CN116435293B - Bonding and flip-chip combined stacked chip structure with double-sided wire bonding and preparation method - Google Patents
Bonding and flip-chip combined stacked chip structure with double-sided wire bonding and preparation method Download PDFInfo
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- CN116435293B CN116435293B CN202310705441.0A CN202310705441A CN116435293B CN 116435293 B CN116435293 B CN 116435293B CN 202310705441 A CN202310705441 A CN 202310705441A CN 116435293 B CN116435293 B CN 116435293B
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- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L21/561—Batch processing
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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Abstract
The invention provides a bonding and flip-chip combined stacked chip structure with double-sided wire bonding and a preparation method, and relates to the technical field of semiconductors. In the invention, the second die and the third die are respectively arranged at two sides of the first die, so that the distance between the dies is shortened, the connecting circuit between the dies is shortened, the connecting resistance is reduced, the signal delay is reduced, the high-frequency characteristic is better, and the electrical performance of the product is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a bonding and flip-chip combined stacked chip structure with double-sided wire bonding and a preparation method thereof.
Background
With the continuous improvement of the manufacturing process level of integrated circuits, the chip scale is continuously increased, and more functional modules are integrated into one chip, so that the reliability of the whole system is improved.
The invention of the authorized bulletin number is CN111710662B discloses a general multi-die silicon stacking interconnection structure, which relates to the technical field of semiconductors, and comprises a substrate, a silicon connecting layer and a plurality of dies, wherein the dies are stacked and arranged on the silicon connecting layer in a two-dimensional stacking mode, special silicon stacking connection points for signal extraction are arranged in the dies and are connected to connection point extraction ends through RDL layers, die signals are extracted to the connection point extraction ends through the silicon stacking connection points, and the connection point extraction ends can be connected to other dies through cross-die connection in two directions in the silicon connecting layer; the interconnection mode between bare chips in the structure is more flexible, different system level packages can be realized rapidly, the input and output ports of the bare chips are not occupied, the connecting channels are not limited by the number of the input and output ports, and the structure has the characteristics of high connectivity, high speed, stability, low power consumption and miniaturization.
However, in the above structure, the dies need longer line connection for realizing interconnection, the connection resistance is larger, and the signal transmission delay between the dies is higher.
Disclosure of Invention
The invention provides a bonding and flip-chip combined stacked chip structure with double-sided routing and a preparation method thereof, which are used for solving the technical problems that the current bare chips are connected by longer circuits, the connection resistance is larger and the signal transmission delay between the bare chips is higher.
In order to solve the technical problems, the invention discloses a bonding and flip-chip combined stacked chip structure with double-sided wire bonding, which comprises the following components: the semiconductor device comprises a first bare chip and a compound layer, wherein the lower surface of the first bare chip is provided with a second bare chip, the upper surface of the first bare chip is provided with a third bare chip, the lower surface of the first bare chip is provided with a plurality of first metal bumps, a plurality of through silicon vias are arranged in the first bare chip, two ends of each through silicon via penetrate through the upper side and the lower side of the first bare chip respectively, the upper end and the lower end of each through silicon via are provided with a third metal bump and a second metal bump respectively, the second bare chip is connected with the lower end of the second metal bump through a second lead, the third bare chip is connected with the upper end of the third metal bump through a third lead, and the compound layer is coated on the peripheries of the first bare chip, the second bare chip, the third bare chip and the first metal bumps.
Preferably, the second die is connected to the lower surface of the first die through a first adhesive layer, the third die is connected to the upper surface of the first die through a second adhesive layer, and the first adhesive layer and the second adhesive layer are both made of adhesive materials.
Preferably, the lower end of the first metal bump is connected with the upper surface of the lead frame, the third metal bump is connected with the upper surface of the lead frame through the first lead, the third bare chip is connected with the upper surface of the lead frame through the fourth lead, and the compound layer coats the first lead, the fourth lead and the upper surface of the lead frame.
Preferably, the lower end of the first metal bump extends to the bottom wall of the compound layer and contacts the compound layer.
The invention also discloses a preparation method of the double-sided wire bonding and flip-chip combined stacked chip structure, which is used for preparing the double-sided wire bonding and flip-chip combined stacked chip structure and comprises the following steps:
step 1: manufacturing a silicon through hole on a first bare chip to realize electrical communication between the upper side and the lower side of the first bare chip, manufacturing a second metal lug and a third metal lug at the upper end and the lower end of the silicon through hole respectively, electrically connecting the second metal lug and the third metal lug with the silicon through hole respectively, and then manufacturing a first metal lug on the upper surface of the first bare chip, wherein the first metal lug and the second metal lug are positioned at the same side;
step 2: fixing the first die in the plastic package jig with the side, provided with the first metal bump, facing upwards;
step 3: adding an adhesive material at the joint of the upper surface of the first die and the second die, or adding an adhesive material at the joint of the second die and the first die, and then fixing the second die on the first die;
step 4: electrically connecting the second die with the second metal bump at the through silicon via of the first die by wire bonding;
step 5: the first bare chip is inversely arranged in the plastic packaging jig, and the first metal bump is downwards placed;
step 6: adding adhesive at the joint of the side, far away from the second die, of the first die and the third die, or adding adhesive at the joint of the third die and the first die, and then fixing the third die on the first die;
step 7: electrically connecting the third bare chip with a third metal bump at the through silicon hole of the first bare chip through wire bonding to obtain a stacked chip structure;
step 8: adopting an injection molding process to carry out plastic package on the stacked chip structure to obtain a finished product;
step 9: cutting and separating the finished product after plastic packaging into single chips.
