CN116403943A - A heating plate and its manufacturing method, a semiconductor device - Google Patents

Abstract

The application provides a heating plate and a manufacturing method thereof, a semiconductor device, the heating plate includes: the temperature adjusting layer comprises a plurality of temperature adjusting areas, the area difference between the temperature adjusting areas is smaller than a target threshold value, namely the areas between the temperature adjusting areas are basically equal, at least one metal loop is arranged in the temperature adjusting areas, the temperature of the temperature adjusting areas is adjusted by the aid of the metal loop, the temperature difference between different temperature adjusting areas of the heating plate is reduced, the temperature between the temperature adjusting areas is the same, namely the temperature of the temperature adjusting areas is finely adjusted by the aid of the metal loop corresponding to one temperature adjusting area, balance of the temperature between the temperature adjusting areas is achieved, and therefore the temperature uniformity of the heating plate is improved.

Description

A heating plate and its manufacturing method, a semiconductor device

technical field

The invention relates to the field of semiconductors, in particular to a heating plate, a manufacturing method thereof, and a semiconductor device.

Background technique

With the development of semiconductor-related technologies, the manufacturing process of semiconductor devices and chips is also developing rapidly.

In the manufacturing process of semiconductor devices, a heating plate is usually used. Place the device to be manufactured on the heating plate, and use the heating plate to uniformly heat the device to be manufactured to meet the temperature requirements in the process of manufacturing semiconductor devices.

However, the current heating plate has a large temperature difference between different regions, and the heating plate has a phenomenon of uneven temperature.

Contents of the invention

In view of this, the object of the present application is to provide a heating plate and its manufacturing method, and a semiconductor device, which can reduce the temperature difference between different regions of the heating plate and improve the temperature uniformity of the heating plate.

An embodiment of the present application provides a heating plate, the heating plate includes: a temperature adjustment layer; the temperature adjustment layer includes a plurality of temperature adjustment regions, and the area difference between the plurality of temperature adjustment regions is smaller than a target threshold;

The temperature adjustment area is provided with at least one metal circuit, and the temperature of the temperature adjustment area is adjusted by using the metal circuit, so that the temperature among the plurality of temperature adjustment areas included in the temperature adjustment layer is the same.

Optionally, the temperature regulation layer includes a plurality of concentric ring regions, each of which includes at least one temperature regulation region.

Optionally, the material of the temperature regulation layer is aluminum nitride, and the material of the metal circuit is tungsten or platinum.

Optionally, a resistance temperature detector is also included, the resistance temperature detector is connected to the metal loop;

The resistance temperature detector is used to obtain the impedance of the metal loop, so as to determine the actual temperature change value of the temperature adjustment area according to the impedance of the metal loop.

Optionally, a ground electrode layer is further included, the ground electrode layer includes a return electrode, and the return electrode is connected to the metal loop.

Optionally, the heating plate includes a heating side where the object to be heated is placed, and the heating plate further includes a temperature raising layer, and the temperature raising layer is disposed on a side of the temperature regulating layer away from the heating side.

Optionally, the temperature raising layer includes a heating circuit, and the temperature raising layer and the temperature regulating layer are integrally structured, and the integrated structure is to print a heating circuit and a metal circuit on a laminated structure formed of an aluminum nitride material respectively and then It is formed by stacking and sintering the laminated structure.

Optionally, a heat insulation layer is also included, and the heat insulation layer is arranged on a side of the heating layer away from the heating side.

Optionally, the material of the thermal insulation layer includes opaque quartz or aluminum oxide.

Optionally, a ceramic layer is further included, and the ceramic layer is disposed on a side of the heat insulation layer away from the heating side.

Optionally, the material of the ceramic layer includes alumina.

Optionally, the heat insulation layer and the ceramic layer include connecting wires, and the connecting wires are used to connect the metal circuit and a power supply;

The connecting wire includes a first metal wire, a second metal wire and a terminal connected in sequence, the first metal wire is arranged on the heat insulation layer, and the second metal wire is arranged on the heat insulation layer and the heat insulation layer. The interface of the ceramic layer, the terminal is arranged on the ceramic layer.

