CN116285986B - Luminescent material and luminescent device comprising same - Google Patents

Abstract

The embodiment of the invention relates to a luminescent material and a luminescent device comprising the luminescent material, wherein the luminescent material comprises a component formula A _a E _e G _g M _m X _x By selecting the element types and the content of the inorganic compound, a more stable environment is provided for the luminescence center of the formed luminescent material, so that the enhancement of light efficiency and the improvement of thermal stability are realized, the effective regulation and control of luminescence characteristics and spectral properties are realized, the absorption efficiency of doped elements in an excitation wavelength range is improved, and the improvement of emission intensity and external quantum efficiency is promoted. The inorganic compound provided by the embodiment of the invention can generate green light emission with the peak wavelength range of about 510-520 nm under the excitation of light with the wave band of 400-470nm, has higher emission intensity and narrower half-peak width, is matched with the excitation wave band of a blue light LED chip, and has good application prospect in the fields of backlight sources for ultrahigh color gamut display and the like.

Description

A luminescent material and a luminescent device containing the luminescent material

Technical field

Embodiments of the present invention relate to the technical field of luminescent materials, and in particular, to a luminescent material and a luminescent device including the luminescent material.

Background technique

With the continuous development of information technology, flat panel display devices are increasingly developing in the directions of thinness, lightness, high resolution, and high color saturation. Liquid crystal display is still the mainstream flat panel display technology due to its advantages such as stable performance, low energy consumption, and long service life. As one of the key technologies of LCD, the choice of backlight source plays a vital role in improving the display color gamut such as image clarity and color saturation. Compared with multi-chip composites, white light LEDs composed of a single chip and one or more phosphors have the characteristics of long life, small light attenuation, low cost, and stable light color, and gradually replace the cold cathode rays of traditional LCD backlights. Tube and other technologies have become the mainstream backlight source in the field of liquid crystal display. Currently, there are three main implementation methods for fluorescent conversion white LEDs. Among them, the combination of blue LED chips and red and green phosphors can be controlled by controlling the types and proportions of red and green powders to meet a variety of application scenarios. demand for light sources, and gradually developed into the mainstream LED white light implementation method.

Color gamut is one of the main parameters for evaluating display devices, which reflects the ability to reproduce real-world colors. The larger the color gamut (color space), the larger the coverage range of representative colors, and the more vivid and lifelike the colors of the display. Compared with some new display technologies, such as OLED and QLED, liquid crystal display technology with LED as backlight has the advantages of longer life, mature production technology, and lower cost. However, the current color gamut is low and cannot meet people's increasingly demanding needs. Growing visual needs. Therefore, further improvement of the color gamut has become an important development direction in the field of liquid crystal displays.

It can be seen from the working principle of the liquid crystal display that the light from the backlight needs to pass through the color filter to obtain three independent R, G, and B spectra, which are then combined into different colors. Only a backlight with a spectrum similar to that of the filter can be better transmitted without losing luminous intensity. Therefore, the half-peak width of the emission spectrum of the green and red phosphors that make up the white LED needs to be narrow and match the wavelength of the filter. At present, red phosphors are used for display, such as K ₂ SiF ₆ :Mn ⁴⁺ , etc. The half-peak width of the emission spectrum is about 5 nm, and the color coordinate is close to the lower right end of the horseshoe diagram. The improvement of the color gamut is close to the maximum. However, the current color purity of green phosphors is low, the emission spectrum is wide, and the color coordinate values corresponding to different half-peak widths and peak wavelengths are quite different. Therefore, it is urgent to develop a new narrow-band green phosphor system to further expand the color gamut. promote.

At present, green phosphors are mainly concentrated in systems with Ce ³⁺ , Eu ²⁺ or Mn ²⁺ ions as activation centers. The excitation-emission of Ce ³⁺ belongs to the transition between fd. Since its outer 4f energy level is only When an electron is excited to the 5d energy level, since there is no shielding by the outer s and p electrons, its luminescence performance is seriously affected by the surrounding crystal field, which can easily cause energy level splitting and show broad-spectrum emission. The half-peak width is generally greater than 100nm. . The 5d energy level of Eu ²⁺ ions is also exposed and is easily affected by the surrounding crystal field to cause energy level splitting. However, in some crystal structures with strong rigidity, such as β-SiAlON, Eu ²⁺ has energy level splitting. The degree of cracking is reduced, and the half-peak width of its emission spectrum can be reduced to about 50nm. The electronic configuration of Mn ²⁺ is 3d ^5. In the tetrahedral crystal field, it generally displays green luminescence of 510~540nm, with a narrow half-peak width (18~45nm), concentrated energy, high color purity, and can be emitted by blue light. It is excited by the chip, and can promote the improvement of Mn ²⁺ luminous intensity through matrix element ratio control, doping substitution, sensitization, etc., but the current luminous efficiency is not high.

