CN116207985B - Voltage domain conversion circuit and electronic equipment - Google Patents

Abstract

The invention discloses that the invention provides a voltage domain conversion circuit and electronic equipment, capable of single-end input and single power supply; reduces the layout area, reduces the complexity of its application environment, and has no current backflow phenomenon, the voltage The domain conversion circuit includes a first field effect transistor, a second field effect transistor, a third field effect transistor, a fourth field effect transistor and an output terminal; the sources of the first field effect transistor and the second field effect transistor are respectively connected to the first power supply voltage, the drain of the first field effect transistor is connected to the gate of the second field effect transistor, the gate of the first field effect transistor is connected to the drain of the second field effect transistor; the source of the third field effect transistor is connected to the gate of the second field effect transistor The gates of the four field effect transistors are respectively connected to the second power supply voltage, the drain of the third field effect transistor is connected to the drain of the first field effect transistor, and the gate of the third field effect transistor is respectively connected to the drain of the second field effect transistor. The electrode is connected to the drain of the fourth field effect transistor, and the gate of the fourth field effect transistor is grounded.

Description

A voltage domain conversion circuit and electronic equipment

technical field

The invention belongs to the technical field of power electronics, and in particular relates to a voltage domain conversion circuit and electronic equipment.

Background technique

With the development of the Internet and the emergence of electronic products, people's life and work are more convenient. Semiconductor chip is one of the indispensable cores of various electronic products, and is a high-tech technology in today's international technology field. As the most important member of the semiconductor chip, the voltage domain conversion (level shift) circuit can transfer the voltage of the circuit from a low voltage domain to a high voltage domain or from a high voltage domain to a low voltage domain in various chip systems. To adapt to circuits in different voltage domains.

For example, in a multi-voltage domain application environment, in order to save area and power consumption, digital modules usually choose low-voltage transistors and small-sized devices, such as core transistors, and the voltage domain is 0.9V; while analog circuits choose IO transistors with stable performance, and the voltage domain It is 1.8V; the analog circuit requires digital signal enabling, calibration and SPI signal writing, therefore, the digital signal must be converted from the 0.9V voltage domain to the 1.8V voltage domain through voltage domain conversion, otherwise the signal cannot reach the threshold of the high-voltage device and appear Errors lead to functional failure; in short, voltage domain conversion is an indispensable circuit module in various circuits, and it has a wide range of application environments.

However, the traditional voltage domain conversion has the following disadvantages:

1. Two input signals with opposite phases waste the layout area and increase the complexity of the leads;

2. Two power supplies, low-voltage power supply and high-voltage power supply, also waste the layout area and increase the complexity of the leads;

3. There is a risk of backflow current from the high-voltage power supply to the low-voltage power supply.

Contents of the invention

The application provides a voltage domain conversion circuit and electronic equipment capable of single-end input and single-power supply; the layout area is reduced, the complexity of its application environment is reduced, and there is no current backfeeding phenomenon.

The present invention realizes through following technical scheme:

In one aspect, the present invention provides a voltage domain conversion circuit, including a first field effect transistor, a second field effect transistor, a third field effect transistor, a fourth field effect transistor and an output terminal; the first field effect transistor and the second field effect transistor The sources of the effect transistors are respectively connected to the first power supply voltage, the drains of the first field effect transistors are connected to the gates of the second field effect transistors, and the gates of the first field effect transistors are connected to the drains of the second field effect transistors; The source of the third field effect transistor and the gate of the fourth field effect transistor are respectively connected to the second power supply voltage, the drain of the third field effect transistor is connected to the drain of the first field effect transistor, and the gate of the third field effect transistor The electrodes are respectively connected to the drain of the second field effect transistor and the drain of the fourth field effect transistor, and the source of the fourth field effect transistor is grounded; the output terminals are respectively connected to the drain of the second field effect transistor and the third field effect transistor The gate and the drain of the fourth field effect transistor are connected.

In some of the embodiments, the voltage domain conversion circuit further includes an analog processing module, and the analog processing module includes a fifth field effect transistor (PM1), a sixth field effect transistor (PM2), a seventh field effect transistor (NM1) and The eighth FET (NM1); the sources of the fifth FET and the sixth FET are respectively connected to the first power supply voltage; the drain of the fifth FET is connected to the drain of the seventh FET, and the fifth The gate of the field effect transistor is connected to the gate of the seventh field effect transistor; the drain of the sixth field effect transistor is connected to the drain of the eighth field effect transistor; the gate of the first field effect transistor is connected to the eighth field effect transistor The gate connection of the seventh field effect transistor and the eighth field effect transistor are respectively grounded; the analog quantity processing module includes a first connection point and a second connection point, and the first connection point is respectively connected to the drain of the first field effect transistor The electrode is connected to the drain of the third field effect transistor, and the second connection point is respectively connected to the drain of the second field effect transistor, the drain of the fourth field effect transistor and the output terminal.

