CN116247518A - Epitaxial wafers and semiconductor lasers - Google Patents

Abstract

The invention relates to the technical field of semiconductors, and discloses an epitaxial wafer and a semiconductor laser. The epitaxial wafer includes: a substrate; a functional layer, the functional layer is located on the substrate; wherein, at least part of the layer body in the functional layer is doped with Mg; a light emitting layer, the light emitting layer is located in the functional layer, and the functional layer is used to drive the light emitting layer glow. Through the above method, the present invention can increase the characteristic temperature of the laser using the epitaxial wafer of the present invention, and further improve its electro-optical conversion efficiency.

Description

Epitaxial wafers and semiconductor lasers

This application is a divisional application for the application number 201910009078.2, the application date is January 04, 2019, and the invention title is "Epitaxial Wafer and Semiconductor Laser".

technical field

The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer and a semiconductor laser.

Background technique

AlGaInP quaternary compound materials are widely used in high-brightness red light-emitting diodes and semiconductor lasers, and have become the mainstream materials for red light-emitting devices. However, compared with the AlGaAs material used in the early stage, the AlGaInP material system itself also has its disadvantages: the conduction band step of the AlGaInP/GaInP heterojunction is very small, with a maximum value of about 270meV, which is less than 350meV of the AlGaAs material, so the electronic barrier is relatively low , it is easy to form a leakage current, which increases the threshold current of the laser, especially in high temperature and high current operation. Moreover, due to alloy scattering, the thermal resistance of AlGaInP material is much higher than that of AlGaAs material, so more heat is generated during operation, which easily leads to excessively high junction temperature and cavity surface temperature. At the same time, the effective mass and density of states of carriers in AlGaInP materials are higher than those in AlGaAs materials, and a higher transparent current density is required for lasing. For the above reasons, the characteristic temperature of the laser using the AlGaInP material system is low, and the electro-optic conversion efficiency is low during continuous operation.

Contents of the invention

In view of this, the main technical problem to be solved by the present invention is to provide an epitaxial wafer and a semiconductor laser, which can increase the characteristic temperature of the laser using the epitaxial wafer of the present invention, and then improve its electro-optic conversion efficiency.

In order to solve the above-mentioned technical problems, a technical solution adopted by the present invention is: provide an epitaxial wafer, the epitaxial wafer includes: a substrate; a functional layer, the functional layer is located on the substrate; wherein, at least part of the functional layers are doped Doped with Mg; light-emitting layer, the light-emitting layer is located in the functional layer, the functional layer is used to drive the light-emitting layer to emit light, the functional layer includes a first functional layer and a second functional layer, the first functional layer, the light-emitting layer and the second functional layer are close to each other The direction of the substrate is stacked on the substrate in sequence. The first functional layer includes a first waveguide layer and a first confinement layer. The first waveguide layer is located on the side of the light-emitting layer away from the second functional layer. layer away from the side of the light-emitting layer, and the first waveguide layer and the first confinement layer are doped with Mg, the first confinement layer includes a first sub-confinement layer and a second sub-confinement layer, and the first sub-confinement layer is located in the first waveguide layer On the side away from the light-emitting layer, the second sub-confinement layer is located on the side of the first sub-confinement layer away from the first waveguide layer; wherein, the first sub-confinement layer is doped with Mg, and the second sub-confinement layer is doped with Zn.

In an embodiment of the invention, the Mg concentration in the first waveguide layer is smaller than the Mg concentration in the first confinement layer.

In an embodiment of the present invention, the first confinement layer further includes a barrier layer, and the barrier layer is located between the first sub-constraint layer and the second sub-constraint layer.

In one embodiment of the present invention, the barrier layer includes a first barrier layer and a second barrier layer, the first barrier layer is doped with Mg, the second barrier layer is doped with Zn, and the barrier layer is at least one layer of the first barrier layer A paired superlattice structure alternately stacked with at least one second barrier layer.

In an embodiment of the present invention, the first functional layer further includes a contact layer, the contact layer is located on the side of the second sub-constraint layer away from the first sub-constraint layer, and a transition layer is arranged between the contact layer and the second sub-constraint layer , the barrier layer and the transition layer are used to increase the distance between the contact layer and the light emitting layer; wherein the contact layer is doped with Zn.

