CN116246994A - Method for temporarily bonding semiconductor wafer to prevent glue overflow - Google Patents
Method for temporarily bonding semiconductor wafer to prevent glue overflow Download PDFInfo
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- CN116246994A CN116246994A CN202310523666.4A CN202310523666A CN116246994A CN 116246994 A CN116246994 A CN 116246994A CN 202310523666 A CN202310523666 A CN 202310523666A CN 116246994 A CN116246994 A CN 116246994A
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- 239000003292 glue Substances 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 48
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the technical field of semiconductor wafer processing, in particular to a method for temporarily bonding anti-overflow glue on a semiconductor wafer. The method comprises the following steps: (1) A bonding groove is formed in the transparent slide glass, so that the size of the bonding groove is matched with the long size of the semiconductor wafer groove to be bonded, and a mask is arranged outside the bonding groove; (2) Setting photosensitive glue in the bonding groove in a spin coating mode, wherein the photosensitive glue overflowing the bonding groove is positioned on the mask; (3) Attaching the semiconductor wafer in a bonding groove, wherein a coating film is formed on the side surface of the semiconductor wafer by photosensitive adhesive between the inner wall of the bonding groove and the side wall of the semiconductor wafer, and the top surface of the semiconductor wafer is higher than the top surface of the bonding groove; (4) And removing the mask, wherein the mask carries photosensitive adhesive overflowed from the bonding groove to separate from the transparent slide. The method has the characteristics of high bonding reliability, reduced bonding difficulty and capability of coating and protecting the side surface of the semiconductor wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor wafer processing, in particular to a method for temporarily bonding anti-overflow glue on a semiconductor wafer.
Background
With the development of miniaturization of electronic products, electronic chips are also developed in the direction of thinner and thinner, and fragments are very easy to occur after or during the thickness reduction of a silicon wafer, or the wafer is bent and deformed due to stress when the wafer is processed, so that the thin wafer cannot be directly processed. Thus, in order to be able to process such thin wafers, it is necessary to temporarily bond such wafers to the carrier sheet. Debonding may also be required after wafer processing is complete to separate the wafer from the carrier.
Laser scanning is currently commonly used to debond wafers and glass slides. The laser bonding method is as follows: and scanning the photosensitive adhesive between the wafer and the glass slide, so that the adhesive property of the photosensitive adhesive fails under the laser energy, and the wafer and the glass slide are released from adhesion. The laser debonding process is performed in a pipeline format, typically setting a fixed laser scan path, laser power, and spot size. If the photosensitive glue between the wafer and the glass slide exceeds the laser scanning range, the bonding is incomplete, and the wafer and the glass slide are difficult to separate.
In the bonding process of the wafer and the glass slide, the glue spreading or dripping position is inaccurate in positioning, the glue amount is controlled inaccurately, and the glue is extruded when the wafer is attached to the glass slide, so that the glue overflowing phenomenon can be caused, and the bonding release qualification rate is affected. And the overflowed colloid remains on the transparent slide, so that the transparent slide needs to be cleaned when being recycled, and the overflowed colloid may remain on the wafer, so that the wafer is difficult to clean.
The purpose of the temporary bonding of the wafer and the glass slide is to enable the glass slide to support the wafer so as to ensure that small-size wafers can be processed smoothly. In the wafer processing process, especially when a coating layer and a welding part are arranged on the surface of the wafer, the side surface of the wafer is easy to be polluted. In the prior art, only the bottom surface of the wafer is adhered to the surface of the glass slide, and the processing quality of the wafer is affected without the protection effect on the side surface of the wafer during processing.
Disclosure of Invention
The invention aims to provide a temporary bonding anti-overflow adhesive method for a semiconductor wafer, which has the characteristics of high bonding reliability, reduced bonding difficulty and capability of coating and protecting the side surface of the semiconductor wafer.