Optionally, the terminals are formed by a soldering or brazing process, and the second metal lines are formed by a printing process.

Optionally, a side wall heat insulating layer is also included, and the side wall heat insulating layer is arranged on the side walls of the temperature regulating layer, the temperature raising layer and the ceramic layer.

Optionally, the side wall of the side wall heat insulation layer is provided with an anti-corrosion coating.

Optionally, the material of the anti-corrosion coating is aluminum oxide formed by aluminum spraying process.

Optionally, a purge pipeline is also included, and the purge pipeline is arranged inside the heating plate for purging the interface between different layers.

Optionally, a pipeline structure is also included, the pipeline structure is covered by Teflon, and the pipeline structure is used to set at least a temperature regulation circuit, and the temperature regulation circuit is connected to the metal loop.

Optionally, a cooling plate is also included, the cooling plate is arranged on the side of the ceramic layer away from the heating side;

A cooling pipeline is arranged in the cooling plate, and cooling water is arranged in the cooling pipeline.

Optionally, the target threshold includes a target ratio, and the target ratio is less than or equal to 5%.

Optionally, the number of the temperature regulation areas is greater than 20.

An embodiment of the present application provides a method for manufacturing a heating plate, the method comprising:

pressing a target slurry to form a plurality of thin layer structures, the target slurry including at least aluminum nitride;

Printing lines on each thin layer structure;

stacking and firing the multiple thin-layer structures, the multiple thin-layer structures include multi-layer stacked circuits;

Drilling holes in the plurality of thin-layer structures and filling the holes with metal materials, using the metal materials to connect the multilayer stacked circuits.

An embodiment of the present application provides a semiconductor device, and the semiconductor device includes the heating plate described in the above embodiment.

An embodiment of the present application provides a heating plate, the heating plate includes: a temperature regulation layer, the temperature regulation layer includes a plurality of temperature regulation areas, the area difference between the plurality of temperature regulation regions is less than the target threshold, that is, a plurality of temperature regulation regions The areas between the areas are basically equal, and at least one metal circuit is provided in the temperature adjustment area, and the temperature of the temperature adjustment area is adjusted by using the metal circuit, so as to reduce the temperature difference between different temperature adjustment areas of the heating plate, so that the temperature difference between multiple temperature adjustment areas The temperature is the same, that is, the metal circuit corresponding to a certain temperature adjustment area is used to fine-tune the temperature of the temperature adjustment area to achieve temperature balance between different temperature adjustment areas, thereby improving the temperature uniformity of the heating plate.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application. For Those of ordinary skill in the art can also obtain other drawings based on these drawings without making creative efforts.

FIG. 1 shows a schematic top view of a heating plate provided in an embodiment of the present application;

Figure 2 shows a schematic top view of another heating plate provided in the embodiment of the present application;

Fig. 3 shows a schematic cross-sectional structure diagram of a heating plate provided by an embodiment of the present application;

Fig. 4 shows a schematic flowchart of a method for manufacturing a heating plate provided in an embodiment of the present application.

Detailed ways

In order to enable those skilled in the art to better understand the solution of the application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do it without violating the content of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

The present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection of the present application. range. In addition, the three-dimensional space dimensions of length, width and depth should be included in actual production.

With the development of semiconductor-related technologies, the manufacturing process of semiconductor devices and chips is also developing rapidly.

In the manufacturing process of semiconductor devices, a heating plate is usually used, and the device to be manufactured is placed on the heating plate, and the device to be manufactured is uniformly heated by the heating plate, so as to improve the performance of the device to be manufactured.

When the front heating plate is heating, the temperature control is 2-zone control and the temperature difference between different areas is about 3°C. There is a phenomenon that the temperature difference between different areas is large and the temperature of the heating plate is uneven. However, the temperature uniformity of the current heating plate is very important to the process of manufacturing semiconductor devices. Therefore, there is an urgent need for a heating plate with higher temperature uniformity.