Preferably, the plastic package jig comprises a bottom plate, the bottom plate upper surface front side sets up first electric putter, first electric putter output sets up first baffle, first baffle and bottom plate upper surface sliding connection, first baffle right side sets up the second baffle, first baffle perpendicular to second baffle, second baffle and bottom plate upper surface fixed connection, the second baffle lateral wall sets up the pipe of moulding plastics, second baffle one end and injection molding machine output are kept away from to the pipe of moulding plastics, first baffle and second baffle lateral wall sliding connection, first baffle trailing wall sliding set up the third baffle, the third baffle is on a parallel with the second baffle, second baffle one side is kept away from to the third baffle sets up drive assembly, drive assembly is used for controlling third baffle along first baffle lateral wall side sliding, third baffle is close to second baffle one side sliding set up the fourth baffle, the fourth baffle is on a parallel with first baffle, second baffle rear end and fourth baffle preceding lateral wall sliding connection.
Preferably, the driving assembly includes: the second electric putter, second electric putter bottom surface sets up the slider, and slider and the spout inner wall sliding connection that sets up on the bottom plate, second electric putter output and third baffle lateral wall are connected, and the bottom plate is close to the rear end upper surface and sets up first fixed block, and the interior sliding arrangement of first fixed block is first slide bar, and first slide bar one end is connected with second electric putter lateral wall, and first spring is established to the cover on the first slide bar, and first spring one end and first fixed block lateral wall fixed connection, the first spring other end is connected with second electric putter lateral wall.
Preferably, the bottom plate is further provided with a stabilizing component, the stabilizing component comprises a second fixing block, the second fixing block is located behind the fourth baffle, the second fixing block is connected with the upper surface of the bottom plate, a second sliding rod is arranged in the second fixing block in a sliding mode, one end of the second sliding rod, close to the third baffle, penetrates through the second fixing block and is connected with the sliding plate, the sliding plate is connected with the rear side wall of the fourth baffle, a second spring is sleeved on the second sliding rod, one end of the second spring is connected with the side wall of the sliding plate, and the other end of the second spring is connected with the side wall of the second fixing block.
Preferably, the bottom plate rear end upper surface sets up the riser, the riser upper end sets up the mounting panel, the mounting panel lower surface sets up third electric putter, third electric putter output sets up the apron, the apron lower surface sets up the fixed column, the fixed column lower extreme passes the box and sets up the limiting plate, limiting plate and box inner wall sliding connection, fixed column and box run through position sliding connection, the bottom half sets up the opening, the box periphery sets up the flange, flange and box integrated into one piece design, the cover is established to the fixed column on, third spring one end is connected with the apron lower surface, the third spring other end is connected with the box upper surface.
Preferably, the lower surface of the cover plate is provided with a plurality of limit posts, the limit posts are positioned above the flange, and the lower ends of the limit posts are flush with the upper surface of the limit plate.
The technical scheme of the invention has the following advantages: the invention provides a bonding and flip-chip combined stacked chip structure with double-sided wire bonding and a preparation method, and relates to the technical field of semiconductors. In the invention, the second die and the third die are respectively arranged at two sides of the first die, so that the distance between the dies is shortened, the connecting circuit between the dies is shortened, the connecting resistance is reduced, the signal delay is reduced, the high-frequency characteristic is better, and the electrical performance of the product is improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and other advantages of the invention may be realized and attained by means of the instrumentalities particularly pointed out in the written description and the appended drawings.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a bonding and flip-chip combined stacked chip structure with double-sided routing according to the present invention;
FIG. 2 is a schematic view of a leadframe according to the present invention;
FIG. 3 is a top view of the molding tool of the present invention;
FIG. 4 is a front view of the plastic package jig of the present invention;
fig. 5 is a schematic diagram of an internal structure of the plastic package jig according to the present invention.