To achieve the purpose, the invention adopts the following technical scheme:
a method for temporarily bonding a semiconductor wafer to prevent glue overflow comprises the following steps:
(1) A bonding groove is formed in the transparent slide glass, so that the size of the bonding groove is matched with the long size of the semiconductor wafer groove to be bonded, and a mask is arranged outside the bonding groove;
(2) Setting photosensitive glue in the bonding groove in a spin coating mode, wherein the photosensitive glue overflowing the bonding groove is positioned on the mask;
(3) Attaching the semiconductor wafer in a bonding groove, wherein a coating film is formed on the side surface of the semiconductor wafer by photosensitive adhesive between the inner wall of the bonding groove and the side wall of the semiconductor wafer, and the top surface of the semiconductor wafer is higher than the top surface of the bonding groove;
(4) And removing the mask, wherein the mask carries photosensitive adhesive overflowed from the bonding groove to separate from the transparent slide.
Further, the mask is provided with a yielding hole, and after the mask is attached to the transparent slide, the bonding groove is formed by the yielding hole.
Further, the transparent slide is integrally formed with the bonding groove, and the top surface of the bonding groove is flush with the top surface of the transparent slide;
the mask is provided with a yielding hole, and after the mask is attached to the transparent slide, the edge of the yielding hole is aligned to the edge of the bonding groove.
Further, the transparent slide is provided with a convex frame, and the convex frame forms the bonding groove;
the mask is provided with a yielding hole, the mask is attached to the transparent slide, the yielding hole is sleeved on the convex frame, and the top surface of the mask is flush with or lower than the top surface of the convex frame.
Further, when the photosensitive adhesive is in a semi-cured state, the mask is removed.
Further, the method for temporarily bonding the semiconductor wafer to prevent glue overflow further comprises the steps of glue overflow detection and bonding detection:
the transparent slide glass is a light-transmitting transparent slide glass, and the edge of the bonding groove is provided with a colored frame;
before removing the mask, irradiating the transparent slide glass with visible light and photographing, judging whether the colored frame is fully paved with photosensitive adhesive according to a bonding image obtained by photographing, if the colored frame is fully paved with photosensitive adhesive, enabling the transparent slide glass to carry the semiconductor chip into a photosensitive adhesive semi-curing process, and if the colored frame is not fully paved with photosensitive adhesive, enabling the transparent slide glass to carry the semiconductor chip into a glue filling process;
after the mask is removed, the transparent slide is irradiated with visible light and photographed, whether glue overflow exists outside the colored frame or not is judged according to the photographed glue overflow detection image, if the glue overflow does not exist, the transparent slide carries the semiconductor chip to enter a photosensitive glue complete curing process, and if the glue overflow exists, the transparent slide carries the semiconductor chip to enter a glue overflow removing process.
Further, the glue filling procedure is as follows: the transparent slide carries the semiconductor chip to move to the glue filling working area and is aligned; determining injection coordinates according to the defect parts of the photosensitive adhesive by referring to the bonding image; injecting glue into the bonding groove by using a glue injection needle tube according to the obtained injection coordinates;
the procedure of removing the overflow glue is as follows: the transparent slide carries the semiconductor chip to move to a laser working area and is aligned; determining a laser scanning range according to the glue overflow position and the area by referring to the glue overflow detection image; and performing laser scanning according to the obtained laser scanning range to eliminate glue overflow.
Further, the transparent slide is provided with a plurality of bonding grooves in an array mode, the width of the mask corresponds to the width of the transparent slide, and the mask is provided with abdication holes in an array mode;
the mask is arranged in a rolled mode, and the mask is cut off after the mask is attached to the transparent slide glass.
Further, in the step (1), a mask is attached to the surface of the transparent slide by means of roller film or vacuum air bag film.
In the step (4), the mask is torn off by rubbing the corners of the mask on the transparent slide with a rubber roller.
