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CN116299853A - Curved waveguide and curved waveguide design method based on genetic algorithm - Google Patents

Curved waveguide and curved waveguide design method based on genetic algorithm Download PDF

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CN116299853A
CN116299853A CN202310323938.6A CN202310323938A CN116299853A CN 116299853 A CN116299853 A CN 116299853A CN 202310323938 A CN202310323938 A CN 202310323938A CN 116299853 A CN116299853 A CN 116299853A
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窦同辉
岳嵩
侯煜
李曼
王然
石海燕
张昆鹏
刘宇欣
薛美
张紫辰
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Abstract

The invention provides a curved waveguide and a curved waveguide design method based on a genetic algorithm, which randomly generates an initial population, wherein the initial population comprises a plurality of individuals, genes of each individual are encoded according to parameters of two curves forming the curved waveguide, parameters of a plurality of curves dividing an etching area and etching parameters of the etching area, the geometric shape and layout of each individual are determined according to the genes of each individual in the population, a device model of each individual is obtained, and the transmissivity and crosstalk of each individual are obtained according to the device model of each individual; calculating the fitness of each individual according to the transmissivity and crosstalk of each individual, and finding out the individual with the highest fitness in the population as the optimal individual; judging whether the iteration termination condition is met, if so, outputting an optimal individual, ending the iteration, if not, updating the iteration times, generating a next generation population, and repeating the operation until the optimal individual is output. The invention improves the design efficiency of the curved waveguide.

Description

弯曲波导和基于遗传算法的弯曲波导设计方法Curved waveguide and design method of curved waveguide based on genetic algorithm

技术领域technical field

本发明涉及弯曲波导技术领域,尤其涉及一种弯曲波导和基于遗传算法的弯曲波导设计方法。The invention relates to the technical field of curved waveguides, in particular to a curved waveguide and a genetic algorithm-based design method for the curved waveguide.

背景技术Background technique

弯曲波导主要应用于片上光子/光电子集成,以及更近一步的光通信,光计算领域。为了实现片上光子集成,必然要考虑波导的布线问题,为完成任意布线,则必须需要弯曲波导。但是,当光通过弯曲波导时,由于弯曲导致的波导曲率变化,会导致模式失配与畸变,会出现与输入模式不同的杂散模式,造成损耗与串扰。特别是在片上光子集成时,多个弯曲波导的损耗与串扰叠加,将会超出实际应用的容忍度。Bending waveguides are mainly used in on-chip photonic/optoelectronic integration, and more recently in the fields of optical communication and optical computing. In order to realize on-chip photonic integration, the wiring of the waveguide must be considered. In order to complete any wiring, the waveguide must be bent. However, when light passes through a curved waveguide, the curvature of the waveguide caused by the bending will cause mode mismatch and distortion, and spurious modes different from the input mode will appear, resulting in loss and crosstalk. Especially in the case of on-chip photonic integration, the superposition of loss and crosstalk of multiple curved waveguides will exceed the tolerance of practical applications.

为了降低弯曲波导的损耗和串扰,提出了可应用于片上光子集成的基于人工微纳结构的弯曲波导。对于基于人工微纳结构的弯曲波导来说,最重要的,也是其性能表现所依赖的,就是其微纳结构的几何结构(也称为设计版图),几何结构一般会由数个参数决定,因此如何得到这些参数的值成为弯曲波导设计的主要技术问题。In order to reduce the loss and crosstalk of curved waveguides, a curved waveguide based on artificial micro-nanostructures that can be applied to on-chip photonic integration is proposed. For curved waveguides based on artificial micro-nano structures, the most important thing, and what their performance depends on, is the geometric structure of their micro-nano structures (also called design layout). The geometric structure is generally determined by several parameters. Therefore, how to obtain the values of these parameters has become the main technical problem of curved waveguide design.

发明内容Contents of the invention

有鉴于此,本发明提供了一种弯曲波导和基于遗传算法的弯曲波导设计方法。In view of this, the present invention provides a curved waveguide and a method for designing the curved waveguide based on a genetic algorithm.

第一方面,本发明提供一种弯曲波导,所述弯曲波导上形成有微纳结构,所述微纳结构为以下任意一种:沿着光传播的方向分布的多个纳米槽、垂直于光传播的方向分布的多个纳米槽或者弯曲波导区域内任意形状的纳米孔。In the first aspect, the present invention provides a curved waveguide, wherein a micro-nano structure is formed on the curved waveguide, and the micro-nano structure is any one of the following: a plurality of nano-slots distributed along the direction of light propagation; Multiple nanoslots distributed in the direction of propagation or nanoholes of arbitrary shape in the curved waveguide region.

可选地,构成所述弯曲波导的两条曲线的形状为超椭圆曲线。Optionally, the shape of the two curves constituting the curved waveguide is a hyperelliptic curve.

可选地,当所述微纳结构为沿着光传播的方向分布的多个纳米槽时,构成每个所述纳米槽的两条曲线的形状为超椭圆曲线。Optionally, when the micro/nano structure is a plurality of nanogrooves distributed along the direction of light propagation, the shape of the two curves constituting each of the nanogrooves is a hyperelliptic curve.

第二方面,本发明提供一种基于遗传算法的弯曲波导设计方法,包括:In a second aspect, the present invention provides a method for designing a curved waveguide based on a genetic algorithm, including:

步骤1),随机生成一个初始种群,包括多个个体,每个所述个体的基因根据构成弯曲波导的两条曲线的参数、划分刻蚀区域的多条曲线的参数以及所述刻蚀区域的刻蚀参数进行编码,其中所述刻蚀区域用于在弯曲波导上形成微纳结构;Step 1), randomly generate an initial population, including a plurality of individuals, each individual's gene is based on the parameters of the two curves that constitute the curved waveguide, the parameters of the multiple curves that divide the etched area, and the parameters of the etched area. Etching parameters are encoded, wherein the etched area is used to form micro-nano structures on the curved waveguide;

步骤2),根据种群中每个所述个体的基因,确定每个所述个体的几何形状与版图,得到每个所述个体的器件模型,并根据每个所述个体的器件模型求解得到每个所述个体的透射率和串扰;Step 2), according to the gene of each individual in the population, determine the geometric shape and layout of each individual, obtain the device model of each individual, and obtain each device model according to the device model of each individual The transmittance and crosstalk of each of the individuals;

步骤3),根据每个所述个体的透射率和串扰,分别计算每个所述个体的适应度,并找出种群中适应度最高的个体作为最优个体;Step 3), according to the transmittance and crosstalk of each individual, calculate the fitness of each individual respectively, and find out the individual with the highest fitness in the population as the optimal individual;

步骤4),判断是否达到迭代终止条件,若是,则输出所述最优个体,结束迭代,若否,更新迭代次数,执行步骤5);Step 4), judging whether the iteration termination condition is reached, if so, then output the optimal individual, and end the iteration, if not, update the number of iterations, and perform step 5);

步骤5),通过选择操作、交叉操作和变异操作,生成下一代种群,返回步骤2)。Step 5), generate the next generation population through selection operation, crossover operation and mutation operation, return to step 2).

