CN116334583A - Heating device, chemical vapor deposition equipment and purging method - Google Patents

Abstract

The invention discloses a heating device, chemical vapor deposition equipment and a purging method, which are used in the chemical vapor deposition equipment. The heating device includes: a heater base, and the heater base can be used to carry a substrate to be processed. The fixed edge ring is sheathed on the heater base, and a buffer cavity and a gap are located between the fixed edge ring and the heater base. The gap includes a horizontal gap and an inclined gap, one end of the horizontal gap communicates with the buffer chamber, the other end communicates with the inclined gap, and one end of the inclined gap opens toward the edge of the substrate. Several hollow air plugs are arranged in the heater base at intervals around the periphery of the heater base. Each air plug is provided with a through hole for ventilating into the buffer chamber. The invention can improve the uniformity of purging on the edge of the substrate.

Description

Heating device, chemical vapor deposition equipment and purging method

technical field

The invention relates to the technical field of semiconductor processing equipment, in particular to a heating device, chemical vapor deposition equipment and a purging method.

Background technique

A chemical vapor deposition (Chemical Vapor Deposition, CVD for short) reaction device or an atomic layer deposition (Atomic layer deposition, ALD for short ALD) reaction device is placed with a carrier plate (substrate supporting component) for processing a substrate during deposition. A typical vapor deposition reactor structure is a reaction chamber surrounded by side walls of the reaction chamber. The reaction chamber includes a shaft structure, and a heating device on which a substrate is placed is installed on the top of the shaft structure. The top of the reaction chamber includes a gas shower head, which is used to uniformly inject the reaction gas from the reaction gas source into the reaction chamber to realize the processing of the substrate. The bottom of the reaction chamber also includes an air extraction device to control the internal pressure of the reaction chamber and pump out the reaction chamber. exhaust gases generated during the process.

When using the above-mentioned reaction equipment to process the substrate (substrate or wafer), it is necessary to use the edge purge (Edge purge) function and the bottom purge (bottom purge) function to purge the substrate to reduce the pressure on the edge of the substrate support base. The deposit builds up to protect the substrate support pedestal from the process gases. The edge ring assembly can be kept at a relatively low temperature to help minimize deposits on the edge ring assembly; improving chamber performance, maintaining a clean environment for extended periods of time, and preventing reactive gases from contacting the backside of the wafer and contaminating it.

Through the edge purge test of the substrate, it is found that the hardware of the existing heating device cannot be changed, and the purge aperture depends on the assembly position of the two components. Due to the composition tolerance, the change of the purge aperture causes the substrate Uneven distribution of edge purge gas. At the same time, if the distribution of the purging airflow needs to be adjusted, the structure of the entire heater or heating device needs to be changed. In order to obtain an ideal airflow distribution, the structure must be changed for each test, which will inevitably lead to an increase in cost. The waiting period is long, and it is difficult to flexibly control the purge gas at the edge of the wafer in the prior art.

Contents of the invention

The object of the present invention is to provide a heating device, chemical vapor deposition equipment and a purging method, so as to realize the control of wafer edge effects and improve the purging uniformity of the substrate edge.

In order to achieve the above object, the present invention is achieved through the following technical solutions:

A heating device used in chemical vapor deposition equipment, comprising: a heater base, which can be used to carry a substrate to be processed. The fixed edge ring is sheathed on the heater base, and a buffer cavity and a gap are located between the fixed edge ring and the heater base. The gap includes a horizontal gap and an inclined gap, one end of the horizontal gap communicates with the buffer chamber, and the other end communicates with the inclined gap, and one end of the inclined gap opens toward the edge of the substrate. A plurality of hollow air plugs are arranged at intervals around the edge of the heater base in the heater base. Each of the air plugs is provided with a through hole for ventilating into the buffer cavity.

Optionally, the edge of the heater base is provided with several layers of steps extending radially inward; the fixed edge ring is located on several layers of the steps, and the several layers of the steps are close to the heater The surface of the first step on the bottom surface of the base and the inner surface of the fixed side ring form the buffer cavity. The gap is formed between the surfaces of the other steps and the inner surface of the fixed edge ring.

Optionally, the width of the horizontal gap is the same as or different from the width of the inclined gap.