Based on this, an embodiment of the present application provides a heating plate, the heating plate includes: a temperature regulation layer, the temperature regulation layer includes a plurality of temperature regulation regions, and the area difference between the plurality of temperature regulation regions is smaller than the target threshold value, that is, more The areas between the temperature adjustment areas are basically equal, and the temperature adjustment area is provided with at least one metal circuit, and the temperature of the temperature adjustment area is adjusted by using the metal circuit, so as to reduce the temperature difference between different temperature adjustment areas of the heating plate, so that multiple temperature adjustment areas The temperature between them is the same, that is, the metal circuit corresponding to a certain temperature adjustment area is used to fine-tune the temperature of the temperature adjustment area, so as to realize the temperature balance between different temperature adjustment areas, and then improve the temperature uniformity of the heating plate.

In order to better understand the technical solutions and technical effects of the present application, specific embodiments will be described in detail below in conjunction with the accompanying drawings.

Referring to FIG. 1 , this figure is a schematic structural diagram of a heating plate provided in an embodiment of the present application.

The heating plate provided in the embodiment of the present application can be applied in the manufacturing process of semiconductor devices, and the heating plate can be used for uniform heating.

The heating plate provided in this embodiment includes: a temperature regulating layer 100 .

In the embodiment of the present application, the temperature regulation layer 100 includes a plurality of temperature regulation regions 110 , and the area difference between the plurality of temperature regulation regions 110 is smaller than a target threshold. The target threshold may be an actual area difference, or a proportional relationship, for example, a target ratio of the area difference between multiple temperature adjustment areas. The target ratio can be 5%. That is to say, the areas between the multiple temperature regulation regions 110 are substantially equal, that is, the temperature regulation layer 100 is divided into a plurality of temperature regulation regions 110 with substantially equal areas, so that a certain temperature regulation region with a large temperature difference can be adjusted subsequently. The temperature zone 110 is individually temperature-regulated.

In the embodiment of the present application, each temperature adjustment area 110 is provided with at least one metal loop 111 . Specifically, the metal circuit 111 can be arranged in the temperature adjustment layer 100, so that the temperature adjustment of the corresponding temperature adjustment area 110 in the temperature adjustment layer 100 can be performed by using the metal circuit 111, and the temperature difference between different temperature adjustment areas 110 of the heating plate can be reduced. In order to have the same temperature between multiple temperature regulation areas 110, that is, to use the metal circuit 111 corresponding to a certain temperature regulation area 110 to fine-tune the temperature of the temperature regulation area to achieve temperature balance between different temperature regulation areas, thereby improving Temperature uniformity of the heating plate.

As a possible implementation manner, the temperature adjustment of a certain temperature adjustment area 110 can be realized by adjusting the current flowing through the metal circuit 111 .

For example, increasing the current of the metal circuit 111 increases the heat of the metal circuit 111 , and the temperature of the temperature regulation area 110 corresponding to the metal circuit 111 increases.

In practical applications, the heating plate is mostly circular, and accordingly, the temperature regulating layer 100 is also circular. In the embodiment of the present application, the temperature regulation layer 100 can be divided into a plurality of concentric ring regions, and each concentric ring region includes at least one temperature regulation region 110, that is to say, each temperature regulation region 110 can be Part of a concentric ring region.

Referring to FIG. 1 , the temperature adjustment layer 100 is divided into a central circular area and four concentric annular areas, and each concentric annular area is divided into a plurality of temperature adjustment areas 110 .

In practical applications, the number of temperature regulation regions 110 included in the temperature regulation layer 100 can be determined according to the fineness of temperature regulation and the area of the temperature regulation layer 100 . Specifically, the number of temperature regulation areas 110 may be greater than 20 at least. The greater the number of temperature regulation regions 110, the smaller the area of each temperature regulation region 110 is under the same temperature regulation layer 100 area, and the finer the temperature regulation fineness is, and the temperature of each region of the temperature regulation layer 100 can be finer. Adjustment, which further increases the temperature uniformity of the heating plate.