In an embodiment of the invention, the barrier layer is made of undoped AlGaInP material.

In an embodiment of the present invention, the first functional layer is an N-type semiconductor layer, and the second functional layer is a P-type semiconductor layer; or the first functional layer is a P-type semiconductor layer, and the second functional layer is an N-type semiconductor layer.

In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a semiconductor laser, which includes the epitaxial wafer as described in the above embodiments.

The beneficial effects of the present invention are: different from the prior art, the present invention provides an epitaxial wafer, and the epitaxial wafer includes a substrate and a functional layer on the substrate. The epitaxial wafer also includes a light-emitting layer, the light-emitting layer is located in the functional layer, and the functional layer is used to drive the light-emitting layer to emit light. Wherein, at least part of the layer body in the functional layer is doped with Mg to increase the quasi-Fermi level position of the at least part of the layer body, thereby improving the effective barrier to block current leakage, so the laser device using the epitaxial wafer of the present invention can be improved. characteristic temperature, thereby improving its electro-optical conversion efficiency.

Description of drawings

Fig. 1 is a schematic structural view of an embodiment of an epitaxial wafer of the present invention;

Fig. 2 is a schematic diagram of the conduction band structure of the epitaxial wafer shown in Fig. 1;

3 is a schematic structural view of another embodiment of the epitaxial wafer of the present invention;

Fig. 4 is a schematic diagram of the conduction band structure of the epitaxial wafer shown in Fig. 3;

5 is a schematic structural view of an embodiment of the first confinement layer of the present invention;

Figure 6 is a schematic structural view of an embodiment of the barrier layer of the present invention;

7 is a schematic diagram of an embodiment of the conduction band structure of the epitaxial wafer of the present invention;

Fig. 8 is a schematic structural diagram of an embodiment of the semiconductor laser of the present invention.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

In order to solve the technical problems of low characteristic temperature and low electro-optic conversion efficiency of lasers in the prior art, an embodiment of the present invention provides an epitaxial wafer, which includes: a substrate; a functional layer, the functional layer is located on the substrate above; wherein, at least part of the functional layer is doped with Mg; the light-emitting layer, the light-emitting layer is located in the functional layer, and the functional layer is used to drive the light-emitting layer to emit light. The details are described below.

Please refer to FIG. 1 . FIG. 1 is a schematic structural diagram of an embodiment of an epitaxial wafer of the present invention.

In one embodiment, the epitaxial wafer includes a substrate 1 and a functional layer 2 on the substrate 1, and the epitaxial wafer further includes a light emitting layer 3, the light emitting layer 3 is located in the functional layer 2, and the functional layer 2 is used to drive the light emitting layer 3 Luminous to meet the needs of use. For example, the epitaxial wafer is used in a laser, and the light-emitting layer 3 is used to generate sufficient optical gain and emit light at a laser output wavelength required by the laser output.

At least part of the layer body in the functional layer 2 of the epitaxial wafer is doped with Mg to increase the quasi-Fermi level position of the at least part of the layer body, thereby increasing the effective barrier to block current leakage, reducing current leakage, and then improving its electro-optical energy. Conversion efficiency, reduce heat production.

In an embodiment, the functional layer 2 includes a first functional layer 21 and a second functional layer 22 . The first functional layer 21, the luminescent layer 3 and the second functional layer 22 are sequentially stacked on the substrate 1 along the direction close to the substrate 1, that is, the second functional layer 22 is located on the substrate 1, and the luminescent layer 3 is located on the second functional layer. 22 , the first functional layer 21 is located on the light emitting layer 3 .

Further, the first functional layer 21 includes a first waveguide layer 211 and a first confinement layer 212 . The first waveguide layer 211 is located on the side of the light-emitting layer 3 away from the second functional layer 22, the first confinement layer 212 is located on the side of the first waveguide layer 211 away from the light-emitting layer 3, and the first waveguide layer 211 and the first confinement layer 212 Doping with Mg is used to increase the quasi-Fermi level position of the first waveguide layer 211 and the first confinement layer 212, thereby increasing the effective potential barrier against current leakage.

