CN116318084A - Differential hysteresis comparison circuit and method - Google Patents
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Abstract
Description
技术领域technical field
本公开涉及集成电路技术领域,尤其涉及一种差分迟滞比较电路及方法。The present disclosure relates to the technical field of integrated circuits, in particular to a differential hysteresis comparison circuit and method.
背景技术Background technique
在信号产生、传输过程中,由于电源电压的噪声,以及环境噪声的干扰,会使信号出现噪声,噪声的存在影响了信号的准确性,会导致出现误码等问题。带有噪声的信号输入到比较器中时,尤其是当信号在比较器的阈值电压附近的噪声振幅较大的情况下,比较器的输出便会出现多次翻转,会带来误码,影响信号的准确性,虽然传统迟滞比较器可以在一定程度上降低误码率,但对差分信号的迟滞比较难以实现。In the process of signal generation and transmission, due to the noise of the power supply voltage and the interference of environmental noise, the signal will appear noise. The existence of noise will affect the accuracy of the signal and cause problems such as bit errors. When a signal with noise is input into the comparator, especially when the noise amplitude of the signal near the threshold voltage of the comparator is large, the output of the comparator will flip multiple times, which will cause bit errors and affect The accuracy of the signal, although the traditional hysteresis comparator can reduce the bit error rate to a certain extent, but it is difficult to realize the hysteresis of the differential signal.
发明内容Contents of the invention
鉴于上述问题,本发明提供了一种差分迟滞比较电路,以解决上述技术问题。In view of the above problems, the present invention provides a differential hysteresis comparator circuit to solve the above technical problems.
本公开的一个方面提供了一种差分迟滞比较电路,包括:差分输入电路,用于输入第一差分信号和第二差分信号;正反馈迟滞电路,与所述差分输入电路连接,用于比较所述第一差分信号和第二差分信号,得到差分比较结果,当所述差分比较结果大于第一阈值电压时,输出第一比较结果信号,当所述差分比较结果小于第二阈值电压时,输出第二比较信号,所述第一阈值电压大于第二阈值电压;输出级电路,与所述正反馈迟滞电路连接,用于将所述第一比较结果信号或所述第二比较结果信号转换为单端信号输出。One aspect of the present disclosure provides a differential hysteresis comparison circuit, including: a differential input circuit for inputting a first differential signal and a second differential signal; a positive feedback hysteresis circuit connected to the differential input circuit for comparing the The first differential signal and the second differential signal are used to obtain a differential comparison result, when the differential comparison result is greater than the first threshold voltage, the first comparison result signal is output, and when the differential comparison result is less than the second threshold voltage, the output For the second comparison signal, the first threshold voltage is greater than the second threshold voltage; the output stage circuit is connected to the positive feedback hysteresis circuit, and is used to convert the first comparison result signal or the second comparison result signal into Single-ended signal output.
可选地,差分输入电路包括:第一差分输入电路,包括第一晶体管M1和第二晶体管M2,第一晶体管M1的栅极接入第一电压信号,所述第二晶体管M2的栅极接入第二电压信号,所述第一电压信号和所述第二电压信号构成第一差分信号;第二差分输入电路,包括第三晶体管M3和第四晶体管M4,第三晶体管M3的栅极接入第三电压信号,所述第四晶体管M4的栅极接入第四电压信号,所述第三电压信号和所述第四电压信号构成第二差分信号;所述第一晶体管M1、所述第二晶体管M2的漏极分别接入所述正反馈迟滞电路,向所述正反馈迟滞电路输入所述第一差分信号;所述第三晶体管M3和所述第四晶体管M4的漏极分别接入所述正反馈迟滞电路,向所述正反馈迟滞电路输入所述第二差分信号。Optionally, the differential input circuit includes: a first differential input circuit, including a first transistor M1 and a second transistor M2, the gate of the first transistor M1 is connected to the first voltage signal, and the gate of the second transistor M2 is connected to Inputting a second voltage signal, the first voltage signal and the second voltage signal form a first differential signal; the second differential input circuit includes a third transistor M3 and a fourth transistor M4, the gate of the third transistor M3 is connected to input a third voltage signal, the gate of the fourth transistor M4 is connected to a fourth voltage signal, and the third voltage signal and the fourth voltage signal form a second differential signal; the first transistor M1, the The drains of the second transistor M2 are respectively connected to the positive feedback hysteresis circuit, and the first differential signal is input to the positive feedback hysteresis circuit; the drains of the third transistor M3 and the fourth transistor M4 are respectively connected to input into the positive feedback hysteresis circuit, and input the second differential signal into the positive feedback hysteresis circuit.