In some of these embodiments, the first connection point is respectively connected to the drain of the fifth field effect transistor, the drain of the seventh field effect transistor, the gate of the sixth field effect transistor, and the gate of the eighth field effect transistor; The second connection point is respectively connected to the drain of the sixth field effect transistor, the drain of the eighth field effect transistor, the gate of the fifth field effect transistor and the gate of the seventh field effect transistor.

In some of these embodiments, the voltage domain conversion circuit includes a digital signal isolation module, and the digital signal isolation module includes an inverter and a second power supply voltage, and the inverter is respectively connected to the second power supply voltage and ground; the inverter is connected to the third power supply voltage respectively. The source of the field effect transistor is connected to the gate of the fourth field effect transistor.

In another aspect, the present invention provides an electronic device with multiple voltage domains, including the voltage domain conversion circuit in any one of the above embodiments.

Compared with the prior art, the present invention has the following advantages and beneficial effects:

The voltage domain conversion circuit provided by this application can be single-ended input and single-power supply; the layout area is reduced, the complexity in the application environment is reduced, and there is no current backflow phenomenon; the voltage value of the working low-voltage domain and the high The voltage value of the voltage domain can be selected relatively independently, and at the same time, the difference between the high voltage and the low voltage of the high voltage domain after conversion can be changed according to the selected current value and resistance value.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be viewed The scope is limited, and those skilled in the art can also obtain other related drawings based on these drawings without creative work.

FIG. 1 is a schematic structural diagram of a currently used voltage domain conversion circuit provided by an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a new voltage domain conversion circuit provided by an embodiment of the present invention.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", " The orientation or positional relationship indicated by "outside" and so on is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that is usually placed when the product of the invention is used. It is only for the convenience of describing the present invention and simplifying the description, rather than Nothing indicating or implying that a referenced device or element must have a particular orientation, be constructed, and operate in a particular orientation should therefore not be construed as limiting the invention.

In addition, terms such as "horizontal" and "vertical" in the description of the present invention do not mean that the components are required to be absolutely horizontal or hang, but may be slightly inclined. For example, "horizontal" only means that its direction is more horizontal than "vertical", and it does not mean that the structure must be completely horizontal, but can be slightly inclined.

In the description of the present invention, it also needs to be explained that, unless otherwise clearly stipulated and limited, if the terms "setting", "installation", "connection" and "connection" appear, they should be understood in a broad sense, for example, it can be a fixed The connection can also be a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

The terms "comprising" and "having" and any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or modules is not limited to the listed steps or modules, but optionally also includes steps or modules that are not listed, or optionally includes For other steps or modules inherent in these processes, methods, products or devices.

This application mainly provides two kinds of voltage domain conversion circuits to realize the voltage domain conversion circuits to be protected in this application, and compare the effect with the currently used voltage domain conversion circuits. In order to distinguish them, the two voltage domain conversion circuits are introduced respectively. , the components used in each voltage domain have the same name, but each only corresponds to one voltage domain conversion circuit. It should be noted that the above two voltage domain conversion circuits are both used by the applicant.

The currently used voltage domain conversion circuit, as shown in Figure 1, includes the first field effect transistor (M1), the second field effect transistor (M2), the third field effect transistor (M3), the fourth field effect transistor (M4 ) and output (vout), the first FET and the second FET are Pmos tubes, the third FET and the fourth FET are Nmos tubes, the first FET and the second FET are The sources are respectively connected to the first power supply voltage (VDD1P8), the gate of the first field effect transistor is connected to the drain of the second field effect transistor, and the gate of the second field effect transistor is connected to the drain of the first field effect transistor; The drain of the first field effect transistor is also connected with the drain of the third field effect transistor, and the drain of the second field effect transistor is also connected with the drain of the fourth field effect transistor; The gates of the four field effect transistors are respectively connected to a digital signal isolation module (dig module), the source of the third field effect transistor and the source of the fourth field effect transistor are respectively grounded; the output terminals are respectively connected to the gate of the first field effect transistor pole, the drain of the second field effect transistor, and the drain of the fourth field effect transistor are connected. Wherein, the digital signal isolation module includes a second power supply voltage (VDD0P9) and an inverter. For the voltage domain conversion circuit corresponding to Figure 1, if the inverter is in the digital signal isolation module, it will input two low-voltage domain signals with opposite phases. If the inverter is in the analog quantity processing module (Analog module), then The analog quantity processing module has two power supply voltages, namely VDD0P9 and VDD1P8.