可选地,构成所述弯曲波导的两条曲线的形状为超椭圆曲线;Optionally, the shape of the two curves constituting the curved waveguide is a hyperelliptic curve;

超椭圆曲线的解析式为:The analytical formula of hyperelliptic curve is:

Figure BDA0004152665700000021
Figure BDA0004152665700000021

其中n,a,b都是正数,∣∣代表绝对值。Among them, n, a, and b are all positive numbers, and ∣∣ represents the absolute value.

可选地,当所述微纳结构为沿着光传播的方向分布的多个纳米槽时,划分刻蚀区域的曲线的形状为超椭圆曲线;Optionally, when the micro-nano structure is a plurality of nano-grooves distributed along the direction of light propagation, the shape of the curve dividing the etching area is a hyperelliptic curve;

每个所述个体的基因根据构成弯曲波导的两条超椭圆曲线、划分刻蚀区域的多条超椭圆曲线的参数n以及所述刻蚀区域的刻蚀参数进行编码。The genes of each individual are coded according to the two hyperelliptic curves constituting the curved waveguide, the parameter n of multiple hyperelliptic curves dividing the etched area, and the etching parameters of the etched area.

可选地,所述刻蚀区域的刻蚀参数为一串二进制数,每个二进制数用于表示对应的刻蚀区域是否被刻蚀,0表示不刻蚀,1表示刻蚀。Optionally, the etching parameters of the etching area are a series of binary numbers, each binary number is used to indicate whether the corresponding etching area is etched, 0 indicates no etching, and 1 indicates etching.

可选地,所述选择操作,包括:根据精英保留策略,保留种群中的最优个体直接进入下一代种群;对当前种群采用锦标赛法选择出适应度更高的个体作为下一代种群的父本和母本;Optionally, the selection operation includes: according to the elite retention strategy, retaining the best individuals in the population directly enters the next generation population; using the tournament method for the current population to select individuals with higher fitness as the parent of the next generation population and the parent;

所述交叉操作,包括:按照设定的交叉点位和交叉规则,对选择出的父本和母本的染色体进行交叉,得到的个体进入下一代种群;The crossover operation includes: according to the set crossover point and crossover rules, crossover the chromosomes of the selected father and mother, and the obtained individuals enter the next generation population;

所述变异操作,包括:按照设定的变异个体数量和变异位数,对下一代种群的染色体进行变异。The mutation operation includes: mutating the chromosomes of the next generation population according to the set number of mutated individuals and the number of mutated digits.

第三方面,本发明提供一种电子设备,包括存储器、处理器及存储在存储器上并可在处理器上运行的计算机程序,所述处理器执行所述计算机程序时实现上述的基于遗传算法的弯曲波导设计方法。In a third aspect, the present invention provides an electronic device, including a memory, a processor, and a computer program stored on the memory and operable on the processor. When the processor executes the computer program, the above-mentioned genetic algorithm-based Curved waveguide design method.

第四方面,本发明提供一种非暂态计算机可读存储介质,其上存储有计算机程序,该计算机程序被处理器执行时实现上述的基于遗传算法的弯曲波导设计方法。In a fourth aspect, the present invention provides a non-transitory computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the above-mentioned curved waveguide design method based on a genetic algorithm is implemented.

本发明实施例提供的一种弯曲波导,通过在弯曲波导上刻蚀微纳结构,引入折射率微扰来对模式进行调控,对模式失配进行补偿,抑制模式畸变从而实现了低损耗,低串扰,小尺寸(小弯曲半径)且支持多个模式的传输。另外基于遗传算法的弯曲波导设计方法,是一种逆向设计方法,可以根据设计需求,快速确定微纳结构刻蚀参数,得到弯曲波导的设计版图。而且具有很好的通用性,可以应用于其他类似微纳光学器件的设计。A curved waveguide provided by an embodiment of the present invention, by etching micro-nano structures on the curved waveguide, introducing refractive index perturbation to regulate the mode, compensate the mode mismatch, and suppress the mode distortion to achieve low loss and low Crosstalk, small size (small bend radius) and support for multiple modes of transmission. In addition, the curved waveguide design method based on the genetic algorithm is a reverse design method, which can quickly determine the etching parameters of the micro-nano structure according to the design requirements, and obtain the design layout of the curved waveguide. Moreover, it has good versatility and can be applied to the design of other similar micro-nano optical devices.

附图说明Description of drawings

图1为本发明一实施例的弯曲波导的结构示意图;FIG. 1 is a schematic structural diagram of a curved waveguide according to an embodiment of the present invention;

图2为本发明一实施例的划分刻蚀区域的示意图;FIG. 2 is a schematic diagram of dividing etching regions according to an embodiment of the present invention;

图3为本发明一实施例的基于遗传算法的弯曲波导设计方法的流程示意图;3 is a schematic flow chart of a method for designing a curved waveguide based on a genetic algorithm according to an embodiment of the present invention;

图4为应用本发明实施例的弯曲波导设计方法的部分设计结果;FIG. 4 is a partial design result of applying the curved waveguide design method according to the embodiment of the present invention;

图5为本发明一实施例的电子设备的结构示意图。FIG. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.

具体实施方式Detailed ways

为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

需要说明的是,本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的本申请的实施例。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。It should be noted that the terms "first" and "second" in the description and claims of the present application and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It should be understood that the data so used may be interchanged under appropriate circumstances for the embodiments of the application described herein. Furthermore, the terms "comprising" and "having", as well as any variations thereof, are intended to cover a non-exclusive inclusion, for example, a process, method, system, product or device comprising a sequence of steps or elements is not necessarily limited to the expressly listed instead, may include other steps or elements not explicitly listed or inherent to the process, method, product or apparatus.

下面结合附图,对本发明的一些实施方式作详细说明。在不冲突的情况下,下述的实施例及实施例中的特征可以相互组合。Some embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. In the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

本发明一实施例提供一种弯曲波导,弯曲波导上形成有微纳结构,该微纳结构为以下任意一种:沿着光传播的方向分布的多个纳米槽、垂直于光传播的方向分布的多个纳米槽或者弯曲波导区域内任意形状的纳米孔。An embodiment of the present invention provides a curved waveguide. A micro-nano structure is formed on the curved waveguide. The micro-nano structure is any one of the following: a plurality of nano-grooves distributed along the direction of light propagation, and a plurality of nano-grooves distributed perpendicular to the direction of light propagation. Multiple nanoslots or nanoholes of arbitrary shape in the curved waveguide region.