In summary, green phosphors for ultra-high color gamut displays currently have problems such as low overall luminous efficiency and wide half-peak width. There is still a certain gap between actual production and application. There is an urgent need to develop new narrow-spectrum phosphors that can be excited by blue light chips. With green phosphor to meet the application needs in the field of backlight for ultra-high color gamut displays.

Contents of the invention

Based on the above situation of the prior art, the purpose of the embodiments of the present invention is to provide a luminescent material and a luminescent device containing the luminescent material, so as to solve the problem of low luminous efficiency of narrow-band green phosphors in the prior art and the problem of luminescent devices for display. The problem of low color gamut.

In order to achieve the above object, according to one aspect of the present invention, a luminescent material is provided, which includes an inorganic compound. The inorganic compound includes A element, E element, G element, M element and X element;

The A element includes at least one of La, Y, Gd and Lu elements; the E element includes one or two of Al, Ga and In elements, and at least includes Al element; the G element includes Si and one or two types of Ge elements, and at least include Si elements; the M elements include one or two types of O, N, and F elements, and at least include O elements, and the X elements include Mn, Eu and one or two of Ce elements, and at least contains Mn element;

The inorganic compound has the same crystal structure as LaAl ₃ SiO ₈ .

Further, _the composition formula of the inorganic compound is A _a E _e G _g M _m x≤0.3.

Further, 2.5≤e≤3, 0.8≤g≤1.5.

Further, the molar percentage of La, Y, Gd or Lu element in element A is b, 50%≤b≤100%.

Further, the molar ratio of the E element to the G element is c, 1.7≤c≤3.5.

Further, 0.8≤a(1-b):[2-(e-g)]/2≤1.2.

Furthermore, the element A must contain the element La.

Further, the A element is La and Sr elements.

Further, the E element is Al element, and the G element is Si element.

Further, the A element is one or two of La, Y, Gd and Lu elements.

Further, 2.8≤c≤3.2.

According to another aspect of the present invention, a light-emitting device is provided, which includes an excitation light source and a luminescent material. The luminescent material includes the luminescent material as described in the first aspect of the present invention.

Further, the excitation light source is a semiconductor chip with an emission peak wavelength range of 400-470 nm.

To sum up, embodiments of the present invention provide a luminescent material and a luminescent device including the luminescent material. The luminescent material includes an inorganic compound with the composition formula A _a E _e G _g M _m X _x . By adding the inorganic compound The selection of element types and contents provides a more stable environment for the luminescent center of the luminescent material to achieve enhanced light efficiency and thermal stability, as well as effective control of luminescent characteristics and spectral performance, and can make doping The absorption efficiency of heterogeneous elements in the excitation wavelength range is improved, thereby promoting the improvement of emission intensity and external quantum efficiency. The inorganic compound provided by the embodiment of the present invention can produce green light emission with a peak wavelength range of about 510-520 nm when excited by light in the 400-470 nm band. The emission intensity is high, the half-peak width is narrow, and it is excited with the blue LED chip. It has good application prospects in fields such as backlight sources for ultra-high color gamut displays.

Description of drawings

Figure 1 is a schematic structural diagram of a light-emitting device according to an embodiment of the present invention;

Figure 2 is an XRD diffraction pattern of the luminescent material sample prepared in Example 1 of the present invention;

Figure 3 is the excitation and emission spectrum of the luminescent material sample prepared in Example 1 of the present invention; Figure 3(a) is the 517nm excitation spectrum of the luminescent material sample prepared in Example 1; Figure 3(b) is the 517nm excitation spectrum of the luminescent material sample prepared in Example 1 The 450nm excitation emission spectrum of the luminescent material sample.

Explanation of reference symbols:

1-semiconductor chip, 2-glue and luminescent material, 3-pins, 4-base, 5-plastic lens.

