CN116219369B - Method for preparing boron carbide thin film by evaporation - Google Patents
Method for preparing boron carbide thin film by evaporation Download PDFInfo
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- CN116219369B CN116219369B CN202310223326.XA CN202310223326A CN116219369B CN 116219369 B CN116219369 B CN 116219369B CN 202310223326 A CN202310223326 A CN 202310223326A CN 116219369 B CN116219369 B CN 116219369B
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- gas
- boron
- boron carbide
- evaporation
- coating machine
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- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052580 B4C Inorganic materials 0.000 title claims abstract description 37
- 238000001704 evaporation Methods 0.000 title claims abstract description 30
- 230000008020 evaporation Effects 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 title 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- -1 carbon ions Chemical class 0.000 claims abstract description 6
- 238000010894 electron beam technology Methods 0.000 claims abstract description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000006386 neutralization reaction Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 239000001273 butane Substances 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
本发明属于真空镀膜领域，公开了一种蒸发制备碳化硼薄膜的方法。包括以下步骤：将硼粉置于蒸发镀膜机坩埚内，将清洗、干燥后的基片放到蒸发镀膜机中坩埚的上方；将蒸发镀膜机抽真空，开启电子枪以高能电子束对硼粉进行融化、蒸发，同时离子源开启，离子源使用重惰性气体和碳源气体的混合气体，气体经辉光放电产生重惰性气体离子、碳离子，经电离后高能量的碳离子和蒸发出来的硼反应生成碳化硼薄膜。本发明方法可以在低温下制备出碳化硼薄膜，避免了化学气象沉积法需要高温镀制带来的局限性。同时可以应用在蒸镀机中实现红外增透膜与碳化硼保护膜连续完成。The present invention belongs to the field of vacuum coating, and discloses a method for preparing boron carbide film by evaporation. The method comprises the following steps: placing boron powder in a crucible of an evaporation coating machine, placing a cleaned and dried substrate above the crucible in the evaporation coating machine; evacuating the evaporation coating machine, turning on the electron gun to melt and evaporate the boron powder with a high-energy electron beam, and turning on the ion source at the same time. The ion source uses a mixed gas of heavy inert gas and carbon source gas, and the gas generates heavy inert gas ions and carbon ions through glow discharge. After ionization, the high-energy carbon ions react with the evaporated boron to generate a boron carbide film. The method of the present invention can prepare a boron carbide film at a low temperature, avoiding the limitation of chemical vapor deposition method requiring high-temperature plating. At the same time, it can be applied to the evaporation coating machine to realize the continuous completion of infrared anti-reflection film and boron carbide protective film.
Description
Technical Field
The invention belongs to the field of vacuum coating, and particularly relates to a method for preparing a boron carbide film by evaporation.
Background
Boron carbide (B 4 C) is one of the hardest superhard materials in nature, with hardness inferior to diamond. Boron carbide has wide application prospect in the fields of machinery, electronics, coating films and the like by virtue of excellent physical properties. The boron carbide film has high permeability in an infrared spectrum region, has the advantages of high melting point, low density, high damage threshold and the like, and is an ideal protective material for an infrared optical lens.
The preparation method of the boron carbide film mainly comprises a Chemical Vapor Deposition (CVD) method and a Physical Vapor Deposition (PVD) method, wherein the chemical vapor deposition method is used for depositing a film at a very high temperature (about 1000 ℃), and many substrates cannot be deposited at the very high temperature, so that the selection range of substrate materials is limited. Physical Vapor Deposition (PVD) includes magnetron sputtering, reactive sputtering, etc., which can be performed at a relatively low substrate temperature, but most of the deposited boron carbide films are amorphous, difficult to realize crystalline structures, and not sufficiently high in hardness.