Optionally, the steps include three layers, denoted as the first step, the second step and the third step; each of the air plugs is located below the first step, and the air plug passes through the first step. The first step surface communicates with the buffer cavity; the second step surface of the second step forms the horizontal gap with the inner surface of the fixed side ring; the side surface of the third step and the fixed side ring The inner surface constitutes said inclined gap.

Optionally, the buffer cavity is circular.

Optionally, the horizontal gap is circular.

Optionally, the inclined gap is circular.

Optionally, the horizontal width of the horizontal gap ranges from 1.5 mm to 5 mm.

Optionally, the vertical thickness of the horizontal gap ranges from 0.2 mm to 1 mm.

Optionally, the walls of the through holes in each of the air plugs are irregular.

Optionally, the through hole in each air plug is cylindrical.

Optionally, each of the air plugs is arranged obliquely in the heater base, and the end of the air plug near the first stepped surface is away from the central axis of the heater base; the air plug is far away from the One end of the first stepped surface is close to the central axis of the heater base.

Optionally, the outer surface of each air plug is cylindrical.

Optionally, each air plug is made of aluminum material.

Optionally, it also includes: a movable side ring sleeved on the fixed side ring, and the inner diameter of the movable side ring is smaller than the inner diameter of the fixed side ring.

In another aspect, the present invention also provides a chemical vapor deposition equipment, comprising: a reaction chamber; a gas shower head is arranged at the top of the reaction chamber, and a heating device as described above is arranged below the gas shower head.

In other respects, the present invention also provides a method for processing a substrate using the chemical vapor deposition equipment as described above, which is characterized in that it includes: using a gas shower head to uniformly inject the reaction gas from the reaction gas source into the reaction chamber to realize the substrate processing, the edge purge gas passes into the edge of the substrate to be processed through the through hole in each of the gas plugs, the buffer chamber, the horizontal gap and the inclined gap; adjust the through hole The hole diameter is used to adjust the flow rate and direction of the airflow to improve the uniformity of sweeping the edge of the substrate.

The present invention has at least one of the following advantages:

A heating device for chemical vapor deposition equipment provided by the present invention, the heating device passes edge purge gas into the buffer cavity through the through hole in the gas plug provided, and the buffer cavity in the buffer cavity The edge purge gas sweeps the edge of the substrate through the horizontal gap and the inclined gap in order to prevent the deposition gas from depositing on the rear side of the substrate edge, and then solve the problem that the substrate is easily broken when taking it out due to the substrate sticking to the heating device. Cracking issues, as well as improving chamber performance, maintaining a clean environment for extended periods of time, and preventing reactive gases from reaching the backside of the wafer—and contaminating it.

The setting of the horizontal gap slows down the flow rate of the airflow leading to the edge of the substrate, and by changing the length and/or width of the horizontal gap, the required edge purging effect or requirement can be achieved. When the purge gas is unevenly distributed along the edge of the substrate due to installation tolerances between different components, because the horizontal gap is directly located between the inclined gap and the buffer cavity, the thickness of the gap is not affected by the horizontal displacement of different components. The gas flow rate from the horizontal gap can be maintained uniformly distributed along the edge of the substrate.

The setting of the buffer chamber is used to temporarily store the purge gas from the through hole, so that the velocity and flow rate of the gas flow through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

The setting of the inclined gap can ensure the integrity of the horizontal gap.

The wall of the through hole in the air plug provided by the present invention is irregular, so that the air flow leading to the buffer cavity can be changed by adjusting the diameter and/or shape of the through hole of the air plug. direction and gas flow rate, thereby further improving the uniformity of the deposited film at the edge of the substrate.

The process edge purge test is performed by adjusting the diameter and/or shape of the through hole of the air plug, which has low cost and short test time, and effectively improves the efficiency of the process edge purge test.

Description of drawings

Fig. 1 is a schematic cross-sectional view of the main structure of a heating device provided by an embodiment of the present invention;

2 is a schematic cross-sectional view of the main structure of a heating device provided by another embodiment of the present invention;

3 is a schematic cross-sectional view of the main structure of a heating device provided by another embodiment of the present invention;

Fig. 4 is the mass flow distribution curve of the purge gas during the horizontal gap test provided by an embodiment of the present invention;

Fig. 5 is a mass flow distribution curve of the purge gas during the horizontal gap test provided by another embodiment of the present invention.