Detailed ways

In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the specific embodiments and the accompanying drawings. It should be understood that these descriptions are exemplary only and are not intended to limit the scope of the invention. Furthermore, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily confusing the concepts of the present invention.

In an embodiment of the present invention, a luminescent material is provided. The luminescent material includes an inorganic compound. The inorganic compound includes A element, E element, G element, M element and X element. The composition formula is A _a E _e G _g M _{m _} The G element includes one or both of Si and Ge elements, and at least includes Si element; the M element includes one or two of O, N and F elements, and at least includes O element, and the The X element includes one or two of Mn, Eu and Ce elements, and at least contains the Mn element; the inorganic compound has the same crystal structure as LaAl ₃ SiO ₈ . LaAl ₃ SiO ₈ is a new type of crystal structure. Mn ²⁺ mainly occupies the four-coordinated Al ³⁺ position to emit light. In the luminescent material provided in the embodiment of the present invention, the trivalent rare earth element La ³⁺ that can be used as A Y ³⁺ /> Gd ³⁺ /> Lu ³⁺ /> The ionic radii are similar, and as an important part of the LaAl ₃ SiO ₈ -type crystal structure, they can be substituted for each other without changing the matrix structure, and the luminescent properties can be adjusted as needed. In this type of material system, there is a mutual substitution phenomenon between the E element and the G element, which can effectively achieve spectral shift and basically maintain the phase purity of the host material. However, due to the difference in their radii, the overall unit cell will expand or shrink. , when the substitution concentration increases, it will cause greater lattice distortion, which is not conducive to maintaining the stability of the structure. Therefore, the A element may also include, but is not limited to, tetravalent transition metal elements (such as Hf, Zr, Ti, etc.), divalent alkaline earth metal elements (such as Ba, Sr, Ca, etc.) and monovalent alkali metal elements (K, Na , Li et al.). These elements can be substituted accordingly according to the type of rare earth elements in element A to alleviate the lattice distortion caused by the substitution of elements E and G. Taking LuAl ₃ SiO ₈ as an example, when the small radius Si ⁴⁺ /> Partial replacement of large radius Al ³⁺ /> When , you can use Ba ²⁺ Sr ²⁺ /> Ca ²⁺ /> The substitution of Lu ³⁺ suppresses excessive shrinkage of the unit cell on the basis of balancing charges. For LaAl ₃ SiO ₈ , it can be replaced with Sr ²⁺ and Ba ²⁺ that have a larger ion radius than La ³⁺ to reduce the distortion of the matrix lattice and provide a more stable environment for the luminescence center. This results in enhanced light efficiency and improved thermal stability. Ga, In and Al in the E element are in the same main group and have similar element properties. The four-coordinated ionic radius is In ³⁺ /> Ga ³⁺ /> Close to Mn ²⁺ /> According to needs, appropriate In or Ga can be used to replace Al, and the unit cell parameters and crystal field characteristics can be adjusted to achieve control of the luminescence characteristics. Si ⁴⁺ /> in G element and Ge ⁴⁺ /> The properties of the elements are similar, and when Ge partially replaces Si, it will not cause major structural distortion. The Ge-Si substitution ratio can be adjusted as needed to achieve effective adjustment of spectral performance. Moreover, Al ³⁺ , Si ⁴⁺ and O ^{2- form} [AlO ₄ ] and [SiO ₄ ] tetrahedrons respectively, constituting the structural framework of LaAl ₃ SiO ₈ -type materials, and providing a source of light for Mn ²⁺ in the four-coordinated crystal field. Suitable grid environment. In the M element, the substitution of O, N, and F takes advantage of the fact that the difference in electronegativity of anions affects the crystal field environment of the luminescent center to achieve controllable tuning of the spectrum. The doping of Eu or Ce elements in the X element uses energy transfer to increase the absorption efficiency of the original single-doped Mn in the excitation wavelength range, thus promoting the improvement of emission intensity and external quantum efficiency.

According to some embodiments, the values of each element in the composition formula of the inorganic compound can be: 0.8≤a≤1.2, 2.2≤e≤3.2, 0.8≤g≤1.8, 7.8≤m≤8.2, 0.001≤x≤0.3 . Within this condition range, the luminescent material can basically maintain the same crystal structure as LaAl ₃ SiO ₈ . Preferably, 2.5≤e≤3, 0.8≤g≤1.5, 2.8≤c≤3.2. By refining the value range of E elements and G elements and the maximum mutual substitution amount between EG elements, the only substitution method is clarified, that is, within the above value range, the E and G contents can be lower and higher than the corresponding stoichiometry respectively. Ratio, it can be regarded as the E element is partially replaced by the G element, ultimately achieving a spectral shift.