Chinese patent publication No. CN101314842a discloses a method for preparing boron carbide film by electron beam evaporation technique. The method can prepare amorphous boron carbide films, boron carbide films with polycrystalline structures, various boron carbide films with different B, C component proportions, and the prepared boron carbide films have smooth surfaces, compact films and good uniformity. However, the method needs to obtain the boron carbide material in advance, and the boron carbide material is sintered at a high temperature of 1400-1600 ℃ in the preparation process, so that the mixed uniformity of carbon and boron is poor, and elemental carbon or boron is generated during evaporation coating instead of a compound of the elemental carbon or the boron, thereby influencing the performance of the finally prepared boron carbide film.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a method for preparing a boron carbide film by evaporation, which can prepare the boron carbide film at low temperature and avoid the limitation caused by the need of high-temperature plating in a Chemical Vapor Deposition (CVD) method. Meanwhile, the method can be applied to an evaporator to realize continuous completion of the infrared antireflection film and the boron carbide protective film.
In order to achieve the purpose of the invention, the specific technical scheme is as follows:
A method for preparing a boron carbide film by evaporation, comprising the following steps:
Placing boron powder in a crucible of an evaporation coating machine, placing a cleaned and dried substrate above the crucible in the evaporation coating machine, vacuumizing the evaporation coating machine, starting an electron gun to melt and evaporate the boron powder by using a high-energy electron beam, starting an ion source, generating heavy inert gas ions and carbon ions by using mixed gas of heavy inert gas and carbon source gas through glow discharge, and reacting the ionized high-energy carbon ions with evaporated boron to generate a boron carbide film.
Preferably, the purity of the boron powder is not less than 99.9%.
Preferably, the heavy inert gas is at least one of helium, neon, argon, krypton and xenon, the carbon source gas is at least one of methane, butane and acetylene, and the substrate is one of a silicon substrate, a germanium substrate, a zinc sulfide substrate or a zinc selenide substrate.
Preferably, the heavy inert gas is helium, and the carbon source gas is methane.
Preferably, the ion source used is a hall source.
Preferably, in the mixed gas used by the ion source, the volume ratio of the heavy inert gas is 1% -20%, and the volume ratio of the carbon source gas is 80% -99%.
Preferably, the evaporation coating machine is vacuumized to a vacuum degree of below 2.0 x 10 -3 Pa.
Preferably, the temperature of the substrate is controlled to be 130-200 ℃ during film coating.
Preferably, the evaporation rate of the boron powder after melting is set to 2-10 angstroms per second.
Preferably, the ion source parameters are that the neutralization current is 0.3-0.6 ampere, the neutralization gas flow is 5-8 sccm, the anode voltage is 110-200 volts, and the anode current is 1.5-3 amperes.
Compared with the prior art, the invention has the beneficial effects that:
According to the technical scheme, the boron carbide film can be prepared at low temperature, and the limitation caused by the high-temperature plating required by a Chemical Vapor Deposition (CVD) method is avoided. Meanwhile, the method can be applied to an evaporator to realize continuous completion of the infrared antireflection film and the boron carbide protective film.
The invention does not need to prefabricate the boron carbide film material in advance, the film plating process is completed by adopting full chemical reaction, and no elemental material exists.
Detailed Description
The present invention will be described more fully hereinafter with reference to the preferred embodiments for the purpose of facilitating understanding of the present invention, but the scope of protection of the present invention is not limited to the specific embodiments described below.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present invention.
Unless otherwise specifically indicated, the various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or may be prepared by existing methods.
Example 1
The embodiment provides a method for preparing a boron carbide film by evaporation, which comprises the following steps:
(1) The germanium sheet with the thickness of 2mm and the diameter of 25mm is dried after ultrasonic cleaning, so that the film stripping caused by dirt on the surface of the lens is avoided;
(2) Placing boron powder with purity not less than 99.9% into a crucible of an evaporation coating machine, placing the cleaned germanium sheet into a fixture of the evaporation coating machine, adjusting the position to be right above an opening of the crucible, vacuumizing a cavity to a pressure below 2.0X10 -3 Pa, and setting the heating temperature of the coating to be 150 ℃;
(3) Starting an electron gun to melt boron powder after the vacuum and the temperature reach, slowly increasing the beam current of the electron gun from 0 watt to 300 watt, avoiding the film material from splashing due to the instant rise of the temperature when the power is increased too fast, and setting the evaporation rate to 2 angstrom per second after the boron powder is melted;
(4) Starting an ion source (Hall source) while evaporating boron powder, setting parameters of 0.3A of neutralization current, 5sccm of neutralization gas flow, 180V of anode voltage and 2A of anode current, and setting the gas inlet ratio of the ion source to methane with the volume ratio of 90% and argon with the volume ratio of 10%;
(5) The thickness of the boron carbide film is determined according to the coating speed multiplied by the time, and the embodiment sets that the 2 angstrom speed lasts for 1 kilosecond to obtain the boron carbide film with the thickness of 200 nanometers;
(6) And standing for 20 minutes after coating is completed, cooling, releasing stress, and taking out the germanium sheet to obtain the boron carbide film with corresponding thickness.