In the figure: 1. a first die; 2. a compound layer; 3. a second die; 4. a third die; 5. a first metal bump; 6. a through silicon via; 71. a second metal bump; 72. a third metal bump; 8. a second lead; 9. a third lead; 10. a first adhesive layer; 11. a second adhesive layer; 12. a lead frame; 13. a first lead; 14. a fourth lead; 15. a bottom plate; 16. a first electric push rod; 17. a first baffle; 18. a second baffle; 19. injection molding a tube; 20. a third baffle; 21. a fourth baffle; 22. a second electric push rod; 23. a chute; 24. a first fixed block; 25. a first slide bar; 26. a first spring; 27. a second fixed block; 28. a second slide bar; 29. a sliding plate; 30. a second spring; 31. a riser; 32. a mounting plate; 33. a third electric push rod; 34. a cover plate; 35. fixing the column; 36. a case; 37. a limiting plate; 38. a flange; 39. a third spring; 40. and a limit column.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
In addition, the descriptions of the "first," "second," and the like, herein are for descriptive purposes only and are not intended to be specifically construed as order or sequence, nor are they intended to limit the invention solely for distinguishing between components or operations described in the same technical term, but are not to be construed as indicating or implying any relative importance or order of such features. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, technical solutions and technical features between the embodiments may be combined with each other, but it is necessary to base that a person skilled in the art can implement the combination of technical solutions, when the combination of technical solutions contradicts or cannot be implemented, should be considered that the combination of technical solutions does not exist, and is not within the scope of protection claimed by the present invention.
Example 1
The embodiment of the invention provides a bonding and flip-chip combined stacked chip structure with double-sided routing and a preparation method, as shown in fig. 1, comprising the following steps: : the semiconductor device comprises a first bare chip 1 and a compound layer 2, wherein a second bare chip 3 is arranged on the lower surface of the first bare chip 1, a third bare chip 4 is arranged on the upper surface of the first bare chip 1, a plurality of first metal bumps 5 are arranged on the lower surface of the first bare chip 1, a plurality of through silicon vias 6 are arranged in the first bare chip 1, two ends of each through silicon via 6 penetrate through the upper side and the lower side of the first bare chip 1 respectively, a third metal bump 72 and a second metal bump 71 are arranged at the upper end and the lower end of each through silicon via 6 respectively, the second bare chip 3 is connected with the lower end of the second metal bump 71 through a second lead 8, the third bare chip 4 is connected with the upper end of the third metal bump 72 through a third lead 9, and the compound layer 2 is coated on the peripheries of the first bare chip 1, the second bare chip 3, the third bare chip 4 and the first metal bumps 5;
the second die 3 is connected with the lower surface of the first die 1 through the first bonding layer 10, the third die 4 is connected with the upper surface of the first die 1 through the second bonding layer 11, and the first bonding layer 10 and the second bonding layer 11 are both made of adhesive materials.
The working principle and the beneficial effects of the technical scheme are as follows: the second die 3 is installed on the lower surface of the first die 1 through the first bonding layer 10, the third die 4 is installed on the upper surface of the first die 1 through the second bonding layer 11, the integration level of the chip structure can be improved, the occupied area is reduced, a plurality of through silicon vias 6 are arranged on the first die 1, the electric communication of the front side and the back side of the first die 1 can be achieved through the through silicon vias 6, then a first metal bump 5 is generated on the lower surface of the first die 1 through the bump, a second metal bump 71 and a third metal bump 72 are generated in the through silicon vias 6, the second metal bump 71 and the second die 3 are located on the same side of the first die 1, the second die 3 and the second metal bump 71 are connected through a second lead 8, the third die 4 and the third metal bump 72 are connected through a third lead 9, circuit interconnection between the dies is achieved, a compound layer 2 is arranged on the periphery of the first die 1, the second die 3, the third die 4 and the first metal bump 5, the compound layer 2 is manufactured through the compound layer 2, the first die 3 and the second die 3 can be connected with the third die 4 through the second lead 8, the electric resistance between the first die 4 and the second die 4 is reduced, the electric resistance between the second die 4 is improved, and the first die 4 is better, the electric resistance is reduced, and the first die 4 and the second die is better, the electric resistance is better, and the electric resistance between the die and the die is better than the die 3.
Example 2
In addition to the above embodiment 1, as shown in fig. 2, the lower end of the first metal bump 5 is connected to the upper surface of the lead frame 12, the third metal bump 72 is connected to the upper surface of the lead frame 12 through the first lead 13, and the third die 4 is connected to the upper surface of the lead frame 12 through the fourth lead 14, and the compound layer 2 encapsulates the first lead 13, the fourth lead 14, and the upper surface of the lead frame 12.
The working principle and the beneficial effects of the technical scheme are as follows: the lead frame 12 is arranged at the lower end of the first metal lug 5, the first bare chip 1 is connected with the lead frame 12 through the first lead 13, the third bare chip 4 is connected with the lead frame 12 through the fourth lead 14, meanwhile, the first metal lug 5 is also connected with the lead frame 12, the integration level of a chip structure is improved, the connection resistance is shortened, the signal delay is reduced, the high-frequency characteristic is better, and the electric performance of a product is better.
Example 3
On the basis of example 1, as shown in fig. 1, the lower end of the first metal bump 5 extends to the bottom wall of the compound layer 2 and is in contact with the outside of the compound layer 2.