According to some embodiments, the molar percentage of La, Y, Gd or Lu element in element A is b, and 50%≤b≤100%. Partial substitution of rare earth elements in element A with divalent alkaline earth metal elements (such as Ba, Sr, Ca, etc.) can effectively balance the excess charges generated by the substitution between E-G, but excessive substitution will cause the collapse of the main structure. , therefore the substitution amount of La, Y, Gd and Lu in element A needs to be limited to less than 50%. Controlling the ratio of E and G elements can change the crystal field intensity around the luminescence center and achieve directional movement of the spectrum. Moreover, E and G are non-equivalent substitutions, which will cause an increase in lattice defects such as vacancies as the doping amount increases. Therefore, in When the molar ratio of E and G elements is c, 1.7 ≤ c ≤ 3.5, it can not only ensure a purer phase structure, but also obtain fewer lattice defects, thus having better luminous efficiency and thermal stability.

According to some embodiments, the values of a, b, e and g satisfy: 0.8≤a(1-b):[2-(eg)]/2≤1.2. Among them, a(1-b) is the content of elements other than La, Y, Gd and Lu in element A. It can be regarded as the pure La, Y, Gd and Lu rare earth elements in the original position of element A are replaced by other low-priced elements in the same lattice. The amount of substitution, and [2-(eg)]/2 represents the content of the tetravalent G element replacing the trivalent E element. The above two substitution methods generate excess negative charges and positive charges respectively. In order to achieve charge balance and avoid excessive vacancies, interstitials and other lattice defects, the concentrations of the two substitution methods need to match each other. Too much or too little will introduce impurity phases, thus affecting the luminescence performance of Mn ²⁺ . Therefore, under the conditions of 0.8≤a(1-b):[2-(eg)]/2≤1.2, the host lattice defect content is relatively small, the crystal structure is more stable, and the luminous intensity and thermal stability properties are improved. promote.

According to some embodiments, the element A must contain element La. Due to the large ionic radius of La, the corresponding unit cell parameters of the new matrix structure are also larger. Therefore, when the EG element is substituted, the lattice shrinkage has a small impact on the overall unit cell. On the basis of maintaining the pure phase On the other hand, the replaceable concentration is larger and the spectral adjustment performance is better. In addition, in systems containing La, the lattice distortion caused by Mn ²⁺ entering the E element lattice has less impact on the stability of the overall unit cell structure, the doping concentration is larger, and the luminous intensity is higher.

According to certain embodiments, the A elements are La and Sr elements. The pure La system is selected as the rare earth element. The original volume of the overall unit cell is large and the main phase is relatively pure, which is conducive to subsequent structural optimization through element doping and other methods. The ionic radius of Sr ²⁺ is larger than that of La ³⁺ . When element substitution is performed, it can effectively slow down the lattice distortion caused by the substitution of E element by G element. Therefore, when the A element is La and Sr, it will replace and cooperate with the EG element to have better luminous intensity.

According to some embodiments, the E element is an Al element and the G element is a Si element. The ion radii of Al and Si elements are relatively small, the three-dimensional network structure composed of [AlO ₄ ] and [SiO ₄ ] tetrahedrons is relatively stable, and Al and Si occupy the same lattice position, which means that the mutual ratio adjustment range Larger, can be arranged in disorder. Moreover, Al and Si belong to adjacent main group elements of the same period, have similar chemical properties and relatively stable valence states. When they substitute for each other, the degree of lattice distortion caused to the matrix structure is small.

According to some embodiments, the A element is one or two of La, Y, Gd and Lu elements. The A element adopts the pure rare earth element system of La, Y, Gd and Lu. The radius difference is small and the chemical properties are similar. Their mutual substitution will not cause large structural distortion. It can be regarded as a similar crystal structure, and Mn ²⁺ is used as the After the luminous center, the overall luminous performance is better.

According to some embodiments, the molar ratio of the E element to the G element is c, 1.7≤c≤3.5. The content of E element and G element in this ratio can keep the matrix structure of the above-mentioned pure rare earth aluminosilicate phosphor relatively stable and the luminous intensity is high.