可选地,所述正反馈迟滞电路包括:第五晶体管M5,其栅极与漏极相连构成二极管连接,其漏极连接所述第一晶体管M1的漏极和所述第三晶体管M3的漏极;第六晶体管M6,其栅极与所述第五晶体管M5的栅极相连且连接第一输出端,其漏极连接所述第二晶体管M2的漏极和所述第四晶体管M4的漏极;第七晶体管M7,其栅极与第八晶体管M8的栅极相连且连接第二输出端,其漏极连接所述第三晶体管M3的漏极和所述第一晶体管M1的漏极;第八晶体管M8,其栅极与漏极相连构成二极管连接,其漏极连接所述第四晶体管M4的漏极和第二晶体管M2的漏极;第九晶体管M9,其漏极与所述第一晶体管M1、所述第二晶体管M2、所述第三晶体管M3和所述第四晶体管M4的源极连接,其源极接地,其栅极输入偏置电压Vbias;所述第五晶体管M5、所述第六晶体管M6、所述第七晶体管M7和所述第八晶体管M8的源极输入工作电压VDD,所述第五晶体管M5与所述第七晶体管M7的漏极连接,所述第六晶体管M6和所述第八晶体管M8的漏极相连。Optionally, the positive feedback hysteresis circuit includes: a fifth transistor M5, the gate of which is connected to the drain to form a diode connection, and the drain of which is connected to the drain of the first transistor M1 and the drain of the third transistor M3 the sixth transistor M6, its gate is connected to the gate of the fifth transistor M5 and connected to the first output terminal, and its drain is connected to the drain of the second transistor M2 and the drain of the fourth transistor M4 pole; the seventh transistor M7, the gate of which is connected to the gate of the eighth transistor M8 and connected to the second output terminal, and the drain of which is connected to the drain of the third transistor M3 and the drain of the first transistor M1; The eighth transistor M8, whose gate is connected to the drain to form a diode connection, and whose drain is connected to the drain of the fourth transistor M4 and the drain of the second transistor M2; the ninth transistor M9, whose drain is connected to the second transistor M2 The sources of a transistor M1, the second transistor M2, the third transistor M3, and the fourth transistor M4 are connected, their sources are grounded, and their gates input a bias voltage Vbias; the fifth transistor M5, The sources of the sixth transistor M6, the seventh transistor M7 and the eighth transistor M8 input an operating voltage V DD , the fifth transistor M5 is connected to the drain of the seventh transistor M7, and the sixth transistor M5 is connected to the drain of the seventh transistor M7. The sixth transistor M6 is connected to the drain of the eighth transistor M8.
可选地,所述阈值电压VTH的电压值为所述第一阈值电压或第二阈值电压;其中,当所述差分比较结果大于第一阈值电压时,所述阈值电压VTH变为第二阈值电压;当所述差分比较结果小于第二阈值电压时,所述阈值电压变为第二阈值电压。Optionally, the voltage value of the threshold voltage V TH is the first threshold voltage or the second threshold voltage; wherein, when the difference comparison result is greater than the first threshold voltage, the threshold voltage V TH becomes the second threshold voltage Two threshold voltages; when the difference comparison result is less than the second threshold voltage, the threshold voltage becomes the second threshold voltage.
可选地,所述输出级电路包括:第十晶体管M10,其漏极连接单端输出端,其源极接地,其栅极与第十一晶体管M11的栅极连接;第十一晶体管M11,其的栅极与漏极相连构成二极管连接,其源极接地;第十二晶体管M12,其栅极连接所述第一输出端,其源极输入工作电压VDD,其漏极连接所述单端输出端;第十三晶体管M13,其栅极连接所述第二输出端,其源极输入工作电压VDD,其漏极连接所述第十一晶体管M11的漏极。Optionally, the output stage circuit includes: a tenth transistor M10, the drain of which is connected to the single-ended output terminal, the source of which is grounded, and the gate of which is connected to the gate of the eleventh transistor M11; the eleventh transistor M11, Its gate is connected to the drain to form a diode connection, and its source is grounded; the gate of the twelfth transistor M12 is connected to the first output terminal, its source is input with the operating voltage V DD , and its drain is connected to the single terminal output terminal; the thirteenth transistor M13, the gate of which is connected to the second output terminal, the source of which is input with the working voltage V DD , and the drain of which is connected to the drain of the eleventh transistor M11.
可选地,所述第一晶体管M1、所述第二晶体管M2、所述第三晶体管M3、所述第四晶体管M4、所述第九晶体管M9、所述第十晶体管M10和所述第十一晶体管M11为NMOS管;所述第五晶体管M5、所述第六晶体管M6、所述第七晶体管M7、所述第八晶体管M8、所述第十二晶体管M12和所述第十三晶体管M13为PMOS管。Optionally, the first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the ninth transistor M9, the tenth transistor M10 and the tenth A transistor M11 is an NMOS transistor; the fifth transistor M5, the sixth transistor M6, the seventh transistor M7, the eighth transistor M8, the twelfth transistor M12 and the thirteenth transistor M13 For the PMOS tube.