在一个实施例中,该弯曲波导的材料为Si-SiO2-Si的SOI(绝缘体上硅)体系,弯曲波导的顶硅形成有上述微纳结构。纳米槽在顶硅通过浅刻蚀得到,纳米孔通过在顶硅全刻蚀得到。In one embodiment, the material of the curved waveguide is Si-SiO 2 -Si SOI (silicon-on-insulator) system, and the top silicon of the curved waveguide is formed with the micro-nano structure. Nanogrooves are obtained by shallow etching on the top silicon, and nanopores are obtained by full etching on the top silicon.

弯曲波导由两条特定曲线构成,曲线采用可由一定参数与解析式确定的任意曲线,如圆弧,贝塞尔曲线,欧拉曲线,超椭圆曲线等。图1为一个实施例的弯曲波导的结构示意图,如图1所示,图1中上图为弯曲波导的俯视图,下图为弯曲波导的立视图。构成弯曲波导的两条曲线的形状为超椭圆曲线。The curved waveguide is composed of two specific curves, and the curves are arbitrary curves that can be determined by certain parameters and analytical formulas, such as circular arcs, Bezier curves, Euler curves, superelliptic curves, etc. Fig. 1 is a schematic structural diagram of a curved waveguide according to an embodiment, as shown in Fig. 1 , the upper diagram in Fig. 1 is a top view of the curved waveguide, and the lower diagram is an elevation view of the curved waveguide. The shape of the two curves that make up the curved waveguide is a hyperelliptic curve.

超椭圆曲线的解析式为:The analytical formula of hyperelliptic curve is:

Figure BDA0004152665700000041
Figure BDA0004152665700000041

其中n,a,b都是正数,∣∣代表绝对值。a,b的取值与弯曲半径有关,无特殊意义,为一常数。有意义的值为系数n,n的取值决定了曲线的形状。例如,当n=2时,曲线即为圆弧。n=3时,曲线近似于多模弯曲波导设计中常用的欧拉曲线。简单的说,超椭圆曲线可以包含部分除自由曲线外的部分特殊曲线。Among them, n, a, and b are all positive numbers, and ∣∣ represents the absolute value. The values of a and b are related to the bending radius and have no special meaning, they are a constant. A meaningful value is the coefficient n, and the value of n determines the shape of the curve. For example, when n=2, the curve is a circular arc. When n=3, the curve is similar to the Euler curve commonly used in multimode curved waveguide design. Simply put, hyperelliptic curves can contain some special curves except free curves.

另外,当微纳结构为沿着光传播的方向分布的多个纳米槽时,优选地,构成每个纳米槽的两条曲线的形状为超椭圆曲线。图1中,各条超椭圆曲线的参数n可以相同,也可以不同。In addition, when the micro-nano structure is a plurality of nano-grooves distributed along the direction of light propagation, preferably, the shape of the two curves constituting each nano-groove is a hyperelliptic curve. In Fig. 1, the parameter n of each hyperelliptic curve can be the same or different.

顶硅厚度视所需模式的不同和工艺水平确定,只支持TE模式,顶硅厚度一般选择为220nm,同时支持TE模式与TM模式,顶硅厚度选择为340nm,工作波长为通信波长1550nm。纳米槽刻蚀深度一般由工艺水平和需求确定,一般只支持TE,220nm厚顶硅的话,纳米槽会浅一点,支持TE和TM,340nm厚顶硅的话,纳米槽会刻深一点。The thickness of the top silicon depends on the required mode and the process level. Only TE mode is supported. The thickness of the top silicon is generally selected as 220nm. Both TE mode and TM mode are supported. The thickness of the top silicon is 340nm, and the working wavelength is the communication wavelength of 1550nm. The etching depth of the nano-groove is generally determined by the process level and requirements. Generally, only TE is supported. If the top silicon is 220nm thick, the nano-groove will be shallower. If it supports TE and TM, the nano-groove will be deeper if the top silicon is 340nm thick.

本发明实施例对弯曲波导的结构作出一定的优化,通过在弯曲波导上刻蚀微纳结构,例如沿着光传播的方向浅刻蚀纳米槽,引入折射率微扰来对模式进行调控,对模式失配进行补偿,抑制模式畸变从而实现了低损耗,低串扰,小尺寸(小弯曲半径)且支持多个模式的传输。The embodiment of the present invention optimizes the structure of the curved waveguide to a certain extent. By etching micro-nano structures on the curved waveguide, for example, shallow etching of nano-grooves along the direction of light propagation, and introducing perturbation of the refractive index to regulate the mode, the Mode mismatch is compensated and mode distortion is suppressed to achieve low loss, low crosstalk, small size (small bending radius) and support for multiple modes of transmission.

具体来说,优化方式包括:曲线形状优化和浅刻蚀纳米槽。Specifically, the optimization methods include: curve shape optimization and shallow etching of nano-grooves.

其一,曲线形状优化的含义是指选择特殊的曲线作为弯曲波导曲线。本发明实施例所采用的弯曲波导曲线是超椭圆曲线。参考上面给出的超椭圆曲线的解析式,为了保证对称性,这里可以取a=b。First, the meaning of curve shape optimization refers to selecting a special curve as the curved waveguide curve. The curved waveguide curve used in the embodiment of the present invention is a hyperelliptic curve. Referring to the analytical formula of the hyperelliptic curve given above, in order to ensure symmetry, a=b can be taken here.

另外说明的是,通常情况下,弯曲波导的宽度是等宽的,即与直波导的宽度相等。本实施例所采用的超椭圆曲线,如果构成弯曲波导的两条曲线,其系数n相等的话,其也应该是等宽的。但是,为了能够更好的支持高阶模式和减小损耗,也可以选择将构成弯曲波导的两条曲线的系数n设置为变化的。系数n相同还是不同,由算法决定,后续会详细介绍。In addition, in general, the width of the curved waveguide is equal to that of the straight waveguide. For the hyperelliptic curve used in this embodiment, if the coefficients n of the two curves constituting the curved waveguide are equal, they should also be of equal width. However, in order to better support high-order modes and reduce losses, it is also possible to choose to set the coefficient n of the two curves constituting the curved waveguide to be variable. Whether the coefficient n is the same or different is determined by the algorithm, which will be introduced in detail later.

其二,浅刻蚀纳米槽的含义是指在弯曲波导的顶硅上刻蚀形成多个纳米槽。当多个纳米槽采用沿着光传播的方向分布时,构成每个纳米槽的两条曲线的形状也采用超椭圆曲线。Second, shallow etching of nano-grooves means etching and forming multiple nano-grooves on the top silicon of the curved waveguide. When a plurality of nanogrooves are distributed along the direction of light propagation, the shape of the two curves constituting each nanogroove also adopts hyperelliptic curves.

