CN116259615A - Wafer subarray interconnection structure and wafer subarray of multi-material system composite integration - Google Patents

Abstract

The invention discloses a multi-material system composite integrated wafer sub-array interconnection structure and wafer sub-array, belonging to the technical field of antennas and microwaves. The invention includes a structural carrier board, a low-loss main circuit power splitter, an HTCC substrate and interconnected fur buttons; the structural carrier board includes a structural carrier board cavity, a chip built-in cavity, and a welding surface; the low-loss main circuit power splitter is embedded in the structural carrier board In the cavity; one side of the HTCC substrate is welded with the structural carrier and the low-loss main circuit power divider, and the functional chips and components on it are embedded in the built-in cavity of the chip; the low-frequency, power supply, and radio frequency signals in the board are realized through the vertical transition structure. Interconnection, through gold wire and functional chip signal interconnection, through BGA interconnection layer and T/R component internal signal interconnection; interconnection buttons are embedded in the structural carrier board, and are crimped and interconnected with the HTCC substrate. The invention has small volume, light weight, high integration, high thermal conductivity, high reliability, low loss and good consistency, and is suitable for highly integrated and high-density phased array antennas.

Description

Wafer sub-array interconnection structure and wafer sub-array integrated with multi-material system

technical field

The invention belongs to the field of wireless and microwave technologies, and in particular relates to a wafer sub-array interconnection structure and a wafer sub-array compounded and integrated with multi-material systems.

Background technique

With the development of phased array antenna, its integration level is getting higher and higher. In recent years, microsystem technology and wafer integration technology have been greatly developed and applied in phased array antennas. Antenna arrays integrated with these technologies have been shrinking in unit pitch and section height. The comprehensive interconnection layer used for signal transmission and integrated carrier, its usable area and thickness are continuously compressed, and its design is greatly restricted and challenged. In addition, the interconnection network in the wafer integrated millimeter-wave sub-array needs to meet the requirements of light weight, low loss, large bandwidth, high-density transmission of high and low frequency signals, the thermal expansion coefficient of the substrate and the RF front-end of the wafer (silicon or other wafers) material) matching requirements.

In the traditional phased array radar system, high and low frequency cables and electrical connectors are often used to realize the interconnection of radio frequency, power supply and control signals between the antenna and T/R components and other stand-alone units. With the increase of source channel density, this traditional interconnection method has been difficult to meet the needs of high-density interconnection of the array. The design concepts of light weight, high integration, low profile and high reliability of the active phased array antenna are contrary. Due to the high frequency band, small size, many components, and high integration density of the millimeter wave antenna array, it involves the system transmission of the four major links of radio frequency, control, power supply, and heat, so it has low loss, high broadband performance, high signal density, and high thermal conductivity. The comprehensive network is a problem that needs to be considered in the process of design and implementation.

Contents of the invention

The purpose of the present invention is to provide a wafer sub-array interconnection structure and wafer sub-array with multi-material system compounding and multi-function integration. The comprehensive interconnection design scheme has small size, light weight, high integration, high thermal conductivity, high Reliability, low loss, and good consistency are suitable for high-integration, high-density phased array antennas.

Specifically, on the one hand, the present invention provides a multi-material system compound integrated wafer sub-array interconnection structure, including a structural carrier board, a low-loss main circuit power divider, an HTCC substrate, and an interconnection button;

The structural carrier includes a structural mounting part, a structural carrier cavity, a chip built-in cavity, a welding surface and a cover plate; the structural mounting part is used to fix the structural carrier;

The low-loss main road power divider is provided with a stripline-to-microstrip line structure and a radio frequency general port connector; the stripline-to-microstrip line structure is used as a radio frequency splitter; the low-loss main road power divider is embedded in In the structural carrier cavity;

