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CN116202663A - Nanometer film pressure sensor and preparation method and application thereof - Google Patents

Nanometer film pressure sensor and preparation method and application thereof Download PDF

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Publication number
CN116202663A
CN116202663A CN202310089392.2A CN202310089392A CN116202663A CN 116202663 A CN116202663 A CN 116202663A CN 202310089392 A CN202310089392 A CN 202310089392A CN 116202663 A CN116202663 A CN 116202663A
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layer
pressure sensor
nano
film pressure
series
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CN116202663B (en
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曾朋辉
雷卫武
徐建
范敏
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Songnuomeng Technology Co ltd
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Songnuomeng Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C22C19/05—Alloys based on nickel or cobalt based on nickel with chromium
    • C22C19/051—Alloys based on nickel or cobalt based on nickel with chromium and Mo or W
    • C22C19/055—Alloys based on nickel or cobalt based on nickel with chromium and Mo or W with the maximum Cr content being at least 20% but less than 30%
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225—Measuring circuits therefor
    • G01L1/2262—Measuring circuits therefor involving simple electrical bridges

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  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

The invention discloses a nano-film pressure sensor and a preparation method and application thereof, and relates to the technical field of sensors; the sensor includes: a steel cup diaphragm; the steel cup diaphragm is provided with a core body; the core body sequentially comprises: the device comprises a transition layer, an insulating layer, a strain resistance layer and a protective layer; the core body partition arrangement comprises an inner resistance region, an outer resistance region and a bonding pad region; the inner resistance region is composed of R1, R2, R3 and R4; r1 and R2 are connected in series to form a first bridge arm; r3 and R4 are connected in series to form a second bridge arm; the outer resistance region is composed of R5, R6, R7 and R8; r5 and R6 are connected in series to form a third bridge arm; r7 and R8 are connected in series to form a fourth bridge arm; according to the invention, the inner resistance area and the outer resistance area are arranged, the series resistance group is adopted to form a bridge arm, and the resistances in the series resistance group are utilized to compensate each other, so that the working stability of the pressure sensor is improved.

Description

Nanometer film pressure sensor and preparation method and application thereof
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a nano-film pressure sensor and a preparation method and application thereof.
Background
The steel-based sputtering film pressure sensor has the advantages of high precision, good stability, wide working temperature range, capability of measuring ultra-large range and the like, and is widely applied to multiple fields of petrochemical industry, engineering machinery, electric power and the like.
However, as the core body of the steel-based pressure sensor has a complex structure, the machining is difficult (the diameter of the core body is small, the minimum inner hole machining diameter is about 1 mm), the consistency and uniformity of the machining inside the steel cup are difficult to ensure, and particularly, the thickness uniformity of the diaphragm part of the steel cup directly influences the stress deformation, so that the sensor has poor test stability; if a nanometer sensitive film resistor is deposited on the upper surface of the steel cup, the measured pressure can form larger individual difference, the batch consistency of the product is affected, and the large-scale production is not facilitated.
Disclosure of Invention
The present invention is directed to a nano-film pressure sensor that overcomes at least one of the problems and deficiencies presented in the background art discussed above.
The invention also provides a preparation method of the nano-film pressure sensor.
The invention also provides application of the nano-film pressure sensor.
In particular, the first aspect of the present invention provides a nano-film pressure sensor,
comprising the following steps:
a steel cup diaphragm;
a core body is arranged on the steel cup diaphragm;
the core body comprises the following components in sequence:
the device comprises a transition layer, an insulating layer, a strain resistance layer and a protective layer;
the core body partition arrangement comprises an inner resistance region, an outer resistance region and a bonding pad region;
the inner resistance region consists of R1, R2, R3 and R4;
the R1 and the R2 are connected in series to form a first bridge arm;
the R3 and the R4 are connected in series to form a second bridge arm;
the outer resistance region is composed of R5, R6, R7 and R8;
r5 and R6 are connected in series to form a third bridge arm;
and R7 and R8 are connected in series to form a fourth bridge arm.
According to one of the technical schemes of the pressure sensor, the pressure sensor at least has the following beneficial effects:
in the invention, 8 resistors are used to form a bridge; and combining two of the resistors to form a bridge arm; thereby greatly reducing the stress difference caused by the non-uniformity of the processing of the diaphragm; thereby improving the consistency of the batch products.
Meanwhile, the amplification amount of the strain resistor is amplified through the combination of multiple resistors, so that the sensitivity of the sensor is improved.