It should be noted that the concentration of Mg doped in the first waveguide layer 211 is smaller than the concentration of Mg in the first confinement layer 212 . The inventors have found that the Mg concentration doped in the first waveguide layer 211 and the first confinement layer 212 is set in such a way that the effective barriers of the first waveguide layer 211 and the first confinement layer 212 can be maximized, thereby maximizing reduce leakage current. In addition, the highly doped first confinement layer 212 can further increase the electrical conductivity of the material, reduce the series resistance of the laser, improve the electro-optical conversion efficiency of the laser, and reduce heat generation.

Further, the second functional layer 22 includes a second waveguide layer 221 and a second confinement layer 222 . The second waveguide layer 221 is located on a side of the light emitting layer 3 away from the first functional layer 21 , and the second confinement layer 222 is located on a side of the second waveguide layer 221 away from the light emitting layer 3 . Wherein, the second confinement layer 222 is located on the substrate 1 .

It should be noted that the first waveguide layer 211 and the second waveguide layer 221 are used to transport electrons or holes to the light-emitting layer 3, where the electrons and holes meet and pair up in the light-emitting layer 3, and the bonded electrons and holes release energy And is absorbed by the light-emitting layer 3, so that the light-emitting layer 3 radiates laser light. The first confinement layer 212 and the second confinement layer 222 have a lower refractive index than the first waveguide layer 211 and the second waveguide layer 221 . The laser light radiated by the light-emitting layer 3 passes through the first waveguide layer 211 and the second waveguide layer 221, and is totally reflected at the interface between the first waveguide layer 211, the second waveguide layer 221, the first confinement layer 212, and the second confinement layer 222 , so that the laser light field radiated by the light-emitting layer 3 is confined in the light-emitting layer 3 , the first waveguide layer 211 and the second waveguide layer 221 .

The first functional layer 21 also includes a transition layer 213 and a contact layer 214 . The transition layer 213 is located on a side of the first confinement layer 212 away from the first waveguide layer 211 , and the contact layer 214 is located on a side of the transition layer 213 away from the first confinement layer 212 . The contact layer 214 serves as a medium for connecting the epitaxial wafer to an external power supply structure or a structure functioning as a power supply, and is used to introduce electrical signals (electrons or holes) that drive the light emitting layer 3 to emit light. The transition layer 213 serves as a transition medium between the first confinement layer 212 and the contact layer 214 .

It can be understood that the first functional layer 21 may be an N-type semiconductor layer; correspondingly, the second functional layer 22 is a P-type semiconductor layer. Or the first functional layer 21 is a P-type semiconductor layer; correspondingly, the second functional layer 22 is an N-type semiconductor layer.

Taking the first functional layer 21 as a P-type semiconductor layer and the second functional layer 22 as an N-type semiconductor layer as an example, the specific structure of the epitaxial wafer is described below:

Since the second functional layer 22 is located between the substrate 1 and the light-emitting layer 3 , the substrate 1 also needs to be an N-type semiconductor that matches the second functional layer 22 . Specifically, the substrate 1 may be an N-type GaAs single wafer, which serves as the base of the upper layer structure of the epitaxial wafer.

The second confinement layer 222 of the second functional layer 22 is N-type non-doped Al _x In _1-x P matched with N-type GaAs, and has a thickness of 500-5000 nm. The second waveguide layer 221 is N-type non-doped ( _{AlyGa 1-y} ) _x In _1-x P with a thickness of 50-250 nm.

The light-emitting layer 3, that is, the quantum well layer, is _{GazIn1 -zP} , with a thickness of 2-200nm. The wavelength of the laser light irradiated by the light emitting layer 3 is 620-670 nm.