Detailed ways

The heating device, chemical vapor deposition equipment and purging method proposed by the present invention will be further described in detail in conjunction with specific embodiments below. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and all use imprecise scales, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In order to make the objects, features and advantages of the present invention more comprehensible, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. condition, so it has no technical substantive meaning, and any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of the present invention without affecting the effect and purpose of the present invention. within the scope covered by the disclosed technical content.

Embodiment one

As shown in FIG. 1 , this embodiment provides a heating device for chemical vapor deposition equipment, including: a heater base 100 , and the heater base 100 can be used to carry a substrate to be processed. The fixed edge ring 101 is sleeved on the heater base 100 , and a buffer cavity 111 and a gap are located between the fixed edge ring 101 and the heater base 100 . The gap includes a horizontal gap 1010 and an inclined gap 1011, one end of the horizontal gap 1010 communicates with the buffer chamber 111, and the other end communicates with the inclined gap 1011, and one end of the inclined gap 1011 opens toward the substrate , that is, one end of the inclined gap 1011 opens toward the edge of the upper surface of the heater base 100 .

A plurality of hollow air plugs 200 are disposed in the heater base 100 at intervals around the periphery of the heater base 100 . Each of the air plugs 200 is provided with a through hole 2010 for ventilating into the buffer cavity 111 .

The edge of the heater base 100 is provided with several layers of steps extending radially inward; the fixed edge ring 101 is located on several layers of the steps, and the number of layers of the steps is close to the heater base 100 The buffer cavity 111 is formed by the surface of the first step of the bottom surface and the inner surface of the fixed edge ring 101 . The gap is formed between the surfaces of the other steps and the inner surface of the fixed edge ring 101 .

In this embodiment, the steps include three layers, which are denoted as the first step 10, the second step 11 and the third step 12; The vertical side of the step 11 can form a buffer cavity 111 when the fixed edge ring 101 is sleeved on the heater base 100, and each of the air plugs 200 is located below the first step 10, and the first The upper surface of the step 10 is a first step surface, and the air plug 200 communicates with the buffer chamber 111 through the first step surface of the first step 10; the upper surface of the second step 11 is a second step surface , the second step surface and the inner surface of the fixed edge ring 101 form the horizontal gap 1010; the third step 12 has an inclined side, and the side surface and the inner surface of the fixed edge ring 101 form the inclined Clearance 1011.

In this embodiment, each of the air plugs 200 is arranged obliquely inside the heater base 100 , and the end of the air plugs 200 close to the first stepped surface is away from the central axis of the heater base 100 ; An end of the air plug 200 away from the first stepped surface is close to the central axis of the heater base 100 . This placement is for the convenience of preparing the air plug 200 in the first step 10 of the heater base 100 . Due to the differences in the arrangement of other components at the bottom of the heater base 100 , setting the plug in this way will more flexibly meet the input requirements of the purge gas. A seal 300 is provided at one port of each air plug 200 near the bottom of the first step 10 . In other embodiments, the air plug 200 can also be arranged vertically.

In this embodiment, the buffer cavity 111 is in the shape of a ring as a whole, the horizontal gap 1010 is in the shape of a ring as a whole; the inclined gap 1011 is in the shape of a ring as a whole, so as to ensure the Perform uniform gas purging, but the present invention is not limited thereto. The buffer cavity 111 , the horizontal gap 1010 and the inclined gap 1011 can be customized according to the shape of the heater base 100 .

In this embodiment, the horizontal width of the horizontal gap 1010 ranges from 1.5 mm to 5 mm. The vertical thickness of the horizontal gap 1010 is 0.2mm-1mm. The width of the horizontal gap 1010 is the same as or different from the width of the inclined gap 1011 .