本公开另一方面提供了一种差分迟滞比较方法,应用于如第一方面所述的差分迟滞比较电路,所述方法包括:利用差分输入电路输入第一差分信号和第二差分信号;利用正反馈迟滞电路比较所述第一差分信号和第二差分信号,得到差分比较结果,当所述差分比较结果大于第一阈值电压时,输出第一比较结果信号,当所述差分比较结果小于第二阈值电压时,输出第二比较信号,所述第一阈值电压大于第二阈值电压;利用输出级电路将所述第一比较结果信号或所述第二比较结果信号转换为单端信号输出。Another aspect of the present disclosure provides a differential hysteresis comparison method, which is applied to the differential hysteresis comparison circuit described in the first aspect, and the method includes: using a differential input circuit to input a first differential signal and a second differential signal; using a positive The feedback hysteresis circuit compares the first differential signal with the second differential signal to obtain a differential comparison result, and outputs the first comparison result signal when the differential comparison result is greater than the first threshold voltage, and outputs the first comparison result signal when the differential comparison result is less than the second When the threshold voltage is low, output a second comparison signal, the first threshold voltage is greater than the second threshold voltage; use the output stage circuit to convert the first comparison result signal or the second comparison result signal into a single-ended signal output.
可选地,包括:当所述差分比较结果大于第一阈值电压时,将所述正反馈迟滞电路的阈值电压VTH变为第二阈值电压;当所述差分比较结果小于第二阈值电压时,将所述正反馈迟滞电路的阈值电压VTH变为第一阈值电压。Optionally, including: when the differential comparison result is greater than the first threshold voltage, changing the threshold voltage V TH of the positive feedback hysteresis circuit to a second threshold voltage; when the differential comparison result is less than the second threshold voltage , changing the threshold voltage V TH of the positive feedback hysteresis circuit to a first threshold voltage.
可选地,所述第一阈值电压为:Optionally, the first threshold voltage is:
所述第二阈值电压为:The second threshold voltage is:
其中,n=(W/L)6/(W/L)5=(W/L)8/(W/L)7,β=μ0Cox(W/L)1,2,3,4,μ0Cox为第一晶体管M1、第二晶体管M2、第三晶体管M3和第四晶体管M4的器件模型参数,W/L为第五晶体管M5、第六晶体管M6、第七晶体管M7和第八晶体管M8的器件宽长比,I9表示第九晶体管M9的电流。Wherein, n=(W/L) 6 /(W/L) 5 =(W/L) 8 /(W/L) 7 , β=μ 0 C ox (W/L) 1, 2, 3 , 4 , μ 0 C ox is the device model parameters of the first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4, W/L is the fifth transistor M5, the sixth transistor M6, the seventh transistor M7 and the fourth transistor M4 The device width-to-length ratio of the eight transistor M8, I 9 represents the current of the ninth transistor M9.
在本公开实施例采用的上述至少一个技术方案能够达到以下有益效果:The above at least one technical solution adopted in the embodiments of the present disclosure can achieve the following beneficial effects:
本公开实施例提供了一种差分迟滞比较电路。通过差分输入电路做差可以减小输入信号中的共模噪声的影响,当迟滞比较电路的输入信号由低到高上升至大于第一阈值电压VT +时,迟滞比较电路的单端输出端输出为高电平,由于迟滞比较电路的第一阈值电压与第二阈值电压不同,即使输入信号在第一阈值电压附近的噪声振幅较大,只要未低于第二阈值电压,输出便不会发正翻转,保证信号的准确性。同理,当迟滞比较电路的输入信号由高到低下降至小于第一阈值电压VT -时,单端输出端输出为低电平,而且由于迟滞特性,保证信号的准确性,提高了电路的抗干扰能力。An embodiment of the present disclosure provides a differential hysteresis comparator circuit. The influence of the common mode noise in the input signal can be reduced by making a difference through the differential input circuit. When the input signal of the hysteresis comparison circuit rises from low to high and exceeds the first threshold voltage V T + , the single-ended output terminal of the hysteresis comparison circuit The output is high level, because the first threshold voltage of the hysteresis comparison circuit is different from the second threshold voltage, even if the noise amplitude of the input signal near the first threshold voltage is large, as long as it is not lower than the second threshold voltage, the output will not Send positive flip to ensure the accuracy of the signal. Similarly, when the input signal of the hysteresis comparator circuit drops from high to low to less than the first threshold voltage V T - , the output of the single-ended output terminal is a low level, and due to the hysteresis characteristic, the accuracy of the signal is guaranteed and the circuit is improved. anti-interference ability.
附图说明Description of drawings
为了更完整地理解本公开及其优势,现在将参考结合附图的以下描述,其中:For a more complete understanding of the present disclosure and its advantages, reference should now be made to the following description taken in conjunction with the accompanying drawings, in which:
图1示意性示出了本公开实施例提供的一种差分迟滞比较电路图;FIG. 1 schematically shows a differential hysteresis comparison circuit diagram provided by an embodiment of the present disclosure;
图2示意性示出了本公开实施例提供的一种迟滞比较电路的等效电路;FIG. 2 schematically shows an equivalent circuit of a hysteresis comparison circuit provided by an embodiment of the present disclosure;
图3示意性示出了本公开实施例提供的一种差分迟滞比较电路的信号波形图。FIG. 3 schematically shows a signal waveform diagram of a differential hysteresis comparison circuit provided by an embodiment of the present disclosure.