The first waveguide layer 211 of the first functional layer 21 is P-type ( _{AlyGa 1-y} ) _x In _1-x P with a thickness of 50-250 nm. The first waveguide layer 211 is doped with Mg, wherein the doping concentration of Mg is 5×10 ¹⁷ cm ⁻³ . The first confinement layer 212 is P-type Al _x In _1-x P with a thickness of 500-5000 nm. The first confinement layer 212 is doped with Mg, wherein the doping concentration of Mg is 3×10 ¹⁸ cm ⁻³ . It can be seen that the concentration of Mg doped in the first waveguide layer 211 is smaller than the concentration of Mg in the first confinement layer 212 .

The transition layer 213 and the contact layer 214 correspond to the first functional layer 21. When the first functional layer 21 is a P-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to a P-type semiconductor layer, and when the first functional layer 21 is For an N-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to an N-type semiconductor layer. In this embodiment, the transition layer 213 is P-type non-doped ( _{AlyGa 1-y} ) _x In _1-x P with a thickness of 50-250 nm. The contact layer 214 is P-type non-doped GaAs with a thickness of 100-500 nm. The contact layer 214 can be doped, for example doped with Mg, Zn, etc., to improve the conductivity of the contact layer 214 .

Wherein, 0<x<0.52, 0<y<0.8, 0.3<z<0.7 (the same applies below). The inventors found that the above-mentioned AlGaInP-based materials adopt such an element ratio, which can make the functional film layer composed of the corresponding AlGaInP-based materials have good physical or chemical properties, so as to meet the actual use requirements of epitaxial wafers.

FIG. 2 shows the conduction band structure of the epitaxial wafer described in this embodiment, where section A indicates the concentration of doped Mg in the first waveguide layer 211 , and section B indicates the concentration of doped Mg in the first confinement layer 212 . It can be seen that by doping the first waveguide layer 211 and the first confinement layer 212 with different concentrations of Mg, wherein the Mg concentration doped in the first waveguide layer 211 is smaller than the Mg concentration in the first confinement layer 212, the Mg concentration in the first confinement layer 212 can be effectively improved. The conduction bands of the first waveguide layer 211 and the first confinement layer 212 are stepped to reduce current leakage and improve the electro-optic conversion efficiency of the epitaxial wafer.

Please refer to FIG. 3 . FIG. 3 is a schematic structural diagram of another embodiment of the epitaxial wafer of the present invention.

Due to the high activation energy (190meV) of Mg, the efficiency of generating electrons or hole carriers in the Mg-doped functional layer 2 is not high, and the effect of improving the electro-optical conversion efficiency of the epitaxial wafer by doping Mg is limited. And the activation energy of Zn (100 ~ 125meV) is less than the activation energy of Mg, so the efficiency of electron or hole carrier generation in the functional layer 2 part doped with Zn is higher, it improves the electro-optic conversion efficiency of the epitaxial wafer to improve the effect of Better than Mg.

In view of this, the difference between this embodiment and the foregoing embodiments is that the first confinement layer 212 includes a first sub-constraint layer 2121 and a second sub-constraint layer 2122 . The first sub-confinement layer 2121 is located on a side of the first waveguide layer 211 away from the light-emitting layer 3 , and the second sub-confinement layer 2122 is located on a side of the first sub-confinement layer 2121 away from the first waveguide layer 211 .

Compared with Mg, the diffusion coefficient of Zn in AlGaInP-based materials is larger, and it is easy to diffuse into the light-emitting layer 3, resulting in light absorption, resulting in adverse effects on the performance of the epitaxial wafer radiating laser light. In view of this, in this embodiment, the first sub-confinement layer 2121 relatively close to the first waveguide layer 211 is doped with Mg, and the second sub-confinement layer 2122 relatively far away from the first waveguide layer 211 is doped with Zn. In this way, while doping Mg and Zn to improve the electro-optic conversion efficiency of the epitaxial wafer, it can effectively prevent Zn from diffusing into the light-emitting layer 3 and affecting the performance of the light-emitting layer 3 .

As described in the above embodiments, the first functional layer 21 may be an N-type semiconductor layer; correspondingly, the second functional layer 22 is a P-type semiconductor layer. Or the first functional layer 21 is a P-type semiconductor layer; correspondingly, the second functional layer 22 is an N-type semiconductor layer.