It can be seen that, in this embodiment, the thickness of the horizontal gap 1010 will not change due to the relative movement between the fixed side ring 101 and the heater base 100 in the horizontal direction, and this relative movement cannot be avoided during assembly. The thickness of the gap 1010 does not change, and the flow rate of the purge gas flowing out of the buffer chamber 111 will be basically stable after passing through the horizontal gap 1010. Even if the thickness of the inclined gap 1011 changes, the distribution of the purge gas at the edge of the substrate will not be affected. Because the pressure difference from the buffer chamber 111 to the horizontal gap 1010 is relatively large, and the pressure difference from the horizontal gap 1010 to the inclined gap 1011 is small and negligible, the setting of the horizontal gap 1010 unifies the airflow leading to the edge of the substrate flow rate, and by changing the length and/or width of the horizontal gap 1010, the required edge blowing effect or requirement can be achieved.

The setting of the buffer chamber 111 is used to temporarily store the purge gas from the through hole 2010, so that the flow rate and flow rate of the gas passing through the horizontal gap 1010 and the inclined gap 1011 can be kept stable at the edge of the substrate. The setting of the inclined gap 1011 can ensure the integrity of the horizontal gap 1010 and adjust the blowing direction of the purge gas at the edge of the substrate.

In this embodiment, each air plug 200 is made of aluminum material. The outer surface of each of the air plugs 200 is cylindrical, and the walls of the through holes 2010 in each of the air plugs 200 are irregular. Specifically, in this embodiment, the through holes 2010 in each of the air plugs 200 are generally cylindrical. Each of the through holes 2010 is coaxially arranged with the corresponding air plug 200 . The gas plug 200 is movably connected with the heater base 100 , and the gas plug 200 having a different shape of the through hole 2010 can be replaced with a gas plug 200 having a different shape of the through hole 2010 to obtain a proper distribution of the purge gas.

This embodiment further includes: a movable side ring 102 sleeved on the fixed side ring 101 , the inner diameter of the movable side ring 102 is smaller than the inner diameter of the fixed side ring 101 . One of the functions of the movable ring 102 is to facilitate the assembly of the heating device, and the second function is to make the movable ring 102 assemble When it reaches the fixed edge ring 101, the inner diameter of the movable edge ring 102 can form an edge, which is located above the inclined gap 1011, so that the edge purge gas flowing out from the inclined gap 1011 will move toward the substrate along the horizontal direction. The edge of the blower will not be blown upward, which improves the blowing effect and improves the cleanliness of the substrate surface.

A heating device for chemical vapor deposition equipment provided in this embodiment, the heating device passes edge purge gas into the buffer chamber 111 through the through hole 2010 in the gas plug 200 provided, and the The edge purge gas in the buffer chamber 111 sequentially passes through the horizontal gap 1010 and the inclined gap 1011 to purge the edge of the substrate to prevent the deposition gas from depositing on the rear side of the substrate edge, thereby solving the problem of the substrate sticking to the heating device. This leads to the problem of easy chipping when picking up the wafer, as well as improving chamber performance, extending the time to maintain a clean environment, and preventing reactive gases from contacting the wafer backside and contamination.

Embodiment two

As shown in FIG. 2 , the difference between the present embodiment and the first embodiment is that the shape of the through hole 2011 in each air plug 200 provided by the present embodiment is different from the shape of the through hole provided by the first embodiment.

In this embodiment, the through hole 2011 has a V-shaped bent shape as a whole, and specifically includes a first bent section and a second bent section connected to each other, and the first bent section and the second bent section The sections are respectively cylindrical, the first bent section is arranged coaxially with the air plug 200, one end of the second bent section is connected to the first bent section, and the other end is close to the air plug 200 The central axis of the central axis is set, so that the direction of the gas flow into the buffer chamber 111 can be changed, and then the flow rate of the purge gas at the edge of the substrate can be changed, so as to facilitate the adjustment of the purge at the edge of the corresponding substrate. Effect.

Embodiment Three

As shown in FIG. 3 , the difference between this embodiment and Embodiment 1 is that the installation position of each air plug 200 provided in this embodiment is different from the installation position of the air plug in Embodiment 1.

In this embodiment, the air plug 200 is vertically arranged inside the edge of the heater base 100 ; specifically, it is located below the second step 11 and is arranged through the first step 10 .