Meanwhile, after the two resistors are combined to form the bridge arm, when the self-heating of the resistor is detected, the two resistors can form good thermal compensation, so that the working stability of the sensor is improved.
The invention greatly improves the anti-interference capability, long-term stability and consistency of the core body by utilizing the mutual compensation among the series resistors in a multi-resistor series combination mode; is beneficial to the mass production of the nano-film pressure sensor.
According to some embodiments of the invention, the inner resistive region and the outer resistive region are arranged in concentric circles.
According to some embodiments of the invention, the inner resistive zone is disposed at a location of maximum force-to-stretch.
According to some embodiments of the invention, the outer resistive region is disposed at a location of maximum compression under force.
According to some embodiments of the invention, the stress-stretch maximum position is obtained by ANSYS software stress analysis.
According to some embodiments of the invention, the stress compression maximum position is obtained by ANSYS software stress analysis.
According to some embodiments of the invention, the R1 and the R2 are disposed perpendicular to each other.
In the invention, R1 and R2 are mutually perpendicular, so that R1 and R2 are ensured to be in different directions; thereby reducing the influence caused by the non-uniformity of the steel cup diaphragm and improving the processing stability.
Meanwhile, due to the non-uniformity of the steel cup membrane, the thermal effect (heating uniformity) of the strain resistance layer is affected, so that the difference exists in the thermal effect received by the strain resistance layer, and the working stability of the nano-film stress sensor is poor.
By means of the arrangement perpendicular to each other, good complementation is formed by the thermal effect between R1 and R2, the thermal influence on the whole strain resistance layer is reduced, and therefore the working stability is improved.
According to some embodiments of the invention, the R2 and the R3 are disposed perpendicular to each other.
According to some embodiments of the invention, the R3 and the R4 are disposed perpendicular to each other.
According to some embodiments of the invention, the geometric centers of R1, R2, R3 and R4 are located on the same circumference.
According to some embodiments of the invention, the geometric centers of R1, R2, R3 and R4 are uniformly distributed on the same circumference.
According to some embodiments of the invention, the R1, R2, R3 and R4 are distributed in a cross shape.
According to some embodiments of the invention, the geometric centers of R5, R6, R7 and R8 are located on the same circumference.
According to some embodiments of the invention, the geometric centers of R1, R2, R3 and R4 form a first circumference.
According to some embodiments of the invention, the geometric centers of R5, R6, R7 and R8 form a second circumference.
According to some embodiments of the invention, the ratio of the radius of the first circumference to the radius of the second circumference is 1:1.2-1.8.
Too close a distance between the first circumference and the second circumference may result in a relatively close distance between the strained resistive layers, thereby forming mutual interference and reducing the sensitivity of the nano-thin film sensor.
Too far a distance between the first circumference and the second circumference may cause a resistance in the circuit to become large, thereby affecting the sensitivity of the nano-thin film sensor.
According to some embodiments of the invention, the core comprises a transition layer;
an insulating layer is arranged on the surface of the transition layer;
a strain layer is arranged on part of the surface of the insulating layer;
a protective layer is arranged on part of the surface of the insulating layer;
the surface of the rest part of the insulating layer is provided with a bonding pad;
a bonding pad is arranged on part of the surface of the strain layer;
and a protective layer is arranged on the surface of the rest part of the strain layer.
According to some embodiments of the invention, the transition layer comprises a niobium oxide layer.
According to some embodiments of the invention, the thickness of the niobium oxide layer (niobium pentoxide layer) is 100nm to 800nm.
According to some embodiments of the invention, the thickness of the niobium oxide layer (niobium pentoxide layer) is 400nm to 600nm.
Too thin a layer can result in insufficient relief of stress, thereby affecting sensor stability; too thick can lead to the increase of the thickness of the film layer in the sensor, thereby limiting the application scene of the sensor.
According to some embodiments of the invention, the strained resistive layer of the inner resistive region is a NiCrMnSi layer.
According to some embodiments of the invention, the NiCrMnSi layer comprises the following elements in percentage by mass:
65% -70% of Ni, 20% -25% of Cr, 5% -15% of Mn and 2% -5% of Si.
The use amount of each component is controlled in the above range, which is favorable for further improving the accuracy of the strain layer.
According to some embodiments of the invention, the thickness of the NiCrMnSi layer is 100nm to 500nm.