Taking the first functional layer 21 as a P-type semiconductor layer and the second functional layer 22 as an N-type semiconductor layer as an example, the specific structure of the epitaxial wafer is described below:

Since the second functional layer 22 is located between the substrate 1 and the light-emitting layer 3 , the substrate 1 also needs to be an N-type semiconductor that matches the second functional layer 22 . Specifically, the substrate 1 may be an N-type GaAs single wafer, which serves as the base of the upper layer structure of the epitaxial wafer.

The second confinement layer 222 of the second functional layer 22 is N-type non-doped Al _x In _1-x P matched with N-type GaAs, and has a thickness of 500-5000 nm. The second waveguide layer 221 is N-type non-doped ( _{AlyGa 1-y} ) _x In _1-x P with a thickness of 50-250 nm.

The light-emitting layer 3, that is, the quantum well layer, is _{GazIn1 -zP} , with a thickness of 2-200nm. The wavelength of the laser light irradiated by the light emitting layer 3 is 620-670 nm.

The first waveguide layer 211 of the first functional layer 21 is P-type ( _{AlyGa 1-y} ) _x In _1-x P with a thickness of 50-250 nm. The first waveguide layer 211 is doped with Mg, wherein the doping concentration of Mg is 5×10 ¹⁷ cm ⁻³ . The first sub-constraint layer 2121 of the first confinement layer 212 is P-type _{AlxIn1 -xP} , and its thickness is 10-500nm. The first sub-confinement layer 2121 is doped with Mg, and the doping concentration is 3×10 ¹⁸ cm ⁻³ . The second sub-constraint layer 2122 is P-type _{AlxIn1 -xP} , and its thickness is 1000-7000nm. The second sub-confinement layer 2122 is doped with Zn, and the doping concentration is 3×10 ¹⁸ cm ⁻³ .

It should be noted that the concentration of Mg doped in the first sub-confinement layer 2121 in this embodiment is equal to the concentration of Zn doped in the second sub-confinement layer 2122, and is equal to the concentration of Zn doped in the first confinement layer 212 in the above-mentioned embodiment. The Mg concentration. The purpose is to make the concentration of atoms doped in the first confinement layer 212 greater than the concentration of atoms doped in the first waveguide layer 211 . The corresponding technical effects have been described in detail in the above-mentioned embodiments and will not be repeated here.

The transition layer 213 and the contact layer 214 correspond to the first functional layer 21. When the first functional layer 21 is a P-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to a P-type semiconductor layer, and when the first functional layer 21 is For an N-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to an N-type semiconductor layer. In this embodiment, the transition layer 213 is P-type non-doped ( _{AlyGa 1-y} ) _x In _1-x P with a thickness of 50-250 nm. The contact layer 214 is P-type non-doped GaAs with a thickness of 100-500 nm. Of course, the contact layer 214 can also be doped, for example doped with Mg, Zn, etc., to improve the conductivity of the contact layer 214 .

Fig. 4 shows the conduction band structure of the epitaxial wafer described in this embodiment, wherein section A represents the concentration of doped Mg in the first waveguide layer 211, and section C represents the concentration of Mg doped in the first sub-confinement layer 2121 and the concentration of the second The concentration of Zn doped in the sub-confinement layer 2122. It can be seen that by doping Mg in the first sub-confinement layer 2121 of the first confinement layer 212, Zn is doped in the second sub-confinement layer 2122, and Zn is used to improve the efficiency of generating carriers in the epitaxial wafer, thereby improving the epitaxy efficiency. The electro-optical conversion efficiency of the wafer can be improved, and at the same time, it can effectively prevent Zn from diffusing into the light-emitting layer 3 and affect the performance of the light-emitting layer 3 .

Please refer to FIG. 5 . FIG. 5 is a schematic structural diagram of an embodiment of the first confinement layer of the present invention.

In an alternative embodiment, the first confinement layer 212 also includes a barrier layer 4 . The barrier layer 4 is located between the first sub-constraint layer 2121 and the second sub-constraint layer 2122 to prevent Zn in the second sub-constraint layer 2122 from diffusing into the light-emitting layer 3 . At the same time, when the contact layer 214 is doped with Zn, the barrier layer 4 can also prevent Zn in the contact layer 214 from diffusing into the light emitting layer 3 .

