CN116360206B - Optical proximity correction method and device - Google Patents
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- CN116360206B CN116360206B CN202310625840.6A CN202310625840A CN116360206B CN 116360206 B CN116360206 B CN 116360206B CN 202310625840 A CN202310625840 A CN 202310625840A CN 116360206 B CN116360206 B CN 116360206B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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Abstract
The present disclosure provides an optical proximity correction method and apparatus. The method comprises the following steps: forming a first optical auxiliary pattern and a second optical auxiliary pattern in the original pattern by using a first optical auxiliary pattern forming mode and a second optical auxiliary pattern forming mode respectively; determining that an abnormal optical auxiliary pattern exists in the original pattern, wherein the abnormal optical auxiliary pattern is formed by a first optical auxiliary pattern and a second optical auxiliary pattern, and the abnormal optical auxiliary pattern is an optical auxiliary pattern capable of forming an exposure pattern on the substrate; and processing the abnormal optical auxiliary pattern to obtain a target pattern comprising a target optical auxiliary pattern and an original pattern, wherein the target optical auxiliary pattern is an optical auxiliary pattern which does not form an exposure pattern on the substrate. The method of the embodiment of the disclosure can improve the accuracy of the required target graph.
Description
Technical Field
The disclosure relates to the field of semiconductor technology, and in particular, to an optical proximity correction method and device.
Background
Optical proximity correction (Optical Proximity Correction, OPC) is a lithographic enhancement technique used in the production of semiconductor devices to ensure that the edges of the patterns involved in the production process are completely etched.
As integrated circuit devices shrink and integrate, the critical dimensions of each layer become smaller, and in semiconductor processes, mask patterns are often transferred onto a silicon wafer by photolithography to form each layer pattern, but due to the reduced dimensions of each device, the accuracy of photolithography decreases. In the related art, sub-resolution auxiliary patterns are added around patterns in an integrated circuit design layout to improve a process window and improve the accuracy of photoetching. However, in the actual production process, the time for forming the sub-resolution auxiliary pattern is long, the accuracy is low, and the process requirements are difficult to meet, so that the yield of the semiconductor device is reduced.
The above information disclosed in the background section is only for enhancement of understanding of the background of the disclosure and thus it may include information that does not form a related art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The embodiment of the disclosure provides an optical proximity correction method, which can improve the accuracy of a required target graph.
The embodiment of the disclosure provides an optical proximity correction method, which comprises the following steps: forming a first optical auxiliary pattern and a second optical auxiliary pattern in the original pattern by using a first optical auxiliary pattern forming mode and a second optical auxiliary pattern forming mode respectively; determining that an abnormal optical auxiliary pattern exists in the original pattern, wherein the abnormal optical auxiliary pattern is formed by the first optical auxiliary pattern and the second optical auxiliary pattern, and the abnormal optical auxiliary pattern is an optical auxiliary pattern capable of forming an exposure pattern on a substrate; and processing the abnormal optical auxiliary graph to obtain a target graph comprising a target optical auxiliary graph and the original graph, wherein the target optical auxiliary graph is an optical auxiliary graph which does not form an exposure graph on the substrate.
In some embodiments, forming a first optical auxiliary pattern in the original pattern using a first optical auxiliary pattern forming manner includes: analyzing the structure of the original graph to obtain a plurality of minimum repeated units in the original graph; processing any one of the minimum repeating units by using the first optical auxiliary pattern forming mode to form a first optical auxiliary pattern of the minimum repeating unit; and copying the first optical auxiliary graph of the minimum repeating unit for each of the minimum repeating units remaining in the plurality of minimum repeating units to form the first optical auxiliary graph.
In some embodiments, forming a second optical assist feature in the original feature using a second optical assist feature forming means, comprising: analyzing the structure of the original graph to obtain a plurality of minimum repeated units in the original graph; processing the minimum repeating unit by using the second optical auxiliary pattern forming mode to form a second optical auxiliary pattern of the minimum repeating unit; and copying a second optical auxiliary pattern of the minimum repeating unit for each of the minimum repeating units remaining in the plurality of minimum repeating units to form the second optical auxiliary pattern.
In some embodiments, determining that an anomalous optical assist feature is present in the original feature comprises: determining the first optical auxiliary pattern and the second optical auxiliary pattern which are communicated; determining that the first optical auxiliary pattern and the second optical auxiliary pattern capable of being exposed to light are the abnormal optical auxiliary pattern; and/or determining the first optical auxiliary pattern and the second optical auxiliary pattern which are not communicated and have the minimum spacing smaller than a preset threshold value; determining the first optical auxiliary pattern and the second optical auxiliary pattern which can be exposed and are not communicated as the abnormal optical auxiliary pattern.
In some embodiments, processing the anomalous optical assist feature to obtain a target feature comprising a target optical assist feature and the original feature comprises: and continuously adjusting and iterating the position and the size of the abnormal optical auxiliary pattern until the abnormal optical auxiliary pattern cannot be exposed, wherein the abnormal optical auxiliary pattern is formed into the target optical auxiliary pattern.
In some embodiments, based on the original pattern, obtaining the repeating pattern area, forming a second optical auxiliary pattern using a second optical auxiliary pattern forming manner includes: and forming the second optical auxiliary pattern at a corner of the repeated pattern region.
In some embodiments, the method further comprises: obtaining a repeated pattern area based on the original pattern; obtaining an inner area and an outer area of the repeated pattern area based on the repeated pattern area; determining the anomalous optical assist pattern of the inner region and the anomalous optical assist pattern of the outer region; respectively acquiring an initial inner position and an initial inner size of the abnormal optical auxiliary pattern of the inner region and an initial outer position and an initial outer size of the abnormal optical auxiliary pattern of the outer region; and continuously adjusting iteration to the initial inner position and the initial inner dimension of the abnormal optical auxiliary pattern of the inner region and the initial outer position and the initial outer dimension of the abnormal optical auxiliary pattern of the outer region, respectively, until the abnormal optical auxiliary patterns of the inner region and the outer region cannot be exposed, the abnormal optical auxiliary pattern being formed as the target optical auxiliary pattern.