As shown in FIG. 2 , the temperature regulation layer 100 includes 81 temperature regulation regions 110 , and each temperature regulation region 110 can be individually adjusted in temperature.

In the embodiment of the present application, the material of the temperature regulating layer 100 may be aluminum nitride (AlN), and the material of the metal circuit 111 may be tungsten (W) or platinum (Pt).

In the embodiment of the present application, each temperature adjustment area 110 is provided with a metal circuit 111, and the metal circuit 111 includes a multilayer circuit, wherein the multilayer circuit can be stacked, that is to say, the multilayer circuit is stacked. Connected up and down to form an entire metal circuit 111 for temperature regulation of the temperature regulation area 110 .

In the actual process, the target paste including aluminum nitride material can be pressed to form a thin-layer structure, and a circuit is printed on each thin-layer structure, and multiple thin-layer structures are stacked and fired. Layer lines are also stacked, and multi-layer connectivity can be achieved by punching holes and filling metal materials.

In the embodiment of the present application, the heating plate may further include a resistance temperature detector (Resistance Temperature Detector, RTD), and the resistance temperature detector may be connected to the metal circuit 111 . Each temperature adjustment area 110 can be connected with a resistance temperature detector so as to detect the temperature of each temperature adjustment area 110 .

Specifically, by adjusting the current flowing through the metal circuit 111, the temperature adjustment of the temperature regulation area 110 can be realized. At this time, the voltage of the metal circuit 111 is obtained, combined with the current flowing through the metal circuit 111, the metal circuit 111 can be known. The impedance of the metal circuit 111 can then be used to obtain the actual temperature change value of the temperature adjustment area 110 . Therefore, after the temperature of the temperature adjustment area 110 is adjusted, the resistance temperature detector can obtain the impedance of the metal circuit 111 so as to determine the actual temperature change value of the temperature adjustment area 110 according to the impedance of the metal circuit 111 . That is to say, the corresponding relationship between the impedance of the metal circuit 111 and the actual temperature change value of the temperature adjustment area 110 can be established, so that after the resistance temperature detector obtains the impedance of the metal circuit 111, it can directly use the corresponding relationship to obtain the adjusted temperature. In this way, the temperature control and temperature detection of the temperature adjustment area 110 can be realized, which further provides a strong guarantee for improving the temperature uniformity of the heating plate.

In the embodiment of the present application, the heating plate may include a heating side where the object to be heated is placed, and the heating plate further includes a temperature raising layer 120 disposed on a side of the temperature regulating layer 100 away from the heating side. That is to say, the temperature raising layer 120 is disposed under the temperature regulating layer 100 , as shown in FIG. 3 . The material of the heating layer 120 is aluminum nitride. The temperature raising layer 120 is used to raise the whole heating plate to a specific temperature, and then continue to use the temperature regulating layer 100 to regulate the temperature of a certain temperature regulating area 110 .

The heating layer 120 may also include a heating loop 121, and the material of the heating loop 121 may be a metal material, such as tungsten or platinum. The heating circuit 121 is arranged in a plurality of concentric rings, so that when the plurality of temperature regulation regions 110 in the temperature regulation layer 100 are also arranged in the shape of concentric rings, it will be more convenient for temperature regulation, and the uneven temperature in the heating layer 120 can be corrected. area to be supplemented. That is to say, the temperature-raising layer 120 and the temperature-regulating layer 100 overlap in a direction perpendicular to the surface of the heating plate, and each region in the temperature-raising layer 120 has a temperature-regulating region 110 in the temperature-regulating layer 100 for one-to-one correspondence, so when When the temperature of a certain area of the heating layer 120 is different from that of other areas, the temperature can be adjusted by using the temperature adjustment area 110 corresponding to this area, so that for the entire heating plate, the temperature of different areas is uniform.