具体实施方式Detailed ways
以下,将参照附图来描述本公开的实施例。但是应该理解,这些描述只是示例性的,而并非要限制本公开的范围。在下面的详细描述中,为便于解释,阐述了许多具体的细节以提供对本公开实施例的全面理解。然而,明显地,一个或多个实施例在没有这些具体细节的情况下也可以被实施。此外,在以下说明中,省略了对公知结构和技术的描述,以避免不必要地混淆本公开的概念。Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.
在此使用的术语仅仅是为了描述具体实施例,而并非意在限制本公开。在此使用的术语“包括”、“包含”等表明了所述特征、步骤、操作和/或部件的存在,但是并不排除存在或添加一个或多个其他特征、步骤、操作或部件。The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting of the present disclosure. The terms "comprising", "comprising", etc. used herein indicate the presence of stated features, steps, operations and/or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.
在此使用的所有术语(包括技术和科学术语)具有本领域技术人员通常所理解的含义,除非另外定义。应注意,这里使用的术语应解释为具有与本说明书的上下文相一致的含义,而不应以理想化或过于刻板的方式来解释。All terms (including technical and scientific terms) used herein have the meaning commonly understood by one of ordinary skill in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted to have a meaning consistent with the context of this specification, and not be interpreted in an idealized or overly rigid manner.
本公开实施例提供的一种差分迟滞比较电路,包括差分输入电路、正反馈迟滞电路和输出级电路。其中,差分输入电路,用于输入第一差分信号和第二差分信号;正反馈迟滞电路,与所述差分输入电路连接,用于比较所述第一差分信号和第二差分信号,得到差分比较结果,当所述差分比较结果大于第一阈值电压时,输出第一比较结果信号,当所述差分比较结果小于第二阈值电压时,输出第二比较信号,所述第一阈值电压大于第二阈值电压;输出级电路,与所述正反馈迟滞电路连接,用于将所述第一比较结果信号或所述第二比较结果信号转换为单端信号输出。A differential hysteresis comparison circuit provided by an embodiment of the present disclosure includes a differential input circuit, a positive feedback hysteresis circuit and an output stage circuit. Wherein, the differential input circuit is used to input the first differential signal and the second differential signal; the positive feedback hysteresis circuit is connected to the differential input circuit and used to compare the first differential signal and the second differential signal to obtain a differential comparison As a result, when the differential comparison result is greater than the first threshold voltage, the first comparison result signal is output, and when the differential comparison result is less than the second threshold voltage, the second comparison signal is output, and the first threshold voltage is greater than the second threshold voltage. Threshold voltage; an output stage circuit, connected to the positive feedback hysteresis circuit, for converting the first comparison result signal or the second comparison result signal into a single-ended signal output.
图1示意性示出了本公开实施例提供的一种差分迟滞比较电路图。FIG. 1 schematically shows a differential hysteresis comparison circuit diagram provided by an embodiment of the present disclosure.
如图1所示,在本公开实施例中,差分输入电路包括第一差分输入电路和第二差分输入电路。第一差分输入电路包括第一晶体管M1和第二晶体管M2,第一晶体管M1的栅极接入第一电压信号Va,第二晶体管M2的栅极接入第二电压信号Vc,第一电压信号Va和第二电压信号Vc构成第一差分信号Va-Vc,并将第一差分信号Va-Vc转换为电流信号Ia-Ic;第二差分输入电路包括第三晶体管M3和第四晶体管M4,第三晶体管M3的栅极接入第三电压信号Vd,第四晶体管M4的栅极接入第四电压信号Vb,第三电压信号Vd和第四电压信号Vb构成第二差分信号Vd-Vb,并将电压信号Vd-Vb转换为电流信号Id-Ib;第一晶体管M1、第二晶体管M2的漏极接入正反馈迟滞电路,向正反馈迟滞电路输入第一差分信号Va-Vc,;第三晶体管M3和第四晶体管M4的漏极接入正反馈迟滞电路,向正反馈迟滞电路输入第二差分信号Vd-Vb。第一晶体管M1、第二晶体管M2、第三晶体管M3和第四晶体管M4为NMOS管。As shown in FIG. 1 , in the embodiment of the present disclosure, the differential input circuit includes a first differential input circuit and a second differential input circuit. The first differential input circuit includes a first transistor M1 and a second transistor M2, the gate of the first transistor M1 is connected to the first voltage signal V a , the gate of the second transistor M2 is connected to the second voltage signal V c , the first The voltage signal V a and the second voltage signal V c form a first differential signal V a -V c , and convert the first differential signal V a -V c into a current signal I a -I c ; the second differential input circuit includes a second differential signal The third transistor M3 and the fourth transistor M4, the gate of the third transistor M3 is connected to the third voltage signal V d , the gate of the fourth transistor M4 is connected to the fourth voltage signal V b , the third voltage signal V d and the fourth The voltage signal V b forms the second differential signal V d -V b , and converts the voltage signal V d -V b into a current signal I d -I b ; the drains of the first transistor M1 and the second transistor M2 are connected to positive feedback The hysteresis circuit inputs the first differential signal V a -V c to the positive feedback hysteresis circuit; the drains of the third transistor M3 and the fourth transistor M4 are connected to the positive feedback hysteresis circuit, and inputs the second differential signal V to the positive feedback hysteresis circuit d -V b . The first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4 are NMOS transistors.