One side of the HTCC substrate and the structural carrier are welded and interconnected through the welding surface, and are welded to the low-loss main circuit power divider; the surface of the HTCC substrate is provided with functional chips, components, interconnected button crimping plates, and gold wires. Bonding pads and BGA interconnection layer, the functional chips and components are embedded in the chip built-in cavity of the structural carrier board, and the chip built-in cavity is sealed by the cover plate; the HTCC substrate is provided with a radio frequency wiring layer and a power distribution layer and low-frequency control layer; the matching structure line is set on the RF wiring layer, and is interconnected with the low-loss main power divider through gold wire bonding; the low-frequency signal, power signal, and RF signal in the HTCC substrate are interconnected through a vertical transition structure , realizing signal interconnection with the functional chip through gold wire bonding, and realizing signal interconnection with the T/R component placed on the HTCC substrate through the BGA interconnection layer;

The interconnected fur button is embedded in the structural carrier board, and is crimped and interconnected with the HTCC substrate through the interconnected fur button crimping plate, and the external control signal and power signal are transmitted into the HTCC substrate.

Further, the radio frequency main port connector and the stripline-to-microstrip line structure are connected to the outside from the cavity on the structural board by means of gold wire bonding.

Further, the structural installation part is column-shaped, and screw installation holes are arranged on it.

Further, when the low-loss power divider 2 of the main circuit board is embedded in the cavity of the structural carrier board, it is flush with the welding surface.

Further, when the multi-material system composite integrated wafer sub-array transmits signals, the radio frequency signal enters the low-loss main circuit power divider from the radio frequency master connector, enters the radio frequency wiring layer of the HTCC substrate through the matching structure, After entering the functional chip, it is transmitted to the BGA interconnection layer to provide RF excitation signals for T/R components; the control signal and power signal are connected to the HTCC substrate through the interconnection button, and enter the low-frequency control layer and power distribution layer through the vertical transition structure. Functional chips and T/R components.

Further, the HTCC substrates are several independent HTCC substrates.

Further, the HTCC substrate and structural carrier are made of high thermal conductivity materials.

Further, the structural carrier adopts a material with a thermal expansion coefficient close to that of the HTCC substrate.

Further, the structural installation part is made of heat dissipation material.

On the other hand, the present invention also provides a multi-material system composite integrated wafer sub-array, including the above-mentioned multi-material system composite integrated wafer sub-array interconnection structure.

The beneficial effects of the multi-material system composite integrated wafer sub-array interconnection structure and wafer sub-array of the present invention are as follows:

Small size and light weight: integrated design concept, using the form of HTCC substrate surface mount bare chip, integrating various functional chip modules, realizing the signal interconnection of radio frequency, low frequency and power supply in the HTCC substrate through gold wire bonding, realizing integration Design; the HTCC substrate and the structural carrier are welded and interconnected, and the bare chip is embedded in the cavity of the structural carrier, which not only saves the structural size of the RF active functional module, but also meets the airtight requirements of the chip, effectively realizing the miniaturization of the integrated network , lightweight.

High thermal conductivity: select high thermal conductivity HTCC substrate and structural carrier, conduct the heat generated by T/R components to the HTCC carrier through the BGA layer for temperature uniformity, and then transfer the heat to the structural carrier through the soldering surface; and through The structural mounting column made of heat dissipation material conducts heat to the cold plate, realizing the effective transmission of heat from T/R components.

High reliability: Due to the difference in expansion coefficient between the HTCC substrate and the structural carrier, the HTCC substrate is split into multiple independent HTCC substrates and welded on the structural carrier. Multiple independent HTCC substrates effectively release the welding stress with the structural carrier, reduce the degree of deformation of the wafer sub-array during the temperature change process, and ensure the reliability of the wafer sub-array and its external interconnection; at the same time, the highly integrated feeder Electrical technology greatly reduces or eliminates the interconnection devices between components, improving the reliability of the system.