At present, other voltage domain conversion circuits need two signals with opposite phases as input signals. The voltage domain of this signal is a low voltage domain, such as 0.9V; if N voltage domain conversion circuits are used in the circuit, 2N voltage domain conversion circuits must be connected. Input leads waste the layout area and increase the complexity of the leads. If the low-voltage domain inverter is placed in the voltage domain conversion circuit, the number of input leads of the voltage domain conversion circuit is reduced by half, but it introduces a low-voltage power supply, which makes the voltage domain conversion circuit a dual-supply voltage power supply circuit, which will also increase Layout area and complexity of power supply

The other is the voltage domain conversion circuit to be protected by this application, as shown in Figure 2, including a first field effect transistor (M1), a second field effect transistor (M2), a third field effect transistor (M3), and a second field effect transistor (M3). Four field effect transistors (M4) and the output terminal (vout); the sources of the first field effect transistor and the second field effect transistor are respectively connected to the first power supply voltage (VDD1P8), and the drain of the first field effect transistor is connected to the second field effect transistor The gate of the effect transistor is connected, the gate of the first field effect transistor is connected to the drain of the second field effect transistor; the source of the third field effect transistor and the gate of the fourth field effect transistor are respectively connected to the second power supply voltage ( vin), the drain of the third FET is connected to the drain of the first FET, and the gate of the third FET is connected to the drain of the second FET and the drain of the fourth FET respectively , the source of the fourth field effect transistor is grounded; the output terminal is respectively connected to the gate of the first field effect transistor, the drain of the second field effect transistor, the gate of the third field effect transistor and the drain of the fourth field effect transistor connect.

Further, the voltage domain conversion circuit also includes an analog processing module, and the analog processing module includes a fifth field effect transistor (PM1), a sixth field effect transistor (PM2), a seventh field effect transistor (NM1) and an eighth field effect transistor tube (NM2); the fifth field effect tube and the sixth field effect tube are pmos tubes, the seventh field effect tube and the eighth field effect tube are nmos tubes. The sources of the fifth field effect transistor and the sixth field effect transistor are respectively connected to the first power supply voltage; the drain of the fifth field effect transistor is connected to the drain of the seventh field effect transistor, and the gate of the fifth field effect transistor is connected to the seventh field effect transistor. The gate of the field effect transistor is connected; the drain of the sixth field effect transistor is connected to the drain of the eighth field effect transistor, and the gate of the sixth field effect transistor is connected to the gate of the eighth field effect transistor; the seventh field effect The sources of the transistor and the eighth field effect transistor are respectively grounded; the analog quantity processing module includes a first connection point and a second connection point, and the first connection point is respectively connected to the drain of the first field effect transistor and the gate of the second field effect transistor. The electrode is connected to the drain of the third field effect transistor, and the second connection point is respectively connected to the gate of the first field effect transistor, the drain of the second field effect transistor, the drain of the fourth field effect transistor and the output terminal.

Further, the first connection point is respectively connected to the drain of the fifth field effect transistor, the drain of the seventh field effect transistor, the gate of the sixth field effect transistor and the gate of the eighth field effect transistor; the second connection point They are respectively connected to the gate of the fifth field effect transistor, the drain of the sixth field effect transistor, the drain of the eighth field effect transistor and the gate of the seventh field effect transistor.

Further, the voltage domain conversion circuit includes a digital signal isolation module (DIG module), the digital signal isolation module includes an inverter and a second power supply voltage, and the inverter is respectively connected to the second power supply voltage and ground; the inverter is connected to the third power supply voltage respectively. The source of the field effect transistor is connected to the gate of the fourth field effect transistor.

In the voltage domain conversion circuit to be protected in this application, single-ended input and single power supply are used to reduce the complexity in the application environment; in addition, the voltage domain conversion circuit to be protected in this application also avoids the Leakage phenomenon generated; as shown in Figure 2, the structure of the voltage domain conversion circuit to be protected in this application is input by the digital signal isolation module (DIG module) to the low-voltage signal vin, single-ended input, and in the analog quantity processing module (Analog module) There is only VDD1P8 power supply voltage; since the first FET and the third FET will not be turned on at the same time, there is no current path from the first power supply voltage VDD1P8 to the second power supply voltage VDD0P9, and there is no current backflow into the second power supply voltage In the case of VDD0P9, power consumption is saved.