在本公开实施例中,正反馈迟滞电路包括:第五晶体管M5,其栅极与漏极相连构成二极管连接,其漏极连接第一晶体管M1的漏极和第三晶体管M3的漏极;第六晶体管M6,其栅极与第五晶体管M5的栅极相连且连接第一输出端Vo1,其漏极连接第二晶体管M2的漏极和第四晶体管M4的漏极;第七晶体管M7,其栅极与第八晶体管M8的栅极相连且连接第二输出端Vo2,其漏极连接第三晶体管M3的漏极和第一晶体管M1的漏极;第八晶体管M8,其栅极与漏极相连构成二极管连接,其漏极连接第四晶体管M4的漏极和第二晶体管M2的漏极;第九晶体管M9,其漏极与第一晶体管M1、第二晶体管M2、第三晶体管M3和第四晶体管M4的源极连接,其源极接地,其栅极输入偏置电压Vbias;第五晶体管M5、第六晶体管M6、第七晶体管M7和第八晶体管M8的源极输入工作电压VDD,第五晶体管M5与第七晶体管M7的漏极连接,第六晶体管M6和第八晶体管M8的漏极相连。第九晶体管M9为NMOS管,第五晶体管M5、第六晶体管M6、第七晶体管M7和第八晶体管M8为PMOS管。In the embodiment of the present disclosure, the positive feedback hysteresis circuit includes: a fifth transistor M5, the gate of which is connected to the drain to form a diode connection, and the drain of which is connected to the drain of the first transistor M1 and the drain of the third transistor M3; Six transistors M6, the gate of which is connected to the gate of the fifth transistor M5 and connected to the first output terminal V o1 , the drain of which is connected to the drain of the second transistor M2 and the drain of the fourth transistor M4; the seventh transistor M7, Its gate is connected to the gate of the eighth transistor M8 and connected to the second output terminal V o2 , its drain is connected to the drain of the third transistor M3 and the drain of the first transistor M1; the gate of the eighth transistor M8 is connected to the gate of the eighth transistor M8 The drain is connected to form a diode connection, and its drain is connected to the drain of the fourth transistor M4 and the drain of the second transistor M2; the ninth transistor M9, its drain is connected to the first transistor M1, the second transistor M2, the third transistor M3 It is connected to the source of the fourth transistor M4, its source is grounded, and its gate inputs the bias voltage Vbias; the sources of the fifth transistor M5, the sixth transistor M6, the seventh transistor M7 and the eighth transistor M8 input the operating voltage V DD , the fifth transistor M5 is connected to the drain of the seventh transistor M7, and the drain of the sixth transistor M6 is connected to the eighth transistor M8. The ninth transistor M9 is an NMOS transistor, and the fifth transistor M5 , the sixth transistor M6 , the seventh transistor M7 and the eighth transistor M8 are PMOS transistors.
具体的,阈值电压VTH的电压值为第一阈值电压或第二阈值电压;其中,当差分比较结果大于第一阈值电压VT +时,阈值电压VTH变为第二阈值电压VT -;当差分比较结果小于第二阈值电压VT -时,阈值电压VTH变为第二阈值电压VT -,VT -<VT +。Specifically, the voltage value of the threshold voltage V TH is the first threshold voltage or the second threshold voltage; wherein, when the differential comparison result is greater than the first threshold voltage V T + , the threshold voltage V TH becomes the second threshold voltage V T - ; When the differential comparison result is less than the second threshold voltage V T - , the threshold voltage V TH becomes the second threshold voltage V T - , V T - <V T + .
在本实施例中,第一阈值电压为:In this embodiment, the first threshold voltage is:
第二阈值电压为:The second threshold voltage is:
其中,n=(W/L)6/(W/L)5=(W/L)8/(W/L)7,β=μ0Cox(W/L)1,2,3,4,μ0Cox为第一晶体管M1、第二晶体管M2、第三晶体管M3和第四晶体管M4的器件模型参数,W/L为第五晶体管M5、第六晶体管M6、第七晶体管M7和第八晶体管M8的器件宽长比,I9表示第九晶体管M9的电流。Wherein, n=(W/L) 6 /(W/L) 5 =(W/L) 8 /(W/L) 7 , β=μ 0 C ox (W/L) 1, 2, 3 , 4 , μ 0 C ox is the device model parameters of the first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4, W/L is the fifth transistor M5, the sixth transistor M6, the seventh transistor M7 and the fourth transistor M4 The device width-to-length ratio of the eight transistor M8, I 9 represents the current of the ninth transistor M9.