The technical scheme provided by the invention can comprise the following beneficial effects:
the transparent slide is provided with the mask, so that the overflow glue can be removed, the photosensitive glue outside the bonding groove is positioned on the mask, and when the mask is removed, the mask carries the removed photosensitive glue to be separated from the transparent slide together, so that the semiconductor wafer and the transparent slide can be reliably separated by the preset laser parameters in the laser bonding step;
secondly, the photosensitive adhesive is coated on the bonding groove in a spin coating mode, the thickness of the adhesive layer is set more accurately, and the laser bonding reliability is further improved; in addition, the photosensitive adhesive is arranged on the transparent slide glass in a spin coating mode to exhaust the colloid, so that the semiconductor piece and the transparent slide glass are firmly bonded;
furthermore, the bonding groove is favorable for forming a protective coating film on the side surface of the semiconductor wafer, so that the semiconductor wafer is prevented from being polluted by other materials in the processing process.
Drawings
FIG. 1 is a schematic illustration of a semiconductor wafer bonded to a transparent carrier wafer in accordance with one embodiment of the present invention;
FIG. 2 is a schematic illustration of a semiconductor wafer bonded to a transparent carrier wafer in accordance with another embodiment of the present invention;
FIG. 3 is a schematic view of a semiconductor wafer bonded to a transparent carrier wafer in accordance with yet another embodiment of the present invention;
wherein, transparent slide 1, semiconductor chip 2, mask 3.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
Referring to fig. 1-3, the present invention provides a method for temporarily bonding an anti-overflow adhesive to a semiconductor wafer, comprising the steps of:
(1) A bonding groove is arranged on the transparent slide glass 1, so that the size of the bonding groove is matched with the long size of the groove of the semiconductor chip 2 to be bonded, and a mask 3 is arranged outside the bonding groove;
(2) Setting photosensitive glue in the bonding groove in a spin coating mode, wherein the photosensitive glue overflowing the bonding groove is positioned on the mask 3;
(3) Attaching the semiconductor chip 2 in a bonding groove, wherein a coating film is formed on the side surface of the semiconductor chip 2 by photosensitive adhesive between the inner wall of the bonding groove and the side wall of the semiconductor chip 2, and the top surface of the semiconductor chip 2 is higher than the top surface of the bonding groove;
(4) The mask 3 is removed, and the mask 3 carries the photosensitive paste outside the overflow bonding groove to be separated from the transparent slide 1.
In the method, the surface of the transparent slide glass 1 is provided with the mask 3, the mask 3 is positioned outside the bonding groove, then the photosensitive adhesive positioned outside the bonding groove is positioned on the mask 3, and when the mask 3 is removed, the mask 3 carries overflowed photosensitive adhesive to be jointly separated from the transparent slide glass 1, so that the effect of preventing the adhesive overflow of the temporary bonding of the semiconductor chip 2 is realized, and the semiconductor chip 2 and the transparent slide glass 1 are reliably separated by the preset laser parameters in the laser bonding step;
secondly, a bonding groove is formed in the transparent slide glass 1, the bonding groove has a set volume, and when the bonding groove is coated with photosensitive glue in a spin coating mode, quantitative photosensitive glue is arranged in the bonding groove, so that the thickness of a glue layer between the semiconductor chip 2 and the transparent slide glass 1 is fixed, and the reliability of laser de-bonding is further improved; in addition, the photosensitive adhesive is arranged on the transparent slide glass 1 in a spin coating mode, so that the thickness of the adhesive layer is more accurate, the adhesive layer can be exhausted, the problem of poor bonding firmness caused by bubbles in the adhesive layer is prevented, and the semiconductor piece is more firmly bonded with the transparent slide glass 1;
in addition, the photosensitive adhesive between the inner wall of the bonding groove and the side wall of the semiconductor chip 2 forms a coating film on the side surface of the semiconductor chip, the coating film protects the side surface of the semiconductor chip in the processing process of the semiconductor chip, other materials are prevented from polluting the semiconductor chip, and the coating film on the side surface of the semiconductor chip is removed by expanding the scanning range of laser in the laser bonding process.
It will be appreciated that the transparent slide 1 is cleaned before the mask 3 is attached to enhance the attaching force of the mask 3, specifically, the transparent slide 1 is cleaned with a plasma gas. Illustratively, the mask 3 is electrostatically attached or adhered to the surface of the transparent slide 1.