In some embodiments, the first optical auxiliary pattern forming manner includes any one or more of a rule-based auxiliary pattern forming manner, a model-based auxiliary pattern forming manner, a design rule-based auxiliary pattern forming manner, and a mask rule-based auxiliary pattern forming manner.
In some embodiments, the second optically assisted patterning comprises a continuous transmissive mask assisted patterning.
The embodiment of the disclosure also provides an optical proximity correction device, which comprises a forming module, a determining module and a processing module.
The forming module is used for forming a first optical auxiliary pattern and a second optical auxiliary pattern in the original pattern by using a first optical auxiliary pattern forming mode and a second optical auxiliary pattern forming mode respectively.
The determination module is used for determining that an abnormal optical auxiliary pattern exists in the original pattern, wherein the abnormal optical auxiliary pattern is formed by the first optical auxiliary pattern and the second optical auxiliary pattern, and the abnormal optical auxiliary pattern is an optical auxiliary pattern capable of forming an exposure pattern on a substrate.
And the processing module is used for processing the abnormal optical auxiliary graph to obtain a target graph comprising a target optical auxiliary graph and the original graph, wherein the target optical auxiliary graph is an optical auxiliary graph which does not form an exposure graph on the substrate.
As can be seen from the above technical solutions, the optical proximity correction method according to the embodiments of the present disclosure has at least one of the following advantages and positive effects:
In the embodiment of the disclosure, the first optical auxiliary pattern and the second optical auxiliary pattern are formed by using the first optical auxiliary pattern forming mode and the second optical auxiliary pattern forming mode respectively, the abnormal optical auxiliary pattern is determined by the first optical auxiliary pattern and the second optical auxiliary pattern, and the abnormal optical auxiliary pattern is processed, namely, the two optical auxiliary pattern forming modes are used in a combined way, so that the forming time of the optical auxiliary pattern is reduced, and all the optical auxiliary patterns are not exposed by processing the abnormal optical auxiliary pattern, so that the accuracy and consistency of the required target pattern are improved, the accuracy of the subsequent photoetching process is improved, and the yield of the semiconductor device is improved.
Drawings
The above and other features and advantages of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 is a flow chart of an optical proximity correction method according to some embodiments of the present disclosure;
FIG. 2 is a schematic illustration of an optical assist feature having a rectangular form formed using a second optical assist feature formation shown in some embodiments of the present disclosure;
FIG. 3 is a schematic illustration of an optical assist feature in the form of a step with lines formed using a second optical assist feature formation method shown in some embodiments of the present disclosure;
FIG. 4 is a schematic illustration of an optical assist feature in the form of a smooth curve using lines formed by a second optical assist feature formation method according to some embodiments of the present disclosure;
FIG. 5 is an original graphical representation (a) at a transition region and a GDS (Geometry Data Standard, geometric data standard layout) representation (b) thereof according to some embodiments of the present disclosure;
FIG. 6 is a schematic representation of the corresponding repeating unit obtained from analysis from the original pattern shown in FIG. 5;
FIG. 7 is a partial schematic view of forming a first optically assisted feature in an original feature shown in some embodiments of the present disclosure;
FIG. 8 is a partial schematic view of forming a second optical assist feature in an original feature, showing an anomalous optical assist feature, shown in some embodiments of the disclosure;
FIG. 9 is a flow chart illustrating an iteration of adjusting a second optically assisted feature in an anomalous optically assisted feature according to some embodiments of the disclosure;
FIG. 10 is a schematic diagram of processing an anomalous optical assist feature to form a target feature in accordance with some embodiments of the disclosure;
FIG. 11 is a schematic diagram illustrating a process for handling anomalous optical assist patterns in accordance with some embodiments of the disclosure;
FIG. 12 is a schematic view of forming a first optical auxiliary pattern and a second optical auxiliary pattern and an abnormal optical auxiliary pattern thereof in an original pattern according to other embodiments of the present disclosure;
FIG. 13 is a schematic illustration of the target pattern formed after processing the anomalous optical assist pattern of FIG. 12;
FIG. 14 is a block diagram of an optical proximity correction device shown in some embodiments of the present disclosure;
FIG. 15 is a schematic diagram of a computer device according to some embodiments of the present disclosure;
fig. 16 is a schematic diagram of a computer-readable storage medium shown in some embodiments of the disclosure.
Reference numerals illustrate:
1. an original pattern; 11. a first optical auxiliary pattern; 12. a second optical auxiliary pattern; 13. abnormal optical auxiliary patterns; 14. a minimal repeating unit; 14', a first minimal repeating unit; 14", a second minimal repeating unit; 15. A target optical auxiliary pattern; 16. a target pattern; A. an array region; C. a transition zone; p, peripheral area; s1, a first repeated area; s2, a second repetition area; s3, a non-repeated area; I. an inner region; o, outer region.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
In the following description of various exemplary embodiments of the present disclosure, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration various exemplary structures in which aspects of the disclosure may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be used, and structural and functional modifications may be made without departing from the scope of the present disclosure. Moreover, although the terms "over," "between," "within," and the like may be used in this specification to describe various exemplary features and elements of the disclosure, these terms are used herein for convenience only, e.g., in accordance with the directions of examples in the drawings. Nothing in this specification should be construed as requiring a particular three-dimensional orientation of structures to fall within the scope of this disclosure. Furthermore, the terms "first," "second," and the like are used merely as labels, and are not intended to limit the numerals of their objects.
The flow diagrams depicted in the figures are exemplary only, and do not necessarily include all of the elements and operations/steps, nor must they be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the order of actual execution may be changed according to actual situations.
In addition, in the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless specifically defined otherwise.
As shown in fig. 1, an embodiment of the present disclosure provides an optical proximity correction method, which includes the following steps S110 to S130.
S110: the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 are formed in the original pattern 1 by using the first optical auxiliary pattern forming method and the second optical auxiliary pattern forming method, respectively.
As shown in fig. 2, the original pattern 1 refers to a pattern that a user finally needs to form on a substrate, and there may be a plurality of original patterns, only one of which is indicated by reference numeral 1 in fig. 2 as an example. The embodiment of the disclosure pre-designs the mask pattern on the mask plate, so that the mask pattern can form a photoetching pattern close to the original pattern 1 on the photoresist layer after the mask pattern is subjected to a photoetching process. The substrate may be a wafer or a chip.