图2示意性示出了本公开实施例提供的一种迟滞比较电路的等效电路。FIG. 2 schematically shows an equivalent circuit of a hysteresis comparison circuit provided by an embodiment of the present disclosure.
如图2所示,流经M1管的电流为Ia,流经M2管的电流为Ic,流经M3管的电流为Id,流经M4管的电流为Ib,流经M5管的电流为I5,流经M6管的电流为I6,流经M7管的电流为I7,流经M8管的电流为I8,NMOS管M9为电路提供电流I9。第一差分输入电路与第二差分输入电路相叠加,实现(Va-Vc)+(Vd-Vb),即(Va-Vc)-(Vc-Vd),并将电压信号(Va-Vb)-(Vc-Vd)转化为(Ia-Ib)-(Ic-Id)。As shown in Figure 2, the current flowing through M1 tube is I a , the current flowing through M2 tube is I c , the current flowing through M3 tube is I d , the current flowing through M4 tube is I b , and the current flowing through M5 tube The current flowing through the M6 tube is I 5 , the current flowing through the M6 tube is I 6 , the current flowing through the M7 tube is I 7 , the current flowing through the M8 tube is I 8 , and the NMOS tube M9 provides the current I 9 for the circuit. The first differential input circuit and the second differential input circuit are superimposed to realize (V a -V c )+(V d -V b ), that is, (V a -V c )-(V c -V d ), and The voltage signal (V a -V b )-(V c -V d ) is transformed into (I a -I b )-(I c -I d ).
当(Va+Vd)-(Vc+Vb)的值即(Va-Vb)-(Vc-Vd)的值远远小于VT -时,M1、M3截止,M2、M4导通,于是M7和M8将导通,M5和M6将截止。I9全部流过M2、M4和M8,迟滞比较电路第二输出端Vo2输出低电平,第一输出端Vo1输出高电平。随着(Va-Vb)-(Vc-Vd)的值逐渐升高,I9的电流开始流经M1、M3,当M1的电流与M3的电流之和Ia+Id=I7时,(Va-Vb)-(Vc-Vd)的值到达阈值电压VT +。When the value of (V a +V d )-(V c +V b ), that is, the value of (V a -V b )-(V c -V d ) is much smaller than V T - , M1 and M3 are cut off, and M2 , M4 is turned on, so M7 and M8 will be turned on, and M5 and M6 will be cut off. I 9 all flow through M2, M4 and M8, the second output terminal V o2 of the hysteresis comparison circuit outputs a low level, and the first output terminal V o1 outputs a high level. As the value of (V a -V b )-(V c -V d ) increases gradually, the current of I 9 begins to flow through M1 and M3, when the sum of the current of M1 and the current of M3 I a +I d = When I 7 , the value of (V a -V b )-(V c -V d ) reaches the threshold voltage V T + .
当超过此状态,即(Va-Vb)-(Vc-Vd)>VT +时,电流I9大部分流过M1、M3和M5,迟滞比较电路第二输出端Vo2由低电平跳转到高电平,第一输出端Vo1由高电平跳转到低电平。此时迟滞比较电路的阈值电压切换为VT -,而VT -<VT +,即使(Va-Vb)-(Vc-Vd)下降到小于VT +,但只要大于VT -,输出便不会发生翻转。When this state is exceeded, that is, (V a -V b )-(V c -V d )>V T + , most of the current I 9 flows through M1, M3 and M5, and the second output terminal V o2 of the hysteresis comparator circuit is determined by A low level transitions to a high level, and the first output terminal V o1 transitions from a high level to a low level. At this time, the threshold voltage of the hysteresis comparison circuit is switched to V T - , and V T - <V T + , even if (V a -V b )-(V c -V d ) falls below V T + , as long as it is greater than V T - , the output will not flip.
同理,当(Va+Vd)-(Vc+Vb)的值即(Va-Vb)-(Vc-Vd)的值远远大于VT +,M2、M4截止,M1、M3导通,于是M5和M6将导通,M7和M8将截止。I9全部流过M1、M3和M5,迟滞比较电路第二输出端Vo2输出高电平,第一输出端Vo1输出低电平。随着(Va-Vb)-(Vc-Vd)的值逐渐降低,I9的电流开始流经M2、M4,当M2的电流与M4的电流之和Ic+Ib=I6时,(Va-Vb)-(Vc-Vd)的值到达阈值电压VT -。Similarly, when the value of (V a +V d )-(V c +V b ), that is, the value of (V a -V b )-(V c -V d ) is far greater than V T + , M2 and M4 are cut off , M1 and M3 are turned on, so M5 and M6 will be turned on, and M7 and M8 will be cut off. I 9 all flow through M1, M3 and M5, the second output terminal V o2 of the hysteresis comparator circuit outputs a high level, and the first output terminal V o1 outputs a low level. As the value of (V a -V b )-(V c -V d ) decreases gradually, the current of I 9 starts to flow through M2 and M4, when the sum of the current of M2 and the current of M4 is I c +I b =I 6 , the value of (V a -V b )-(V c -V d ) reaches the threshold voltage V T - .