In the embodiment of the present application, the heating circuit 121 is arranged in a plurality of concentric rings, and the plurality of temperature adjustment regions 110 are also arranged in a concentric ring, and the concentric rings formed by the heating circuit 121 can be formed with a plurality of temperature adjustment regions 110 The concentric rings correspond to each other, so that the heating circuit 121 in each ring has a temperature adjustment area 110 also in the ring for temperature adjustment, so as to improve the temperature uniformity of the final heating plate. In addition, on the basis of the temperature raising layer 120, a plurality of temperature adjustment regions 110 are also arranged in the shape of concentric rings, which can reduce the difficulty of manufacturing the heating plate, and realize the maximum realization of the heating plate on the basis of a lower heating plate modification cost. uniform temperature.

In the embodiment of the present application, the temperature raising layer 120 and the temperature regulating layer 100 may be of an integrated structure, specifically, a laminated structure may be formed by using a target paste including aluminum nitride material, and the layers of the heating circuit 121 may be printed on the laminated structure. The circuit and the circuit of the metal circuit 111 are then stacked and sintered to form an integrated structure. In this way, the temperature raising layer 120 and the temperature regulating layer 100 can be formed in one manufacturing process, shortening the process progress of manufacturing the heating plate.

In the embodiment of the present application, the heating plate further includes a ground electrode layer 101, and the ground electrode layer 101 is disposed on a side of the temperature adjustment layer 100 close to the heating side. That is to say, the ground electrode layer 101 is disposed above the temperature regulation layer 110 , as shown in FIG. 3 . The ground electrode layer 101 is used to connect with the metal circuit 111 and the heating circuit provided in the heating layer 120 to provide a ground signal.

Specifically, the ground electrode layer 101 includes a return electrode, and the return electrode is connected to the metal loop 111 so that the metal loop 111 forms a circuit loop. Correspondingly, the heating loop 121 in the temperature raising layer 120 also has a corresponding return electrode, and the return electrode is connected to the heating loop 121 so that the heating loop 121 also forms a circuit loop.

In the embodiment of the present application, the heating plate further includes a heat insulating layer 130, and the heat insulating layer 130 is disposed on a side of the heating layer 120 away from the heating side. That is to say, the heat insulation layer 130 is disposed under the heating layer 120 , as shown in FIG. 3 . Specifically, the material of the thermal insulation layer 130 may be opaque quartz (opaque quartz) or alumina material.

Connection wires for connecting the power supply and the metal circuit 111 may also be provided in the heat insulation layer 130 . The connection wire may include a first metal wire (contact pin) 102 and a contact plug (contact plug) 103 , wherein the first metal wire 102 may be formed using a metal material.

In the embodiment of the present application, the heating plate further includes a ceramic layer 140, and the ceramic layer 140 is arranged on the side of the heat insulation layer 130 away from the heating side, that is to say, the ceramic layer 140 is arranged under the heat insulation layer 130, referring to FIG. 3 shown.

Specifically, the material of the ceramic layer 140 may be aluminum oxide.

The ceramic layer 140 may also be provided with connecting wires connecting the power supply and the metal circuit 111 and the power supply and the heating circuit 121 . The connection line connecting the power supply and the metal circuit 111 will be introduced below, and the connection line may also include a second metal line 104 and a terminal 105, wherein the second metal line 104 is arranged at the interface between the heat insulating layer 130 and the ceramic layer 140 , the terminal 105 is disposed on the ceramic layer 140 , and the terminal 105 penetrates the ceramic layer 140 . The material of the second metal line 104 may be aluminum, and it is formed by a printing process. Terminals 105 may be formed using a soldering or brazing process. The terminal 105 is disposed in the central area of the ceramic layer 140 , and is connected to the second metal wire 104 disposed on the upper surface of the ceramic layer 140 . The second metal line 104 is connected to the first metal line 102 .

In practical applications, it is necessary to use soldering or brazing process to form the terminal 105 in the connection line, so as to realize the connection between the metal circuit 111 and the power supply. Due to the material of the heat insulating layer 130, it is impossible to use the soldering or brazing process to form the terminal. 105, therefore, a ceramic layer 140 is provided, and the material of the ceramic layer 140 can realize the formation of the terminal 105 by using a brazing process.