Example 2
The embodiment provides a method for preparing a boron carbide film by evaporation, which comprises the following steps:
(1) A silicon wafer with the thickness of 2 mm and the diameter of 25 mm is wiped clean by polishing solution, acetone and alcohol, so that the surface of a lens is prevented from being stained to cause stripping;
(2) Placing boron powder with purity not less than 99.9% into a crucible of an evaporation coating machine, placing the cleaned silicon wafer into a working fixture of the evaporation coating machine, adjusting the position to be right above an opening of the crucible, vacuumizing a cavity to a pressure below 1.5 x 10 -3 Pa, and setting the heating temperature of coating to 160 ℃;
(3) And after the vacuum and the temperature reach, an electron gun is started to melt boron powder, the beam current of the electron gun is slowly increased from 0 watt to 300 watt, and the phenomenon that the film material is splashed due to the instant rising of the temperature when the power is increased too fast is avoided. Setting the evaporation rate to 3 angstroms per second after the boron powder is melted;
(4) The boron powder is evaporated, meanwhile, the ion source is started to set parameters of 0.5 ampere of neutralization current, 8sccm of neutralization gas flow, 200 volts of anode voltage and 2.4 amperes of anode current, and the ion source gas is set to be introduced with the proportion of methane of 95% and argon of 5%;
(5) The thickness of the boron carbide film is determined according to the coating speed multiplied by the time, and the embodiment sets that the 3 angstrom speed lasts for 1 kilosecond to obtain the boron carbide film with the thickness of 300 nanometers;
(6) And standing for 30 minutes after coating is completed, cooling, releasing stress, and taking out the silicon wafer to obtain the boron carbide film with corresponding thickness.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310223326.XA CN116219369B (en) | 2023-03-09 | 2023-03-09 | Method for preparing boron carbide thin film by evaporation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310223326.XA CN116219369B (en) | 2023-03-09 | 2023-03-09 | Method for preparing boron carbide thin film by evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116219369A CN116219369A (en) | 2023-06-06 |
| CN116219369B true CN116219369B (en) | 2024-12-20 |
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| Country | Link |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001106585A (en) * | 1999-08-03 | 2001-04-17 | Ion Engineering Research Institute Corp | Treating method for improving resistance to oxidation at high temperature of carbon material |
| KR20030074223A (en) * | 2002-03-06 | 2003-09-19 | 주식회사 샘텍 | Parts having wear resistance coated with boron carbide layer and manufacturing method by sputtering thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003095591A1 (en) * | 2002-05-08 | 2003-11-20 | Dana Corporation | Plasma-assisted doping |
| CN105543803B (en) * | 2015-12-16 | 2018-08-31 | 中国科学院深圳先进技术研究院 | A kind of the diamond/carbon boron composite coating and preparation method of cemented carbide substrate |
| CN114481030B (en) * | 2022-01-26 | 2024-06-21 | 苏州闻道电子科技有限公司 | Solid neutron conversion layer and preparation method and application thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001106585A (en) * | 1999-08-03 | 2001-04-17 | Ion Engineering Research Institute Corp | Treating method for improving resistance to oxidation at high temperature of carbon material |
| KR20030074223A (en) * | 2002-03-06 | 2003-09-19 | 주식회사 샘텍 | Parts having wear resistance coated with boron carbide layer and manufacturing method by sputtering thereof |
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