当超过此状态,即(Va-Vb)-(Vc-Vd)<VT -时,电流I9大部分流过M2、M4和M8,迟滞比较电路第二输出端Vo2由高电平跳转到低电平,第一输出端Vo1由低电平跳转到高电平。此时迟滞比较电路的阈值电压切换为VT +,而即使(Va-Vb)-(Vc-Vd)上升到大于VT -,但只要小于VT +,输出便不会发生翻转。When this state is exceeded, that is, (V a -V b )-(V c -V d )<V T - , most of the current I 9 flows through M2, M4 and M8, and the second output terminal V o2 of the hysteresis comparison circuit is determined by A high level transitions to a low level, and the first output terminal V o1 transitions from a low level to a high level. At this time, the threshold voltage of the hysteresis comparison circuit is switched to V T + , and even if (V a -V b )-(V c -V d ) rises to be greater than V T - , but as long as it is less than V T + , the output will not occur Flip.
如图1所示,在本公开实施例中,输出级电路包括:第十晶体管M10,其漏极连接单端输出端Vout,其源极接地,其栅极与第十一晶体管M11的栅极连接;第十一晶体管M11,其的栅极与漏极相连构成二极管连接,其源极接地;第十二晶体管M12,其栅极连接第一输出端Vo1,其源极输入工作电压VDD,其漏极连接单端输出端Vout;第十三晶体管M13,其栅极连接第二输出端Vo2,其源极输入工作电压VDD,其漏极连接第十一晶体管M11的漏极。第十晶体管M10和第十一晶体管M11为NMOS管;第十二晶体管M12和第十三晶体管M13为PMOS管。As shown in FIG. 1 , in the embodiment of the present disclosure, the output stage circuit includes: a tenth transistor M10, the drain of which is connected to the single-ended output terminal V out , the source of which is grounded, and the gate of which is connected to the gate of the eleventh transistor M11 pole connection; the eleventh transistor M11, its gate is connected to the drain to form a diode connection, and its source is grounded; the twelfth transistor M12, its gate is connected to the first output terminal V o1 , and its source is input with the operating voltage V DD , its drain is connected to the single-ended output terminal V out ; the thirteenth transistor M13, its gate is connected to the second output terminal V o2 , its source is input with the operating voltage V DD , and its drain is connected to the drain of the eleventh transistor M11 pole. The tenth transistor M10 and the eleventh transistor M11 are NMOS transistors; the twelfth transistor M12 and the thirteenth transistor M13 are PMOS transistors.
在本实施例中,当迟滞比较电路的第二输出端Vo2为低电平、第一输出端Vo1为高电平时,M12截止,M13导通将VDD传输到M11的漏极、栅极和M10的栅极,使M10导通,将输出Vout拉低到VSS;当迟滞比较电路的第二输出端Vo2为高电平、第一输出端Vo1为低电平时,M13、M11和M10截止M12导通,将输出Vout拉低到VDD。输出级电路可以将迟滞比较电路的差分输出转换为单端输出,同时通过PMOS管M12和NMOS管M10组成推挽结构,以提供合理的输出电压摆幅。In this embodiment, when the second output terminal V o2 of the hysteresis comparison circuit is at a low level and the first output terminal V o1 is at a high level, M12 is turned off, and M13 is turned on to transmit VDD to the drain and gate of M11 and the gate of M10, so that M10 is turned on, and the output Vout is pulled down to VSS; when the second output terminal V o2 of the hysteresis comparison circuit is at a high level and the first output terminal V o1 is at a low level, M13, M11 and M10 cuts off and M12 is turned on, and the output V out is pulled down to VDD. The output stage circuit can convert the differential output of the hysteresis comparator circuit into a single-ended output, and at the same time form a push-pull structure through the PMOS transistor M12 and the NMOS transistor M10 to provide a reasonable output voltage swing.
根据本公开实施例提供的一种差分迟滞比较电路,通过两组差分输入对实现差分信号的比较,利用迟滞比较电路将差分信号进行迟滞比较,再通过输出级电路将差分结果转为单端信号并输出。减小了噪声对信号准确性的影响,能够对差分信号进行简单有效的迟滞比较。According to a differential hysteresis comparison circuit provided by an embodiment of the present disclosure, the comparison of differential signals is realized through two sets of differential input pairs, the hysteresis comparison circuit is used to perform hysteresis comparison on the differential signals, and then the differential result is converted into a single-ended signal through the output stage circuit and output. The influence of noise on signal accuracy is reduced, and simple and effective hysteresis comparison can be performed on differential signals.
本公开另一方面提供了一种差分迟滞比较方法,应用于如图1所示差分迟滞比较电路,该方法包括S1~S3。Another aspect of the present disclosure provides a differential hysteresis comparison method, which is applied to the differential hysteresis comparison circuit shown in FIG. 1 , and the method includes S1-S3.