Low loss: Due to the large RF loss of the HTCC substrate, in order to reduce the loss of the RF link, a low-loss main circuit power splitter is used in combination with the HTCC substrate, and the RF main channel transmission adopts a low-loss transmission structure (for example, microwave multi Low-loss main power splitter made of laminate, micro-coaxial, etc.), the low-loss transmission structure compared with HTCC substrate, the loss ratio is less than 1/2, from the strip line of the low-loss main power splitter to the micro The stripline structure is used as the RF port, and at the RF port, the interconnection between the low-loss main power splitter and the HTCC substrate is realized through gold wire bonding, welding, etc., which realizes the connection between the functional chip and the HTCC substrate. The interconnection design between them reduces the loss of the entire radio frequency link.

Low thermal expansion rate: Compared with the integrated interconnection layer realized by traditional microwave boards, the present invention has a lower expansion coefficient, which can support the integrated installation of packaged antennas with larger size and lower expansion coefficient materials; The front-end of wafer integration is integrated into the multi-material system composite integrated wafer sub-array interconnection structure of the present invention.

The multi-material system composite integrated wafer sub-array interconnection structure of the present invention has good electrical performance consistency, and is suitable for high-integration, high-density phased array antennas: it adopts in-board radio frequency interconnection, gold wire bonding, processing and assembly With high precision and simple form, it eliminates the inconsistency caused by blind mating interconnection and the connector itself, making the system electrical performance consistent.

Description of drawings

Fig. 1 is a three-dimensional perspective view of an embodiment of the present invention.

Fig. 2 is a perspective view (upper surface) of a structural carrier of an embodiment of the present invention.

Fig. 3 is a perspective view (lower surface) of the structural carrier of the embodiment of the present invention.

Fig. 4 is a schematic diagram of a low-loss main power splitter according to an embodiment of the present invention.

Fig. 5 is a schematic diagram (upper surface) of an HTCC substrate according to an embodiment of the present invention.

Fig. 6 is a schematic diagram (lower surface) of an HTCC substrate according to an embodiment of the present invention.

FIG. 7 is a schematic diagram of internal stacking and signal interconnection of an HTCC substrate according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of a radio frequency interconnection structure between different materials according to an embodiment of the present invention.

FIG. 9 is a schematic diagram of heat conduction in an embodiment of the present invention.

Marks in the figure: 1-structural carrier board, 2-low loss main circuit power divider, 3-HTCC substrate, 4-interconnection fur button, 5-structural mounting part, 6-threaded mounting hole, 7-chip built-in cavity, 8 -Welding surface, 9-structure carrier cavity, 10-radio frequency general port connector, 11-stripline to microstrip line structure, 12-functional chip, 13-components, 14-interconnection button crimping plate, 15- Gold wire bonding pad, 16-BGA interconnect layer, 17-T/R component, 18-BGA ball, 19-RF wiring layer, 20-power distribution layer, 21-low frequency control layer, 22-vertical transition structure, 23-gold wire, 25-matching structure, 28-cover plate.

Detailed ways

The present invention will be further described in detail below in conjunction with the embodiments and with reference to the accompanying drawings.

One embodiment of the present invention is a multi-material system composite integrated wafer sub-array interconnection structure, as shown in Figure 1, including a structural carrier 1, a low-loss main circuit power divider 2, an HTCC substrate 3, and interconnected fur buttons 4.

As shown in FIGS. 2 and 3 , the structural carrier 1 includes a structural mounting part 5 , a structural carrier cavity 9 , a chip built-in cavity 7 , a cover plate 28 , and a large-area soldering surface 8 distributed on the bottom surface. Preferably, in another embodiment, the structural installation part 5 is columnar, and a threaded installation hole 6 is provided on it.