In some embodiments of the present invention, the mask 3 has relief holes, and after the mask 3 is attached to the transparent carrier 1, the relief holes form bonding grooves. The formation of the bonding grooves by the mask 3 allows the bonding grooves to be more flexible in size. The size and the shape of the bonding groove can be adjusted by adjusting the size and the shape of the yielding hole of the mask 3, so that the bonding groove is suitable for bonding various semiconductor chips, one transparent slide glass 1 can be suitable for temporary bonding of various semiconductor chips 2, the use quantity of the transparent slide glass 1 in the production process is saved to a great extent, and the stock quantity of the transparent slide glass 1 is reduced. It should be noted that the mask 3 has a certain thickness so as to satisfy the depth requirement of the bonding groove, so as to ensure the bonding firmness and the height of the side coating film of the semiconductor wafer 2.
In some embodiments of the present invention, the transparent slide 1 is integrally formed with a bonding groove, the top surface of which is flush with the top surface of the transparent slide 1; the mask 3 is provided with a yielding hole, and after the mask 3 is attached to the transparent slide 1, the edge of the yielding hole is aligned with the edge of the bonding groove. The transparent carrier sheet 1 having the bonding grooves integrally formed is applicable to bonding only a semiconductor wafer 2 of a predetermined size, but the thickness of the mask 3 is small, and the hardness and adhesion requirements of the mask 3 are low. The transparent slide 1 is integrally molded by adopting the die, so that the molding process is simple, and the product consistency is high. In this embodiment, the bonding groove is a groove on the transparent slide glass 1, and in the process of removing the mask 3, the top end of the groove has a limiting effect on the colloid on the side surface of the semiconductor wafer 2, so that the glue overflow can be better torn and separated from the colloid in the bonding groove.
In some embodiments of the invention, the transparent slide 1 is provided with a ledge, which forms a bonding groove; the mask 3 is provided with a yielding hole, and after the mask 3 is attached to the transparent slide 1, the yielding hole is sleeved on the convex frame, and the top surface of the mask 3 is flush with or lower than the top surface of the convex frame. The provision of the protruding frame enables the formation of a bonding groove in the transparent slide 1. In this embodiment, the top end of the protruding frame protrudes from the top surface of the transparent slide 1, so that the top end of the protruding frame may be flush with the top surface of the mask 3 or higher than the top surface of the mask 3, when the semiconductor wafer 2 is bonded to the transparent slide 1 and the mask 3 is removed, the top end of the coating film on the side surface of the semiconductor wafer is flush with the top end of the protruding frame, and the top end boundary of the coating film is more neat, so as to facilitate effective de-bonding.
Alternatively, the bezel is integrally formed with the transparent slide 1 or attached to the transparent slide 1 in a mounting manner. The transparent slide 1 integrally formed with the convex frame can be formed by adopting a die, the forming process is simple, and the product consistency is high. The convex frames can be adhered to the transparent slide glass 1 in an adhesive mode, the sizes of the bonding grooves on the transparent slide glass 1 can be adjusted by selecting the convex frames with different sizes, the transparent slide glass is suitable for bonding various semiconductor chips 2, and the convex frames can be detached in a chemical reagent dissolving mode.
Preferably, the cross section of the flange wall is triangular, so that the top end of the flange is pointed, and when the mask 3 is removed, the top end of the flange has a better cutting effect on overflowed colloid.
Further, the mask 3 is removed when the photosensitive paste is in a semi-cured state.
The purpose of removing the mask 3 is to remove glue spilled around the bonding grooves on the transparent slide 1 to ensure the effectiveness of the de-bonding. The photoresist is generally a liquid photoresist, and removing the mask 3 immediately after coating may affect the integrity of the coating film on the side of the semiconductor wafer 2, and particularly, in some embodiments, the formation of bonding grooves by the relief holes of the mask 3 may result in a small or incomplete coating film on the side of the semiconductor wafer 2. And for the bonding groove formed integrally with the transparent slide 1 or the bonding groove installed, the mask 3 is removed immediately after the coating is completed, and photosensitive adhesive at the edge of the bonding groove is easily overflowed again based on the influence of liquid tension. Therefore, when the photosensitive adhesive is in a semi-cured state, the photosensitive adhesive basically has no fluidity and has a certain sizing effect, and the mask 3 is removed at the moment, so that the integrity of the coating film can be ensured and the secondary adhesive overflow can be prevented.