In the embodiment of the present application, the heating plate also includes a cooling plate 150, and the cooling plate 150 is arranged on the side of the ceramic layer 140 away from the heating side, that is to say, the cooling plate 150 is arranged under the ceramic layer 140, as shown in FIG. . Specifically, the material of the cooling plate 150 may be aluminum or stainless steel. A cooling pipeline 151 may be provided in the cooling plate 150 , and cooling water may flow into the cooling pipeline 151 to realize heat dissipation to the heating plate.

In the embodiment of the present application, the heating plate can also include a side wall heat insulating layer 131, and the side wall heat insulating layer 131 is arranged on the side walls of the temperature regulating layer 100, the temperature raising layer 120 and the ceramic layer 140, and is used for protecting the heat of other layers. The side walls are protected. The side wall insulation layer 131 is disposed above the cooling plate 150 , as shown in FIG. 3 . The sidewall of the sidewall insulation layer 131 is provided with an anti-corrosion coating so as to avoid being corroded.

Specifically, the material of the sidewall insulation layer 131 may be opaque quartz (opaque quartz) or foamed aluminum material. The material of the anti-corrosion coating may be aluminum oxide (Al ₂ O ₃ ) formed by an aluminum spraying process, which is used to prevent corrosion by fluorine ions.

In the embodiment of the present application, the heating plate further includes a purge pipeline 160 , as shown in FIG. 3 . The purge pipeline 160 can be arranged inside the heating plate. Specifically, the purge pipeline 160 can run through the cooling plate 150, the ceramic layer 140 and the heat insulation layer 130, and is used to clean the gap between the cooling plate 150, the ceramic layer 140 and the heat insulation layer 130. The interface is purged.

The gas fed into the purge line 160 may be inert gas or nitrogen. Using nitrogen to purge the interface can remove the fluorine ions intruding into the gap of the heating plate and prevent the fluorine ions from corroding the heating plate. The nitrogen gas in the interface flows out through the gap in the heating plate and is exhausted through the process chamber for manufacturing semiconductor devices.

In the embodiment of the present application, the heating plate further includes a pipeline structure 170, and the pipeline structure 170 can be provided with at least a temperature regulation circuit 171 and a detection circuit of a resistance temperature detector. The pipeline structure 170 can also be provided with other circuits, that is to say, various circuits of the heating plate can be provided with the pipeline structure 170 . The temperature regulation circuit 171 is connected to the metal loop 111. Specifically, one end of the temperature regulation circuit 171 can be connected to the terminal 105 in the connection line, and the other end of the temperature regulation circuit 171 can be connected to the connection terminal 173 arranged at the bottom of the pipeline structure 170 .

The pipe structure 170 can be covered by Teflon 172 , specifically the Teflon 172 covers the inner surface of the pipe structure 170 , as shown in FIG. 3 . The Teflon 172 is used to prevent excess parasitic capacity from being generated in the internal temperature adjustment circuit 171 and the like.

In the embodiment of the present application, the heating plate further includes a cooling block 180 disposed around the bottom of the pipe structure 170 . A purge line 160 and a cooling line 151 may be provided in the cooling block 180 .

In practical applications, the heating plate may further include a support structure (Lifter pin) 106 , the support structure 106 runs through the surface of the heating plate to the heating side, and is used to support the substrate to be heated, and the substrate to be heated may be a wafer.

It can be seen that the embodiment of the present application provides a heating plate, the heating plate includes: a temperature regulation layer, the temperature regulation layer includes a plurality of temperature regulation regions, and the area difference between the plurality of temperature regulation regions is smaller than the target threshold value, that is, The areas between multiple temperature adjustment areas are basically equal, and at least one metal circuit is set in the temperature adjustment area, and the temperature of the temperature adjustment area is adjusted by using the metal circuit, so as to reduce the temperature difference between different temperature adjustment areas of the heating plate, so that multiple temperature adjustment areas The temperature between the areas is the same, that is, the metal circuit corresponding to a certain temperature adjustment area is used to fine-tune the temperature of the temperature adjustment area, so as to realize the temperature balance between different temperature adjustment areas, and then improve the temperature uniformity of the heating plate.