The working principle and the beneficial effects of the technical scheme are as follows: compared with the embodiment 2, the first metal bump 5 is directly contacted with the outside of the compound layer 2, and the first metal bump 5 is directly electrically connected with an external device, so that compared with the conventional packaging and flip-chip packaging, the structure of the lead frame 12 is removed, the material of the lead frame 12 can be saved, the material utilization rate is improved, and after the lead frame 12 is removed, an electroplating process is not needed in the production process, so that the processing time is shortened, and the preparation efficiency of a chip is improved.
Example 4
On the basis of embodiment 3, the invention also discloses a preparation method of the double-sided wire bonding and flip-chip combined stacked chip structure, which is used for preparing the double-sided wire bonding and flip-chip combined stacked chip structure and comprises the following steps:
step 1: manufacturing a Through Silicon Via (TSV) 6 on a first bare chip 1 to realize electrical communication between the upper side and the lower side of the first bare chip 1, manufacturing a second metal bump 71 and a third metal bump 72 at the upper end and the lower end of the TSV 6 respectively, electrically connecting the second metal bump 71 and the third metal bump 72 with the TSV 6 respectively, and then manufacturing a first metal bump 5 on the upper surface of the first bare chip 1, wherein the first metal bump 5 and the second metal bump 71 are positioned on the same side;
step 2: fixing the first die 1 in the plastic package jig with the side, provided with the first metal bump 5, facing upwards;
step 3: adding adhesive at the connection part of the upper surface of the first die 1 and the second die 3, or adding adhesive at the connection part of the second die 3 and the first die 1, and then fixing the second die 3 on the first die 1;
step 4: electrically connecting the second die 3 with the second metal bump 71 at the through silicon via 6 of the first die 1 by wire bonding;
step 5: the first bare chip 1 is reversely arranged in the plastic packaging jig, and the first metal bump 5 is placed downwards;
step 6: adding adhesive at the connection part of the side of the first die 1 far away from the second die 3 and the third die 4, or adding adhesive at the connection part of the third die 4 and the first die 1, and then fixing the third die 4 on the first die 1;
step 7: the third bare chip 4 is electrically connected with the third metal bump 72 at the through silicon via 6 of the first bare chip 1 through wire bonding, so as to prepare a stacked chip structure;
step 8: adopting an injection molding process to carry out plastic package on the stacked chip structure to obtain a finished product;
step 9: cutting and separating the finished product after plastic packaging into single chips.
The working principle and the beneficial effects of the technical scheme are as follows: when preparing the bonding and flip-chip combined stacked chip structure with double-sided wire bonding, firstly, a first bare chip 1 is obtained, a through silicon hole 6 is manufactured on the first bare chip 1, the electrical communication between the upper side and the lower side of the first bare chip 1 is realized, a second metal bump 71 and a third metal bump 72 are respectively manufactured at the upper end and the lower end of the through silicon hole 6, the second metal bump 71 and the third metal bump 72 are respectively electrically connected with the through silicon hole 6, then a first metal bump 5 is manufactured on the upper surface of the first bare chip 1, the first metal bump 5 and the second metal bump 71 are positioned on the same side, then one side of the first bare chip 1 provided with the first metal bump 5 is upwards fixed in a plastic package jig, then an adhesive is added at the joint of the upper surface of the first bare chip 1 and the second bare chip 3, or an adhesive is added at the joint of the second bare chip 3 and the first bare chip 1, then the second bare chip 3 is fixed on the first bare chip 1, then the second die 3 is electrically connected with the second metal bump 71 at the through-silicon-hole 6 of the first die 1 through wire bonding, then the first die 1 is reversely arranged in a plastic package jig, the first metal bump 5 is arranged downwards, an adhesive material is added at the connection position of one side of the first die 1 far away from the second die 3 and the third die 4, or an adhesive material is added at the connection position of the third die 4 and the first die 1, then the third die 4 is fixed on the first die 1, then the third die 4 is electrically connected with the third metal bump 72 at the through-silicon-hole 6 of the first die 1 through wire bonding, a stacked chip structure is manufactured, the stacked chip structure is subjected to plastic package by adopting an injection molding process, a finished product is manufactured, finally, the finished product after plastic package is cut and separated into single chips, the chip integration degree is higher through the manufacturing method, the connecting circuit among the dies is shortened, the connection resistance is reduced, the signal delay is reduced, the high-frequency characteristic is better, the electrical property of the product is improved, the lead frame 12 is not needed in the preparation process, the material is saved, the electroplating process is not needed after plastic packaging, the preparation process is optimized, the processing time is shortened, and the chip preparation efficiency is greatly improved.