进一步地,在本实施例中,纳米槽的形成方法是:先在弯曲波导上划分出多个刻蚀区域,以下称为纳米槽刻蚀区域,然后确定每个位置的纳米槽刻蚀区域是否被刻蚀。以下具体介绍。Further, in this embodiment, the formation method of the nano-groove is: first divide a plurality of etching regions on the curved waveguide, hereinafter referred to as the nano-groove etching region, and then determine whether the nano-groove etching region at each position is is etched. The following is a detailed introduction.

首先纳米槽刻蚀区域的划分方式取决于特征尺寸。First, the division method of the etched area of the nano-groove depends on the feature size.

举例如下:Examples are as follows:

假设弯曲波导要求支持4个TE模式,选择顶硅厚度为220nm,由色散曲线确定了波导宽度为1500nm,特征尺寸为100nm。参考图2,划分纳米槽刻蚀区域时,采用等分的方式,在直波导和弯曲波导连接处划分为15段(图2中圆圈处),每100nm有1段,这个100nm是特征尺寸,也是接下来纳米槽的最小宽度。沿着光传播的方向通过连接入射端和出射端所划分的端点(两端各有14个端点),就能划分出对应的15个纳米槽刻蚀区域。Assuming that the curved waveguide is required to support 4 TE modes, the thickness of the top silicon is selected to be 220nm, the waveguide width is determined to be 1500nm by the dispersion curve, and the characteristic size is 100nm. Referring to Figure 2, when dividing the nano-groove etching area, the method of equal division is adopted, and the connection between the straight waveguide and the curved waveguide is divided into 15 sections (circled in Figure 2), and there is one section every 100nm. This 100nm is the characteristic size. It is also the minimum width of the next nanoslot. Along the direction of light propagation, by connecting the endpoints divided by the incident end and the outgoing end (there are 14 endpoints at both ends), the corresponding 15 nano-groove etching regions can be divided.

这里一共有16条曲线,包括构成弯曲波导的两条曲线和划分纳米槽刻蚀区域的14条曲线。这16条曲线都是超椭圆曲线,每条超椭圆曲线的系数n不一定相同,可以是变化的。设第一条曲线的系数为n,曲线梯度为dn,第二条曲线的系数就为n+dn,同理,第k条曲线的系数为n+k*dn。n和dn由算法决定。当dn为0时,是等宽波导,当dn不为0时,是宽度渐变的波导。最窄宽度位置是与直波导连接处。There are a total of 16 curves, including two curves forming the curved waveguide and 14 curves dividing the etched area of the nanoslot. These 16 curves are hyperelliptic curves, and the coefficient n of each hyperelliptic curve is not necessarily the same, but can be changed. Suppose the coefficient of the first curve is n, the gradient of the curve is dn, the coefficient of the second curve is n+dn, similarly, the coefficient of the kth curve is n+k*dn. n and dn are determined by the algorithm. When dn is 0, it is a waveguide with equal width, and when dn is not 0, it is a waveguide with gradually changing width. The narrowest width location is where it connects to the straight waveguide.

在完成纳米槽刻蚀区域的划分后,由算法决定每个位置的纳米槽刻蚀区域是否被刻蚀。After the division of the etched area of the nano-groove is completed, an algorithm determines whether the etched area of the nano-groove at each position is to be etched.

简单来说,在弯曲波导上使用14条超椭圆曲线沿着光传播的方向在弯曲波导上划分出15个纳米槽刻蚀区域,每个纳米槽刻蚀区域的形状是由相邻两条超椭圆曲线决定,其中部分纳米槽刻蚀区域被刻蚀,部分纳米槽刻蚀区域被保留,最终形成多个纳米槽。To put it simply, 14 hyperelliptic curves are used on the curved waveguide to divide 15 nanogroove etching regions along the direction of light propagation. The elliptic curve determines that part of the etched area of the nano-groove is etched, and part of the etched area of the nano-groove is retained, and finally a plurality of nano-grooves are formed.

另一方面,本发明一实施例提供一种基于遗传算法的弯曲波导设计方法,如图3所示,该方法包括步骤S301~S305。On the other hand, an embodiment of the present invention provides a method for designing a curved waveguide based on a genetic algorithm. As shown in FIG. 3 , the method includes steps S301-S305.

步骤S301,随机生成一个初始种群,包括多个个体,每个个体的基因根据构成弯曲波导的两条曲线的参数、划分刻蚀区域的多条曲线的参数以及刻蚀区域的刻蚀参数进行编码,其中刻蚀区域用于在弯曲波导上形成微纳结构;Step S301, randomly generate an initial population, including multiple individuals, each individual's gene is encoded according to the parameters of the two curves that constitute the curved waveguide, the parameters of the multiple curves that divide the etching area, and the etching parameters of the etching area , where the etched area is used to form micro-nano structures on the curved waveguide;

步骤S302,根据种群中每个个体的基因,确定每个个体的几何形状与版图,得到每个个体的器件模型,并根据每个个体的器件模型求解得到每个个体的透射率和串扰;Step S302, according to the gene of each individual in the population, determine the geometry and layout of each individual, obtain the device model of each individual, and obtain the transmittance and crosstalk of each individual by solving according to the device model of each individual;

步骤S303,根据每个个体的透射率和串扰,分别计算每个个体的适应度,并找出种群中适应度最高的个体作为最优个体;Step S303, calculate the fitness of each individual according to the transmittance and crosstalk of each individual, and find the individual with the highest fitness in the population as the optimal individual;

步骤S304,判断是否达到迭代终止条件,若是,则输出最优个体,结束迭代,若否,更新迭代次数,执行步骤S305;Step S304, judging whether the iteration termination condition is met, if so, output the optimal individual, and end the iteration, if not, update the number of iterations, and execute step S305;

步骤S305,通过选择操作、交叉操作和变异操作,生成下一代种群,返回步骤S302。Step S305, generate the next generation population through selection operation, crossover operation and mutation operation, return to step S302.

下面对各步骤展开介绍。Each step is introduced below.

在步骤S301,随机生成一个初始种群,种群有多个个体,假设种群有40个个体,一个个体代表一个设计的弯曲波导,即有40个不同的弯曲波导。每个个体的基因根据构成弯曲波导的两条曲线的参数、划分刻蚀区域的多条曲线的参数以及刻蚀区域的刻蚀参数进行编码。In step S301, an initial population is randomly generated, and the population has a plurality of individuals, assuming that the population has 40 individuals, and one individual represents a designed curved waveguide, that is, there are 40 different curved waveguides. Each individual's genes are encoded according to the parameters of the two curves that make up the curved waveguide, the parameters of the multiple curves that divide the etched area, and the etching parameters of the etched area.