In some embodiments, the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 are Sub-resolution auxiliary patterns (Sub-Resolution Assistant Feature, SRAF), and the dimensions of the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 are smaller than the imaging resolution of the lithography system, so that the lithography patterns are not formed when the first optical auxiliary pattern and the second optical auxiliary pattern are exposed, but the distribution of the light intensity of the lithography imaging of the nearby original pattern 1 can be influenced, so that the lithography of the original pattern 1 is more accurate.
Wherein the first optical auxiliary pattern 11 is formed by a first optical auxiliary pattern forming method. In some embodiments, the first optical auxiliary pattern formation may include any one or more of a Rule-based auxiliary pattern formation (Rule-based SRAF), a Model-based auxiliary pattern formation (Model-based SRAF), a design Rule Check-based auxiliary pattern formation (Design Rule Check, DRC SRAF), a Mask Rule Check-based auxiliary pattern formation (MRC SRAF), and the like.
The second optical auxiliary pattern 12 is formed by a second optical auxiliary pattern forming method. In some embodiments, the second optical assist patterning may include a continuous transmission mask assist patterning (Continuous transmission mask, CTM SRAF), which is one practical application of inverse lithography (Inverse Lithography Technology, ILT).
ILT is a technique for inverting a pattern to be realized on a substrate as a target to calculate a pattern required on a mask. The ILT obtains an ideal mask pattern through complex inversion mathematical calculation, and a mask designed by the method can provide higher pattern contrast during exposure.
CTM is a method for iteratively forming a reference map, which can extract and place optical auxiliary patterns with higher precision. The optically assisted pattern formed by the CTM may be in the form of a Rectangle (as shown in fig. 2), the lines may be in the form of a step that is not smooth (as shown in fig. 3), or the lines may be in the form of a curve that is smooth (as shown in fig. 4). In the actual use process, those skilled in the art can select according to the needs, and the present invention is not particularly limited. CTM can improve the lithography process window, i.e., imaging accuracy, exposure and depth of focus.
In the embodiment of the present disclosure, the distribution of the original graphic 1 may correspond to an array region (cell) a, a transition region (core) C, and a peripheral region (peripheral) P. The transition region C surrounds the array region a, and the peripheral region P surrounds the transition region C. Wherein the original pattern 1 in the array area a is substantially completely repeated, the original pattern 1 in the transition area C is partially repeated, partially not repeated, and the original pattern in the peripheral area P is substantially not repeated.
Based on this, as shown in fig. 7, forming the first optical auxiliary pattern 11 in the original pattern 1 using the first optical auxiliary pattern forming manner in S110 in the embodiment of the present disclosure may include: analyzing the structure of the original graph 1 to obtain a plurality of minimum repeated units 14 in the original graph 1; processing any one of the minimum repeating units 14 by using a first optical auxiliary pattern forming method to form a first optical auxiliary pattern 11 of the minimum repeating unit 14; for each of the minimal repeating units 14 remaining in the plurality of minimal repeating units 14, the first optical auxiliary pattern 11 of the minimal repeating unit 14 is duplicated, forming the first optical auxiliary pattern 11.
Specifically, the structure of the original pattern 1 located in any region can be analyzed to obtain a plurality of minimum repeating units 14 of the original pattern 1, regardless of the region of the original pattern 1. For example, as shown in fig. 7, when analysis is performed in the array area a, if the original pattern 1 in the array area a is entirely a repeated pattern, then all the minimum repeated units 14 in the entire array area a can be obtained. As shown in fig. 5 and 6, where a in fig. 5 is a schematic diagram of the distribution of the original pattern of the transition region C, b is a GDS simulation of the original pattern of the transition region C, where analysis may obtain the smallest repeating unit 14 in the repeated original pattern 1 without the repeated original pattern 1, the result may show no repetition. As shown in fig. 5 and 6, the analysis is performed in the peripheral region P, and if there is no repeating minimal repeating unit 14 in the peripheral region P, the result is displayed without repetition or display.
Of course, if the original pattern 1 of the array area a is determined to be the total repeated pattern in advance, and the peripheral area P does not have the repeated original pattern 1, the repeated analysis of the array area a and the peripheral area P may be omitted, thereby saving time and energy.
The minimal repeating unit 14 may be one original pattern 1 or a group of original patterns 1 with an arrangement rule. After the minimum repeating units 14 are obtained, any one of the minimum repeating units 14 is processed by the first optical auxiliary pattern forming method to form the first optical auxiliary pattern 11 of the minimum repeating unit 14, and then the first optical auxiliary pattern 11 of the above-described one minimum repeating unit 14 is duplicated for each of the remaining minimum repeating units 14 to form the first optical auxiliary patterns 11 of all the minimum repeating units 14, that is, the first optical auxiliary patterns 11 of the original pattern 1. Therefore, only the first optical auxiliary pattern 11 of any minimum repeating unit 14 is required to be acquired, and the first optical auxiliary pattern 11 of the whole original pattern 1 can be acquired in a copy-and-paste mode, so that the processing time is greatly reduced, and meanwhile, the energy consumption is saved.
In some embodiments, as shown in fig. 8, forming the second optical auxiliary pattern 12 in the original pattern 1 in the second optical auxiliary pattern forming manner in S110 in the embodiment of the present disclosure may include: analyzing the structure of the original graph 1 to obtain a plurality of minimum repeated units 14 in the original graph 1; processing the minimal repeating units 14 using a second optical assist pattern formation to form second optical assist patterns 12 of minimal repeating units 14; the second optical auxiliary pattern 12 of the minimal repeating unit 14 is duplicated for each minimal repeating unit 14 remaining in the plurality of minimal repeating units 14, forming the second optical auxiliary pattern 12.