According to some embodiments, in the LaAl ₃ SiO ₈ -type structural material, the La element position can be partially or completely replaced by other trivalent ions, including but not limited to Y ³⁺ , Gd ³⁺ , Lu ³⁺ , Sc ³⁺ , Sm The chemical composition formula formed by rare earth ions such as ³⁺ , Dy ³⁺ , and Tb ³⁺ can be regarded as the same crystal structure as LaAl ₃ SiO ₈ . In addition, under the above conditions, if the stoichiometric ratio of the elements A, E, G, and M does not strictly follow the relationship of 1:3:1:8, the main crystal structure or the basic performance of luminescence will not be changed. , are regarded as having the same crystal structure as LaAl ₃ SiO ₈ .

In embodiments of the present invention, a method for preparing the above-mentioned luminescent material is also provided, which method includes the following steps:

According to the molecular formula A _a E _e G _{g M m} The raw materials are ground and mixed to obtain a raw material mixture.

Put the ground raw material mixture into a high-temperature furnace and pass N ₂ into it; then heat it up to 1250-1500°C at a heating rate of 1-15°C/min, and keep it at 1250-1500°C for 2-10 hours. The furnace is cooled to room temperature to obtain a sintered body; preferably, the heating rate of the high-temperature furnace is 5-8°C/min.

After grinding the cooled sintered body, the finished product of the luminescent material is obtained through the steps of water washing, sieving and drying.

In an embodiment of the present invention, a light-emitting device is also provided. The light-emitting device includes an excitation light source and a luminescent material. The luminescent material includes the luminescent material involved in the above embodiments.

Preferably, the excitation light source is a semiconductor chip with an emission peak wavelength range of 400-470 nm. The luminescent material has a characteristic excitation peak at 450 nm, and in this wavelength range, the excitation efficiency is high.

Preferably, the luminescent material also includes phosphors, quantum dot materials, semiconductor chips, etc. with an emission wavelength range of 620-680 nm. The color gamut of the light-emitting device can be effectively improved by using the luminescent material involved in the above embodiments and the 620-680 nm phosphor, quantum dot material and semiconductor chip for composite packaging. The luminescent materials involved in the above embodiments are used in conjunction with the above excitation light source and the above materials, so that the luminescent device emits light with high luminous efficiency and high color rendering to meet the application needs in fields such as ultra-high color gamut liquid crystal display backlight sources.

In an embodiment of the present invention, a light-emitting device including the above-mentioned luminescent material is also provided. The light-emitting device includes an excitation light source and the luminescent material involved in the above embodiment. Figure 1 shows a schematic structural diagram of the light-emitting device, as shown in Figure 1 As shown, the excitation light source is, for example, a semiconductor chip 1 with an emission peak wavelength range of 400-470 nm. The semiconductor chip 1 is placed on the base 4. Glue and luminescent material 2 wrap the semiconductor chip 1 inside. The outer cover of the semiconductor chip 1 There is a plastic lens 5, and pins 3 are led out from both ends of the base 4. In the light-emitting device provided by this embodiment of the present invention, the luminescent material has higher luminous intensity when excited by the blue light chip, and can meet the application needs in the field of backlight sources for ultra-high color gamut displays.

Specific examples and comparative examples are described below.

Comparative example 1

The compound with the molecular formula SrAl _1.98 Si ₂ O _7.99 Mn _0.02 (composition elements are shown in Table 1) is sintered using a high-temperature solid-state method, and its luminescence intensity under 450nm blue light excitation is set to 100.