Further, the contact layer 214 of the first functional layer 21 is located on the side of the second sub-constraint layer 2122 away from the first sub-constraint layer 2121, and a transition layer 213 and a barrier layer are arranged between the contact layer 214 and the second sub-constraint layer 2122. 4 and the transition layer 213 are used to increase the distance between the contact layer 214 and the light emitting layer 3 . In the case that the contact layer 214 is doped with Zn, the distance between the contact layer 214 and the light-emitting layer 3 increases, which can make it difficult for Zn to diffuse into the light-emitting layer 3, and avoid the Zn doped in the contact layer 214 from Influence of luminescent layer 3 on laser properties.

Preferably, the barrier layer 4 can be made of AlGaInP-based materials, etc., and the barrier layer 4 can be made of undoped AlGaInP material. The inventors have found through a large number of experiments that, compared with other materials, the barrier layer 4 made of AlGaInP-based materials is more effective in preventing Zn from diffusing into the light-emitting layer 3 .

Please refer to FIG. 6 . FIG. 6 is a schematic structural diagram of an embodiment of the barrier layer of the present invention.

In an alternative embodiment, different from the above embodiments, the barrier layer 4 comprises a first barrier layer 41 and a second barrier layer 42 . The first barrier layer 41 is doped with Mg, and the second barrier layer 42 is doped with Zn. Moreover, the barrier layer 4 is a superlattice structure in which at least one first barrier layer 41 and at least one second barrier layer 42 are alternately stacked and paired.

That is to say, the barrier layer 4 includes at least one first barrier layer 41 and at least one second barrier layer 42, one layer of the first barrier layer 41 and one layer of the second barrier layer 42 are a pair, that is, the first barrier layer 41 and the number of layers of the second barrier layer 42 are equal. The barrier layer 4 also presents the form of first barrier layers 41 and second barrier layers 42 being alternately stacked, that is, the same pair of first barrier layers 41 and second barrier layers 42 are stacked with each other, and are combined with other pairs of first barrier layers 41 and 42. The second barrier layer 42 is stacked on top of each other, and generally presents the first barrier layer 41 , the second barrier layer 42 , the first barrier layer 41 , the second barrier layer 42 , the first barrier layer 41 . . . are stacked sequentially.

Further, the first barrier layer 41 is a superlattice structure of AlGaInP doped with Mg, and the second barrier layer 42 is a superlattice structure of AlGaInP doped with Zn, wherein the doping concentration of Mg or Zn is 1× 10 ¹⁷ ~5×10 ¹⁸ cm ^-3 . The thicknesses of the first barrier layer 41 and the second barrier layer 42 are equal and range from 0.5 to 20 nm. The barrier layer 4 includes 1 to 20 pairs of the first barrier layer 41 and the second barrier layer 42 in total. Wherein, the specific structural form of the superlattice structure is within the comprehension scope of those skilled in the art, and will not be repeated here.

Since the diffusion coefficient of Mg or Zn in the AlGaInP material of the superlattice structure is relatively low, it has a relatively steep doping edge, which can reduce the diffusion of dopant atoms into the light-emitting layer 3, thereby reducing the diffusion of dopant atoms into the light-emitting layer 3 The resulting impact on the performance of the light-emitting layer 3. Moreover, in order to further reduce the dopant atoms, such as Zn, that diffuse into the light-emitting layer 3, the first barrier layer 41 of the first layer is located on the first sub-confinement layer 2121, and subsequent layers of other barrier layers 4 are sequentially stacked on the first sub-confinement layer 2121. on the barrier layer 41 to increase the distance for Zn to diffuse into the light-emitting layer 3 , thereby reducing the diffusion of Zn into the light-emitting layer 3 .