Example 5
On the basis of embodiment 4, as shown in fig. 3-5, the plastic package jig comprises a bottom plate 15, a first electric push rod 16 is arranged on the front side of the upper surface of the bottom plate 15, a first baffle 17 is arranged at the output end of the first electric push rod 16, the first baffle 17 is slidably connected with the upper surface of the bottom plate 15, a second baffle 18 is arranged on the right side of the first baffle 17, the first baffle 17 is perpendicular to the second baffle 18, the second baffle 18 is fixedly connected with the upper surface of the bottom plate 15, an injection molding pipe 19 is arranged on the side wall of the second baffle 18, one end of the injection molding pipe 19 far away from the second baffle 18 is connected with the output end of the injection molding machine, the first baffle 17 is slidably connected with the side wall of the second baffle 18, a third baffle 20 is slidably arranged on the rear side wall of the first baffle 17, the third baffle 20 is parallel to the second baffle 18, a driving component is arranged on one side of the third baffle 20 far away from the second baffle 18, the driving component is used for controlling the third baffle 20 to slide left and right along the side wall of the first baffle 17, a fourth baffle 21 is slidably arranged on one side close to the second baffle 18, the fourth baffle 21 is parallel to the first baffle 17, and the rear end of the second baffle 18 is slidably connected with the front side wall 21.
The working principle and the beneficial effects of the technical scheme are as follows: the plastic package jig can fix the first bare chip 1 on one hand, so that the second bare chip 3 and the third bare chip 4 can be conveniently mounted on the surface of the first bare chip 1, and can be used as an injection mold on the other hand, thus completing the plastic package protection of a chip structure, when the second bare chip 3 or the third bare chip 4 is mounted, the first bare chip 1 is placed on the bottom plate 15, the first bare chip 1 is positioned in a rectangular space formed by the first baffle 17, the second baffle 18, the third baffle 20 and the fourth baffle 21, then the first electric push rod 16 is started, the first electric push rod 16 pushes the first baffle 17 to move, the inner wall of the first baffle 17 is contacted with the first bare chip 1 to push the first bare chip 1 to move towards the fourth baffle 21 until the rear side wall of the first bare chip 1 is contacted with the front side wall of the fourth baffle 21, then the third baffle 20 is driven by the driving component to move towards the direction close to the second baffle 18, the third baffle 20 drives the fourth baffle 21 to slide along the rear end of the second baffle 18 until the left side and the right side of the first bare chip 1 are respectively contacted with the third baffle 20 and the second baffle 18, at this time, the fixing of the first bare chip 1 can be completed, the second baffle 18 is fixedly arranged on the bottom plate 15, guiding can be provided for the sliding of the first baffle 17 and the fourth baffle 21, the injection molding pipe 19 is arranged at one end of the second baffle 18 far away from the first baffle 17, no matter how the space in the injection molding jig changes, the injection molding pipe 19 can be used for injecting molding materials into the injection molding jig, the injection molding position does not need to be adjusted, the space size formed by the first baffle 17, the second baffle 18, the third baffle 20 and the fourth baffle 21 can be adjusted through the first electric push rod 16 and the driving component, so that the size of the first bare chip 1 is adapted, the adaptation capability of the injection molding jig is improved, the application range is improved, and, when the chip structure is in plastic package, the first bare chip 1 is reversely arranged in the plastic package jig, then the injection molding machine is started, and the injection molding machine can inject plastic package materials into the plastic package space through the injection molding pipe 19 to prepare the compound layer 2, so that the chip structure is effectively protected, and the electric performance of a product is guaranteed.
Example 6
On the basis of embodiment 5, as shown in fig. 3, the driving assembly includes: the second electric putter 22, second electric putter 22 bottom surface sets up the slider, slider and the spout 23 inner wall sliding connection that sets up on the bottom plate 15, second electric putter 22 output is connected with third baffle 20 lateral wall, bottom plate 15 is close to the rear end upper surface and sets up first fixed block 24, the interior first slide bar 25 that sets up of first fixed block 24, first slide bar 25 one end is connected with second electric putter 22 lateral wall, the cover is established first spring 26 on the first slide bar 25, first spring 26 one end and first fixed block 24 lateral wall fixed connection, the first spring 26 other end is connected with second electric putter 22 lateral wall.
The working principle and the beneficial effects of the technical scheme are as follows: when the third baffle 20 is controlled to slide, the second electric push rod 22 is started, the second electric push rod 22 stretches out to drive the third baffle 20 to slide along the inner wall of the first baffle 17, and as the second electric push rod 22 is in sliding connection with the sliding groove 23 through the sliding block, the third baffle 20 is ensured not to deviate when being pushed by the first baffle 17, the stability of the third baffle 20 is improved, and when the third baffle 20 moves along with the first baffle 17, the first spring 26 is always in a compressed state, so that the connection between the third baffle 20 and the first baffle 17 is tighter, the problem of leakage in the injection molding process is avoided, and the quality of injection molding packaging is ensured.
Example 7
On the basis of embodiment 5 or 6, as shown in fig. 3, a stabilizing component is further disposed on the bottom plate 15, the stabilizing component includes a second fixing block 27, the second fixing block 27 is located behind the fourth baffle 21, the second fixing block 27 is connected with the upper surface of the bottom plate 15, a second sliding rod 28 is slidably disposed in the second fixing block 27, one end of the second sliding rod 28, which is close to the third baffle 20, passes through the second fixing block 27 and is connected with a sliding plate 29, the sliding plate 29 is connected with the rear side wall of the fourth baffle 21, a second spring 30 is sleeved on the second sliding rod 28, one end of the second spring 30 is connected with the side wall of the sliding plate 29, and the other end of the second spring 30 is connected with the side wall of the second fixing block 27.