具体表现为40个不同的二进制字符串(也就是个体的基因或者叫做染色体),如个体1:010010…,个体2:101010…。每一个二进制字符串代表了一个弯曲波导的参数。It is specifically expressed as 40 different binary strings (that is, individual genes or chromosomes), such as individual 1: 010010..., individual 2: 101010.... Each binary string represents a parameter of the curved waveguide.

在一个实施例中,构成弯曲波导的两条曲线采用超椭圆曲线,超椭圆曲线的解析式为:In one embodiment, the two curves constituting the curved waveguide are hyperelliptic curves, and the analytical formula of the hyperelliptic curve is:

Figure BDA0004152665700000071
Figure BDA0004152665700000071

其中n,a,b都是正数,∣∣代表绝对值。Among them, n, a, and b are all positive numbers, and ∣∣ represents the absolute value.

进一步地,微纳结构为以下任意一种:沿着光传播的方向分布的多个纳米槽、垂直于光传播的方向分布的多个纳米槽、或者任意形状的纳米孔。当微纳结构为沿着光传播的方向分布的多个纳米槽时,划分刻蚀区域的多条曲线也采用超椭圆曲线;Further, the micro-nano structure is any one of the following: a plurality of nanogrooves distributed along the direction of light propagation, a plurality of nanogrooves distributed perpendicular to the direction of light propagation, or nanoholes of arbitrary shape. When the micro-nano structure is a plurality of nano-grooves distributed along the direction of light propagation, the multiple curves dividing the etching area also adopt hyperelliptic curves;

那么对应的,每个个体的基因根据构成弯曲波导的两条超椭圆曲线、划分刻蚀区域的多条超椭圆曲线的参数n以及刻蚀区域的刻蚀参数进行编码。Correspondingly, the genes of each individual are encoded according to the two hyperelliptic curves constituting the curved waveguide, the parameter n of multiple hyperelliptic curves dividing the etched area, and the etching parameters of the etched area.

这里举例说明。假设划分成15个刻蚀区域,构成弯曲波导的两条超椭圆曲线和划分刻蚀区域的14条超椭圆曲线,一共是16条曲线,基因编码包括16条超椭圆曲线的参数n以及刻蚀区域的刻蚀参数。如果这16条超椭圆曲线之间存在关联,例如梯度为dn,那么基因编码包括n和dn。设第一条曲线的系数为n,曲线梯度为dn,第二条曲线的系数就为n+dn,同理,第k条曲线的系数为n+k*dn。n和dn由算法决定。当dn为0时,是等宽波导,当dn不为0时,是宽度渐变的波导。最窄宽度位置是与直波导连接处。Here is an example. Assuming that it is divided into 15 etching areas, two hyperelliptic curves that constitute the curved waveguide and 14 hyperelliptic curves that divide the etching area, there are 16 curves in total, and the genetic code includes the parameter n of the 16 hyperelliptic curves and the etching Etching parameters for the region. If there is an association between these 16 hyperelliptic curves, for example, the gradient is dn, then the genetic code includes n and dn. Suppose the coefficient of the first curve is n, the gradient of the curve is dn, the coefficient of the second curve is n+dn, similarly, the coefficient of the kth curve is n+k*dn. n and dn are determined by the algorithm. When dn is 0, it is a waveguide with equal width, and when dn is not 0, it is a waveguide with gradually changing width. The narrowest width location is where it connects to the straight waveguide.

至于刻蚀区域的刻蚀参数,采用一串二进制数,每个二进制数用于表示对应的刻蚀区域是否被刻蚀,0表示不刻蚀,1表示刻蚀。As for the etching parameters of the etching area, a series of binary numbers are used, and each binary number is used to indicate whether the corresponding etching area is etched, 0 indicates no etching, and 1 indicates etching.

个体基因的位数由弯曲波导参数的数量和每个参数的字符位数有关。例如:弯曲波导有40个参数,每个参数由4位字符组成,如1010,那么一个个体基因总的位数就是160位。具体的基因编码规则可以自己定义。The number of bits for an individual gene is related to the number of curved waveguide parameters and the number of character bits for each parameter. For example: the curved waveguide has 40 parameters, and each parameter is composed of 4 characters, such as 1010, then the total number of bits of an individual gene is 160 bits. The specific gene coding rules can be defined by yourself.

另外说明的是,本身算法添加了限制条件,若有相同个体的产生,则只保留其中一个,并重新生成新的不同的个体,即每个个体的基因都不同。In addition, the algorithm itself has added restrictions. If there are identical individuals, only one of them will be kept, and new and different individuals will be regenerated, that is, the genes of each individual are different.

在步骤S302,对基因解码,实现个体基因的二进制字符串和参数之间的转换,确定每个个体的几何形状与版图,得到每个个体的器件模型,并根据每个所述个体的器件模型使用有限元(FEM)求解软件COMSOL对弯曲波导的电磁场进行求解,求解得到每个个体的透射率和串扰(借助Matlab和COMSOL的接口,实现代码自动生成模型,自动求解)。透射率和串扰代表着弯曲波导的性能,透射率越高越好,串扰越低越好。In step S302, the gene is decoded to realize the conversion between the binary string of the individual gene and the parameters, determine the geometry and layout of each individual, obtain the device model of each individual, and according to the device model of each individual Use the finite element (FEM) solution software COMSOL to solve the electromagnetic field of the curved waveguide, and obtain the transmittance and crosstalk of each individual (with the help of the interface between Matlab and COMSOL, the code is automatically generated and the model is automatically solved). Transmittance and crosstalk represent the performance of the curved waveguide. The higher the transmittance, the better, and the lower the crosstalk, the better.

在步骤S303,结合每个个体的透射率和串扰,选择一个合适的适应度函数对弯曲波导的性能进行表征。本申请不对适应度函数作具体限定。In step S303, combining the transmittance and crosstalk of each individual, an appropriate fitness function is selected to characterize the performance of the curved waveguide. This application does not specifically limit the fitness function.

在步骤S304,判断是否达到迭代终止条件,终止条件可设置两个条件:是否收敛,或者是否达到目标。满足任意一个条件就输出优化后的最优个体作为结果。若两个条件都不满足,就进行下一步来生成下一代种群。In step S304, it is judged whether the iteration termination condition is reached, and the termination condition can set two conditions: whether to converge, or whether to reach the target. If any condition is met, the optimized individual is output as the result. If the two conditions are not met, proceed to the next step to generate the next generation population.

具体地,举例说明如下:Specifically, examples are as follows:

判断是否收敛:假设第50代的最优个体适应度为0.901,而十代前,也就是第40代的最优个体适应度为0.9。计算了十代,但提升幅度小于1%,就认为它收敛了。再继续优化下去,性能提升幅度不大,性价比极低。此时,停止计算。Judging whether it is converged: Assume that the optimal individual fitness of the 50th generation is 0.901, and the optimal individual fitness of the 40th generation ten generations ago is 0.9. Ten generations are computed, but the improvement is less than 1%, it is considered converged. If we continue to optimize, the performance improvement will be small, and the cost performance will be extremely low. At this point, the calculation is stopped.