The low-loss main circuit power divider 2 is embedded in the structure carrier cavity 9 . Preferably, the upper surface of the low-loss main circuit power splitter 2 placed in the structural carrier cavity 9 is flush with the surface of the welding surface 8 of the structural carrier 1, so that the low-loss main circuit power splitter 2 and the structural carrier 1 can be Solder with HTCC substrate 3 together. One side of the HTCC substrate 3 and the structural carrier 1 are welded and interconnected through the welding surface 8, and the side of the HTCC substrate welded to the structural carrier 1 is also divided into the low-loss main circuit embedded in the structural carrier cavity 9 of the structural carrier 1. The device 2 is welded to ensure the consistency of the substrate ground plane of the low-loss main circuit power divider 2 and the HTCC substrate. As shown in FIG. 4 , the low-loss main power divider 2 is provided with a stripline-to-microstrip structure 11 and a radio frequency main interface connector 10 for external connection. The stripline-to-microstrip structure is used as the RF port. The radio frequency bus connector 10 and the stripline-to-microstrip line structure 11 can be connected to the outside from the cavity 9 on the structural board, for example, through gold wire bonding and the like.

The surface of the HTCC substrate 3 is provided with various functional chips 12 , components 13 , interconnection pads 14 , gold wire bonding pads 15 and BGA interconnection layers 16 . The functional chip 12 and components 13 are embedded in the chip built-in cavity 7 of the structural board 1 , and the chip built-in cavity 7 is sealed by the cover plate 28 . For example, as shown in Figures 5 and 6, the HTCC substrate 3 includes various functional chips 12 distributed on the upper surface, various components 13 (such as capacitors, resistors, etc.), interconnected fur button crimping pads 14, gold wire bonding Pads 15, and BGA interconnection layers 16 distributed on the lower surface.

As shown in FIG. 7 , the HTCC substrate 3 is provided with a radio frequency wiring layer 19 , a power distribution layer 20 and a low frequency control layer 21 . The line of the matching structure 25 interconnected with the low-loss main circuit power divider 2 through the RF port (i.e., the stripline to microstrip line structure 11) is arranged on the radio frequency wiring layer, and is connected to the low-loss main circuit through gold wire bonding. The power dividers 2 are interconnected. For example, in another embodiment, the HTCC substrate 3 includes 24 layers of circuits, of which layers 1 to 8 are radio frequency wiring layers 19 , layers 9 to 14 are power distribution layers 20 , and layers 15 to 24 are low frequency control layers 21 .

In the multi-material system composite integrated wafer sub-array interconnection structure of the present invention, the radio frequency signal passes through the interconnection structure between different materials, and is transferred from the radio frequency port of the low-loss main circuit power divider 2 (i.e., stripline to microstrip line) The structure 11) is transferred into the plurality of HTCC substrates 3 via the matching structure 25. The low-frequency signal, power signal, and radio frequency signal in the HTCC substrate board 3 realize signal interconnection through the vertical transition structure 22, realize the signal interconnection with each functional chip 12 through the gold wire 23, and realize the signal interconnection through the BGA interconnection layer 16 (not shown in FIG. 7 ). The BGA ball 18 realizes signal interconnection with the T/R assembly 17 placed on the HTCC substrate 3 .

The interconnection button 4 is embedded in the structural carrier 1 , and is crimped and interconnected with the HTCC substrate 3 through the interconnection button crimping plate 14 , so that the control signals and power signals outside the wafer sub-array are transmitted into the HTCC substrate 3 .

Since the expansion coefficient of the HTCC substrate is different from that of the structural carrier, preferably, in another embodiment, the HTCC substrate is split into several independent HTCC substrates and welded on the structural carrier 1 . The use of multiple independent HTCC substrates effectively releases the welding stress caused by the different thermal expansion coefficients of the HTCC substrate 3 and the structural carrier 1, reduces the degree of deformation of the wafer sub-array during the temperature change process, and ensures the protection of the wafer sub-array and its external appearance. Reliability of interconnection; at the same time, the highly integrated power feeding technology greatly reduces or eliminates the interconnection devices between various components, which improves the reliability of the system.