Fig. 7 shows the conduction band structure of the epitaxial wafer described in this embodiment, wherein segment A represents the concentration of doped Mg in the first waveguide layer 211, segment D represents the first barrier layer 41 and the second barrier layer 42 of the barrier layer 4 Paired superlattice structure to reduce the diffusion of Zn dopant atoms. It can be seen that in this embodiment, by adding the barrier layer 4 , it can effectively prevent dopant atoms from diffusing into the light emitting layer 3 . At the same time, the barrier layer 4 adopts a superlattice structure in which the first barrier layer 41 and the second barrier layer 42 are paired, so that the diffusion coefficient of the dopant atoms in the superlattice structure is relatively low, further preventing the dopant atoms from diffusing into the luminous Layer 3, so as to reduce the impact on the performance of the light-emitting layer 3 caused by the diffusion of dopant atoms into the light-emitting layer 3.

Please refer to FIG. 8 . FIG. 8 is a schematic structural diagram of an embodiment of the semiconductor laser of the present invention.

In one embodiment, the semiconductor laser 5 includes an epitaxial wafer 51 , and the epitaxial wafer 51 is stimulated to radiate laser light, so as to realize the function of the semiconductor laser 5 to output laser light. Wherein, the specific structural form of the epitaxial wafer 51 has been described in detail in the above-mentioned embodiments, and will not be repeated here.

The above is only the embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process conversion made by using the description of the present invention and the contents of the accompanying drawings, or directly or indirectly used in other related technologies fields, are all included in the scope of patent protection of the present invention in the same way.

Claims (8)

1. an epitaxial wafer, is characterized in that, described epitaxial wafer comprises: Substrate; A functional layer, the functional layer is located on the substrate; wherein at least part of the functional layer is doped with Mg; A light-emitting layer, the light-emitting layer is located in the functional layer, the functional layer is used to drive the light-emitting layer to emit light, the functional layer includes a first functional layer and a second functional layer, the first functional layer, the The light-emitting layer and the second functional layer are sequentially stacked on the substrate along a direction close to the substrate; The first functional layer includes a first waveguide layer and a first confinement layer, the first waveguide layer is located on the side of the light-emitting layer away from the second functional layer, and the first confinement layer is located on the first confinement layer. The side of the waveguide layer away from the light-emitting layer, and the first waveguide layer and the first confinement layer are doped with Mg; The first confinement layer includes a first sub-confinement layer and a second sub-confinement layer, the first sub-confinement layer is located on the side of the first waveguide layer away from the light-emitting layer, and the second sub-confinement layer is located on the A side of the first sub-confinement layer away from the first waveguide layer; wherein, the first sub-confinement layer is doped with Mg, and the second sub-confinement layer is doped with Zn. 2. The epitaxial wafer according to claim 1, wherein the Mg concentration in the first waveguide layer is smaller than the Mg concentration in the first confinement layer. 3 . The epitaxial wafer according to claim 1 , wherein the first confinement layer further comprises a barrier layer, and the barrier layer is located between the first sub-constraint layer and the second sub-constraint layer. 4 . 4. The epitaxial wafer according to claim 3, wherein the barrier layer comprises a first barrier layer and a second barrier layer, the first barrier layer is doped with Mg, and the second barrier layer is doped with There is Zn, and the barrier layer is a superlattice structure in which at least one layer of the first barrier layer and at least one layer of the second barrier layer are alternately stacked and paired. 5. The epitaxial wafer according to claim 3, wherein the first functional layer further comprises a contact layer, and the contact layer is located on a side of the second sub-constraint layer away from the first sub-constraint layer , a transition layer is provided between the contact layer and the second sub-constraining layer, and the barrier layer and the transition layer are used to increase the distance between the contact layer and the light-emitting layer; wherein, the The contact layer is doped with Zn. 6. The epitaxial wafer according to claim 3, wherein the barrier layer is made of undoped AlGaInP material. 7. The epitaxial wafer according to any one of claims 1 to 6, wherein the first functional layer is an N-type semiconductor layer, and the second functional layer is a P-type semiconductor layer; or the first The functional layer is a P-type semiconductor layer, and the second functional layer is an N-type semiconductor layer. 8. A semiconductor laser, characterized in that the semiconductor laser comprises the epitaxial wafer according to any one of claims 1 to 7.

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