判断是否达到目标:例如,对个体的性能要求是0.9以上适应度,达到了就结束。Judging whether the goal is reached: For example, if the individual performance requirement is a fitness of 0.9 or more, it will end when it is reached.

在步骤S305,通过选择操作、交叉操作和变异操作,产生下一代种群。既然当前种群的个体达不到要求,就要生成下一代种群,生成的方式是通过选择出优秀的个体,对他们的基因进行交叉,产生下一代种群的个体。同时,引入变异,保证种群的基因多样性和跳出优化陷阱。In step S305, the next generation population is generated through selection operation, crossover operation and mutation operation. Since the individuals in the current population do not meet the requirements, it is necessary to generate the next generation population by selecting excellent individuals and crossing their genes to generate individuals in the next generation population. At the same time, introduce variation to ensure the genetic diversity of the population and jump out of the optimization trap.

选择操作:本发明实施例根据精英保留策略,保留种群中的最优个体直接进入下一代种群;对当前种群采用锦标赛法选择出适应度最高的个体作为下一代种群的父本和母本,以保证优秀基因的保留。Selection operation: In the embodiment of the present invention, according to the elite retention strategy, the best individual in the reserved population directly enters the next generation population; the current population adopts the tournament method to select the individual with the highest fitness as the male parent and female parent of the next generation population, to Guarantee the retention of excellent genes.

精英保留策略:简单来说就是当前种群的最优个体直接被保留进入下一代种群。例如当前种群的最优个体基因为10001000,下一代种群有40个个体,那么下一代一定会有一个个体的基因是10001000,其他的39个个体的基因由选择、交叉、变异产生。简单来说,最优个体保送下一代种群,防止优秀个体因为交叉或者变异消失,也保证不会出现越优化最优个体越差的情况。Elite retention strategy: Simply put, the best individuals in the current population are directly retained into the next generation population. For example, the optimal individual gene of the current population is 10001000, and there are 40 individuals in the next generation population, then there must be one individual whose gene is 10001000 in the next generation, and the genes of the other 39 individuals are produced by selection, crossover, and mutation. To put it simply, the best individuals are recommended to the next generation population to prevent excellent individuals from disappearing due to crossover or mutation, and also to ensure that the more optimized the best individuals, the worse they will be.

前面在保留了最优个体后,还有39个个体的基因要生成。每个基因都是由父母的基因的交叉所形成的。那么就要选39对父母,不同的选择策略对结果会有一定的影响。本发明实施例采用了锦标赛法选择出适应度更高的个体作为下一代种群的父本和母本。After retaining the optimal individual, there are still 39 individual genes to be generated. Each gene is formed by the crossover of the genes of the parents. Then we have to choose 39 pairs of parents, and different selection strategies will have a certain impact on the results. The embodiment of the present invention adopts the tournament method to select individuals with higher fitness as the male parent and female parent of the next generation population.

例如40个个体,随机选择10个出来,选择了1-10,比较他们的适应度,这10个里面最优秀的是1号,1号就是父本。采用同样的方法得到母本。很明显看出,适应度越高,个体越优秀,被选为父母的概率越大。For example, out of 40 individuals, 10 are randomly selected, and 1-10 are selected to compare their fitness. Among the 10, the best is No. 1, and No. 1 is the male parent. The mother parent was obtained in the same way. It is obvious that the higher the fitness, the better the individual, and the greater the probability of being selected as a parent.

需要说明的是,实际选择中,可能会出现,个体太过优秀,以至于某次选择中父母都是该个体的情况。这种就牵扯到后面的变异操作,会在后面说明。It should be noted that in actual selection, there may be situations where the individual is so good that both parents are the individual in a certain selection. This kind of mutation operation will be involved later, which will be explained later.

交叉操作:本发明实施例按照设定的交叉点位和交叉规则,对选择出的父本和母本的染色体进行交叉,得到的个体进入下一代种群。也就是说,两个个体都很优秀,但不知道哪个参数使它性能好。所以就将两个个体的基因混合一下,看看会更好还是更差。Crossover operation: the embodiment of the present invention crosses the chromosomes of the selected father and mother according to the set crossover point and crossover rules, and the obtained individuals enter the next generation population. That is, both individuals are excellent, but it is not known which parameter makes it perform better. So just mix the genes of two individuals and see if it's better or worse.

举例如下:父本染色体为100100100100,母本染色体为110110110110,染色体是12位的,随机取一个数,取到6,交叉点位就是第六点,子代的前六位染色体就是父本的前六位,子代的后六位染色体就是母本的后六位(反过来也可以,自由设置)。子代染色体就是100100110110。An example is as follows: the paternal chromosome is 100100100100, the maternal chromosome is 110110110110, and the chromosome is 12 bits. A number is randomly selected, and if it is 6, the intersection point is the sixth point. The first six chromosomes of the offspring are the first six chromosomes of the father. Six digits, the last six chromosomes of the offspring are the last six digits of the mother (the reverse is also possible, set freely). The offspring chromosome is 100100110110.

需要说明的是,交叉点位不一定是1位,一般会与染色体长度有关。越长的染色体交叉点位一般越多。因为染色体太长,参数太多时,仅交叉1位会变化太小,进化速度太慢。例如在一个实施例中,160位染色体时,可能会取个3个交叉点位。It should be noted that the intersection point is not necessarily 1, and is generally related to the length of the chromosome. Longer chromosomes generally have more intersection points. Because the chromosome is too long and there are too many parameters, only one bit of crossover will change too little, and the evolution rate is too slow. For example, in one embodiment, when there are 160 chromosomes, 3 intersection points may be selected.

变异操作:变异操作是在交叉完毕,生成一组新的染色体后,随机选择出的某个个体的某位染色体进行改变生成新的染色体。本发明实施例按照设定的变异个体数量和变异位数,对下一代种群的染色体进行变异。Mutation operation: The mutation operation is to change a certain chromosome of an individual randomly selected to generate a new chromosome after the crossover is completed and a new set of chromosomes is generated. The embodiments of the present invention mutate the chromosomes of the next generation population according to the set number of mutated individuals and the number of mutated digits.

例如,下一代种群有40个个体,保留了上一代一个最优个体的染色体,选择操作、交叉操作生成了39个染色体。例如随机取其中的两个染色体1和20。1号和20号的染色体分别是11111111和00000000。再分别对他们取一位,例如1号染色体取了第3位,变异(0转为1,1转为0),新的个体就是11011111。20号的个体取了第四位,变异后新的个体就是00010000。For example, there are 40 individuals in the next-generation population, and the chromosome of an optimal individual in the previous generation is retained, and 39 chromosomes are generated by selection operation and crossover operation. For example, two chromosomes 1 and 20 are randomly selected. Chromosomes 1 and 20 are 11111111 and 00000000 respectively. Then take a bit for each of them, for example, the No. 1 chromosome takes the third place, mutates (0 turns into 1, 1 turns into 0), and the new individual is 11011111. The No. 20 individual takes the fourth place, and after the mutation, the new individual is 11011111. The individual is 00010000.