The working principle and the beneficial effects of the technical scheme are as follows: when the third baffle 20 pushes the fourth baffle 21, the fourth baffle 21 drives the second sliding rod 28 to slide in the second fixed block 27 through the sliding plate 29, the second spring 30 is compressed, the second sliding rod 28 can provide a guide for the sliding of the fourth baffle 21 to prevent the fourth baffle 21 from deviating and reduce the sealing effect, and under the elastic force of the second spring 30, the fourth baffle 21 is always abutted against the side wall of the third baffle 20, so that the sealing performance between the third baffle 20 and the fourth baffle 21 is further improved, and the compound layer 2 is prepared by injecting plastic package materials from the injection molding pipe 19 into the plastic package space.
Example 8
On the basis of any one of the embodiments 5 to 7, as shown in fig. 3 to 5, a riser 31 is arranged on the upper surface of the rear end of the bottom plate 15, a mounting plate 32 is arranged on the upper end of the riser 31, a third electric push rod 33 is arranged on the lower surface of the mounting plate 32, a cover plate 34 is arranged at the output end of the third electric push rod 33, a fixed column 35 is arranged on the lower surface of the cover plate 34, the lower end of the fixed column 35 penetrates through a box 36 and is provided with a limiting plate 37, the limiting plate 37 is in sliding connection with the inner wall of the box 36, the fixed column 35 is in sliding connection with the penetrating position of the box 36, an opening is arranged at the bottom of the box 36, a flange 38 is arranged on the periphery of the box 36, the flange 38 and the box 36 are integrally formed, a third spring 39 is sleeved on the fixed column 35, one end of the third spring 39 is connected with the lower surface of the cover plate 34, and the other end of the third spring 39 is connected with the upper surface of the box 36.
The working principle and the beneficial effects of the technical scheme are as follows: the first electric push rod 16, the second electric push rod 22 and the third electric push rod 33 are respectively and electrically connected with a controller arranged on the bottom plate 15, the controller can control the first electric push rod 16, the second electric push rod 22 and the third electric push rod 33 to stretch and retract, when the first bare chip 1 with the second bare chip 3 and the third bare chip 4 is inverted to a plastic package jig, the first baffle 17, the second baffle 18, the third baffle 20 and the fourth baffle 21 are not contacted with the first bare chip 1, at the moment, the third electric push rod 33 is started, the third electric push rod 33 moves downwards to drive the cover plate 34 to cover the upper surface of the plastic package jig, the sealing of the upper surface of the plastic package jig is realized, the fixing column 35 on the lower surface of the cover plate 34 drives the box 36 to move downwards through the third spring 39, the box 36 is covered outside the second bare chip 3, the flange 38 of the box 36 is abutted with the upper surface of the first bare chip 1, then the first electric push rod 16 and the second electric push rod 22 are started, the first baffle 17, the second baffle 18, the third baffle 20 and the fourth baffle 21 are connected with the periphery of the flange 38 in a sliding manner, the inner space of the plastic package jig is divided through the side walls of the flange 38 and the box 36, when plastic package material is injected from the injection molding pipe 19, the plastic package material enters the plastic package jig, the space below the first bare chip 1 is filled firstly, after all the space is filled, the flange 38 and the box 36 slide upwards along the fixed column 35 under the pressure of the plastic package material, then the space above the first bare chip 1 is filled and packaged, finally all the plastic packages are completed, the compound layer 2 is manufactured at the peripheries of the first bare chip 1, the second bare chip 3 and the third bare chip 4, the box 36 and the flange 38 can be pressed on the upper surface of the first bare chip 1 under the action of the third spring 39 in the plastic package material injection process, the position of the first bare chip 1 is prevented from shifting in the plastic package process, the plastic packaging effect is ensured, and the product quality is improved.
Example 9
On the basis of embodiment 8, as shown in fig. 5, a plurality of limiting posts 40 are arranged on the lower surface of the cover plate 34, the limiting posts 40 are located above the flange 38, and the lower ends of the limiting posts 40 are flush with the upper surface of the limiting plate 37.