According to some embodiments of the invention, the strained resistive layer of the outer resistive region is a NiCrAlY layer.
According to some embodiments of the invention, the NiCrAlY layer comprises the following elements in mass percent:
50% -60% of Ni, 10% -15% of Cr, 25% -30% of Al and 2% -4% of Y.
According to some embodiments of the invention, the thickness of the NiCrAlY layer is 100nm to 800nm.
According to some embodiments of the invention, the thickness of the NiCrAlY layer is 500-800 nm.
According to some embodiments of the invention, the insulating layer is a silicon dioxide layer.
According to some embodiments of the invention, the thickness of the insulating layer is 2000nm to 3000nm.
According to some embodiments of the invention, the protective layer consists of an alumina layer and a silica layer.
The protective layer in the invention adopts a composite protective layer. The interface barrier between the layers is utilized to block the oxygen ion permeation channel of the single-layer protective layer, so that the oxidation resistance of the protective layer is enhanced.
According to some embodiments of the invention, the thickness of the alumina layer is 100nm to 300nm.
According to some embodiments of the invention, the thickness of the silicon dioxide layer is 200 nm-400 nm.
According to some embodiments of the invention, the pad region is provided with a pad.
According to some embodiments of the invention, the pad is a gold pad.
According to some embodiments of the invention, the thickness of the bonding pad is 500 nm-1500 nm.
The second aspect of the present invention provides a method for preparing the nano-film pressure sensor, comprising the following steps:
s1, depositing the transition layer, the insulating layer and the strain resistance layer on the steel cup membrane, and patterning the strain resistance layer; preparing a first component;
s2, depositing a protective layer on a partial area of the surface of the first component; and growing a bonding pad on a partial area of the strain resistance layer.
According to some embodiments of the invention, the deposition method is ion sputtering or magnetron sputtering.
According to some embodiments of the invention, the steel cup membrane is subjected to a grinding process.
According to some embodiments of the invention, the grinding process is mechanical polishing.
According to some embodiments of the invention, the growth method of the transition layer is magnetron sputtering or ion beam sputtering.
According to some embodiments of the invention, the niobium oxide layer is grown by magnetron sputtering or ion beam sputtering.
According to some embodiments of the invention, the insulating layer is grown by magnetron sputtering or ion beam sputtering.
According to some embodiments of the invention, the strained layer is grown by magnetron sputtering or ion beam sputtering.
According to some embodiments of the invention, the NiCrMnSi layer is grown by magnetron sputtering or ion beam sputtering.
According to some embodiments of the invention, the temperature of the substrate during sputtering of the NiCrMnSi layer is 300 ℃ to 500 ℃.
According to some embodiments of the invention, the sputtering power of the NiCrMnSi layer is 150W-250W.
According to some embodiments of the invention, the NiCrAlY layer is grown by magnetron sputtering.
According to some embodiments of the invention, the temperature of the substrate during sputtering of the NiCrAlY layer is 300 ℃ to 500 ℃.
According to some embodiments of the invention, the sputtering power of the NiCrAlY layer is 150W-250W.
The third aspect of the invention provides an application of the nano-film pressure sensor in a stress test process.
Drawings
The present invention is further described below with reference to the accompanying drawings for the convenience of understanding by those skilled in the art.
Fig. 1 is a schematic top view of the nano-film pressure sensor manufactured in example 1 of the present invention.
FIG. 2 is a schematic diagram showing the distribution structure of the resistance in the nano-film pressure sensor according to example 1 of the present invention.
Fig. 3 is a schematic diagram of a circuit bridge structure of the nano-film pressure sensor manufactured in embodiment 1 of the present invention.
FIG. 4 is a graph of the results of stress analysis of ANSYS software in accordance with an embodiment of the present invention.
Fig. 5 is a schematic cross-sectional structure of a steel cup diaphragm.
In the figure: r1, a first resistor; r2, a second resistor; r3, a third resistor; r4, a fourth resistor; r5, a fifth resistor; r6, a sixth resistor; r7, a seventh resistor; r8, eighth resistor;
v+, a first input voltage; s+, a first output voltage; v-, a second input voltage; s-, a second output voltage;
h1, a first height; h2, second height.
Detailed Description
The conception and technical effects of the present invention will be clearly and completely described in the following in conjunction with the embodiments to fully understand the objects, features and effects of the present invention; it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention.