Since the second optical auxiliary pattern forming manner may be CTM SRAF, which is a method of forming a reference pattern by iterative and inversion calculation, the accuracy of the formed auxiliary pattern is higher, but since the iterative and calculation may cause a decrease in processing speed and time consumption, in the embodiment of the disclosure, similar to the formation of the first optical auxiliary pattern 11, after the minimum repeating unit 14 is obtained, any one of the minimum repeating units 14 is processed by the second optical auxiliary pattern forming manner to form the second optical auxiliary pattern 12 of the minimum repeating unit 14, and then for each of the remaining minimum repeating units 14, the second optical auxiliary pattern 12 of the minimum repeating unit 14 is duplicated to form all the second optical auxiliary patterns 12 of the minimum repeating unit 14, i.e. the second optical auxiliary pattern 12 of the original pattern 1 is formed. Therefore, only the second optical auxiliary pattern 12 of any minimum repeating unit 14 is required to be obtained, the second optical auxiliary pattern 12 of the whole original pattern 1 can be obtained by copying and pasting, the processing time is greatly reduced, the energy consumption is saved, and meanwhile, the more accurate second optical auxiliary pattern 12 can be obtained.
In some embodiments, after analyzing the structure of the original pattern 1 to obtain a plurality of minimum repeating units 14, any one of the minimum repeating units 14 in a part of the area may be processed by using the first optical auxiliary pattern forming method to form a first optical auxiliary pattern 11 of the minimum repeating unit 14, and the remaining minimum repeating units 14 in the area may be duplicated to the first optical auxiliary pattern 11. For another partial region, any of the minimum repeating units 14 of the partial region may be processed by the second optical auxiliary pattern forming method to form the second optical auxiliary pattern 12 of the minimum repeating unit 14, and the second optical auxiliary pattern 12 may be duplicated for the remaining minimum repeating units 14 of the other partial region.
The method in the above-described embodiment may be applied to the original pattern 1 process of the transition region C. Since the transition region C includes both a repeating region and a non-repeating region, and the repeating units in different repeating regions are also different, as shown in fig. 5 and 6, the method according to the embodiment of the disclosure may further include: analyzing the structure of a transition zone C in the original graph 1 to obtain a plurality of repeated zones; the structure in each repeated area of the original pattern 1 is analyzed, and a plurality of minimum repeated units 14 of each repeated area are acquired.
In an exemplary embodiment, as shown in fig. 5, by analyzing the structure of the transition region C of the original pattern 1, the pattern of the transition region C is analyzed to include a first repeated region S1, a second repeated region S2, and a non-repeated region S3. As shown in fig. 6, the structure in each of the repeating regions is analyzed, and the plurality of first minimum repeating units 14' of the first repeating region S1 and the plurality of second minimum repeating units 14″ of the second repeating region S2 are acquired, and since the non-repeating region S3 does not have the minimum repeating units, the non-repeating region S3 is not displayed in the result. As can be seen from fig. 6, the plurality of first minimal repeating units 14' of the first repeating region S1 are a plurality of rectangles arranged laterally, and the plurality of second minimal repeating units 14″ of the second repeating region S2 are a plurality of rectangles arranged longitudinally. The thus obtained plurality of minimum repeating units of different repeating regions form the first and second optical auxiliary patterns 11 and 12 of the first and second minimum repeating units 14', 14″ using the first and second optical auxiliary pattern forming methods, respectively, and then copy, forming the first and second optical auxiliary patterns 11 and 12 of the original pattern 1 of all the repeating regions in the transition region C, using the method in the above embodiment.
For the non-repeating region S3, the first optical auxiliary pattern 11 of each original pattern 1 may be formed by using the first optical auxiliary pattern forming method. It should be noted that, for the non-repeating region S3 and the peripheral region P having no repeating unit shown in fig. 5, the first optical auxiliary pattern 11 may be formed by using the first optical auxiliary pattern forming method, because the second optical auxiliary pattern 12 is formed by using the iterative and inversion calculation method in the second optical auxiliary pattern forming method, the calculation amount is large, and although the accuracy of the formed auxiliary pattern is higher, the processing speed is reduced, and the time consumption is serious. The processing speed of the first optical auxiliary pattern forming method is faster than that of the second optical auxiliary pattern forming method, so that the first optical auxiliary pattern forming method can be adopted in consideration of the processing speed if other influences are not generated and the formed first optical auxiliary pattern is within a preferable accuracy range.
In some embodiments, the original pattern 1 may be processed by forming the first optical auxiliary pattern 11 and then forming the second optical auxiliary pattern 12, or by forming the second optical auxiliary pattern 12 and then forming the first optical auxiliary pattern 11, and a person skilled in the art may select the order of forming according to the actual situation, which is not limited herein.
S120: it is determined that an abnormal optical auxiliary pattern 13 exists in the original pattern 1, the abnormal optical auxiliary pattern 13 being formed of the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12, the abnormal optical auxiliary pattern 13 being an optical auxiliary pattern capable of forming an exposure pattern on the substrate.
As shown in fig. 7 to 8, after the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 are formed in the original pattern 1, the above-described abnormal optical auxiliary pattern 13 may occur. Determining that the anomalous optical assist pattern 13 is present in the original pattern 1 includes: determining a first optical auxiliary pattern 11 and a second optical auxiliary pattern 12 which are communicated; the communicated first optical auxiliary pattern 11 and second optical auxiliary pattern 12 that can be exposed are determined to be the abnormal optical auxiliary pattern 13.
Specifically, as shown in fig. 8, the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 have a portion where they are connected and overlap, and if at least two optical auxiliary patterns are connected, the sizes of the two connected optical auxiliary patterns become larger, and when the sizes exceed the size of the system resolution, the optical auxiliary patterns are exposed, and further, patterns which are not desired by the user are formed in the original pattern 1, and these patterns which can be exposed are called abnormal optical auxiliary patterns 13, and therefore, it is necessary to adjust these abnormal optical auxiliary patterns 13 so as not to be exposed.
In some embodiments, determining first and second optical auxiliary patterns 11 and 12 that are not connected and have a minimum pitch less than a preset threshold; the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 which are not connected and can be exposed are determined as the abnormal optical auxiliary pattern 13. Specifically, the abnormal optical auxiliary pattern 13 may further include the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 which are not connected, and the distance between the corners or the distance between the adjacent edges of the two optical auxiliary patterns is smaller than a preset threshold, in which case, the two optical auxiliary patterns may be exposed due to the small distance. Therefore, it is also necessary to adjust the abnormal optical auxiliary pattern 13 of this type so that it cannot be exposed.