变异的最重要作用是增加种群多样性,跳出局部最优解。The most important role of mutation is to increase the diversity of the population and jump out of the local optimal solution.

例如,某一代突然有一个很优秀的超级个体(其他个体适应度普遍在0.2左右,该超级个体适应度有0.7),因为在选择操作中该超级个体会一直被选择,可能会很快的收敛在该超级个体周围。但该个体有可能是个局部最优解,即还存在适应度为0.9的个体,只不过现在陷入该个体附近很难靠交叉(染色体太相近)跳出。所以需要变异。For example, a certain generation suddenly has a very good super individual (the fitness of other individuals is generally around 0.2, and the fitness of this super individual is 0.7), because the super individual will always be selected in the selection operation, and it may converge quickly around the super entity. However, this individual may be a local optimal solution, that is, there is still an individual with a fitness of 0.9, but now it is difficult to jump out by crossover (too similar chromosomes) when it is trapped near this individual. So it needs to be mutated.

需要说明的是,变异的个体数量在整个种群中的比例不能太高,当比例太高时,遗传算法会接近随机搜索。同时,变异的位数占染色体位数的比例也不应太高。两个比例分别取决去种群个体数量和染色体位数。It should be noted that the proportion of mutated individuals in the entire population should not be too high, and when the proportion is too high, the genetic algorithm will approach random search. At the same time, the ratio of the number of mutations to the number of chromosomes should not be too high. The two ratios depend on the number of depopulated individuals and the number of chromosomes respectively.

在算法中还增添了限制,染色体完全相同的个体仅会保留一个,删除重复个体后的空位由上一代最优个体(精英保留策略所留下的最优个体)随机变异一位后补充。如此可以保证每代没有重复个体,并对最优个体的周围进行有效搜索。Restrictions are also added to the algorithm. Only one individual with the same chromosome will be retained, and the vacancy after deleting the duplicate individual will be filled by random mutation of the optimal individual of the previous generation (the optimal individual left by the elite retention strategy). In this way, it can ensure that there are no repeated individuals in each generation, and effectively search around the optimal individual.

生成下一代种群后,返回步骤S302,如此重复执行,直到达到迭代终止条件,输出最优个体。After the next-generation population is generated, return to step S302, and perform this repeatedly until the iteration termination condition is reached, and the optimal individual is output.

得到了最优个体,根据最优个体的参数在弯曲波导上刻蚀形成微纳结构,就可以得到高性能的弯曲波导。图4是应用本发明实施例的设计方法,得到的一系列高性能多模弯曲波导的设计结果。The optimal individual is obtained, and the micro-nano structure is etched on the curved waveguide according to the parameters of the optimal individual, and a high-performance curved waveguide can be obtained. Fig. 4 is a design result of a series of high-performance multimode curved waveguides obtained by applying the design method of the embodiment of the present invention.

本发明实施例提供的一种基于遗传算法的弯曲波导设计方法,是一种逆向设计方法,可以根据设计需求,快速确定弯曲波导刻蚀参数,得到弯曲波导的设计版图。而且具有很好的通用性,可以应用于其他类似微纳光学器件的设计。面向片上光子/光电集成芯片、硅光子、光计算、光通信等领域的厂商,本申请具有一定应用前景。A method for designing a curved waveguide based on a genetic algorithm provided by an embodiment of the present invention is a reverse design method, which can quickly determine the etching parameters of the curved waveguide according to design requirements, and obtain the design layout of the curved waveguide. Moreover, it has good versatility and can be applied to the design of other similar micro-nano optical devices. This application is intended for manufacturers in the fields of on-chip photonics/optoelectronic integrated chips, silicon photonics, optical computing, and optical communications. This application has certain application prospects.

图5为本发明实施例提供的电子设备结构示意图。如图5所示,该电子设备可以包括:处理器(processor)501、存储器(memory)502和通信总线503,其中,处理器501和存储器502通过通信总线503完成相互间的信。处理器501可以执行存储器502中的程序指令,以实现上述各实施例提供的基于遗传算法的弯曲波导设计方法。FIG. 5 is a schematic structural diagram of an electronic device provided by an embodiment of the present invention. As shown in FIG. 5 , the electronic device may include: a processor (processor) 501 , a memory (memory) 502 and a communication bus 503 , where the processor 501 and the memory 502 communicate with each other through the communication bus 503 . The processor 501 can execute the program instructions in the memory 502, so as to implement the method for designing a curved waveguide based on a genetic algorithm provided in the foregoing embodiments.

另一方面,本发明实施例还提供一种非暂态计算机可读存储介质,其上存储有计算机程序,该计算机程序被处理器执行时实现上述各实施例提供的基于遗传算法的弯曲波导设计方法。On the other hand, an embodiment of the present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the curved waveguide design based on the genetic algorithm provided by the above-mentioned embodiments is realized. method.

通过以上的实施方式的描述,本领域的技术人员可以清楚地了解到各实施方式可借助软件加必需的通用硬件平台的方式来实现,当然也可以通过硬件。基于这样的理解,上述技术方案本质上或者说对现有技术做出贡献的部分可以以软件产品的形式体现出来,该计算机软件产品可以存储在计算机可读存储介质中,如ROM/RAM、磁碟、光盘等,包括若干指令用以使得一台计算机设备(可以是个人计算机,服务器,或者网络设备等)执行各个实施例或者实施例的某些部分所述的方法。Through the above description of the implementations, those skilled in the art can clearly understand that each implementation can be implemented by means of software plus a necessary general-purpose hardware platform, and of course also by hardware. Based on this understanding, the essence of the above technical solution or the part that contributes to the prior art can be embodied in the form of software products, and the computer software products can be stored in computer-readable storage media, such as ROM/RAM, magnetic discs, optical discs, etc., including several instructions to make a computer device (which may be a personal computer, server, or network device, etc.) execute the methods described in various embodiments or some parts of the embodiments.