In the description of the present invention, the descriptions of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention; in this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples; furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The specific conditions are not noted in the examples, and are carried out according to conventional conditions or conditions suggested by the manufacturer; the reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
Example 1
The embodiment is a nano-film pressure sensor, and the schematic structural diagram is shown in fig. 1-4.
In the embodiment, a steel cup diaphragm of the nano-film pressure sensor;
the steel cup diaphragm is provided with a core body;
the core body sequentially comprises:
transition layer (Nb) 2 O 5 A layer (500 nm thick)), an insulating layer (silicon dioxide layer, 2500nm thick), a strain resistance layer, and a protective layer;
the core body partition arrangement comprises an inner resistance region, an outer resistance region and a bonding pad region;
the inner resistance region consists of a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4;
the first resistor R1 and the second resistor R2 are connected in series to form a first bridge arm;
the first resistor R3 and the second resistor R4 are connected in series to form a second bridge arm;
the outer resistance region consists of a fifth resistor R5, a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8;
the fifth resistor R5 and the sixth resistor R6 are connected in series to form a third bridge arm;
the seventh resistor R7 and the eighth resistor R8 are connected in series to form a fourth leg.
In FIGS. 1-3, the difference between the first input voltage V+ and the second input voltage V-is the input voltage, and the difference between the first output voltage S+ and the second output voltage S-is the output voltage.
As shown in fig. 1-3, four internal resistances of R1, R2, R3, and R4 are distributed on a concentric circle with the greatest stretching amount of the stressed membrane, wherein R1 in the X-axis direction and R2 in the Y-axis direction are connected with each other; r3 in the X-axis direction and R4 in the Y-axis direction are connected with each other; they form the two legs of a wheatstone bridge.
Since R1 and R2 are in two completely different directions, the influence of the mechanical processing non-uniformity of the diaphragm is one big or one small, and the two directions have good mutual compensation.
Also, since R3 and R4 are in two completely different directions, the effects of the diaphragm machining non-uniformity are one-size-one, and they have a good mutual compensation.
According to the resistor arrangement, the self-heating of the resistor has good mutual compensation, the thermal influence on the product can be reduced to the minimum, and the working stability of the product is facilitated.
As shown in FIGS. 1-3, the four external resistances R5, R6, R7 and R8 are distributed on a concentric circle with the maximum compression of the stressed membrane, wherein R5 and R6 are connected with each other; r7 and R8 are connected with each other; they form the two legs of a wheatstone bridge.
In the embodiment, the maximum stretching position of the diaphragm and the maximum compression of the stressed diaphragm are determined through stress analysis of ANSYS software, as shown in fig. 4 (a cut-away view), a pressure F is applied to a steel cup pressure opening to obtain the maximum stretching position (resistors R2 and R4) and the maximum compression position (R5, R6, R7 and R8);
since R5 and R6 are in two different positions, the effects of the diaphragm machining non-uniformity compensate each other.
Since R7 and R8 are in two different positions, the effects of the diaphragm machining non-uniformity compensate each other.
In this embodiment, as shown in fig. 5 (the part of the diaphragm is enlarged), the thick part of the diaphragm (the part corresponding to the first height H1 in fig. 5) is deformed slightly under the same pressure; the thin portion of the diaphragm (the portion corresponding to the second height H2 in fig. 4) is deformed by the same pressure. The stability of the test is poor due to the difference in deformation amount.
The geometric centers of R1, R2, R3 and R4 in this embodiment form a first circumference.
The geometric centers of R5, R6, R7 and R8 in this embodiment form a second circumference.
In this embodiment, the ratio of the radius of the first circumference to the radius of the second circumference is 1:1.2.
The core in this embodiment is composed of the following layers:
Nb 2 O 5 a layer (500 nm thick), an insulating layer (silicon dioxide layer 2500nm thick);
a strain resistance layer is arranged on a surface part area of the insulating layer;
a protective layer is arranged on a surface part area of the insulating layer;
a bonding pad is arranged on the surface residual part area of the insulating layer;
the strain resistance layer is connected with the bonding pad area to realize circuit conduction;
a bonding pad (Au layer, thickness 1000 nm) is arranged on a part of the surface area of the strain resistor layer;
a protective layer is arranged on a part of the surface area of the strain resistor layer;
the protective layer is composed of an alumina layer (thickness of 200 nm) and a silicon dioxide layer (thickness of 300 nm) in sequence;
the aluminum oxide layer is in contact with the strain resistance layer.