S130: the abnormal optical auxiliary pattern 13 is processed to obtain a target pattern 16 including a target optical auxiliary pattern 15 and the original pattern 1, the target optical auxiliary pattern 15 being an optical auxiliary pattern that does not form an exposure pattern on the substrate.
In some embodiments, processing the anomalous optical assist feature 13 to obtain a target feature 16 comprising the target optical assist feature 15 and the original feature 1, includes: the position and the size of the abnormal optical auxiliary pattern 13 are continuously adjusted and iterated until the abnormal optical auxiliary pattern 13 cannot be exposed, and the abnormal optical auxiliary pattern 13 is formed into a target optical auxiliary pattern 15; the target pattern 16 of the original pattern 1 includes a target optical auxiliary pattern 15 and the original pattern 1.
The target optical auxiliary pattern 15 is not exposed on the substrate, and the target pattern 16 of the original pattern 1 is formed as the target pattern 16 together with the original pattern 1 after the target optical auxiliary pattern 15 is obtained, so as to perform correction based on the target pattern 16.
In some embodiments, the position and size of the anomalous optical assist feature 13 is continuously adjusted and iterated, as shown in fig. 9, including the following steps S910 to S950.
S910: a first position of the anomalous optical assist pattern 13 is acquired and the anomalous optical assist pattern 13 is moved from the first position to the second position.
As shown in fig. 10, the abnormal optical auxiliary pattern 13 is exemplified as the first optical auxiliary pattern 11. The first position refers to the initial position of forming the first optical auxiliary pattern 11, and the initial positions of the three-stage first optical auxiliary pattern 11 as shown in fig. 10 are 94nm,94+92nm,94+92+104nm, respectively. The three-level first optical auxiliary pattern 11 may be understood as a pattern of three levels (or three layers) formed after light diffraction. The position of the first optical auxiliary pattern 11 can be expanded and moved outwards, so that the distance between the first optical auxiliary pattern 11 and the corresponding original pattern 1 is increased, and the distance between the third-level first optical auxiliary patterns 11 is increased, namely, the intervals between the patterns are pulled apart, so that the superposition and conjoined effects of the patterns and the conditions of too small intervals are avoided, and exposure is avoided. The second position is a position expanded from the first position. Of course, the position of the first optical auxiliary pattern 11 may be expanded inward as long as the abnormal optical auxiliary pattern 13 can be adjusted not to be exposed.
S920: a first size of the anomalous optical assist feature 13 is acquired and the first size of the anomalous optical assist feature 13 is modified to a second size.
The initial dimensions of the three-stage first optical auxiliary pattern 11 as shown in fig. 10 are respectively: of the first stageIs thatSecond level +.>Is->Third level->Is->. The modification of the size of the first optical auxiliary pattern 11, for example, the modification of the part is smaller and the modification of the part is larger, so that the first optical auxiliary pattern 11 can be far away from the original pattern 1 and the second optical auxiliary pattern 12, and the distance between the patterns is pulled away, so that exposure is avoided. The second size is a size modified from the first size, and specific values may be selected according to practical situations, which will not be described herein.
S930: iteration is performed using the second position and the second size to determine whether the anomalous optical assist feature 13 can be exposed.
Specifically, after the second position and the second size are obtained, the corresponding values thereof are iterated to determine whether the abnormal optical auxiliary pattern 13 at this time can still be exposed.
S940: if not, stopping iteration.
S950: if so, the position and size of the anomalous optical assist feature 13 are continuously adjusted.
Specifically, if it cannot be exposed, it is indicated that after the adjustment, the abnormal optical auxiliary pattern 13 has been formed as the target optical auxiliary pattern 15. If the exposure is enabled, it is indicated that the abnormal optical auxiliary pattern 13 still does not meet the requirement, and the adjustment of the position and/or the size of the abnormal optical auxiliary pattern 13 is continued until the abnormal optical auxiliary pattern 13 cannot be exposed after iteration. Thus, neither the first optical auxiliary pattern 11 nor the second optical auxiliary pattern 12 can be exposed to light, ensuring the accuracy and consistency of the original pattern 1.
In some embodiments, the iteration is continuously adjusted for the second optical auxiliary pattern 12 in the abnormal optical auxiliary pattern 13, and the specific method is the same as the iteration method of the first optical auxiliary pattern 11 and the method of forming the target optical auxiliary pattern 15 in the above embodiments, and will not be repeated here.
In some embodiments, as shown in fig. 11, acquiring the repeated pattern area based on the original pattern 1, forming the second optical auxiliary pattern 12 using the second optical auxiliary pattern forming manner includes: a second optical auxiliary pattern 12 is formed at a corner of the repeated pattern region. The first optical auxiliary pattern 11 is formed at other positions by using the first optical auxiliary pattern forming method. Since the pattern formed at the corner portion is liable to be error-prone, and the accuracy of the second optical auxiliary pattern 12 formed by the second optical auxiliary pattern forming method is higher, the error of the optical auxiliary pattern at the corner portion (corner) can be reduced, and the forming time of the second optical auxiliary pattern 12 can be saved. The structure of the original pattern 1 may be analyzed to obtain a repeating pattern area including repeating units.
With continued reference to fig. 11, an iterative process for continuously adjusting the second optical assist feature 12 is illustrated, wherein a rectangular dashed box represents the adjusted location. As can be seen from the figure, since other auxiliary patterns are affected during the adjustment of the second optical auxiliary pattern 12, the adjustment range can be flexibly changed, for example, the area of the rectangular frame may be increased or decreased during the adjustment until all the optical auxiliary patterns cannot be exposed.