最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims (10)

1.一种弯曲波导,其特征在于,所述弯曲波导上形成有微纳结构,所述微纳结构为以下任意一种:沿着光传播的方向分布的多个纳米槽、垂直于光传播的方向分布的多个纳米槽或者弯曲波导区域内任意形状的纳米孔。1. A curved waveguide, characterized in that a micro-nano structure is formed on the curved waveguide, and the micro-nano structure is any one of the following: a plurality of nano-grooves distributed along the direction of light propagation, perpendicular to the light propagation Multiple nanoslots distributed in different directions or nanoholes of arbitrary shape in the curved waveguide region. 2.根据权利要求1所述的弯曲波导,其特征在于,构成所述弯曲波导的两条曲线的形状为超椭圆曲线。2. The curved waveguide according to claim 1, wherein the shape of the two curves constituting the curved waveguide is a hyperelliptic curve. 3.根据权利要求2所述的弯曲波导,其特征在于,当所述微纳结构为沿着光传播的方向分布的多个纳米槽时,构成每个所述纳米槽的两条曲线的形状为超椭圆曲线。3. The curved waveguide according to claim 2, characterized in that, when the micro-nano structure is a plurality of nano-grooves distributed along the direction of light propagation, the shape of two curves constituting each of the nano-grooves is a hyperelliptic curve. 4.一种基于遗传算法的弯曲波导设计方法,其特征在于,所述方法包括:4. A curved waveguide design method based on genetic algorithm, characterized in that said method comprises: 步骤1),随机生成一个初始种群,包括多个个体,每个所述个体的基因根据构成弯曲波导的两条曲线的参数、划分刻蚀区域的多条曲线的参数以及所述刻蚀区域的刻蚀参数进行编码,其中所述刻蚀区域用于在弯曲波导上形成微纳结构;Step 1), randomly generate an initial population, including a plurality of individuals, each individual's gene is based on the parameters of the two curves that constitute the curved waveguide, the parameters of the multiple curves that divide the etched area, and the parameters of the etched area. Etching parameters are encoded, wherein the etched area is used to form micro-nano structures on the curved waveguide; 步骤2),根据种群中每个所述个体的基因,确定每个所述个体的几何形状与版图,得到每个所述个体的器件模型,并根据每个所述个体的器件模型求解得到每个所述个体的透射率和串扰;Step 2), according to the gene of each individual in the population, determine the geometric shape and layout of each individual, obtain the device model of each individual, and obtain each device model according to the device model of each individual The transmittance and crosstalk of each of the individuals; 步骤3),根据每个所述个体的透射率和串扰,分别计算每个所述个体的适应度,并找出种群中适应度最高的个体作为最优个体;Step 3), according to the transmittance and crosstalk of each individual, calculate the fitness of each individual respectively, and find out the individual with the highest fitness in the population as the optimal individual; 步骤4),判断是否达到迭代终止条件,若是,则输出所述最优个体,结束迭代,若否,更新迭代次数,执行步骤5);Step 4), judging whether the iteration termination condition is reached, if so, then output the optimal individual, and end the iteration, if not, update the number of iterations, and perform step 5); 步骤5),通过选择操作、交叉操作和变异操作,生成下一代种群,返回步骤2)。Step 5), generate the next generation population through selection operation, crossover operation and mutation operation, return to step 2). 5.根据权利要求4所述的基于遗传算法的弯曲波导设计方法,其特征在于,构成所述弯曲波导的两条曲线的形状为超椭圆曲线;5. The curved waveguide design method based on genetic algorithm according to claim 4, wherein the shape of the two curves forming the curved waveguide is a hyperelliptic curve; 超椭圆曲线的解析式为:The analytical formula of hyperelliptic curve is:
Figure FDA0004152665690000011
Figure FDA0004152665690000011
其中n,a,b都是正数,∣∣代表绝对值。Among them, n, a, and b are all positive numbers, and ∣∣ represents the absolute value.
6.根据权利要求5所述的基于遗传算法的弯曲波导设计方法,其特征在于,当所述微纳结构为沿着光传播的方向分布的多个纳米槽时,划分刻蚀区域的曲线的形状为超椭圆曲线;6. The curved waveguide design method based on genetic algorithm according to claim 5, wherein when the micro-nanostructure is a plurality of nano-grooves distributed along the direction of light propagation, the curve dividing the etched area The shape is a hyperelliptic curve; 每个所述个体的基因根据构成弯曲波导的两条超椭圆曲线、划分刻蚀区域的多条超椭圆曲线的参数n以及所述刻蚀区域的刻蚀参数进行编码。The genes of each individual are coded according to the two hyperelliptic curves constituting the curved waveguide, the parameter n of multiple hyperelliptic curves dividing the etched area, and the etching parameters of the etched area. 7.根据权利要求4至6任一项所述的基于遗传算法的弯曲波导设计方法,其特征在于,所述刻蚀区域的刻蚀参数为一串二进制数,每个二进制数用于表示对应的刻蚀区域是否被刻蚀,0表示不刻蚀,1表示刻蚀。7. The method for designing a curved waveguide based on a genetic algorithm according to any one of claims 4 to 6, wherein the etching parameters of the etching region are a string of binary numbers, and each binary number is used to represent a corresponding Whether the etched area is etched, 0 means not etched, 1 means etched. 8.根据权利要求4所述的基于遗传算法的弯曲波导设计方法,其特征在于,所述选择操作,包括:根据精英保留策略,保留种群中的最优个体直接进入下一代种群;对当前种群采用锦标赛法选择出适应度更高的个体作为下一代种群的父本和母本;8. The curved waveguide design method based on genetic algorithm according to claim 4, characterized in that, the selection operation comprises: according to the elite retention strategy, the best individual in the reserved population directly enters the next generation population; for the current population Using the championship method to select individuals with higher fitness as the male and female parents of the next generation population; 所述交叉操作,包括:按照设定的交叉点位和交叉规则,对选择出的父本和母本的染色体进行交叉,得到的个体进入下一代种群;The crossover operation includes: according to the set crossover point and crossover rules, crossover the chromosomes of the selected father and mother, and the obtained individuals enter the next generation population; 所述变异操作,包括:按照设定的变异个体数量和变异位数,对下一代种群的染色体进行变异。The mutation operation includes: mutating the chromosomes of the next generation population according to the set number of mutated individuals and the number of mutated digits. 9.一种电子设备,包括存储器、处理器及存储在存储器上并可在处理器上运行的计算机程序,其特征在于,所述处理器执行所述计算机程序时实现如权利要求4至8任一所述的基于遗传算法的弯曲波导设计方法。9. An electronic device, comprising a memory, a processor, and a computer program stored on the memory and operable on the processor, characterized in that, when the processor executes the computer program, any of claims 4 to 8 can be realized. A curved waveguide design method based on genetic algorithm. 10.一种非暂态计算机可读存储介质,其上存储有计算机程序,其特征在于,该计算机程序被处理器执行时实现如权利要求4至8任一所述的基于遗传算法的弯曲波导设计方法。10. A non-transitory computer-readable storage medium, on which a computer program is stored, characterized in that, when the computer program is executed by a processor, the curved waveguide based on a genetic algorithm according to any one of claims 4 to 8 is realized design method.
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