It can be understood that the photosensitive paste being in a semi-cured state means that after the photosensitive paste is primarily cured, the fluidity becomes worse and the viscosity increases, and the coating film is not deformed and no secondary glue overflows after reaching a non-flowable semi-solid state and removing the mask 3, i.e. the semi-cured state of the present embodiment. The photosensitive adhesive is cured in a heating mode or an ultraviolet irradiation mode, and the curing degree of the photosensitive adhesive can be controlled by controlling the heating temperature and time or controlling the irradiation dosage and time. The curing parameters can be obtained by the skilled person with a few experiments and are not described here.
Further, the method for temporarily bonding the semiconductor wafer 2 to the anti-overflow adhesive further comprises the steps of adhesive overflow detection and bonding detection:
the transparent slide glass 1 is a transparent slide glass which transmits light, and the edge of the bonding groove is provided with a colored frame;
before removing the mask 3, irradiating the transparent slide 1 with visible light and photographing, judging whether the colored frame is fully paved with photosensitive adhesive according to a bonding image obtained by photographing, if the colored frame is fully paved with photosensitive adhesive, the transparent slide 1 carries the semiconductor chip 2 into a photosensitive adhesive semi-curing process, and if the colored frame is not fully paved with photosensitive adhesive, the transparent slide 1 carries the semiconductor chip 2 into a glue filling process;
after the mask 3 is removed, the transparent slide 1 is irradiated with visible light and photographed, whether glue overflow exists outside the colored frame is judged according to a photo-photographed glue overflow detection image, if no glue overflow exists, the transparent slide 1 carries the semiconductor wafer 2 into a photosensitive glue complete curing process, and if glue overflow exists, the transparent slide 1 carries the semiconductor wafer 2 into a glue overflow cleaning process.
When the semiconductor wafer 2 is placed in the bonding groove, due to insufficient uniformity of angles of the semiconductor wafer 2 entering the bonding groove and other uncontrollable factors, bubbles may occur between the semiconductor wafer 2 and the photosensitive adhesive, which affects bonding firmness of the semiconductor wafer 2, resulting in an increase in the wafer breaking rate in the subsequent processing step. Therefore, the scheme is provided with a bonding detection step for eliminating the defect. When the colored frame is fully paved with photosensitive adhesive and has no neutral position, the effective bonding is proved to be finished.
Since most of photosensitive adhesives are transparent liquids, and the carrier is transparent, it is difficult to position the bonding groove before bonding detection without a reference line. In this scheme, be provided with the color frame at the edge of bonding groove, then when judging bonding image, can carry out accurate location to the bonding groove to obtain accurate detection position on the bonding image. The color of the colored frame is lighter, and the line width is small, so that laser can conveniently pass through the frame during unlocking.
If the curing degree of the photosensitive adhesive is too high, the overflowed adhesive can not be completely removed when the mask 3 is removed, and the overflowed adhesive can be left at the edge of the bonding groove; if the photosensitive adhesive is not cured to a sufficient degree, the photosensitive adhesive has certain fluidity, and secondary adhesive overflow can occur. Therefore, the scheme is provided with the glue overflow detection step, and the glue overflow residue is cleared for the second time when the glue overflow residue occurs. Correspondingly, the colored border provides a reference for the area of glue overflow detection.
Specifically, when the key groove is formed by the relief hole of the mask 3, the colored frame is positioned on the inner wall of the relief hole, and when the key groove is formed by the groove or the convex frame, the colored frame is positioned on the top end surface of the groove or the convex frame.