In some embodiments, the method may be applied to the array area a where the original pattern is located. As shown in fig. 7 to 8 and 10, the method further includes: obtaining a repeated pattern area based on the original pattern 1, and obtaining an inner area I and an outer area O based on the repeated pattern area; an anomalous optical assist feature 13 for determining an inner region I and an anomalous optical assist feature 13 for determining an outer region O; acquiring an initial inner position and an initial inner size of the abnormal optical auxiliary pattern 13 of the inner area I and an initial outer position and an initial outer size of the abnormal optical auxiliary pattern 13 of the outer area O, respectively; the initial inner position and initial inner dimension of the anomalous optical assist feature 13 in the inner region I and the initial outer position and initial outer dimension of the anomalous optical assist feature 13 in the outer region O are continuously adjusted and iterated until the anomalous optical assist feature 13 in the inner region I and the anomalous optical assist feature 13 in the outer region O cannot be exposed, respectively, and the anomalous optical assist feature 13 is formed as a target optical assist feature 15.
As shown in fig. 10, the above-mentioned repetitive pattern region is exemplified by an array region a, where the original pattern 1 located in the first circle at the edge of the array region a is located is an outer region O, and the original pattern 1 located in the first circle is located is an inner region I.
The terms "inner" and "outer" are terms indicating relative positional relationships, for example, a direction from the edge of the array area a toward the center of the array area a is inward, and vice versa, which are merely for convenience of explanation and are not limiting.
The initial inner position and initial inner size of the anomalous optical assist feature 13 in the inner region I are obtained, and the initial outer position and initial outer size of the anomalous optical assist feature 13 in the outer region O are obtained, and the initial position and initial size of the anomalous optical assist feature 13 in the outer region O are obtained. The following table one lists the values of the initial positions and the initial sizes of the inner area I (taking as an example the area where the original pattern 1 of the second circle located at the edge of the array area a is located) and the outer area O.
List one
In Table one, SRAFH1 denotes the dimension of the auxiliary pattern in the horizontal direction, SRAFV1 denotes the dimension of the auxiliary pattern in the vertical direction. Wherein 1, 2, 3 respectively represent three levels of the optical auxiliary pattern in fig. 10. Initial values of the inner region I and the outer region O are listed in the table one, respectively, and thus the optical auxiliary pattern can be adjusted according to the initial values.
As shown in fig. 12 and 13, schematic diagrams of processing the anomalous optical assist pattern 13 shown in other embodiments are shown. As can be seen from fig. 12, the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 have overlapping portions and connected portions, which form an abnormal optical auxiliary pattern 13, the position and the size of the abnormal optical auxiliary pattern 13 are obtained, and the first optical auxiliary pattern 11 and/or the second optical auxiliary pattern 12 are subjected to continuous iterative adjustment, so that a target pattern 16 having a target optical auxiliary pattern 15 and an original pattern 1 as shown in fig. 13 is finally obtained. In this embodiment, by adjusting, a portion where the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 overlap is left, and a portion other than the overlap is removed to reduce the size of the abnormal optical auxiliary pattern 13 so that it cannot be exposed, as shown in fig. 13.
In summary, in the embodiment of the disclosure, the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 are formed by using the first optical auxiliary pattern forming manner and the second optical auxiliary pattern forming manner, the abnormal optical auxiliary pattern 13 is determined and processed by the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12, that is, the two optical auxiliary pattern forming manners are used in combination, so that the forming time of the optical auxiliary pattern is reduced, and all the optical auxiliary patterns are not exposed by processing the abnormal optical auxiliary pattern 13, thereby greatly improving the accuracy and consistency of the required target pattern 16, improving the accuracy of the subsequent photolithography process and improving the yield of the semiconductor device.
As shown in fig. 14, the disclosed embodiment also provides an optical proximity correction apparatus 1400, the apparatus 1400 including a forming module 1401, a determining module 1402, and a processing module 1403.
Wherein, the forming module 1401 is used for forming the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 in the original pattern 1 by using the first optical auxiliary pattern forming mode and the second optical auxiliary pattern forming mode respectively.
The determination module 1402 is configured to determine that an abnormal optical auxiliary pattern 13 exists in the original pattern 1, the abnormal optical auxiliary pattern 13 being formed of the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12, the abnormal optical auxiliary pattern 13 being an optical auxiliary pattern capable of forming an exposure pattern on the substrate.
The processing block 1403 is configured to process the abnormal optical auxiliary pattern 13 to obtain a target pattern 16 including a target optical auxiliary pattern 15 and the original pattern 1, the target optical auxiliary pattern 15 being an optical auxiliary pattern that does not form an exposure pattern on the substrate.
In some embodiments, the forming module 1401 is further configured to analyze the structure of the original graph 1, and obtain a plurality of minimal repeating units 14 in the original graph 1; processing any one of the minimum repeating units 14 by using a first optical auxiliary pattern forming method to form a first optical auxiliary pattern of the minimum repeating unit 14; for each minimal repeating unit 14 remaining in the plurality of minimal repeating units 14, the first optical auxiliary pattern of the minimal repeating unit 14 is duplicated, forming the first optical auxiliary pattern 11.
In some embodiments, the forming module 1401 is further configured to analyze the structure of the original graph 1, and obtain a plurality of minimal repeating units 14 in the original graph 1; processing the minimal repeating units 14 using a second optical assist pattern formation to form a second optical assist pattern of minimal repeating units 14; the second optical auxiliary pattern of the minimal repeating unit 14 is duplicated for each minimal repeating unit 14 remaining in the plurality of minimal repeating units 14, forming a second optical auxiliary pattern 12.
In some embodiments, the determining module 1402 is further for determining the communicated first optical auxiliary pattern 11 and second optical auxiliary pattern 12; the communicated first optical auxiliary pattern 11 and second optical auxiliary pattern 12 that can be exposed are determined to be the abnormal optical auxiliary pattern 13.
In some embodiments, processing module 1403 is also configured to continuously adjust the position and size of the anomalous optical assist feature 13 iteratively until the anomalous optical assist feature 13 cannot be exposed, the anomalous optical assist feature 13 being formed as a target optical assist feature 15.
In some embodiments, the forming module 1401 is further configured to obtain a repeated pattern area based on the original pattern 1, and then form the second optical auxiliary pattern 12 at a corner of the repeated pattern area.