Based on the heating plate provided in the above embodiments, the embodiment of the present application also provides a manufacturing method of the heating plate, and its working principle will be described in detail below with reference to the accompanying drawings.

Referring to FIG. 4 , this figure is a schematic flowchart of a method for manufacturing a heating plate provided in an embodiment of the present application.

The manufacturing method of the heating plate provided in the embodiment of the present application comprises the following steps:

S101, pressing the target slurry to form multiple thin layer structures.

In the embodiment of the present application, the temperature regulating layer and the temperature raising layer included in the heating plate can be manufactured and formed by using the target slurry, where the target slurry includes at least aluminum nitride material. Specifically, the target slurry can be pressed to form a plurality of thin layer structures.

S102, printing a circuit on each thin layer structure.

In the embodiment of the present application, when forming each thin-layer structure by pressing, wiring can be printed on the thin-layer structure, and the wiring is a metal material, such as tungsten (W) or platinum (Pt).

In practical application, the heating circuit is also included in the heating layer, so the circuit of the heating circuit can also be printed in the thin layer structure.

S103, stacking and firing multiple thin-layer structures.

In the embodiment of the present application, multiple thin layer structures are laminated and fired to finally form an integrated structure including a temperature regulating layer and a temperature raising layer, wherein the temperature raising layer is disposed below the temperature regulating layer.

Since multiple thin-layer structures are stacked, correspondingly, the lines included in the thin-layer structures are also stacked, that is, the lines form a multi-layer stacked structure.

S104, punching holes in multiple thin-layer structures and filling the holes with metal materials, and using the metal materials to connect multilayer stacked circuits.

In the embodiment of the present application, multiple thin layer structures may be drilled and filled with metal material, and the metal material may be used to connect the lines of the multilayer stack, so as to finally form the temperature regulation layer in the temperature regulation layer.

Based on the heating plate provided in the above embodiment, the embodiment of the present application also provides a semiconductor device, the semiconductor device includes the heating plate described in the above embodiment, so that the heating plate placed in the semiconductor device The object to be heated is heated.

Each embodiment in this specification is described in a progressive manner, the same and similar parts of each embodiment can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the manufacturing method embodiment, since it is basically similar to the structural embodiment, the description is relatively simple, and for the related parts, please refer to the part of the description of the structural embodiment. The structural embodiments described above are only illustrative, and the units and modules described as separate components may or may not be physically separated. In addition, some or all of the units and modules can also be selected according to actual needs to achieve the purpose of the solution of this embodiment. It can be understood and implemented by those skilled in the art without creative effort.

The above descriptions are only the preferred embodiments of the present application. Although the present application has been disclosed as above with preferred embodiments, it is not intended to limit the present application. Any person familiar with the art, without departing from the scope of the technical solution of the application, can use the methods and technical content disclosed above to make many possible changes and modifications to the technical solution of the application, or modify the equivalent of equivalent changes Example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application that do not deviate from the content of the technical solution of the present application still fall within the protection scope of the technical solution of the present application.

Claims (23)