The working principle and the beneficial effects of the technical scheme are as follows: when the box 36 slides upwards under the pushing of the plastic package material, the flange 38 gradually contacts with the limit post 40, so that the box 36 stops sliding upwards, at this time, the lower surface of the flange 38 and the lower surface of the limit plate 37 are on the same plane, the flatness of the upper surface of the compound layer 2 can be ensured, the subsequent processing or repairing is reduced, the flange 38 can squeeze the plastic package material under the elastic force of the third spring 39, thereby avoiding the generation of bubbles of the melted plastic package material in the plastic package space, improving the plastic package effect and the electrical property of the product.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (7)
1. The preparation method of the bonding and flip-chip combined stacked chip structure of the double-sided routing is characterized by comprising the following steps of:
step 1: manufacturing a silicon through hole (6) on a first bare chip (1) to realize electrical communication between the upper side and the lower side of the first bare chip (1), manufacturing a second metal lug (71) and a third metal lug (72) at the upper end and the lower end of the silicon through hole (6) respectively, electrically connecting the second metal lug (71) and the third metal lug (72) with the silicon through hole (6) respectively, and then manufacturing a first metal lug (5) on the upper surface of the first bare chip (1), wherein the first metal lug (5) and the second metal lug (71) are positioned on the same side;
step 2: fixing one side of a first bare chip (1) provided with a first metal bump (5) in a plastic package jig upwards;
step 3: adding an adhesive material at the joint of the upper surface of the first bare chip (1) and the second bare chip (3), or adding an adhesive material at the joint of the second bare chip (3) and the first bare chip (1), and then fixing the second bare chip (3) on the first bare chip (1);
step 4: electrically connecting the second bare chip (3) with a second metal bump (71) at the through silicon via (6) of the first bare chip (1) through wire bonding;
step 5: the first bare chip (1) is inversely arranged in the plastic packaging jig, and the first metal bump (5) is placed downwards;
step 6: adding an adhesive material at the joint of one side of the first bare chip (1) far away from the second bare chip (3) and the third bare chip (4), or adding an adhesive material at the joint of the third bare chip (4) and the first bare chip (1), and then fixing the third bare chip (4) on the first bare chip (1);
step 7: electrically connecting the third bare chip (4) with a third metal bump (72) at the through silicon via (6) of the first bare chip (1) through wire bonding to prepare a stacked chip structure;
step 8: adopting an injection molding process to carry out plastic package on the stacked chip structure to obtain a finished product;
step 9: cutting and separating the finished product after plastic packaging into single chips;
the plastic packaging jig comprises a bottom plate (15), a first electric push rod (16) is arranged on the front side of the upper surface of the bottom plate (15), a first baffle (17) is arranged at the output end of the first electric push rod (16), the first baffle (17) is slidably connected with the upper surface of the bottom plate (15), a second baffle (18) is arranged on the right side of the first baffle (17), the first baffle (17) is perpendicular to the second baffle (18), the second baffle (18) is fixedly connected with the upper surface of the bottom plate (15), an injection molding pipe (19) is arranged on the side wall of the second baffle (18), one end of the injection molding pipe (19) far away from the second baffle (18) is connected with the output end of the injection molding machine, the first baffle (17) is slidably connected with the side wall of the second baffle (18), a third baffle (20) is slidably arranged on the rear side wall of the first baffle (17), the third baffle (20) is parallel to the second baffle (18), a driving component is arranged on one side of the third baffle (20) far away from the second baffle (18), the driving component is used for controlling the third baffle (20) to slide left and right along the side wall of the first baffle (17), the third baffle (20) is close to the second baffle (18), the fourth baffle (21) is arranged on the side of the third baffle (20) and is parallel to the fourth baffle (21);
the drive assembly includes: the second electric push rod (22), the bottom surface of the second electric push rod (22) is provided with a sliding block, the sliding block is in sliding connection with the inner wall of a sliding groove (23) formed in the bottom plate (15), the output end of the second electric push rod (22) is connected with the side wall of the third baffle plate (20), the bottom plate (15) is close to the upper surface of the rear end and is provided with a first fixed block (24), a first sliding rod (25) is arranged in the sliding mode of the first fixed block (24), one end of the first sliding rod (25) is connected with the side wall of the second electric push rod (22), a first spring (26) is sleeved on the first sliding rod (25), one end of the first spring (26) is fixedly connected with the side wall of the first fixed block (24), and the other end of the first spring (26) is connected with the side wall of the second electric push rod (22);
the bonding and flip-chip combined stacked chip structure of the double-sided routing manufactured by the manufacturing method comprises the following steps: the semiconductor device comprises a first bare chip (1) and a compound layer (2), wherein a second bare chip (3) is arranged on the lower surface of the first bare chip (1), a third bare chip (4) is arranged on the upper surface of the first bare chip (1), a plurality of first metal bumps (5) are arranged on the lower surface of the first bare chip (1), a plurality of through silicon vias (6) are arranged in the first bare chip (1), two ends of the through silicon vias (6) penetrate through the upper side and the lower side of the first bare chip (1) respectively, a third metal bump (72) and a second metal bump (71) are arranged at the upper end and the lower end of the through silicon vias (6), the second bare chip (3) is connected with the lower end of the second metal bump (71) through a second lead (8), the third bare chip (4) is connected with the upper end of the third metal bump (72), and the compound layer (2) is coated on the peripheries of the first bare chip (1), the second bare chip (3), the third bare chip (4) and the first metal bump (5).
2. The method for manufacturing the double-sided wire bonding and flip-chip combined stacked chip structure according to claim 1, wherein the second die (3) is connected with the lower surface of the first die (1) through the first adhesive layer (10), the third die (4) is connected with the upper surface of the first die (1) through the second adhesive layer (11), and the first adhesive layer (10) and the second adhesive layer (11) are both made of adhesive materials.