In some embodiments, the processing module 1403 is further configured to obtain a repeated pattern area based on the original pattern, and obtain an inner area I and an outer area O of the repeated pattern area based on the repeated pattern area; an anomalous optical assist feature 13 for determining an inner region I and an anomalous optical assist feature 13 for determining an outer region O; the initial inner position and initial inner dimension of the anomalous optical assist feature 13 of the inner region I and the initial outer position and initial outer dimension of the anomalous optical assist feature 13 of the outer region O are acquired respectively, and the initial inner position and initial inner dimension of the anomalous optical assist feature 13 of the inner region I and the initial outer position and initial outer dimension of the anomalous optical assist feature 13 of the outer region O are continuously adjusted and iterated respectively until the anomalous optical assist features 13 of the inner region I and the outer region O cannot be exposed, the anomalous optical assist feature 13 being formed as the target optical assist feature 15.
In summary, the optical proximity correction device 1400 according to the embodiments of the present disclosure forms the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 by using the first optical auxiliary pattern forming manner and the second optical auxiliary pattern forming manner, determines the abnormal optical auxiliary pattern 13 by the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12, and processes the abnormal optical auxiliary pattern 13, that is, uses the two optical auxiliary pattern forming manners in combination, reduces the forming time of the optical auxiliary pattern, and by processing the abnormal optical auxiliary pattern 13, all the optical auxiliary patterns are not exposed, thereby greatly improving the accuracy and consistency of the required target pattern 16, improving the accuracy of the subsequent photolithography process, and improving the yield of the semiconductor device.
The embodiment of the disclosure also provides computer equipment. As shown in fig. 15, a computer device in an embodiment of the disclosure may include one or more processors 1501 and memory 1502. The processor 1501 is connected to the memory 1502, and as shown in fig. 15, the processor 1501 and the memory 1502 are connected via a bus 1504. In an exemplary embodiment, the computer device may also include an input-output interface 1503 coupled to the processor 1501, the memory 1502, and the bus 1504. The memory 1502 is used for storing a computer program including program instructions, the input output interface 1503 is used for receiving data and outputting data, such as for data interaction between a host and a computer device, or for data interaction between virtual machines in a host; the processor 1501 is used to execute program instructions stored in the memory 1502.
The processor 1501 may perform the following operations: forming a first optical auxiliary pattern 11 and a second optical auxiliary pattern 12 in the original pattern 1 by using a first optical auxiliary pattern forming method and a second optical auxiliary pattern forming method, respectively; determining that an abnormal optical auxiliary pattern 13 exists in the original pattern 1, the abnormal optical auxiliary pattern 13 being formed by the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12, the abnormal optical auxiliary pattern 13 being an optical auxiliary pattern capable of forming an exposure pattern on the substrate; the abnormal optical auxiliary pattern 13 is processed to obtain a target pattern 16 including a target optical auxiliary pattern 15 and the original pattern 1, the target optical auxiliary pattern 15 being an optical auxiliary pattern that does not form an exposure pattern on the substrate.
In some possible implementations, the processor 1501 may be a central processing unit (central processing unit, CPU), which may also be other general purpose processors, digital signal processors (digital signal processor, DSP), application specific integrated circuits (application specific integrated circuit, ASIC), off-the-shelf programmable gate arrays (field programmable gate array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 1502 may include read only memory and random access memory and provide instructions and data to the processor 1501 and input output interface 1503. A portion of memory 1502 may also include non-volatile random access memory. For example, the memory 1502 may also store information of device type.
In a specific implementation, the computer device may execute, through each built-in functional module, an implementation manner provided by each step in any method embodiment described above, and specifically may refer to an implementation manner provided by each step in a diagram shown in the method embodiment described above, which is not described herein again.
The embodiments of the present disclosure perform the steps of the method shown in any of the embodiments described above by providing a computer device including a processor 1501, an input-output interface 1503, and a memory 1502, and obtaining a computer program in the memory 1502 by the processor 1501.
The embodiments of the present disclosure further provide a computer readable storage medium 1600, where the computer readable storage medium 1600 stores a computer program, and the computer program is adapted to be loaded and executed by the processor 1501 to perform the optical proximity correction method provided by each step in any of the foregoing embodiments, and specifically refer to the implementation manner provided by each step in any of the foregoing embodiments, which is not repeated herein.
In addition, the description of the beneficial effects of the same method is omitted. For technical details not disclosed in the embodiments of the computer-readable storage medium 1600 related to the present disclosure, please refer to the description of the method embodiments of the present disclosure. As an example, a computer program may be deployed to be executed on one computer device or on multiple computer devices at one site or distributed across multiple sites and interconnected by a communication network.
The computer readable storage medium 1600 may be the optical proximity correction apparatus 1400 provided in any of the foregoing embodiments or an internal storage unit of the computer device, such as a hard disk or a memory of the computer device. The computer readable storage medium 1600 may also be an external storage device of the computer device, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) card, a flash card (flash card), etc. that are provided on the computer device. Further, the computer-readable storage medium 1600 may also include both internal and external storage units of the computer device. The computer readable storage medium 1600 is used to store the computer program and other programs and data needed by the computer device. The computer-readable storage medium 1600 may also be used to temporarily store data that has been output or is to be output.
The disclosed embodiments also provide a computer program product or computer program comprising computer instructions stored in a computer-readable storage medium 1600. The computer instructions are read from the computer-readable storage medium 1600 by a processor of a computer device, which executes the computer instructions, causing the computer device to perform the methods provided in the various alternatives in any of the embodiments described above.
In summary, the optical proximity correction method, the apparatus 1400, the computer device, the computer readable storage medium 1600 and the computer program product according to the embodiments of the present disclosure form the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12 by using the first optical auxiliary pattern forming method and the second optical auxiliary pattern forming method, respectively, determine the abnormal optical auxiliary pattern 13 by the first optical auxiliary pattern 11 and the second optical auxiliary pattern 12, and process the abnormal optical auxiliary pattern 13, that is, combine the two optical auxiliary pattern forming methods, reduce the forming time of the optical auxiliary pattern, and process the abnormal optical auxiliary pattern 13, so that all the optical auxiliary patterns are not exposed, thereby greatly improving the accuracy and consistency of the required target pattern 16, improving the accuracy of the subsequent photolithography process, and improving the yield of the semiconductor device.