1. A heating plate, characterized in that, the heating plate comprises: a temperature regulation layer; the temperature regulation layer comprises a plurality of temperature regulation regions, and the area difference between the plurality of temperature regulation regions is less than a target threshold; The temperature adjustment area is provided with at least one metal circuit, and the temperature of the temperature adjustment area is adjusted by using the metal circuit, so that the temperature among the plurality of temperature adjustment areas included in the temperature adjustment layer is the same. 2. The heating plate according to claim 1, wherein the temperature regulation layer comprises a plurality of concentric ring regions, each of the concentric ring regions includes at least one temperature regulation region. 3. The heating plate according to claim 1, characterized in that, the material of the temperature regulating layer is aluminum nitride, and the material of the metal circuit is tungsten or platinum. 4. The heating plate according to claim 1, further comprising a resistance temperature detector connected to the metal loop; The resistance temperature detector is used to obtain the impedance of the metal loop, so as to determine the actual temperature change value of the temperature adjustment area according to the impedance of the metal loop. 5 . The heating plate according to claim 1 , further comprising a ground electrode layer, the ground electrode layer comprising a return electrode, and the return electrode is connected to the metal circuit. 6. The heating plate according to claim 1, characterized in that, the heating plate includes a heating side where the object to be heated is placed, and the heating plate also includes a temperature raising layer, and the temperature raising layer is arranged away from the temperature regulating layer. side of the heated side. 7. The heating plate according to claim 6, wherein the temperature raising layer includes a heating circuit, the temperature raising layer and the temperature regulating layer are integrated, and the integrated structure is formed of aluminum nitride material The heating circuit and the metal circuit are respectively printed on the laminated structure and then stacked and sintered to form the laminated structure. 8 . The heating plate according to claim 6 , further comprising a heat insulating layer, the heat insulating layer being disposed on a side of the heating layer away from the heating side. 9 . 9. The heating plate according to claim 8, wherein the material of the heat insulating layer comprises opaque quartz or aluminum oxide. 10 . The heating plate according to claim 8 , further comprising a ceramic layer, the ceramic layer being disposed on a side of the heat insulation layer away from the heating side. 11 . 11. The heating plate of claim 10, wherein the material of the ceramic layer comprises aluminum oxide. 12. The heating plate according to claim 10, characterized in that, the heat insulation layer and the ceramic layer include connecting wires, and the connecting wires are used to connect the metal circuit and a power supply; The connecting wire includes a first metal wire, a second metal wire and a terminal connected in sequence, the first metal wire is arranged on the heat insulation layer, and the second metal wire is arranged on the heat insulation layer and the heat insulation layer. The interface of the ceramic layer, the terminal is arranged on the ceramic layer. 13. The heating plate according to claim 12, wherein the terminals are formed by a soldering or brazing process, and the second metal lines are formed by a printing process. 14 . The heating plate according to claim 10 , further comprising a side wall heat insulating layer, the side wall heat insulating layer being arranged on the side walls of the temperature regulating layer, the temperature raising layer and the ceramic layer. 15. The heating plate according to claim 14, characterized in that, the side wall of the side wall insulation layer is provided with an anti-corrosion coating. 16. The heating plate according to claim 15, characterized in that, the material of the anti-corrosion coating is aluminum oxide formed by aluminum spraying process. 17. The heating plate according to any one of claims 1-16, further comprising a purge pipeline, the purge pipeline is arranged inside the heating plate, and is used to clean the The interface is purged. 18. The heating plate according to any one of claims 1-16, characterized in that, it also includes a pipeline structure covered by Teflon, and the pipeline structure is used to set at least a temperature regulation circuit, the The temperature regulating circuit is connected with the metal loop. 19. The heating plate according to claim 10, further comprising a cooling plate, the cooling plate being arranged on the side of the ceramic layer away from the heating side; A cooling pipeline is arranged in the cooling plate, and cooling water is arranged in the cooling pipeline. 20. The heating plate according to any one of claims 1-16, wherein the target threshold comprises a target ratio, and the target ratio is less than or equal to 5%. 21. The heating plate according to any one of claims 1-16, characterized in that, the number of the temperature adjustment areas is greater than 20. 22. A method for manufacturing a heating plate, characterized in that the method comprises: pressing a target slurry to form a plurality of thin layer structures, the target slurry including at least aluminum nitride; Printing lines on each thin layer structure; stacking and firing the multiple thin-layer structures, the multiple thin-layer structures include multi-layer stacked circuits; Drilling holes in the plurality of thin-layer structures and filling the holes with metal materials, using the metal materials to connect the multilayer stacked circuits. 23. A semiconductor device, characterized in that the semiconductor device comprises the heating plate according to any one of claims 1-21.

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