The glue filling procedure is as follows: the transparent slide 1 carries the semiconductor chip 2 to move to a glue filling working area and is aligned; determining injection coordinates according to the defect parts of the photosensitive adhesive by referring to the bonding image; and injecting glue into the bonding groove by the glue injection needle tube according to the obtained injection coordinates. And determining injection coordinates based on the accurate positioning of the bonding image on the adhesive shortage part according to a shortest path principle, wherein the injection coordinates are positioned between the side surface of the semiconductor wafer and the inner wall of the bonding groove. The tip of the glue injection needle tube is inserted into the bottom end of the bonding groove and then injected with glue, so that bubbles can be extruded out of the bonding groove better, the photosensitive glue extruded out of the bonding groove flows onto the mask 3, and the photosensitive glue is removed in the step of removing the mask 3. It will be appreciated that after the glue filling is completed, the semiconductor wafer 2 is repositioned to ensure a smooth bond to the transparent carrier wafer 1.
The procedure of glue overflow removal is as follows: the transparent slide 1 carries the semiconductor chip 2 to move to a laser working area and is aligned; determining a laser scanning range according to the glue overflow position and the area by referring to the glue overflow detection image; and performing laser scanning according to the obtained laser scanning range to eliminate glue overflow. Based on the determination of the glue overflow range of the glue overflow detection image, the glue outside the colored frame is removed in a laser scanning mode, so that the glue overflow is accurately eliminated. Preferably, the laser scanning range is also set according to the colored frame, the laser scanning range is annular, the inner ring of the scanning ring is the colored frame, the width of the scanning ring is related to the glue overflow range, namely, the width of the scanning ring is equal to the maximum distance between the glue overflow edge and the colored frame.
In some embodiments of the present invention, the transparent carrier 1 is arranged with a plurality of bonding grooves in an array manner, the width of the mask 3 corresponds to the width of the transparent carrier 1, and the mask 3 is arranged with relief holes in an array manner, so that the bonding efficiency and the processing efficiency of the semiconductor wafer are improved to a great extent. The mask 3 is arranged in a rolled mode, and when the mask 3 is attached to the transparent slide 1, the mask 3 is cut off, so that the production, storage and use of the mask 3 are facilitated.
Further, in the step (1), the mask 3 is attached to the surface of the transparent slide 1 by means of roller film or vacuum air bag film, so as to achieve the effect of rapid film attachment. In the step (4), the mask 3 is torn off in a mode that the rubber roller rubs the corners of the mask 3 on the transparent slide 1. It can be appreciated that the rubber roller is rotatably installed, when the transparent slide 1 is carried by the transmission belt and passes through the rubber roller, the mask 3 on the transparent slide 1 can be lifted by the rubber roller and transferred to the rubber roller based on the high friction coefficient of the surface of the rubber roller, so that the mask 3 on the transparent slide is removed.
Preferably, a plurality of rubber rolls are installed in the terminal surface of rotation axis with annular arrangement mode, and the rotation axis drives a plurality of rubber rolls and tears the action of removing of mask 3 one by one, still has waste collection mechanism in one side of rotation axis for collect the mask 3 of tearing, mask 3 clear away efficiently.
Other configurations and the like of a method of temporarily bonding a semiconductor wafer according to an embodiment of the present invention, and the operation thereof, are known to those skilled in the art, and will not be described in detail herein.
In the description herein, reference to the term "embodiment," "example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A method for temporarily bonding a semiconductor wafer to prevent glue overflow, comprising the steps of:
(1) A bonding groove is formed in the transparent slide glass, so that the size of the bonding groove is matched with the long size of the semiconductor wafer groove to be bonded, and a mask is arranged outside the bonding groove;
(2) Setting photosensitive glue in the bonding groove in a spin coating mode, wherein the photosensitive glue overflowing the bonding groove is positioned on the mask;
(3) Attaching the semiconductor wafer in a bonding groove, wherein a coating film is formed on the side surface of the semiconductor wafer by photosensitive adhesive between the inner wall of the bonding groove and the side wall of the semiconductor wafer, and the top surface of the semiconductor wafer is higher than the top surface of the bonding groove;
(4) And removing the mask, wherein the mask carries photosensitive adhesive overflowed from the bonding groove to separate from the transparent slide.