The through hole 2011 in each of the air plugs 200 is cylindrical and coaxially arranged with the air plug 200, and the end port 2012 of the through hole 2011 communicated with the buffer cavity 111 is narrowed, which is smaller than The setting of the thin port 2012 can first block the purge gas rushing in from below to reduce the turbulent flow in the buffer chamber, that is, to ensure the flow stability of the edge purge gas in the buffer chamber 111, thereby improving the flow rate of the purge gas to the buffer chamber 111. The uniformity of purging at the edge of the substrate.

Fig. 4 shows the mass flow distribution curve of the purge gas during the horizontal gap test provided by an embodiment of the present invention. The abscissa in the figure represents the position coordinates of different angles on the edge of the substrate, and the vertical axis represents the mass flow of the purge gas. Among them, the width of the horizontal gap is 1.5mm, and the thickness is 0.2mm. The inhomogeneity is defined as the difference between the maximum mass flow rate and the minimum mass flow rate at different positions and the percentage of the minimum value. It can be seen that, within the range of 0 to 30 on the substrate, the maximum value of the mass flow rate of the purge gas is 0.345, the minimum value is 0.339, and the non-uniformity is 2.1%. The reason for the fluctuation of the curve is that a maximum is reached near the airlock and a minimum is reached between two airlocks. It can be seen that, using the technical solution of the present invention, the non-uniformity can be significantly reduced.

As shown in Figure 5, the mass flow distribution curve of the purge gas during the horizontal gap test provided by another embodiment of the present invention, wherein the horizontal gap is selected to have a width of 5mm and a thickness of 1mm, and within the range of 0 to 30 on the substrate, the purge gas The maximum value of the mass flow rate is 0.3447, the minimum value is 0.3405, and the non-uniformity is 1.2%. It can be seen that the distribution uniformity of the purge gas at the edge of the substrate can be adjusted by adjusting the width and thickness of the horizontal gap.

It can be seen that the uniformity of edge purging can be adjusted by adjusting the diameter of the through hole and/or the width of the horizontal gap.

In another aspect, this embodiment also provides a chemical vapor deposition equipment, including: a reaction chamber; a gas shower head is arranged at the top of the reaction chamber, and a heating device as described above is arranged below the gas shower head .

In other respects, this embodiment also provides a method for processing a substrate using the chemical vapor deposition equipment as described above, including: using a gas shower head to uniformly inject the reaction gas from the reaction gas source into the reaction chamber to realize the processing of the substrate For processing, the edge purge gas passes into the edge of the substrate to be processed through the through hole in each of the gas locks, the buffer chamber, the horizontal gap and the inclined gap; adjust the aperture of the through hole to The flow rate and direction of the airflow are adjusted to improve the uniformity of sweeping the edge of the substrate.

In summary, this embodiment provides a heating device for chemical vapor deposition equipment, the heating device passes the edge purge gas into the buffer chamber through the through hole in the provided gas plug, The edge purge gas in the buffer chamber sweeps the edge of the substrate sequentially through the horizontal gap and the inclined gap to prevent the deposition gas from depositing on the rear side of the edge of the substrate, thereby solving the problem of the substrate sticking to the heating device. The problem of easy chipping when picking up wafers, as well as improving chamber performance, extending the time to maintain a clean environment, and preventing reactive gases from contacting the back of the wafer and contamination.

The setting of the horizontal gap slows down the flow rate of the airflow leading to the edge of the substrate, and by changing the length and/or width of the horizontal gap, the required edge purging effect or requirement can be achieved. When the purge gas is unevenly distributed along the edge of the substrate due to installation tolerances between different components, because the horizontal gap is directly located between the inclined gap and the buffer cavity, the thickness of the gap is not affected by the horizontal displacement of different components. The gas flow rate from the horizontal gap can be maintained uniformly distributed along the edge of the substrate.

The setting of the buffer chamber is used to temporarily store the purge gas from the through hole, so that the velocity and flow rate of the gas flow through the horizontal gap and the inclined gap can be kept stable at the edge of the substrate.

The setting of the inclined gap ensures the integrity of the horizontal gap.

The wall of the through hole in the air plug provided in this embodiment is irregular, so when adjusting the diameter and/or shape of the through hole of the air plug, the flow leading to the buffer cavity can be changed. The gas flow direction and gas flow velocity thereby further improve the uniformity of the deposited film at the edge of the substrate.