The assembly method of the multi-material system composite integrated wafer sub-array interconnection structure of the present invention is as follows:

As shown in Figures 1, 7, and 8, the low-loss main circuit power divider 2 is first welded in the structural carrier cavity 9, and the low-loss main circuit power divider 2 is first flush with the large-area welding surface 8 , and then several HTCC substrates 3 are welded on the structural carrier 1 through tooling. The welding here mainly ensures the RF interconnection structure between different materials such as the HTCC substrate 3, the structural carrier 1, and the low-loss main circuit power divider 2. The penetration rate of the grounding position. Finally, the functional chip 12 is set (for example, mounted) on the HTCC substrate 3 in the chip built-in cavity 7 of the structural carrier 1 , and gold wire bonding is performed, and finally sealed by the cover plate 28 .

Preferably, in another embodiment, as shown in FIG. 8, the stripline-to-microstrip line structure 11, the gold wire 23, the matching structure 25 of the HTCC substrate, and the The vertical transition structure 22 realizes effective matching of radio frequency signals between different materials. After the radio frequency signal enters the HTCC substrate 3 , it is transmitted on the radio frequency wiring layer 19 , enters various functional chips through the vertical transition structure 22 and the gold wire 23 , and is finally transmitted to the T/R component 18 . In-board RF interconnection and gold wire bonding are adopted, with high processing and assembly precision and simple form, which eliminates the inconsistency caused by blind mating interconnection and the connector itself, making the electrical performance of the system consistent.

The multi-material system composite integrated wafer sub-array interconnection structure of the present invention adopts the form of bare chips mounted on the surface of the HTCC substrate, integrates various functional chips, and realizes the signal interconnection of radio frequency, low frequency, and power supply in the HTCC substrate through gold wire bonding. Realize integrated design; HTCC substrate and structural carrier board are soldered and interconnected, and the bare chip is embedded in the cavity of the structural carrier board, which not only saves the structural size of the RF active functional module, but also meets the airtight requirements of the chip, effectively realizing the integrated The miniaturization and weight reduction of the network.

The signal flow in the multi-material system composite integrated wafer sub-array interconnection structure of the present invention is as follows:

When the multi-material system composite integrated wafer sub-array transmits signals, the radio frequency signal enters the low-loss main circuit power divider 2 from the radio frequency main port connector 10, and is transmitted to multiple HTCC substrates 3 through gold wires, etc., and passes through the matching structure. 25 enters the radio frequency wiring layer 19 of the HTCC substrate 3, enters the multi-function chip 12, and transmits to the BGA interconnection layer 16 to provide radio frequency excitation signals for the T/R component 17. The control signal and power signal are connected to the HTCC substrate 3 through the interconnection button 4, and enter the low-frequency control layer 21 and the power distribution layer 20 through the vertical transition structure 22 to provide power and control signals for various functional chips 12 and T/R components 17.

Preferably, in another embodiment, the HTCC substrate and the structural carrier are made of high thermal conductivity materials. The structural carrier 1 is made of a material with a thermal expansion coefficient close to that of the HTCC, and the optional materials include aluminum silicon, molybdenum copper, and the like. Preferably, in another embodiment, the structural installation part 5 is made of heat dissipation material. As shown in Figure 9, the heat generated by the T/R assembly 17 is conducted to the HTCC substrate 3 through the BGA ball 18 and the BGA interconnection layer 16. After the HTCC substrate 3 is uniformly heated, the heat is conducted to the structural carrier 1 through the welding surface, and then The temperature is uniformed through the structural carrier plate 1; and the structural mounting column is also used as a structural heat conduction column, and the heat is conducted to the external heat dissipation cold plate through the structural mounting column, which realizes the effective transmission of heat of the T/R component

Although the present invention has been disclosed above with preferred embodiments, the embodiments are not intended to limit the present invention. Any equivalent changes or modifications made without departing from the spirit and scope of the present invention also belong to the protection scope of the present invention. Therefore, the scope of protection of the present invention should be based on the content defined by the claims of this application.