2. The method of claim 1, wherein the mask has relief holes, and the relief holes form the bonding grooves after the mask is attached to the transparent carrier.
3. The method for temporarily bonding a semiconductor wafer to prevent glue overflow according to claim 1, wherein the transparent carrier sheet is integrally formed with the bonding groove, and the top surface of the bonding groove is flush with the top surface of the transparent carrier sheet;
the mask is provided with a yielding hole, and after the mask is attached to the transparent slide, the edge of the yielding hole is aligned to the edge of the bonding groove.
4. The method for temporarily bonding a semiconductor wafer to prevent glue overflow according to claim 1, wherein the transparent carrier is provided with a bezel, the bezel forming the bonding groove;
the mask is provided with a yielding hole, the mask is attached to the transparent slide, the yielding hole is sleeved on the convex frame, and the top surface of the mask is flush with or lower than the top surface of the convex frame.
5. The method of claim 1, wherein the mask is removed while the photosensitive paste is in a semi-cured state.
6. The method of temporarily bonding a semiconductor wafer to prevent glue overflow according to claim 1, further comprising the steps of glue overflow detection and bonding detection:
the transparent slide glass is a light-transmitting transparent slide glass, and the edge of the bonding groove is provided with a colored frame;
before removing the mask, irradiating the transparent slide glass with visible light and photographing, judging whether the colored frame is fully paved with photosensitive adhesive according to a bonding image obtained by photographing, if the colored frame is fully paved with photosensitive adhesive, enabling the transparent slide glass to carry the semiconductor chip into a photosensitive adhesive semi-curing process, and if the colored frame is not fully paved with photosensitive adhesive, enabling the transparent slide glass to carry the semiconductor chip into a glue filling process;
after the mask is removed, the transparent slide is irradiated with visible light and photographed, whether glue overflow exists outside the colored frame or not is judged according to the photographed glue overflow detection image, if the glue overflow does not exist, the transparent slide carries the semiconductor chip to enter a photosensitive glue complete curing process, and if the glue overflow exists, the transparent slide carries the semiconductor chip to enter a glue overflow removing process.
7. The method for temporarily bonding a semiconductor wafer to prevent glue overflow according to claim 6, wherein the glue filling process comprises: the transparent slide carries the semiconductor chip to move to the glue filling working area and is aligned; determining injection coordinates according to the defect parts of the photosensitive adhesive by referring to the bonding image; injecting glue into the bonding groove by using a glue injection needle tube according to the obtained injection coordinates;
the procedure of removing the overflow glue is as follows: the transparent slide carries the semiconductor chip to move to a laser working area and is aligned; determining a laser scanning range according to the glue overflow position and the area by referring to the glue overflow detection image; and performing laser scanning according to the obtained laser scanning range to eliminate glue overflow.
8. The method for temporarily bonding an anti-overflow glue on a semiconductor wafer according to claim 1, wherein the transparent carrier is provided with a plurality of bonding grooves in an array manner, the width of the mask corresponds to the width of the transparent carrier, and the mask is provided with relief holes in an array manner;
the mask is arranged in a rolled mode, and the mask is cut off after the mask is attached to the transparent slide glass.
9. The method for temporarily bonding a semiconductor wafer to prevent glue overflow according to claim 1, wherein in the step (1), the mask is attached to the surface of the transparent carrier sheet by means of roller lamination or vacuum air bag lamination.
10. The method for temporarily bonding a semiconductor wafer to prevent glue overflow according to claim 1, wherein in the step (4), the mask is peeled off by rubbing the corner of the mask on the transparent carrier with a glue roller.
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| CN202310523666.4A CN116246994A (en) | 2023-05-11 | 2023-05-11 | Method for temporarily bonding semiconductor wafer to prevent glue overflow |
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