The working principle of the voltage domain conversion circuit to be protected by this application: as shown in Figure 2, the low voltage domain signal vin input by the digital signal isolation module circuit (DIG) enters the voltage domain conversion circuit; when vin=0.9V, the first The four field effect transistors are turned on, Vb=0; the first field effect transistor is turned on, the third field effect transistor is turned off, Va=1.8V, and then the second field effect transistor is turned off; the final output Vout=GND. When vin=0, the fourth field effect tube is cut off, because the seventh field effect tube is stronger than the fifth field effect tube, and the sixth field effect tube is stronger than the eighth field effect tube; so the sixth field effect tube and the seventh field effect tube The FET is turned on first; at this time Va=0, Vb=1.8V, the second FET and the third FET are turned on, and the first FET is turned off; the final output Vout=VDD1P8

On the other hand, the present application provides an electronic device with multiple voltage domains, including the voltage domain conversion circuit shown in FIG. 1 in the above embodiment.

The present application also provides an electronic device with multiple voltage domains, including the voltage domain conversion circuit shown in FIG. 2 in the above embodiment.

The above is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Any simple modification or equivalent change made to the above embodiments according to the technical essence of the present invention falls within the scope of the present invention. within the scope of protection.

Claims (5)

1. The voltage domain switching circuit is characterized by comprising a first field effect transistor, a second field effect transistor, a third field effect transistor, a fourth field effect transistor and an output end; the source electrodes of the first field effect tube and the second field effect tube are respectively connected with a first power supply voltage, the drain electrode of the first field effect tube is connected with the grid electrode of the second field effect tube, and the grid electrode of the first field effect tube is connected with the drain electrode of the second field effect tube; the source electrode of the third field effect tube and the grid electrode of the fourth field effect tube are respectively connected with a second power supply voltage, the drain electrode of the third field effect tube is connected with the drain electrode of the first field effect tube, the grid electrode of the third field effect tube is respectively connected with the drain electrode of the second field effect tube and the drain electrode of the fourth field effect tube, and the source electrode of the fourth field effect tube is grounded; the output end is respectively connected with the drain electrode of the second field effect tube, the grid electrode of the third field effect tube and the drain electrode of the fourth field effect tube.

2. The voltage domain switching circuit of claim 1 further comprising an analog processing module comprising a fifth field effect transistor, a sixth field effect transistor, a seventh field effect transistor, and an eighth field effect transistor; the sources of the fifth field effect transistor and the sixth field effect transistor are respectively connected with a first power supply voltage; the drain electrode of the fifth field effect transistor is connected with the drain electrode of the seventh field effect transistor, and the grid electrode of the fifth field effect transistor is connected with the grid electrode of the seventh field effect transistor; the drain electrode of the sixth field effect transistor is connected with the drain electrode of the eighth field effect transistor, and the grid electrode of the first field effect transistor is connected with the grid electrode of the eighth field effect transistor; the sources of the seventh field effect transistor and the eighth field effect transistor are respectively grounded; the analog quantity processing module comprises a first connection point and a second connection point, wherein the first connection point is respectively connected with the drain electrode of the first field effect tube and the drain electrode of the third field effect tube, and the second connection point is respectively connected with the drain electrode of the second field effect tube, the drain electrode of the fourth field effect tube and the output end.

3. The voltage domain switching circuit of claim 2 wherein the first connection point is connected to the drain of the fifth fet, the drain of the seventh fet, the gate of the sixth fet, and the gate of the eighth fet, respectively; the second connection point is respectively connected with the drain electrode of the sixth field effect transistor, the drain electrode of the eighth field effect transistor, the grid electrode of the fifth field effect transistor and the grid electrode of the seventh field effect transistor.

4. The voltage domain switching circuit of claim 1, wherein the voltage domain switching circuit comprises a digital signal isolation module comprising an inverter and a second supply voltage, the inverter being connected to the second supply voltage and to ground, respectively; the inverter is respectively connected with the source electrode of the third field effect transistor and the grid electrode of the fourth field effect transistor.

5. A multi-voltage domain electronic device comprising the voltage domain switching circuit of any of claims 1-4.