3. The method for manufacturing the double-sided wire bonding and flip-chip combined stacked chip structure according to claim 1, wherein the lower end of the first metal bump (5) is connected with the upper surface of the lead frame (12), the third metal bump (72) is connected with the upper surface of the lead frame (12) through the first lead (13), the third bare chip (4) is connected with the upper surface of the lead frame (12) through the fourth lead (14), and the compound layer (2) covers the first lead (13), the fourth lead (14) and the upper surface of the lead frame (12).
4. The method for manufacturing the double-sided wire bonding and flip-chip combined stacked chip structure according to claim 1, wherein the lower end of the first metal bump (5) extends to the bottom wall of the compound layer (2) and is in contact with the outside of the compound layer (2).
5. The method for manufacturing the double-sided wire bonding and flip-chip combined stacked chip structure according to claim 1, wherein a stabilizing component is further arranged on the bottom plate (15), the stabilizing component comprises a second fixing block (27), the second fixing block (27) is located behind the fourth baffle plate (21), the second fixing block (27) is connected with the upper surface of the bottom plate (15), a second sliding rod (28) is arranged in the second fixing block (27) in a sliding mode, one end, close to the third baffle plate (20), of the second sliding rod (28) penetrates through the second fixing block (27) and is connected with the sliding plate (29), the sliding plate (29) is connected with the rear side wall of the fourth baffle plate (21), a second spring (30) is sleeved on the second sliding rod (28), one end of the second spring (30) is connected with the side wall of the sliding plate (29), and the other end of the second spring (30) is connected with the side wall of the second fixing block (27).
6. The manufacturing method of the double-sided wire bonding and flip-chip combined stacked chip structure according to claim 1, wherein a vertical plate (31) is arranged on the upper surface of the rear end of a bottom plate (15), a mounting plate (32) is arranged at the upper end of the vertical plate (31), a third electric push rod (33) is arranged on the lower surface of the mounting plate (32), a cover plate (34) is arranged at the output end of the third electric push rod (33), a fixed column (35) is arranged on the lower surface of the cover plate (34), the lower end of the fixed column (35) penetrates through a box body (36) and is provided with a limiting plate (37), the limiting plate (37) is in sliding connection with the inner wall of the box body (36), the fixed column (35) is in sliding connection with the penetrating position of the box body (36), an opening is arranged at the bottom of the box body (36), a flange (38) is arranged on the periphery of the box body (36), the flange (38) and the box body (36) is integrally formed, a third spring (39) is sleeved on the fixed column (35), one end of the third spring (39) is connected with the lower surface of the cover plate (34), and the other end of the third spring (39) is connected with the upper surface of the box body (36).
7. The method for manufacturing the double-sided wire bonding and flip-chip combined stacked chip structure according to claim 6, wherein a plurality of limit posts (40) are arranged on the lower surface of the cover plate (34), the limit posts (40) are located above the flange (38), and the lower ends of the limit posts (40) are flush with the upper surface of the limit plate (37).
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| CN103296008A (en) * | 2012-02-22 | 2013-09-11 | 中国科学院微电子研究所 | TSV or TGV adapter plate, 3D package and preparation method thereof |
| CN210200690U (en) * | 2019-07-04 | 2020-03-27 | 成都汉芯国科集成技术有限公司 | Chip is moulded plastics and is used anchor clamps |
| CN113725173A (en) * | 2021-08-12 | 2021-11-30 | 日月光半导体制造股份有限公司 | Semiconductor package device and method of manufacturing the same |
| CN114388490A (en) * | 2022-01-14 | 2022-04-22 | 绍兴中芯集成电路制造股份有限公司 | Packaging structure of intelligent power module and packaging method thereof |
| CN218385219U (en) * | 2022-08-08 | 2023-01-24 | 日月光半导体制造股份有限公司 | Semiconductor device with a plurality of transistors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG119234A1 (en) * | 2004-07-29 | 2006-02-28 | Micron Technology Inc | Assemblies including stacked semiconductor dice having centrally located wire bonded bond pads |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296008A (en) * | 2012-02-22 | 2013-09-11 | 中国科学院微电子研究所 | TSV or TGV adapter plate, 3D package and preparation method thereof |
| CN210200690U (en) * | 2019-07-04 | 2020-03-27 | 成都汉芯国科集成技术有限公司 | Chip is moulded plastics and is used anchor clamps |
| CN113725173A (en) * | 2021-08-12 | 2021-11-30 | 日月光半导体制造股份有限公司 | Semiconductor package device and method of manufacturing the same |
| CN114388490A (en) * | 2022-01-14 | 2022-04-22 | 绍兴中芯集成电路制造股份有限公司 | Packaging structure of intelligent power module and packaging method thereof |
| CN218385219U (en) * | 2022-08-08 | 2023-01-24 | 日月光半导体制造股份有限公司 | Semiconductor device with a plurality of transistors |
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