S1,利用差分输入电路输入第一差分信号和第二差分信号。S1, using the differential input circuit to input the first differential signal and the second differential signal.
S2,利用正反馈迟滞电路比较第一差分信号Va-Vc和第二差分信号Vd-Vb,得到差分比较结果(Va-Vb)-(Vc-Vd)。当差分比较结果(Va-Vb)-(Vc-Vd)大于第一阈值电压VT +时,输出第一比较结果信号,即第一输出端Vo1输出低电平,第二输出端Vo2输出高电平,M13、M11和M10截止M12导通,输出Vout将输出VDD;当差分比较结果小于第二阈值电压VT -时,输出第二比较信号,即第一输出端Vo1输出高电平,第二输出端Vo2输出低电平,M12截止,M13导通将VDD传输到M11的漏极、栅极和M10的栅极,使M10导通,将输出Vout拉低到VSS。S2. Using the positive feedback hysteresis circuit to compare the first differential signal V a -V c and the second differential signal V d -V b to obtain a differential comparison result (V a -V b )-(V c -V d ). When the differential comparison result (V a -V b )-(V c -V d ) is greater than the first threshold voltage V T + , the first comparison result signal is output, that is, the first output terminal V o1 outputs a low level, and the second The output terminal V o2 outputs a high level, M13, M11 and M10 are cut off and M12 is turned on, and the output V out will output VDD; when the differential comparison result is less than the second threshold voltage V T - , the second comparison signal is output, that is, the first output Terminal V o1 outputs a high level, the second output terminal V o2 outputs a low level, M12 is turned off, M13 is turned on, and VDD is transmitted to the drain and gate of M11 and the gate of M10, so that M10 is turned on, and Vout is output Pulled low to VSS.
S3,利用输出级电路将第一比较结果信号或第二比较结果信号转换为单端信号输出。S3, using the output stage circuit to convert the first comparison result signal or the second comparison result signal into a single-ended signal for output.
在该方法中,当差分比较结果大于第一阈值电压VT +时,将正反馈迟滞电路的阈值电压VTH变为第二阈值电压VT -;当差分比较结果小于第二阈值电压VT -时,将正反馈迟滞电路的阈值电压VTH变为第一阈值电压VT +。In this method, when the differential comparison result is greater than the first threshold voltage V T + , the threshold voltage V TH of the positive feedback hysteresis circuit is changed to the second threshold voltage V T - ; when the differential comparison result is less than the second threshold voltage V T - , the threshold voltage V TH of the positive feedback hysteresis circuit is changed to the first threshold voltage V T + .
图3示意性示出了本公开实施例提供的一种差分迟滞比较电路的信号波形图。FIG. 3 schematically shows a signal waveform diagram of a differential hysteresis comparison circuit provided by an embodiment of the present disclosure.
如图3所示,本公开实施例提供的差分迟滞比较电路将迟滞比较电路的差分输出转换为单端输出,通过PMOS管M12和NMOS管M10组成推挽结构,以提供合理的输出电压摆幅。该方法减小了噪声对信号准确性的影响,能够对差分信号进行简单有效的迟滞比较。As shown in Figure 3, the differential hysteresis comparison circuit provided by the embodiment of the present disclosure converts the differential output of the hysteresis comparison circuit into a single-ended output, and forms a push-pull structure through the PMOS transistor M12 and the NMOS transistor M10 to provide a reasonable output voltage swing. . The method reduces the influence of noise on signal accuracy, and can perform simple and effective hysteresis comparison on differential signals.
本领域技术人员可以理解,本公开的各个实施例和/或权利要求中记载的特征可以进行多种组合或/或结合,即使这样的组合或结合没有明确记载于本公开中。特别地,在不脱离本公开精神和教导的情况下,本公开的各个实施例和/或权利要求中记载的特征可以进行多种组合和/或结合。所有这些组合和/或结合均落入本公开的范围。Those skilled in the art can understand that various combinations and/or combinations of the features described in the various embodiments and/or claims of the present disclosure can be made, even if such combinations or combinations are not explicitly recorded in the present disclosure. In particular, without departing from the spirit and teaching of the present disclosure, the various embodiments of the present disclosure and/or the features described in the claims can be combined and/or combined in various ways. All such combinations and/or combinations fall within the scope of the present disclosure.
尽管已经参照本公开的特定示例性实施例示出并描述了本公开,但是本领域技术人员应该理解,在不背离所附权利要求及其等同物限定的本公开的精神和范围的情况下,可以对本公开进行形式和细节上的多种改变。因此,本公开的范围不应该限于上述实施例,而是应该不仅由所附权利要求来进行确定,还由所附权利要求的等同物来进行限定。While the present disclosure has been shown and described with reference to certain exemplary embodiments thereto, it should be understood by those skilled in the art that other modifications may be made without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. Various changes in form and details have been made to this disclosure. Therefore, the scope of the present disclosure should not be limited to the above-described embodiments, but should be determined not only by the appended claims, but also by the equivalents of the appended claims.
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