Claims (10)

1. The wafer sub-array interconnection structure of the multi-material system composite integration is characterized by comprising a structure carrier plate, a low-loss main circuit power divider, an HTCC substrate and interconnection buttons;

the structure carrier plate comprises a structure mounting part, a structure carrier plate cavity, a chip built-in cavity, a welding surface and a cover plate; the structure mounting part is used for fixing the structure carrier plate;

the low-loss main power divider is provided with a strip line-microstrip line structure and a radio frequency main port connector; the strip line-microstrip line structure is used as a radio frequency split; the low-loss main path power divider is embedded in the structural carrier plate cavity;

one surface of the HTCC substrate is welded and interconnected with the structural carrier plate through the welding surface and is welded with the low-loss main path power divider; the surface of the HTCC substrate is provided with a functional chip, a component, an interconnection Mao Niu buckling and connecting disc, a gold wire bonding pad and a BGA interconnection layer, wherein the functional chip and the component are embedded in a chip built-in cavity of the structure carrier plate, and the chip built-in cavity is sealed through a cover plate; the HTCC substrate is provided with a radio frequency wiring layer, a power distribution layer and a low-frequency control layer; the circuit of the matching structure is arranged on the radio frequency wiring layer and is interconnected with the low-loss main circuit power divider through gold wire bonding; the signal interconnection of the low-frequency signals, the power supply signals and the radio frequency signals in the HTCC substrate board is realized through a vertical transition structure, the signal interconnection with the functional chip is realized through gold wire bonding, and the signal interconnection with the T/R assembly arranged on the HTCC substrate is realized through a BGA interconnection layer;

the interconnection hair button is embedded in the structural carrier plate, and is connected with the HTCC substrate in a crimping way through the interconnection Mao Niu buckling disc, so that external control signals and power signals are transmitted into the HTCC substrate.

2. The wafer sub-array interconnection structure compositely integrated by the multi-material system according to claim 1, wherein the radio frequency main port connector and the strip line-to-microstrip line structure are connected with the outside from the structure board-carrying cavity in a gold wire bonding mode.

3. The multi-material system composite integrated wafer sub-array interconnection structure according to claim 1, wherein the structure mounting portion is columnar, and screw mounting holes are formed in the structure mounting portion.

4. The wafer sub-array interconnection structure of the multi-material system composite integration according to claim 1, wherein the low-loss main circuit board power divider 2 is flush with the welding surface when embedded in the structural carrier cavity.

5. The multi-material system composite integrated wafer sub-array interconnection structure of claim 1, wherein when the multi-material system composite integrated wafer sub-array transmits signals, the radio frequency signals enter the low-loss main circuit power divider from the radio frequency main port connector, enter the radio frequency wiring layer of the HTCC substrate through the matching structure, enter the functional chip and then are transmitted to the BGA interconnection layer to provide radio frequency excitation signals for the T/R assembly; the control signal and the power signal are connected into the HTCC substrate through the interconnection button and enter the low-frequency control layer and the power distribution layer through the vertical transition structure to the functional chip and the T/R component.

6. The multi-material system composite integrated wafer sub-array interconnect structure of claim 1, wherein the HTCC substrates are a plurality of individual HTCC substrates.

7. The multi-material system composite integrated wafer sub-array interconnection structure of claim 1, wherein the HTCC substrate and the structural carrier are made of high thermal conductivity materials.

8. The multi-material system composite integrated wafer sub-array interconnection structure of claim 7, wherein the structural carrier is made of a material having a thermal expansion coefficient close to that of the HTCC substrate.

9. The multi-material system composite integrated wafer sub-array interconnection structure according to claim 1, wherein the structure mounting portion is made of a heat dissipation material.

10. A wafer subarray compositely integrated by a multi-material system, which is characterized by comprising the wafer subarray interconnection structure compositely integrated by the multi-material system according to any one of claims 1-9.

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