It is to be understood that the disclosure is not limited in its application to the details of construction and the arrangement of components set forth in the disclosure. The disclosure is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications are within the scope of the present disclosure. It should be understood that the present disclosure disclosed and defined herein extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute various alternative aspects of the present disclosure. The embodiments described in this specification illustrate the best mode known for carrying out the disclosure and will enable those skilled in the art to utilize the disclosure.
Claims (7)
1. An optical proximity correction method, comprising:
forming a first optical auxiliary pattern in an original pattern of a part of the area by using a first optical auxiliary pattern forming mode, and forming a second optical auxiliary pattern in the original pattern of another part of the area by using a second optical auxiliary pattern forming mode;
determining that an abnormal optical auxiliary pattern exists in the original pattern, wherein the abnormal optical auxiliary pattern is formed by the first optical auxiliary pattern and the second optical auxiliary pattern, and the abnormal optical auxiliary pattern is an optical auxiliary pattern capable of forming an exposure pattern on a substrate;
processing the abnormal optical auxiliary graph to obtain a target graph comprising a target optical auxiliary graph and the original graph, wherein the processing comprises the following steps: continuously adjusting and iterating the position and the size of the abnormal optical auxiliary pattern until the abnormal optical auxiliary pattern cannot be exposed, wherein the abnormal optical auxiliary pattern is formed into the target optical auxiliary pattern; the target optical auxiliary pattern is an optical auxiliary pattern which does not form an exposure pattern on the substrate;
wherein the first optical auxiliary pattern forming mode comprises any one or more of a rule-based auxiliary pattern forming mode, a model-based auxiliary pattern forming mode, a design rule-based auxiliary pattern forming mode and a mask rule-based auxiliary pattern forming mode; the second optical auxiliary pattern formation mode includes a continuous transmission mask auxiliary pattern formation mode.
2. The method of claim 1, wherein forming the first optical assist pattern in the original pattern using the first optical assist pattern forming means comprises:
analyzing the structure of the original graph to obtain a plurality of minimum repeated units in the original graph;
processing any one of the minimum repeating units by using the first optical auxiliary pattern forming mode to form a first optical auxiliary pattern of the minimum repeating unit;
and copying the first optical auxiliary graph of the minimum repeating unit for each of the minimum repeating units remaining in the plurality of minimum repeating units to form the first optical auxiliary graph.
3. The method of claim 1, wherein forming a second optical assist pattern in the original pattern using a second optical assist pattern forming means, comprises:
analyzing the structure of the original graph to obtain a plurality of minimum repeated units in the original graph;
processing the minimum repeating unit by using the second optical auxiliary pattern forming mode to form a second optical auxiliary pattern of the minimum repeating unit;
and copying a second optical auxiliary pattern of the minimum repeating unit for each of the minimum repeating units remaining in the plurality of minimum repeating units to form the second optical auxiliary pattern.
4. The method of claim 1, wherein determining that an anomalous optical assist pattern is present in the original pattern comprises:
determining the first optical auxiliary pattern and the second optical auxiliary pattern which are communicated;
determining that the first optical auxiliary pattern and the second optical auxiliary pattern capable of being exposed to light are the abnormal optical auxiliary pattern; and/or the number of the groups of groups,
determining the first optical auxiliary pattern and the second optical auxiliary pattern which are not communicated and have the minimum spacing smaller than a preset threshold value;
determining the first optical auxiliary pattern and the second optical auxiliary pattern which can be exposed and are not communicated as the abnormal optical auxiliary pattern.
5. The method according to claim 1 or 4, wherein,
acquiring a repeated pattern area based on the original pattern;
forming the second optical auxiliary pattern using the second optical auxiliary pattern forming manner includes: and forming the second optical auxiliary pattern at a corner of the repeated pattern region.
6. The method as recited in claim 1, further comprising:
obtaining a repeated pattern area based on the original pattern;
obtaining an inner area and an outer area of the repeated pattern area based on the repeated pattern area;
Determining the anomalous optical assist pattern of the inner region and the anomalous optical assist pattern of the outer region;
respectively acquiring an initial inner position and an initial inner size of the abnormal optical auxiliary pattern of the inner region and an initial outer position and an initial outer size of the abnormal optical auxiliary pattern of the outer region;
and continuously adjusting iteration to the initial inner position and the initial inner dimension of the abnormal optical auxiliary pattern of the inner region and the initial outer position and the initial outer dimension of the abnormal optical auxiliary pattern of the outer region, respectively, until the abnormal optical auxiliary patterns of the inner region and the outer region cannot be exposed, the abnormal optical auxiliary pattern being formed as the target optical auxiliary pattern.
7. An optical proximity correction device, comprising:
a forming module, configured to form a first optical auxiliary pattern in an original pattern of a part of the area by using a first optical auxiliary pattern forming manner, and form a second optical auxiliary pattern in the original pattern of another part of the area by using a second optical auxiliary pattern forming manner;
wherein the first optical auxiliary pattern forming mode comprises any one or more of a rule-based auxiliary pattern forming mode, a model-based auxiliary pattern forming mode, a design rule-based auxiliary pattern forming mode and a mask rule-based auxiliary pattern forming mode; the second optical auxiliary pattern forming mode comprises a continuous transmission mask auxiliary pattern forming mode;
A determination module configured to determine that an abnormal optical auxiliary pattern exists in the original pattern, the abnormal optical auxiliary pattern being formed by the first optical auxiliary pattern and the second optical auxiliary pattern, the abnormal optical auxiliary pattern being an optical auxiliary pattern capable of forming an exposure pattern on a substrate;
the processing module is used for processing the abnormal optical auxiliary graph to obtain a target graph comprising a target optical auxiliary graph and the original graph, and comprises the following steps: continuously adjusting and iterating the position and the size of the abnormal optical auxiliary pattern until the abnormal optical auxiliary pattern cannot be exposed, wherein the abnormal optical auxiliary pattern is formed into the target optical auxiliary pattern; the target optical auxiliary pattern is an optical auxiliary pattern that does not form an exposure pattern on the substrate.
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