Example 1

Using La ₂ O ₃ , Al ₂ O ₃ , SiO ₂ , and MnCO ₃ as original powders, in order to obtain a compound represented by the composition formula LaAl _2.98 SiO _7.99 Mn _0.02 (composition elements are shown in Table 1), weigh 43.19% of La ₂ O ₃ , 40.28% by weight Al ₂ O ₃ , 15.93% by weight SiO ₂ and 0.61% by weight MnCO ₃ raw materials, grind and mix the above raw materials, put them into a crucible, and sinter them in a high-temperature furnace at 1350°C 4 hours; the furnace is cooled to room temperature to obtain a sintered sample; the sample is ball milled, washed and sieved to obtain the luminescent material. The luminescent material obtained in Example 1 was detected using X-ray spectroscopy (Co target). The XRD diffraction pattern is shown in Figure 2. The 2θ diffraction angles corresponding to the three strong peaks are 27.74°, 35.32° and 33.16° respectively. The other intensities far lower than the three strong peaks are background impurity peaks of the instrument or certain impurity phase peaks. The main phase crystal structure in Example 1 is still LaAl ₃ SiO ₈ . It should be noted here that when the diffraction angle positions corresponding to the three strong peaks in the XRD pattern of other luminescent materials are the same as those of the present invention, the corresponding diffraction angle positions and relative intensities of other peaks are slightly changed, or the XRD diffraction peak positions of other luminescent materials The overall left or right shift due to the expansion or contraction of the unit cell is considered to be the same type of crystal structure as the luminescent material described in the present invention. Using a fluorescence spectrometer to analyze Example 1, the luminescent material has a narrow-spectrum luminescence of green spectrum under the excitation of 450 nm blue light, with a peak wavelength of 517 nm and a relative luminescence intensity of 357. Figure 3 shows the excitation and emission spectra of the luminescent material sample prepared in this embodiment. Figure 3(a) is the 517nm excitation spectrum of the luminescent material sample prepared in this embodiment. Figure 3(b) is the The 450nm excitation emission spectrum of the luminescent material sample prepared in the Example. As can be seen from Figure 3, the luminescent material has a high absorption intensity in the blue light region, an emission spectrum ranging from 500 to 560nm, and a half-peak width of about 35nm.

Example 2

Using SrCO ₃ , La ₂ O ₃ , Al ₂ O ₃ , SiO ₂ , and MnCO ₃ as original powders, in order to obtain a compound represented by the composition formula (La _0.8 Sr _0.2 )Al _2.78 Si _1.2 O _7.99 Mn _0.02 (compositional elements are shown in Table 1 (as shown), weigh the corresponding raw materials according to the stoichiometric ratio, sinter them in a high-temperature furnace and perform post-processing to obtain the luminescent material. The luminescent material obtained in Example 2 was analyzed using a fluorescence spectrometer. The material has a narrow-spectrum luminescence of green spectrum when excited by 450 nm blue light, with a peak wavelength of 516 nm and a relative luminescence intensity of 314.

Example 3

Using SrCO ₃ , La ₂ O ₃ , Al ₂ O ₃ , SiO ₂ , and MnCO ₃ as original powders, in order to obtain a compound represented by the composition formula (La _0.7 Sr _0.3 ) Al _2.68 Si _1.3 O _7.99 Mn _0.02 (composition elements are shown in Table 1 (as shown), weigh the corresponding raw materials according to the stoichiometric ratio, sinter them in a high-temperature furnace and perform post-processing to obtain the luminescent material. The luminescent material obtained in Example 3 was analyzed using a fluorescence spectrometer. The material has a narrow-spectrum luminescence of green spectrum when excited by 450 nm blue light, with a peak wavelength of 515 nm and a relative luminescence intensity of 298.

The preparation process of Example 4-29 is similar to the preparation process of Example 1-3 above. The original powder used and the finally obtained compound are as shown in Table 1. The compositions of Comparative Example 1 and Examples 1-29 and the emission peak wavelength and relative luminescence intensity under excitation by a 450 nm light source are shown in Table 1.

Table 1 Comparative Examples and Chemical Formulas and Luminescent Properties of Each Example

As can be seen from Table 1, compared with the comparative example, the luminescent materials provided by the embodiments of the present invention have significantly improved luminous intensity when excited by the blue light chip, solving the problem of low luminous efficiency of narrow-band green phosphors in the prior art. problem to meet the application needs in the field of backlight for ultra-high color gamut display.

According to the data in Table 1 above, it can be seen that the emission peak wavelengths of the luminescent materials with the composition of the present application in Examples 1-29 are all in the wavelength range of 510 to 520nm; according to Examples 2-6, it can be seen that using Sr, The Si element replaces La and Al elements at the same time, which can effectively adjust the peak wavelength of the emission spectrum. Without changing the original LaAl ₃ SiO ₈ matrix phase structure, compared with Examples 24-29, the above element combination is used The overall relative emission intensity of the luminescent material obtained through the scheme is relatively high. Furthermore, when the substitution atomic ratios between Sr-La and Si-Al match each other, i.e., a(1-b):[2-(eg)]/2≈1, the luminescence intensity reaches the peak, which is due to the large radius The double substitution process of Sr ²⁺ replacing small radius La ³⁺ and small radius Si ⁴⁺ replacing large radius Al ³⁺ can not only reduce the lattice distortion caused by single substitution, but also maintain charge balance and avoid The introduction of structural defects such as oxygen vacancies affects the valence state stability of Mn ²⁺ , thereby alleviating the decrease in the actual doping concentration of Mn ²⁺ and the corresponding luminescence intensity. According to Examples 1 and 8-14, it can be seen that the relative luminous intensity of the luminescent material in which the A element is a pure rare earth element can still maintain a high level. At the same time, different rare earth ions occupying the A position will have different effects on the relative luminous intensity and peak wavelength. Influence, different elements can be combined according to actual needs.

