve as the conductors.
12. The method of claim 7 further comprising providing a core layer having conductive pillars and build-up structures bonded to opposite sides of the core layer such that the insulating layer is formed on at least one of the build-up structures with the conductive body disposed thereon, and the build-up structure has a wiring layer electrically connecting the conductive pillars and the conductive body.
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