The process edge purge test is performed by adjusting the diameter and/or shape of the through hole of the air plug, which has low cost and short test time, and effectively improves the efficiency of the process edge purge test.

It should be noted that, in this document, the terms "comprising", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.

In describing the present invention, it is to be understood that the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", The orientations or positional relationships indicated by "inner", "outer", "axial", "radial", and "circumferential" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying Describes, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and operate in a specific orientation, and therefore should not be construed as limiting the invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of the present invention, unless otherwise clearly specified and limited, the terms "installation", "connection", "connection" and "fixation" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction relationship between two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "under" and "under" the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the above disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

Claims (17)

1. A heating device for chemical vapor deposition equipment, characterized in that, comprising: A heater base, which can be used to carry a substrate to be processed on the heater base; a fixed side ring, which is sleeved on the heater base, a buffer cavity and a gap are located between the fixed side ring and the heater base; The gap includes a horizontal gap and an inclined gap, one end of the horizontal gap communicates with the buffer chamber, and the other end communicates with the inclined gap, and one end of the inclined gap opens toward the edge of the substrate; a plurality of hollow air plugs, which are circumferentially spaced around the edge of the heater base and arranged in the heater base; Each of the air plugs is provided with a through hole for ventilating into the buffer cavity. 2. The heating device according to claim 1, characterized in that, the edge of the heater base is provided with several layers of steps extending radially inward; The fixed side ring is located on several layers of the steps, and the surface of the first step close to the bottom surface of the heater base among the several layers of steps forms the buffer cavity with the inner surface of the fixed side ring; The gap is formed between the surfaces of the other steps and the inner surface of the fixed edge ring. 3. The heating device according to claim 2, wherein the width of the horizontal gap and the width of the inclined gap are the same or different. 4. The heating device according to claim 3, wherein the steps comprise three layers, which are denoted as a first step, a second step and a third step; Each of the air plugs is located below the first step, and the air plug communicates with the buffer cavity through the first step surface of the first step; The second step surface of the second step and the inner surface of the fixed side ring form the horizontal gap; The side surface of the third step and the inner surface of the fixed edge ring form the inclined gap. 5. The heating device according to claim 1, wherein the buffer cavity is in the shape of a ring. 6. The heating device according to claim 1, wherein the horizontal gap is in the shape of a ring. 7. The heating device according to claim 1, characterized in that, the inclined gap is circular. 8. The heating device according to claim 1, characterized in that, the horizontal width of the horizontal gap ranges from 1.5 mm to 5 mm. 9. The heating device according to claim 8, wherein the vertical thickness of the horizontal gap ranges from 0.2 mm to 1 mm. 10 . The heating device according to claim 1 , wherein the walls of the through holes in each of the air plugs are irregular. 11 . 11. The heating device according to claim 1, characterized in that, the through holes in each of the air plugs are cylindrical. 12. The heating device according to claim 4, wherein each of the air plugs is arranged obliquely in the heater base, and the end of the air plugs close to the first stepped surface is away from the heater the central axis of the base; An end of the air plug away from the first stepped surface is close to the central axis of the heater base. 13. The heating device according to claim 1, wherein the outer surface of each said air plug is cylindrical. 14. The heating device according to claim 1, wherein each of the air plugs is made of aluminum material. 15. The heating device according to claim 1, further comprising: a movable side ring, which is sleeved on the fixed side ring, and the inner diameter of the movable side ring is smaller than the inner diameter of the fixed side ring . 16. A chemical vapor deposition equipment, characterized in that it comprises: a reaction chamber; a gas shower head is arranged on the top of the reaction chamber, and a gas shower head is arranged below the gas shower head, as in any one of claims 1 to 15. The heating device. 17. A method for processing a substrate using a chemical vapor deposition apparatus as claimed in claim 16, comprising: A gas shower head is used to evenly inject the reaction gas from the reaction gas source into the reaction chamber to realize the processing of the substrate, and the edge purge gas passes through the through hole in each of the gas plugs, the buffer chamber, and the horizontal gap and the sloped gap opens to the edge of the substrate to be processed; The diameter of the through hole is adjusted to adjust the flow rate and the direction of the airflow to improve the uniformity of sweeping the edge of the substrate.

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