The strain resistance layers in R1, R2, R3 and R4 are NiCrMnSi layers (the thickness is 500 nm);
the NiCrMnSi layer consists of the following elements in percentage by mass:
65% Ni, 20% Cr, 10% Mn and 5% Si.
The strain resistance layers in R5, R6, R7 and R8 are NiCrAlY layers (the thickness is 500 nm);
the NiCrAlY layer consists of the following elements in percentage by mass:
57% Ni, 10% Cr, 30% Al and 3% Y.
The preparation method of the nano-film pressure sensor in the embodiment comprises the following steps:
s1, finishing flattening treatment of the steel cup membrane by grinding and polishing.
S2, sequentially depositing Nb on the steel cup membrane processed in the step S1 by adopting a magnetron sputtering coating method 2 O 5 A layer and an insulating layer; a first component is produced.
S3, respectively depositing NiCrMnSi layers on the surface of the first component prepared in the step S2 by adopting a magnetron sputtering coating method; forming a strain resistance layer of R1-R4 by utilizing a photoetching technology to prepare a second component;
wherein the temperature of the substrate during sputtering of the NiCrMnSi layer is 450 ℃;
the sputtering power of the NiCrMnSi layer is 200W;
s4, respectively depositing NiCrAlY layers on the surface of the second component prepared in the step S3 by adopting a magnetron sputtering coating method; forming a strain resistance layer of R5-R8 by utilizing a photoetching technology to prepare a third component;
the temperature of the substrate in the sputtering process of the NiCrAlY layer is 450 ℃;
the sputtering power of the NiCrAlY layer was 200W.
S5, depositing a bonding pad on the surface of the third component manufactured in the step S4 by utilizing magnetron sputtering; a fourth module is produced.
S6, forming a protective layer pattern by utilizing a photoetching technology, and depositing the protective layer by utilizing a magnetron sputtering deposition process.
Example 2
The difference between the nano-film pressure sensor of this embodiment and embodiment 1 is that:
the NiCrMnSi layer in the embodiment consists of the following elements in percentage by mass:
65% Ni, 20% Cr, 10% Mn and 5% Si.
Example 3
The difference between the nano-film pressure sensor of this embodiment and embodiment 1 is that:
in this embodiment, the NiCrAlY layer is composed of the following elements in percentage by mass:
57% Ni, 10% Cr, 30% Al and 3% Y.
Comparative example 1
The comparative example is a nano-film pressure sensor, in this example, a steel cup diaphragm of the nano-film pressure sensor;
the steel cup diaphragm is provided with a core body;
the core body sequentially comprises:
transition layer (Nb) 2 O 5 A layer (500 nm thick)), an insulating layer (silicon dioxide layer, 2500nm thick), a strain resistance layer, and a protective layer;
the core body partition arrangement comprises an inner resistance region, an outer resistance region and a bonding pad region;
the inner resistance region is composed of a ninth resistor R9 and a tenth resistor R10;
the outer resistance region is composed of an eleventh resistor R11 and a twelfth resistor R12;
in this comparative example, each of the resistors R9, R10, R11 and R12 forms a bridge arm;
r9 and R10 are parallel to each other in this comparative example.
The core in this comparative example consisted of the following layers:
Nb 2 O 5 a layer (500 nm thick), an insulating layer (silicon dioxide layer 2500nm thick);
a strain resistance layer is arranged on a surface part area of the insulating layer;
a protective layer is arranged on a surface part area of the insulating layer;
a bonding pad is arranged on the surface residual part area of the insulating layer;
the strain resistance layer is connected with the bonding pad area to realize circuit conduction;
a bonding pad (Au layer, thickness 1000 nm) is arranged on a part of the surface area of the strain resistor layer;
a protective layer is arranged on a part of the surface area of the strain resistor layer;
the protective layer is composed of an alumina layer (thickness of 200 nm) and a silicon dioxide layer (thickness of 300 nm) in sequence;
the aluminum oxide layer is in contact with the strain resistance layer.
The strain resistance layers in R9, R10, R11 and R12 are NiCrMnSi layers (the thickness is 500 nm);
the NiCrMnSi layer consists of the following elements in percentage by mass:
65% Ni, 20% Cr, 10% Mn and 5% Si.
The preparation method of the nano-film pressure sensor in the embodiment comprises the following steps:
s1, finishing flattening treatment of the steel cup membrane by grinding and polishing.