To sum up, embodiments of the present invention relate to a luminescent material and a luminescent device containing the luminescent material. The luminescent _material contains an inorganic compound with a composition formula of A _a E _e G _g M _m The selection of element types and contents provides a more stable environment for the luminescent center of the luminescent material to achieve enhanced light efficiency and thermal stability, as well as effective control of luminescent characteristics and spectral performance, and allows doping The absorption efficiency of elements in the excitation wavelength range is increased, thereby promoting the improvement of emission intensity and external quantum efficiency. The inorganic compound provided by the embodiment of the present invention can produce green light emission with a peak wavelength range of about 510-520 nm when excited by light in the 400-470 nm band. The emission intensity is high, the half-peak width is narrow, and it is excited with the blue LED chip. It has good application prospects in fields such as backlight sources for ultra-high color gamut displays.

It should be understood that the above-described specific embodiments of the present invention are only used to illustrate or explain the principles of the present invention, and do not constitute a limitation of the present invention. Therefore, any modifications, equivalent substitutions, improvements, etc. made without departing from the spirit and scope of the present invention shall be included in the protection scope of the present invention. Furthermore, it is intended that the appended claims of the present invention cover all changes and modifications that fall within the scope and boundaries of the appended claims, or equivalents of such scopes and boundaries.

Claims (12)

1. A light-emitting material characterized by comprising an inorganic compound including an a element, an E element, a G element, an M element, and an X element;

the A element comprises at least one of La, Y, gd and Lu elements; the E element comprises one or two of Al, ga and In elements, and at least comprises an Al element; the G element comprises one or two of Si and Ge elements and at least comprises Si element; the M element comprises one or two of O, N and F elements and at least comprises O element, and the X element comprises one or two of Mn, eu and Ce elements and at least comprises Mn element; the composition formula of the inorganic compound is A _a E _e G _g M _m X _x Wherein a is more than or equal to 0.8 and less than or equal to 1.2, e is more than or equal to 2.2 and less than or equal to 3.2,0.8, g is more than or equal to 1.8,7.8, m is more than or equal to 8.2,0.001 and x is more than or equal to 0.3;

the inorganic compound has a structure similar to LaAl ₃ SiO ₈ The same crystal structure.

2. The luminescent material according to claim 1, wherein e.ltoreq.2.5.ltoreq.3, g.ltoreq.0.8.ltoreq.1.5.

3. The luminescent material according to claim 2, wherein the molar percentage of the La, Y, gd and Lu elements in the A element is b, and b is 50% or more and 100% or less.

4. A luminescent material as claimed in claim 3, wherein the molar ratio of the element E to the element G is c, c being 1.7.ltoreq.c.ltoreq.3.5.

5. The luminescent material as claimed in claim 4, wherein 0.8.ltoreq.a (1-b) [2- (e-g) ]/2.ltoreq.1.2.

6. The light-emitting material according to claim 5, wherein the element a contains La.

7. The luminescent material according to claim 6, wherein the A element is La or Sr element.

8. The light-emitting material according to any one of claims 1 to 7, wherein the E element is an Al element and G is an Si element.

9. The light-emitting material according to any one of claims 1 to 4, wherein the element a is one or two of La, Y, gd, and Lu.

10. The luminescent material according to claim 4, wherein c is 2.8.ltoreq.c.ltoreq.3.2.

11. A light-emitting device comprising an excitation light source and a luminescent material, characterized in that the luminescent material comprises a luminescent material as claimed in any one of claims 1-10.

12. The light-emitting device according to claim 11, wherein the excitation light source is a semiconductor chip having an emission peak wavelength in a range of 400 to 470 nm.