S2, sequentially depositing Nb on the steel cup membrane processed in the step S1 by adopting a magnetron sputtering coating method 2 O 5 A layer and an insulating layer; a first component is produced.
S3, respectively depositing NiCrMnSi layers on the surface of the first component prepared in the step S2 by adopting a magnetron sputtering coating method; forming a strain resistance layer of R9-R12 by utilizing a photoetching technology to prepare a second component;
wherein the temperature of the substrate during sputtering of the NiCrMnSi layer is 450 ℃;
the sputtering power of the NiCrMnSi layer is 200W;
s4, depositing a bonding pad on the surface of the second component manufactured in the step S3 by utilizing magnetron sputtering; a third component is produced.
S6, forming a protective layer pattern by utilizing a photoetching technology, and depositing the protective layer by utilizing a magnetron sputtering deposition process.
The performance test methods of the pressure sensors prepared in examples 1 to 3 and comparative example 1 of the present invention are as follows: and (3) performing forward and reverse path 3 times of verification by taking 9 points and above according to the JJG52-2013 pressure sensor (static) standard, and calculating a result according to the standard.
The results of the performance tests of inventive examples 1-3 and comparative example 1 are shown in Table 1.
TABLE 1 Performance test results for inventive examples 1-3 and comparative example 1
Figure SMS_1
In summary, 8 resistors are used to form the bridge in the invention; and combining two of the resistors to form a bridge arm; thereby greatly reducing the stress difference caused by the non-uniformity of the processing of the diaphragm; thereby improving the consistency of the batch products; meanwhile, the amplification amount of the strain resistor is amplified through the combination of multiple resistors, so that the sensitivity of the sensor is improved; meanwhile, after the two resistors are combined to form a bridge arm, when the self-heating of the resistors is detected, the two resistors can form good thermal compensation, so that the working stability of the sensor is improved; the invention greatly improves the anti-interference capability, long-term stability and consistency of the core body by utilizing the mutual compensation among the series resistors in a multi-resistor series combination mode; is beneficial to the mass production of the nano-film pressure sensor.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present invention, and are more fully described herein with reference to the accompanying drawings, in which the principles of the present invention are shown and described, and in which the general principles of the invention are defined by the appended claims.

Claims (10)

1. A nano-film pressure sensor, comprising:
a steel cup diaphragm;
a core body is arranged on the steel cup diaphragm;
the core body comprises the following components in sequence:
the device comprises a transition layer, an insulating layer, a strain resistance layer and a protective layer;
the core body partition arrangement comprises an inner resistance region, an outer resistance region and a bonding pad region;
the inner resistance region consists of R1, R2, R3 and R4;
the R1 and the R2 are connected in series to form a first bridge arm;
the R3 and the R4 are connected in series to form a second bridge arm;
the outer resistance region is composed of R5, R6, R7 and R8;
r5 and R6 are connected in series to form a third bridge arm;
and R7 and R8 are connected in series to form a fourth bridge arm.
2. The nano-film pressure sensor of claim 1, wherein the transition layer comprises a niobium oxide layer.
3. The nano-film pressure sensor of claim 1, wherein the strained resistive layer of the inner resistive region is a NiCrMnSi layer.
4. The nano-film pressure sensor of claim 1, wherein the NiCrMnSi layer comprises the following elements in mass percent:
65% -70% of Ni, 20% -25% of Cr, 5% -15% of Mn and 2% -5% of Si.
5. The nano-film pressure sensor of claim 1, wherein the strained resistive layer of the outer resistive region is a NiCrAlY layer.
6. The nano-film pressure sensor of claim 1, wherein the NiCrAlY layer comprises the following elements in mass percent:
50% -60% of Ni, 10% -15% of Cr, 25% -30% of Al and 2% -4% of Y.
7. The nano-film pressure sensor of claim 1, wherein a pad is disposed on the pad region.
8. A method of manufacturing a nano-film pressure sensor according to any one of claims 1 to 7, comprising the steps of:
s1, depositing the transition layer, the insulating layer and the strain resistance layer on the steel cup membrane, and patterning the strain resistance layer; preparing a first component;
s2, depositing a protective layer on a partial area of the surface of the first component; and growing a bonding pad on a partial area of the strain resistance layer.
9. The method of claim 8, wherein the deposition method is ion sputtering or magnetron sputtering.
10. Use of a nano-film pressure sensor according to any one of claims 1 to 7 in a stress test procedure.
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